30th week of 2015 patent applcation highlights part 52 |
Patent application number | Title | Published |
20150206658 | METHOD OF MANUFACTURING HIGH PERMITTIVITY LOW LEAKAGE CAPACITOR AND ENERGY STORING DEVICE - A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices. | 2015-07-23 |
20150206659 | METHOD OF MANUFACTURING HIGH PERMITTIVITY LOW LEAKAGE CAPACITOR AND ENERGY STORING DEVICE - A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices. | 2015-07-23 |
20150206660 | CERAMIC CAPACITOR AND METHODS OF MANUFACTURE - A capacitor includes a pair of electrodes and a metalized dielectric layer disposed between the pair of electrodes, in which the metalized dielectric layer has a plurality of metal aggregates distributed within a dielectric material. The distribution is such that a volume fraction of metal in the metalized dielectric layer is at least about 30%. Meanwhile, the plurality of metal aggregates are separated from one another by the dielectric material. A method for forming a metal-dielectric composite may include coating a plurality of dielectric particles with a metal to form a plurality of metal-coated dielectric particles and sintering the plurality of metal-coated dielectric particles at a temperature of at least about 750° C. to about 950° C. to transform the metal coatings into discrete, separated metal aggregates. Contrary to conventional techniques of separating electrodes by a dielectric tape, this inventive system and method demonstrates that a metalized dielectric layer may be formed in-situ during sintering. | 2015-07-23 |
20150206661 | ELECTRONIC COMPONENT - An interposer includes a plurality of first connection electrodes each of which is arranged on either of first- and second-side-surface sides of a first principal surface of a substrate; a plurality of second connection electrodes each of which is arranged on either of first- and second-side-surface sides of a second principal surface of the substrate; and a plurality of third connection electrodes each of which is arranged on either of first and second side surfaces. Each of the first connection electrodes has a first portion located away from an edge of the first principal surface, and a second portion extending from the first portion to the edge and connected to the third connection electrode. Each of the second portion of each first connection electrode and the plurality of third connection electrodes has a width smaller than a width of the first portion of each first connection electrode. | 2015-07-23 |
20150206662 | METHOD FOR PRODUCING A CAPACITOR - A method for producing a capacitor stack in one portion of a substrate, the method including: forming a cavity along a thickness of the portion of the substrate from an upper face of the substrate, depositing a plurality of layers contributing to the capacitor stack onto the wall of the cavity and onto the surface of the upper face, and removing matter from the layers until the surface of the upper face is reached. The forming of the cavity includes forming at least one trench and, associated with each trench, at least one box. The at least one trench includes a trench outlet that opens into the box. The box includes a box outlet that opens at the surface of the upper face, and the box outlet being shaped to be larger than the trench outlet. | 2015-07-23 |
20150206663 | OPTO-ELECTRONIC DEVICE - The present invention relates to an opto-electronic device comprising: a first component comprising an electrode, an active layer and a first transparent conductive layer; a second component comprising a transparent electrode, and a transparent adhesive disposed between the first component and the second component, wherein the transparent electrode comprises a metal or metal alloy current collector and the transparent adhesive comprises one or more conductive components. | 2015-07-23 |
20150206664 | ELECTRICITY STORAGE DEVICE - An electricity storage device maintains low internal resistance and high electric capacity. The nonaqueous-electrolytic-solution hybrid electricity storage device employs an anode into/from which lithium can be intercalated and deintercalated and a cathode including activated carbon, even after high-temperature storage and/or high-temperature charging/discharging. Specifically, this electricity storage device includes an anode into/from which lithium can be intercalated and deintercalated, a cathode that includes activated carbon, and a nonaqueous electrolytic solution, wherein the electricity storage device employs a nonaqueous electrolytic solution that includes at least one type of compound represented by one of general formulas (1) to (5). Details on the general formulas (1) to (5) are as described in the Description. | 2015-07-23 |
20150206665 | SWITCH - A switch includes a first arm that is rotatably supported, a first contact member that is provided at a free end of the first arm, a second arm that is rotatably supported, and a second contact member that is provided at a free end of the second arm and is to come into contact with the first contact member. After the first contact member and the second contact member have come into contact with each other, a point of contact between the first contact member and the second contact member is displaced with rotational motions of the first arm and the second arm. | 2015-07-23 |
20150206666 | ELECTROMAGNETIC CONTACTOR - An electromagnetic contactor includes a fixed contact portion, a movable contact portion disposed facing the fixed contact portion to contact to and separate from the fixed contact portion, and an arc extinguishing receptacle forming an arc extinguishing chamber housing the fixed contact portion and movable contact portion. Among contact surfaces of the movable contact portion and fixed contact portion facing each other, at least an opposing distance between a contact end portion of the fixed contact portion and a contact end portion of the movable contact portion positioned in a moving direction of an arc generated when separating the movable contact portion from the fixed contact portion is set to increase with increasing proximity to end surfaces on contact end portion sides. | 2015-07-23 |
20150206667 | METHOD FOR CLOSING A SWITCH AND SWITCH FOR PERFORMING THE METHOD - An embodiment relates to a method for closing a switch and a switch for performing the method, the switch having a stationary switch contact including a stationary contact face, a movable switch contact including a movable contact face parallel to the stationary contact face and lying under pressure against the stationary contact face in the closed state, and an elastic transversal offset of the contact faces which ensures that pressure is applied when the contact surfaces lie against each other. To guarantee closing during a short-circuit, a displaceable counter-pressure element is provided which presses against the movable contact face in the open position and at least reduces the transversal offset. The counter-pressure element moves in conjunction with the movable switch contact towards the closed position when the switch closes. The counter-pressure element stops moving during the closing movement, while the movable contact face continues to move into the closed position. | 2015-07-23 |
