34th week of 2014 patent applcation highlights part 17 |
Patent application number | Title | Published |
20140231717 | COMPOUND - The present invention provides a compound that has high solubility in a highly polar solvent and is usefully usable for an application method using a highly polar solvent, the compound that can manufacture an electroluminescent device having high light-emitting efficiency. Specifically, the present invention provides a compound containing a structure represented by Formula (1): | 2014-08-21 |
20140231718 | Process for Producing Highly conducting and Transparent Films From Graphene Oxide-Metal Nanowire Hybrid Materials - A process for producing a transparent conductive film, comprising (a) providing a graphene oxide gel; (b) dispersing metal nanowires in the graphene oxide gel to form a suspension; (c) dispensing and depositing the suspension onto a substrate; and (d) removing the liquid medium to form the film. The film is composed of metal nanowires and graphene oxide with a metal nanowire-to-graphene oxide weight ratio from 1/99 to 99/1, wherein the metal nanowires contain no surface-borne metal oxide or metal compound and the film exhibits an optical transparence no less than 80% and sheet resistance no higher than 300 ohm/square. This film can be used as a transparent conductive electrode in an electro-optic device, such as a photovoltaic or solar cell, light-emitting diode, photo-detector, touch screen, electro-wetting display, liquid crystal display, plasma display, LED display, a TV screen, a computer screen, or a mobile phone screen. | 2014-08-21 |
20140231719 | BINDER FOR BATTERY, AND ANODE AND LITHIUM BATTERY INCLUDING THE SAME - A binder for a battery including polymethyl methacrylate particles and a binder polymer is disclosed. Additionally, a binder composition, and an anode and a lithium battery which include the binder are also disclosed. | 2014-08-21 |
20140231720 | POSITIVE ELECTRODE ACTIVE MATERIAL WITH IMPROVED OUTPUT AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - A mixed positive electrode active material comprising a lithium manganese oxide represented by following [Chemical Formula 1] and a second positive electrode active material represented by following [Chemical Formula 2], and a lithium secondary battery comprising the same are disclosed. | 2014-08-21 |
20140231721 | LITHIUM SILICATE-BASED COMPOUND, POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY USING THE SAME - Provided is a novel lithium silicate-based material useful as a positive electrode material for lithium ion secondary battery. | 2014-08-21 |
20140231722 | CROSSLINKED POLY(ETHER ETHER KETONE) INTERMEDIATE TRANSFER MEMBERS - An intermediate transfer member that includes a crosslinked poly(ether ether ketone) polymer, an optional conductive component, an optional polymer, and an optional release additive. | 2014-08-21 |
20140231723 | ENHANCING SILVER CONDUCTIVITY - A method of enhancing the conductivity of silver in a silver-containing film formed on a substrate is disclosed. A silver-containing film, including silver particles and a hydrophilic binder is produced. Thereafter, the method includes exposing the silver-containing film to hot water vapor so that the binder absorbs water; drying the silver-containing film to remove water in the binder, and repeating the hot water vapor and drying steps at least one additional time to enhance the conductivity of the silver. | 2014-08-21 |
20140231724 | ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY - An active material for a lithium secondary battery includes an amorphous and metastable phase which contains silicon, oxygen, and more than 30 at % and 80 at % or less of carbon. | 2014-08-21 |
20140231725 | DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM - Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. | 2014-08-21 |
20140231726 | METHOD FOR SUPPRESSING COPPER SULFIDE GENERATION IN OIL-FILLED ELECTRICAL EQUIPMENT - The present invention is a method for preventing copper sulfide generation in oil-filled electrical equipment having an inhibitor of copper sulfide generation in insulating oil, and the method is characterized in monitoring characteristics of said insulating oil and performing re-addition of said inhibitor at an appropriate moment in accordance with a result of said monitoring. | 2014-08-21 |
20140231727 | SOLID SOLUTION-BASED NANOCOMPOSITE OPTICAL CERAMIC MATERIALS - A solid solution-based optical material capable of transmitting infrared light, the solid solution-based optical material comprising at least two nano-sized phases intermixed in one another, wherein at least one of the at least two nano-sized phases is a solid solution containing a dissolved dopant, the dissolved dopant present in an amount sufficient to reduce a refractive index difference between the at least two nano-sized phases to about 0.2 or less when infrared light is being transmitted. Various embodiments are directed to related systems and methods. In one embodiment, the infrared light is visible infrared light, short-wave infrared light, eye safe infrared light, medium wave infrared light, long wave infrared red light, or combinations thereof. | 2014-08-21 |
20140231728 | ELECTROPHORETIC FLUID - The present invention is directed to an electrophoretic fluid comprising transparent particles, as an additive. The presence of the transparent particles in the fluid provides improved display performance. | 2014-08-21 |
