35th week of 2015 patent applcation highlights part 61 |
Patent application number | Title | Published |
20150243799 | Device Packaging Method and Device Package Structure - A device package method and structure thereof. The method includes steps of: providing a base and a cover, and placing a sensing device on the bottom of cavity base; placing sealant between the cover and edge part of the base, and then covering the cover on the base; irradiating a laser on the edge part for melting the sealant, so as to bond the cover and edge part; and enabling the sealed space formed between the cover and the cavity base to be in vacuum. Therefore, sensing element with high sensitivity can be packaged and manufactured efficiently. | 2015-08-27 |
20150243800 | Ge/Si Avalanche Photodiode With Integrated Heater And Fabrication Thereof - Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level. | 2015-08-27 |
20150243801 | ELECTRODE PROVIDED WITH UBM STRUCTURE AND METHOD FOR PRODUCING SAME - A problem addressed by an embodiment of the present invention lies in providing a UBM structure which includes thin layers and can prevent diffusion of solder into an electrode. The UBM structure according to an embodiment of the present invention includes: a first UBM layer on an electrode, a second UBM layer on the first UBM layer, and a passivated metal layer between the first UBM layer and the second UBM layer. The passivated metal layer functions as a barrier layer with respect to solder diffusion. | 2015-08-27 |
20150243802 | LIGHT RECEIVING AND EMITTING ELEMENT AND SENSOR DEVICE USING SAME - A light receiving and emitting element includes a substrate; a light emitting element formed on an upper face of the substrate; a light receiving element formed on an upper face side of the substrate; a light emitting element-side first electrode pad; and a metal lump joined to the light emitting element-side first electrode pad. The light emitting element-side electrode pad is disposed the upper face of the substrate through an insulating layer so that the metal lump blocks light emitted from the light emitting element and propagating toward the light receiving element. | 2015-08-27 |
20150243803 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 2015-08-27 |
20150243804 | PHOTOVOLTAIC SOLAR CELL AND METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL - A photovoltaic solar cell with a front face designed for coupling light, including at least one cutout ( | 2015-08-27 |
20150243805 | IMAGE SENSOR DEVICE AND METHOD FOR FORMING THE SAME - Embodiments of the disclosure provide an image sensor device. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, a light-sensing region close to the front surface, and a trench adjacent to the light-sensing region. The image sensor device includes a light-blocking structure positioned in the trench to absorb or reflect incident light. | 2015-08-27 |
20150243806 | METHOD FOR FABRICATING BACK-CONTACT TYPE SOLAR CELL - A method for fabricating back-contact type solar cells is provided. The method comprises forming a plurality of n-type doped zones, a plurality of p-type doped zones, and a back anti-reflection layer on a back surface of a semiconductor substrate. The lead-containing conductive paste may pass through the back anti-reflection layer and connect to the n-type doped zones and the p-type doped zones thereby being regarded as n-type electrodes and p-type electrodes. | 2015-08-27 |
20150243807 | GLASS COMPRISING TUNGSTEN AND LEAD IN A SOLAR CELL PASTE - In general, the invention relates to electro-conductive pastes comprising a glass which comprises Tungsten and Lead as a constituent of a solar cell paste, and the use of such in the preparation of photovoltaic solar cells. More specifically, the invention relates to electroconductive pastes, precursors, processes for preparation of solar cells, solar cells and solar modules. | 2015-08-27 |
20150243808 | GLASS COMPRISING MOLYBDENUM AND LEAD IN A SOLAR CELL PASTE - In general, the invention relates to electro-conductive pastes comprising a glass which comprises molybdenum and lead as a constituent of a solar cell paste, and the use of such in the preparation of photovoltaic solar cells. More specifically, the invention relates to electroconductive pastes, precursors, processes for preparation of solar cells, solar cells and solar modules. | 2015-08-27 |
20150243809 | TUNGSTEN-CONTAINING GLASS FRIT FOR ELECTROCONDUCTIVE PASTE COMPOSITION - An electroconductive paste composition including metallic particles, glass frit including lead oxide, silicon dioxide, and tungsten or a tungsten-containing compound, and an organic vehicle is provided. The invention also provides a solar cell produced by applying the electroconductive paste according to the invention to a silicon wafer and firing the silicon wafer. The invention further provides a solar cell module comprising electrically interconnected solar cells according to the invention. The invention also provides a method of producing a solar cell, including the steps of providing a silicon wafer having a front surface and a back surface, applying an electroconductive paste according to the invention to the silicon wafer, and firing the silicon wafer. | 2015-08-27 |
20150243810 | MOLYBDENUM-CONTAINING GLASS FRIT FOR ELECTROCONDUCTIVE PASTE COMPOSITION - An electroconductive paste composition including metallic particles, glass frit including lead oxide, silicon dioxide, and molybdenum or a molybdenum-containing compound, and an organic vehicle is provided. The invention also provides a solar cell produced by applying the electroconductive paste according to the invention to a silicon wafer and firing the silicon wafer. The invention further provides a solar cell module comprising electrically interconnected solar cells according to the invention. The invention also provides a method of producing a solar cell, including the steps of providing a silicon wafer having a front surface and a back surface, applying an electroconductive paste according to the invention to the silicon wafer, and firing the silicon wafer. | 2015-08-27 |
20150243811 | SILVER-LEAD-SILICATE GLASS FOR ELECTROCONDUCTIVE PASTE COMPOSITION - An electroconductive paste composition including metallic particles, glass frit including lead oxide, silicon dioxide, and silver or a silver-containing compound, and an organic vehicle is provided. The invention also provides a solar cell produced by applying the electroconductive paste according to the invention to a silicon wafer and firing the silicon wafer. The invention further provides a solar cell module comprising electrically interconnected solar cells according to the invention. The invention also provides a method of producing a solar cell, including the steps of providing a silicon wafer having a front surface and a back surface, applying an electroconductive paste according to the invention to the silicon wafer, and firing the silicon wafer. | 2015-08-27 |
