32nd week of 2012 patent applcation highlights part 13 |
Patent application number | Title | Published |
20120199795 | Enhanced plasma gasifiers for producing syngas - A plasma gasification reactor, and process for its operation, with one or both of, first, a quench zone within an upper part of a top section of the reactor and, second, feed ports through a lateral wall of a middle section of the reactor for supplying feed material to a feed bed within the middle section and the feed ports located proximate the feed bed. The quench zone is provided with nozzles for introducing a fluid to reduce the temperature of molten solid bits sufficiently to minimize their sticking within external ductwork. The middle section feed port arrangement assists in more thorough reaction of light particles in the feed material that may otherwise exit with gaseous products. | 2012-08-09 |
20120199796 | Sintered Compact of Indium Oxide System, and Transparent Conductive Film of Indium Oxide System - A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low. | 2012-08-09 |
20120199797 | HIGH-pH SYNTHESIS OF NANOCOMPOSITE THERMOELECTRIC MATERIAL - A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure. | 2012-08-09 |
20120199798 | ELECTROPHORETIC FLUID - The present invention is directed to a display fluid comprising charged composite pigment particles dispersed in a solvent. The composite pigment particles have a density which matches to the density of the solvent in which they are dispersed. A display fluid comprising the composite pigment particles provides improved display performance. | 2012-08-09 |
20120199799 | APPARATUS AND METHOD FOR STRINGING AERIAL CABLES USING AIRCRAFT - Apparatus and method for stringing aerial cables through tower structures using aircraft without requirement that a person be present on the tower while the aircraft is performing the stringing operation are described. An elongated needle-like threading member to which a sock line is attached and having spaced-apart projections emanating therefrom at different directions around the threading member, is directed by the aircraft pilot through a block having a pulley suspended by an insulator or other tower structure, the projections in cooperation with the block preventing the threading member from being pulled rearwardly under tension from the sock line. A device adapted for grabbing and releasing the threading member and attached to an aircraft haul line, permits the threading member to be hauled forward through the block once the aircraft flies to the other side of the tower and reattaches the grabbing device to the threading member. | 2012-08-09 |
20120199800 | HOISTING ASSEMBLY - A hoisting assembly for lifting or lowering a heavy object includes an upper fixed block, an upper movable block being suspended from the upper fixed block by at least one first rope which is reeved into one or more first rope lengths between the upper fixed block and the upper movable block, a lower movable block being connected to the upper movable block by at least one second rope which is reeved into one or more second rope lengths between the upper fixed block and the upper movable block. The first and second ropes are reeved in such a way that in use the upper movable block can be positioned at a distance greater than zero from the upper fixed block and at a distance greater than zero from the lower movable block by controlling the lengths of the first and second ropes. | 2012-08-09 |
20120199801 | LAWNMOWER JACK DEVICE ASSISTED BY AN OUTBOARD MOUNTED CYLINDER - A lifting and/or tilting device is provided for a grass cutting machine, such as a ride-on mower. The device includes a fixed chassis element designed to rest on the ground. A movable chassis element is capable of accommodating at least one wheel of the machine and is movable about an axle supported by the fixed chassis element, between a stowed position, in which the movable chassis element extends essentially in the plane formed by the fixed chassis element, and at least one raised position in which the movable chassis element is separated from the fixed chassis element. The device has a cylinder with a body that is attached permanently to the fixed chassis element and a shaft that is movable relative to the body, attached permanently to the movable chassis element, and mounted in such manner that in the raised position it extends essentially outside of the zone delimited by the fixed and movable chassis elements. | 2012-08-09 |
20120199802 | CABLE-BARRIERS - A terminal post for a cable barrier which includes:
| 2012-08-09 |
20120199803 | SWING GATE - A swing gate ( | 2012-08-09 |
20120199804 | HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE - A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer | 2012-08-09 |
20120199805 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element ( | 2012-08-09 |
20120199806 | POLYSILICON EMITTER BJT ACCESS DEVICE FOR PCRAM - A resistive non-volatile memory cell with a bipolar junction transistor (BJT) access device formed in conjunction with the entire memory cell. The memory cell includes a substrate acting as a collector, a semiconductor base layer acting as a base, and a semiconductor emitter layer acting as an emitter. Additionally, metal plugs and the phase change memory element are formed above the BJT access device while the emitter, metal plugs, and phase change memory element are contained within an insulating region. In one embodiment of the invention, a spacer layer is formed and the emitter layer is contained within the protective spacer layer. The spacer layer is contained within the insulating region. | 2012-08-09 |
20120199807 | SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING A DIODE STRUCTURE AND METHODS OF FORMING SAME - Methods of forming diode structures for use in memory cells and memory arrays, such as resistive random access memory (RRAM). The methods include forming a first electrode by chemisorbing a graphite material (e.g., graphene) on a conductive material. A low-k dielectric material may be formed over surfaces of the first electrode exposed through an opening in a dielectric material overlying the first electrode, followed by formation of a high-k dielectric material over the low-k dielectric material. A remaining portion of the opening may be filled with another conductive material to form a second electrode. The first and second electrodes of the resulting diode structure have different work functions and, thus, provide a low thermal budget, a low contact resistance, a high forward-bias current and a low reverse-bias current. A memory cell and a memory array including such a diode structure are also disclosed. | 2012-08-09 |
