36th week of 2010 patent applcation highlights part 12 |
Patent application number | Title | Published |
20100224806 | PRESSURE-REDUCING VALVE - A pressure-reducing valve is provided in which a diaphragm rod connected to a valve body of a valve mechanism is connected to a central part of a diaphragm having its peripheral edge part clamped between a body and a diaphragm cover, wherein the diaphragm ( | 2010-09-09 |
20100224807 | MULTIPLE FLOW-RATE DISPENSING VALVE AND METHOD - The present invention overcomes deficiencies in the art. A valve device is provided that includes a valve body defining a chamber for receiving fluid to be dispensed from the valve device, a seal contact surface located on the valve body, near a location where fluid discharges from the chamber, one or more grooves within the seal contact surface, and a reciprocatable piston rod supporting a seal that selectively contacts the seal contact surface, the piston rod being received at least partially within the chamber. The groove and seal have structural configurations that prevent the seal from fully blocking the groove when the piston rod is in a first position where the seal contacts a portion of the seal contact surface including the groove, and as a result fluid within the chamber may enter the groove when the piston rod is in this first position. A method of dispensing fluid in variable amounts is also provide that includes the steps of providing a valve device as described above, repeatedly moving the piston from the first position to the second position, thus allowing fluid within the chamber to enter the groove and then be swept out of the valve device in a dropwise manner. | 2010-09-09 |
20100224808 | VALVE ASSEMBLY COMPRISING A TORQUE LIMITER - A valve assembly ( | 2010-09-09 |
20100224809 | Method and Apparatus for Operating an Injection Valve - In order to operate an injection valve, a freewheeling operating state is controlled as the nozzle needle moves to its closing position, and a current through the coil is detected as a freewheeling current during freewheeling. As the nozzle needle moves to its closing position, a braking current pulse (I_BR) is generated on the basis of a time derivative (DI_DT_FW) of the freewheeling current and is impressed on the coil. | 2010-09-09 |
20100224810 | Sprinkler valve test and control device and method thereof - A sprinkler valve test and control device that is used to test and control a sprinkler valve having a solenoid plunger without the need for electricity. The sprinkler valve test and control device includes a cup shaped yoke body having a cavity and an opening, a magnet positioned in the cavity, and the magnetic having a magnetic field directed towards the opening of the cavity, and an epoxy fill sealing and securing the magnet in the cavity. When the device is placed over a solenoid plunger, the magnetic field actuates the solenoid plunger of the sprinkler valve to turn the sprinkler valve on. The device allows efficient and effective determination of the reasons for the malfunctioning of sprinkler valves. | 2010-09-09 |
20100224811 | WATER SUPPLY FAUCET ASSEMBLY - The present invention discloses an improved water supply faucet assembly of a washing machine, and the water supply faucet includes a valve chamber disposed at the bottom of the interior of a water faucet body and provided for connecting a precision ceramic valve module having a valve spindle, a water isolating plate, a water control plate, a water outlet plate and a water-resistance ring, and a screw hose secured to the bottom of the water faucet body for sealing and limiting the position of the ceramic valve module, such that after the valve spindle is passed through a penetrating hole at the top of the faucet body of the washing machine, the valve spindle can be coupled to a water control handle, so as to constitute the water supply faucet assembly of the invention. | 2010-09-09 |
20100224812 | Sanitary fitting with limitation of water flow - A sanitary fitting includes a fitting housing; a cartridge disposed in a recess of the fitting housing, the cartridge having a control arm which, for an adjustment of a temperature of water, is rotatable about a rotation axis of the cartridge and, for an adjustment of water flow, is pivotable about a pivot axis running at right angles to the rotation axis, between an off setting and a maximum setting; an actuating lever disposed on the control arm, the actuating lever rotating and pivoting the control arm; and a cap covering the recess and the cartridge, the cap limiting a pivot motion of the actuating lever, and thus of the control arm, between the off setting and the maximum setting in an economy setting. | 2010-09-09 |
20100224813 | VALVE FOR WATER FAUCET - A valve for a water faucet includes a base, a seat unrotatably mounted on base, a valve set mounted on the seat, a disk unrotatably mounted on the first valve set, and a housing mounted on the disk. The valve set includes a pivotable valve pivotally mounted on the first portion of the seat and a rotatable valve rotatably mounted on the second portion of the seat. The disk, the rotatable valve, the pivotable valve, the seat, and the base are sequentially received in the housing. | 2010-09-09 |
20100224814 | GATE VALVE WITH LUBRICATED SECONDARY SEAL - A gate valve includes a pair of opposing housing members, a gate, primary sealing sleeves and a secondary sealing member. The primary sealing sleeves are disposed in each of the housing members. The gate is configured to slidably pass through a transverse gate chamber defined when the housing members are joined together. The secondary sealing member is secured between the housing members and includes at least one passage or aperture configured to allow lubricating fluid to be applied through at least one of the housing members through the secondary sealing member and onto the gate. | 2010-09-09 |