20140231729 | NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, CURED FILM, INSULATING FILM, COLOR FILTER, AND DISPLAY DEVICE - A negative-type photosensitive resin composition capable of forming a pattern having favorable adhesiveness at a low light exposure; a pattern forming method using the resin composition; a cured film, an insulating film, a color filter formed using resin composition; and a display device provided with the cured film, insulating film, or color filter. The resin composition contains a compound represented by the following formula (1). In the formula, R | 2014-08-21 |
20140231730 | VEHICLE JACK - A vehicle jack comprising a first portion comprising a lower portion adapted to support the jack relative to a ground surface in a first orientation, a rest member extending from the lower portion and adapted to at least partially support the jack relative to the ground surface in a second orientation, and a support member extending from the lower portion, and a second portion movable relative to the support member, the second portion comprising a surface adapted to abut with a vehicle. | 2014-08-21 |
20140231731 | GAS SPRING DEVICE, AND BALANCER DEVICE AND ACTUATOR WHICH USE GAS SPRING DEVICE - A gas spring device includes a gas spring which generates a force proportional to a differential pressure between an inner space pressure and an atmospheric pressure, a suction/discharge part which can adjust a gas amount in the gas spring inner space, a rotary body which is connected to the gas spring, to which a torque due to the force generated by the spring is applied, a displacement part which is connected to the rotary body, and is displaced in conjunction with a rotary body rotary movement, a speed change part which is arranged in one of or both of between the rotary body and the displacement part and between the gas spring and the rotary body, and a torque compensating part which sets the torque applied to the rotary body to substantially 0 when the inner space gas amount of the gas spring is at a predetermined value. | 2014-08-21 |
20140231732 | HYDRAULIC JACK FOR VEHICLE - A system for jacking a motor vehicle comprising: a telescoping hydraulic jack positioned near on at least one wheel of the motor vehicle, where said telescoping hydraulic jack includes a base and a plurality of sections connected to the base; and a means to supply hydraulic fluid to each telescoping hydraulic jack. The plurality of sections may include a first section connected to the base, a second section connected to the first section and a third section connected to the second section where the third section attaches to a frame of the motor vehicle. In one particular embodiment, the telescoping hydraulic jack is mounted near each wheel of the motor vehicle. | 2014-08-21 |
20140231733 | REMOTE ACTIVATION OF SCISSOR LIFT CYLINDER PROP - A cylinder prop assembly is cooperable with a lift cylinder for a scissor lift and includes a cylinder prop displaceable between a disengaged position, in which the cylinder rod is movable relative to the cylinder housing, and an engaged position in which the cylinder rod is locked from displacement relative to the cylinder housing. An actuation lever is coupled with the cylinder prop and is accessible to displace the cylinder prop between the disengaged position and the engaged position. | 2014-08-21 |
20140231734 | MARINE BARRIER GATE - A marine barrier gate includes a pleated row of buoyant panels movable between an expanded position where the panels have an angle therebetween, and a retracted position where the panels are substantially parallel. A first buoy is attached to a first end of the panel row, and a second buoy is remote from the panels when the panels are in the retracted position. The second buoy has a tow winch and cable attached to a second end opposite the first end, for moving the panels from the retracted position to the expanded position. The first buoy comprises a catenary winch and cable movably engagable with the panels and attached to the second buoy. When the panels are in the retracted position, the catenary winch sets a length or tension of the catenary cable such that it absorbs catenary loads on the barrier when the panels are moved to the expanded position by the tow winch. | 2014-08-21 |
20140231735 | REINFORCED GUARDRAIL EXTRUDER HEAD - A guardrail extruder head includes: top and bottom feeder channels; an impact plate; a top plate connecting the impact plate to the top feeder channel; a bottom plate connecting the impact plate to the bottom feeder channel; a front extruder plate coupled between the top and bottom plates; a curved deflector plate attached to the front extruder plate and coupled between the top and bottom plates; a front brace on the front extruder plate near the curved deflector plate and coupled between the top and bottom plates; a back extruder plate opposite to the front extruder plate and coupled between the top and bottom plates; a front side plate and a back side plate positioned between the top and bottom feeder channels; a back brace on the back extruder plate near the feeder channels and coupled between the top and bottom plates; and an impact force transfer brace coupled to the front brace and the impact plate. | 2014-08-21 |
20140231736 | Posts For Road Safety Barrier - A road safety barrier having a plurality of ropes supported by posts rigidly mounted on or in the ground is described. Each rope is held in tension against the posts and supported in a notch or groove in a side of the posts. The ropes are released from a post and the post is not pulled from the ground when a vertical force is exerted on the rope. The ropes when weaved are tensioned against the posts and this gives rise to a combined frictional resistance to displacement of the ropes relative to each post along the length of the safety barrier. The structure of at least some of the posts and/or their mounting with respect to the ground defines a minimum bending yield strength in a direction along the length of the barrier. This minimum bending yield strength is greater than the bending moment resulting from the combined frictional resistance forces acting on the post. | 2014-08-21 |