20120199808 | HIGH VOLTAGE-RESISTANT LATERAL DOUBLE-DIFFUSED TRANSISTOR BASED ON NANOWIRE DEVICE - The present invention provides a high voltage-resistant lateral double-diffused transistor based on a nanowire device, which relates to the field of microelectronics semiconductor devices. The lateral double-diffused MOS transistor includes a channel region, a gate dielectric, a gate region, a source region, a drain region, a source end extension region and a drain end S-shaped drifting region, wherein the channel region has a lateral cylindrical silicon nanowire structure, on which a layer of gate dielectric is uniformly covered, the gate region is on the gate dielectric, the gate region and the gate dielectric completely surround the channel region, the source end extension region lies between the source region and the channel region, the drain end S-shaped drifting region lies between the drain region and the channel region, the plan view of the drain end S-shaped drifting region is in the form of single or multiple S-shaped structure(s), and an insulating material with a relative dielectric constant of 1-4 is filled within the S-shaped structure(s). The invention can improve the high voltage-resistant capability of a lateral double-diffused transistor based on a silicon nanowire MOS transistor. | 2012-08-09 |
20120199809 | METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES - A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes. | 2012-08-09 |
20120199810 | GROWTH SUBSTRATE AND LIGHT EMITTING DEVICE - Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids. | 2012-08-09 |
20120199811 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film. | 2012-08-09 |
20120199812 | STRAIN TUNABLE SILICON AND GERMANIUM NANOWIRE OPTOELECTRONIC DEVICES - Silicon, silicon-germanium alloy, and germanium nanowire optoelectronic devices and methods for fabricating the same are provided. According to one embodiment, a P-I-N device is provided that includes a parallel array of intrinsic silicon, silicon-germanium or germanium nanowires located between a p+ contact and an n+ contact. In certain embodiments, the intrinsic silicon and germanium nanowires can be fabricated with diameters of less than 4.9 nm and 19 nm, respectively. In a further embodiment, vertically stacked silicon, silicon-germanium and germanium nanowires can be formed. | 2012-08-09 |
20120199813 | EXTREME HIGH MOBILITY CMOS LOGIC - A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate. | 2012-08-09 |
20120199814 | SILICON-BASED TUNNELING FIELD EFFECT TRANSISTORS AND TRANSISTOR CIRCUITRY EMPLOYING SAME - A p-channel tunneling field effect transistor (TFET) is selected from a group consisting of (i) a multi-layer structure of group IV layers and (u) a multi-layer structure of group III-V layers. The p-channel TFET includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary III-V alloy. An n-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers and (u) a multi-layer structure of group III-V layers. The n-channel TFET includes an n-type region, a p-type region with a p-type delta doping, and a channel region disposed between and spacing apart the n-type region and the p-type region. The p-channel TFET and the n-channel TFET may be electrically connected to define a complementary field-effect transistor element. TFETs may be fabricated from a silicon-germanium TFET layer structure grown by low temperature (500 degrees Centigrade) molecular beam epitaxy. | 2012-08-09 |
20120199815 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film ( | 2012-08-09 |
20120199816 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion device according to the present invention includes, between a pair of electrodes, an electron donor layer having an interdigitated shape in cross section comprising a stripe-like part in cross section and a base, a plurality of strip-like parts in cross section extending in a direction intersecting electrode main surfaces being formed at intervals in the stripe-like part in cross section; and an electron acceptor layer having an interdigitated shape in cross section comprising a stripe-like part in cross section and a base, a plurality of strip-like parts in cross section extending in a direction intersecting the electrode main surfaces being formed at intervals in the stripe-like part in cross section, the photoelectric conversion device further including an active layer in which the plurality of strip-like parts in cross section of the electron donor layer and the plurality of strip-like parts in cross section of the electron acceptor layer are alternately joined. A stripe width a of the stripe-like part in cross section of the electron donor layer and a stripe width b of the stripe-like part in cross section of the electron acceptor layer are both 5 to 100 nm. When a=b, a thickness c of the active layer is twice to 40 times as large as a (=b). When a≠b, the thickness c of the active layer is twice or more of one of a and b which is smaller and 40 times or less of one of a and b which is larger. | 2012-08-09 |
20120199817 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes an anode, a cathode, and an organic thin-film layer interposed between the anode and the cathode. The organic thin-film layer includes a phosphorescent-emitting layer containing a host and a phosphorescent dopant, and an electron transporting layer that is provided closer to the cathode than the phosphorescent-emitting layer. The host contains a substituted or unsubstituted polycyclic fused aromatic skeleton. | 2012-08-09 |
