37th week of 2010 patent applcation highlights part 16 |
Patent application number | Title | Published |
20100230772 | ARRAY OF ALPHA PARTICLE SENSORS - An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns). | 2010-09-16 |
20100230773 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 2010-09-16 |
20100230774 | Diode Having High Breakdown Voltage and Low on-Resistance - A Schottky or PN diode is formed where a first cathode portion is an N epitaxial layer that is relatively lightly doped. An N+ buried layer is formed beneath the cathode for conducting the cathode current to a cathode contact. A more highly doped N-well is formed, as a second cathode portion, in the epitaxial layer so that the complete cathode comprises the N-well surrounded by the more lightly doped first cathode portion. An anode covers the upper areas of the first and second cathode portions so both portions conduct current when the diode is forward biased. When the diode is reverse biased, the depletion region in the central N-well will be relatively shallow but substantially planar so will have a relatively high breakdown voltage. The weak link for breakdown voltage will be the curved edge of the deeper depletion region in the lightly doped first cathode portion under the outer edges of the anode. Therefore, the N-well lowers the on-resistance without lowering the breakdown voltage. | 2010-09-16 |
20100230775 | TERMINATION FOR A SUPERJUNCTION DEVICE - A superjunction device that includes a termination region having a transition region adjacent the active region thereof, the transition region including a plurality of spaced columns. | 2010-09-16 |
20100230776 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - Briefly, in accordance with one or more embodiments, a semiconductor structure and method for forming the semiconductor structure are disclosed. The semiconductor structure may comprise a dielectric structure and one or more active areas or one or more field areas, for example, disposed proximate to the dielectric structure along a perimeter thereof. The dielectric structure and the other areas may be separated by one or more trenches or gaps to provide stress relief between the dielectric structure and the other areas. The one or more trenches may include one or more silicon formations formed there between to provide a spring like function and further provide stress relief between the dielectric structure and the other areas. Stress relief of the trenches may be further enhanced via hydrogen annealing to smooth sharp corners or other sharp features of the trenches such as scalloping. | 2010-09-16 |
20100230777 | SELECTIVE STI STRESS RELAXATION THROUGH ION IMPLANTATION - A first example embodiment comprises the following steps and the structure formed therefrom. A trench having opposing sidewalls is formed within a substrate. A stress layer having an inherent stress is formed over the opposing trench sidewalls. The stress layer having stress layer sidewalls over the trench sidewalls. Ions are implanted into one or more portions of the stress layer to form ion-implanted relaxed portions with the portions of the stress layer that are not implanted are un-implanted portions, whereby the inherent stress of the one or more ion-implanted relaxed portions of stress layer portions is relaxed. | 2010-09-16 |
20100230778 | METHOD OF FABRICATING A FLASH MEMORY AND AN ISOLATING STRUCTURE APPLIED TO A FLASH MEMORY - A method of fabricating a flash memory and an isolating structure applied to a flash memory is provided. The feature of the method lies in a T-shaped shallow trench isolation (STI). The T-shaped STI has a widened cap covering on a substrate and a tapered bottom embedded in the substrate. The widened cap of the T-shaped STI can provide a high process widow when fabricating the floating gate wings, and the product yield will thereby be increased. | 2010-09-16 |
20100230779 | TRENCH GENERATED DEVICE STRUCTURES AND DESIGN STRUCTURES FOR RADIOFREQUENCY AND BICMOS INTEGRATED CIRCUITS - Trench-generated device structures fabricated using a semiconductor-on-insulator (SOI) wafer, design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, as well as methods for fabricating trench-generated device structures. The device structure includes a trench extending through the semiconductor and insulator layers of the SOI wafer and into the underlying semiconductor substrate, and a first doped region in the semiconductor substrate. The doped region, which extends about the trench, has a second conductivity type opposite to the first conductivity type. The device structure further includes a first contact extending from the top surface through the semiconductor and insulator layers to a portion of the semiconductor substrate outside of the doped region, and a second contact extending from the top surface through the semiconductor and insulator layers to the doped region in the semiconductor substrate. | 2010-09-16 |
20100230780 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device realizing reliable cutting of a fuse without enlarging layout area of a fuse element and the reduced number of wiring layers of a preventing wall that prevents diffusion of fuse copper atoms. A fuse is formed by using a wire in a metal wiring layer as an upper layer in a plurality of metal wiring layers. Wires are disposed just above and just below a fuse each with a gap of at least two wiring layers. In an upper layer, a power wire that transmits power supply voltage is used as a part covering a preventing wall structure just above the fuse. | 2010-09-16 |
20100230781 | TRENCH ANTI-FUSE STRUCTURES FOR A PROGRAMMABLE INTEGRATED CIRCUIT - Trench anti-fuse structures, design structures embodied in a machine readable medium for designing, manufacturing, or testing a programmable integrated circuit. The anti-fuse structure includes a trench having a plurality of sidewalls that extend into a substrate, a doped region in the semiconductor material of the substrate proximate to the sidewalls of the trench, a conductive plug in the trench, and a dielectric layer on the sidewalls of the trench. The dielectric layer is disposed between the conductive plug and the doped region. The dielectric layer is configured so that a programming voltage applied between the doped region and the conductive plug causes a breakdown of the dielectric layer within a region of the trench. The trench sidewalls are arranged with a cross-sectional geometrical shape that is independent of position between a bottom wall of the deep trench and a top surface of the substrate. | 2010-09-16 |
20100230782 | SEMICONDUCTOR DEVICE - A first semiconductor chip includes a first inductor and a second inductor, and a second semiconductor chip includes a third inductor and a fourth inductor. The first inductor is connected to a first receiving circuit of the first semiconductor chip, and the second inductor is connected to a second transmitting circuit of the second semiconductor chip through a first bonding wire. The third inductor is connected to a second receiving circuit of the second semiconductor chip, and the fourth inductor is connected to a first transmitting circuit of the first semiconductor chip through a second bonding wire. | 2010-09-16 |
20100230783 | SEMICONDUCTOR DEVICE - A semiconductor device sends and receives electrical signals. The semiconductor device includes a first substrate provided with a first circuit region containing a first circuit; a multi-level interconnect structure provided on the first substrate; a first inductor provided in the multi-level interconnect structure so as to include the first circuit region; and a second inductor provided in the multi-level interconnect structure so as to include the first circuit region, wherein one of the first inductor and the second inductor is connected to the first circuit and the other of the first inductor and the second inductor is connected to a second circuit. | 2010-09-16 |
