32nd week of 2015 patent applcation highlights part 54 |
Patent application number | Title | Published |
20150221414 | POWER ADAPTER FOR A COMPUTING DEVICE - In accordance with aspects of the disclosure, a power adapter for a computing device having at least one processor may include a power interface for supplying power to the computing device including the at least one processor via a multi-functional cable interposed between the power adapter and the computing device. The power adapter may include a network interface for communicating with the at least one processor via the multi-functional cable and a remote server over a wireless network. The multi-functional cable may be configured with a first transitory medium for supplying power to the computing device from the power interface and a second transitory medium for transferring information between the computing device and the network interface. | 2015-08-06 |
20150221415 | Shielded Electrical Cable - A shielded electrical cable includes a conductor set, two generally parallel shielding films disposed around the conductor set, and a transition portion defined by the shielding films and the conductor set. The conductor set includes one or more substantially parallel longitudinal insulated conductors. The shielding films include a concentric portion substantially concentric with at least one of the conductors and a parallel portion wherein the shielding films are substantially parallel. The transition portion provides a gradual transition between the concentric portion and the parallel portion of the shielding films. | 2015-08-06 |
20150221416 | Cable Jacket For An Electrical Or Optical Conductor - A cable jacket for a conductor is disclosed having a flame-retardant insulation and a gas-permeable, heat-resistant outer casing. The flame-retardant insulation is positioned over the conductor so as to at least partially surround the conductor. The gas-permeable, heat-resistant outer casing surrounds the flame-retardant insulation. | 2015-08-06 |
20150221417 | GAS BLOCKING CABLE AND METHOD OF MANUFACTURING - A gas blocking cable includes cabled wires, where each wire includes cabled conductors having interstitial areas there between. An insulation material circumferentially surrounds the cabled conductors and a conductor filling material is positioned within the interstitial areas between conductors. A shield circumferentially surrounds the cabled wires so that a cable is formed with areas between the wires. A wire filling material is positioned within the areas between the wires. Each of the conductor filling material and wire filling material is inert, non-flammable and able to withstand a temperature of at least approximately 200° C. | 2015-08-06 |
20150221418 | NOISE SUPPRESSION CABLE - A noise suppression cable includes a plurality of twisted pair wires, an inclusion that includes an insulating material and a magnetic powder and separates the plurality of twisted pair wires, and a sheath that includes an insulating material and covers a periphery of the plurality of twisted pair wires and the inclusion. | 2015-08-06 |
20150221419 | METHOD FOR MANUFACTURING A POWER CABLE AND CABLE MANUFACTURED BY MEANS OF SUCH A METHOD - The invention relates to a method for manufacturing a cable, including, from the inside to the outside, a central electrical conductor ( | 2015-08-06 |
20150221420 | Process for Producing an Energy Cable Having a Thermoplastic Electrically Insulating Layer - A process for producing an energy cable including at least one electrically conductive core and at least one thermoplastic electrically insulating layer, includes the steps of: impregnating a thermoplastic material in subdivided solid form, having a melting enthalpy equal to or lower than 70 J/g, with a dielectric fluid to obtain an impregnated thermoplastic material; feeding the impregnated thermoplastic material in subdivided solid form to a single-screw extruder; and extruding the impregnated thermoplastic material onto the at least one electrically conductive core, so as to form the at least one thermoplastic electrically insulating layer, whereby the impregnated thermoplastic material is not subjected to any mechanical homogenization step in a molten state. Energy cables having a large amount of the dielectric fluid in the electrically insulting layer, e.g. higher than 10 wt %, are obtained without showing any morphological defects in the layer itself and any drawbacks in the extrusion process, even when the rotation speed of the extruder screw, and therefore, the cable production speed, are high (e.g. higher than 20 m/min for medium voltage cable). | 2015-08-06 |
20150221421 | Audio Visual Faceplate with Integrated Hinged Termination Method for Circular Connector - A communication system has a support and a communication connector attached to the support wherein the connector assembly has a termination lever. The system can further include a wire cap connected to a plurality of cable conductors. The wire cap can include a cover cap. The cover cap latches to the connector assembly when the wire cap and the plurality of cable conductors is terminated to the communication connector assembly. The support can be one of a faceplate, a patch panel, a surface mount box, or a media distribution unit. | 2015-08-06 |
20150221422 | PERMANENT MAGNET, AND MOTOR AND GENERATOR USING THE SAME - A permanent magnet of an embodiment includes: a composition represented by a composition formula: R(Fe | 2015-08-06 |
20150221423 | NdFeB SYSTEM SINTERED MAGNET - The present invention aims to provide a NdFeB system sintered magnet capable of improving the magnetization characteristic. The NdFeB system sintered magnet is a NdFeB system sintered magnet with the c axis oriented in one direction, characterized in that: the median of the grain size of the crystal grains at a section perpendicular to the c axis is 4.5 μm or less, and the area ratio of the crystal grains having grain sizes of 1.8 μm or smaller on the aforementioned section is 5% or lower. The median of the grain size is decreased (to 4.5 μm or less), whereby improve the coercive force is improved. Simultaneously, the area ratio of the crystal grains having grain sizes of 1.8 μm or smaller is decreased (to 5% or lower) to reduce the number of crystal grains having no magnetic wall formed, whereby the magnetization characteristic is improved. | 2015-08-06 |
20150221424 | SINTERED FERRITE MAGNET AND ITS PRODUCTION METHOD - A sintered ferrite magnet comprising main phases of ferrite having a hexagonal M-type magnetoplumbite structure, first grain boundary phases existing between two main phases, and second grain boundary phases existing among three or more main phases, the second grain boundary phases being dispersed in its arbitrary cross section, and the second grain boundary phases having an average area of less than 0.2 μm | 2015-08-06 |
20150221425 | MAGNETIC-CORE POLYMER-SHELL NANOCOMPOSITES WITH TUNABLE MAGNETO-OPTICAL AND/OR OPTICAL PROPERTIES - Methods are disclosed for synthesizing nanocomposite materials including ferromagnetic nanoparticles with polymer shells formed by controlled surface polymerization. The polymer shells prevent the nanoparticles from forming agglomerates and preserve the size dispersion of the nanoparticles. The nanocomposite particles can be further networked in suitable polymer hosts to tune mechanical, optical, and thermal properties of the final composite polymer system. An exemplary method includes forming a polymer shell on a nanoparticle surface by adding molecules of at least one monomer and optionally of at least one tethering agent to the nanoparticles, and then exposing to electromagnetic radiation at a wavelength selected to induce bonding between the nanoparticle and the molecules, to form a polymer shell bonded to the particle and optionally to a polymer host matrix. The nanocomposite materials can be used in various magneto-optic applications. | 2015-08-06 |