20120199818 | TRIAZOLE DERIVATIVE, AND LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE WITH THE USE OF TRIAZOLE DERIVATIVE - It is an object of the present invention to provide a novel triazole derivative. Further, it is another object of the present invention to provide a light-emitting element having high luminous efficiency with the use of the novel triazole derivative. Moreover, it is still another object of the present invention to provide a light-emitting device and electronic devices which have low power consumption. A light-emitting element having high luminous efficiency can be manufactured with the use of a triazole derivative which is a 1,2,4-triazole derivative, in which an aryl group or a heteroaryl group is bonded to each of 3-position, 4-position, and 5-position, and in which any one of the aryl group or heteroaryl group has a 9H-carbazol-9-yl group. | 2012-08-09 |
20120199819 | Light Emitting Element, Light Emitting Device, and Electronic Device - A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary. | 2012-08-09 |
20120199820 | MONOAMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - An organic electroluminescence device includes: an anode; a cathode being opposed to the anode; and an emitting layer being provided between the anode and the cathode. The emitting layer includes a host material and a phosphorescent dopant material. The host material includes a monoamine derivative represented by a formula-(1A) below. | 2012-08-09 |
20120199821 | ORGANIC DUAL-GATE MEMORY AND METHOD FOR PRODUCING SAME - The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface. | 2012-08-09 |
20120199822 | ORGANIC TRANSISTOR - An organic transistor ( | 2012-08-09 |
20120199823 | DINUCLEAR PLATINUM-CARBENE COMPLEXES AND THE USE THEREOF IN OLEDS - The present invention relates to dinuclear Pt-carbene complexes comprising carbene ligands and pyrazole bridges, to a process for preparing the dinuclear Pt-carbene complexes by contacting suitable Pt compounds with the corresponding ligands or ligand precursors and/or pyrazole or corresponding pyrazole derivatives, to organic electronic components comprising at least one such dinuclear Pt-carbene complex, to an OLED comprising at least one such dinuclear Pt-carbene complex, to a light-emitting layer comprising at least one such dinuclear Pt-carbene complex, to an OLED comprising such a light-emitting layer, to a device selected from the group consisting of stationary visual display units, mobile visual display units and illumination means, comprising such an OLED, and to the use of an inventive dinuclear Pt-carbene complex in OLEDs. | 2012-08-09 |
20120199824 | ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC THIN FILM TRANSISTOR - Provided are an organic semiconductor material, organic semiconductor thin film and organic thin-film transistor, which contain a perylene tetracarboxylic diimide derivative represented by the following formula (1): | 2012-08-09 |
20120199825 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device comprising an anode, a cathode, a light emitting layer that is disposed between the anode and the cathode and contains a first light emitting layer material containing a phosphorescent compound and a second light emitting layer material containing a charge transporting polymer compound (that is, a light emitting layer containing a first light emitting layer material and a second light emitting layer material), and a hole transporting layer that is disposed between the anode and the light emitting layer so as to be adjacent to the light emitting layer and is composed of a hole transporting polymer compound, wherein the lowest excitation triplet energy T1 | 2012-08-09 |
20120199826 | PHOTODETECTION DEVICE AND OPTICAL FILTER USED THEREIN - Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element. | 2012-08-09 |
20120199827 | THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode. | 2012-08-09 |
20120199828 | STABLE P-TYPE SEMICONDUCTING BEHAVIOUR IN LI AND NI CODOPED ZNO - A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate. | 2012-08-09 |
20120199829 | SEMICONDUCTOR DEVICE - A semiconductor device includes: plural devices to be measured; and a combined array wiring including plural unit array wirings each having a column wiring and a row wiring provided in different layers as well as each connected to any one of the plural devices to be measured, in which the plural unit array wirings are provided in layers different from each other. | 2012-08-09 |
20120199830 | Integrated Microelectronic Package Temperature Sensor - Temperatures in microelectronic integrated circuit packages and components may be measured in situ using carbon nanotube networks. An array of carbon nanotubes strung between upstanding structures may be used to measure local temperature. Because of the carbon nanotubes, a highly accurate temperature measurement may be achieved. In some cases, the carbon nanotubes and the upstanding structures may be secured to a substrate that is subsequently attached to a microelectronic package. | 2012-08-09 |
20120199831 | LIQUID CRYSTAL DISPLAY DEVICE - To provide a liquid crystal display device having high visibility and high image quality by relieving color phase irregularity. A light-shielding layer is selectively provided so as to overlap with a contact hole for electrical connection to a source region or a drain region of a thin film transistor. Alternatively, by providing an opening portion of a colored layer (color filter) with an opening so as to overlap with a contact hole, uneven alignment of liquid crystal molecules does not influence display, and a liquid crystal display having high image quality can be provided. | 2012-08-09 |
20120199832 | PROCESS FOR PRODUCING DOPED SILICON LAYERS, SILICON LAYERS OBTAINABLE BY THE PROCESS AND USE THEREOF - The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components. | 2012-08-09 |
