34th week of 2015 patent applcation highlights part 59 |
Patent application number | Title | Published |
20150236198 | Group III Nitride Semiconductor Light-Emitting Device And Production Method Therefor - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. A light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a protective layer, and a barrier layer sequentially deposited. The protective layer has a layered structure comprising a second protective layer disposed in contact with and on the well layer, and a first protective layer disposed in contact with and on the second protective layer. The second protective layer is formed of GaN. The first protective layer is formed of AlGaInN. The first protective layer has a bandgap larger than that of the well layer and not larger than that of the barrier layer. Moreover, the first protective layer has an In composition ratio of more than 0% and not more than 4%. | 2015-08-20 |
20150236199 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT - The invention relates to an optoelectronic component ( | 2015-08-20 |
20150236200 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 2015-08-20 |
20150236201 | OPTICAL DEVICE - An optical device and method for fabricating an optical device. The optical device comprising: a semiconductor material comprising an active layer configured to emit light when an electrical current is applied to the device and/or to generate an electrical current when light is incident on the active layer, wherein the semiconductor material comprises a first surface and an opposed second surface, from which light is emitted from and/or received by the device, and wherein the first surface defines a first structure comprising the active layer and configured to reflect light emitted from the active layer toward the second surface and/or to reflect light received by the device toward the active layer, and the second surface defines a second structure configured to permit light incident on the second surface at an angle outside a critical angle range to the planar normal to pass therethrough. | 2015-08-20 |
20150236202 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer. | 2015-08-20 |
20150236203 | LIGHT EMITTING DEVICE PACKAGE, BACKLIGHT UNIT, LIGHTING DEVICE AND ITS MANUFACTURING METHOD - Disclosed are a light emitting device package, a backlight unit, and a lighting device which are usable for a display or lighting, and a method of manufacturing the light emitting device package. The light emitting device package includes: a substrate; a light emitting device seated on the substrate; a reflecting member provided on the substrate and provided with a reflector cup surrounding a lateral circumference of the light emitting device; a transparent encapsulant charged in the reflector cup of the reflecting member in a flow state and hardened, and provided with a concave phosphor accommodating space in an upper surface thereof; and a phosphor charged in the phosphor accommodating space in a flow state and hardened. | 2015-08-20 |
20150236204 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode. | 2015-08-20 |
20150236205 | LIGHT-EMITTING DEVICE - A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side. | 2015-08-20 |
20150236206 | OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip ( | 2015-08-20 |
20150236207 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present disclosure relates to a semiconductor light emitting element. The semiconductor light emitting element has a first conductivity type layer, a light emitting layer, and a second conductivity type layer that are laminated; a first pad electrode provided to the first conductivity type layer; and second pad electrodes provided to the second conductivity type layer. The first pad electrode and the second pad electrode is disposed on the same side of the semiconductor light emitting element. Plan view shape of the semiconductor light emitting element is rectangular. The first pad electrode is disposed in a middle region of three regions of the semiconductor light emitting element. The three regions are defined by dividing the light emitting element into three equal parts in the lengthwise direction of the semiconductor light emitting element. The second pad electrodes are respectively disposed in regions on both sides of the three regions. | 2015-08-20 |
20150236208 | LIGHT-EMITTING DEVICES - A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures. | 2015-08-20 |
20150236209 | Optoelectronic Semiconductor Chip and Method for Production Thereof - An optoelectronic semiconductor chip includes a semiconductor body and a carrier, on which the semiconductor body is arranged. The semiconductor body has a semiconductor layer sequence with an active region provided for generating or receiving radiation, a first semiconductor layer and a second semiconductor layer. The active region is arranged between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is arranged on the side of the active region facing away from the carrier. A trench structure, extends through the second semiconductor layer and the active region into the first semiconductor layer. An electrical contact structure with a plurality of contact strips is formed between the carrier and the semiconductor body. The contact strips in the trench structure are connected in an electrically conductive manner to the first semiconductor layer. | 2015-08-20 |
20150236210 | LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD - Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer, a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area. | 2015-08-20 |
20150236211 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 2015-08-20 |
20150236212 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light. | 2015-08-20 |
