34th week of 2012 patent applcation highlights part 13 |
Patent application number | Title | Published |
20120211683 | VALVE APPARATUS - A valve apparatus includes a valve main body provided with a first inlet and outlet, a valve chamber to which a valve port is open, and a second inlet and outlet connected to the valve port. A valve shaft having a valve body portion for opening and closing the valve port is provided in the valve chamber. A relief valve is provided within the valve body portion to relieve a pressure of the valve chamber to the second inlet and outlet when a fluid pressure of the refrigerant within the valve chamber becomes a predetermined pressure or more in a fully closed state in which the valve port is closed by the valve body portion, thereby to automatically relieve a fluid within a valve chamber without causing a cost increase and an enlargement of size. | 2012-08-23 |
20120211684 | Release Device - A detector ( | 2012-08-23 |
20120211685 | PNEUMATIC ACTUATOR AIR FLOW CONTROL SYSTEM - A pneumatic actuator air flow control system includes a pneumatic rotary actuator (PRA) and a solenoid air flow control valve (SAFCV). The PRA contains an air reservoir and a vane housing allowing pressurized air to rotate an air-driven vane. The SAFCV includes a flow control valve body (FCVB), a pilot solenoid valve (PSV) and a switch system, wherein the FCVB and the PRA can be connected to direct the pressurized air into the air reservoir, and the PSV is used to control the pressurized air in and out of the PRA to change the vane's rotation movement in the vane housing. Additionally, the switch system allows users to switch between a double-acting and fail-safe operation. When there is no pressurized air and/or electrical power and if an emergent need to open or close the valve, a manual override in the PSV can be used without further installation of a declutchable manual gear operator or external piping when there is no pressurized air and/or electrical power. | 2012-08-23 |
20120211686 | SOLENOID VALVE - The present invention provides a solenoid valve able to control flow amount as desired without receiving influence of change in fluid pressure. In the present invention, in a control valve for opening and closing a first poppet valve | 2012-08-23 |
20120211687 | ISOLATION VALVE WITH MOTOR DRIVEN SEALING MECHANISM - An isolation valve has a housing having a vent path and a sealing member that opens and closes the vent path. The sealing member is driven by a motor via a gear arrangement that links the sealing member with the motor. The motor drives the gear arrangement in a first direction to open the vent path and a second direction to close the vent path. During operation, a motor current rises when the sealing member reaches the first position and/or the second position. The controller detects the motor current rise and changes operation of the motor (e.g., stops the motor) in response. | 2012-08-23 |
20120211688 | VALVE ACTUATOR ASSEMBLY WITH TOOL-LESS INTERCONNECT - A valve actuator assembly may include a valve having a mounting adapter and an actuator housing configured to releasably and non-rotatably attach to the mounting adapter without tools. The actuator housing may be attached at any one of a plurality of discrete radial orientations. In some instances, the actuator housing may include a spring retainer clip configured to engage the mounting adapter, and a button element configured to engage the spring retainer clip to release the spring retainer slip from the mounting adapter. | 2012-08-23 |
20120211689 | INLET CONTROL VALVES FOR USE WITH FUEL DELIVERY SYSTEMS - Inlet control valves for use with fuel delivery systems are described. An example inlet control valve includes a first body portion having a first coupling to define an inlet of the control valve and one of a plurality of fasteners or a plurality of slots opposite the inlet. A second body portion coupled to the first body portion to define a fluid flow passageway, where the second body portion has a second coupling to define an outlet of the control valve and the other one of the plurality of fasteners or the plurality of slots opposite the outlet. The first plurality of slots receives the first plurality of fasteners when the first body portion is coupled to the second body portion. A valve is pivotally coupled relative to the first and second body portions to control fluid flow through the passageway. | 2012-08-23 |
20120211690 | Ball Valves and Associated Methods - Exemplary embodiments are directed to ball valves and associated methods that include a valve body, a ball disposed inside the valve body, a seat retainer, a seat, a stem and a stem bearing. The exemplary seat retainer includes an outer surface with a first outer diameter, a second outer diameter and a transition region connecting the first outer diameter and the second outer diameter in a ramped manner. The exemplary seat includes an annular groove on a seat face to provide two distinct contact points between the seat and the ball. The exemplary stem passes through a valve body opening and is in mechanical communication with the ball. The exemplary stem bearing includes a bore extending therethrough, a first inner diameter, a second inner diameter and a stem bearing transition region connecting the first inner diameter and the second inner diameter in a tapered manner. | 2012-08-23 |
20120211691 | Valve for Controlling a Fluid - A valve for controlling a fluid includes a closing body and a valve seat. The closing body opens and closes a passage at the valve seat along a sealing line. The valve seat and the closing body have a rotationally symmetrical region where the sealing line between the valve seat and closing body is formed. The valve seat and/or the closing body also has a nonrotationally symmetrical region, which adjoins the rotationally symmetrical region in a throughflow direction of the valve. | 2012-08-23 |