20150243812 | SILVER NANOPARTICLE BASED COMPOSITE SOLAR METALLIZATION PASTE - Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver nanoparticles, silver microparticles, and nondeformable inorganic material particles. Specific formulations have been developed that yield printed lines with low porosities and high peel strengths. | 2015-08-27 |
20150243813 | SOLAR CELL, METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL MODULE - A solar cell, a method for manufacturing the same, and a solar cell module are discussed. The solar cell includes a semiconductor substrate including a plurality of first electrodes and a plurality of second electrodes, which are separated from each other on a back surface of the semiconductor substrate, and an insulating member including a first auxiliary electrode connected to the plurality of first electrodes and a second auxiliary electrode connected to the plurality of second electrodes on a front surface of the insulating member. The insulating member is positioned on portions of the first and second auxiliary electrodes disposed on the back surface of the semiconductor substrate, and also extends over non-formation portions of the first and second auxiliary electrodes. | 2015-08-27 |
20150243814 | HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS - Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell. | 2015-08-27 |
20150243815 | PHOTOVOLTAIC DEVICE WITH BACK SIDE CONTACTS - Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells. | 2015-08-27 |
20150243816 | METHODS OF MAKING BARRIER ASSEMBLIES - The present disclosure generally relates to methods of forming barrier assemblies. Some embodiments include application and removal of a protective layer followed by application of a topsheet. Some embodiments include application and removal of a protective layer including a release agent and a monomer. | 2015-08-27 |
20150243817 | SOLAR ANTENNA ARRAY AND ITS FABRICATION AND USES - A solar antenna array may comprise an array of randomly placed carbon nanotube antennas that may capture and convert sunlight into electrical power. Methods for constructing the solar antenna array may use a mold and self aligning processing steps to minimize cost. Designs may be optimized for capturing a broad spectrum of non-polarized light. Alternatively, the array may generate light, and when connected in to an array of independently controllable sections may operate as either a reflective or light transmitting display. | 2015-08-27 |
20150243818 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell module includes a cell forming operation of forming a plurality of first and second electrodes on a back surface of a semiconductor substrate to form each a plurality of solar cells, and a tabbing operation including at least one of a connection operation of performing a thermal process to respectively connect a first conductive line and a second conductive line to the first electrodes and the second electrodes of each solar cell using a conductive adhesive and an optional string forming operation of performing a thermal process to connect the first conductive line included in one solar cell and the second conductive line included in other solar cell adjacent to the one solar cell to an interconnect. The tabbing operation includes at least two thermal processes each having a different maximum temperature. | 2015-08-27 |
20150243819 | Micro-concentrator solar array using micro-electromechanical systems (MEMS) based reflectors - A micro-concentrator solar array is provided, and includes a plurality of solar cells and a plurality of micro-electromechanical systems (MEMS) based reflectors. Each solar cell includes a focal point. The MEMS based reflectors are each selectively tiltable about at least one axis to reflect a beam of light onto the focal point of one of the solar cells. | 2015-08-27 |
20150243820 | PHOTOELECTRIC CONVERSION APPARATUS AND DEVICE - The present disclosure relates to a photoelectric conversion apparatus. The photoelectric conversion apparatus includes a carbon nanotube layer, a first thermoelectric conversion layer, a second thermoelectric conversion layer, a first electrode and a second electrode. The carbon nanotube layer includes a plurality of carbon nanotubes. An areal density of the carbon nanotube layer is in a range from about 0.16 g/m | 2015-08-27 |
20150243821 | CONCENTRATOR PHOTOVOLTAIC UNIT, CONCENTRATOR PHOTOVOLTAIC MODULE, CONCENTRATOR PHOTOVOLTAIC PANEL, AND CONCENTRATOR PHOTOVOLTAIC APPARATUS - A concentrator photovoltaic unit being an optical system base unit includes: a concentrating portion configured to converge sunlight; a cell configured to receive light converged by the concentrating portion to generate power; a package including a frame portion, the frame portion having insulating property and surrounding the cell, the package being in integrated relation with the cell; a shield plate provided between the concentrating portion and the cell, and including an opening allowing light converged by the concentrating portion to selectively pass therethrough; and a protection plate being a heat-resistant member provided on the frame portion to make the cell expose to the light and to shield the package, the protection plate being in contact with nothing but the frame portion, and securing a predetermined insulation distance from a live portion of the cell. | 2015-08-27 |
20150243822 | Modular Self-Tracking Micro-Concentrator For Space Power - Technologies for a micro-concentrator modular array. The micro-concentrator modular array may include two or more micro-concentrator solar modules. One or more of the micro-concentrator solar modules may be removable from the micro-concentrator modular array. Micro-concentrator solar modules may be added to a micro-concentrator modular array. One or more of the micro-concentrator solar modules may be electrically and/or mechanically connected to other micro-concentrator solar modules. To facilitate an electrical connection, a conductive connector may be used to connect an electrical output of one micro-concentrator solar module with an electrical input of another micro-concentrator solar module. | 2015-08-27 |