20120199833 | RADIATION DETECTOR - A radiation detector of this invention has a barrier layer on the upper surface of a high resistance film along the outer edge of a common electrode, which enables prevention of a chemical reaction between an amorphous semiconductor layer and a curable synthetic resin. The barrier layer is adhesive to the curable synthetic resin film, and this can prevent strength being insufficient, such that temperature changes cause separation in interfaces between the barrier layer and curable synthetic resin film, thereby reducing the effect of inhibiting warpage and cracking. The material for the barrier layer is an insulating material not including a substance that would chemically react with the amorphous semiconductor layer. This can prevent components of the material for the barrier layer from chemically reacting with the semiconductor layer. Consequently, creeping discharge at the outer edge of the common electrode where electric fields concentrate can be prevented. | 2012-08-09 |
20120199834 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a display device and a manufacturing method thereof. A display device according to an exemplary embodiment of the present invention includes a substrate including a first surface and a second surface, a first line disposed on the first surface and made of a transparent metal oxide semiconductor, and a first semiconductor disposed on the first surface and made of the transparent metal oxide semiconductor. | 2012-08-09 |
20120199835 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - The present invention relates to a thin film transistor array panel and a manufacturing method thereof, and a thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a first conductive layer disposed on the substrate; a second conductive layer overlapping at least a portion of the edge of the first conductive layer on the first conductive layer and including a first portion overlapping the first conductive layer and a second portion not overlapping the first conductive layer; a first insulating layer disposed on the second conductive layer and having a contact hole exposing at least a portion of a boundary between the first portion and the second portion; and a third conductive layer disposed on the first insulating layer and simultaneously contacting the first portion and the second portion that are exposed through the contact hole. | 2012-08-09 |
20120199836 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 2012-08-09 |
20120199837 | ORGANIC ELECTROLUMINESCENT ELEMENT AND ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - In an organic EL element ( | 2012-08-09 |
20120199838 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer. | 2012-08-09 |
20120199839 | SEMICONDUCTOR ELEMENT, ORGANIC TRANSISTOR, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer. | 2012-08-09 |
20120199840 | SEMICONDUCTOR DEVICE HAVING A PIXEL MATRIX CIRCUIT THAT INCLUDES A PIXEL TFT AND A STORAGE CAPACITOR - In a CMOS circuit formed on a substrate | 2012-08-09 |
20120199841 | Gallium and Nitrogen Containing Trilateral Configuration for Optical Devices - Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described. | 2012-08-09 |
20120199842 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly integrated DRAM is provided. A bit line is formed over a first insulator, a second insulator is formed over the bit line, third insulators which are in a stripe shape and the like are formed over the second insulator, and a semiconductor region and a gate insulator are formed to cover one of the third insulators. The bit line is connected to the semiconductor region through first contact plugs. Then, a conductive film is formed and subjected to anisotropic etching to form word lines at side surfaces of the third insulators, and a second contact plug is formed to be connected to a capacitor at a top of the one of the third insulators. By synchronizing the word lines, electric charge is accumulated or released through the capacitor. With such a structure, the area of a memory cell can be 4F | 2012-08-09 |
20120199843 | HIGH REFLECTIVE BOARD OR SUBSTRATE FOR LEDS - Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material. | 2012-08-09 |
20120199844 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure | 2012-08-09 |
20120199845 | METALLIC CARRIER FOR LAYER TRANSFER AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer. | 2012-08-09 |
20120199846 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device of an embodiment at least includes: a SiC substrate; and a gate insulating film formed on the SiC substrate, wherein at an interface between the SiC substrate and the gate insulating film, some of elements of both of or one of Si and C in an outermost surface of the SiC substrate are replaced with at least one type of element selected from nitrogen, phosphorus, and arsenic. | 2012-08-09 |
20120199847 | SEMICONDUCTOR DEVICE - A semiconductor device according to one embodiment includes: a unit FET cell(s) having multi-fingers composed of parallel connection of a unit finger; a designated gate bus line(s) configured to connect gate fingers of the unit FET cell having multi-fingers in parallel; and a gate extracting line(s) configured to be connected to the designated gate bus line, wherein a connecting point between the gate extracting line and the designated gate bus line is shifted from a center in the unit FET cell having multi-fingers, and thereby the numbers of the gate fingers connected to one side of the connecting point is more than the number of the gate fingers connected to another side of the connecting point. | 2012-08-09 |
20120199848 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A buffer layer is provided on a substrate, is made of silicon carbide containing an impurity, and has a thickness larger than 1 μm and smaller than 7 μm. A drift layer is provided on the buffer layer and is made of silicon carbide having an impurity concentration smaller than that of the buffer layer. In this way, there can be provided a silicon carbide semiconductor device having the drift layer having a desired impurity concentration and a high crystallinity. | 2012-08-09 |
20120199849 | METHOD OF FABRICATION OF METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR - A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved. | 2012-08-09 |
20120199850 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the surface of the semiconductor layer. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the semiconductor layer and the insulating film is not less than 1×10 | 2012-08-09 |