20100224815 | Slide Valve, In Particular for Blocking a Line Conveying Media - A slide valve, in particular for blocking a line conveying media, comprises a multi-part housing ( | 2010-09-09 |
20100224816 | GATE VALVE WITH LUBRICATED SECONDARY SEAL - A gate valve includes a pair of opposing housing members, a gate, primary sealing sleeves and a secondary sealing member. The primary sealing sleeves are disposed in each of the housing members. The gate is configured to slidably pass through a transverse gate chamber defined when the housing members are joined together. The secondary sealing member is secured between the housing members and includes at least one passage or aperture configured to allow lubricating fluid to be applied through at least one of the housing members through the secondary sealing member and onto the gate. | 2010-09-09 |
20100224817 | WATER-AND OIL-REPELLENT - A water- and oil-repellent includes, as an active ingredient, a fluorine-containing copolymer including as a copolymer unit (A) at least one of perfluoroalkylalkyl acrylates and corresponding methacrylates, (B) benzyl acrylate or benzyl methacrylate represented by the general formula: C | 2010-09-09 |
20100224818 | FREESTANDING FILMS WITH ELECTRIC FIELD-ENHANCED PIEZOELECTRIC COEFFICIENTS - A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The −d | 2010-09-09 |
20100224819 | METHOD FOR MANUFACTURING OF A SMART PACKAGING MATERIAL - This invention discloses a method for manufacturing of the smart packaging materials and tagging technique of using frequency identification of magnetically active compounds with different signal positions. The different concentrations of the differently substituted compounds generate a vast number of different tag codes. The compounds used belong to the classes of organic magnetically active compounds or polymers that are compatible with an in-melting process of most packaging polymeric materials. This allows the magnetically active compounds to be incorporated in polymeric materials for durable tracking and identification purposes. | 2010-09-09 |
20100224820 | MAGNETORHEOLOGICAL COMPOSITIONS INCLUDING NONMAGNETIC MATERIAL - A magnetorheological composition includes a mixture of a carrier medium and a particle component disposed in the carrier medium. The particle component includes a magnetic material and a nonmagnetic material. The nonmagnetic material is present in the particle component in an amount of from about 5 to about 95 parts by volume based on 100 parts by volume of the particle component. The particle component is present in the magnetorheological composition in an amount of from about 20 to about 80 parts by volume based on 100 parts by volume of the magnetorheological composition. The magnetorheological composition has an on-state yield stress at magnetic saturation of from about 0.1 to about 100 kPa. | 2010-09-09 |
20100224821 | Nanostructure having metal nanoparticles and a method of assembly thereof - A nanostructure and method for assembly thereof are disclosed. An exemplary nanostructure includes a gain medium nanoparticle with an output coupler linked to the gain medium nanoparticle. A tier of metal nanoparticles is linked about the gain medium nanoparticle. | 2010-09-09 |
20100224822 | INSULATED IRON-BASE POWDER FOR SOFT MAGNETIC APPLICATIONS - The present invention relates to ferromagnetic powders with an electrically insulating layer on iron particles intended for the manufacture of components having improved soft magnetic properties at low and medium frequencies. The invention comprises an iron powder coated with a dielectric insulating layer comprising boron bearing compounds to form an insulated ferromagnetic powder. The present invention also relates to a method of making these insulated ferromagnetic powders. The present invention further relates to a method of synthesizing a product made from insulated ferromagnetic powders via a post-heat treatment at a moderate temperature (300° C. to 700° C.), to form a glass-like coating which acts as an electrical insulator. A preferred embodiment of the present invention is obtained when small amounts of alkali bearing compounds are added to the precursors to modify the coating chemistry and significantly increase the electrical resistivity after heat treatment. | 2010-09-09 |
20100224823 | SUPERPARAMAGNETIC COLLOIDAL NANOCRYSTAL STRUCTURES - Monodisperse colloidal nanocrystal clusters of magnetite (Fe | 2010-09-09 |
20100224824 | Anode material for lithium-ion chemical current sources and method of obtaining thereof - Field of use: the electrotechnical industry, in particular, anode materials for lithium-ion ECCs. Essence of the invention: Anode material based on lithium-titanium spinel that contains doping components, chromium and vanadium, in equivalent quantities, of the chemical formula Li | 2010-09-09 |
20100224825 | LIQUID DISPERSION AND THERMOPLASTIC COMPOSITIONS COMPRISING THE SAME - An additive composition comprises a liquid medium and a clarifying agent. The liquid medium is either a liquid hydrocarbon or a surfactant having an HLB of about 6 or less. The clarifying agent is dispersed in the liquid medium. In certain particular embodiments, the additive composition comprises both the liquid hydrocarbon and the surfactant, with the liquid hydrocarbon providing the medium for the additive composition. A thermoplastic polymer composition comprises a thermoplastic polymer and an additive composition of the invention. A method for producing a thermoplastic polymer composition comprises the steps of providing a thermoplastic polymer, providing an additive composition, and mixing the thermoplastic polymer and the additive composition to produce the thermoplastic polymer composition. | 2010-09-09 |