20150236213 | INDEX MATCHED COMPOSITE MATERIALS AND LIGHT SOURCES INCORPORATING THE SAME - Disclosed are composites that include a matrix and at least one filler. The matrix may be a core-shell particle assembly that includes an inorganic core and a polymeric shell. The refractive index of the core may be adjusted by adjusting the volume fraction of the core, such that the refractive index of the core-shell particle assembly matches or substantially matches the refractive index of the filler. Optically transparent composites that exhibit properties of the filler may therefore be achieved. Methods of making such composites and light sources including such composites are also disclosed. | 2015-08-20 |
20150236214 | ELECTRONIC DEVICES WITH YIELDING SUBSTRATES - In accordance with certain embodiments, a semiconductor die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the semiconductor die or non-coplanarity of the semiconductor die contacts. | 2015-08-20 |
20150236215 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers. | 2015-08-20 |
20150236216 | LIGHT EMITTING DIODE - Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors. | 2015-08-20 |
20150236217 | LIGHT EMITTING APPARATUS - Disclosed is a light emitting apparatus which includes at least one light emitting device; a substrate under the light emitting device; a bonding member between the light emitting device and the substrate; and an adhesion member under the substrate, wherein the adhesion member includes at least one of benzotriazole and hydroxy group. | 2015-08-20 |
20150236218 | LED MODULE - An LED module includes: an LED chip; and a resin case having a reflective surface surrounding the LED chip. An area contact inhibitor to inhibit area contact with an adjacent LED module is formed on an outer surface of the resin case. | 2015-08-20 |
20150236219 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR FABRICATING SAME - An LED package comprising a submount having a top and bottom surface with a plurality of top electrically and thermally conductive elements on its top surface. An LED is included on one of the top elements such that an electrical signal applied to the top elements causes the LED to emit light. The electrically conductive elements also spread heat from the LED across the majority of the submount top surface. A bottom thermally conductive element is included on the bottom surface of said submount and spreads heat from the submount, and a lens is formed directly over the LED. A method for fabricating LED packages comprising providing a submount panel sized to be separated into a plurality of LED package submounts. Top conductive elements are formed on one surface of the submount panel for a plurality of LED packages, and LEDs are attached to the top elements. Lenses are molded over the LEDs and the substrate panel is singulated to separate it into a plurality of LED packages. | 2015-08-20 |
20150236220 | Small Water-soluble Quantum Dots - Water-soluble, stable fluorescent PEGylated alkanethiol-coated quantum dots are made by contacting quantum dots with PEGylated alkanethiol in a non-oxidative, water-immiscible organic reaction solvent under a non-oxidative gas, wherein the reaction solvent is in contact with an aqueous phase, at elevated temperature and time sufficient to coat the dots with the PEGylated alkanethiol, wherein resultant water-soluble, stable fluorescent PEGylated alkanethiol-coated dots enter the aqueous phase. | 2015-08-20 |
20150236221 | GAUUSIAN SURFACE LENS QUANTUM PHOTON CONVERTER AND METHODS OF CONTROLLING LED COLOUR AND INTENSITY - This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion. Utilizing the invention's methodology, the white resultant colour temperature is stabilized against internal semiconductor thermal fluctuations or ambient thermal variations. | 2015-08-20 |
20150236222 | Semiconductor Structure having Nanocrystalline Core and Nanocrystalline Shell with Insulator Coating - Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material and having an aspect ratio between, but not including, 1.0 and 2.0. The semiconductor structure also includes a nanocrystalline shell composed of a second, different, semiconductor material at least partially surrounding the anisotropic nanocrystalline core. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core. | 2015-08-20 |
20150236223 | OPTOELECTRONIC COMPONENT - A method of producing an optoelectronic component includes providing at least one optoelectronic semiconductor chip; arranging a starting layer on the semiconductor chip, wherein the starting layer is present in the form of a film and includes a first phosphor; arranging a conversion element on the starting layer, wherein the conversion element includes a second phosphor; and curing the starting layer to form a connection layer. | 2015-08-20 |
20150236224 | LIGHT EMITTING DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME - Provided are a light emitting device package and a method of fabricating the same. The package includes a package body including a lead frame, a light emitting device mounted on the package body, a bonding wire configured to electrically connect an electrode formed on a top surface of the light emitting device with the lead frame, a phosphor sheet attached on the light emitting device, and a phosphor molding portion to cover the light emitting device and the phosphor sheet. | 2015-08-20 |
20150236225 | LED LAMPS WITH IMPROVED QUALITY OF LIGHT - LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm. | 2015-08-20 |
20150236226 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - The light emitting element of the embodiment includes an anode; a cathode; a visible light emitting layer provided between the anode and the cathode and emitting visible light; and a carrier trapping layer containing a thiadiazole based compound represented by the following formula (1). | 2015-08-20 |
20150236227 | LED PACKAGE HAVING MUSHROOM-SHAPED LENS WITH VOLUME DIFFUSER - According to some embodiments of the invention, a light-emitting device package includes a body including top and bottom surfaces and a cavity in the body, the cavity extending from the top surface towards the bottom surface and having a floor. The light-emitting device package also includes a plurality of LED (light-emitting-diode) dies disposed on the floor of the cavity. A socket is formed over the plurality of LED dies. The socket includes a top surface, a socket sidewall, and a bottom surface, the socket sidewall disposed between the top surface and the bottom surface of the socket. A lens is disposed over the over the socket. The lens includes two or more optical materials with different indices of refraction. The lens includes a cap and a plug. The cap has an upper surface and a lower surface, and the plug has a lower surface and a plug sidewall between the lower surface of the plug and the lower surface of the cap. | 2015-08-20 |