20100230784 | Semiconductor Packaging with Integrated Passive Componentry - The invention provides advances in the arts with useful and novel integrated packaging having passive components included within packages also containing one or more ICs. The integrated passive components may include inductors, transformers, and capacitors, and are preferably constructed of leadframe materials. Typically, one or more magnetic field storage body is used in forming the coils in order to enhance the electrical performance characteristics of the passive component. | 2010-09-16 |
20100230785 | INDUCTIVELY COUPLED INTEGRATED CIRCUIT AND METHODS FOR USE THEREWITH - A circuit includes a first integrated circuit or die having a first circuit and a first inductive interface. A second integrated circuit or die has a second circuit and a second inductive interface. The first inductive interface and the second inductive interface are aligned to magnetically communicate signals between the first circuit and the second circuit. | 2010-09-16 |
20100230786 | PRODUCTION OF INTEGRATED CIRCUITS COMPRISING SEMICONDUCTOR INCOMPATIBLE MATERIALS - It is described a procedure for the integration of semiconductor incompatible materials in a process family created for the production of passive electric components and active electric components formed within integrated circuits. The procedure is applicable in known techniques like bipolar, MOS or BIMOS processes for semiconductor production. The modular concept of the described procedure may combine diodes, resistors and capacitors, which components are made from different materials. The provision of an encapsulation material for a semiconductor incompatible material enables the manufacturing of integrated circuits even within a sensitive environment with respect to contaminations originating from the semiconductor incompatible material. The encapsulation is provided early within the manufacturing process such that the risk for a contamination may be reduced to a minimum. Further, it is described an integrated circuit element and an integrated circuit comprising an encapsulated semiconductor incompatible material. The semiconductor incompatible material may be a lead containing ceramics, in particular Lead Lanthanum Zirconium Titanate (PLZT), which is used for ferroelectric capacitors and which represents a highly contaminating substance in particular for ‘heavy metal sensitive’ environments. | 2010-09-16 |
20100230787 | ELECTRIC DEVICE COMPRISING AN IMPROVED ELECTRODE - The invention relates to an electric device including an electric element, the electric element comprising a first electrode ( | 2010-09-16 |
20100230788 | CHIP STRUCTURE, WAFER STRUCTURE AND PROCESS OF FAABRICATING CHIP - A chip structure includes a substrate and a stress buffer layer. The substrate has a first surface and a second surface opposite to the first surface. The stress buffer layer is disposed on the periphery of the substrate and located in at least one of the first surface and the second surface of the substrate. | 2010-09-16 |
20100230789 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A technology is provided which allows a reduction in the size of a semiconductor device without degrading an electromagnetic shielding effect and reliability against reflow heating. After a plurality of components are mounted over a component mounting surface of a module substrate, a resin is formed so as to cover the mounted components. Further, over surfaces (upper and side surfaces) of the resin, a shield layer including a laminated film of a Cu plating film and an Ni plating film is formed. In the shield layer, a plurality of microchannel cracks are formed randomly along grain boundaries and in a net-like configuration without being coupled to each other in a straight line, and form a plurality of paths extending from the resin to a surface of the shield layer by the microchannel cracks. | 2010-09-16 |
20100230790 | Semiconductor Carrier for Multi-Chip Packaging - A power semiconductor product includes a carrier attached to a leadframe. An insulating layer is formed on the carrier and two or more conductive plates are patterned on the insulating layer. A control IC is attached to one of these conductive plates and a power transistor is attached to the other. Bond wires connect the first conductive plate to a pin on the leadframe. Additional bond wires attach the control IC to pins on the leadframe and form connections between the control IC and the power transistor. | 2010-09-16 |
20100230791 | LEADFRAME PACKAGE FOR LIGHT EMITTING DIODE DEVICE - An LED leadframe package with surface tension function to enable the production of LED package with convex lens shape by using dispensing method is disclosed. The LED leadframe package of the invention is a PPA supported package house for LED packaging with metal base, four identical metal electrodes, and PPA plastic to fix the metal electrodes and the heat dissipation base together, four ring-alike structures with a sharp edge and with a tilted inner surface, and three ring-alike grooves formed between sharp edge ring-alike structures. | 2010-09-16 |
20100230792 | Premolded Substrates with Apertures for Semiconductor Die Packages with Stacked Dice, Said Packages, and Methods of Making the Same - Disclosed are premolded substrates for semiconductor die packages and methods of making such substrates. An exemplary premolded substrate comprises a leadframe having a first surface, a second surface, a central portion disposed between the first and second surfaces, and a plurality of electrically conductive leads disposed about the central portion; a body of electrically insulating material disposed in a portion of the central portion of the leadframe and between the leads of the leadframe; and an aperture disposed in the leadframe's central portion and between the leadframe's first and second surfaces. | 2010-09-16 |
20100230793 | SEMICONDUCTOR APPARATUS PACKAGING STRUCTURE, SEMICONDUCTOR APPARATUS PACKAGING METHOD, AND EMBOSSED TAPE - A TAB tape ( | 2010-09-16 |
20100230794 | Method For Fabricating Semiconductor Components Using Maskless Back Side Alignment To Conductive Vias - A method for fabricating semiconductor components includes the steps of: providing a semiconductor substrate having a circuit side, a back side and conductive vias; removing portions of the substrate from the back side to expose terminal portions of the conductive vias; depositing a polymer layer on the back side encapsulating the terminal portions; and then planarizing the polymer layer and ends of the terminal portions to form self aligned conductors embedded in the polymer layer. Additional back side elements, such as terminal contacts and back side redistribution conductors, can also be formed in electrical contact with the conductive vias. A semiconductor component includes the semiconductor substrate, the conductive vias, and the back side conductors embedded in the polymer layer. A stacked semiconductor component includes a plurality of components having aligned conductive vias in electrical communication with one another. | 2010-09-16 |
20100230795 | STACKED MICROELECTRONIC ASSEMBLIES HAVING VIAS EXTENDING THROUGH BOND PADS - A stacked microelectronic assembly is provided which includes first and second stacked microelectronic elements. Each of the first and second microelectronic elements can include a conductive layer extending along a face of such microelectronic element. At least one of the first and second microelectronic elements can include a recess extending from the rear surface towards the front surface, and a conductive via extending from the recess through the bond pad and electrically connected to the bond pad, with a conductive layer connected to the via and extending along a rear face of the microelectronic element towards an edge of the microelectronic element. A plurality of leads can extend from the conductive layers of the first and second microelectronic elements and a plurality of terminals of the assembly can be electrically connected with the leads. | 2010-09-16 |