20100224826 | Dispersion Liquid Comprising Liquid Crystal-Compatible Particles, Paste Obtained Therefrom, and Mehtod for Preparing the Same - A task of the present invention is to provide a method for preparing a dispersion liquid comprising liquid crystal-compatible particles and a paste thereof, which is commercially advantageous in that a dispersion liquid comprising liquid crystal-compatible particles and a uniform liquid crystal-compatible particle paste can be obtained using a method which can easily achieve mass-production. | 2010-09-09 |
20100224827 | LIQUID-CRYSTALLINE MEDIUM - Disclosed are a liquid-crystalline medium, which contains a compound of formula I | 2010-09-09 |
20100224828 | PHOSPHOR, PHOSPHOR PASTE CONTAINING THE SAME, AND LIGHT-EMITTING DEVICE - Disclosed is a phosphor having high luminance. This phosphor includes an oxide containing M | 2010-09-09 |
20100224829 | PHOSPHOR - Disclosed is a phosphor having high luminance, which is composed of M | 2010-09-09 |
20100224830 | Silicate Phosphor for UV and Long-Wavelength Excitation and Preparation Method Thereof - The present invention relates to a phosphor for UV and long-wavelength excitation and a preparation method thereof, more particularly to a phosphor for UV and long-wavelength excitation prepared from a phosphor precursor comprising strontium, barium, zinc, silica and rare-earth metal, wherein the proportion of barium and zinc is optimized to obtain a color coordinate in the range of x=0.50-0.64 and y=0.38-0.51, and a method for preparing the same by heat-treating the phosphor precursor under a mixed gas atmosphere of nitrogen and hydrogen with specific proportion. Since heat treatment is possible even at low temperature, a phosphor for UV and long-wavelength excitation having superior luminescence characteristics and thus offering superior efficiency when applied to diodes or liquid crystal displays can be obtained without having to use conventional flux materials to lower baking temperature and without using toxic substances. | 2010-09-09 |
20100224831 | NANOPARTICLE-DOPED POROUS BEAD AND FABRICATION METHOD THEREOF - Disclosed are a nanoparticle-doped porous bead with a highly enhanced photoluminescence without wavelength shift and improved durability, and a fabrication method thereof, the nanoparticle-doped porous bead comprising porous beads, and nanoparticles radially bonded onto homocentric spheres of the porous beads by an electrostatic attractive force, the homocentric sphere located inside the porous bead near a surface thereof, wherein the nanoparticles are photoluminescent nanoparticles or mixed nanoparticles of photoluminescent nanoparticles and another nanoparticles, wherein the another nanoparticle is one or more than two mixed, selected from a group consisting of magnetic nanoparticle, metallic nanoparticle and metal oxide nanoparticle. | 2010-09-09 |
20100224832 | Modified nano-dot, fabrication method thereof and composition element thereof - The present invention discloses a modified nano-dot and a fabrication method thereof. The modified nano-dot comprises a surface portion having a functional group and a core portion comprising a polymeric metal oxide, polymeric metalloid oxide or polymeric metal alloy oxide. The mean particle size of the modified nano-dot is 1-100 nm, preferably 1-10 nm. The modified nano-dot capable of modulating a carrier flux can be further applied to the element manufacture in the organic semiconductor industry, optoelectronics industry, and solar cell industry. | 2010-09-09 |
20100224833 | MICROSCOPE IMMERSION OIL - Provided is an immersion oil for microscope including a liquid olefin polymer (A), a liquid diene polymer (B), a diaryl alkane (C), and an alkyl benzene (D), the immersion oil for microscope being capable of maintaining low fluorescence of its own over a long period of time, having good characteristics required for an immersion oil for microscope, such as good refractive index, Abbe number, viscosity, and resolution, and being particularly suitable as an immersion oil for a fluorescence microscope. | 2010-09-09 |
20100224834 | Method For Determining Carbon Content Of A Hydrocarbon-Containing Mixture - A method for determining a carbon content value of a hydrocarbon-containing mixture. At least one composition-dependent bulk property of the hydrocarbon-containing mixture is measured and optionally at least one non-hydrocarbon component concentration is measured with the resulting measurements used in a carbon content correlation for calculating the carbon content of the hydrocarbon-containing mixture. The carbon content may be used in a hydrogen and/or synthesis gas production process for calculating a target flow rate of steam to be combined with the hydrocarbon-containing mixture to form a mixed feed having a target steam-to-carbon ratio. | 2010-09-09 |
20100224835 | Production of synthesis gas through controlled oxidation of biomass - A process for producing synthesis gas from biomass in which biomass is contacted with oxygen and steam, wherein the oxygen is present in an amount effective to oxidize the biomass partially and to heat the biomass to a temperature of at least 500° C. and no greater than 750° C. At least a portion of the partially oxidized biomass then is treated with oxygen and steam to heat the biomass to a temperature of at least 800° C., thereby producing a synthesis gas, which then is recovered. | 2010-09-09 |
20100224836 | AQUEOUS COMPOSITION FOR CONDUCTIVE COATING - Objective is to provide an aqueous composition for conductive coating which enables to form a conductive coating. In more specific embodiment, an object of the present invention is to provide an aqueous composition for conductive coating which enables to form a conductive and transparent coating, while being excellent in environmental safety and dispersion stability. An aqueous composition for conductive coating, comprising a water-soluble xylan, a resin and a carbon nanotube in an aqueous medium. The carbon nanotube may be a multilayer carbon nanotube or a single-layer carbon nanotube. | 2010-09-09 |