20120211692 | HEAT-RAY SHIELDING COMPOSITION AND METHOD FOR PRODUCING THE SAME - Disclosed are a heat-ray shielding composition including an indium tin oxide powder which has a BET specific surface area of 40 m | 2012-08-23 |
20120211693 | FERROMAGNETIC POWDER COMPOSITION AND METHOD FOR ITS PRODUCTION - A ferromagnetic powder composition is provided comprising soft magnetic iron-based core particles having an apparent density of 3.2-3.7 g/ml, and wherein the surface of the core particles is provided with a phosphorus-based inorganic insulating layer and at least one metal-organic layer, located outside the first phosphorus-based inorganic insulating layer. A process further is provided for producing the composition and a method for the manufacturing of soft magnetic composite components prepared from the composition, as well as the obtained component. | 2012-08-23 |
20120211694 | Reduced Toxicity Ethylene Glycol-Based Antifreeze/Heat Transfer Fluid Concentrates and Antifreeze/Heat Transfer Fluids - A reduced toxicity ethylene glycol-based antifreeze/heat transfer fluid concentrate is provided comprised of ethylene glycol, a polyhydric alcohol having a boiling point above about 150° C. and that acts as an alcohol dehydrogenase inhibitor, such as propylene glycol or glycerol, and selected additives. The antifreeze/heat transfer fluid concentrate may be combined with water to form a coolant solution for use in internal combustion engines. | 2012-08-23 |
20120211695 | NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY - Provided is a negative electrode active material for a lithium-ion secondary battery, comprising SiO | 2012-08-23 |
20120211696 | HIGH STABILITY DIIONIC LIQUID SALTS - The present invention relates to diionic liquid salts of dicationic or dianionic molecules, as well as solvents comprising such diionic liquids and the use of such diionic liquids as the stationary phase in a gas chromatographic column. | 2012-08-23 |
20120211697 | Oil Extraction Device For Use At Home And Method Of Use - The present invention is an oil extraction device comprising a housing; a first trough resting within an upper portion of said housing, where said first trough holds a solvent; a heat source within said housing, where said heat source heats said first trough; a control device mounted within said housing, where said control device controls said heat source; a reservoir attached to said upper portion of said housing; a strainer basket positioned within said reservoir, where said strainer basket holds an extraction substance; a filter fitted within said strainer basket below said extraction substance; a second filter positioned above said extraction substance; a condenser positioned above said housing; a second trough positioned at a bottom portion of said condenser; and a set of flanges extruding from said condenser, where said set of flanges enable said condenser to cool and condense solvent vapor when operating said oil extraction device. | 2012-08-23 |
20120211698 | STABILIZATION OF LIQUID SOLUTIONS OF RECOMBINANT PROTEIN FOR FROZEN STORAGE - The invention relates to a method for stabilizing a bulk solution of recombinant protein for frozen storage, which comprises providing a partially-purified solution of recombinant protein which has a monovalent salt concentration of at least 100 mM, and adding a carbohydrate to said solution in an amount sufficient that, upon freezing, the solution has a glass transition temperature of −56° C. or higher. | 2012-08-23 |
20120211699 | Process for Producing Water-Absorbing Polymer Particles with High Free Swell Rate - The invention relates to a process for producing water-absorbing polymer particles with high free swell rate, comprising the steps of polymerization, drying, grinding, classification and thermal surface postcrosslinking, remoisturization and drying again. | 2012-08-23 |
20120211700 | PROCESS FOR PRODUCING BETA-SIALON FLUORESCENT MATERIAL - Provided is a production method of a β-type sialon fluorescent substance, where luminescence intensity can be improved without adding a metal element other than elements composing a β-type sialon fluorescent substance. Namely, in a production method of a fluorescent substance containing an optically-active element as the luminescence center in a crystal of nitride or acid nitride, a β-type sialon fluorescent substance is produced by a burning process for heat-treating a mixture including metal compound powder and an optically-active element compound; a high-temperature annealing process for heat-treating the burned product after cooling under a nitrogen atmosphere; a rare-gas annealing process for heat-treating the high-temperature annealed product under a rare gas atmosphere; and a process for treating the rare-gas treated product with an acid. | 2012-08-23 |
20120211701 | MATERIALS FOR ELECTRONIC DEVICES - The present invention relates to compounds of the formula (I), to mixtures of the said compounds with emitter compounds, to the use of compounds of the formula (I) and the said mixtures in electronic devices, and to electronic devices containing one or more compounds of the formula (I) and/or mixtures of compounds of the formula (I) with emitter compounds. | 2012-08-23 |
20120211702 | Electrically Conducting Polymer And Copolymer Compositions, Methods For Making Same And Applications Therefor - The present invention relates generally to substituted polyaniline polymer/copolymer compositions, suitable slats thereof and uses therefore. In one embodiment, the present invention relates to conductive substituted polyaniline polymer/copolymer compositions, suitable slats thereof and uses therefore. In still another embodiment, the present invention relates to self-protonated substituted polyaniline polymer/copolymer compositions, suitable slats thereof and uses therefore. In yet another embodiment, the present invention relates to self-protonated sulfonic acid- or boric acid-substituted polyaniline polymer/copolymer compositions, suitable slats thereof and uses therefore. In still another embodiment, the one or more various polyaniline polymer/copolymer compositions of the present invention are both biodegradable and conducting polymer compositions. | 2012-08-23 |