20100230796 | INTEGRATED CIRCUIT PACKAGE-IN-PACKAGE SYSTEM AND METHOD FOR MAKING THEREOF - A method for making an integrated circuit package-in-package system includes: forming a first integrated circuit package including a first device and a first substrate and having a first interface; stacking a second integrated circuit package including a second device and a second substrate and having a second interface above the first integrated circuit package; and fitting the first interface directly on the second interface. | 2010-09-16 |
20100230797 | WARP-SUPPRESSED SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor chip mounted on a mounting substrate; a first resin filling a gap between the chip and the substrate; a frame-shaped stiffener surrounding the chip; a first adhesive for bonding the stiffener to the substrate; a lid for covering the stiffener and an area surrounded by the stiffener; and a second resin filling a space between the stiffener and the chip. A thermal expansion coefficient of the second resin is smaller than that of the first resin. The first resin includes an underfill part filling a gap between the chip and the substrate and a fillet part extended from the chip region. | 2010-09-16 |
20100230798 | SEMICONDUCTOR DEVICE INCLUDING SPACER ELEMENT - A semiconductor device includes a metal carrier and a spacer element attached to the metal carrier. The semiconductor device includes a first sintered metal layer on the spacer element and a semiconductor chip on the first sintered metal layer. | 2010-09-16 |
20100230799 | SEMICONDUCTOR DEVICE - A semiconductor device includes a carrier, a chip attached to the carrier, and an encapsulation body disposed over the chip and the carrier. An exterior surface of the semiconductor device includes an exposed peripheral edge of at least two of the carrier, the chip, and the encapsulation body. | 2010-09-16 |
20100230800 | DOUBLE SIDE COOLED POWER MODULE WITH POWER OVERLAY - A power module includes one or more semiconductor power devices having a power overlay (POL) bonded thereto. A first heat sink is bonded to the semiconductor power devices on a side opposite the POL. A second heat sink is bonded to the POL opposite the side of the POL bonded to the semiconductor power devices. The semiconductor power devices, POL, first channel heat sink, and second channel heat sink together form a double side cooled power overlay module. The second channel heat sink is bonded to the POL solely via a compliant thermal interface material without the need for planarizing, brazing or metallurgical bonding. | 2010-09-16 |
20100230801 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor device including an interconnect substrate having a cavity structure and a semiconductor element mounted on a bottom part of the cavity structure; and a second semiconductor device provided on and connected to the first semiconductor device via connection terminals. A sealing material is provided between the first semiconductor device and the second semiconductor device. A sloped portion is formed, at a corner portion at which the bottom part and a side wall of the cavity structure in the first semiconductor device meets, to be sloped toward a center part of the cavity structure and have a tapered shape which becomes continuously wider in the direction from an upper part to a lower part. | 2010-09-16 |
20100230802 | METALLIC SOLDERABILITY PRESERVATION COATING ON METAL PART OF SEMICONDUCTOR PACKAGE TO PREVENT OXIDE - Embodiments of the present invention are directed to metallic solderability preservation coating on connectors of semiconductor package to prevent oxide. Singulated semiconductor packages can have contaminants, such as oxides, on exposed metal areas of the connectors. Oxidation typically occurs on the exposed metal areas when the semiconductor packages are not stored in appropriate environments. Copper oxides prevent the connectors from soldering well. An anti-tarnish solution of the present invention is used to coat the connectors during sawing, after sawing, or both of a semiconductor array to preserve metallic solderability. The anti-tarnish solution is a metallic solution, which advantageously allows the semiconductor packages to not need be assembled immediately after fabrication. | 2010-09-16 |
20100230803 | ELECTRONIC DEVICE PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a method for forming an electronic device package, which includes providing a carrier substrate having an upper surface and an opposite lower surface; forming a cavity from the upper surface of the carrier substrate; disposing an electronic device having a conducting electrode in the cavity; forming a filling layer in the cavity, wherein the filling layer surround the electronic device; thinning the carrier substrate from the lower surface to a predetermined thickness; forming at least a through-hole in the electronic device or the in the carrier substrate; and forming a conducting layer over a sidewall of the through-hole, wherein the conducting layer electrically connects to the conducting electrode. | 2010-09-16 |
20100230804 | THERMAL RESISTOR, SEMICONDUCTOR DEVICE USING THE SAME, AND ELECTRIC DEVICE - A thermal resistor is a metal body having a contact surface to be partially in contact to form a void and is electrically conductive as a whole. The thermal body may be a layered body having a plurality of metal bodies layered so as to be partially in contact with one another to form a void between them, or a metal body having a plurality of convex and concave portions on the surface, or a metal body formed by a plurality of metal plates each having a plurality of creases and layered so that the creases of the adjacent metal plates intersect, or a layered metal body formed by metal plates each having elasticity in the thickness direction and having elasticity in the layered direction as a whole, or metal body having a film formed by a different metal. Also disclosed in a semiconductor device having the thermal resistor inserted between a heating semiconductor element and a case cover and between a heat spreader and the case cover. Also disclosed is an electric device using the device. | 2010-09-16 |
20100230805 | MULTI-DIE SEMICONDUCTOR PACKAGE WITH HEAT SPREADER - A semiconductor device includes first and second stacked semiconductor dies on a substrate. A lid having a plurality of fins extending downwardly into the cavity is mounted on the substrate to encapsulate the semiconductor dies. At least some of the fins are longer than other ones of said fins. The lid is attached to the substrate, with the longer fins extending downwardly above a region of the substrate not occupied by the first die. The shorter fins extend downwardly above a region of said first die not covered by said second die. A thermal interface material fills the remainder of the cavity and is in thermal communication with both dies, the substrate and the fins. The lid may be molded from metal. The lid may be bonded to the topmost die, using a thermal bonding material that may be liquid metal, or the like. | 2010-09-16 |
20100230806 | Semiconductor Device and Method of Forming Three-Dimensional Vertically Oriented Integrated Capacitors - A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the conductive pillars. A conformal conductive layer is formed over the conformal insulating layer. A first conductive pillar, conformal insulating layer, and conformal conductive layer constitute a vertically oriented integrated capacitor. A semiconductor die or component is mounted over the carrier. An encapsulant is deposited over the semiconductor die or component and around the conformal conductive layer. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure includes an integrated passive device. The first interconnect structure is electrically connected to the semiconductor die or component and vertically oriented integrated capacitor. The carrier is removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first side of the encapsulant. | 2010-09-16 |