20120199851 | SEMICONDUCTOR RELAY - A semiconductor relay includes two MOSFETs; a light emitting element; a light-receiving drive element for switching on and off the two MOSFETs; two output and two input conductor plates electrically connected to the two MOSFETs and the light emitting element, respectively; and an encapsulating resin encapsulating the two MOSFETs, the light emitting element, the light-receiving drive element, the two output and the two input conductor plates. The two output and two input conductor plates includes terminal portions which protrude outside the encapsulating resin and are mounted on a common printed circuit board. Further, the two output conductor plates includes mount portions on which the two MOSFETs are mounted or on which drain electrodes of the two MOSFETs are connected, and the mount portions are encapsulated by the encapsulating resin in such an orientation that a thickness direction of the mount portions intersects that of the printed circuit board. | 2012-08-09 |
20120199852 | LIGHT-EMITTING DIODE COMPONENT - An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base. | 2012-08-09 |
20120199853 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 2012-08-09 |
20120199854 | ACTIVE MATRIX SUBSTRATE AND ORGANIC EL DISPLAY DEVICE - The present invention provides an active matrix substrate driven by an analog gray scale method, and an organic EL display device, in which decrease in response speed of a current emissive element is suppressed. The active matrix substrate of the present invention is driven by an analog gray scale method and is provided with a pixel that has a current emissive element and a transistor that supplies current to the current emissive element. The pixel further has a compensation circuit for compensating variability of threshold voltage in the transistor; the current emissive element has a pixel electrode electrically connected to the transistor; a gate electrode of a transistor that makes up the compensation circuit forms a region covered with the pixel electrode; and a part or the entirety of the gate electrode that is positioned within the region is provided in a wiring layer that is lower than a wiring layer directly below the pixel electrode. | 2012-08-09 |
20120199855 | LIGHT EMITTING ELEMENT AND IMAGE DISPLAY APPARATUS USING THE LIGHT EMITTING ELEMENT - The present invention is intended to realize a light emitting element which is easy to fabricate, is efficient, and is able to emit light in a uniform polarization state enabling the achievement of high luminance. A light emitting element of the present invention is a light emitting element including an active layer for generating light, the light emitting element including: a first reflection layer that allows the light generated at the active layer to reflect at a reflection section in which reflection members are periodically provided, and to exit from an exiting section between the reflection members; a polarization beam splitter layer that transmits a polarized light oriented in a first direction and diffracts a polarized light oriented in a second direction orthogonal to the first direction among the light exited from the exiting section; a wave plate layer that allows the light transmitted through the polarization beam splitter layer and the light diffracted at the polarization beam splitter layer to enter, and to exit as a light of a same polarization state; and a second reflection layer that reflects the light reflected at the first reflection light. | 2012-08-09 |
20120199856 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE - An organic electro-luminescence (EL) display device according to the present invention includes: a main substrate; a display section provided above the main substrate and including a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a bank; a blue color filter provided above the display section, which selectively transmits blue light and selectively absorbs green light and red light; and a red color filter provided above the display section, which selectively transmits the red light and selectively absorbs the blue light and the green light, wherein the blue color filter has openings each at a position corresponding to the red light-emitting layer or the green light-emitting layer, and the red color filter has openings each at a position corresponding to the green light-emitting layer or the blue light-emitting layer. | 2012-08-09 |
20120199857 | Wafer-Scale Emitter Package Including Thermal Vias - Improved packages for light emitters may be fabricated at the wafer level. The package can be a single device or an array of die. The package includes a thermal via that extends through the thickness of the package substrate. The thermal via may be made of a material possessing a high thermal conductivity. The thermal via may be wider at the package exterior than at the interior to provide heat spreading between the device and its heat sink. The taper angle of the thermal via may be around 45 degrees to match the natural spread of heat in a solid. The thermal via may extend above the package interior, so its height is sufficient to position an emitter placed thereon at one foci of a parabola, where the vertex of the parabola is at the surface of the package substrate from which the thermal via extends. | 2012-08-09 |
20120199858 | LIGHT EMISSIVE CERAMIC LAMINATE AND METHOD OF MAKING SAME - A light emitting device includes: at least one light emitting component (LEC) comprising a light-emitting face having a longest linear dimension D | 2012-08-09 |
20120199859 | ELECTROLUMINESCENT DISPLAY APPARATUS - A display apparatus includes an organic electroluminescent element, a protective layer provided in contact with the organic electroluminescent element and configured to cover the organic electroluminescent element, and a condenser lens provided in contact with the protective layer and on a light output side of the organic electroluminescent element. The condenser lens includes a convex surface having a sloping angle θ | 2012-08-09 |