20150221426 | ROTARY INPUT DEVICE - A rotary input device includes a first annular magnetic body in which a plurality of outward protrusions protruding toward an outside in a radial direction are disposed along a circumferential direction, a second annular magnetic body in which a plurality of inward protrusions formed to oppose the outward protrusions of the first magnetic body are disposed along a circumferential direction, and a rotary knob configured to relatively rotate the first magnetic body and the second magnetic body. The first magnetic body includes a magnet in which opposing surfaces facing each other are vertically disposed and which is magnetized to two poles of an upper pole and a lower pole including the opposing surfaces, a pair of yokes that interposes the opposing surfaces of the magnet vertically, and the outward protrusion formed on the pair of yokes. | 2015-08-06 |
20150221427 | LATCHING SOLENOID REGULATOR VALVE - A latching solenoid assembly is provided which includes a solenoid actuator. A housing is also provided which has an axial passage. An intermediate piston is moved by the solenoid actuator. A reaction member is also placed within the housing axial passage spring biased by a transfer spring from the intermediate piston. The housing has a latching port allowing pressure to latch the intermediate piston in position to set the force which is transmitted to the reaction member. | 2015-08-06 |
20150221428 | INDUCTOR ARRAY CHIP AND DC-DC CONVERTER - An inductor array chip includes a magnetic laminated body and a plurality of inductors. The magnetic laminated body includes a plurality of stacked magnetic layers. The plurality of inductors are arranged inside the magnetic laminated body. The inductance of a first inductor differs from the inductance of a second inductor. The inductors include a plurality of coil-shaped conductors and via-hole conductors. The plurality of coil-shaped conductors are arranged between the magnetic layers. The via-hole conductors electrically connect the plurality of coil-shaped conductors. The inductors include a plurality of inductors in which the section sizes of the coil-shaped conductors differ from one another. | 2015-08-06 |
20150221429 | Planar Coil Module and Planar Transformer Using the Same - Disclosed is a planar coil module comprising a first planar coil, a second planar coil and a connection portion to connect the first and second planar coils in series. The first and second coils respectively include an outer loop and an inner loop connected in series, with the inner loops of the first and second planar coils being connected by the connection portion. The first and second planar coils are provided in two neighboring planes and are separated by a distance. A planar transformer including the invented planar coil module is also disclosed. | 2015-08-06 |
20150221430 | Modularized planar coil and planar transformer using the same - Disclosed is a planar coil module comprising a first planar coil, a second planar coil and a connection portion to connect the first and second planar coils in series. The first and second coils respectively include an outer loop and an inner loop, connected in series and separated by a first distance, with the inner loops of the first and second planar coils connected by the connection portion. The first and second planar coils are provided in two neighboring planes and are separated by a second distance. The outer loops of the first and second planar coils respectively include an outer terminal away from the inner loop, wherein the outer terminals extend to form a pad. The pad of the first planar coil locates at a first position at peripheral of an imaginary geometric shape that encloses the two planar coils and the pad of the second planar coil locates at a second position apart from the first position at peripheral of the geometric shape. A planar transformer including the invented planar coil module is also disclosed. | 2015-08-06 |
20150221431 | Modularized planar coil layer and planar transformer using the same - Disclosed is a modularized planar coil in the form of a planar coil layer and comprising a coil main body and two pads extended from both ends of the coil main body. The pads respectively locate at a first position at periphery of an imaginary geometric shape that encloses the coil main body and a second position apart from the first position at peripheral of the geometric shape. Winding assemblies of a plurality of the invented planar coil layers and transformers including the invented coil layers are also disclosed. The invention provides a planar transformer that is easy to prepare and useful in the SMT technology. | 2015-08-06 |
20150221432 | ELECTRONIC DEVICE - An electronic device includes a magnetic element, and a first circuit module. The magnetic element includes a magnetic core set and a winding assembled in the magnetic core set. The first circuit module is coupled to the first winding of the magnetic element. A vertical projection area of the first circuit module has an overlap portion with a vertical projection area of the winding of the magnetic core set on a first plane, and the first plane is a horizontal plane at which the winding is located. | 2015-08-06 |
20150221433 | METHOD FOR PRODUCING RARE-EARTH SINTERED MAGNET, AND MOLDING MACHINE THEREFOR - The present invention provides a method for producing a rare earth sintered magnet and a molding device therefor that can stably mold molded bodies with less variation in unit weight. The method includes: 1) preparing a slurry that includes an alloy powder containing a rare earth element, and a dispersion medium; 2) disposing an upper punch and a lower punch in respective through holes provided in a die, thereby preparing a plurality of cavities; 3) applying a magnetic field in each of the cavities by an electromagnet in a direction substantially parallel to a direction in which at least one of the upper punch and the lower punch is movable, and then supplying the slurry into the plurality of cavities; 4) producing a molded body of the alloy powder in each of the cavities by press molding in the magnetic field; and 5) sintering the molded body. | 2015-08-06 |
20150221434 | METHOD OF MANUFACTURING AN INDUCTIVE MODULE - A method of manufacturing an inductive module includes: (a) injection molding a plastic material to form a substrate that has opposite first and second surfaces and at least one receiving space indented from the first surface to the second surface; (b) disposing a ferromagnetic core unit in the receiving space; (c) forming conductive traces on the first and second surfaces of the substrate and forming conductive vias through the substrate, each of the conductive traces being electrically connected to a corresponding pair of the conductive vias; and (d) covering the conductive traces with a solder mask such that a part of the conductive traces are exposed to serve as contacts, followed by subjecting to a contact finishing process. | 2015-08-06 |