20120211703 | Lead-Acid Batteries and Pastes Therefor - A paste suitable for a negative plate of a lead-acid battery, the paste comprising lead oxide and carbon black, wherein the carbon black has the following properties: (a) a BET surface area between about 100 and about 2100 m | 2012-08-23 |
20120211704 | Endless flexible members with a polymeric release agent for imaging devices - Flexible members for use in imaging devices comprise a polymerizable release agent. | 2012-08-23 |
20120211705 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer comprises a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent. | 2012-08-23 |
20120211706 | POLYDENTATE LIGAND METAL COMPLEX - The present invention provides a metal complex that has excellent durability, and a device and the like having excellent durability that uses such a metal complex. Specifically, the present invention provides a metal complex comprising (a) a polydentate ligand having denticity of five or more that includes a heteroaromatic ring which contains two or more atoms selected from the group consisting of a nitrogen atom, an oxygen atom, and a sulfur atom, and (b) an ion of a metal selected from the group consisting of cerium, praseodymium, ytterbium, and lutetium; a composition comprising the metal complex and a charge transport material; an organic thin film obtained by using the metal complex or composition; and a device obtained by using the metal complex, composition, or organic thin film. | 2012-08-23 |
20120211707 | METAL COMPLEX COMPOSITION AND COMPLEX POLYMER - A metal complex composition comprising a metal complex including a structure represented by the following formula (1) and a charge transport material, | 2012-08-23 |
20120211708 | Roofing Membrane Puller and Method of Use - A membrane puller and related method. The puller includes a frame including a front end and a rear end, a lever assembly, a clamp assembly carried by the frame and including an elongate body slidably received by the front end of the frame and a clamp member fixed to the body, and a cable having one end attached to the lever assembly and another end attached to the clamp assembly, wherein the lever assembly is movable toward the front end of the frame to place the cable in tension to pull the clamp assembly toward the front end of the frame such that the elongate body slidably moves toward the rear end of the frame. | 2012-08-23 |
20120211709 | PNEUMATIC MULTI-WEIGHT BALANCING DEVICE - A pneumatic load balancing device having an inflatable reservoir establishing via an amplifier a pressure within a lift chamber that is sufficient to balance the weight of an object being lifted. The reservoir is inflated and deflated by inflation and deflation valves that may be operated from an operator control center proximal an end effector of the device. The valves may be actuated via pushbuttons or in a mutually exclusively fashion via a neutrally biased reciprocating actuator. The device allows loads of different weights to be lifted in a semi-automatic fashion with operator involvement to select the load balancing pressure. The device may have an air release system that closes a blocking valve in the event of release of the object and optionally in the event of a loss of air supply. The pressure within the lift chamber is thereby preserved and can be vented at different rates. | 2012-08-23 |
20120211710 | GUARDRAIL ASSEMBLY, BREAKAWAY SUPPORT POST FOR A GUARDRAIL AND METHODS FOR THE ASSEMBLY AND USE THEREOF - A guardrail assembly includes first and second rail sections, with a deforming member deforming the first rail section as it moves relative to the second rail section. Methods of using and assembling a guardrail assembly are also provided. | 2012-08-23 |
20120211711 | DEVICE FOR SECURING RAILWAY LINES - The device ( | 2012-08-23 |
20120211712 | ROCKFALL PROTECTION SYSTEM - A rockfall protection system may include a plurality of supports that each have a support head, along with a catch net, an upper support cable guiding an upper edge of the catch net at the support heads, and an upper central cable and a lower central cable guiding the catch net in a central support area of the supports. The lower central cable may be tensioned using side anchors provided with at least one braking element. The system may also include a lower support cable guiding a lower edge of the catch net and being guided together with the lower edge of the catch net on the downhill side of and separated from the supports. The braking element may be connected to the side anchor and to the central cable by a cable loop. The side anchor and central cable may be connected via a predetermined breaking point. | 2012-08-23 |
20120211713 | ADJUSTABLE MECHANISM FOR CHANGING FLOOR HEIGHT OF A PLAY YARD - The adjustable mechanism for changing floor height of a play yard according to the present invention comprises at least a foldable frame, a first bed floor, a flexible envelope and an adjustable mechanism. The foldable frame has an upper border portion and a base support assembly. The first bed floor is connected to the base support assembly. The flexible envelope has a second bed floor and a shading periphery connected with the second bed floor, the shading periphery is folded to form an indigitation length exposed outside the foldable frame thereby adjustably hanging on the upper border portion. The adjustable mechanism is operatively mounted on the foldable frame and connected with the lower end of the indigitation length for adjusting the second bed floor relative to the first bed floor in distance and height. | 2012-08-23 |