20150236228 | LIGHT-EMITTING DIODE PACKAGE - A light-emitting diode package includes a light-emitting structure, a first electrode pad and a second electrode pad connected with the light-emitting structure, an insulating pattern layer in contact with a bottom surface of the light-emitting structure and abutting the first and second electrode pads, a substrate including via-holes in contact with a bottom surface of the insulating pattern layer and exposing a portion of the first electrode pad and a portion of the second electrode pad, a first penetrating electrode and a second penetrating electrode that are disposed in the via-holes and respectively connected with the first and second electrode pads, a fluorescent material layer disposed on the light-emitting structure, a glass disposed on and spaced apart from the light-emitting structure with the fluorescent material layer therebetween. | 2015-08-20 |
20150236229 | LUMINOUS DEVICES, PACKAGES AND SYSTEMS CONTAINING THE SAME, AND FABRICATING METHODS THEREOF - The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous devices are designed to maximize light emitting efficiency and/or thermal dissipation. Other improvements include an embedded zener diode to protect against harmful reverse bias voltages. | 2015-08-20 |
20150236230 | LIGHT-EMITTING DEVICE AND PROCESS FOR MANUFACTURING THE SAME - A light-emitting device includes a support including a substrate, a pair of electrodes and an insulating reflective member, the pair of electrodes being disposed on an upper surface of the substrate, and the reflective member being disposed on the substrate, a light-emitting element flip-chip mounted on the pair of electrodes, and a resin member disposed at least between the light-emitting element and the reflective member, the resin member including a conductive substance which electrically connects the light-emitting element to the pair of electrodes, the reflective member being disposed at least over an entirety of a surface that is located immediately below the resin member. | 2015-08-20 |
20150236231 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region. | 2015-08-20 |
20150236232 | LED PACKAGE - According to a first aspect there is provided a light emitting diode (LED) package. The LED package comprises a heat spreader having a first side and a second side, the first side having a planar surface and the second side being asymmetrical relative to the first side. One or more LED die are mounted on a surface of the second side of the heat spreader. In particular, the surface of the second side of the heat spreader can be shaped or angled relative to the planar surface the surface of the first side. | 2015-08-20 |
20150236233 | ELECTRONIC COMPONENT PACKAGE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing an electronic component package comprises: (i) preparing a metal foil having opposed principal surface “A” for placement of an electronic component and principal surface “B”, and a through-hole located in an electronic component-placement region of the principal surface “A”; (ii) placing the electronic component on the metal foil such that the electronic component is positioned in the electronic component-placement region, and an opening of the through-hole is capped with an electrode of the electronic component; (iii) forming a sealing resin layer on the principal surface “A” such that the electronic component is covered with the sealing resin layer; and (iv) forming a metal plating layer on the principal surface “B”. A dry plating process and a subsequent wet plating process are performed to form the metal plating layer in the (iv) such that the through-hole is filled with the metal plating layer, and the metal foil and the metal plating layer are integrated with each other. | 2015-08-20 |
20150236234 | ELECTRONIC PLATFORM COMPRISING AN ABO3 TYPE CRYSTAL AND GRAPHENE, METHOD FOR ITS MANUFACTURE AND CHIP COMPRISING THE SAME - An electronic platform comprising a substrate made of a ABO3 crystal ( | 2015-08-20 |
20150236235 | SYSTEMS AND METHODS FOR FABRICATION OF SUPERCONDUCTING CIRCUITS - In one aspect, fabricating a superconductive integrated circuit with a Josephson junction includes applying oxygen or nitrogen to at least part of a structure formed from an outer superconductive layer to passivate an artifact, if any, left from removing the portion of the outer superconductive layer. In another aspect, a first superconductive layer is deposited, a second superconductive layer is deposited on the first superconductive layer, an oxide layer is formed on the first superconductive layer, a dielectric layer is deposited on the oxide layer, a portion of the dielectric layer is removed, a first portion of the oxide layer is removed, a second oxide portion is formed in place of the first portion of the oxide layer, and a third superconductive layer is deposited on the dielectric layer and the second oxide portion. | 2015-08-20 |
20150236236 | ULTRASOUND WAVE GENERATING APPARATUS - In one embodiment, there is provided in an ultrasound wave generating apparatus a low output impedance transistor based driver circuit that has the ability to apply a drive signal at a frequency corresponding to an ultrasound transducer's resonant frequency. The low output impedance of the driver circuit allows for a substantial portion of the energy to be delivered to the ultrasound transducer and converted to ultrasound energy. The power transfer efficiency of the presented circuit allows ultrasound drivers to be powered by portable battery packs, while still delivering high ultrasound acoustic power. The ultrasound driver can provide energy in sufficient amounts making it suitable for a range of ultrasound driving applications including but not limited to therapeutic low and high power clinical systems, high intensity focused ultrasound HIFU, acoustical welding, industrial inspection, and other various forms of low-to-high power acoustic devices. | 2015-08-20 |