20100230807 | Method and Apparatus to Repair Defects in Nonvolatile Semiconductor Memory Devices - A method of repairing a nonvolatile semiconductor memory device to eliminate defects includes monitoring a memory endurance indicator for a nonvolatile semiconductor memory device contained in a semiconductor package. It is determined whether that the memory endurance indicator exceeds a predefined limit. Finally, in response to determining that the memory endurance indicator exceeds the predefined limit, the device is annealed. | 2010-09-16 |
20100230808 | REDUCING STRESS BETWEEN A SUBSTRATE AND A PROJECTING ELECTRODE ON THE SUBSTRATE - The present invention relates to a semiconductor component that has a substrate and a projecting electrode. The projecting electrode has a substrate face, which faces the substrate and which comprises a first substrate-face section separated from the substrate by a gap. The gap allows a stress-compensating deformation of the projecting electrode relative to the substrate. The substrate face of the projecting electrode further comprises a second substrate-face section, which is in fixed mechanical and electrical connection with the substrate. Due to a smaller footprint of mechanical connection between the projecting electrode and the substrate, the projecting electrode can comply in three dimensions to mechanical stress exerted, without passing the same amount of stress on to the substrate, or to an external substrate in an assembly. This results in an improved lifetime of an assembly, in which the semiconductor component is connected to an external substrate by the projecting electrode. | 2010-09-16 |
20100230809 | WIRE LOOP AND METHOD OF FORMING THE WIRE LOOP - A method of forming a wire loop is provided. The method includes: (1) forming a first fold of wire; (2) bonding the first fold of wire to a first bonding location to form a first bond; (3) extending a length of wire, continuous with the first bond, between (a) the first bond and (b) a second bonding location; and (4) bonding a portion of the wire to the second bonding location to form a second bond. | 2010-09-16 |
20100230810 | FLIP CHIP SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - There is provide a flip chip semiconductor package comprising: an electrode pad formed a semiconductor substrate; a lower metal bonding layer formed on the electrode pad; an upper metal bonding layer formed on the lower metal bonding layer and having a post shape of a predetermined height; and a conductive bump formed on the upper metal bonding layer, and a solder bump covers at least partially the surface of the upper metal bonding layer. An insulating layer for electrode reconfiguration is formed around the electrode pad on the substrate, and the insulating layer has a predetermined thickness to prevent the penetration of a particles from the solder bump. The semiconductor package may further comprise an oxidation preventing layer between the solder bump and the upper metal bonding layer. In accordance with the present invention, there is realized the flip chip semiconductor package which improves the adhesive strength of the solder bump and which more improves the reliability in the flip chip bump structure of fine pitches. | 2010-09-16 |
20100230811 | SEMICONDUCTOR DEVICE HAVING A CONDUCTIVE BUMP - In one embodiment, a semiconductor device includes a semiconductor substrate and a bonding pad disposed thereon. The semiconductor device also includes a passivation layer, a buffer layer, and an insulating layer sequentially stacked on the semiconductor substrate. According to one aspect, a first recess is defined within the passivation layer, the buffer layer, and the insulating layer to expose at least a region of the bonding pad and a second recess is defined within the insulating layer to expose at least a region of the buffer layer and spaced apart from the first recess such that a portion of the insulating layer is interposed therebetween. Further, the semiconductor device includes a conductive solder bump disposed within the first and second recesses. The conductive solder bump may be connected to the bonding pad in the first recess and supported by the buffer layer through a protrusion of the conductive solder bump extending into the second recess. | 2010-09-16 |
20100230812 | Microelectronic Assemblies Having Compliancy and Methods Therefor - A microelectronic assembly is disclosed that includes a semiconductor wafer with contacts, compliant bumps of dielectric material overlying the first surface of the semiconductor wafer, and a dielectric layer overlying the first surface of the semiconductor wafer and edges of the compliant bumps. The compliant bumps have planar top surfaces which are accessible through the dielectric layer. Conductive traces may be electrically connected with contacts and extend therefrom to overlie the planar top surfaces of the compliant bumps. Conductive elements may overlie the planar top surfaces in contact with the conductive traces. | 2010-09-16 |
20100230813 | Semiconductor Constructions and Methods of Forming Layers - The invention includes methods of forming layers conformally over undulating surface topographies associated with semiconductor substrates. The undulating surface topographies can first be exposed to one or more of titanium oxide, neodymium oxide, yttrium oxide, zirconium oxide and vanadium oxide to treat the surfaces, and can be subsequently exposed to a material that forms a layer conformally along the treated surfaces. The material can, for example, comprise one or both of aluminum silane and aluminum silazane. The invention also includes semiconductor constructions having conformal layers formed over liners containing one or more of titanium oxide, yttrium oxide, zirconium oxide and vanadium oxide. | 2010-09-16 |
20100230814 | NANOSCALE, SPATIALLY-CONTROLLED GA DOPING OF UNDOPED TRANSPARENT CONDUCTING OXIDE FILMS - An article of manufacture comprising a nanowire and methods of making the same. In one embodiment, the nanowire includes a Ga-doped trace formed on a surface of an indium oxide layer having a thickness in nano-scale, and wherein the Ga-doped trace is formed with a dimension that has a depth is less than a quarter of the thickness of the indium oxide layer. In one embodiment, the indium oxide layer, which is optically transparent and electrically insulating, comprises an In | 2010-09-16 |
20100230815 | SEMICONDUCTOR DEVICE - Semiconductor devices and methods for fabricating the same. An exemplary device includes a substrate, a dielectric layer, a protection layer, and a conformal barrier layer. The dielectric layer overlies the substrate and comprises an opening. The opening comprises a lower portion and a wider upper portion, exposing parts of the substrate. The bottoms of the upper portion act as shoulders of the opening. The protection layer overlies at least one shoulder of the opening. The conformal barrier layer is disposed in the opening and overlies the protection layer and the dielectric layer, wherein etching resistance of the protection layer against inert-gas plasma is higher than that of the barrier layer. | 2010-09-16 |
20100230816 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - Semiconductor devices and methods for forming the same in which damages to a low-k dielectric layer therein can be reduced or even prevented are provided. A semiconductor device is provided, comprising a substrate. A dielectric layer with at least one conductive feature therein overlies the substrate. An insulating cap layer overlies the top surface of the low-k dielectric layer adjacent to the conductive feature, wherein the insulating cap layer comprises metal ions. | 2010-09-16 |
20100230817 | Using Unstable Nitrides to Form Semiconductor Structures - Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place. | 2010-09-16 |
20100230818 | Through Substrate Via Semiconductor Components - A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening. | 2010-09-16 |