20140231737 | BASE FOR FENCING - A base for supporting posts of fencing, which base includes a block of plastics provided with apertures for receiving the ends of fencing posts. Each end of the block is provided with a gripping portion which projects longitudinally away from the main body of the block. A first interlocking means is associated with one of the gripping portions and interlocks with a corresponding second interlocking means of a cover which is fitted to the block over the gripping portion. The cover is of enhanced visibility compared to the main body of the block which is of a dull color. | 2014-08-21 |
20140231738 | New Locking System for a Stair Assistance Device - A stair assistance device for use with a handrail, the device comprising a sleeve engageable with and slideable relative to the handrail, and a brake element to hinder or prevent sliding movement of the sleeve, wherein, when the sleeve is engaged with a handrail, the brake element is resiliently biased towards the handrail, to hinder or prevent movement of the sleeve when the device is not in use. | 2014-08-21 |
20140231739 | Bracket Attachment System - The present disclosure is related to a universally adjustable metal two bracket attachment system for metal fence posts to attach various types of fencing materials or fence sections is disclosed. The subject metal fence post attachment bolt and bracket system is simple and easy to install, is universally adjustable to round or square metal fences posts, by bolting onto the “off the shelf” non-adjustable fence post brackets. The subject brackets allow both full section metal fencing with the bracket mounted with the open end side ways, and three rail metal fencing with the bracket facing up. | 2014-08-21 |
20140231740 | MEMORY DEVICE - According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the variable resistance portion, and includes first, second, and third tunnel insulating films, and first and second nanocrystal layers. The first nanocrystal layer between the first and second tunnel insulating films includes first conductive minute particles. The second nanocrystal layer between the second and third tunnel insulating films includes second conductive minute particles. | 2014-08-21 |
20140231741 | PLANAR RESISTIVE MEMORY INTEGRATION - In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive memory cell and a portion of a second two-terminal resistive memory cell within the void. The portions of the two-terminal resistive memory cells may be vertically stacked within the void. | 2014-08-21 |
20140231742 | RESISTANCE MEMORY DEVICE - Provided is a resistance memory device including a dielectric layer, a conductive layer, a bottom electrode, a top electrode and a variable resistance layer. The dielectric layer is disposed on a substrate and has a first opening constituted by a lower opening and an upper opening. The conductive layer fills up the lower opening. The bottom electrode is disposed on the bottom and on at least a portion of the sidewall of the upper opening. The top electrode is disposed in the upper opening. The variable resistance layer is disposed between the top electrode and the bottom electrode. | 2014-08-21 |
20140231743 | MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS - Some embodiments include memory cells having programmable material between a pair of electrodes. The programmable material includes a material selected from the group consisting of a metal silicate with a ratio of metal to silicon within a range of from about 2 to about 6, and metal aluminate with a ratio of metal to aluminum within a range of from about 2 to about 6. Some embodiments include methods of forming memory cells. First electrode material is formed. Programmable material is formed over the first electrode material, with the programmable material including metal silicate and/or metal aluminate. Second electrode material is formed over the programmable material, and then an anneal is conducted at a temperature within a range of from about 300° C. to about 500° C. for a time of from about 1 minute to about 1 hour. | 2014-08-21 |
20140231744 | Methods for forming resistive switching memory elements - Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication. | 2014-08-21 |
20140231745 | P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS - A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of Al | 2014-08-21 |
20140231746 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a first impurity region including a p-type impurity and a second impurity region including an n-type impurity. The first and second impurity regions are alternately repeated at least once. | 2014-08-21 |
20140231747 | LIGHT EMITTING DIODE - A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2×10 | 2014-08-21 |
20140231748 | SUBSTRATE HAVING CONCAVE-CONVEX PATTERN, LIGHT-EMITTING DIODE INCLUDING THE SUBSTRATE, AND METHOD FOR FABRICATING THE DIODE - Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present. | 2014-08-21 |