20150236237 | ELASTIC WAVE DEVICE MANUFACTURING METHOD AND ELASTIC WAVE DEVICE - Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard. | 2015-08-20 |
20150236238 | ELASTIC WAVE ELEMENT AND LADDER FILTER USING SAME - Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring. | 2015-08-20 |
20150236239 | ACTUATOR DEVICE - Actuator device has a main body with base and superstructure bodies, the device having a plurality of actuators formed from a piezoelectric or electrostrictive material and each extend from the base body and form the superstructure body. The actuators each have at least two inner actuating electrodes of which at least one first inner actuating electrode extends, in a positive depthwise direction from the front side up to a distance from the rear side, and of which at least one second inner actuating electrode extends in a negative depthwise direction from the rear side up to a distance from the front side. At least one first inner actuating electrode of each actuator is provided for electrical connection to a first connection pole of an actuating device, a rear-side layer which is formed from electrically conductive material arranged on the rear side of the actuator device. | 2015-08-20 |
20150236240 | PIEZOELECTRIC VIBRATION ACTUATOR AND METHOD OF MANUFACTURING THE SAME - Embodiments of the invention provide a piezoelectric vibration actuator and a method of manufacturing the same. According to at least one embodiment, the piezoelectric vibration actuator includes a case having an internal space partitioned into a top wall, a right side wall, a bottom wall, and a left side wall and having opened one side wall, and a driving part coupled to the case and linearly translated toward the top wall and the bottom wall in the internal space of the case. | 2015-08-20 |
20150236241 | VIBRATION GENERATING APPARATUS - There is provided a vibration generating apparatus including: an elastic member having both end portions thereof fixedly installed on a support part of a lower case; a piezoelectric element installed on one surface of the elastic member; and a mass body part connected to the elastic member to increase an amount of vibrations, wherein the mass body part is provided with protrusion portions for first contacting the lower case at the time of an external impact. | 2015-08-20 |
20150236242 | SINGLE-CRYSTAL PIEZOELECTRIC FIBER COMPOSITE AND MAGNETOELECTRIC LAMINATE COMPOSITE INCLUDING THE SAME - A piezoelectric fiber composite and a magnetoelectric laminate composite including the same are disclosed. The piezoelectric fiber composite includes a first protective layer having a first electrode, a second protective layer having a second electrode, and a piezoelectric fiber layer formed between the first and the second electrode and having piezoelectric fibers arranged in the longitudinal direction of the composite, wherein the piezoelectric fibers include a single-crystal piezoelectric material and are configured such that a <011> direction of the single crystal is identical to a thickness direction of the composite and a <001> direction of the single crystal is identical to a longitudinal direction of the composite, thus exhibiting superior piezoelectric strain properties and sensing properties. Also, the magnetoelectric laminate composite includes the piezoelectric fiber composite and a magnetostrictive layer including a magnetostrictive material such as nickel (Ni) or Metglas (FeBSi alloy), thus ensuring significantly improved magnetoelectric properties. | 2015-08-20 |
20150236243 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND SENSOR - A piezoelectric element | 2015-08-20 |
20150236244 | FERROELECTRIC CERAMICS AND MANUFACTURING METHOD THEREOF - To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO | 2015-08-20 |
20150236245 | SEMICONDUCTOR PACKAGE AND METHOD THEREOF - A semiconductor package and manufacturing method thereof are disclosed. The semiconductor package includes a package carrier, a chip, a film, a first shielding metal plate and an encapsulating material. The package carrier has at least one conductive component. The chip has an active surface and a corresponding back surface. The back surface of the chip is attached to the package carrier. At least one contact point is disposed on the active surface and is electrically coupled to the conductive component by a wire. The film is disposed on the active surface and covers a portion of the wire. The first shielding metal plate is disposed on the film. The encapsulating material covers the chip, the wire, at least one portion of the package carrier, the film and at least one portion of the first shielding metal plate. | 2015-08-20 |
20150236246 | THERMOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A thermoelectric conversion element includes a magnetic layer which has a component magnetized in an in-plane direction, an electromotive layer which includes a material with spin orbit coupling, and a spin injection layer. The spin injection layer is provided between the magnetic layer and the electromotive layer and magnetically coupled to both the magnetic layer and the electromotive layer. A magnetic moment per unit volume of the spin injection layer is smaller than the magnetic moment per unit volume of the magnetic layer. | 2015-08-20 |
20150236247 | NON-VOLATILE SPIN SWITCH - A circuit element includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity. | 2015-08-20 |
20150236248 | TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME - A two-step etching process is used to form the top electrode for a magnetoresistive device. The level of isotropy is different for each of the two etching steps, thereby providing advantages associated with isotropic etching as well as more anisotropic etching. The level of isotropy is controlled by varying power and pressure during plasma etching operations. | 2015-08-20 |