20150206668 | LOCKOUT DEVICE AND A METHOD FOR ITS USE - A lockout device for preventing an electrical switch from being turned either ON or OFF while the lockout device is attached to the switch. The present lockout device can be capable of quick and easy attachment to the switch and can be secured to the switch with a padlock or similar locking device. The present lockout device can also comprise a peg for attaching a lockout tag, which prevents the tag from being removed while the lockout device is connected to a switch. | 2015-07-23 |
20150206669 | CONTROL DEVICE, IN PARTICULAR FOR A DOMESTIC APPLIANCE - The present invention relates to a control device, in particular for a domestic appliance. The control device comprises at least one front panel ( | 2015-07-23 |
20150206670 | ELECTRONIC COMPONENT HAVING MOVABLE CONTACT - An electronic component comprising: a case; a switching mechanism incorporated within the case; an actuator configured to actuate the switching mechanism, the actuator being mounted in the case so as to be displaceable by sliding; and a rubber cap configured to seal a sliding part of the actuator, wherein the rubber cap is made of a hydrin-based rubber. | 2015-07-23 |
20150206671 | ELECTRONIC DEVICE WITH BUTTON - An electronic device having a surface-mounted pressable button includes a shell, a pressing piece, a fixing piece, an adjusting piece, and a switch. The shell defines a receiving hole. The pressing piece is movably received in the receiving hole. The fixing piece is fixed in the electronic device and defines a first through hole facing the pressing piece. The adjusting piece is received in the first through hole and is movable along an axis of the first through hole. The switch faces the pressing piece and is fixed to the adjusting piece, and the depth of the switch within the first through hole is adjustable. | 2015-07-23 |
20150206672 | KEYBOARD, ADJUSTED KEYBOARD ACCORDING TO USER OPERATION AND CONDUCTING STRENGTH ADJUSTMENT METHOD ACCORDING TO USER OPERATION - A keyboard comprising a plurality of keys and a keyboard controller is disclosed. The keys contain a first key. The keyboard controller generates a first sensing value corresponding to the first key when the first key is pressed by a first force. The first sensing value is related to the magnitude of the first force and is compensated by a first compensation value corresponding to the first key to generate a first adjusted sensing value. If the first adjusted sensing value is higher than or equal to a current threshold, the keyboard controller determines that the first key is pressed and accordingly outputs a first key code corresponding to the first key. | 2015-07-23 |
20150206673 | THIN-TYPE KEYBOARD STRUCTURE - A thin-type keyboard structure includes a substrate, a membrane circuit board, a key assembly and a signal conversion module. The membrane circuit board is disposed on the substrate and includes a plurality of signal wires. The key assembly includes a plurality of normal keys, a plurality of specific keys and a predetermined key. The signal conversion module is disposed on membrane circuit board and electrically connected to the signal wires, wherein the predetermined key correspondingly covers the signal conversion module. | 2015-07-23 |
20150206674 | KEYBOARD AND ELECTRONIC APPARATUS - In accordance with one embodiment, a keyboard consisting of one or a plurality of keys comprises one or a plurality of key switches corresponding to the number of the keys, a cover sheet and a protection piece. The key switch includes a main body and a key top which protrudes from the main body, and is pressed into the main body for a predetermined stroke when a pressing operation is carried out and is returned to the original position when the pressing operation is released. The cover sheet covers the key switch. The protection piece is fixed on the cover sheet at a position between the key top and the cover sheet. | 2015-07-23 |
20150206675 | MULTI-FUNCTION FOOT SWITCH - Disclosed is a foot switch to be used in medical equipment for controlling various medical operations. The foot switch may comprise a foot pedal, a pressure sensor, a tilt sensor and a control unit. The pressure sensor may be adapted to sense a pressure applied on the foot pedal. The tilt sensor may be adapted to sense tilting of the foot pedal. The control unit may be configured to receive a first control signal and a second control signal from the pressure sensor and the tilt sensor respectively. The control unit may further be configured to perform a first function and a second function based upon the receipt of the first control signal and the second control respectively. The first function and the second function may be associated with controlling parameters associated with the medical equipment, thereby facilitating to control the medical operations. | 2015-07-23 |
20150206676 | SWITCH - Provided is a reliable switch having a contact surface that is prevented from being roughened. To solve the problem, there is provided a switch including a plurality of switching units | 2015-07-23 |
20150206677 | VACUUM INTERRUPTER WITH ARC-RESISTANT CENTER SHIELD - The disclosed concept pertains to alloy compositions, methods and arc-resistant shields composed of the alloy compositions. The arc-resistant shields are positioned in vacuum interrupter chambers and demonstrate resistance to arc damage and ability to hold off high voltages after arcing, while providing a lower cost alternative to traditional alloy compositions used for producing arc-resistant shields. In certain embodiments, the alloy compositions include copper and/or an element chemically compatible to copper and another component, such as but not limited to, iron, stainless steel, niobium, molybdenum, vanadium, tungsten carbide, chromium carbide, vanadium carbide and chromium, and alloys and mixtures thereof. | 2015-07-23 |
20150206678 | PNEUMATIC DETECTOR WITH INTEGRATED ELECTRICAL CONTACT - The present disclosure relates to an advanced pneumatic detector (APD) alarm switch. The present APD may comprise a deformable diaphragm configured to make contact with a contact surface. This contact surface may be integral to a surface of the insulating material within the APD. | 2015-07-23 |