20100230819 | Semiconductor Constructions - Some embodiments include semiconductor processing methods in which a copper barrier is formed to be laterally offset from a copper component, and in which nickel is formed to extend across both the barrier and the component. The barrier may extend around an entire lateral periphery of the component, and may be spaced from the component by an intervening ring of electrically insulative material. The copper component may be a bond pad or an interconnect between two levels of metal layers. Some embodiments include semiconductor constructions in which nickel extends across a copper component, a copper barrier is laterally offset from the copper component, and an insulative material is between the copper barrier and the copper component. | 2010-09-16 |
20100230820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap. | 2010-09-16 |
20100230821 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 2010-09-16 |
20100230822 | Semiconductor Die and Method of Forming Noise Absorbing Regions Between THVS in Peripheral Region of the Die - A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV. | 2010-09-16 |
20100230823 | SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: an electronic component including an electrode pad forming face on which electrode pads are formed, a back face opposite to the electrode pad forming face; a sealing resin including a first face provided on the electrode pad forming face side and a second face provided on the back face side, and provided around the electronic component to seal up a side face of the electrode component; a multilayer wiring structure which is provided on the first face, and in which insulating layers, a wiring pattern and external connecting pads are stacked on each other; and a conductive member which is provided in a through-hole passing through the sealing resin and the insulating layer. The wiring pattern is directly connected to the electrode pads and the external connecting pads, and includes a wiring provided in the insulating layers. The conductive member is connected to the wiring. | 2010-09-16 |
20100230824 | Metal Interconnect of Semiconductor Device - Provided are a metal interconnect of a semiconductor device and a method of fabricating the metal interconnect. The metal interconnect includes a metal line having a first end and a second end disposed on an opposite side to the first end, a via electrically connected to the metal line, and a non-active segment extending from the first end and including a void. Tensile stress is decreased to prevent a void from occurring under the via. Accordingly, line breakage due to electromigration is substantially prevented, thus improving electrical characteristics of the device. | 2010-09-16 |
20100230825 | Flexible Packaging for Chip-on-Chip and Package-on-Package Technologies - In one embodiment, a packaging solution for an application integrated circuit (IC) and one or more other ICs is provided. The packaging solution may support both chip-on-chip packaging of the application IC (in flip-chip connection to a package substrate) and other ICs (in non-flip chip orientation), and package-on-package packaging of the application IC and the other ICs. The package substrate may include a first set of pads proximate to the application IC to support chip-on-chip connection to the other ICs. The pads may be connected to conductors that extend underneath the application IC, to connect to the application IC. A second set of pads may be connected to package pins for package-on-package solutions. If the chip-on-chip solution proves reliable, support for the package-on-package solution may be eliminated and the package substrate may be reduced in size. | 2010-09-16 |
20100230826 | INTEGRATED CIRCUIT PACKAGE ASSEMBLY AND PACKAGING METHOD THEREOF - An integrated circuit (IC) package assembly includes a substrate including a plurality of golden fingers, a bonding pad integrally formed with the substrate, an IC fixed on the bonding pad, and a plurality of bonding wires. The IC includes a plurality of connecting pads. A width and a length of the IC are greater than a width and a length of the bonding pad. The plurality of bonding wires electrically connect the plurality of connecting pads to the plurality of golden fingers. | 2010-09-16 |
20100230827 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip that is mounted face-down on a substrate, a second semiconductor chip that is mounted face-up on the first semiconductor chip, and a dummy chip that is interposed between the first semiconductor chip and the second semiconductor chip. The dummy chip is made from a homogenous material comprising silicon or an alloy containing an atomic percentage majority of silicon. | 2010-09-16 |
20100230828 | MICROELECTRONIC ASSEMBLY WITH IMPEDANCE CONTROLLED WIREBOND AND CONDUCTIVE REFERENCE ELEMENT - A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements. | 2010-09-16 |
20100230829 | ORGANIC LIGHT EMITTING DEVICES HAVING LATENT ACTIVATED LAYERS AND METHODS OF FABRICATING THE SAME - An organic light emitting device with a latent activator material is presented. An organic light emitting device including activation products of a latent activator material is also presented. Embodiments of patterned organic light emitting devices are also contemplated wherein patterning can occur prior or post fabrication of the devices. A method of fabricating an organic light emitting device with a latent activator material or with activation products of an activator material is also provided. | 2010-09-16 |
20100230830 | Systems and Methods for Processing CO2 - Systems and methods for lowering levels of carbon dioxide and other atmospheric pollutants are provided. Economically viable systems and processes capable of removing vast quantities of carbon dioxide and other atmospheric pollutants from gaseous waste streams and sequestering them in storage-stable forms are also discussed. | 2010-09-16 |
20100230831 | PRESSURIZED WATER EVAPORATION SYSTEM AND METHOD OF EVAPORATING WATER - Pressurized water evaporation systems and methods are used to evaporate large quantities of water from water impoundment ponds or other waste water sources. Water evaporation systems include one or more water evaporation barrels having an air acceleration chamber, water atomization chamber, and pressurizable air and water lines in fluid communication with the barrel. Fast moving air and water create fine water droplets within the water atomization chamber of each barrel. A fine spray or mist of tiny water droplets is emitted from a discharge nozzle of each barrel. Water evaporation systems and methods can be used to efficiently evaporate waster water produced by a wide variety of industrial processes, including waste water produced at oil or gas wells. | 2010-09-16 |
20100230832 | RANDOM PACKING ELEMENTS AND COLUMN CONTAINING SAME - A saddle-shaped random packing element is provided with laterally spaced, arcuate side members and a plurality of inner and outer rib elements that extend from and between the side members to form an interior volume. At least one lesser rib element extends from the side members and is at least partially positioned within the interior volume so that at least about 20 percent of the surface area of the packing element is positioned within the interior volume. | 2010-09-16 |
20100230833 | Liquid Cartridge - A liquid cartridge comprises a vessel body for containing liquid, the vessel body comprising a plurality of surfaces, an oxygen outlet provided on one surface among the plurality of surfaces of the vessel body, and an oxygen input provided on a surface other than a furthest surface from the surface on which the oxygen outlet is formed among the plurality of surfaces of the vessel body. | 2010-09-16 |