20150236249 | NON-REACTIVE PHOTORESIST REMOVAL AND SPACER LAYER OPTIMIZATION IN A MAGNETORESISTIVE DEVICE - In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device. | 2015-08-20 |
20150236250 | TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME - A two-step etching process is used to form the top electrode for a magnetoresistive device. The etching chemistries are different for each of the two etching steps. The first chemistry used to etch the top portion of the electrode is more selective with respect to the conductive material of the top electrode, thereby reducing unwanted erosion of the photoresist and hard mask layers. The second chemistry is less corrosive than the first chemistry and does not damage the layers underlying the top electrode, such as those included in the magnetic tunnel junction. | 2015-08-20 |
20150236251 | METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE - In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures. Each MTJ structure includes a sequentially stacked first magnetic layer pattern, tunnel layer pattern, and second magnetic layer pattern, and each of the MTJ structures contacts a corresponding one of the lower electrodes. | 2015-08-20 |
20150236252 | SPIN TRANSFER TORQUE CELL FOR MAGNETIC RANDOM ACCESS MEMORY - Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via. | 2015-08-20 |
20150236253 | Magnetoresistive Structure having a Metal Oxide Tunnel Barrier and Method of Manufacturing Same - In one aspect, the present inventions are directed to a magnetoresistive structure having a tunnel junction, and a process for manufacturing such a structure. The tunnel barrier may be formed between a free layer and a fixed layer in a plurality of repeating process of depositing a metal material and oxidizing at least a portion of the metal material. Where the tunnel barrier is formed by deposition of at least three metal materials interceded by an associated oxidization thereof, the oxidation dose associated with the second metal material may be greater than the oxidation doses associated with the first and third metal materials. In certain embodiments, the fixed layer may include a discontinuous layer of a metal, for example, Ta, in the fixed layer between two layers of a ferromagnetic material. | 2015-08-20 |
20150236254 | Method of Integration of a Magnetoresistive Structure - A conductive via disposed beneath a magnetic device and aligned therewith. In certain embodiments, an electrode formed on the conductive via may be polished to eliminate step functions or seams originating at the conductive via from propagating up through the various deposited layers. This integration approach allows for improved scaling of the MRAM devices to, for example, a 45 nanometer node. | 2015-08-20 |
20150236255 | Resistive Memory Cell having a Reduced Conductive Path Area - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM, may include forming a bottom electrode layer, forming an oxide region of an exposed area of the bottom electrode, removing a region of the bottom electrode layer proximate the oxide region to form a bottom electrode having a pointed tip or edge region, and forming first and second electrolyte regions and first and second top electrodes over the bottom electrode to define distinct first and second memory elements. The first memory element defines a first conductive filament/vacancy chain path from the first portion of the bottom electrode pointed tip region to the first top electrode via the first electrolyte region, and second memory element defines a second conductive filament/vacancy chain path from the second portion of the bottom electrode pointed tip region to the second top electrode via the second electrolyte region. | 2015-08-20 |
20150236256 | Resistive Memory Cell with Sloped Bottom Electrode - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include: forming a plurality of bottom electrode connections, depositing a bottom electrode layer over the bottom electrode connections, performing a first etch to remove portions of the bottom electrode layer such that the remaining bottom electrode layer defines at least one sloped surface, forming an oxidation layer on each sloped surface of the remaining bottom electrode layer, performing a second etch on the remaining bottom electrode layer and oxidation layer on each sloped surface to define at least one upwardly-pointing bottom electrode region above each bottom electrode connection, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region and a top electrode over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top. | 2015-08-20 |
20150236257 | Resistive Memory Cell with Sloped Bottom Electrode - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include forming a plurality of bottom electrode connections, depositing a bottom electrode layer over the bottom electrode connections, performing an etch to remove portions of the bottom electrode layer to form at least one upwardly-pointing bottom electrode region above the bottom electrode connections, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region and a top electrode over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top. | 2015-08-20 |
20150236258 | RESISTIVE MEMORY CELL HAVING A REDUCED CONDUCTIVE PATH AREA - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM, may include forming a bottom electrode layer, oxidizing an exposed region of the bottom electrode layer to form an oxide region, removing a region of the bottom electrode layer proximate the oxide region, thereby forming a bottom electrode having a pointed tip region adjacent the oxide region, and forming an electrolyte region and top electrode over at least a portion of the bottom electrode and oxide region, such that the electrolyte region is arranged between the pointed tip region of the bottom electrode and the top electrode, and provides a path for conductive filament or vacancy chain formation from the pointed tip region of the bottom electrode to the top electrode when a voltage bias is applied to the memory cell. A memory cell and memory cell array formed by such method are also disclosed. | 2015-08-20 |