20120199860 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - In a FC-mounted semiconductor light-emitting element, rise of a forward voltage is suppressed and light emission output is increased. A semiconductor light-emitting element includes: a laminated semiconductor layer including a first semiconductor layer having a first conduction type, a light-emitting layer and a second semiconductor layer having a second conduction type opposite to the first conduction type; a first electrode connected to the first semiconductor layer; and a second electrode provided on the second semiconductor layer, the second electrode including: a transparent conductive layer having thick portions and transparent to light from the light-emitting layer; an insulation layer laminated on the transparent conductive layer with a lower refractive index than the transparent conductive layer; a conductive metal reflecting layer laminated on the insulation layer; and a conductor portion provided through the insulation layer, which is electrically connected to one of the thick portions and the metal reflecting layer. | 2012-08-09 |
20120199861 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: a light emitting layer and a p-type semiconductor layer laminated on an n-type semiconductor layer; a transparent conductive layer laminated on the p-type semiconductor layer; a transparent insulating layer laminated on the transparent conductive layer and the exposed n-type semiconductor layer, the transparent insulating layer having plural tapered through-holes formed therein; a p-electrode formed on the transparent conductive layer with the transparent insulating layer interposed therebetween, the p-electrode being connected to the transparent conductive layer via the through-holes provided for the transparent insulating layer; and an n-electrode formed on the n-type semiconductor layer with the transparent insulating layer interposed therebetween, the n-electrode being connected to the n-type semiconductor layer via the through-holes provided for the transparent insulating layer. | 2012-08-09 |
20120199862 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space. | 2012-08-09 |
20120199863 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer. | 2012-08-09 |
20120199864 | LIGHT EMITTING DEVICE - A light emitting device is provided. The light emitting device includes a reflective layer, a conductive dielectric layer on the reflective layer and a semiconductor layer including an active layer on the conductive dielectric layer. And a distance “d” between the reflective layer and a light emitting portion of the active layer corresponds to a constructive interference condition. And the conductive dielectric layer includes a lower conductive dielectric layer on the reflective layer; an intermediate layer on the lower conductive dielectric layer and an upper conductive dielectric layer on the intermediate layer. | 2012-08-09 |
20120199866 | REFLECTIVE ANODE ELECTRODE FOR ORGANIC EL DISPLAY - Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.1-6% by atom of Ag and an oxide conductive film that is formed on the Al-based alloy film so as to be in direct contact with the Al-based alloy film. | 2012-08-09 |
20120199867 | METHOD FOR ATTACHING AN ELECTRONIC COMPONENT TO A PRODUCT - An electronic component is attached to a product, using a transfer method involving the use of a transfer sheet including a substrate sheet and at least one transfer layer covering a portion of the front surface of the substrate sheet. The transfer method consists in: placing the transfer layer in contact with the product; applying a pressure against the back surface of the substrate sheet; and finally removing the substrate sheet, said at least one transfer layer remaining affixed to the product. In addition, the attachment method includes a step prior to the transfer method, during which at least one electronic assembly including at least one electronic chip attached to at least one wire is positioned between the product and the substrate sheet, such that at least one portion of each assembly is held in place by a transfer layer following the removal of the substrate sheet. | 2012-08-09 |
20120199868 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention provides a semiconductor light emitting element having; a semiconductor layer where an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; an n-side electrode connected to the n-type semiconductor layer; and a p-side electrode connected to the p-type semiconductor layer; when the semiconductor light emitting element is viewed from above, the n-side electrode has a n-side pad electrode and n-side extension, the n-side extension comprises an n-side first extension extending from the n-side pad electrode toward the p-side pad electrode and an n-side second extension extending from the n-side first extension and formed T shape with the n-side first extension, the p-side electrode has a p-side pad electrode and a p-side extension formed so as to surround the n-side electrode, the p-side side extension comprises an p-side first extension extending from the p-side pad electrode parallel to the n-side second extension. | 2012-08-09 |
20120199869 | Light-Emitting Device - To provide a light-emitting device having a top-emission structure with low power consumption. A convex structure body is formed over a substrate to be provided with an organic EL element, and then an upper electrode layer is formed. Thus, the upper electrode layer has a shape following the convex shape. In addition, a conductive layer is formed over a substrate sealing an organic EL layer. Then, by sealing a surface where the upper electrode layer is formed and a surface where the conductive layer is formed are sealed to face each other, at least part of the electrode layer overlapped with the convex structure body is in contact with the conductive layer, so that the resistivity of the upper electrode layer is significantly reduced. Thus, power consumption of a light-emitting element can be reduced. | 2012-08-09 |
20120199870 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device includes a first electrode, a second electrode, an organic emission layer between the first electrode and the second electrode, and an auxiliary electrode in a hole which penetrates the second electrode and the organic emission layer, and exposes the first electrode. | 2012-08-09 |