20100224837 | FEATURE FORMING PROCESS USING ACID-CONTAINING COMPOSITION - A process including: (a) forming a feature comprising uncoalesced silver-containing nanoparticles; (b) heating the uncoalesced silver-containing nanoparticles to form coalesced silver-containing nanoparticles wherein the feature comprising the coalesced silver-containing nanoparticles exhibits a low electrical conductivity; and (c) subjecting the coalesced silver-containing nanoparticles to an acid-containing composition to increase the electrical conductivity of the feature by at least about 100 times. | 2010-09-09 |
20100224838 | Electrochromic Mirrors and other Electrooptic Devices - This invention focuses on electrooptic devices and in particular on electrochromic devices with many aspects directed towards automotive EC mirrors. There are several ways to improve these products and their processing using this invention and some of the prominent ones are outlined below. This invention improves on the devices by disclosing new compositions for electrodes and methods of depositing them. It also addresses novel ways to provide busbars to power these devices in order to improve their performance. The device processing attributes and performance are also improved by adhesive compositions and solid electrolytes disclosed herein. In addition sensors are also disclosed which are novel for use in electrochromic mirrors. The invention also discloses how the electrolytes comprising ionic liquids have no adverse effect on attributes of commercial EC mirrors and often result in improved performance and/or feature enhancements. | 2010-09-09 |
20100224839 | NEAR-INFRARED ABSORBING MATERIAL - The invention provides a near-infrared absorbing material, including: at least one of at least one singlet oxygen scavengers, at least one radical scavenger, and at least one antioxidant; and at least one near-infrared absorbing compound obtained by oxidation of a compound represented by the following Formula (II). | 2010-09-09 |
20100224840 | Method and Composition - A method of treating a material to improve flame retardancy, the method comprising applying to the material urea, phosphorous acid or a salt thereof, and a base comprising a monovalent metallic cation. | 2010-09-09 |
20100224841 | LIFT CONTROL SYSTEMS FOR LIFTING DEVICES AND LIFTING DEVICES COMPRISING THE SAME - A control system for a lifting device and a lifting device comprising the same are disclosed. The control system includes a control unit comprising a processor with a memory communicatively coupled to the processor and having computer readable and executable instructions. A battery is electrically coupled to the control unit in addition to at least one indicator. The processor executes the computer readable and executable instructions to: determine an operating characteristic of the lifting device and an operating time of the lifting device as the lifting device is actuated; determine an accumulated load-time parameter for the lifting device based on the operating characteristic and the operating time; store the accumulated load-time parameter in the memory of the lift control system; compare the accumulated load-time parameter to a service constant; and provide an indication the indicator that a lift structural component requires service based on the comparison. | 2010-09-09 |
20100224842 | LANDING JACK LIFT - A landing jack lift has an upright lever portion which is pivotally attached to a base plate. A lifting arm is pivotally connected to the upright along the lower portion of the upright lever. A lifting plate is pivotally disposed on an end of the lifting arm and removably fits under a landing jack foot while in use. A pin pulling arm is pivotally disposed above the lifting arm on the upright lever portion and selectively retains the locking pin on the landing jack to allow the landing jack to move. The lifting arm is constrained to not pivot past around 90 degrees from the upright lever. In use the user is not required to bend over while raising and lowering the landing jack. A handle is provided on the upper portion of the upright lever to aid the user. | 2010-09-09 |
20100224843 | Winch System Safety Device Controlled by Towrope Angle - A towrope winch with a safety shutoff device includes a winch configured to wind a rope; and a safety shutoff device which deactivates the winch if the rope moves outside a designated range of angles relative to an intake of the winch. | 2010-09-09 |
20100224844 | WINCH FOR PULLING CABLES, IN PARTICULAR SYNTHETIC CABLES USED OFFSHORE | 2010-09-09 |
20100224845 | Conveyor Belt Lifting Device - A conveyor belt lifting device for use on a belt-type conveyor comprising a conveyor belt supported by a support structure includes an inflatable bag and is operable between a retracted condition in which the inflatable bag is deflated and an operative condition in which the inflatable bag is inflated and its operably upper surface adopts a shape generally to conform to an underside of the conveyor belt. The invention extends to a method for providing access to components of a belt-type conveyor comprising a conveyor belt supported by a support structure. | 2010-09-09 |