20150236259 | Switching Components and Memory Units - Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior. | 2015-08-20 |
20150236260 | Creating An Embedded ReRam Memory From A High-K Metal Gate Transistor Structure - An embodiment of the present invention sets forth an embedded resistive memory cell that includes a first stack of deposited layers, a second stack of deposited layers, a first electrode disposed under a first portion of the first stack, and a second electrode disposed under a second portion of the first stack and extending from under the second portion of the first stack to under the second stack. The second electrode is disposed proximate to the first electrode within the embedded resistive memory cell. The first stack of deposited layers includes a dielectric layer, a high-k dielectric layer disposed above the dielectric layer, and a metal layer disposed above the high-k dielectric layer. The second stack of deposited layers includes a high-k dielectric layer formed simultaneously with the high-k dielectric layer included in the first stack, and a metal layer disposed above the high-k dielectric layer. | 2015-08-20 |
20150236261 | MATERIALS FOR ELECTRONIC DEVICES - The invention relates to a mixture containing at least two different triaryl amino compounds of formula (I). The mixture is suitable for use in an electronic device, preferably in an organic electroluminescent device, and in particular for use as a hole transport layer. | 2015-08-20 |
20150236262 | ORGANIC LIGHT-EMITTING DEVICES - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer including an emission layer between the first electrode and the second electrode. The emission layer includes at least one compound selected from carbazole-based compounds, and at least one compound selected from heterocyclic compounds as described in the detailed description. | 2015-08-20 |
20150236263 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE PANEL USING ROLL-TO-ROLL METHOD - An organic electroluminescence panel is produced using a roll-to-roll method. The method includes an element forming step of forming an organic electroluminescence element on a flexible substrate, a protective layer forming step of forming a protective layer on the organic electroluminescence element, and a sealing step of bonding a sealing film onto the protective layer, wherein the element forming step, the protective layer forming step and the sealing step are carried out successively in a vacuum chamber without winding the substrate in the form of a roll. By using such the production method, an organic electroluminescence panel having excellent durability can be produced. | 2015-08-20 |
20150236264 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, and an emission layer disposed between the first electrode and the second electrode; an electron transport region disposed between the emission layer and the second electrode; and a hole transport region disposed between the first electrode and the emission layer, wherein the electron transport region comprises at least one of an electron transport material represented by Formula 1 below; and the hole transport region comprises at least one of a hole transport material represented by Formula 2 or 3 below: | 2015-08-20 |
20150236265 | INDENE-BASED COMPOUNDS AND ORGANIC LIGHT-EMITTING DEVICES COMPRISING THE SAME - An indene-based compound and an organic light-emitting device including the same, the compound being represented by Formula 1: | 2015-08-20 |
20150236266 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device (OLED) includes a first electrode; a second electrode facing the first electrode; an emission layer (EML) between the first electrode and the second electrode; a hole transport region between the first electrode and the EML; an electron transport region between the EML and the second electrode; and an interlayer between the EML and the hole transport region, wherein the interlayer includes an amine-based compound represented by Formula 1 or 2: | 2015-08-20 |
20150236267 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence (EL) device including an anode; an emission layer for obtaining luminescence via a singlet excited state; and a laminated structure between the anode and the emission layer, the laminated structure including at least three layers having different components. | 2015-08-20 |
20150236268 | ORGANIC MATERIALS FOR ORGANIC LIGHT EMITTING DEVICES - Novel diarylamino phenyl carbazole compounds are provided. By appropriately selecting the nature of the diarylamino substituent and the substitution on the carbazole nitrogen, compounds with appropriate HOMO and LUMO energies can be obtained for use as materials in a secondary hole transport layer. | 2015-08-20 |
20150236269 | ORGANIC SEMICONDUCTOR SOLUTION AND ORGANIC SEMICONDUCTOR FILM - The present invention provides an organic semiconductor solution that can produce an organic semiconductor film having acceptable semiconductor properties while endowed with improved film-forming properties due to substantial polymer content. This organic semiconductor solution contains an organic solvent as well as a polymer and an organic semiconductor precursor dissolved in the organic solvent. The proportion of the polymer in relation to the total of the polymer and the organic semiconductor precursor is equal to or greater than 3 mass %. The organic semiconductor precursor has a structure in which a dienophile-type alkene is eliminably bonded through a double bond thereof to the benzene ring of an organic semiconductor compound represented by formula I) (where A | 2015-08-20 |
20150236270 | ORGANIC SEMICONDUCTOR MATERIAL - Compounds useful as organic semiconductor materials, and semiconductor devices containing such organic semiconductor materials are described. | 2015-08-20 |