20120211714 | FENCE SYSTEM WITH INSECT BARRIER - A fence system and method of manufacturing a fence includes a fence post and a rail inserted into and supported by the fence post. The rail is inserted into an aperture located in a sidewall of the post, the aperture having a shape that is substantially the same as the cross-sectional shape of the rail. Gaps between the opening in the post and the rail, once the rail is inserted into the post, are minimized so as to prevent insects from gaining access to the inside of the post. | 2012-08-23 |
20120211715 | SEMICONDUCTOR DEVICE INCLUDING PHASE CHANGE MATERIAL AND METHOD OF MANUFACTURING SAME - Disclosed herein is a device that includes: an interlayer insulation film having a through hole; and a phase change storage element provided in the through hole. The phase change storage element includes: an outer electrode being a conductive film of cylindrical shape and being formed along an inner wall of the through hole; a buffer insulation film being an insulation film of cylindrical shape and being formed along an inner wall of the outer electrode, an upper end of the buffer insulation film being recessed in part to form a recess; a phase change film filling an interior of the recess; and an inner electrode being a conductive film formed along an inner wall of the buffer insulation film including a surface of the phase change film. | 2012-08-23 |
20120211716 | Oxygen ion implanted conductive metal oxide re-writeable non-volatile memory device - A memory device having at least one layer of oxygen ion implanted conductive metal oxide (CMO) is disclosed. The oxygen ion implanted CMO includes mobile oxygen ions. The oxygen ion implanted CMO can be annealed and the annealing can optionally occur in an ambient. An insulating metal oxide (IMO) layer is in direct contact with the oxygenated CMO layer and is electrically in series with the oxygenated CMO layer. A two-terminal memory element is formed by the IMO and CMO layers. The oxygenated CMO layer includes additional mobile oxygen ions operative to improve data retention and cycling of the two-terminal memory element. As deposited, the CMO layer can lose mobile oxygen ions during the fabrication process and the ion implantation serves to increase a quantity of mobile oxygen ions in the CMO layer. | 2012-08-23 |
20120211717 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom. | 2012-08-23 |
20120211718 | SEMICONDUCTOR STORAGE DEVICE - There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory. | 2012-08-23 |
20120211719 | NONVOLATILE VARIABLE RESISTIVE DEVICE - According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode. | 2012-08-23 |
20120211720 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - According to example embodiments, a variable resistance memory device include an ohmic pattern on a substrate; a first electrode pattern including a first portion that has a plate shape and contacts a top surface of the ohmic pattern and a second portion that extends from one end of the first portion to a top; a variable resistance pattern electrically connected to the first electrode pattern; and a second electrode pattern electrically connected to the variable resistance pattern, wherein one end of the ohmic pattern and the other end of the first portion are disposed on the same plane. | 2012-08-23 |
20120211721 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor storage device according to an embodiment includes: stacking a first wiring layer; stacking a memory cell layer on the first wiring layer; and stacking a stopper film on the memory cell layer. The method of manufacturing a semiconductor storage device also includes: etching the stopper film, the memory cell layer, and the first wiring layer; polishing an interlayer insulating film to the stopper film after burying the stopper film, the memory cell layer, and the first wiring layer with the interlayer insulating film; performing a nitridation process to the stopper film and the interlayer insulating film to form an adjustment film and a block film on surfaces of the stopper film and the interlayer insulating film, respectively; and forming a second wiring layer on the adjustment film, the second wiring layer being electrically connected to the adjustment film. | 2012-08-23 |
20120211722 | THREE-DIMENSIONAL MEMORY ARRAY STACKING STRUCTURE - A memory device includes a planar substrate, a plurality of horizontal conductive planes above the planar substrate, and a plurality of horizontal insulating layers interleaved with the plurality of horizontal conductive planes. An array of vertical conductive columns, perpendicular to the pluralities of conductive planes and insulating layers, passes through apertures in the pluralities of conductive planes and insulating layers. The memory device includes a plurality of programmable memory elements, each of which couples one of the horizontal conductive planes to a respective vertical conductive column. | 2012-08-23 |
20120211723 | GRAPHENE-CONTAINING SEMICONDUCTOR STRUCTURES AND DEVICES ON A SILICON CARBIDE SUBSTRATE HAVING A DEFINED MISCUT ANGLE - A semiconductor structure having a high Hall mobility is provided that includes a SiC substrate having a miscut angle of 0.1° or less and a graphene layer located on an upper surface of the SiC substrate. Also, provided are semiconductor devices that include a SiC substrate having a miscut angle of 0.1° or less and at least one graphene-containing semiconductor device located atop the SiC substrate. The at least one graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the SiC substrate. | 2012-08-23 |
20120211724 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting layer includes at least one quantum well, and the quantum well adjacent to the p-type semiconductor layer includes a first barrier layer and a second barrier layer, the first barrier layer nearer to the p-type semiconductor layer being doped with p-type impurity. | 2012-08-23 |