20150221435 | METHOD OF MANUFACTURING AN IGNITION COIL ASSEMBLY - A method of assembling the ignition coil assembly including a first spool, a first coil, and a second spool. The first coil is wound around a first spool outer surface. The first spool and the first coil are disposed within a cavity of the second spool and an electrically insulating material injected into an annular space defined between a first coil outer surface and a second spool inner surface. The first spool is configured to allow a decrease of a circumference of the first spool when the first coil is wound around an outer surface of the first spool. Decreasing the circumference of the first spool increases the annular space sufficient to inject the electrically insulating material into the annular space without creating substantial voids in the electrically insulating material. | 2015-08-06 |
20150221436 | ELECTRONIC COMPONENT AND MOUNTING STRUCTURE FOR THE ELECTRONIC COMPONENT - A first terminal electrode extends from a second principal surface onto first and second side surfaces and a first end surface such as not to reach a first principal surface. A second terminal electrode extends from the second principal surface onto the first and second side surfaces and a second end surface such as not to reach the first principal surface. A third terminal electrode extends from the second principal surface onto the first and second side surfaces such as not to reach the first principal surface. | 2015-08-06 |
20150221437 | MULTILAYER CERAMIC ELECTRONIC COMPONENT, MANUFACTURING METHOD THEREOF AND BOARD HAVING THE SAME MOUNTED THEREON - A multilayer ceramic electronic component may include: a ceramic body in which dielectric layers containing plate-shaped dielectric grains are stacked; and internal electrodes disposed on the dielectric layers within the ceramic body. The dielectric layer may contain dielectric grains, plate-shaped surfaces of which have an angle of 20° or less with regard to a boundary surface between the dielectric layer and the internal electrode. | 2015-08-06 |
20150221438 | DIELECTRIC COMPOSITION TO BE SINTERED AT LOW TEMPERATURE, MULTILAYER CERAMIC ELECTRONIC COMPONENT CONTAINING THE SAME, AND METHOD OF MANUFACTURING THE MULTILAYER CERAMIC ELECTRONIC COMPONENT - A dielectric composition to be sintered at low temperature may include BaTiO | 2015-08-06 |
20150221439 | PLASTIC FILM HAVING A HIGH VOLTAGE BREAKDOWN - A stretched film includes a dispersion of at least one polyester and/or polycarbonate in a matrix of at least one polyester and/or polycarbonate different from the first polyester and/or polycarbonate, the percentage by weight of the dispersed polyester and/or polycarbonate in the dispersion being less than 50% and the dispersed polyester and/or polycarbonate being in the form of platelets. The stretched film can be used as a dielectric in a capacitor. | 2015-08-06 |
20150221440 | MULTILAYER CAPACITOR AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a multilayer capacitor comprising: a laminate in which a plurality of first sheets and second sheets are alternately laminated, wherein the first sheets and the second sheets are disposed in a direction perpendicular to a mounting surface; a first inner electrode formed on the first sheets, wherein the first electrode is exposed through upper, lower, and first lateral surfaces of the laminate; a second inner electrode that is formed on the second sheets and has a horizontally symmetrical shape with respect to the first inner electrode; a sealing portion encapsulating the first and second inner electrodes exposed through two lateral surfaces of the laminate; and an external electrode that is electrically connected to the first and second inner electrodes exposed through the upper and lower surfaces of the laminate. | 2015-08-06 |
20150221441 | ELECTRONIC COMPONENT AND MOUNTING STRUCTURE OF ELECTRONIC COMPONENT - In an electronic component, each of a distance between a first outer electrode and a third outer electrode along a length direction and a distance between a second outer electrode and the third outer electrode along a length direction is about 8% to about 13% of a dimension of the electronic component along the length direction. | 2015-08-06 |
20150221442 | CAPACITOR HAVING AN IMPROVED LINEAR BEHAVIOR - A capacitor having improved linear properties is provided. The capacitor is compatible with manufacturing processes of components which function using BAW. The capacitor comprises a first and a second electrode (E | 2015-08-06 |
20150221443 | METHOD FOR MANUFACTURING ELECTRODE FOR ALUMINUM ELECTROLYTIC CAPACITOR - A porous aluminum electrode has a porous layer formed by sintering aluminum powder on the surface of an aluminum core. The porous aluminum electrode, when subjected to a formation to a voltage of 200V or more, is boiled and then subjected to a first forming process in which formation is performed in an aqueous solution of ammonium adipate at a temperature of 80° C. or below and a second forming process in which formation is performed in a boric acid aqueous solution. When heat depolarization is first carried out, washing with water is performed for five minutes or more before heat depolarization; therefore, the porous layer is not destroyed. | 2015-08-06 |
20150221444 | SOLID ELECTROLYTIC CAPACITOR MANUFACTURING METHOD - A method of manufacturing a solid electrolytic capacitor chip, which includes mounting a solid electrolytic capacitor element on the front surface side of a cathode lead of a lead frame serving as a cathode terminal; electrically connecting an anode and a cathode of the solid electrolytic capacitor element respectively to an anode terminal and the cathode terminal of the lead frame; and injecting an exterior resin from a resin injection port of a mold by transfer molding so as to seal the solid electrolytic capacitor element with the exterior resin. The resin injection port is located such that the exterior resin injected from the injection port branches and flows toward both the front surface side and the rear surface side and of the lead frame. | 2015-08-06 |
20150221445 | PHOTOASSISTED HIGH EFFICIENCY CONVERSION OF CARBON-CONTAINING FUELS TO ELECTRICITY - Electricity is generated by oxidizing a carbon-containing fuel in a photoelectrochemical fuel cell via a cyclic oxidation pathway to yield carbon dioxide and water, and collecting the electrons released via the cyclic oxidation pathway to yield a flow of electrons. The cyclic oxidation pathway includes a series of reactions of which is a photooxidation reaction. Photooxidation triggers one or more dark oxidation reactions, thereby increasing the efficiency of the photoelectrochemical fuel cell. | 2015-08-06 |
20150221446 | DYE-SENSITIZED SOLAR CELL - The present invention provides a dye-sensitized solar cell which enhances an area of a photo electrode by arranging metal wires on a surface of a transparent substrate or a transparent conductive layer without degrading a transparency of the solar cell, allowing the metal wires to act as a collector electrode exclusively or together with a metal electrode. | 2015-08-06 |
20150221447 | COMPOSITION INCLUDING LIGHT-EMITTING COMPOUND EXHIBITING AFTERGLOW - Provided is a light-emitting composition including a light-emitting compound that exhibits afterglow and represented by the following General Formula (1). | 2015-08-06 |
20150221448 | POWER STORAGE DEVICE - A power storage device that includes an electrolyte retaining layer between a first internal electrode and a second internal electrode. The electrolyte retaining layer retains an electrolyte. The first internal electrode has a first current collector and a first active material layer. The first active material layer is on a surface of the first current collector, which is closer to the second internal electrode. The second internal electrode has a second current collector and a second active material layer. The second active material layer is on a surface of the second current collector, which is closer to the first internal electrode. At least one of the electrolyte retaining layer, first active material layer, and second active material layer is exposed at the first and second end surfaces of the power storage device. | 2015-08-06 |