20150236271 | NOVEL COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING SAME - The present invention relates to a novel compound and an organic electroluminescence device including the same, and the compound according to the present invention may be used in an organic material layer, preferably a light-emitting layer of an organic electroluminescence device, thereby enhancing the light-emitting efficiency, driving voltage, lifespan, and the like of the organic electroluminescence device. | 2015-08-20 |
20150236272 | NOVEL COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE INCLUDING THESAME - The present invention relates to a novel indole-based compound having excellent hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescence device which includes the indole-based compound in one or more organic material layers thereof so as to improve characteristics such as light-emitting efficiency, driving voltage, and lifespan. | 2015-08-20 |
20150236273 | FLUORANTHENE COMPOUND, AND ORGANIC ELECTRONIC DEVICE COMPRISING SAME - The present specification provides a novel fluoranthene compound significantly improving the life span, efficiency, electrical and chemical stability and thermal stability of an organic electronic device, and an organic electronic device that contains the compound in an organic compound layer. | 2015-08-20 |
20150236274 | POLYCYCLIC AROMATIC COMPOUND - A novel polycyclic aromatic compound in which plural aromatic rings are linked via boron atoms, oxygen atoms and the like is provided, and therefore, the range of selection of the material for organic electroluminescent elements can be widened. Also, an excellent organic electroluminescent element is provided by using the novel polycyclic aromatic compound as a material for an organic electroluminescent element. | 2015-08-20 |
20150236275 | Phosphorescent Compound and Organic Electroluminescent Device Using the Same - A phosphorescent compound is represented by following Formula: | 2015-08-20 |
20150236276 | Organic Electroluminescent Materials and Devices - The present invention relates to metal complexes having novel ligands. The compounds are useful in organic light emitting devices (OLEDs), particularly as emitting dopants. The incorporation of these novel ligands provides red phosphorescent materials with good external quantum efficiency, good color, and long lifetime. | 2015-08-20 |
20150236277 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Compounds having the formula M(L | 2015-08-20 |
20150236278 | BLUE LUMINESCENT COMPOUNDS - There is provided a compound having Formula II | 2015-08-20 |
20150236279 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A compound having a structure of Formula M(L | 2015-08-20 |
20150236280 | LIGHT-EMITTING DEVICE AND PEELING METHOD - A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C. | 2015-08-20 |
20150236281 | INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: | 2015-08-20 |
20150236282 | HYBRID JUNCTION FIELD-EFFECT TRANSISTOR AND ACTIVE MATRIX STRUCTURE - Junction field-effect transistors including inorganic channels and organic gate junctions are used in some applications for forming high resolution active matrix displays. Arrays of such junction field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes. | 2015-08-20 |
20150236283 | AMBIPOLAR SYNAPTIC DEVICES - Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices. | 2015-08-20 |
20150236284 | JUNCTION FIELD-EFFECT QUANTUM DOT MEMORY SWITCH - A dense binary memory switch device combines the function of a pass transistor and a memory cell and has low programming and operation voltages. The device includes a charge storage region coupled to a gate electrode through a gate dielectric layer and directly contacting a channel region. The charge storage region contains quantum structures, deep traps or combinations thereof and is charged by carriers injected from injection regions that are in direct contact with the charge storage region. Fabrication of the device at low temperatures compatible with back-end-of-line processing is further disclosed. | 2015-08-20 |
20150236285 | AMBIPOLAR SYNAPTIC DEVICES - Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices. | 2015-08-20 |
20150236286 | ELECTRONIC DEVICE PACKAGE AND MANUFACTURING METHOD THEREOF - An electronic device package of the disclosure includes a gas barrier substrate, a base layer, an electronic device and a barrier film. The base layer is disposed on the gas barrier substrate and made of a light curing material. The electronic device is disposed on the base layer. The barrier film is disposed on the gas barrier substrate, in which the barrier film and the gas barrier substrate clad the electronic device and the base layer. The disclosure also provides a manufacturing method of an electronic device package. | 2015-08-20 |
20150236287 | EXCITONIC ENERGY TRANSFER TO INCREASE INORGANIC SOLAR CELL EFFICIENCY - The present disclosure relates to a photosensitive optoelectronic device comprising two electrodes, an inorganic subcell positioned between the two electrodes, wherein the inorganic subcell comprises at least one inorganic semiconductor material having a band gap energy (E | 2015-08-20 |
20150236288 | POLYMER, ORGANIC THIN-FILM SOLAR CELL USING THE SAME, AND ELECTRONIC PRODUCT COMPRISING THE CELL - [Object] To provide a polymer excellent enough in photoelectric conversion efficiency and in light resistance to be suitable for solar cells, also to provide a solar cell using the polymer, and further to provide an electronic product comprising the cell. | 2015-08-20 |
20150236289 | ELECTRO-OPTICAL COMPONENT HAVING A QUANTUM DOT STRUCTURE - The invention makes use of the effect of two-photon polymerization to embed a quantum dot structure in an electro-optical component. The electro-optical component can be a polymer component, LED, OLED, LEC, or graphene component, for example. The efficiency and characteristics of the components are improved or influenced. The quantum dot structure can emit light, convert light from other layers of the component, or influence the conductivity in the component, for example. | 2015-08-20 |