20150206679 | VOLTAGE CONTROLLER FOR AN ELECTRIC FAN - A voltage controller has an casing, with a plurality of electrical connecting terminals, and housing a signal processing circuit and a power circuit, facing one another and connected to these terminals. A thermally fusible safety device is fitted between the circuits, and is electrically connected between one of the terminals and the power circuit. The safety device has a strip of resiliently deformable and electrically conductive material and a plate-like positioning and support formation. The formation has a seat which forms an opening through which a first end of the strip is connected to the power circuit. A second end of the strip is connected to one of the terminals by a thermally fusible connection. The strip is coupled to the formation with a pre-loading arranged to break the connection of its second end. | 2015-07-23 |
20150206680 | TEMPERATURE SWITCH - A temperature switch electrically interconnects a first wire and a second wire, and includes a conducting mechanism and a temperature control mechanism controlling electrical connection between the first and second wires using the conducting mechanism in a normal condition. The conducting mechanism includes a safety unit composed of a conducting resilient bracket and a deformable component abutting against the conducting resilient bracket, thereby enabling the conducting resilient bracket to electrically interconnect the first and second wires. The deformable component is deformed upon reaching a specific temperature, such that interconnection between the first and second wires made via the conducting resilient bracket is broken. | 2015-07-23 |
20150206681 | ELECTRICAL SWITCH FORMING A FAST ACTUATION CIRCUIT BREAKER - A normally closed electric switch having a sliding assembly that is actuated to open the switch, e.g. by a pyrotechnic gas generator. Prior to actuation, a conductive portion of the sliding assembly ( | 2015-07-23 |
20150206682 | System and Method to Reduce Power Consumption in a Multi-Sensor Environment - Various embodiments of the invention provide for fully-integrated, low-latency power reduction in multi-sensor systems. In certain embodiments, power consumption is minimized by modulating power and mode of operation of gyroscopes, magnetometers, and accelerometers under certain conditions. Certain embodiments provide for reduction of power consumption by the use of emulated gyroscope data. | 2015-07-23 |
20150206683 | SWITCHGEAR - Provided is a switchgear which is capable of easily accomplishing an interruption task required in a high-voltage-purpose switchgear and which is short in the interruption time. The switchgear includes a pressure container | 2015-07-23 |
20150206684 | ELECTROMAGNETIC CONTACTOR - An electromagnetic contactor includes a contact mechanism having a pair of fixed contacts disposed to maintain a predetermined interval in a longitudinal direction, and a movable contact disposed above the pair of fixed contacts, the movable contact contacting to and detaching from the pair of fixed contacts. Each of the pair of fixed contacts has a fixed contact portion, the movable contact extends in a longitudinal direction thereof and has a pair of movable contact portions contacting the pair of fixed contacts, and the movable contact is disposed so as to move in a vertical direction thereof on a connecting shaft fixed to a movable plunger and is pressed down by a biasing force of a contact spring in a downward direction thereof on a central portion of the movable contact in the longitudinal direction, the movable contact being held on the connecting shaft. | 2015-07-23 |
20150206685 | ELECTROMAGNETIC CONTACTOR - An electromagnetic contactor includes a pair of fixed contact portions having a predetermined distance from each other; a movable contact including a pair of movable contact portions disposed facing the pair of fixed contact portions; a movable support body supporting a central portion of the movable contact in an extending direction of the movable contact; a housing receptacle formed from a non-conductive body, housing at least the pair of fixed contact portions and the movable contact; an electromagnet unit causing the movable support body to move back and forth to cause the movable contact portions to contact to and separate from the fixed contact portions; and sliding guides extending along a moving direction of the movable contact for moving the movable contact back and forth in the housing receptacle to regulate a turning displacement of the movable contact. The sliding guides are different from the housing receptacle. | 2015-07-23 |
20150206686 | MICROELECTROMECHANICAL SWITCHES FOR STEERING OF RF SIGNALS - A switch includes a shuttle having an elongated length resiliently supported at opposing ends thereof and configured to move along a motion axis in response to an applied voltage. A shuttle switch portion includes a plurality of shuttle contact fingers extending transversely from opposing sides of the shuttle. A common contact at a common terminal side of the shuttle includes a plurality of contact fingers respectively interdigitated with the shuttle contact fingers. First and second terminal contacts are adjacent a switched terminal side of the shuttle, and include first terminal contact fingers and second terminal contact fingers respectively interdigitated with shuttle contact fingers. The shuttle switch portion is configured to selectively connect the common contact to the first terminal contact or the second terminal contact. | 2015-07-23 |
20150206687 | Temperature switch and method for adjusting a temperature switch - The invention relates to a temperature switch comprising a housing ( | 2015-07-23 |
20150206688 | THERMAL TRIP DEVICE, SWITCHING DEVICE, THERMAL MAGNETIC CIRCUIT BREAKER AND METHOD FOR PROTECTING AN ELECTRIC CIRCUIT - A thermal trip device, of a thermal magnet circuit breaker is disclosed for protecting an electrical circuit from damage by overload, a switching device and a thermal magnetic circuit breaker including at least the thermal trip device are disclosed. In at least one embodiment, the thermal trip device includes at least a bimetal element arranged with a first end at a current conductive element to conduct electrical current and arranged with a second end at a tripping slide adapted to interrupting a current flow. The at least a bimetal element is connectable with a linking element extending between the bimetal element and the current conductive element to redirect the electrical current at least partially. Furthermore, a method is disclosed for protecting an electric circuit from damage by overload by use of the thermal trip device of a thermal magnet circuit breaker. | 2015-07-23 |