20140231749 | NANO PARTICLE, NANO PARTICLE COMPLEX HAVING THE SAME AND METHOD OF FABRICATING THE SAME - Disclosed are a nano particle, a nano particle complex and a method of fabricating the nano particle. The nano particle includes a compound semiconductor having a first metal element and a second metal element. The property of the nano particle is readily controlled depending on the composition of the first and second metal elements. | 2014-08-21 |
20140231750 | QUANTUM WELL INFRARED PHOTODETECTORS USING II-VI MATERIAL SYSTEMS - A quantum well infrared photodetector (QWIP) and method of making is disclosed. The QWIP includes a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier, the quantum wells and barriers being formed of II-VI semiconductor materials. A multiple wavelength QWIP is also disclosed and includes a plurality of QWIPs stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths. A dual wavelength QWIP is also disclosed and includes two QWIPs stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths. | 2014-08-21 |
20140231751 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device using multi-layered graphene wires includes a substrate having semiconductor elements formed therein, a first graphene wire formed above the substrate and including a multi-layered graphene layer having a preset impurity doped therein, a second graphene wire formed on the same layer as the first multi-layered graphene wire above the substrate and including a multi-layered graphene layer into which the preset impurity is not doped, a lower-layer contact connected to the undersurface side of the first multi-layered graphene wire, and an upper-layer contact connected to the upper surface side of the second multi-layered graphene wire. | 2014-08-21 |
20140231752 | GRAPHENE DEVICE AND ELECTRONIC APPARATUS - A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor. | 2014-08-21 |
20140231753 | Multi-color light emitting diode and method for making same - A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled. | 2014-08-21 |
20140231754 | DITRIPHENYLENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention discloses a novel ditriphenylene derivative is represented by the following formula (I), the organic EL device employing the ditriphenylene derivative as host material or dopant material of emitting layer can lower driving voltage, prolong half-life time and increase the efficiency. | 2014-08-21 |
20140231755 | PHOSPHORESCENT COMPOUND - A metal iridium complexes, devices containing the same, and formulations including the same described. The complexes can have the formula Ir(L | 2014-08-21 |
20140231756 | PHOSPHORESCENT COMPOUND WITH FUSED RNG SUBSTITUTION - Compounds including a ligand L according to Formula I devices containing the same and formulations including the same are described. | 2014-08-21 |
20140231757 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes a first electrode, a hole injection layer disposed on the first electrode, a light emitting layer disposed on the hole injection layer, an electron injection layer disposed on the light emitting layer, a chlorine-doped layer disposed on the electrode injection layer and including chlorine and a same material as the electron injection layer, and a second electrode disposed on the chlorine-doped layer. | 2014-08-21 |
20140231758 | DISPLAY DEVICE USING PHOTONIC CRYSTAL - A display device including a light emitting transistor, and a photonic crystal on the light emitting transistor. | 2014-08-21 |
20140231759 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting device includes a first electrode; a second electrode; an organic layer between the first electrode and the second electrode; and a light efficiency-improvement layer disposed on the first electrode or the second electrode. The light efficiency-improvement layer includes a heterocyclic compound represented by Formula 1, | 2014-08-21 |
20140231760 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate including first, second and third sub-pixel regions, a first electrode formed in each of the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region of the substrate, a first light emitting layer formed on the first electrode of each of the first sub-pixel region, the second sub-pixel region, and the third sub-pixel region, spacer layers formed on the first light emitting layer of the first sub-pixel region and the second sub-pixel region and including a material of the first light emitting layer, a second light emitting layer formed on the spacer layer of the first sub-pixel region, a third light emitting layer formed on the spacer layer of the second sub-pixel region, and a second electrode formed on the first light emitting layer, the second light emitting layer, and the third light emitting layer. | 2014-08-21 |
20140231761 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate and a method of manufacturing the same. The display substrate includes a substrate including an active area and an inactive area, an organic light-emitting diode (OLED) unit disposed on the active area of the substrate, and a transmittance measurement pattern unit disposed on the inactive area of the substrate. The transmittance measurement pattern unit includes a deposition assistant layer pattern disposed on the substrate. | 2014-08-21 |
20140231762 | METHOD FOR FABRICATING MICRO ELECTRO DEVICE, METHOD FOR FABRICATING ORGANIC LIGHT EMITTING DISPLAY DEVICE, MICRO ELECTRO DEVICE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE FABRICATED THEREBY - A method for fabricating a micro electro device includes forming a conductive pattern on a substrate, forming an organic insulating film on a whole surface of the substrate with an organic insulating material to cover the conductive pattern, preparing a printing plate coated with an insulating film removing material, and forming a contact hole by removing a first portion of the organic insulating film through making the insulating film removing material come in contact with the first portion of the organic insulating film that corresponds to the conductive pattern, and forming a contact in the contact hole | 2014-08-21 |