20150221449 | CURRENT COLLECTOR, ELECTRODE STRUCTURE, AND ELECTRICAL STORAGE DEVICE - Provided is a current collector which can secure safety by certainly exhibiting the PTC function when used for an electrode structure of an electrical storage device such as non-aqueous electrolyte batteries, electrical double layer capacitors, lithium ion capacitors, and the like. Here, the current collector shall also be capable of being used for high-speed charge/discharge, having long life, being high in safety, and having excellent productivity. According to the present invention, a current collector | 2015-08-06 |
20150221450 | ELECTROCHEMICAL DEVICE - An electrochemical device is provided with an electric storage element that is constituted by a first electrode sheet, a second electrode sheet, and a separate sheet installed between the two electrode sheets. The separate sheet includes: a first part (high liquid absorptivity part) sandwiched between the two electrode sheets; a second part (low liquid absorptivity part) extending outward from the two electrode sheets; and a third part (contact part) in contact with a rim surface of the second electrode sheet, whereby the electrochemical device can quickly and reliably resolve a phenomenon of the amount of electrolyte decreasing in the part of the separate sheet sandwiched between the two electrode sheets, even if the phenomenon occurs frequently. | 2015-08-06 |
20150221451 | ELECTROLYTE SOLUTION AND ELECTROCHEMICAL DEVICE - The present invention aims to provide an electrolyte solution that is less likely to lead to an increase in resistance and realizes high capacity retention factor even after continuous application of a high voltage, and to provide an electrochemical device. The present invention provides an electrolyte solution including: a nitrile compound; and a quaternary ammonium salt, the electrolyte solution having a potassium ion content of less than 10 ppm, a moisture content of 20 ppm or less, a tertiary amine content of 30 ppm or less, a heterocyclic compound content of 30 ppm or less, and an ammonia content of 20 ppm or less. | 2015-08-06 |
20150221452 | CURRENT COLLECTOR, ELECTRODE, SECONDARY CELL, AND CAPACITOR - Provided are a current collector which has an excellent high-rate property and exerts a sufficient safety function when employed in a secondary battery or a capacitor, as well as an electrode, a secondary battery or a capacitor in which said current collector is employed. According to the invention, a current collector is provided which comprises: metal foil; and a conductive layer with a film thickness of 0.1 μm to 10 μm formed on a surface of said metal foil. Here, said conductive layer includes a conductive material and a binder material. A melting point of said binder material is 80° C. to 150° C. Further, said binder material shows, in differential scanning calorimetry (DSC) in a range from room temperature to 200° C., one or more endothermic peaks in the heating-up process. In a case where said binder material shows two or more endothermic peaks, each difference between said peaks is 15° C. or more. Moreover, said binder material shows one or more exothermic peaks in the cooling-down process. In a case where said binder material shows only one exothermic peak, said exothermic peak falls within a range of 50 to 120° C., and a width at half maximum of said exothermic peak is 10° C. or less. On the other hand, in a case where said binder material shows two or more exothermic peaks, a maximum exothermic peak among said exothermic peaks falls within a range of 50 to 120° C., and a width at half maximum of said exothermic peak is 10° C. or less. | 2015-08-06 |
20150221453 | METHOD OF MANUFACTURING ELECTRONIC COMPONENT AND ELECTRONIC-COMPONENT MANUFACTURING APPARATUS - Electroconductive paste is applied onto an electronic component body to form an external electrode by supplying the electroconductive paste to a first groove on an outer circumferential surface of a roller to extend along a circumference of the roller, disposing the electronic component body such that a second main surface of the electronic component body and an outer circumferential surface of the roller are opposed to each other while a first edge portion defined by the second main surface and a first end surface of the electronic component body is in the first groove when viewed in plan, and pressing the electronic component body against the outer circumferential surface of the roller so that the first edge portion is located in the first groove in a depth direction of the first groove. | 2015-08-06 |
20150221454 | OSCILLATOR-TYPE SWITCH - An oscillator-type switch includes a base, an elastic member mounted on the base and flexible in an up-down direction, an oscillation member having a base portion mounted on the elastic member and a driving section connected from the base portion in a first horizontal direction along an upper surface of the base, a key top set on the oscillation member, a reversal spring applying a reaction force to a downward movement of the driving section, and a pressure-sensitive switch sheet detecting the downward movement of the driving section. The elastic member is arranged for a center line in the first horizontal direction within a range in which the elastic member is mounted on the oscillation member to be positioned outside a projection area of the operation unit in the first horizontal direction. | 2015-08-06 |
20150221455 | ELECTRICAL SWITCHING DEVICE, WHICH SWITCHES STROKE-DEPENDENTLY, WITH EXTENDED SWITCHING HYSTERESIS - The disclosure relates to an electrical switching device, which switches stroke-dependently, with extended switching hysteresis, including a switching element with a contact lever, the switching element cooperating with an actuating element movably guided in a holding device. The actuating element has a step-shaped portion for actuating the contact lever of the switching element and the actuating element has an opening in which an engagement element designed as a bolt or a pin engages when a switching action is initiated. The opening provided in the actuating element is formed as an elongated hole, in which the engagement element engages in order to achieve a switching stroke and a defined hysteresis is thus set depending on the design of the elongated hole. | 2015-08-06 |
20150221456 | ACTUATOR FOR LOW-, MEDIUM- OR HIGH-VOLTAGE SWITCHGEARS - The disclosure relates to an actuator for low-, medium- or high-voltage switchgears with a drive to move at least one movable contact, with mechanical actuation energy transmission elements between the drive and the movable contact system, in which rotating and/or translating elements mechanically correspond to at least one position determining switch. To compensate mechanically for torsion and/or bending effects, the rotating and/or the translating element is divided mechanically into a first part and a second part, movable relative to each other, a tappet element being between the parts. A relative mechanical deviation of the first part to the second part can be dimensioned such that it can compensate for the mechanical deviation caused by torsion and/or bending and/or tolerance of transmission elements. | 2015-08-06 |