20150206689 | ELECTRON EMISSION SOURCE - An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons. | 2015-07-23 |
20150206690 | SYSTEM AND METHOD FOR GENERATING IONS IN AN ION SOURCE - Embodiments of a method for generating ions in an ion source are provided. The method for generating ions in an ion source includes introducing a dopant gas and a diluent gas into an ion source arc chamber. The method for generating ions in an ion source further includes generating plasma in the ion source arc chamber based on the dopant gas and the diluent gas. In addition, the dopant gas includes carbon monoxide, and the diluent gas includes xenon and hydrogen | 2015-07-23 |
20150206691 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of second electrodes intersected with a number of first electrodes to define a number of intersections. The first electrode includes a carbon nanotube layer and a semiconductor layer coated on the carbon nanotube layer. An insulating layer is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the semiconductor layer is sandwiched between the insulating layer and the carbon nanotube layer. | 2015-07-23 |
20150206692 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes. | 2015-07-23 |
20150206693 | ELECTRON EMISSION SOURCE - An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein the semiconductor layer defines a number of holes, the first electrode comprises a carbon nanotube layer, and a portion of the carbon nanotube layer corresponding to the number of holes is suspended on the number of holes. | 2015-07-23 |
20150206694 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure having a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer, the first electrodes in the number of electron emission units are spaced apart from each other, and the second electrodes in the number of electron emission units are spaced apart from each other. | 2015-07-23 |
20150206695 | ELECTRON EMISSION SOURCE AND METHOD FOR MAKING THE SAME - An electron emission source includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure comprising a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer. A method for making the electron emission source is also related. | 2015-07-23 |
20150206696 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of second electrodes intersected with a number of first electrodes to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer, an electron collection layer, and an insulating layer stacked together, and the electron collection layer is a conductive layer. | 2015-07-23 |
20150206697 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an electron collection layer, an insulating layer, and a second electrode stacked with each other, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer. | 2015-07-23 |
20150206698 | Image Capture Device - An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode. | 2015-07-23 |
20150206699 | ELECTRON EMISSION DEVICE AND ELECTRON EMISSION DISPLAY - An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes. | 2015-07-23 |
20150206700 | ION IMPLANTATION DEVICE - An ion implantation device equipped with a vacuum chamber ( | 2015-07-23 |
20150206701 | TWO-DIMENSIONAL MASS RESOLVING SLIT MECHANISM FOR SEMICONDUCTOR PROCESSING SYSTEMS - An adjustable mass-resolving slit assembly includes an aperture portion and an actuation portion. The aperture portion includes first and second shield members that define an aperture therebetween for receiving an ion beam during semiconductor processing operations. The actuation portion is coupled to the aperture portion and selectively and independently adjusts the position of the first and second shield members along first and second non-parallel axes. Adjusting the position of the first and second shield members along the first axis adjusts a width of the aperture. Adjusting the position of the first and second shield members along the second axis adjusts a region of the first and second shield members impinged by the ion beam. Methods for using the adjustable mass-resolving slit assembly are also disclosed. | 2015-07-23 |
20150206702 | CHARGED PARTICLE BEAM DEVICE, CONTROL METHOD FOR CHARGED PARTICLE BEAM DEVICE, AND CROSS-SECTION PROCESSING OBSERVATION APPARATUS - A cross-section processing observation apparatus includes an ion beam control unit for controlling a charged particle beam generation-focusing portion and a deflector and including a DAC which converts an input digital signal into an analog signal which is to be input to the deflector, and a field-of-view setting portion for setting a value of a field of view of a charged particle beam where the scanning performed by the deflector is performed on the basis of a set value of a slice amount. | 2015-07-23 |
20150206703 | Sample Introduction Device and Charged Particle Beam Instrument - A sample introduction device ( | 2015-07-23 |
20150206704 | Stage Apparatus and Sample Observation Apparatus - In order to provide a stage apparatus with high speed stability in addition to being able to achieve positioning with a high degree of accuracy, and a sample observation apparatus, such as an optical microscope and a scanning electron microscope, including the stage apparatus, the stage apparatus and the sample observation apparatus of the present invention correct a command voltage value of standard waveform data or an output timing of a command voltage value such that a difference between a first time history response and a second time history response is reduced to zero, the first time history response for displacement or speed when the stage mechanism is driven with use of the standard waveform data showing the command voltage value at each predetermined time and the second time history response for displacement or speed when a speed of the stage mechanism is constant, to be set as drive waveform data to be outputted to a drive unit of the stage mechanism. | 2015-07-23 |
20150206705 | MEMBER FOR CHARGED PARTICLE BEAM DEVICE, CHARGED PARTICLE BEAM DEVICE AND DIAPHRAGM MEMBER - A member for a charged particle beam device ( | 2015-07-23 |
20150206706 | CHARGED PARTICLE BEAM APPARATUS AND SAMPLE OBSERVATION METHOD - A charged particle beam apparatus includes an electron beam column and an FIB column, in which an irradiation axis of the electron beam column and an irradiation axis of the FIB column are disposed to be perpendicular or substantially perpendicular to each other on a sample without interference. In addition, the first sample stage and a second sample stage are independently provided and moved to be tilted centering on an axial direction. The sample is moved by the first sample stage and a sample piece which is cut off from the sample is moved to be fixed to a tip end of a probe which is rotatable centering on the axial direction, thereby manufacturing the sample piece which reduces the influence of a curtaining effect. | 2015-07-23 |