20140231763 | FLEXIBLE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A flexible display device includes a substrate including a bending area that is bent and a flat area that is not bent; a device/wiring layer including a thin film transistor, the device/wiring layer being on the substrate; first pixel units on the flat area on the device/wiring layer; and second pixel units on the bending area on the device/wiring layer, an inter-pixel interval of the first pixel units being different from an inter-pixel interval of the second pixel units. | 2014-08-21 |
20140231764 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal. | 2014-08-21 |
20140231765 | REMOTE DOPING OF ORGANIC THIN FILM TRANSISTORS - Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above. | 2014-08-21 |
20140231766 | ORGANIC LIGHT EMITTING DEVICE - Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nano-particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light. | 2014-08-21 |
20140231767 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display device and a manufacturing method thereof are provided. The organic light emitting diode display device includes a first flexible substrate, a second flexible substrate, a first barrier layer, a second barrier layer, an organic light emitting diode element, and a metal enclosing wall. The first barrier layer is disposed on the first flexible substrate, and the second barrier layer is disposed on the second flexible substrate. The organic light emitting diode element is disposed between the first barrier layer and the second barrier layer. The metal enclosing wall connects the first flexible substrate to the second flexible substrate and surrounds the organic light emitting diode element. | 2014-08-21 |
20140231768 | Non-Blocked Phosphorescent OLEDs - An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum. | 2014-08-21 |
20140231769 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ELECTRONIC DEVICE - An organic electroluminescence device includes: a cathode; an anode; and an organic layer having one or more layers and provided between the anode and the cathode, in which the organic layer includes an emitting layer, and the emitting layer includes a first host material, a second host material and a phosphorescent dopant material. The first host material is a compound represented by a formula (1) below. The second host material is a compound represented by a formula (4) below. | 2014-08-21 |
20140231770 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel substance capable of emitting phosphorescence is provided. An organometallic complex represented by General Fomulae (G3) or (G5). In the formulae, M represents iridium, platinum, palladium, or rhodium, R | 2014-08-21 |
20140231771 | CROSS-LINKING POLYMER AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A polymer including structural units represented by the following formulas (A) and (B). | 2014-08-21 |
20140231772 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING THE SAME - A compound represented by the following formula (1): | 2014-08-21 |
20140231773 | CARBAZOLOCARBAZOL-BIS(DICARBOXIMIDES) AND THEIR USE AS SEMICONDUCTORS - The present invention relates to carbazolocarbazol-bis(dicarboximides), a method for their preparation and their use as semiconductors, in particular as semiconductors in organic electronics and organic photovoltaics. | 2014-08-21 |
20140231774 | MATERIAL FOR ORGANIC LIGHT-EMITTING DEVICE, AND ORGANIC LIGHT-EMITTING DEVICE USING SAME - The present invention provides an organic light emitting device including a compound and an organic material layer composed of one more layers including a first electrode, a second electrode and a light emitting layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layer include the compound of Formula 1 or a compound in which a heat curable or photo curable functional group is introduced into the above-described compound. | 2014-08-21 |
20140231775 | DENDRIMER COMPOUND AND ORGANIC LUMINESCENT DEVICE EMPLOYING THE SAME - A dendrimer compound characterized by comprising a core represented by the following formula (1-1), (1-2), (1-3), or (1-4) and at least one kind of dendritic structure selected among dendritic structures represented by the following formulae (3) and (4). | 2014-08-21 |
20140231776 | METHOD FOR PRODUCING CONCAVE-CONVEX SUBSTRATE USING SOL-GEL METHOD, SOL USED IN SAME, METHOD FOR PRODUCING ORGANIC EL ELEMENT USING SAME, AND ORGANIC EL ELEMENT OBTAINED THEREBY - A method for producing a substrate having a concavity and convexity pattern includes: a step for applying a sol containing a silica precursor on a substrate to form a coating film; a step for drying the coating film; a pressing step for pressing a mold having a concavity and convexity pattern against the dried coating film with a pressing roll; a step for peeling off the mold from the coating film; and a step for baking the coating film to which the concavity and convexity pattern has been transferred. The coating film is dried in the drying step so that the ratio of weight of the coating film to dried weight of the coating film is in a range of 1.4 to 8.8, the dried weight being obtained by baking the coating film at a temperature of 100 degrees Celsius. The coating film may be heated in the pressing step. | 2014-08-21 |