20120199871 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes a power feeding line to which a predetermined voltage is supplied; a light-emitting element formed of a first electrode, a second electrode, and a light-emitting layer interposed between the first electrode and the second electrode; and a driving transistor that controls the amount of current supplied to the light-emitting element from the power feeding line. The power feeding line includes a portion interposed between the first electrode and the driving transistor. | 2012-08-09 |
20120199872 | METHOD FOR HYBRID ENCAPSULATION OF AN ORGANIC LIGHT EMITTING DIODE - Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes. | 2012-08-09 |
20120199873 | METAL SUBSTRATE FOR LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE - The object of the present invention is to provide a metal substrate for a light-emitting diode having excellent chemical resistance, a light-emitting diode, and a method for manufacturing the light-emitting diode, and the present invention provides a metal substrate for a light-emitting diode including a metal substrate, a compound semiconductor layer having a light-emitting portion, which is joined over the metal substrate via a junction layer, wherein the metal substrate for a light-emitting diode includes a metal plate and a metal protective film which covers at least an upper surface and a lower surface of the metal plate. | 2012-08-09 |
20120199874 | APPARATUS AND METHOD FOR TRANSIENT ELECTRICAL OVERSTRESS PROTECTION - An apparatus and method for high voltage transient electrical overstress protection are disclosed. In one embodiment, the apparatus includes an internal circuit electrically connected between a first node and a second node; and a protection circuit electrically connected between the first node and the second node. The protection circuit is configured to protect the internal circuit from transient electrical overstress events while maintaining a relatively high holding voltage upon activation. The holes—or electrons—enhanced conduction protection circuit includes a bi-directional bipolar device having an emitter/collector, a base, and a collector/emitter; a first bipolar transistor having an emitter electrically coupled to the first node, a base electrically coupled to the emitter/collector of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor; and a second bipolar transistor having an emitter electrically coupled to the second node, a base electrically coupled to the collector/emitter of the bipolar device, and a collector electrically coupled to the base of the bipolar transistor. | 2012-08-09 |
20120199875 | CASCODE SCHEME FOR IMPROVED DEVICE SWITCHING BEHAVIOR - A switching device includes a low voltage normally-off transistor and a control circuit built into a common die. The device includes source, gate and drain electrodes for the transistor and one or more auxiliary electrodes. The drain electrode is on one surface of a die on which the transistor is formed, while each of the remaining electrodes is located on an opposite surface. The one or more auxiliary electrodes provide electrical contact to the control circuit, which is electrically connected to one or more of the other electrodes. | 2012-08-09 |
20120199876 | Defect Reduction Using Aspect Ratio Trapping - Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls. | 2012-08-09 |
20120199877 | MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION - Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can provide increased gate induced drain leakage during an erase operation. Configurations shown can provide a reliable bias to a body region for memory operations such as erasing, and containment of charge in the body region during a boost operation. | 2012-08-09 |
20120199878 | Drain Extended Field Effect Transistors and Methods of Formation Thereof - In an embodiment of the invention, a semiconductor device includes a first region having a first doping type, a channel region having the first doping type disposed in the first region, and a retrograde well having a second doping type. The second doping type is opposite to the first doping type. The retrograde well has a shallower layer with a first peak doping and a deeper layer with a second peak doping higher than the first peak doping. The device further includes a drain region having the second doping type over the retrograde well. An extended drain region is disposed in the retrograde well, and couples the channel region with the drain region. An isolation region is disposed between a gate overlap region of the extended drain region and the drain region. A length of the drain region is greater than a depth of the isolation region. | 2012-08-09 |
20120199879 | METHOD OF FORMING AN INVERTED T SHAPED CHANNEL STRUCTURE FOR AN INVERTED T CHANNEL FIELD EFFECT TRANSISTOR DEVICE - A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. | 2012-08-09 |
20120199880 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - In order to solve a problem that, in an initial stage of film growth in a plasma CVD method, it is difficult to form a silicon layer which is excellent in crystallinity, provided is a semiconductor device, including: a substrate; a crystalline silicon layer; a titanium oxide layer containing titanium oxide as a main component; and a pair of electrodes electrically connected to the crystalline silicon layer, in which: the titanium oxide layer and the crystalline silicon layer are formed on the substrate in the mentioned order from the substrate side; and the titanium oxide layer and the crystalline silicon layer are formed in contact to each other. | 2012-08-09 |
20120199881 | BIPOLAR TRANSISTOR AND METHOD WITH RECESSED BASE ELECTRODE - High frequency performance of (e.g., silicon) bipolar devices ( | 2012-08-09 |
20120199882 | Image Sensors Including A Gate Electrode Surrounding A Floating Diffusion Region - Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region. | 2012-08-09 |