20100230834 | BUBBLING SUPPLY SYSTEM FOR STABLE PRECURSOR SUPPLY - Embodiments of the invention generally provide apparatus and methods for vaporizing liquid precursors. In one embodiment, a bubbling system for supplying a vapor of liquid precursor is provided including a gas flow conduit having a first end and a second end, a nozzle structure connected to the second end of the gas flow conduit, and comprising one or more perforated conduits fluidly coupled with the second end of the gas flow conduit, and a plate disposed around the gas flow conduit and in a spaced relationship from the nozzle structure, wherein both the one or more perforated conduits and the plate extend radially from an axis of the gas flow conduit. | 2010-09-16 |
20100230835 | COMPOSITE POLYMER FIBERS - A composite polymer fiber comprises a polymer filler material and a plurality of polymer scattering fibers disposed within the filler material. At least one of the filler material and the scattering fibers is formed of a birefringent material. The refractive indices of the filler material and the scattering fibers can be substantially matched for light incident in a first polarization state on the composite polymer fiber and unmatched for light incident in an orthogonal polarization state. The scattering fibers may be arranged to form a photonic crystal within the composite fiber. The composite fibers may be extruded and may be formed into a yarn, a weave or the like. If the filler material is soluble, it may be washed out of the yarn or weave, and the scattering fibers may then be infiltrated with a resin that is subsequently cured. | 2010-09-16 |
20100230836 | IMPRINT MOLD AND IMPRINT MOLDING METHOD - An exemplary imprint mold includes a surface, a plurality of molding portions arranged on the surface and a plurality of contraposition symbols arranged around the molding portions. The contraposition symbols include two first contraposition symbols arranged parallel to a first axis, two second contraposition symbols arranged parallel to a second axis, and four third contraposition symbols. The first axis and the second axis are perpendicularly intersecting at a geometrical center of the surface. Any two selected of the four third contraposition symbols are symmetrically positioned relative to each other about one of the first axis, the second axis, and the geometrical center. | 2010-09-16 |
20100230837 | Release aids for releasing silicone hydrogel ophthalmic lenses - This invention includes methods and systems for processing hydrogel biomedical devices, such as ophthalmic lenses using polyethylene glycol to facilitate release of the devices from a mold part. | 2010-09-16 |
20100230838 | Systems and methods for producing contact lenses from a polymerizable compositon - Methods for producing contact lenses from a polymerizable composition are provided. The methods generally include providing a carrier carrying a plurality of molds each of which contains a polymerizable composition. A chamber is provided which contains a light source providing light to the chamber effective to facilitate polymerization of the polymerizable composition. The molds in the carrier are exposed to the light in the chamber. During this exposing, the light source is monitored, for example, using digital addressable lighting interface (DALI) technology. | 2010-09-16 |
20100230839 | Method for Producing Surface Convexes and Concaves - A method for producing surface convexes and concaves enabling easy and highly precise formation of desired convex and concave shapes using a photomask is provided. A mask member 20 having light transmitting sections and non-light transmitting sections is disposed over one side of a photosensitive film 10 consisting of a photosensitive resin composition with a light diffusing layer 30 disposed between the mask member 20 and the photosensitive film 10. Light is irradiated from a light source disposed on the side of the mask member 20 to expose the photosensitive film 10 through the light transmitting sections of the mask member 20, and exposed portions or unexposed portions of the photosensitive film 10 are removed by development to produce convexes and concaves on the photosensitive film 10 in shapes determined by shapes of the exposed portions or unexposed portions. In the light exposure, light exposure conditions such as haze of the light diffusing layer 30 are controlled so as to control the shapes of the exposed portions or unexposed portions. | 2010-09-16 |
20100230840 | Spray-Drying Process - A spray-drying process to prepare a spray-dried powder having: (a) anionic detersive surfactant; (b) from 0 wt % to 10 wt % zeolite builder; (c) from 0 wt % to 10 wt % phosphate builder; (d) optionally from 0 wt % to 10 wt % silicate salt; (e) optionally carbonate salt; (f) optionally polymeric material; and (g) optionally from 0 wt % to 10 wt % water, wherein, the process has the steps of: (i) spraying an aqueous slurry comprising: from (a) anionic detersive surfactant; (b) from 0 wt % to 20 wt % zeolite builder; (c) from 0 wt % to 20 wt % phosphate builder; (d) optionally from 0 wt % to 20 wt % silicate salt; (e) optionally carbonate salt; (f) optionally polymeric material; and (g) water, into a spray-drying zone, wherein the spray-drying zone is under negative pressure and wherein the air inlet air temperature into the spray-drying zone is greater than 150° C.; and (ii) drying the aqueous slurry to form a spray-dried powder. | 2010-09-16 |
20100230841 | AEROSOL METHOD AND APPARATUS, PARTICULATE PRODUCTS, AND ELECTRONIC DEVICES MADE THEREFROM - Provided is an aerosol method, and accompanying apparatus, for preparing powdered products of a variety of materials involving the use of an ultrasonic aerosol generator ( | 2010-09-16 |
20100230842 | Snow block apparatus - A four-sided open top forming mold body for material such as snow or sand having peripheral walls with in-turned flanges at a bottom thereof, a mold bottom adapted to rest against the in-turned flanges, inter-engaging edge portions of the bottom and configurations on the walls retaining the bottom in place until application of a force sufficient to overcome the retention whereby the bottom can push the molded material out of the mold, and the bottom can be re-snapped into position at the bottom before another material molding, the mold body adapted to receive an open ended receptacle such as a sandbag having a greater length than the height of the mold such that the receptacle open end can be closed when the receptacle is filled with material to the top of the mold. | 2010-09-16 |
20100230843 | MICROFILTRATION MEMBRANE WITH IMPROVED FILTRATION PROPERTIES - Method for producing this membrane from a casting solution comprising the hydrophobic first sulfone polymer and the hydrophilic second polymer in a solvent system, the method comprising the steps of pouring the casting solution, conditioned to a molding temperature, onto a carrier to form a film, which carrier has a temperature that is higher in comparison to the molding temperature, conveying the film through a climate-controlled zone, initiating the coagulation in a coagulation bath for the formation of a membrane structure, withdrawing the membrane structure from the carrier with a speed that is increased in comparison to the carrier speed, stabilizing, extracting, and subsequently drying the membrane. | 2010-09-16 |
20100230844 | Process for Producing Environmental Protection Wall Plate - A process for producing environmental protection wall plate, includes formulating raw materials including vegetable fiber powder, magnesium oxide powder, talc powder and rigid sour calcium powder in a proper ratio; stirring said raw materials with a stirrer; after stirring for a period of time, adding a solidification agent in said mixture with stirring to form a mix; pouring said mix in a plate mould; vibrating said plate mould with a vibrator to make the mix more compact; and finally, pressing the wall plate with the vibrator, and placing the wall plate for a period of time to gel and cure the wall plate; an environmental protection wall plate can be thus obtained through the above-described steps. | 2010-09-16 |