20140231777 | METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING ELEMENT, DISPLAY PANEL, AND DISPLAY DEVICE - A method of manufacturing an organic light-emitting element is provided. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer. The banks define apertures corresponding to light-emitters. The resin material is the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are degraded by applying electrical power to an element structure. | 2014-08-21 |
20140231778 | ORGANIC EL DEVICE AND ELECTRONIC APPARATUS - An organic EL device includes a reflecting layer which has at least light reflectivity, a first electrode which is arranged on the reflecting layer through a first insulating layer, an organic functional layer which is arranged on the first electrode and includes at least a light emitting layer, a second electrode which is arranged on the organic functional layer and has at least light reflectivity, and a holding capacitance. In the organic EL device, an optical resonator which resonates light from the organic functional layer is formed by the reflecting layer and the second electrode, and the holding capacitance is formed using the reflecting layer, the first insulating layer, and the first electrode. | 2014-08-21 |
20140231779 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1: | 2014-08-21 |
20140231780 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus for selectively realizing circular polarization according to external light conditions, including a substrate; an organic light-emitting device on the substrate; a sealing member on the organic light-emitting device; a phase retardation layer on a surface of the substrate, the organic light-emitting device, or the sealing member; and a linear polarization layer on another surface of the substrate, the organic light-emitting device, or the sealing member, wherein the linear polarization layer is located to be closer to a source of external light than the phase retardation layer, and wherein the linear polarization layer comprises a photochromic material. | 2014-08-21 |
20140231781 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates electric charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and has a thickness of 1 to 100 nm. The protective film contains hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 to 500 nm. | 2014-08-21 |
20140231782 | IMAGING DEVICE AND METHOD FOR MANUFACTURING IMAGING DEVICE - An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of −50 MPa to +60 MPa in the whole of the protective film. | 2014-08-21 |
20140231783 | MATERIAL FOR ORGANIC ELECTRONIC DEVICE, AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound. | 2014-08-21 |
20140231784 | POLYMERIC SEMICONDUCTORS, DEVICES, AND RELATED METHODS - A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I) a, b, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R | 2014-08-21 |
20140231785 | ORGANIC ELECTROLUMINESCENCE ILLUMINATING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic electroluminescence illuminating device (L) has a structure in which an organic electroluminescence element ( | 2014-08-21 |
20140231786 | Blue Phosphorescent Organic Light Emitting Device Having a Minimal Lamination Structure - Disclosed is a blue phosphorescent organic light emitting device having a minimal lamination structure. The device includes an anode; an emitting layer formed on the anode and including a host and a dopant; an electron transport layer formed on the emitting layer; and a cathode formed on the electron transport layer. A difference between a work function of the anode and a high occupied molecular orbital (HOMO) energy level of the emitting layer is less than 1.0 eV, and a difference between a low occupied molecular orbital (LUMO) energy level of the emitting layer and an LUMO energy level of the electron transport layer is less than 1.0 eV. | 2014-08-21 |
20140231787 | WHITE ORGANIC EL ELEMENT AND ILLUMINATING APPARATUS AND DISPLAY APPARATUS USING THE SAME - The present invention provides a white organic EL element improved in durability characteristic. | 2014-08-21 |
20140231788 | DIGITIZED OLED LIGHT SOURCE - Embodiments described herein may provide for devices comprising a digitized OLED light source ( | 2014-08-21 |
20140231789 | DISPLAY PANEL, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a display panel, a display unit, and an electronic apparatus that make it possible to reduce a leakage current arising between adjacent pixels. The display panel includes a plurality of pixels at a display region. Each of the pixels has an organic EL device, and a pixel circuit that drives the organic EL device. The organic EL device has an anode electrode, a cathode electrode, and an organic layer that is provided between the anode electrode and the cathode electrode. A side surface of the anode electrode is structured in such a manner that the cross-sectional area of the anode electrode on the side of the cathode electrode is larger than that of the anode electrode on the opposite side of the cathode electrode. | 2014-08-21 |
20140231790 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit is provided. The display unit includes a plurality of pixels having first to third sub-pixels each of which corresponds to respective colors of red, green, and blue, and a fourth sub-pixel exhibiting higher luminance than the first to third sub-pixels. In each of the pixels, the first to fourth sub-pixels have light-emitting devices. In the first to third sub-pixels, color filters are provided, and in the fourth sub-pixel, the transmittance of light emitted from the light-emitting device is configured to be reduced at a partial or whole region of the fourth sub-pixel. A difference in the transmittance among the first to third sub-pixels having the color filters and the fourth sub-pixel having no color filter is reduced to ensure an excellent luminance balance, which makes it easy to represent desired chromaticity. | 2014-08-21 |