20100224846 | DEVICE FOR ADJUSTING AND MAINTAINING THE HEIGHT OF A SEAT - Device for adjusting a height of a seat, including at least one actuator connected to at least one source of power via at least one control valve having at least one control member for controlling the pressurizing of the actuator and at least one control member for controlling the exhausting of the actuator, the device including a cam associated, on the one hand, with at least one means of driving as a function of a variation in height of the seat, and, on the other hand, with the valve control members, the said cam being configured to have at least one neutral position in which it actuates no control member, and at least two active positions about the said neutral position, these respectively corresponding to a pressurizing of the actuator when the cam has pivoted about the neutral position in a direction corresponding to a reduction in the height of the seat and to an exhausting of the actuator when the cam is pivoted about the neutral position in a direction corresponding to a raising of the height of the seat, the means of driving also being mounted so that they can be disengaged in relation to the cam. | 2010-09-09 |
20100224847 | Fashion fence framework - A fence component with a first framework defining an opening and a second framework defining an opening, where the second framework faces the first framework. The fence component also has a panel between the first framework and the second framework, where the first opening faces a first side of the panel and the second opening faces a second side of the panel. | 2010-09-09 |
20100224848 | GARDEN FENCE APPARATUS AND METHOD OF CONSTRUCTING IT - There is disclosed garden fence apparatus and a method of constructing it. The garden fence apparatus may include a garden fence assembly having a plurality of fence sections and a gate section adapted to be joined together to provide an enclosure for a protected garden area. Each fence section may include a bottom transverse support member having a plurality of openings and a plurality of rods inserted through the openings to anchor the fence section to the ground and create a barrier in the ground to prohibit creatures such as rabbits and other animals from burrowing under the fence sections and gaining access to or leaving the protected garden area. The transverse support member may also be in the form of an independent barrier strip for existing fences. The garden fence apparatus may further include an upper level enclosure fixedly fastened to the fence and gate sections to prevent or at least discourage unwanted creatures from reaching over or jumping over the fence sections into the protected area. | 2010-09-09 |
20100224849 | Oxide diode, method of manufacturing the same, and electronic device and resistive memory device including the same - Provided are an oxide diode, a method of fabricating the oxide diode, and an electronic device including the oxide diode. The oxide diode may include an n-type oxide layer treated with plasma, and a p-type oxide layer on the n-type oxide layer. The plasma may include nitrogen. | 2010-09-09 |
20100224850 | Non-Volatile Memory Cells Employing a Transition Metal Oxide Layer as a Data Storage Material Layer and Methods of Manufacturing the Same - Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide layer pattern is provided between the lower and upper electrodes. The transition metal oxide layer pattern is represented by a chemical formula M | 2010-09-09 |
20100224851 | SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION - A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface. | 2010-09-09 |
20100224852 | III-NITRIDE LIGHT EMITTING DEVICE INCORPORATING BORON - Embodiments of the invention include a III-nitride semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. At least one layer in the light emitting region is B | 2010-09-09 |
20100224853 | SEMICONDUCTOR NANOCRYSTAL PROBES FOR BIOLOGICAL APPLICATIONS AND PROCESS FOR MAKING AND USING SUCH PROBES - A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe. | 2010-09-09 |
20100224854 | LIGHT EMITTING DEVICE - A light emitting device (LED) is provided. The LED comprises a light emitting structure and a mixed-period photonic crystal structure. The light emitting structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The mixed-period photonic crystal structure is on the light emitting structure. | 2010-09-09 |
20100224855 | Light-emitting device epitaxial wafer and light-emitting device - A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si. | 2010-09-09 |
20100224856 | ELECTROLUMINESCENT DEVICE - Provided is an electroluminescent device which has a luminescent layer including quantum dots and which are excellent in life characteristics. An electroluminescent device ( | 2010-09-09 |
20100224857 | FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDs - A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material. | 2010-09-09 |
20100224858 | LATERAL THERMAL DISSIPATION LED AND FABRICATION METHOD THEREOF - A lateral thermal dissipation LED and a fabrication method thereof are provided. The lateral thermal dissipation LED utilizes a patterned metal layer and a lateral heat spreading layer to transfer heat out of the LED. The thermal dissipation efficiency of the LED is increased, and the lighting emitting efficiency is accordingly improved. | 2010-09-09 |
20100224859 | Organic Light-Emitting Diodes with Electrophosphorescent-Coated Emissive Quantum Dots - The present invention provides a composition comprising quantum dots and a coating material that comprises an electro-phosphorescent moiety, and methods for producing and using the same. In particular, compositions of the invention are used in organic light emitting diodes (OLEDs), and electronic devices that utilize OLEDs. | 2010-09-09 |
20100224860 | HIGH EFFICIENCY LEDS WITH TUNNEL JUNCTIONS - An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction. | 2010-09-09 |
20100224861 | Twin-drain spatial wavefunction switched field-effect transistors - A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned. | 2010-09-09 |
20100224862 | CARBON NANOTUBE STRUCTURE AND THIN FILM TRANSISTOR - When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance. | 2010-09-09 |