20150236290 | BLUE LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - A blue light emitting device includes an electrode layer, a first metal layer, a second metal layer formed between the electrode layer and the first metal layer, and an organic material layer formed between the first metal layer and the second metal layer and including a blue shift light emitting sub-layer. A peak of a first light-emitting spectrum of the blue shift light emitting sub-layer, which ranges within 490-550 nm, is shifted to a peak of a second light-emitting spectrum, which is less than 510 nm, by the surface plasmon coupling between the first metal layer and the second metal layer. A light emitting device is further provided, which is sequentially stacked with a first metal layer, an organic material layer having a blue shift light emitting sub-layer, a second metal layer having a metal portion and an opening portion, an electrode layer, and a light emitting layer doped with a dopant material, to emit white light. | 2015-08-20 |
20150236291 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic EL display device includes an organic EL element having a first light-emitting portion, a second light-emitting portion, an n-type charge-generation layer, and a p-type charge-generation layer. The first light-emitting portion has a first light-emitting layer and a hole-injection layer. The first light-emitting layer is formed between an anode and a cathode. The hole-injection layer is made of amorphous carbon and in contact with the anode. The second light-emitting portion has a second light-emitting layer, which is formed between the first light-emitting portion and the cathode. The n-type charge-generation layer is formed between the first and second light-emitting portions. The n-type charge-generation layer is in contact with the first light-emitting portion. The p-type charge-generation layer is made of amorphous carbon and formed between the n-type charge-generation layer and the second light-emitting portion. The p-type charge-generation layer is in contact with the second light-emitting portion. | 2015-08-20 |
20150236292 | ORGANIC ELECTROLUMINESCENT ELEMENT AND ILLUMINATING APPARATUS - An organic electroluminescent element includes: a substrate; an organic light emitter including a first electrode, an organic light-emitting layer, and a second electrode; and a sealing member covering the organic light emitter. The first electrode, the organic light-emitting layer and the second electrode are located in this order. An electrode lead-out part is provided on a surface of an end of the substrate. The electrode lead-out part is externally led out from the sealing member. A wiring board is provided on an opposite side of the sealing member from the substrate. The wiring board has a surface which a wiring connecting electrode is in. The wiring board includes an external electrode pad electrically connected to the wiring connecting electrode. The wiring connecting electrode and the electrode lead-out part are electrically connected to each other by a coating-type conductive material. | 2015-08-20 |
20150236293 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes a first substrate, a second substrate opposing the first substrate, a plurality of organic light emitting diodes disposed on the first substrate, a protection layer covering the organic light emitting diodes, an inner filling layer disposed between the protection layer and the second substrate, the inner filling layer including a hardened monomer material, and a sealing member located between the first substrate and the second substrate to seal between the first substrate and the second substrate, the sealing member enclosing the organic light emitting diodes, the protection layer, and the inner filling layer. | 2015-08-20 |
20150236294 | Organic optoelectronic component, method for producing an organic optoelectronic component and method for cohesive electrical contacting - An organic optoelectronic component may include at least one contact pad with a first electrical contact region and a second electrical contact region. The first electrical contact region and the second electrical contact region are electrically connected to the contact pad. The second electrical contact region is designed in such a way that it has a higher adhesion than the first electrical contact region in respect of a cohesive connection means with the contact pad. The contact pad is designed in such a way that the first electrical contact region is free of cohesive connection means. | 2015-08-20 |
20150236295 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - In an aspect, an organic light-emitting display apparatus is provided, including: an insulating layer having a inclined structure; a first electrode disposed on the insulating layer; a selective wavelength transparent layer disposed on the first electrode; a pixel defined layer disposed on the insulating layer and the first electrode and defining an emissive region and a non-emissive region; an organic emissive layer disposed on the first electrode; and a second electrode disposed on the organic emissive layer. | 2015-08-20 |
20150236296 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - Provided is an organic light-emitting display apparatus that includes a substrate; a first electrode on the substrate; an intermediate layer on the first electrode and including an organic emission layer; and a second electrode that includes a first layer including a dipole material, a second layer including a material having a work function of 3.6 eV or less, and a third layer including a conductive material, wherein the first to third layers are sequentially disposed on the intermediate layer. | 2015-08-20 |
20150236297 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a first substrate, a display unit defining an active area on the first substrate and including an insulating layer, a second substrate on the display unit, one or more signal lines outside the active area and on the insulating layer, and a sealant between the first substrate and the second substrate. The sealant bonds the first substrate and the second substrate, and covers at least a portion of the signal lines. | 2015-08-20 |