20150206707 | Method for S/TEM Sample Analysis - An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. Preferred embodiments of the present invention also provide an in-line process for S/TEM based metrology on objects such as integrated circuits or other structures fabricated on semiconductor wafer by providing methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis. | 2015-07-23 |
20150206708 | CHARGED PARTICLE BEAM APPARATUS AND PROCESSING METHOD - A charged particle beam apparatus is provided with: a charged particle beam column configured to irradiate a charged particle beam; and a controller configured to control the charged particle beam column to irradiate the charged particle beam at a first pixel interval for a first region and to irradiate the charged particle beam at a second pixel interval different from the first pixel interval for a second region included in the first region. | 2015-07-23 |
20150206709 | MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND MULTI CHARGED PARTICLE BEAM WRITING METHOD - A multi charged particle beam writing apparatus includes a charge amount distribution calculation unit to calculate a charge amount distribution whose charge amount charged by perpendicular incidence of a representative beam of multiple beams in a writing region of a target object, a position correction unit to calculate, using the charge amount distribution, a corrected position of an irradiation position of each beam where a positional deviation amount including a positional deviation amount of an irradiation position due to a charge amount, dependent on the irradiation position of each beam of the multiple beams has been corrected, and a writing unit to write a pattern on the target object by controlling an irradiation amount of each beam such that a formation position of an irradiation pattern of each beam of the multiple beams is to be a corresponding corrected position. | 2015-07-23 |
20150206710 | ION IMPLANTATION DEVICE - The disclosed ion implantation apparatus has a vacuum chamber | 2015-07-23 |
20150206711 | APPARATUS FOR GENERATING AND MAINTAINING PLASMA FOR PLASMA PROCESSING - An apparatus for generating and maintaining plasma for plasma processing using inductively coupled RF power. The apparatus includes a resonant circuit having a resonant capacitance and a resonant inductance, an excitation circuit for exciting the resonant circuit, and a coupling dement for coupling RF power from the inductance into a plasma chamber. | 2015-07-23 |
20150206712 | ANTENNA AND PLASMA PROCESSING APPARATUS - An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other. | 2015-07-23 |
20150206713 | PLASMA PROCESSING APPARATUS - Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel. | 2015-07-23 |
20150206714 | REACTIVE SPUTTERING APPARATUS - A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering. | 2015-07-23 |
20150206715 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times. | 2015-07-23 |
20150206716 | PLASMA GENERATING APPARATUS - A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times. | 2015-07-23 |
20150206717 | Tuning A Parameter Associated With Plasma Impedance - Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value. | 2015-07-23 |
20150206718 | DEVICE AND PROCESS FOR PREVENTING SUBSTRATE DAMAGES IN A DBD PLASMA INSTALLATION - The present invention relates to a process for preventing substrate damages in an installation for surface treatment by dielectric barrier discharge (DBD) and a surface treatment DBD installation for carrying out such process. It comprises:—detecting the amplitude of the voltage at the terminals of the electrodes and the amplitude of the current circulating between said electrodes;—defining the maximum number of alternations of voltage at the terminals of the electrodes in the presence of a hot electric arc (n max) in order not to exceed 50 Joules as dissipated energy in said substrate;—when a hot electric arc appears between said electrodes, modifying with inverse feedback the voltage at the terminals of said electrodes before the defined maximum number of alternations of voltage at the terminals of the electrodes is reached. | 2015-07-23 |
20150206719 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 2015-07-23 |
20150206720 | BOWL SHAPED METAL NANOSTRUTURE ARRAY - A bowl shaped metal nanostructure array includes a substrate having a surface and a number of particle-in-bowl structures located on the surface of the substrate. Each particle-in-bowl structures includes a bowl shaped concave structure and a protruding member protruding from the bowl shaped concave structure. The protruding member is integrated with the bowl shaped concave structure. | 2015-07-23 |
20150206721 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate disposed in a process chamber includes performing a process on a substrate disposed in a process chamber having a substrate support ring configured to support the substrate and a reflector plate disposed proximate a back side of the substrate; providing a first gas comprising one of an oxygen containing gas or a nitrogen containing gas to a back side of the substrate via one or more through holes disposed in the reflector plate while performing the process on the substrate; and maintaining the process chamber at a first pressure proximate a top surface of the substrate and at a second pressure proximate the bottom surface of the substrate, wherein the first pressure is greater than the second pressure sufficiently to prevent dislodgement of the substrate from the substrate support ring during processing. | 2015-07-23 |
20150206722 | LOWER ELECTRODE AND PLASMA PROCESSING APPARATUS - A lower electrode | 2015-07-23 |
20150206723 | SUPPORT UNIT AND APPARATUS FOR TREATING SUBSTRATE - Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate. | 2015-07-23 |
20150206724 | Systems and Methods for Integrated Resputtering in a Physical Vapor Deposition Chamber - The present disclosure is directed to a material layer deposition system. The material layer deposition system includes a wafer pedestal configured to support at least one wafer within a confinement shield structure and a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure. The target carrier structure is configured to support a sputtering target. The material layer deposition system further includes a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure, an electrical power source coupled to the collimator to supply electrical power, and a control system configured to control the electrical power source coupled to the collimator. | 2015-07-23 |