20150221457 | ASSEMBLED POLE PART WITH POLE PART FRAME - An exemplary assembled pole part includes two pole part frames made of insulating material, between which a vacuum interrupter is mounted. The vacuum interrupter includes a fixed contact and a moving contact. The frame includes a first support to affix the vacuum interrupter at the moving contact side, and a second support to affix the vacuum interrupter to the fixed contact side at an opposite end of the frame. In order to apply common pole part frames for different vacuum interrupter sizes, in order to alleviate the manufacture of such pole parts, at least two fixation points are arranged pairwise in parallel along different distances along the long axis of the frame. The first support at the moving contact side maintains a specified fixation position, so the frame is configured for use with at least one other vacuum interrupter of a different length. | 2015-08-06 |
20150221458 | DISCONNECT OPERATING HANDLES SUITABLE FOR CIRCUIT BREAKERS AND RELATED BUCKET ASSEMBLIES - Disconnect operating handles for circuit breakers are configured with a rotary handle attached to an inwardly oriented shaft that connects to a gear assembly that translates rotational input to linear input. The disconnect operating handles include pivoting lockout levers that automatically “pop” out to expose the lockout space for a padlock when a user touches the lever in an appropriate location. | 2015-08-06 |
20150221459 | DISCONNECT OPERATING HANDLES SUITABLE FOR CIRCUIT BREAKERS AND RELATED BUCKET ASSEMBLIES AND HANDLE INTERLOCKS - Disconnect operating handles for circuit breakers are configured with a rotary handle attached to an inwardly oriented shaft that connects to a gear assembly that translates rotational input to linear input. The disconnect operating handles include pivoting lockout levers that can automatically “pop” out to expose the lockout space for a padlock when a user touches the lever in an appropriate location. | 2015-08-06 |
20150221460 | WATERPROOF BUTTON ASSEMBLY - A waterproof button assembly. The waterproof button assembly may include a housing including an opening and a button. The button may be positioned at least partially within the housing via the opening. The assembly may also include a plurality of engagement components positioned on opposite-distal ends of the button. The plurality of engagement components may be configured to retain the button within the housing. The engagement components may extend distally from the button, such that a portion of the engagement components may be positioned within apertures formed in the sidewall of the housing. The assembly may also include a plurality of supports, a tactile dome in contact with the button and at least one of the plurality of supports. A sensing component of the assembly may be positioned adjacent the housing and in alignment with the button and/or tactile dome for sensing actuation of the button within the assembly. | 2015-08-06 |
20150221461 | Rotary Operation Switch and Strobe Device Including Same - A rotary operation switch including a support body, an operation member rotatably supported by the support body and a switch mechanism provided therebetween to define multiple positions in a rotational direction of the operation member, wherein one of the support body and the operation member defines multiple recesses corresponding to the multiple positions, and wherein the rotary operation switch includes: a movable engaging body formed of a permanent magnet or a magnetic material and provided on the other of the support body and the operation member to engage with or disengage from the recesses as the operation member is rotated; a guiding portion provided on the other of the support body and the operation member to guide the engaging body; and a magnetic attractive force generation portion provided on the one of the support body and the operation member to exert magnetic attractive force on the engaging body. | 2015-08-06 |
20150221462 | ROTARY SWICH MECHANISM - A rotary switch includes a base seat having a shaft, a round track portion, a resilient element, a rotary element pivotally mounted onto the shaft, a contact element, a plurality of conductive terminals, a cover, and a circuit module. The base seat has a restraining portion where the resilient element is disposed therein. The rotary element is formed with an interference teeth portion. The contact element and the interference teeth portion are capable of rotating in conjunction with the rotary element whereby enabling a plurality of contact arms of the contact element to electrically contact the plurality of conductive terminals. The resilient element is deformed and stretching backwards in conjunction with rotation of the rotary element, and returns to an original position to engage with the interference teeth portion when the rotary element rotates in position. | 2015-08-06 |
20150221463 | OVER-CENTER HANDLE MECHANISM FOR INCREASED TACTILE FEEDBACK ON A ROTARY ACTUATOR - An over-center handle mechanism is provided to operate electrical equipment, such as a switch or breaker, housed in an electrical enclosure. The over-center handle mechanism includes an adaptor knob, a rotary actuator and a spring. The adaptor knob interfaces with the electrical equipment. The rotary actuator is connected to the adaptor knob, and includes a cam. A through-door handle is used to operate the rotary actuator, which in turn operates the electrical equipment via the adaptor knob. To optimize an angular torque feeling at the through-door handle, the over-center handle mechanism further includes the spring to provide an opposing force against movement of the cam of the rotary actuator, and thus, the through-door handle. A solid lubricant of PTFE may also be provided as an interface between the cam and the spring to reduce friction therebetween. | 2015-08-06 |
20150221464 | POLE PART OF A MEDIUM VOLTAGE CIRCUIT BREAKER ARRANGEMENT COMPRISING A TRIGGERED GAP UNIT - A pole part of a low-, medium- or high voltage circuit breaker arrangement includes a pole housing for accommodating a vacuum interrupter with a pair of corresponding electrical contacts. A fixed electrical contact is connected to an upper electrical terminal and a movable electrical contact is connected to a lower electrical terminal. The movable electrical contact is operated by a pushrod, and a triggered-vacuum gap or -gas gap or the combination of gas and vacuum gap connected in series is connected in parallel to the electrical contacts in order to avoid contact welding. The triggered vacuum gap or gas gap unit is removably mounted between the upper electrical terminal and the lower electrical terminal is arranged adjacent to the pole housing. Furthermore, the vacuum interrupter device can be triggered directly to protect the vacuum interrupter device from an in-rush current load during the closing operation, for example, during capacitive switching. | 2015-08-06 |
20150221465 | EMBEDDED POLE PART WITH AN ISOLATING HOUSING - An exemplary embedded pole part with an isolating housing, which accommodates a vacuum interrupter as well as electric terminals by an injected embedding material, wherein the injected embedding material is filled with silica based on silicon dioxide as filler material, and the silica is silica fume, which includes amorphous, non-porous spheres of silicon dioxide and agglomerates thereof. | 2015-08-06 |