20140231791 | COMPOSITION CAPABLE OF CHANGING ITS SOLUBILITY, HOLE TRANSPORT MATERIAL COMPOSITION, AND ORGANIC ELECTRONIC ELEMENT USING THE SAME - An embodiment of the present invention relates to a composition containing a polymer or oligomer (A) having a repeating unit with hole transport properties and also having a thienyl group which may have a substituent, and an initiator (B), wherein the solubility of the composition is capable of being changed by applying heat, light, or both heat and light. | 2014-08-21 |
20140231792 | ORGANIC EL ELEMENT AND METHOD FOR MANUFACTURING ORGANIC EL ELEMENT - To form stabilized organic light-emitting medium layers using the relief printing method and to provide an organic EL element excellent in terms of pattern-forming accuracy, film thickness uniformity and light-emitting characteristics, a substrate | 2014-08-21 |
20140231793 | LAMP WITH MULTIPLE FLEXIBLE OLEDs - Devices comprising multiple flexible substrates bearing OLEDs are provided. The flexible substrates are interconnected, and the properties of the substrates and the interconnections provide the shape of the device. | 2014-08-21 |
20140231794 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND ORGANIC ELECTROLUMINESCENT ELEMENT PRODUCED USING SAME - A compound represented by the following formula (1): | 2014-08-21 |
20140231795 | MATERIAL FOR HOLE INJECTION TRANSPORT LAYERS, INK FOR FORMING HOLE INJECTION TRANSPORT LAYERS, DEVICE, AND PRODUCTION METHODS THEREOF - The present invention is to provide the following: a material for hole injection transport layers and a production method thereof, the material capable of forming a hole injection transport layer by the solution application method and increasing device lifetime; an ink for forming hole injection transport layers and a production method thereof, the ink capable of forming a hole injection transport layer by the solution application method and increasing device lifetime; and a long-life device and a production method thereof. | 2014-08-21 |
20140231796 | ORGANIC ELECTRONIC DEVICE FOR LIGHTING - There is provided an organic electronic device including an anode, a hole transport layer, an emissive layer, an electron transport layer, and a cathode. The emissive layer includes at least one first electroluminescent material and the electron transport layer includes at least one electron transport material and at least one second electroluminescent material. The device has white light emission. | 2014-08-21 |
20140231797 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes, an oxide semiconductor layer including a channel region, and a source region and a drain region, a first insulation film covering the channel region and exposing the source region and the drain region, a first conductive layer including a gate electrode, and a first terminal electrode, a second insulation film covering the first conductive layer, the source region and the drain region, a second conductive layer including a source electrode, a drain electrode, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film, and a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode. | 2014-08-21 |
20140231798 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING THE SAME, DISPLAY DEVICE, IMAGE SENSOR, X-RAY SENSOR, AND X-RAY DIGITAL IMAGING DEVICE - A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a) Ga(b) Zn(c) O(d), wherein 00, 00, and a second region represented by In(p) Ga(q) Zn(r) O(s), wherein q/(p+q)>0.250, p>0, q>0, r>0, and s>0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween; and a source electrode and a drain electrode which are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer. | 2014-08-21 |
20140231799 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention comprises first and second transistors and first and second capacitors. One of source and drain electrodes of the first transistor is electrically connected to a first wiring, the other is electrically connected to a second wiring, and a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor. The other of the source and drain electrodes of the second transistor is electrically connected to the first wiring, and a gate electrode of the second transistor is electrically connected to one of electrodes of a second capacitor and a fifth wiring. The other electrode of the first capacitor is electrically connected to a third wiring, and the other electrode of the second capacitor is eclectically connected to a fourth wiring. | 2014-08-21 |
20140231800 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed. | 2014-08-21 |
20140231801 | Semiconductor Memory Device And Manufacturing Method Thereof - A memory cell therein includes a first transistor and a capacitor and stores data corresponding to a potential held in the capacitor. The first transistor includes a pair of electrodes, an insulating film in contact with side surfaces of the electrodes, a first gate electrode provided between the electrodes with the insulating film provided between the first gate electrode and each electrode and whose top surface is at a lower level than top surfaces of the electrodes, a first gate insulating film over the first gate electrode, an oxide semiconductor film in contact with the first gate insulating film and the electrodes, a second gate insulating film at least over the oxide semiconductor film, and a second gate electrode over the oxide semiconductor film with the second gate insulating film provided therebetween. The capacitor is connected to the first transistor through one of the electrodes. | 2014-08-21 |