20150206725 | Thermionic Converter - Thermionic converter with a linear arrangement of the components, suitable for the direct conversion of solar energy into electrical energy and the combined generation of heat and energy, including an elongated vacuum tube which houses a cathode and at least one anode, the cathode and the at least one anode being arranged longitudinally alongside each other along the vacuum tube, wherein the cathode is suspended centrally inside the vacuum tube at at least one end which forms a corresponding current output of the cathode, wherein the cathode is a cathode in the form of a spiral. | 2015-07-23 |
20150206726 | METHOD AND SYSTEM FOR THE QUANTITATIVE CHEMICAL SPECIATION OF HEAVY METALS AND OTHER TOXIC POLLUTANTS - This invention relates to systems and methods for measuring quantitatively multiple species or heavy metals, including mercury, and other toxic pollutants. More specifically, the systems and methods of the invention allows for determination of the analytes even at very low concentration, through concentration on a collection interface, desorption and analysis by mass spectrometry. The invention also provides for a portable device or kit for modifying an existing mass spectrometer. | 2015-07-23 |
20150206727 | Method and apparatus for underdetermined blind separation of correlated pure components from nonlinear mixture mass spectra - The present invention relates to a computer-implemented method and apparatus for data processing for the purpose of blind separation of nonnegative correlated pure components from smaller number of nonlinear mixtures of mass spectra. More specific, the invention relates to preprocessing of recorded matrix of mixtures spectra by robust principal component analysis, trimmed thresholding, hard thresholding and soft thresholding; empirical kernel map-based nonlinear mappings of preprocessed matrix of mixtures mass spectra into reproducible kernel Hilbert space and linear sparseness and nonnegativity constrained factorization of mapped matrices therein. Thereby, preprocessing of recorded matrix of mixtures mass spectra is performed to suppress higher order monomials of the pure components that are induced by nonlinear mixtures. Components separated by each factorization are correlated with the ones stored in the library. Thereby, component from the library is associated with the separated component by which it has the highest correlation coefficient. Value of the correlation coefficient indicates degree of pureness of the separated component. Separated components that are not assigned to the pure components from the library can be considered as candidates for new pure components. Identified pure components can be used for identification of compounds in chemical synthesis, food quality inspection or pollution inspection, identification and characterization of compounds obtained from natural sources (microorganisms, plants and animals), or in instrumental diagnostics—determination and identification of metabolites and biomarkers present in biological fluids (urine, blood plasma, cerebrospinal fluid, saliva, amniotic fluid, bile, tears, etc.) or tissue extracts. | 2015-07-23 |
20150206728 | Mass Spectrometer and Method - A measurement state in a mass spectrometer device is determined so that the measurement method for the next round of measurement can be automatically determined. The mass spectrometer device ( | 2015-07-23 |
20150206729 | NEBULIZER AND ANALYZER - An object is to mix multiple liquids sufficiently and then nebulize the mixed liquids while maintaining the nebulizing efficiency. A nebulizer includes a first inner tube disposed inside an outer tube and having therein a first sample passage through which a first liquid sample flows, a second inner tube disposed inside the outer tube in parallel with the first inner tube and having therein a second sample passage through which a second liquid sample flows, a membranous member disposed with a gap between the membranous member and sample outlets formed at respective ends of the inner tubes. The gap forms mixing space in which a gas passing through a gas passage converts the first and second liquid samples flowing out of the sample outlets into droplets and mixes the droplets and the membranous member has multiple holes through which the mixed liquid samples pass along with the gas. | 2015-07-23 |
20150206730 | APPARATUS AND METHOD FOR THERMAL ASSISTED DESORPTION IONIZATION SYSTEMS - The present invention is directed to a method and device to desorb an analyte using heat to allow desorption of the analyte molecules, where the desorbed analyte molecules are ionized with ambient temperature ionizing species. In various embodiments of the invention a current is passed through a mesh upon which the analyte molecules are present. The current heats the mesh and results in desorption of the analyte molecules which then interact with gas phase metastable neutral molecules or atoms to form analyte ions characteristic of the analyte molecules. | 2015-07-23 |
20150206731 | ION GUIDE DEVICE AND ION GUIDE METHOD - The present invention relates to an ion guide device and an ion guiding method. The ion guide device comprises: a plurality of electrode sets distributed along a central axis longitudinally, wherein each electrode set has a ring shape and consists of at least 2 segmented electrodes (for example, | 2015-07-23 |
20150206732 | ION SOURCE, ION GUN, AND ANALYSIS INSTRUMENT - Provided are an ion source, an ion gun, and an analysis instrument, which are capable of performing sputtering without damage to a surface of a sample and improving detection sensitivity in mass spectroscopy. In the ion source, an emission opening to which ionization liquid is supplied is disposed in an electric field formed in vacuum environment by an extracting electrode so that super large droplet cluster ions are generated from the emission opening. When the sample is irradiated with a super large droplet cluster ion beam, the sample surface is subjected to sputtering without damage, so as to remove contamination substances or to expose a new surface of the sample. In mass spectroscopy, detection sensitivity is improved. | 2015-07-23 |
20150206733 | TECHNIQUES FOR PERFORMING MASS SPECTROMETRY - Techniques are described for performing mass spectrometry. A quadrupole, or more generally, an electrode-based device, performs mass filtering for selectively filtering ions. One or more components generate a first RF potential, a DC potential, and a supplemental RF potential applied to the quadrupole. The supplemental RF potential has a corresponding multiple notched waveform having a plurality of corresponding frequencies thereby allowing a plurality of ions to pass through the quadrupole at a same time. Each of the plurality of corresponding frequencies corresponds to a notch in the waveform allowing one of the plurality of ions of a different mass or m/z to pass through the quadrupole for processing by another component or device. | 2015-07-23 |