20120211725 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure | 2012-08-23 |
20120211726 | Forming A Non-Planar Transistor Having A Quantum Well Channel - In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer wrapped around the QW layer. Other embodiments are described and claimed. | 2012-08-23 |
20120211727 | Method of Producing Precision Vertical and Horizontal Layers in a Vertical Semiconductor Structure - The present invention relates to providing layers of different thickness on vertical and horizontal surfaces ( | 2012-08-23 |
20120211728 | Light-Emitting Element, Light-Emitting Device, and Electronic Appliance - By use of a 2,9,10-triaryl anthracene derivative in which a diarylamino-substituted aryl group is bonded to the 2-position of a 9,10-diarylanthracene for a light-emitting element, a light-emitting element having high efficiency can be obtained. The emission wavelength of the anthracene derivative is suitable for use in a white light-emitting element. By use of the anthracene derivative for a white light-emitting element, a white light-emitting element having high efficiency can be obtained. | 2012-08-23 |
20120211729 | POLYMER LIGHT-EMITTING DEVICE - The problem to be solved of the present invention is to provide a polymer light-emitting device having a long luminance half-decay lifetime. Means for solving the problem is a polymer light-emitting device in which the cathode comprises a first cathode layer and a second cathode layer in this order from a light-emitting layer side, the first cathode layer contains one or more metal compounds selected from the group consisting of sodium fluoride, potassium fluoride, rubidium fluoride and cesium fluoride, and the second cathode layer contains one or more metals selected from the group consisting of alkaline earth metals and aluminum, and in which a functional layer between an anode and the light-emitting layer contains a polymer compound including a repeating unit represented by the formula (1): | 2012-08-23 |
20120211730 | Hole Blocking Layer and Method for Producing Same, and Photoelectric Conversion Element Comprising the Hole Blocking Layer and Method for Manufacturing Same - Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member. | 2012-08-23 |
20120211731 | NOVEL ADDUCT COMPOUND, METHODS FOR PURIFICATION AND PREPARATION OF FUSED POLYCYCLIC AROMATIC COMPOUND, SOLUTION FOR FORMATION OF ORGANIC SEMICONDUCTOR FILM, AND NOVEL ALPHA-DIKETONE COMPOUND - Provided are a novel adduct compound and a novel α-diketone compound, from which organic semiconductor layers consisting of a fused polycyclic aromatic compound can be formed by a solution method, said solution method being generally easier than a deposition method. Also provided are a method for the purification of the adduct compound, and a solution for the formation of organic semiconductor film, which contains the adduct compound. The adduct compound has a structure wherein a compound having a double bond is added in an eliminable state to a fused polycyclic aromatic compound of general formula (I): Ar | 2012-08-23 |
20120211732 | SEMICONDUCTING POLYMER - A semiconducting polymer formed from an insulator polymer and an ionic liquid is disclosed. In at least one embodiment, the semiconducting polymer may be formed from a homogenous blend of two or more insulator polymers and two or more ionic liquids. The homogenous mixture of non-conducting polymers and ionic liquid may be formed as a film of semiconducting polymer with a controllable thickness. The semiconducting polymer may be used in a multitude of different applications, including, but not limited to, storage devices. | 2012-08-23 |
20120211733 | ORGANIC LIGHT EMITTING DEVICE AND FLAT PANEL DISPLAY DEVICE COMPRISING THE SAME - Provided are an organic light emitting device including: a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode and including an emission layer, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a semitransparent or transparent electrode, and wherein the organic layer includes a layer having at least one of the compounds having at least one carbazole group, and a flat panel display device including the organic light emitting device. The organic light emitting device has low driving voltage, excellent current density, high brightness, excellent color purity, high efficiency, and long lifetime. | 2012-08-23 |
20120211734 | SUBSTITUTED PYRENES AND ASSOCIATED PRODUCTION METHODS FOR LUMINESCENT APPLICATIONS - A substituted pyrene for electroluminescent applications and a method to produce the substituted pyrenes. | 2012-08-23 |
20120211735 | ORGANIC EL ELEMENT AND ORGANIC LIGHT-EMITTING DEVICE - To provide an organic EL element having high efficiency and long life, without accumulating holes at the interface between a light-emitting layer and a layer on the cathode side, and an organic light-emitting device. | 2012-08-23 |
20120211736 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1: | 2012-08-23 |
20120211737 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In view of the problem that an organic semiconductor layer of an organic TFT is likely to deteriorate due to water, light, oxygen, or the like, it is an object of the present invention to simplify a manufacturing step and to provide a method for manufacturing a semiconductor device having an organic TFT with high reliability. According to the invention, a semiconductor layer containing an organic material is formed by patterning using a mask, and thus an organic TFT is completed in the state where the mask is not removed but to remain over the semiconductor: layer. In addition, a semiconductor layer can be protected from deterioration due to water, light, oxygen, or the like by using the remaining mask. | 2012-08-23 |