20100224863 | ORGANIC EL ELEMENT - To provide an organic EL element in which the hue of display light can be restrained from varying according to a change of the viewing angle. The organic EL element includes: a first electrode (anode) | 2010-09-09 |
20100224864 | Organic light emitting diode and method for manufacturing the same - An organic light emitting diode (OLED) and a method for manufacturing the same are disclosed, wherein the method comprises following steps: (a) providing a substrate having a first conductive layer; (b) providing a precursor and polymerizing the precursor by plasma to form a fluorocarbon polymer layer or a fluorocarbon copolymer layer on the first conductive layer of the substrate; (c) forming an organic light emitting structure on the fluorocarbon polymer layer or a fluorocarbon copolymer layer; and (d) forming a second conductive layer on the organic light emitting structure. The hole injection efficiency of the OLED can be improved by the method of the present invention. Hence, the current density of the OLED can be greatly increased. | 2010-09-09 |
20100224865 | ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY AND DISPLAY APPARATUS - A disclosed organic transistor includes a substrate; a gate electrode; a gate insulating film; source-drain electrodes; and an organic semiconductor layer. The gate electrode and the gate insulating film are disposed on the substrate in the stated order, and the source-drain electrodes and the organic semiconductor layer are disposed at least on the gate insulating film in the stated order. At least one of the source-drain electrodes includes a first part disposed directly above the gate electrode, a second part disposed not over the gate electrode, and a connecting part which has a width smaller than a width of the first part and connects the first part and the second part. | 2010-09-09 |
20100224866 | TERNARY EMISSIVE LAYERS FOR LUMINESCENT APPLICATIONS - There is provided an organic light emitting diode having an anode, a hole transport layer containing a material having an ionization potential IP | 2010-09-09 |
20100224867 | ELECTRONIC DEVICES COMPRISING STRUCTURED ORGANIC FILMS - An electronic device comprising a structured organic film with an added functionality comprising a plurality of segments and a plurality of linkers arranged as a covalent organic framework, wherein the structured organic film may be a multi-segment thick structured organic film. | 2010-09-09 |
20100224868 | Light Emitting Device - The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced. | 2010-09-09 |
20100224869 | ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR STRUCTURE AND ORGANIC SEMICONDUCTOR APPARATUS - The present invention is directed to the provision of a liquid crystalline organic semiconductor material, which is highly stable under a film forming environment and, at the same time, can easily form a film, for example, by coating. The liquid crystalline organic semiconductor material comprises: a thiophene skeleton comprising 3 to 6 thiophenes linearly connected to each other; and an identical alkyl group having 1 to 20 carbon atoms located on both sides of the thiophene skeleton, wherein acetylene skeletons each have been introduced into between the thiophene skeleton and the alkyl group, or acetylene skeletons have been introduced symmetrically into the thiophene skeleton. | 2010-09-09 |
20100224870 | FIELD EFFECT TRANSISTOR - A field effect transistor includes at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode. The channel layer is formed from an amorphous oxide material that contains at least In and Mg, and an element ratio, expressed by Mg/(In+Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower. | 2010-09-09 |
20100224871 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer. | 2010-09-09 |
20100224872 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode. | 2010-09-09 |
20100224873 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer. | 2010-09-09 |
20100224874 | TCP-type semiconductor device - A TCP-type semiconductor device has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected to the semiconductor chip. Each of the plurality of leads has a test pad section at a position other than both ends of the each lead. | 2010-09-09 |
20100224875 | SUBSTRATE WITH TEST CIRCUIT - The present invention relates to a substrate with a substrate test circuit. In an embodiment, by making the length of the wiring from a first data-line-test input terminal to a first panel equal to that of the wiring from a second data-line-test input terminal to the first panel, the input resistances between two test input terminals of a first data-line-test line and the first panel are identical, and thus when a data line of the first panel is detected, the voltage drops of test signals inputted from the two test input terminals are the same, and the test signals actually loaded to the first panel are the same and the detecting abilities are identical. | 2010-09-09 |
20100224876 | Two-Sided Semiconductor Structure - Deep via trenches and deep marker trenches are formed in a bulk substrate and filled with a conductive material to form deep conductive vias and deep marker vias. At least one first semiconductor device is formed on the first surface of the bulk substrate. A disposable dielectric capping layer and a disposable material layer are formed over the first surface of the bulk substrate. The second surface, located on the opposite side of the first surface, of the bulk substrate is polished to expose and planarize the deep conductive vias and deep marker vias, which become through-substrate vias and through-substrate alignment markers, respectively. At least one second semiconductor device and second metal interconnect structures are formed on the second surface of the bulk substrate. The disposable material layer and the disposable dielectric capping layer are removed and first metal interconnect structures are formed on the first surface. | 2010-09-09 |