20150206734 | METHOD AND MANUFACTURING SYSTEM - A method is provided. The method includes: assigning a buffer to a first wafer lot comprising a plurality of wafers according to a first trigger event associated with an equipment; and assigning a transporter to a second wafer lot comprising a plurality of wafers according to a second trigger event associated with the equipment. | 2015-07-23 |
20150206735 | CONTROL SYSTEM AND CONTROL METHOD FOR COMPONENT MOUNTING MACHINE - A wafer component supply device supplying a wafer component and a feeder, such as a tape feeder supplying an electronic component, are set in a component mounting machine. When the wafer component is to be inverted and mounted on a circuit substrate, the wafer component supply device allows the wafer component present on an inverted supply head to be sucked by a mounting head of the component mounting machine at a position where the supply head and a stage are moved down by a vertical movement mechanism. An order of an operation for inverting the wafer component and mounting the wafer component on the circuit substrate and an operation for mounting the feeder component on the circuit substrate is set so that the supply head and the mounting head do not interfere with each other; and an operation for moving down the supply head and the stage, allowing the wafer component to be sucked by the supply head, and inverting the wafer component is performed so as to overlap with an operation for sucking and mounting the feeder component by the mounting head. | 2015-07-23 |
20150206736 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The uniformity of the thickness of the film of a film to be formed on a substrate within a plane of the substrate can be improved. A method of manufacturing a semiconductor includes performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) supplying a source gas to the substrate in a process chamber; (b) removing the source gas from the process chamber; (c) supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) purging the inside of the process chamber using an inert gas. | 2015-07-23 |
20150206737 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated. | 2015-07-23 |
20150206738 | Surface Cleaning Method and Apparatus Using Surface Acoustic Wave Devices - An apparatus, system, and method for cleaning surfaces is presented. One embodiment of the system includes an array of surface acoustic wave (SAW) transducers coupled to a substrate. The system may include a positioning mechanism coupled to at least one of a target surface or the array of SAW transducers, and configured to position the array of SAW transducers within an effective cleaning distance of a target surface. The system may also include a cleaning liquid supply arranged to provide cleaning liquid for coupling the array of SAW transducers to the target surface. The system may further include a controller coupled to the array of SAW transducers and configured to activate the array of SAW transducers. At least one of the SAW transducers may be formed to focus cleaning liquid on a focal point and jet cleaning liquid in a direction substantially out of the place of the SAW transducer. | 2015-07-23 |
20150206739 | DEPOSITION OF HETEROATOM-DOPED CARBON FILMS - Easily removable heteroatom-doped carbon-containing layers are deposited. The carbon-containing layers may be used as hardmasks. The heteroatom-doped carbon-containing hardmasks have high etch selectivity and density and also a low compressive stress, which will reduce or eliminate problems with wafer bow. Heteroatoms incorporated into the hardmask include sulfur, phosphorous, nitrogen, oxygen, and fluorine, all of which have low reactivity towards commonly used etchants. When sulfur is used as the heteroatom, the hardmask is easily removed, which simplifies the fabrication of NAND devices, DRAM devices, and other devices. | 2015-07-23 |
20150206740 | ELECTRICAL CHARGE REGULATION FOR A SEMICONDUCTOR SUBSTRATE DURING CHARGED PARTICLE BEAM PROCESSING - A method for preparing a semiconductor target ( | 2015-07-23 |
20150206741 | APPARATUS AND METHOD FOR IN SITU STEAM GENERATION - Embodiments of an apparatus for in situ steam generation oxidation are provided. The apparatus includes a reactor chamber. The apparatus also includes a radiant source over the chamber. The radiant source includes a plurality of lamps for heating the reactor chamber. The apparatus further includes a lamphead over the radiant source for adjusting the temperature of the radiant source. In addition, the apparatus includes a gas inlet system coupled to the lamphead. The gas inlet system includes a mass flow controller for adjusting the flow rate of cooling gas into the lamphead. The apparatus includes a gas outlet system, on the opposite side of the cooling gas inlet system, coupled to the lamphead. The gas outlet system includes a pressure controller for accelerating the exhaust rate of the cooling gas. | 2015-07-23 |
20150206742 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a first element, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer. | 2015-07-23 |
20150206743 | SILICON CARBIDE EPITAXY - A method comprises providing a monocrystalline silicon wafer ( | 2015-07-23 |
20150206744 | FINFET STRUCTURES HAVING SILICON GERMANIUM AND SILICON FINS - A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pFET region of the structure includes silicon germanium fins. Such fins are formed by annealing the structure to mix a germanium containing layer with an adjoining crystalline silicon layer. The structure further includes an nFET region including silicon fins formed from the crystalline silicon layer. The germanium containing layer in the nFET region is removed to create a space beneath the crystalline silicon layer in the nFET region. An insulating material is provided within the space. The pFET and nFET regions are electrically isolated by a shallow trench isolation region. | 2015-07-23 |
20150206745 | SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water | 2015-07-23 |