20150221466 | TEMPERATURE SWITCH AND FLUID HEATING DEVICE - A temperature switch performs switching according to temperature of a heater. The temperature switch includes a bimetal that is deformed when the temperature of the heater reaches set temperature, a switch mechanism that is opened and closed by deformation of the bimetal, and a housing member that houses the bimetal and the switch mechanism, and that is able to conduct heat to the bimetal. The heater includes a pair of heat generation units that is adjacent to each other. The housing member includes a contact portion that is formed to project and that is inserted between the pair of heat generation units. | 2015-08-06 |
20150221467 | METHOD AND APPARATUS FOR RECIRCULATION WITH CONTROL OF SYNCHROTRON RADIATION - A method for controlling beam quality degradation from ISR and CSR and stabilizing the microbunching instability (μBI) in a high brightness electron beam. The method includes providing a super-periodic second order achromat line with each super period being individually linearly achromatic and isochronous, setting individual superperiod tunes to rational fractions of an integer (such as 4 | 2015-08-06 |
20150221468 | Composite Charged Particle Beam Device - The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns ( | 2015-08-06 |
20150221469 | TOP OPENING-CLOSING MECHANISM AND INSPECTION APPARATUS - A top opening-closing mechanism for opening and closing a top of a container including a container body and the top includes a rolling element rotatably provided at the top and positioned on the outside of the container body in a planar view, a rail, a jack for lifting the rail, and a top resting table disposed adjacent to the container and mounting the top thereon. When the top is opened, the jack lifts the rail, the rail lifts the rolling element from below, and thereby the top is lifted up from the container body. Then, the rolling element rolls on the rail and the top resting table to move the top from above the container body to the top resting table. | 2015-08-06 |
20150221470 | Charged Particle Beam Apparatus and Sample Observation Method - There is provided a charged particle beam apparatus having the function of permitting observation of a sample in a gas atmosphere or in a liquid state, the apparatus being intended to let a dry sample be observed as it is getting saturated with an introduced liquid and to prevent a charged particle beam from getting scattered by an unwanted liquid introduced between a diaphragm and the sample. This invention provides a structure including an inlet-outlet part ( | 2015-08-06 |
20150221471 | Charged Particle Beam Apparatus and Image Forming Method - In observation of a sample having a structure in its depth direction, a charged particle beam apparatus that can form an SEM image reflecting a sample shape at a desired depth by a single image acquisition while avoiding enlargement of the apparatus is provided. The apparatus has: an irradiation optical system for irradiating and scanning a charged particle beam generated from a charged particle source on the sample; a detection optical system having a detector that detects charged particles generated from the sample by the irradiation of the charged particle beam, and converts them into an electric signal at a predetermined sampling period; and an image processing unit for forming an image based on the electric signal from the detector, in which the image processing unit detects a peak of wave height values for each pixel from the electric signal at each sampling time, and forms the image based on the peak of the detected wave height values. | 2015-08-06 |
20150221472 | METHOD AND MECHANISM FOR EROSION DETECTION OF DEFINING APERTURES - A defining aperture plate having at least two differently sized apertures is used in conjunction with at least two charge collectors. Because of the difference in aperture width, the two charge collectors receive different amounts of ions, where the amount is proportional to the associated aperture width. By monitoring the ratio of the charge collected by the first charge collector to the charge collected by the second collector, the amount of erosion can be monitored and optionally compensated for. | 2015-08-06 |
20150221473 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus including a column irradiating a sample with a charged particle beam, a detector detecting a secondary particle emitted from the sample, an image data generating section generating image data indicating two-dimensional distribution of an amount of the secondary particle detected by the detector, and a controller that respectively sets first and second position adjustment irradiation frames for first and second beam condition on a surface of the sample in the image data, form a first and second irradiation traces by respectively irradiating the first and second position adjustment irradiation frames with the charged particle beams of the first and second beam conditions, correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined position of the first irradiation trace and a predetermined position of the second irradiation trace. | 2015-08-06 |
20150221474 | METHODS FOR PERFORATING TWO-DIMENSIONAL MATERIALS USING A BROAD ION FIELD - Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam. | 2015-08-06 |
20150221475 | PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD - In A plasma processing device and method is capable of efficiently generating long thermal plasma with good uniformity as well as suppressing electrostatic discharge damage, a substrate on which a thin film is formed is arranged so as to face an inductively-coupled plasma torch unit. Coils are arranged in the vicinity of a first ceramic block and a second ceramic block of the torch unit. A shielding plate in the torch unit effectively shields high-frequency electromagnetic fields generated by the coils to drastically reduce the high-frequency electromagnetic fields in the vicinity of the substrate. Therefore, electrostatic discharge damage hardly occurs. | 2015-08-06 |
20150221476 | Cold Plasma Treatment Devices and Associated Methods - A compact cold plasma device for generating cold plasma having temperatures in the range 65 to 120 degrees Fahrenheit. The compact cold plasma device has a magnet-free configuration and an induction-grid-free configuration. An additional configuration uses an induction grid in place of the input electrode to generate the cold plasma. A high voltage power supply is provided that includes a controllable switch to release energy from a capacitor bank to a dual resonance RF transformer. A controller adjusts the energy input to the capacitor bank, as well as the trigger to the controllable switch. | 2015-08-06 |
20150221477 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device. | 2015-08-06 |
20150221478 | CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS - A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode. | 2015-08-06 |
20150221479 | RPS ASSISTED RF PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING - Embodiments of the disclosure generally relate to a hybrid plasma processing system incorporating a remote plasma source (RPS) unit with a capacitively coupled plasma (CCP) unit for substrate processing. In one embodiment, the hybrid plasma processing system includes a CCP unit, comprising a lid having one or more through holes, and an ion suppression element, wherein the lid and the ion suppression element define a plasma excitation region, a RPS unit coupled to the CCP unit, and a gas distribution plate disposed between the ion suppression element and a substrate support, wherein the gas distribution plate and the substrate support defines a substrate processing region. In cases where process requires higher power, both CCP and RPS units may be used to generate plasma excited species so that some power burden is shifted from the CCP unit to the RPS unit, which allows the CCP unit to operate at lower power. | 2015-08-06 |