20150243823 | Device having at least Two Wafers for Detecting Electromagnetic Radiation and Method for Producing said Device - An arrangement of at least two wafers for detecting electromagnetic radiation, in particular far infrared radiation, comprises a first wafer and a second wafer. The first wafer includes a microsystem formed as a sensor array. The microsystem is configured to register electromagnetic radiation and provide a corresponding sensor signal. The second wafer includes an integrated circuit formed as an evaluation circuit that is coupled to the sensor array. The integrated circuit is configured to detect the electromagnetic radiation with the aid of the sensor signal provided. | 2015-08-27 |
20150243824 | OPTICAL SENSOR HAVING A LIGHT EMITTER AND A PHOTODETECTOR ASSEMBLY DIRECTLY MOUNTED TO A TRANSPARENT SUBSTRATE - An optical sensor is described that includes a light emitter and a photodetector assembly directly attached to a transparent substrate. In one or more implementations, the optical sensor comprises at least one light emitter and a photodetector assembly (e.g., photodiodes, phototransistors, etc.). The light emitter(s) and the photodetector assembly are directly mounted (e.g., attached) to a transparent substrate. | 2015-08-27 |
20150243825 | SIMULTANEOUS DUAL-BAND DETECTOR - A radiation detector having a pair of adjacent mesas disposed on a common layer. The common layer comprises a first semiconductor layer having a first conductivity type and an energy bandgap responsive to radiation in a first spectral region. Each of the mesas comprises: a second semiconductor; and a third semiconductor layer disposed on the second semiconductor layer having the first conductivity type and an energy bandgap responsive to radiation in a second spectral region. The second semiconductor layer may have a conductivity type opposite the first conductivity type or the three layers may provide an nBn or pBp structure. The third semiconductor layer of the second mesa produces minority carriers, in response to the radiation in the second spectral region, flowing as unwanted carriers into the common layer towards the first mesa. A barrier region is disposed in the common layer to prevent the unwanted carriers from passing from the second mesa to the first mesa. | 2015-08-27 |
20150243826 | TUNABLE HETEROJUNCTION FOR MULTIFUNCTIONAL ELECTRONICS AND PHOTOVOLTAICS - Provided in one embodiment is a method for operating a photodiode device, which device comprises: at least one layer of an n-doped semiconductor material; two portions of a dielectric material separately disposed over separate regions of the at least one layer of the n-doped semiconductor material; at least one monolayer of a carbon-based material disposed between the two portions of dielectric material and over the at least one layer of the n-doped semiconductor material; two terminal electrodes, each electrode disposed in electrical communication with a respective one of the portions of dielectric material; and a gate electrode in electrical communication with the at least one layer of the n-doped semiconductor material. The method comprises: applying a voltage across the gate electrode and one of the two terminal electrodes; and exposing the photodiode device to electromagnetic radiation. | 2015-08-27 |
20150243827 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND TOUCH DISPLAY APPARATUS HAVING THE SAME - A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light. | 2015-08-27 |
20150243828 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin. | 2015-08-27 |
20150243829 | TOOLS AND METHODS FOR PRODUCING NANOANTENNA ELECTRONIC DEVICES - The present disclosure advances the art by providing a method and system for forming electronic devices. In particular, and by example only, methods are described for forming devices for harvesting energy in the terahertz frequency range on flexible substrates, wherein the methods provide favorable accuracy in registration of the various device elements and facilitate low-cost R2R manufacturing | 2015-08-27 |
20150243830 | METHOD OF MANUFACTURING THIN-FILM SOLAR CELL - A method of manufacturing a thin-film solar cell includes a first electrode forming step of forming a first electrode on a substrate; a first partition groove forming step of forming a first partition groove for dividing the first electrode and exposing a surface of the substrate in the first partition groove; a semiconductor layer forming step of forming a semiconductor layer on the first electrode and in the first partition groove; a second partition groove forming step of forming a second partition groove for dividing the semiconductor layer and exposing a surface of the first electrode in the second partition groove; a second electrode forming step of forming a second electrode on the semiconductor layer and in the second partition groove; and a third partition groove forming step of forming a third partition groove for dividing the second electrode and the semiconductor layer and exposing the surface of the first electrode in the third partition groove. At least one of the first partition groove forming step, the second partition groove forming step, and the third partition groove forming step includes an opening forming step of forming an opening in a partition groove forming layer where a partition groove is to be formed, by removing beforehand a part of the partition groove forming layer corresponding to a starting point from which the partition groove is formed, and thereby exposing a surface of a lower layer below the partition groove forming layer in the opening, and a partition groove forming step of bringing a needle into contact with the surface of the lower layer exposed in the opening and forming the partition groove by moving the needle in a predetermined direction. | 2015-08-27 |
20150243831 | ELECTRODEPOSITION OF THIN-FILM CELLS CONTAINING NON-TOXIC ELEMENTS - A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step. | 2015-08-27 |
20150243832 | TWO-PART SCREEN PRINTING FOR SOLAR COLLECTION GRID - Methods and apparatus relating to providing a collection grid suitable for use in PV modules. The disclosed collection grid may be at least partially applied to a protective laminate sheet in a manner that removes the high temperature requirements of conventional screen printed collection grids, to avoid unwanted heat-related deformation of the laminate sheet. | 2015-08-27 |