20150206746 | SEMICONDUCTOR FINS ON A TRENCH ISOLATION REGION IN A BULK SEMICONDUCTOR SUBSTRATE AND A METHOD OF FORMING THE SEMICONDUCTOR FINS - Disclosed are semiconductor structures with monocrystalline semiconductor fins, which are above a trench isolation region in a semiconductor substrate and which can be incorporated into semiconductor device(s). Also disclosed are methods of forming such structures by forming sidewall spacers on opposing sides of mandrels on a dielectric cap layer. Between adjacent mandrels, an opening is formed that extends vertically through the dielectric cap layer and through multiple monocrystalline semiconductor layers into a semiconductor substrate. A portion of the opening within the substrate is expanded to form a trench. This trench undercuts the semiconductor layers and extends laterally below adjacent sidewall spacers on either side of the opening. The trench is then filled with an isolation layer, thereby forming a trench isolation region, and a sidewall image transfer process is performed using the sidewall spacers to form a pair of monocrystalline semiconductor fins above the trench isolation region. | 2015-07-23 |
20150206747 | COMPOSITION INCLUDING MATERIAL, METHODS OF DEPOSITING MATERIAL, ARTICLES INCLUDING SAME AND SYSTEMS FOR DEPOSITING MATERIAL - Methods for depositing nanomaterial onto a substrate are disclosed. Also disclosed are compositions useful for depositing nanomaterial, methods of making devices including nanomaterials, and a system and devices useful for depositing nanomaterials. | 2015-07-23 |
20150206748 | GRAPHENE LAYER FORMATION AT LOW SUBSTRATE TEMPERATURE ON A METAL AND CARBON BASED SUBSTRATE - A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source. | 2015-07-23 |
20150206749 | Diamond Semiconductor System and Method - Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer. | 2015-07-23 |
20150206750 | Method for Making Contact between a Semiconductor Material and a Contact Layer - A method for making contact between (i) a semiconductor material having silicon carbide and (ii) a contact layer having nickel oxide includes applying the contact layer to the semiconductor material, and treating at least an interface between the contact layer and the semiconductor material at an elevated temperature. An ohmic contact between the contact layer and the semiconductor material has an improved long-term stability due to an improved adhesion of the nickel to the silicon carbide. The present disclosure furthermore relates to a method for producing a semiconductor component, and to a semiconductor component. | 2015-07-23 |
20150206751 | SUBSTRATE TREATMENT METHOD - A substrate having a native oxide film formed on its surface is heated in a hydrogen atmosphere to reduce silicon dioxide to hydrogen. Additionally, silicon near an interface between the native oxide film and the substrate is hydrogen-terminated. A hydrogen-introduced layer containing silicon bonded with hydrogen is accordingly formed on the substrate surface. A dopant solution is supplied to the substrate surface having the hydrogen-introduced layer formed thereon, and hydrogen in the hydrogen-introduced layer is replaced with a dopant, thereby introducing the dopant into the substrate surface. A relatively large thickness of the hydrogen-introduced layer formed through the reduction of the native oxide film allows the dopant to be uniformly introduced into the substrate surface for a required depth. A flashing light is emitted to the substrate surface containing the introduced dopant, activating the dopant. | 2015-07-23 |
20150206752 | METHOD OF ADJUSTING A THRESHOLD VOLTAGE OF A MULTI-GATE STRUCTURE DEVICE - The present invention discloses a method of adjusting a threshold voltage of a multi-gate structure device, wherein, preparing the multi-gate structure device to be formed to have a channel impurity distribution with high doping on surface and lowly doping inside, where while a threshold voltage is adjusted by using impurity doping, the influences of the Coulomb impurity scattering on the carriers is reduced as much as possible, so that the mobility of the carriers is maintained at a higher level. Firstly, the present solution is able to make a multi-gate device obtain a larger range of a multi-threshold voltage; it is convenient for the various demands of the device in the circuit designing by IC designers. Secondly, in the course of introducing the impurity doping to adjust a threshold voltage, the influences of the Coulomb impurity scattering on the channel carrier are reduced as much as possible, so that the mobility of the charge carriers is maintained at a higher level, and the device is ensured to have a higher drive current. Finally, the present solution is achieved by the process method compatible with a conventional CMOS, and has the potential for a large scale production. | 2015-07-23 |
20150206753 | SELF-ALIGNED CONTACT AND METHOD OF FORMING THE SAME - Some embodiments of the present disclosure relate to a method to form a source/drain SAC for a transistor. The method comprises forming a pair of gate structures within a first dielectric material on a surface of a substrate, which are isolated from the first dielectric material by an etch stop material. A cap material is formed over the pair of gate structures and the first dielectric material. A pattern of mask material is formed by implanting regions of the cap material with dopants. The implanted regions of the cap material are then removed by a selective etch, which forms the pattern of mask material over each gate structure. The pattern of mask material is configured to shield each gate structure during a subsequent etch step to prevent shorting of the gate structure to the SAC. | 2015-07-23 |
20150206754 | GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN - A method of forming a semiconductor structure includes forming a gate structure having a first conductive material above a semiconductor substrate, gate spacers on opposing sides of the first conductive material, and a first interlevel dielectric (ILD) layer surrounding the gate spacers and the first conductive material. An upper portion of the first conductive material is recessed. The gate spacers are recessed until a height of the gate spacers is less than a height of the gate structure. An isolation liner is deposited above the gate spacers and the first conductive material. A portion of the isolation liner is removed so that a top surface of the first conductive material is exposed. A second conductive material is deposited in a contact hole created above the first conductive material and the gate spacers to form a gate contact. | 2015-07-23 |
20150206755 | METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE - Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process. | 2015-07-23 |
20150206756 | LOWERING TUNGSTEN RESISTIVITY BY REPLACING TITANIUM NITRIDE WITH TITANIUM SILICON NITRIDE - Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer. | 2015-07-23 |
20150206757 | DIELECTRIC-METAL STACK FOR 3D FLASH MEMORY APPLICATION - A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers. | 2015-07-23 |