20120211738 | Quinoxaline Derivative, and Light Emitting Element, Light Emitting Device, and Electronic Appliance Using the Same - A quinoxaline derivative expressed by the general formula (1) is provided. (Each of R | 2012-08-23 |
20120211739 | ORGANIC ELECTRONIC DEVICE - The organic electronic device prevents short-circuiting between electrodes and improves lifetime without deteriorating transmittance, driving voltage stability and storage stability thereof. The organic electronic device has a substrate and provided thereon, a first electrode and a second electrode opposed to each other and at least one organic functional layer located between the first and second electrodes. At least one of the first and second electrodes has an electrically conductive polymer-containing layer containing a hydrophilic polymer binder and an electrically conductive polymer having a π conjugated electrically conductive polymer component and a polyanion component. At least a part of the electrically conductive polymer-containing layer is subjected to crosslinking, and the electrically conductive polymer-containing layer has been subjected to wet washing treatment. | 2012-08-23 |
20120211740 | Method for Fabricating Organic Devices - The present invention relates to a method for fabricating an organic device, said method comprising: (i) Providing a substrate ( | 2012-08-23 |
20120211741 | ORGANIC PHOTOVOLTAIC CELL - Provided is an organic photovoltaic cell having high photovoltaic efficiency. The photovoltaic cell of the present invention comprises an anode, a cathode, and an organic active layer provided between the anode and the cathode. The organic active layer comprises a multiexciton generator. For the multiexciton generator, a compound semiconductor comprising one or more elements selected from among Cu, In, Ga, Se, S, Te, Zn and Cd is used. The photovoltaic cell preferably has multiple energy levels in the energy gap of the compound semiconductor. The compound semiconductor is preferably a nanosize particle, and preferably has a p-type semiconductor adhering on the surface thereof. | 2012-08-23 |
20120211742 | NOVEL FLUORENYLAMINE COMPOUND, ORGANIC LIGHT EMITTING DEVICE CONTAINING THE SAME, MATERIAL FOR ORGANIC LIGHT EMITTING DEVICE, DISPLAY APPARATUS, AND IMAGE INPUT APPARATUS - A novel fluorenylamine compound represented by a general formula below, where R | 2012-08-23 |
20120211743 | BENZO[k]FLUORANTHENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE CONTAINING THE SAME - A benzo[k]fluoranthene derivative represented by the following formula (1): | 2012-08-23 |
20120211744 | SEMICONDUCTOR DEVICE - It is an object to reduce concentration of an electric field on an end of a drain electrode of a semiconductor device. A semiconductor device includes an oxide semiconductor film including a first region and a second region; a pair of electrodes which is partly in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode that overlaps with part of one of the pair of electrodes and the first region with the gate insulating film provided therebetween. At least part of the first region and part of the second region are between the pair of electrodes. The gate electrode does not overlap with the other of the pair of electrodes. | 2012-08-23 |
20120211745 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms. | 2012-08-23 |
20120211746 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on the gate insulating layer, an auxiliary pattern on the oxide semiconductor layer, and source and drain electrodes on the auxiliary pattern, the source and drain electrodes being disposed over the auxiliary pattern and spaced apart from each other to expose a portion of the auxiliary pattern, the exposed portion of the auxiliary pattern exposing a channel region and including a metal oxide over the channel region, wherein a data line crosses the gate line to define the pixel region and is connected to the source electrode, a passivation layer on the source and drain electrodes and the data line. | 2012-08-23 |
20120211747 | PN JUNCTIONS AND METHODS - A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area. | 2012-08-23 |
20120211748 | Method of Dicing a Wafer - A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface. | 2012-08-23 |
20120211749 | SEMICONDUCTOR DEVICE - To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element. | 2012-08-23 |
20120211750 | SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME - A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the semiconductor layer with the first insulating layer sandwiched in between, a second insulating layer which is formed on the first insulating layer and covers the gate electrode, and a capacitor electrode which is formed on the second insulating layer and has a portion facing the gate electrode with the second insulating layer sandwiched in between. The second insulating layer has a thin portion, whose thickness is thinner than that of the second insulating layer in surrounding regions, on the portion of the gate electrode overlapping the channel region. A part of the capacitor electrode faces the portion of the gate electrode overlapping the channel region with the thin portion of the second insulating layer sandwiched in between. | 2012-08-23 |
20120211751 | Display Apparatus and Method of Manufacturing the Same - A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode disposed on the substrate, a gate dielectric layer disposed on the substrate and the gate electrode, an oxide semiconductor pattern disposed on the gate dielectric layer, a first insulating pattern disposed on the oxide semiconductor pattern that overlaps the gate electrode, a second insulating pattern disposed on the oxide semiconductor pattern and spaced apart from the first insulating pattern, source and drain electrodes spaced apart from each other on the oxide semiconductor pattern, a pixel electrode pattern disposed on the second insulating pattern to make contact with the source electrode, and a channel area defined where the oxide semiconductor pattern overlaps the gate electrode. A high carrier mobility channel is formed in the channel area when a turn-on voltage is applied to the gate electrode. | 2012-08-23 |