20100230845 | Process of making flowable hemostatic compositions and devices containing such compositions - The present invention is directed to processes of making flowable hemostatic compositions and devices that include the flowable hemostatic composition disposed therein, where a volume of a biocompatible liquid, a volume of a biocompatible gas, and an amount of solid particles of a biocompatible polymer are mixed together to form a substantially homogenous composition including a discontinuous gas phase and the solid particles substantially homogenously dispersed throughout a continuous liquid phase to form a flowable hemostatic composition, and the composition then transferred into a device suitable for applying the flowable hemostatic composition to a site of a body requiring hemostasis under conditions effective to maintain the substantially homogeneous dispersion of the gas phase and the solid particles throughout the liquid phase, wherein said transfer of said substantially homogenous hemostatic composition is conducted at an angle. | 2010-09-16 |
20100230846 | POLYMERIC STRUCTURES AND METHOD FOR MAKING SAME - Polymeric structures, methods for making same, fibrous structures comprising same and fibrous product incorporating same are provided. | 2010-09-16 |
20100230847 | Golf club grip and manufacturing method thereof - A golf club grip includes a first grip member and a second grip member. The first grip member has a dark color and a first material density. The second grip member which has a light color and a second material density which is greater than the first material density, wherein the first grip member is integrated with the second grip member in an edge-to-edge manner to form an elongated tubular structure. When the first grip member and the second grip member is heated to integrate with each other, particles of the second grip member crosses over the first grip member to form a predetermined amount of light color at the first grip member, while the light color formed at the first grip member is adapted to be overlaid by the dark color so as to render the light color and the dark color sharply distinguishable on the gold club grip. | 2010-09-16 |
20100230848 | CUTTER - A cutter includes a contacting surface, a stopping surface. The cutter defines a cutting hole through the contacting surface and the stopping surface, forming a cutting chin on the stopping surface. A molding assembly is also provided. | 2010-09-16 |
20100230849 | CUTTER - A cutter includes a contacting surface and a stopping surface opposite to the contacting surface. A distal end of the cutter defines a cutting groove through the contacting surface and the stopping surface, forming two opposite resisting blocks. The resisting blocks are located on both sides of the cutting groove. A molding assembly is also provided. | 2010-09-16 |
20100230850 | METHOD OF MANUFACTURE OF ONE-PIECE COMPOSITE PARTS USING A TWO-PIECE FORM INCLUDING A SHAPED POLYMER THAT DOES NOT DRAW WITH A RIGID INSERT DESIGNED TO DRAW - A polymer is formed into the shape of a one-piece composite part and then solidified by curing, setting, hardening or otherwise solidifying the polymer to form a shaped polymer form having a shape that does not draw. Composite material is laid up on the form and solidified to from the composite part. The rigidity required of the form to lay up the composite part can he provided by operating in the polymer form's glassy state, forming the shaped polymer form with a hollow core and placing a rigid insert designed to draw inside the hollow core with the polymer form in its elastomeric state or through a combination of both. In its elastomeric state the form becomes pliable (without relaxing to a different memorized shape) and can he drawn out of the one-piece composite part. Because the shape of the form does not draw, the form deforms as it is drawn. If used, the rigid insert is drawn out prior to removing the shaped polymer form. Upon removal, the polymer form in its elastomeric state returns to its original shape. The form may be used once and thrown away or reused to form multiple composite parts of the same shape. | 2010-09-16 |
20100230851 | Process And Device For Manufacturing A Composite Strand - The invention relates to a process and a device for manufacturing a composite strand formed by combining continuous glass filaments with continuous high-shrinkage organic thermoplastic filaments. | 2010-09-16 |
20100230852 | EXTRUSION OF POLYURETHANE COMPOSITE MATERIALS - Methods of extruding polyurethane composite materials are described. One method includes introducing at least one polyol and inorganic filler to a first conveying section of the extruder, transferring the at least one polyol and inorganic filler to a first mixing section of an extruder, mixing the at least one polyol and the inorganic filler in the first mixing section, transferring the mixed at least one polyol and inorganic filler to a second conveying section of the extruder, introducing a di- or poly-isocyanate to the second conveying section, transferring the mixed at least one polyol and inorganic filler and the di- or poly-isocyanate to a second mixing section, mixing the mixed at least one polyol and inorganic filler with the di- or poly-isocyanate in the second mixing section of the extruder to provide a composite mixture, and transferring the composite mixture to an output end of the extruder. Other related methods are also described. | 2010-09-16 |
20100230853 | METHOD FOR PRINTING PLASTIC INJECTION MOLDING - Disclosed is a method for printing a surface of a non-planar injection-molded object, wherein a thin plastic sheet is provided and printed with a desired pattern. A mold corresponding to a desired final product of injection molding is provided to press the plastic sheet so as to form a plastic shell that has a shape corresponding to the final product and can compliantly positioned in an injection mold. The plastic shell is positioned in an injection mold to combine with a plastic injection molding made with the injection mold. The pattern printed on the plastic sheet is shown on an inside surface of the final product through the plastic shell that is formed by hot pressing the plastic sheet and tightly combined with the final product so as to directly molded with the final product and is not susceptible to color fading or detachment due to abrasion, impact or washing. | 2010-09-16 |
20100230854 | METHOD AND A PLANT FOR MANUFACTURING A STORAGE CONTAINER FOR STORAGE OF NUCLEAR RADIATION MATERIAL - A method and a moulding plant for manufacturing a storage container for storage of nuclear radiation material, the container having an inner container part of a first thermoplastic material, an intermediate container part of radiation inhibiting material on the outside of the inner container part, and an outer container part of a second thermoplastic material moulded onto the outside of intermediate container part. First, second, third and fourth locations are present along a circular path. First, second and third sets of outer mould means are provided at said second, third and fourth locations, respectively, for enabling injection moulding of said inner container part, said intermediate container part and said outer container part, respectively, thereat and at least one mould core or a plurality of mutually spaced mould cores being movable by means of a rotary turntable to successively move from the first location to the second location, then from the second location to the third location, then from the third location to the fourth location, and then from the fourth location back to the first location. | 2010-09-16 |
20100230855 | Plunger, Encapsulating Device And Method For Sealing A Fitting Of A Plunger On A Plunger Housing - The invention relates to a plunger for feeding encapsulating material to a mould cavity, comprising at least one peripheral groove recessed into the cylinder casing of the plunger whereby a material part is placed in the groove which only partly fills the groove. The invention also related to a device for encapsulating electronic components mounted on a carrier. In addition, the invention also relates to a method for sealing a fitting of a plunger housing, which plunger is adapted to feed encapsulating material under pressure to a mould cavity. | 2010-09-16 |