20150243833 | METHOD FOR PRODUCING THE ELECTRICAL CONTACTS OF A SEMICONDUCTOR DEVICE - A method for producing an electrical contact of a semiconductor device, including: depositing an optically transparent electrically conductive layer on a face of the device; depositing first and second dielectric layers on the layer, in which the second dielectric layer can be selectively laser etched; selectively laser etching the second dielectric layer, forming a first opening; producing a second opening aligned with the first opening in the first dielectric layer; depositing an electrically conductive material on the optically transparent electrically conductive layer through the second opening such that portions of the electrically conductive material are deposited on the second dielectric layer, around the first opening; and etching parts of the second dielectric layer which are not covered with portions of the electrically conductive material. | 2015-08-27 |
20150243834 | SOLAR CELL MODULE - Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes. | 2015-08-27 |
20150243835 | SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. in some embodiments, the individual semiconductor structures are simulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures. | 2015-08-27 |
20150243836 | METHOD FOR MAKING LIGHT EMITTING DIODES - A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures is formed on the second semiconductor pre-layer and the patterned mask layer is removed. The substrate is removed and a first electrode is formed on a surface of the first semiconductor layer away from the active layer. A second electrode is formed to electrically connect with the second semiconductor pre-layer. | 2015-08-27 |
20150243837 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; a first endcap contacting one of the first end or the second end; where the first endcap comprises a first semiconductor and where the first endcap extends from the one-dimensional nanoparticle to form a first nanocrystal heterojunction; and a second endcap that contacts the first endcap; where the second endcap comprises a second semiconductor and where the second endcap extends from the first endcap to form a second nanocrystal heterojunction; and where the first semiconductor is different from the second semiconductor. | 2015-08-27 |
20150243838 | LIGHT-EMITTING DIODE STRUCTURE HAVING PROGRESSIVE WORK FUNCTION LAYER - The present invention relates to an LED structure having a progressive work function layer, which adopts a conversion layer with a gradually varying work function as the medium for forming an Ohmic contact between the p-type GaN and the metal reflection layer. The work function of the conversion layer is not a single value. Instead, different quantities of dopants are doped at different depths of the conversion layer. Thereby, the conversion layer can match excellently the connected p-type GaN and the metal reflection layer. By taking advantage of the high light transmissivity of the material of the conversion layer, the possibility that light is absorbed by the Ohmic contact layer is reduced. The conversion according to the present invention can also block diffusion of the metal in the metal reflection to the p-type GaN. Accordingly, it can be used as both an Ohmic contact layer and a barrier layer. | 2015-08-27 |
20150243839 | FRONT-SIDE EMITTING MID-INFRARED LIGHT EMITTING DIODE - A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AlSb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate. | 2015-08-27 |
20150243840 | Strain Relief Superlattices and Optoelectronic Devices Including the Same - Structures for transitioning between two layers of differing lattice parameters are disclosed. In some embodiments, the structures are in the form of a superlattice that serves as a strain relieving transition between two layers of differing lattice parameters. By controlling the properties of the superlattice, the superlattice can exhibit desirable properties such as transparency to light and lattice matching to one of the two layers of differing lattice parameters. Optoelectronic devices such as light emitting diodes including such superlattices are also disclosed. | 2015-08-27 |
20150243841 | Semiconductor Structure with Stress-Reducing Buffer Structure - A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled. | 2015-08-27 |
20150243842 | LIGHT EMITTING DEVICE INCLUDING SHAPED SUBSTRATE - Embodiments of the invention include a semiconductor structure ( | 2015-08-27 |
20150243843 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF - The present invention relates to a semiconductor device capable of emitting light upon application of voltage and a method for manufacturing the same, and more particularly to a semiconductor device having a polygonal or circular columnar shape and a method for manufacturing the same. The semiconductor device of the present invention comprises a plurality of semiconductor structures and a connecting support layer that supports the plurality of the semiconductor structures, wherein each of the plurality of the semiconductor structures comprises a P-type first semiconductor layer, an N-type second semiconductor layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer, and forms a column having a polygonal or circular shape. | 2015-08-27 |
20150243844 | WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack, including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. | 2015-08-27 |
20150243845 | LIGHT-EMITTING DEVICE - A light-emitting element comprises a light-emitting stacked structure. The light-emitting stacked structure comprises a first type semiconductor layer; an active layer on the first type semiconductor layer; a second type semiconductor layer on the active layer; and a superlattice structure between the active layer and the second type semiconductor layer, comprising a first doped nitride layer and a first undoped nitride layer on the first doped nitride layer. | 2015-08-27 |
20150243846 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package including a first electrode pad and a second electrode pad formed to contact a lower surface of a light emitting device; a bonded insulating layer pattern formed to at least partially cover side surfaces and lower surfaces of the first electrode pad and the second electrode pad; a substrate, in which via holes are formed which penetrate the substrate from a first surface of the substrate that contacts a lower surface of the bonded insulating layer pattern to a second surface of the substrate that is opposite to the first surface; a through-electrode disposed in each via hole and contacting the lower surface of one of the respective first electrode pad and the second electrode pad; and a through-electrode insulating layer formed between the through-electrode and the substrate, and having an upper surface that contacts a portion of the lower surface of the bonded insulating layer pattern. | 2015-08-27 |