20120211752 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device including a plurality of scan lines and a plurality of data lines crossing the scan lines, a plurality of pixels at regions defined by the scan lines and the data lines, and one or more thin-film transistors (TFTs) for selectively applying voltages to each of the pixels, wherein the data lines are successively located at a side of the pixels, and a first TFT of the TFTs is located at least partially between an area corresponding to an n | 2012-08-23 |
20120211753 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE - In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified. | 2012-08-23 |
20120211754 | ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode. | 2012-08-23 |
20120211755 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY - Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor. | 2012-08-23 |
20120211756 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate includes: a plurality of display areas, an outer area of the display area, in which a common wiring and an external connection terminal, which is connected to one of the scanning wiring, the signal wiring, and the common wiring, are provided; a connection wiring, which connects the external connection terminal with the common wiring of an adjacent display panel; and a connection part, which has a contact hole provided at the common wiring of the adjacent display panel, wherein the connection wiring is disposed across the cutting position of the insulation substrate and is connected to the contact hole at the connection part, and wherein the connection part is disposed at an area, at which a sealing member to bond an opposite substrate disposed to face the display area, or the inner side of the sealing member, which is the display area side. | 2012-08-23 |
20120211757 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible. | 2012-08-23 |
20120211758 | THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions. | 2012-08-23 |
20120211759 | STRUCTURE AND METHOD TO REDUCE WAFER WARP FOR GALLIUM NITRIDE ON SILICON WAFER - The present disclosure provides a semiconductor structure. The semiconductor structure includes a dielectric material layer on a silicon substrate, the dielectric material layer being patterned to define a plurality of regions separated by the dielectric material layer; a first buffer layer disposed on the silicon substrate; a heterogeneous buffer layer disposed on the first buffer layer; and a gallium nitride layer grown on the heterogeneous buffer layer only within the plurality of regions. | 2012-08-23 |
20120211760 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS - A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer. | 2012-08-23 |
20120211761 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide. | 2012-08-23 |
20120211762 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT - A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip. | 2012-08-23 |
20120211763 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. | 2012-08-23 |
20120211764 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material. | 2012-08-23 |
20120211765 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT - Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride. | 2012-08-23 |
20120211766 | IMAGE DISPLAY DEVICE AND LIGHT EMISSION DEVICE - An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements. | 2012-08-23 |
20120211767 | POWER CONVERTER - The present power converter includes a power conversion semiconductor device, an electrode connection conductor which electrically connects multiple electrodes having the same potential, and also has a generally flat upper surface for electrically connecting to an exterior portion, and a sealing material provided so as to cover the power conversion semiconductor device, and also to expose the generally flat upper surface of the electrode connection conductor. | 2012-08-23 |
20120211768 | WIDE-BAND-GAP REVERSE-BLOCKING MOS-TYPE SEMICONDUCTOR DEVICE - A wide-band-gap reverse-blocking MOS-type semiconductor device includes a SiC n | 2012-08-23 |
20120211769 | Sic single crystal wafer and process for production thereof - A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×10 | 2012-08-23 |
20120211770 | SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTURING THEM - There are provided a semiconductor device of low cost and high quality, a combined substrate used for manufacturing the semiconductor device, and methods for manufacturing them. The method for manufacturing the semiconductor device includes the steps of: preparing a single-crystal semiconductor member; preparing a supporting base; connecting the supporting base and the single-crystal semiconductor member to each other through a connecting layer containing carbon; forming an epitaxial layer on a surface of the single-crystal semiconductor member; forming a semiconductor element using the epitaxial layer; separating the single-crystal semiconductor member from the supporting base by oxidizing and accordingly decomposing the connecting layer after the step of forming the semiconductor element; and dividing the single-crystal semiconductor member separated from the supporting base. | 2012-08-23 |
20120211771 | LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. | 2012-08-23 |