20150221480 | CHAMBER COATINGS - In one embodiment, a processing chamber is disclosed wherein at least one surface of the processing chamber has a coating comprising Si | 2015-08-06 |
20150221481 | ELECTROSTATIC CHUCK WITH MAGNETIC CATHODE LINER FOR CRITICAL DIMENSION (CD) TUNING - Electrostatic chucks with magnetic cathode liners for critical dimension (CD) tuning are described. For example, an electrostatic chuck (ESC) includes a cathode region. A wafer processing region is disposed above the cathode region. A magnetic cathode liner surrounds the cathode region, below the wafer processing region. The magnetic cathode liner is configured to provide magnetic field tuning capability for the ESC. | 2015-08-06 |
20150221482 | TEMPERATURE MEASURING METHOD AND PLASMA PROCESSING SYSTEM - A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (T | 2015-08-06 |
20150221483 | EMBEDDED MASK PATTERNING PROCESS FOR FABRICATING MAGNETIC MEDIA AND OTHER STRUCTURES - In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment. | 2015-08-06 |
20150221484 | DETECTION OF GROUNDING STRAP BREAKAGE - The present invention generally relates to a method for detecting the breakage of one or more grounding straps without stopping processing or opening the processing chamber for inspection. In one embodiment, a method for detecting grounding strap breakage in a processing chamber includes monitoring real-time RF related data from plasma generated in the processing chamber. The method also includes comparing the real-time RF related data with a pre-determined threshold RF related data. The method includes generating an alert if the real-time RF related data meets or exceeds the pre-determined threshold RF related data. In one embodiment, the RF related data includes RF frequency, direct current voltage, voltage peak-to-peak, and/or RF reflected power. | 2015-08-06 |
20150221485 | TUBULAR TARGET - A target for a cathode atomization system has a tubular target body made of an atomization material and two connection pieces, fastenable to the target body, for connecting the target body to a cathode atomization system. A first connection piece is connectable to a first end of the target body and a second connection piece is connectable to a second end of the target body. At least one locking device is formed on each connection piece, in order to connect the respective connection piece to the target body so that it is secured against rotation. | 2015-08-06 |
20150221486 | METHODS FOR REDUCING MATERIAL OVERHANG IN A FEATURE OF A SUBSTRATE - Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas. | 2015-08-06 |
20150221487 | SURFACE ADSORPTION VACUUM PUMPS AND METHODS FOR PRODUCING ADSORBATE-FREE SURFACES - Methods for pumping a chamber to generate substantially adsorbate-free surfaces are described. Pumping systems for achieving a vacuum based on surface adsorption are also described. | 2015-08-06 |
20150221488 | METHOD FOR IMPROVING MASS SPECTRUM REPRODUCIBILITY AND QUANTITATIVE ANALYSIS METHOD USING SAME - Methods are described for improving reproducibility of mass spectrum and quantitative analysis method using the same. More particularly, methods for improving reproducibility of a mass spectrum of a chemical compound, wherein temperatures of an ion generation reaction are controlled to be the same with each other, or wherein spectra of which temperature of ion generation reaction are the same with each other are selected from mass spectra of a chemical compound are described. In addition, methods for measuring an equilibrium constant of a proton transfer reaction between a matrix and an analyte at a certain temperature, for obtaining a calibration curve for quantitative analysis, and for quantitative analysis of an analyte by using mass spectra area described. | 2015-08-06 |
20150221489 | ION-MOBILITY SPECTROMETER INCLUDING A DECELERATING ION GATE - An ion mobility spectrometer having an ion source for generating ions; an ion detector for recording ions, and a number of substantially flat diaphragm electrodes arranged substantially perpendicular to a straight system axis that passes through the apertures in said diaphragms, with the diaphragms being arranged in a series of cells with each cell including an entrances and an exit diaphragm and a short region in between. The exit diaphragm of one cell is identical to the entrance diaphragm of the next cell, and the cells of said ion mobility spectrometer are grouped into three parts: an ion-beam forming region, an ion analyzing region, and a decelerating ion gate. | 2015-08-06 |
20150221490 | PULSED-FIELD DIFFERENTIAL MOBILITY ANALYZER SYSTEM AND METHOD FOR SEPARATING PARTICLES AND MEASURING SHAPE PARAMETERS FOR NON-SPHERICAL PARTICLES - A method for extracting shape information for particles with similar shape and corresponding system of a tandem differential mobility analyzer (DMA) and pulse field differential mobility analyzer (PFDMA) system, that executes at least generating a steady state aerosol concentration; passing aerosol flow from the aerosol concentration thru a bipolar charger to produce a known charge distribution; passing aerosol thru a DMA with set sheath and aerosol flows and a set voltage to generate a mono-mobility aerosol; passing mono-mobility aerosol thru a PFDMA system; and measuring mobility as a function of electric field by varying the duty cycle of the pulse in the PFDMA system. Alternatively, the method and system relate to separating particles with different shapes by adjusting the duty cycle of the pulse to reach a higher or lower electric field than in the DMA in which the mono-mobility aerosol was generated; and separating particles based on shape. | 2015-08-06 |
20150221491 | ASSEMBLIES FOR ION AND ELECTRON SOURCES AND METHODS OF USE - Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly. | 2015-08-06 |
20150221492 | RADIO-FREQUENCY IONIZATION OF CHEMICALS - Methods and systems for performing ionization, including applying radio frequency energy to a chemical compound so that at least one ion of the compound or of a compound fragment is generated, and detecting at least one such ion. | 2015-08-06 |
20150221493 | HIGH INTENSITY DISCHARGE LAMP - The invention describes a high intensity gas-discharge lamp comprising a discharge vessel ( | 2015-08-06 |
20150221494 | Crucible for a LUWPL - A crucible for a LUWPL is formed from a wave guide body having a central bore through it. Received within the central bore is a drawn quartz tube having its ends sealed, one having been worked flat to be coplanar with one face of the body. The other end has a vestigial tip. This is secured to the body at the orifice of the bore in the other face of the body. The securement is by means of ceramic adhesive compound. | 2015-08-06 |
20150221495 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated. | 2015-08-06 |
20150221496 | METHOD OF MANUFACTURING METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR - A method of manufacturing a metal oxide semiconductor thin film transistor includes forming a gate; forming a first gate insulating layer in contact with the gate under a hydrogen content greater than 100 ppm and an oxygen content greater than 2800 ppm; forming a second gate insulating layer in contact with the first gate insulating layer under a hydrogen content lower than or equal to 100 ppm and an oxygen content lower than or equal to 2800 ppm; forming a metal oxide semiconductor layer in contact with the second gate insulating layer, in which the second gate insulating layer is between the first gate insulating layer and the metal oxide semiconductor layer; and forming a source and a drain in contact with the metal oxide semiconductor layer. | 2015-08-06 |