20150243847 | HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack. | 2015-08-27 |
20150243848 | LIGHT-EMITTING DEVICES WITH THROUGH-SUBSTRATE VIA CONNECTIONS - Multiple through-substrate vias (TSVs) are used to make electrical connections for an LED formed over a substrate. A first TSV extends through the substrate from a back surface of the substrate to the front surface of the substrate and includes a first TSV conductor that electrically connects to a first cladding layer of the LED. A second TSV extends through the substrate and an active layer of the LED from the back surface of the substrate to a second cladding layer or an ITO layer. The second TSV includes an isolation layer that electrically isolates a second TSV conductor from the first cladding layer and the active layer. Additionally dummy TSVs may be formed to conduct heat away from the LED optionally through a package substrate. | 2015-08-27 |
20150243849 | QUANTUM DOT LIGHT-EMITTING DIODE DISPLAY DEVICE - A quantum dot light-emitting diode display device is disclosed which includes: a substrate; a light emission diode layer stacked on the substrate and configured to emit light, the light emission diode layer including a cathode, a quantum dot light-emitting layer formed on the cathode to include quantum dots, and an anode formed on the quantum dot light-emitting layer; at least one electrode of the quantum dot light emission diode layer based on carbon; at least one scan line; at least one data line; at least one power line; and a field-effect transistor connected to the light emission diode layer. | 2015-08-27 |
20150243850 | Optoelectronic Semiconductor Component and Method for Producing a Mirror Region on a Semiconductor Body - A method for manufacturing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the component comprises a semiconductor body having a main surface and a mirror region adjoining the main surface of the semiconductor body at least regionally, wherein the minor region has a plurality of domains of a first material composition, the domains being spaced apart from one another and adjoining the main surface, wherein the mirror region comprises a continuous mirror layer of a second material composition, and wherein the mirror layer adjoins the main surface at least regionally between the domains. | 2015-08-27 |
20150243851 | LIGHT-EMITTING DIODE PACKAGE - Disclosed is a light-emitting diode package according to an embodiment, including; a body having a cavity formed therein, a lead frame placed in the cavity; and a light emitting diode electrically connected to the lead frame while having a slope angle relative to the bottom surface of the cavity, wherein a light emitting part and a non-light emitting part are present on the light emitting diode, and wherein a connection part is provided in a region of the cavity to be connected to at least a region of the non-light emitting part. | 2015-08-27 |
20150243852 | LED chip-on-board component and lighting module - An object of the present invention is to provide a Light Emitting Diode (LED) construction. It is an object of certain embodiments of the present invention to provide an LED Chip-on-Board (COB) construction comprising, a thermally and electrically conductive substrate, at least one semiconductor light emitting die or diode and an electrically insulating material. It is an aspect of certain embodiments that the at least one semiconductor light emitting die bonded to the thermally and electrically conductive substrate. Additionally, the construction comprises an anode or cathode electrode on the insulating material, wherein said anode or cathode electrodes are wire bonded to a first side of the semiconductor light emitting die's electrical contact, and the opposite side of the semiconductor light emitting chip is either anode or cathode. Furthermore, wherein the semiconductor device is encapsulated with an optical encapsulate. The present invention has particular use with red and far red spectrum LED constructions. | 2015-08-27 |
20150243853 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A method of manufacturing a light emitting diode (LED) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material. | 2015-08-27 |
20150243854 | LIGHT-EMITTING APPARATUS, LED ILLUMINATION APPARATUS, AND METHOD FOR MANUFACTURING PHOSPHOR-CONTAINING FILM PIECE USED IN LIGHT-EMITTING APPARATUS - Provided are: a lower-cost light-emitting apparatus with improved properties, as an LED device for illumination or an LED illumination apparatus such as an LED bulb, by eliminating interaction between phosphors and using a structure and mechanism design with optimized conditions; and a method for manufacturing the same. The present invention is a light-emitting apparatus including: a semiconductor light-emitting element that emits blue light, purple light or ultraviolet light; and a phosphor that is excited by light of the semiconductor light-emitting element to emit intrinsic light, wherein the apparatus has a specific structure, namely a phosphor separate-type structure, in which two or more kinds of phosphors of different luminous colors are used out of a blue phosphor for emitting blue light, a green phosphor for emitting green light, a yellow phosphor for emitting yellow light and a red phosphor for emitting red light as the intrinsic light, and the two or more kinds of phosphors are disposed in a lateral direction in such a state as not to vertically overlap with each other, to suppress interaction between the phosphors. | 2015-08-27 |
20150243855 | LIGHT-EMITTING SEMICONDUCTOR COMPONENT - The invention relates to a light-emitting semiconductor component, having: - a light-emitting semiconductor chip ( | 2015-08-27 |
20150243856 | ULTRAVIOLET LIGHT EMITTING DEVICE - An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element ( | 2015-08-27 |
20150243857 | Optoelectronic Semi-Conductor Component - An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body. | 2015-08-27 |