20120211772 | ARRAY SUBSTRATE, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a substrate, a dummy pad and a driving signal output line. The substrate includes a display area displaying an image, and a peripheral area surrounding the display area. The dummy pad extends along a first direction in the peripheral area of the substrate, and includes a first protrusion portion protruding from an end portion of the dummy pad along the first direction. The driving signal output line extends along a second direction crossing with the first direction, is disposed adjacent to the dummy pad, and provides an external signal. Accordingly static electricity provided to the driving signal output line flows into the dummy pad having the first protrusion portion, so that static electricity may be prevented from flowing into the display area. | 2012-08-23 |
20120211773 | LIGHT-EMITTING DEVICES COMPRISING NON-LINEAR ELECTRICALLY PROTECTIVE MATERIAL - A circuit comprising an array of light emitting diodes (LEDs), and a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs. The layer of VSD material is able to switch into a carrying current state in response to either of the forward or reverse surge exceeding a characteristic voltage level (V | 2012-08-23 |
20120211774 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD - A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer located between an optical plate and the chip so as to extend from the optical plate toward the chip, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate. | 2012-08-23 |
20120211775 | Lighting Device - A lighting device having a novel structure for integration of a plurality of light-emitting elements, and a manufacturing method thereof are provided. In the lighting device, a plurality of light-emitting elements is electrically connected to each other through plugs (connecting members) and a connection wiring for integration. The connection wiring is provided on a counter substrate and the plugs are provided over an element substrate or for the counter substrate. Such a connection structure enables an appropriate electrical connection between the plurality of light-emitting elements in the lighting device. | 2012-08-23 |
20120211776 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An organic electroluminescence display device is provided. The organic electroluminescence display device includes plural organic electroluminescence elements. Each organic electroluminescence element includes: a lower electrode; an insulating layer having an opening, in which a lower electrode is exposed at the bottom of the opening; an auxiliary wiring; a stacked structure provided from a portion over the lower electrode exposed at the bottom of the opening to a portion of the insulating layer surrounding the opening, including a light emitting layer made of an organic light-emitting material; and an upper electrode. At least one layer of the stacked structure partially contacts the auxiliary wiring. The insulating layer and the auxiliary wiring are provided in common to the plurality of organic EL elements. The upper electrode covers the whole surface of the stacked structures and the auxiliary wiring. | 2012-08-23 |
20120211777 | FLAT PANEL DISPLAY AND METHOD OF FABRICATING THE SAME - A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material. | 2012-08-23 |
20120211778 | LED PACKAGE FOR UNIFORM COLOR EMISSION - A light emitting diode package for one or more light emitting diodes mounted on a substrate. A frame is disposed on at least a portion of the substrate and substantially surrounds, but does not contact, the light emitting diode. The frame is substantially transparent to light emitted from the light emitting diode and includes one or more first wavelength converting materials. The wavelength converting materials, which may be one or more phosphors, convert at least a portion of light emitted at the emission wavelength to different wavelength. A cover covers the light emitting diode within the frame. The cover layer includes one or more second wavelength converting materials differing from the first one or more wavelength converting materials in wavelength converting material concentration or in converted light wavelength or in combinations of wavelength converting materials. | 2012-08-23 |
20120211779 | LIGHT EMITTING DEVICE - A light emitting device includes a white light emitting unit including a first light source emitting a white light; a red light emitting unit including a second light source emitting a white light and a red coating member having a red fluorescent material which converts the white light from the second light source into a red light; and a green light emitting unit including a third light source emitting a white light and a green coating member having a green fluorescent material which converts the white light from the third light source into a green light. The light emitting device further includes a driver for individually driving the white, the red and the green light emitting unit. | 2012-08-23 |
20120211780 | LED PACKAGE MODULE - An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion. | 2012-08-23 |
20120211781 | LIGHT EMITTING DEVICE - The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. | 2012-08-23 |
20120211782 | ORGANIC ELECTROLUMINESCENT ELEMENT AND DISPLAY INCLUDING SAME - An organic electroluminescent element includes a first electrode, an organic compound film including a plurality of layers that include an emissive layer, a second electrode, a protective layer, and a buffer layer formed by an evaporation method between the second electrode and the protective layer, light emitted from the emissive layer emerging from the second electrode side, in which the second electrode is formed of a metal film having a thickness of 5 nm to 20 nm, a distance between a surface of the emissive layer adjacent to the first electrode and a surface of the second electrode adjacent to the organic compound film is in the range of 55 nm to 90 nm, and the protective layer is formed by a sputtering method or a plasma-enhanced chemical vapor deposition method. | 2012-08-23 |