20120199883 | SOLID-STATE IMAGE PICKUP DEVICE - An N-type semiconductor region and a floating diffusion region are disposed in an active region. A transfer gate electrode for transferring charges from a PD to an FD is disposed on a semiconductor substrate through an insulator. A part of the N-type semiconductor region constituting the PD and a part of the transfer gate electrode are overlapped with each other. A P-type semiconductor region is disposed in the active region. The P-type semiconductor region and the portion overlapped with the transfer gate electrode of the N-type semiconductor region are disposed adjacent to each other in the direction parallel to the interface of the semiconductor substrate and the insulator. The position of the impurity concentration peak of the N-type semiconductor region and the position of the impurity concentration peak of the P-type semiconductor region are different from each other in depth. | 2012-08-09 |
20120199884 | PH SENSOR, PH MEASUREMENT METHOD, ION SENSOR, AND ION CONCENTRATION MEASUREMENT METHOD - A pH sensor may include a reference electrode including a p-channel field effect transistor (FET) whose gate includes a diamond surface having a hydrogen ion insensitive terminal, and a working electrode. | 2012-08-09 |
20120199885 | Integrated Transistor and Anti-Fuse Programming Element for a High-Voltage Integrated Circuit - A semiconductor device includes an N type well region in a P type substrate. A source region of a MOSFET is laterally separated from a boundary of the well region, which includes the drain of the MOSFET. An insulated gate of the MOSFET extends laterally from the source region to at least just past the boundary of the well region. A polysilicon layer, which forms a first plate of a capacitive anti-fuse, is insulated from an area of the well region, which forms the second plate of the anti-fuse. The anti-fuse is programmed by application of a voltage across the first and second capacitive plates sufficient to destroy at least a portion of the second dielectric layer, thereby electrically shorting the polysilicon layer to the drain of the HVFET. | 2012-08-09 |
20120199886 | SEALED AIR GAP FOR SEMICONDUCTOR CHIP - A semiconductor chip, including a substrate; a dielectric layer over the substrate; a gate within the dielectric layer, the gate including a sidewall; a source and a drain in the substrate adjacent to the gate; a tapered contact contacting a portion of one of the source or the drain; and a sealed air gap between the sidewall and the contact. | 2012-08-09 |
20120199887 | METHODS OF CONTROLLING TUNGSTEN FILM PROPERTIES - Methods, apparatus, and systems for depositing tungsten having tailored stress levels are provided. According to various embodiments, the methods involve depositing high stress or low stress tungsten films. In certain embodiments depositing high stress tungsten involves a multi-stage chemical vapor deposition (CVD) process including a low temperature deposition followed by a high temperature deposition. In certain embodiments depositing low stress tungsten involves a CVD process using a relatively low tungsten precursor flow. Also provided are new classes of high and low stress tungsten films, which may also have low resistivity and/or high reflectivity. Also provided are integration methods involving depositing high or low stress tungsten, for example as contacts and/or metal gates, and semiconductor devices incorporating the tungsten films. | 2012-08-09 |
20120199888 | FIN FIELD-EFFECT TRANSISTOR STRUCTURE - A fin field-effect transistor structure includes a silicon substrate, a fin channel, a gate insulator layer and a gate conductor layer. The fin channel is formed on a surface of the silicon substrate, wherein the fin channel has at least one slant surface. The gate insulator layer formed on the slant surface of the fin channel. The gate conductor layer formed on the gate insulator layer. | 2012-08-09 |
20120199889 | SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR - Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased. | 2012-08-09 |
20120199890 | TRANSISTOR STRUCTURE - A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a P-type well, a gate disposed on the P-type well, a first spacer disposed on the gate, an N-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the N-type source/drain region, a second spacer around the first spacer and the second spacer directly on and covering a portion of the silicon cap layer and a silicide layer disposed on the silicon cap layer. | 2012-08-09 |
20120199891 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a gate electrode ( | 2012-08-09 |
20120199892 | Light Signal Transfer Device with Conductive Carbon Line - A light signal transfer device comprises a substrate having a gate dielectric layer; a source and drain doped regions formed in the substrate; a gate formed on the gate dielectric layer; a carbon nano-tube material formed under the gate dielectric layer to act a channel; and a photo-diode doped region formed adjacent to one of the source and drain doped regions, wherein the areas of the channel and the photo-diode doped region are fixed, the carbon nano-tube material reducing area of the channel and increase photo reception area for the photo-diode doped region to improve performance of the light signal transfer device. | 2012-08-09 |
20120199893 | SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member. | 2012-08-09 |
20120199894 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer. | 2012-08-09 |
20120199895 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a spin torque written in-plane magnetization magnetoresistive element, placed over the main surface of a semiconductor substrate, whose magnetization state can be changed according to the direction of a current flow; and a first wiring electrically coupled with the magnetoresistive element and extended toward the direction along the main surface. The aspect ratio of the magnetoresistive element as viewed in a plane is a value other than 1. In a memory cell area where multiple memory cells in which the magnetoresistive element and a switching element are electrically coupled with each other are arranged, the following measure is taken: multiple magnetoresistive elements adjoining to each other in the direction of length of each magnetoresistive element as viewed in a plane are so arranged that they are not on an identical straight line extended in the direction of length. | 2012-08-09 |