20150243858 | Surface Treatment Agent For Optical Material, And Optical Material - A surface treatment agent for an optical material comprising an organic silicon compound having a functional group selected from a highly polar functional group, a hydroxyl group-containing group, a silicon atom-containing hydrolyzable group, or metal salt derivatives thereof bonded to silicon atoms directly or via a functional group with a valency of (n+1) (n is a number equal to 1 or greater); and having at least one structure in the molecule in which the silicon atoms are bonded to any siloxane unit represented by R | 2015-08-27 |
20150243859 | Optoelectronic Device, Optical Element and Method for Producing Same - A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof. | 2015-08-27 |
20150243860 | LIGHT-EMITTING DEVICE - A light-emitting device including a first substrate, a second substrate disposed above the first substrate a barrier structure disposed on the first substrate and surrounding the second substrate, at least one light-emitting semiconductor unit disposed on the second substrate and a glue disposed between the light-emitting semiconductor unit and the barrier structure is provided. The barrier structure is separated from the second substrate by a distance R in a direction parallel to the first substrate. At least one portion of the glue is filled into the distance R between the barrier structure and the second substrate. | 2015-08-27 |
20150243861 | SEMICONDUCTOR LIGHTING MODULE PACKAGE - A semiconductor lighting module package includes a substrate, a lead frame located on the substrate, and a semiconductor lighting element. The lead frame has a carrier portion and a connecting portion spaced from the carrier portion. The semiconductor lighting element is electrically connected with the carrier portion and the connecting portion respectively. A plurality of nanoscale reflectors are formed on the carrier portion. A plurality of nanoscale reflectors are formed on the connecting portion. Shapes of the nanoscale reflectors formed on the carrier portion are different from shapes of the nanoscale reflectors formed on the connecting portion. | 2015-08-27 |
20150243862 | Light-Emitting Diode and Fabrication Method Thereof - A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer. | 2015-08-27 |
20150243863 | PACKAGE SUPPORT, FABRICATION METHOD AND LED PACKAGE - A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties. | 2015-08-27 |
20150243864 | Method for Manufacturing Optical Device and Optical Device Manufactured by Same - The present invention relates to a method for manufacturing an optical device and to an optical device manufactured by the method, in which heat-dissipating performance by a heat sink and thermal insulation performance between a substrate and the heat sink are improved and workability is enhanced. According to a first characteristic of the present invention, the method for manufacturing an optical device comprises: (a) a step of preparing a disk for an optical device having a vertical thermal insulation layer; (b) a step of forming a groove along a cut line formed on the lower surface of the disk for an optical device; (c) a step of applying liquid insulation material to the surface on which the groove is formed and hardening the liquid insulation material to form an electrically insulating layer having a planar surface; and (d) a step of forming a fixing hole penetrating in a vertical direction through both the disk for an optical device and the groove. | 2015-08-27 |
20150243865 | Light-emitting Diode Device - A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part. | 2015-08-27 |
20150243866 | THERMOELECTRIC GENERATOR - A thermoelectric generator has a module chamber defined between an exhaust pipe portion and a coolant pipe. A thermoelectric conversion module and an HC sensor are located in the module chamber. An ECU performs a fault diagnosis on the thermoelectric generator by detecting the leakage of exhaust gas into the module chamber from the exhaust pipe portion based on detection information output by the HC sensor. | 2015-08-27 |
20150243867 | DEVICE AND METHOD FOR THERMOELECTRONIC ENERGY CONVERSION - A thermoelectronic energy converter device ( | 2015-08-27 |
20150243868 | THERMOELECTRIC DEVICES HAVING REDUCED THERMAL STRESS AND CONTACT RESISTANCE, AND METHODS OF FORMING AND USING THE SAME - A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface. The punch can be removed, a powder precursor of the second cap loaded onto that surface, the first punch assembled to the die, and a third pre-load applied to form a third pre-pressed structure. The third pre-pressed structure can be sintered to form the thermoelectric material; the first or second cap can be coupled to an electrical connector. | 2015-08-27 |
20150243869 | SELF DOPING MATERIALS AND METHODS - A an organic material is shown including a conjugated core, one or more electron donating moieties, and a non-conjugated spacer coupled between the conjugated core and the electron donating moiety. Methods of forming the organic material include solution based processing. One example of an organic material includes a self-doping n-type organic material. | 2015-08-27 |
20150243870 | Compact high power density thermoelectric generator - A compact high power density thermoelectric generator for producing electric power from a hot fluid heat source. In preferred embodiments the HPD TEGs provide a wide range of electric power generators with a large range of outputs utilizing a modular approach featuring: (1) a basic building TEG block which can be combined with a number of the same type of building blocks to provide (2) a basic TEG section and a number of these basic TEG sections can be combined to provide this wide range of (3) HPD TEG systems. In these preferred embodiments the heat sources could include the exhaust of a truck, car boat, and other generators engines. | 2015-08-27 |
20150243871 | HYBRID SOLAR DEVICE FOR PRODUCING ELECTRICITY HAVING AN INCREASED LIFESPAN - Solar device for generation of electricity comprising a stack including a reception face ( | 2015-08-27 |
20150243872 | APPARATUS AND METHODS FOR HEAT-TO-ELECTRICAL ENERGY CONVERSION FROM A MOLDING PROCESS - The disclosed technology may include a waste energy harvesting system for recapturing and converting excess heat from the manufacturing process, such as a molding process, to electricity. The recaptured energy may replace or supplement existing cooling equipment and reduce overall energy consumption for the molding process. The disclosed technology may include an augmentation device for heating a portion of a manufacturing machine, such as a barrel of an injection molding machine, while also generating a cold exterior surface temperature used to cool a portion of the machine. This may reduce the amount of time required to warm the material inside the barrel of the molding machine and/or cool the mold after it is injected with hot material from the barrel. | 2015-08-27 |