20150221497 | APPARATUS INCLUDING 4-WAY VALVE FOR FABRICATING SEMICONDUCTOR DEVICE, METHOD OF CONTROLLING VALVE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE APPARATUS - An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass. | 2015-08-06 |
20150221498 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A step of preparing a silicon carbide substrate, a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas, and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas are provided. In the step of forming a first silicon carbide semiconductor layer and the step of forming a second silicon carbide semiconductor layer, ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms. | 2015-08-06 |
20150221499 | METHOD FOR PASSIVATING SURFACES, FUNCTIONALIZING INERT SURFACES, LAYERS AND DEVICES INCLUDING SAME - The invention provides a method for passivation of various surfaces (metal, polymer, semiconductors) from external contaminants, and the functionalization of inert surfaces. The method of the invention can functionalize 2D semiconductor and other insert surfaces such as non-reactive metals, oxides, insulators, glasses, and polymers. The method includes formation of a monolayer, an ordered bilayer or an ordered multilayer of metal phthalocyanines (MPc). The invention also provides layer structure in a semiconductor device, the layer structure comprising one of an ordered monolayer, ordered bilayer or ordered multi-layer of metal phthalocyanine upon a surface, and one of an ALD deposited layer or 2D semiconductor on the one of a monolayer, ordered bilayer or ordered multi-layer of metal phthalocyanine. | 2015-08-06 |
20150221500 | METHOD FOR CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE - The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution. | 2015-08-06 |
20150221501 | IMPRINT METHOD, TEMPLATE, AND IMPRINT APPARATUS - According to one embodiment, in an imprint method, a template in which a pattern is arranged in a central region and an outside region is contacted against a first imprint shot. Light is irradiated via a dimming member so that a partial region of a resist contacted by the outside region has hardness lower than target hardness, and thereafter, the template is separated. Furthermore, the template is contacted against a second imprint shot so that the first and second imprint shots are superposed in the partial region. Light is then irradiated so that the resist in the partial region reaches the target hardness, and thereafter, the template is separated. | 2015-08-06 |
20150221502 | EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME - The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C. | 2015-08-06 |
20150221503 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit. | 2015-08-06 |
20150221504 | Semiconductor Device Manufacturing Methods and Methods of Forming Insulating Material Layers - Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed. | 2015-08-06 |
20150221505 | IMPROVED WAFER COATING - Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage. | 2015-08-06 |
20150221506 | MOLECULAR PRECURSOR COMPOUNDS FOR ABIGZO ZINC-GROUP 13 MIXED OXIDE MATERIALS - Molecular precursor compounds, processes and compositions for making Zn-Group 13 mixed oxide materials including ABIGZO, AIGZO and BAIZO, by providing inks comprising a molecular precursor compound having the empirical formula Al | 2015-08-06 |
20150221507 | INDIUM GALLIUM ZINC OXIDE LAYERS FOR THIN FILM TRANSISTORS - Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In one embodiment, a method is provided for forming an IGZO active layer on a dielectric surface using a PECVD deposition process. In one embodiment, a method is provided for pretreating and passivating the dielectric surface for receiving the PECVD formed IGZO layer. In another embodiment, a method is provided for treating a PECVD formed IGZO layer after depositing said layer. In another embodiment, a method is provided for forming a multi-layer or complex layering structure of IGZO, within a PECVD processing chamber, for optimizing TFT electrical characteristics such as carrier density, contact resistance, and gate dielectric interfacial properties. In yet another embodiment, a method is provided for forming integrated layers for a TFT including IGZO within an in-situ environment of a cluster tool. | 2015-08-06 |
20150221508 | APPARATUS AND METHOD OF FORMING AN INDIUM GALLIUM ZINC OXIDE LAYER - The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired. | 2015-08-06 |
20150221509 | IN-SITU STRAINING EPITAXIAL PROCESS - A method includes forming a recess in a semiconductor substrate, the recess being adjacent to a gate stack, performing an epitaxial growth process within the recess to form a straining region, and forming a defect within the straining region in-situ with the epitaxial growth process. | 2015-08-06 |
20150221510 | METHOD OF MANUFACTURING HORIZONTALLY ALIGNED SINGLE CRYSTALLINE INORGANIC NANOWIRE PATTERNS - Disclosed is that a method of manufacturing horizontally aligned single crystalline inorganic nanowire patterns, including mixing an inorganic precursor and an organic polymer in water or an organic solvent to prepare an inorganic-polymer liquid, forming inorganic precursor/organic polymer composite nanowire patterns aligned on a substrate using the inorganic-polymer liquid, and irradiating eximer laser along the aligned inorganic precursor/organic polymer composite nanowire patterns. | 2015-08-06 |
20150221511 | METHOD FOR PRODUCING SIC SINGLE CRYSTAL - Provided is a method for producing an SiC single crystal, which is capable of greatly increasing the growth rate in a solution technique in comparison to conventional methods. A method for producing an SiC single crystal, wherein an SiC single crystal is grown by bringing a seed crystal substrate into contact with an Si—C solution that is put in a crucible and has a temperature gradient decreasing from the inside to the liquid level, and wherein the value of depth/inner diameter of the crucible is less than 1.71 and the temperature gradient of the Si—C solution from the liquid level to 10 mm below the liquid level is larger than 42° C./cm. | 2015-08-06 |
20150221512 | Method of Growing Gallium Nitride-Based Crystal and Heat Treatment Apparatus - There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate. | 2015-08-06 |
20150221513 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - A process for producing polycrystalline silicon, comprising: a silicon deposition step for producing silicon through a reaction between a chlorosilane compound and hydrogen; a conversion reaction step for removing hydrogen chloride contained in an exhaust gas discharged from the silicon deposition step by bringing the exhaust gas into contact with activated carbon; a separation step for separating hydrogen contained in the gas after the conversion reaction obtained from the conversion reaction step; and a recycling step for supplying hydrogen obtained from the separation step to the silicon deposition step, wherein at least one of the following conditions (1) and (2) is satisfied: (1) the gas after the conversion reaction obtained from the conversion reaction step is brought into contact with an adsorbent containing a Lewis acid compound before the separation step; and (2) hydrogen obtained from the separation step is brought into contact with an adsorbent containing a Lewis acid compound before it is supplied to the silicon deposition step. | 2015-08-06 |