20100230856 | APPARATUS, SYSTEM, AND METHOD OF MANUFACTURING A COMPOSITE TUBULAR USING A STIFFENED MANDREL - A stiffened mandrel used in the manufacture of a composite tubular. The mandrel is placed on a filament winding machine and is comprised of an outer and inner shell. A pressure source is connected to the mandrel to exert a tensile force on the outer shell to stiffen the mandrel and thereby prevent sagging and bending of the mandrel. The stiffened mandrel allows for the manufacture of a composite tubular without undesirable flexing, wrinkling, or contamination of the uncured composite. | 2010-09-16 |
20100230857 | PROCESS FOR MAKING AN EMBOSSED WEB - A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete apertures or depressions. Pressure is provided between the compliant substrate and the forming structure to force the precursor web into the apertures or depressions of forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements. | 2010-09-16 |
20100230858 | PROCESS FOR MAKING AN EMBOSSED WEB - A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete protruded elements and lands completely surrounding them. Pressure is provided between the compliant substrate and the forming structure to conform the precursor web to the forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements completely surrounded by land areas. | 2010-09-16 |
20100230859 | METHOD OF MANUFACTURE OF ONE-PIECE COMPOSITE PARTS WITH A POLYMER FORM THAT TRANSITIONS BETWEEN ITS GLASSY AND ELASTOMERIC STATES - A polymer is formed into the shape of a one-piece composite part and then solidified by curing, setting, hardening or otherwise solidifying the polymer to form a shaped polymer form having a shape that does not draw. Composite material is laid lip on the form and solidified to from the composite part. The rigidity required of the form to lay up the composite part can be provided by operating in the polymer form's glassy state, forming the shaped polymer form with a hollow core and placing a rigid insert designed to draw inside the hollow core with the polymer form in its elastomeric state or through a combination of both. In its elastomeric state the form becomes pliable (without relaxing to a different memorized shape) and can be drawn out of the one-piece composite part. Because the shape of the form does not draw, the form deforms as it is drawn. If used, the rigid insert is drawn out prior to removing the shaped polymer form. Upon removal, the polymer form in its elastomeric state returns to its original shape. The form may be used once and thrown away or reused to form multiple composite parts of the same shape. | 2010-09-16 |
20100230860 | Pressure sensing systems - A sensing system is provided for sensing the pressure of liquid in a vacuum chamber ( | 2010-09-16 |
20100230861 | SYSTEMS AND METHODS FOR MAKING PRODUCTS FROM GRANULAR RUBBER - Various embodiments of the present invention provide systems and methods for manufacturing crumb rubber products. In various embodiments, the product being manufactured is a floor mat, which may be a decorative floor mat or fatigue floor mat used in industrial applications. In various embodiments, a crumb rubber and binder mixture is dispensed into a pan and leveled within the pan using a vibratory leveling operation. A die release may then be applied and the pan conveyed into a press. The press may be equipped with an upper die, which is compressed against the crumb rubber in the pan. The press applies both heat and pressure to activate the binder, which bonds the crumb rubber granules together to form a cohesive mat. | 2010-09-16 |
20100230862 | MEDICAL DEVICES - Medical devices and related methods are disclosed. | 2010-09-16 |
20100230863 | SYSTEM FOR AND METHOD OF HEATING OBJECTS IN A PRODUCTION LINE - A system and method ( | 2010-09-16 |
20100230864 | Nanoimprint Lithography Template and Method of Fabricating Semiconductor Device Using the Same - Nanoimprint lithography templates and methods of fabricating semiconductor devices using the nanoimprint lithography templates are provided. The nanoimprint lithography template includes a transparent substrate having a first refractive index, a stamp pattern on a surface on the transparent substrate and having inclined sidewalls, and a coating layer formed on the inclined sidewalls of the stamp pattern, the coating layer having a second refractive index higher than the first refractive index. | 2010-09-16 |
20100230865 | METHOD FOR APPLYING A LAYER OF MATERIAL INSIDE A CYCLE TYRE - Method of applying a layer of material ( | 2010-09-16 |
20100230866 | PROCESS FOR MAKING AN EMBOSSED WEB - A process for making an embossed web. A precursor web is provided between a forming structure and a static pressure plenum. The forming structure has a plurality of discrete apertures or depressions. Pressure is provided by the static pressure plenum against the precursor web and the forming structure to force the precursor web into the apertures or depressions of forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements. | 2010-09-16 |
20100230867 | PROCESS FOR MAKING AN EMBOSSED WEB - A process for making an embossed web. A precursor web is provided between a forming structure and a static pressure plenum. The forming structure has a plurality of discrete protruded elements. Pressure is provided by the static pressure plenum against the precursor web and the forming structure to conform the precursor web to the discrete protruded elements of the forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements having open proximal ends. | 2010-09-16 |
20100230868 | Rotary Blow Molding Machine with Movable Clamp Assemblies and Method - A continuous blow molding machine includes a mechanism for shifting molds upstream during closing to reduce between-mold flash. | 2010-09-16 |
20100230869 | VACUUM PRESS MACHINE AND VACUUM PRESS METHOD - A vacuum press machine includes a platen on which a workpiece is placed, an elastic release sheet provided above the workpiece, a frame arranged above the platen and movable toward and away from the platen. The frame urges the release sheet toward the platen with the workpiece therebetween so that a first space, which is air-tightly closed, is formed between the release sheet and the platen when the frame is moved to contact the platen. A portion of the release sheet covering the workpiece presses the workpiece as the first space is vacuumed. After the pressing, the frame is moved away from the platen, and a release sheet conveying mechanism introduces an unused portion of the release sheet to between the platen and the frame, and discharges the used portion of the release sheet from between the platen and the frame. | 2010-09-16 |
20100230870 | METHOD FOR PRODUCING ALUMINUM TITANATE CERAMIC - A method for producing an aluminum titanate ceramic, which comprises subjecting, to forming, a raw material for aluminum titanate formation, containing Na | 2010-09-16 |
20100230871 | Method of Sintering Ceramic Materials - A method of sintering a ceramic material comprises increasing the temperature of the ceramic material to a first predetermined temperature and maintaining the temperature of the ceramic material at the first predetermined temperature for a predetermined time period to increase the grain size of the ceramic material. Increasing the temperature of the ceramic material to a second predetermined temperature, decreasing the temperature of the ceramic material to a third predetermined temperature to freeze the grain size of the ceramic material and maintaining the temperature of the ceramic material at the third predetermined temperature for a third predetermined time period to densify the ceramic material. Finally decreasing the temperature of the ceramic material to ambient temperature. The method increases the density of the ceramic material. Used for electrolyte layers of solid oxide fuel cells. | 2010-09-16 |