20140231802 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer. | 2014-08-21 |
20140231803 | SEMICONDUCTOR DEVICE - A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including c-axis aligned crystal parts. In the semiconductor device, the first oxide semiconductor film, the second oxide semiconductor film, and the oxide film are each formed using a IGZO film, where the second oxide semiconductor film has a higher indium content than the first oxide semiconductor film, the first oxide semiconductor film has a higher indium content than the oxide film, the oxide film has a higher gallium content than the first oxide semiconductor film, and the first oxide semiconductor film has a higher gallium content than the second oxide semiconductor film. | 2014-08-21 |
20140231804 | SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and its fabrication method are provided, the sensor comprises: a base substrate ( | 2014-08-21 |
20140231805 | DISPLAY UNIT, METHOD OF DRIVING THE SAME, AND ELECTRONIC APPARATUS - A display unit is provided with pixels arranged in a matrix form, and each of the pixels includes: an electro-optical device; a transistor; and a capacitor formed by providing a metal layer between a first semiconductor layer and a second semiconductor layer, the first semiconductor layer forming a source region and a drain region of the transistor, and the second semiconductor layer formed in a layer different from a layer where the first semiconductor layer is formed, in which a voltage allowing a capacity value of the capacitor to be increased is applied to the metal layer during light emission from the electro-optical device. | 2014-08-21 |
20140231806 | ARRAY SUBSTRATE FOR REFLECTIVE TYPE OR TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE - An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure. | 2014-08-21 |
20140231807 | LIQUID CRYSTAL DISPLAY DEVICE - It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element. | 2014-08-21 |
20140231808 | DISPLAY DEVICE - The inventors found out that in the case of performing a low gray scale display in which a very small amount of current is supplied to a light emitting element, variations in threshold voltages of driving transistors become notable since the gate-source voltage is low. In view of this, the invention provides a display device in which variations in the threshold voltages of the driving transistors are reduced even in the low gray scale display, and a driving method thereof. According to the invention, a gate-source voltage of the driving transistor is set higher in the low gray scale display than that in the high gray scale display. As one mode to achieve this, different power source lines are provided for the low gray scale display and the high gray scale display and their potentials are set to be different. | 2014-08-21 |
20140231809 | METHODOLOGY FOR FABRICATING ISOTROPICALLY RECESSED SOURCE REGIONS OF CMOS TRANSISTORS - A Field Effect Transistor device includes a buried oxide layer, a silicon layer above the buried oxide layer, an isotropically recessed source region, and a gate stack comprising a gate dielectric, a conductive material, and a spacer. | 2014-08-21 |
20140231810 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - A thin film transistor, includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etch stopper disposed on a channel of the semiconductor; a source electrode disposed on the semiconductor; and a drain electrode disposed on the semiconductor. At least one of the source electrode and the drain electrode does not overlap with the etch stopper. At least one dimension of the etch stopper and the channel of the semiconductor are substantially the same. | 2014-08-21 |
20140231811 | SEMICONDUCTOR DEVICE STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND PIXEL STRUCTURE USING THE SAME - A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer. | 2014-08-21 |
20140231812 | SUBSTRATE HAVING THIN FILM AND METHOD OF THIN FILM FORMATION - A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film. | 2014-08-21 |
20140231813 | THIN-FILM DEVICE, THIN-FILM DEVICE ARRAY, AND METHOD OF MANUFACTURING THIN-FILM DEVICE - A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area. | 2014-08-21 |
20140231814 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - In a thin film transistor array panel and a method of manufacturing the same, a thin passivation layer is positioned between a first field generating electrode and a second field generating electrode. The thin passivation layer overlaps the first and second field generating electrodes. The thin passivation layer includes a transparent photosensitive organic material. When forming the first field generating electrode, the passivation layer is used as a photosensitive film. Accordingly, the passivation layer and the first field generating electrode may be formed using a same single photo-mask. Accordingly, the manufacturing cost of the thin film transistor array panel may be reduced. | 2014-08-21 |
20140231815 | PACKAGE FOR HIGH-POWER SEMICONDUCTOR DEVICES - Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed. | 2014-08-21 |
20140231816 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF FORMING THE SAME - A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode. | 2014-08-21 |