20150243873 | ACOUSTIC WAVE DEVICE WITH SUPPRESSED HIGHER ORDER TRANSVERSE MODES - In an acoustic wave device, an unnecessary high-order transverse mode wave is suppressed. The acoustic wave device includes a piezoelectric substrate, at least one pair of interdigital transducer (IDT) electrodes formed on the piezoelectric substrate, and a dielectric film which covers at least a part of the piezoelectric substrate and the IDT electrodes. The IDT electrodes each have a plurality of electrode fingers interleaved with each other. An acoustic velocity of an acoustic wave in the area in which the electrode fingers are interleaved with each other is greater than an acoustic velocity of an acoustic wave in an edge area including end portions of the electrode fingers. | 2015-08-27 |
20150243874 | TRANSDUCERS WITH IMPROVED IMPEDANCE MATCHING - A transducer ( | 2015-08-27 |
20150243875 | ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - An electronic component includes a package substrate, an electronic component element mounted on the package substrate and includes an element substrate, a support layer, and a cover member, and a mold resin layer provided on the package substrate so as to seal the electronic component element. The cover member includes a first cover member provided on the package substrate and a second cover member provided on the first cover member. The glass transition temperature of a resin material of the first cover member is higher than that of a resin material of the second cover member. | 2015-08-27 |
20150243876 | PIEZOELECTRIC ELEMENT UNIT AND DRIVING DEVICE - A piezoelectric element unit comprises an element body having an active part and an inactive part; and a first resin part bonding one end surface in the laminating direction of the element body to a mounting surface of a joint member placed to face the one end surface. The first resin part covers the mounting surface up to an outer side surface of the element body corresponding to an interface between the active part and the inactive part, a second resin part covers an outer surface of the first resin part covering the outer side surface of the element body at a position corresponding to the interface between the active part and the inactive part, and the second resin part also integrally covers the outer side surface of the element body corresponding to the active part. | 2015-08-27 |
20150243877 | PIEZOELECTRIC ELEMENT UNIT AND DRIVING DEVICE - A piezoelectric element unit comprises an element body having internal electrodes laminated with piezoelectric layers therebetween and a pair of external electrodes electrically connected to the internal electrodes and an electric connection part for connecting a wiring part to the external electrodes. The electric connection part is composed of a conductive resin adhesive part and the conductive resin adhesive part is covered by a resin part. | 2015-08-27 |
20150243878 | NBT-BT CRYSTAL PIEZOELECTRIC FILM AND PIEZOELECTRIC STACKING STRUCTURE COMPRISING THE SAME - The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi) | 2015-08-27 |
20150243879 | BACKSIDE INTEGRATION OF RF FILTERS FOR RF FRONT END MODULES AND DESIGN STRUCTURE - A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device. | 2015-08-27 |
20150243880 | Piezoelectric Actuator of a Multilayer Design and Method for Fastening an Outer Electrode in a Piezoelectric Actuator - A piezoelectric actuator of a multilayer design includes outer electrodes that are fastened by means of a bonding layer applied by thermal spraying. For example, the outer electrodes are formed as a woven wire fabric. Furthermore, a method for fastening an outer electrode in a piezoelectric actuator is specified. | 2015-08-27 |
20150243881 | MAGNETIC SHIELDED INTEGRATED CIRCUIT PACKAGE - Embodiments of the present disclosure are directed towards magnetic shielded integrated circuit (IC) package assemblies and materials for shielding integrated circuits from external magnetic fields. In one embodiment, a package assembly includes a die coupled with a package substrate and a mold compound disposed on the die. The mold compound includes a matrix component and magnetic field absorbing particles. Other embodiments may be described and/or claimed. | 2015-08-27 |
20150243882 | Arrangements For An Integrated Sensor - An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof. | 2015-08-27 |
20150243883 | PLASMA ASSISTED ATOMIC LAYER DEPOSITION TITANIUM OXIDE FOR CONFORMAL ENCAPSULATION AND GAPFILL APPLICATIONS - The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO | 2015-08-27 |
20150243884 | METAL NITRIDE KEYHOLE OR SPACER PHASE CHANGE MEMORY CELL STRUCTURES - Non-volatile memory cell having small programming power and a reduced resistance drift are provided. In one embodiment of the present application, a non-volatile memory cell is provided that includes a layer of dielectric material that has a via opening that exposes a surface of a bottom electrode. A metal nitride spacer is located along a bottom portion of each sidewall surface of the layer of dielectric material and in the via opening. A phase change material structure is present in the via opening and contacting a top portion of each sidewall surface of the layer of dielectric material and a topmost surface of each metal nitride spacer. A top electrode is located on a topmost surface of the phase change material structure. | 2015-08-27 |
20150243885 | CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME - The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a memory device of the memory array comprises a substrate and a memory cell stack formed between and electrically connected to first and second conductive lines. The memory cell stack comprises a first memory element over the substrate and a second memory element formed over the first element, wherein one of the first and second memory elements comprises a storage element and the other of the first and second memory elements comprises a selector element. The memory cell stack additionally comprises a first pair of sidewalls opposing each other and a second pair of sidewalls opposing each other and intersecting the first pair of sidewalls. The memory device additionally comprises first protective dielectric insulating materials formed on a lower portion of the first pair of sidewalls and an isolation dielectric formed on the first protective dielectric insulating material and further formed on an upper portion of the first pair of sidewalls. | 2015-08-27 |