20100224877 | Electronic Photosensitive Body and Manufacturing Method for Same, as well as Image Forming Apparatus - Disclosed is an electrophotographic photoreceptor which comprises a base material and a photoconductive layer. The photoconductive layer is formed on the base material, and comprises a non-single-crystal material mainly composed of silicon. In the photoconductive layer, with regard to a characteristic energy E (eV) which has the relationship with a light absorption coefficient α (cm | 2010-09-09 |
20100224878 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer over a substrate; a gate insulating film covering the semiconductor layer; a gate wiring including a gate electrode, which is provided over the gate insulating film and is formed by stacking a first conductive layer and a second conductive layer; an insulating film covering the semiconductor layer and the gate wiring including the gate electrode; and a source wiring including a source electrode, which is provided over the insulating film, is electrically connected to the semiconductor layer, and is formed by stacking a third conductive layer and a fourth conductive layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. The source electrode is formed using the third conductive layer. The source wiring is formed using the third conductive layer and the fourth conductive layer. | 2010-09-09 |
20100224879 | THIN FILM TRANSISTOR - A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity. | 2010-09-09 |
20100224880 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with low wiring resistance, high transmittance, or a high aperture ratio. A gate electrode, a semiconductor layer, and a source electrode and a drain electrode are formed using a material having a light-transmitting property and a wiring such as a gate wiring or a source wiring is formed using a material whose resistivity is lower than that of the material having a light-transmitting property. Alternatively, the source wiring and/or the gate wiring are/is formed by a stack of a material having a light-transmitting property and a material whose resistivity is lower than that of the material having a light-transmitting property. | 2010-09-09 |
20100224881 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance. | 2010-09-09 |
20100224882 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer. | 2010-09-09 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 2010-09-09 |
20100224884 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A channel layer ( | 2010-09-09 |
20100224885 | SEMICONDUCTOR DEVICE - A semiconductor device having a junction FET having improved characteristics is provided. The semiconductor device has a junction FET as a main transistor and has a MISFET as a transistor for control. The junction FET has a first gate electrode, a first source electrode, and a first drain electrode. The MISFET has a second gate electrode, a second source electrode, and a second drain electrode. The MISFET is an n-channel type MISFET and has electric characteristics of an enhancement mode MISFET. The second gate electrode and the second drain electrode of the MISFET are connected to each other by short-circuiting. The first gate electrode of the junction FET and the second source electrode of the MISFET are connected to each other by short-circuiting. | 2010-09-09 |
20100224886 | P-CHANNEL SILICON CARBIDE MOSFET - A second trench in each source electrode portion (Schottky diode portion) is formed to have a depth equal to or larger than the depth of a first trench in each gate electrode portion. The distance between the first and second trenches is set to be not longer than 10 μm. A source electrode is formed in the second trench and a Schottky junction is formed in the bottom portion of the second trench. In this manner, it is possible to provide a wide band gap semiconductor device which is small-sized, which has low on-resistance and low loss characteristic, in which electric field concentration into a gate insulating film is relaxed to suppress reduction of a withstand voltage, and which has high avalanche breakdown tolerance at turn-off time. | 2010-09-09 |
20100224887 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor multilayer structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer of the semiconductor multilayer structure; a second electrode provided on the second semiconductor layer of the semiconductor multilayer structure; and a third electrode connected to the second electrode. The second electrode is provided between the first electrode and the third electrode as viewed in a direction perpendicular to a major surface of the semiconductor multilayer structure, and includes: a first region having at least one notch extending toward a route connecting between the first electrode and the third electrode; a second region provided around the first electrode and having no notch; and a third region provided around the third electrode and having no notch. | 2010-09-09 |
20100224888 | MONOLITHIC CELL ARRAY DISPLAY - There is described a display comprising: a monolithic array of cells; and optical direct outputs located within the monolithic array of cells and adapted for collectively forming a human-readable display upon using a first portion of available light, wherein a second portion of the available light is used concurrently to the first portion for a purpose other than the forming the human-readable display. | 2010-09-09 |
20100224889 | Polychromatic LED's and Related Semiconductor Devices - A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided. | 2010-09-09 |