20150243886 | MONOLITHICALLY INTEGRATED RESISTIVE MEMORY USING INTEGRATED-CIRCUIT FOUNDRY COMPATIBLE PROCESSES - Provided is a monolithic integration of resistive memory with complementary metal oxide semiconductor using integrated circuit foundry processes. A memory device is provided that includes a substrate comprising one or more complementary metal-oxide semiconductor devices, a first insulator layer formed on the substrate; and a monolithic stack. The monolithic stack includes multiple layers fabricated as part of a monolithic process over the first insulator layer. The multiple layers include a first metal layer, a second insulator layer, and a second metal layer. A resistive memory device structure is formed within the second insulator layer and within a thermal budget of the one or more complementary metal-oxide semiconductor devices. The resistive memory device structure is implemented as a pillar device or as a via device. Further, the first metal layer is coupled to the second metal layer. | 2015-08-27 |
20150243887 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor memory device comprises a memory cell array. The memory cell array comprises a plurality of first wiring lines, a plurality of second wiring lines extending crossing the first wiring lines, and a plurality of memory cells disposed at intersections of the first and second wiring lines. The memory cells are stacked in a direction perpendicular to a substrate, and each memory cell comprises a variable resistance element. The semiconductor memory device also includes a select transistor layer comprising a plurality of select transistors, each select transistor being operative to select any one of the first wiring lines or one of the second wiring lines. Two select transistors are connected to two different respective first wiring lines, stacked in a direction perpendicular to the substrate, and configured to share one gate electrode. | 2015-08-27 |
20150243888 | RESISTIVE RANDOM ACCESS MEMORY DEVICES WITH EXTREMELY REACTIVE CONTACTS - A resistive switching device includes a first electrode and a transition metal oxide layer formed on the first electrode. An oxygen scavenging electrode is formed on the transition metal oxide wherein the oxygen scavenging electrode removes oxygen from the transition metal oxide layer to increase formation of oxygen vacancies in the transition metal oxide layer to enable a switching mode when a bias is applied between the first electrode and the oxygen scavenging electrode. | 2015-08-27 |
20150243889 | SALTS OF CYCLOPENTADIENE AS N-DOPANTS FOR ORGANIC ELECTRONICS - An organic electron transport layer has at least one dopant for increasing the n-conductivity of the organic layer. The dopant is selected from the group of salts of cyclopentadiene compounds according to formula 1, wherein the substituents R1 to R2 are independently selected from the group containing —H, -D, halogen, —CN, —NO2, —OH, amine, ether, thioether, alkyl, cycloalkyl, acrylic, vinyl, allyl, aromatics, fused aromatics and heteroaromatics. | 2015-08-27 |
20150243890 | ORGANIC LIGHT-EMITTING DISPLAY PANEL AND FABRICATION METHOD THEREOF - An organic light-emitting display panel and a fabrication method thereof include using an inkjet printing process to form the organic emission material of the display panel and providing a specific design of the relative position of the spacer and the planarization layer with ink-repellent material such that the spacer can be effectively fixed on the array substrate without falling from the planarization layer. | 2015-08-27 |
20150243891 | AROMATIC AMINE DERIVATIVE, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - An aromatic amine derivative represented by formula (1): | 2015-08-27 |
20150243892 | Organic Compound, Light-Emitting Element, Display Module, Lighting Module, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - A light-emitting element with high emission efficiency. The light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. In the light-emitting element, the EL layer contains at least a light-emitting material, the light-emitting material is a 1,6-bis(diphenylamino)pyrene derivative, and a structural change between an excited state and a ground state in the 1,6-bis(diphenylamino)pyrene derivative is smaller than that in a 1,6-bis(diphenylamino)pyrene derivative in which hydrogen is bonded to ortho positions of two phenyl groups of each of two diphenylamino groups. | 2015-08-27 |
20150243893 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - The present disclosure provides novel compounds based on azadibenzothiophenes, azadibenzofurans and azadibenzoselenophenes with at least two nitrogen atoms in the aza rings. The compounds can be used in green, red, yellow and white emitting devices as electron-transporting hosts. | 2015-08-27 |
20150243894 | Organic Electroluminescent Materials and Devices - The present invention relates to novel organic compounds containing oligocarbazoles. The compounds are useful for organic light-emitting diodes. The compounds are also useful for charge-transport and charge-blocking layers, and as hosts in the light-emissive layer for organic light emitting devices (OLEDs). | 2015-08-27 |
20150243895 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A compound is represented by Formula 1: | 2015-08-27 |
20150243896 | IMIDAZO DERIVATIVES - The present invention relates to imidizo derivatives containing a plurality of imidizo moieties linked by aryl or heteroaryl groups. The resultant imidizo derivates may advantageously be used in organic electronic devices, such as multi-layer organic electroluminescent devices or organic photovoltaic devices, and in chemical sensing applications as a host material. | 2015-08-27 |
20150243897 | MATERIALS FOR ORGANIC ELECTROLUMINESCENCE DEVICES - The present invention relates to compounds according to formula (1) or formula (2) which are suitable for use in electronic devices, more particularly organic electroluminescence devices, and also to electronic devices which contain said compounds. | 2015-08-27 |
20150243898 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A novel organic compound and an organic light emitting diode device using the same. The organic compound is represented by Chemical Formula 1: | 2015-08-27 |