20100224890 | Light emitting diode chip with electrical insulation element - A light emitting diode chip comprising a light emitting diode and a thermally conductive substrate. The light emitting diode is on the substrate with the substrate providing a thermal path from the light emitting diode through the substrate. A mounting pad is also on a substrate and an electrically insulating layer is integral to the substrate. The insulating layer electrically insulates the mounting pad from the light emitting diode. A method for fabricating a light emitting diode chip comprises providing a thermally conductive substrate, forming an electrical insulating layer integral to the substrate and forming a mounting pad on the substrate. A light emitting diode is fabricated and mounted to the substrate, with the light emitting diode electrically insulated from the mounting pad by the electrically insulating layer. | 2010-09-09 |
20100224891 | VERTICALLY STRUCTURED LED BY INTEGRATING NITRIDE SEMICONDUCTORS WITH Zn(Mg,Cd,Be)O(S,Se) AND METHOD FOR MAKING SAME - A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula Zn | 2010-09-09 |
20100224892 | Nitride Semiconductor Light Emitting Element - Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer | 2010-09-09 |
20100224893 | Method for Arranging a Powder Layer on a Substrate and Layer Structure with at least One Powder Layer on a Substrate - A process for arranging a powder layer comprising a powder on a substrate surface of a substrate. A substrate having a substrate surface is provided, and a mixture comprising the powder and an adhesion promoter is applied on the substrate surface. The adhesion promoter is removed and the powder layer is fixed on the substrate surface. | 2010-09-09 |
20100224894 | III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The present disclosure relates to a III-nitride semiconductor light emitting device, including: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer generating light by recombination of electrons and holes; a scattering surface provided on the substrate to scatter the light generated in the active layer; and a sub-scattering portion ruggedly formed on the scattering surface. | 2010-09-09 |
20100224895 | LIGHT EMITTING DEVICE - A light emitting device that has excellent color rendering performance is provided. | 2010-09-09 |
20100224896 | LIGHT EMITTING DEVICE COMPRISING A COMPOSITE SIALON-BASED CERAMIC MATERIAL - The invention relates to a light emitting device, especially a LED with a ceramic composite material essentially of the composition M | 2010-09-09 |
20100224897 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes at least one protrusion structure, which can be formed around a light-emitting region of the device. The at least one protrusion structure can include a plurality of protrusion structures in one embodiment. In addition, a fabricating method for forming a semiconductor optoelectronic device with enhanced light extraction efficiency is provided in the present invention. | 2010-09-09 |
20100224898 | OPTICAL SEMICONDUCTOR DEVICE HAVING AIR GAP FORMING REFLECTIVE MIRROR AND ITS MANUFACTURING METHOD - In an optical semiconductor device including an epitaxially-grown light emitting semiconductor layer and a reflective electrode layer provided at a counter face of the light emitting semiconductor layer opposing a light extracting face thereof, a support electrode layer is provided between the reflective electrode layer and the counter face of the light emitting semiconductor layer and is adapted to support the light emitting semiconductor layer and electrically connect the light emitting semiconductor layer to the reflective electrode layer. Also, a total area of the support electrode layer is smaller than an area of the reflective electrode layer. Further, an air gap at a periphery of the support electrode layer and the reflective electrode layer serves as a reflective mirror. | 2010-09-09 |
20100224899 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME - Provided are a light emitting device, a light emitting device package and a lighting system including the same. | 2010-09-09 |
20100224900 | SEMICONDUCTOR OPTOELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor optoelectronic device with enhanced light extraction efficiency includes a major luminescent area and a secondary luminescent area, wherein the major luminescent area is surrounded by a secondary luminescent area. The secondary luminescent area not only can improve the light extraction efficiency of the major luminescent area, but per se also can luminesce. In addition, one embodiment of the present invention provides a fabricating method for forming the secondary luminescent area. | 2010-09-09 |
20100224901 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes an n-type semiconductor layer formed on a substrate, a light-emitting layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the light-emitting layer, and an electrode layer formed on the p-type semiconductor layer. A through hole is formed in the electrode layer and filled with a dielectric layer. The dielectric layer is composed of a dielectric material having a dielectric constant such that the wavelength λ | 2010-09-09 |
20100224902 | COMPLIANT BONDING STRUCTURES FOR SEMICONDUCTOR DEVICES - A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer. | 2010-09-09 |
20100224903 | LIGHT EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer. | 2010-09-09 |
20100224904 | LED PACKAGE HAVING AN ARRAY OF LIGHT EMITTING CELLS COUPLED IN SERIES - Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source. | 2010-09-09 |
20100224905 | Semiconductor Light Source - A semiconductor light source for illuminating physical spaces includes a lead frame with multiple facets, each facet having one or more semiconductor light emitting devices mounted thereon. | 2010-09-09 |