38th week of 2020 patent applcation highlights part 62 |
Patent application number | Title | Published |
20200294731 | ARAMID FIBER ELECTROCHEMICAL CAPACITOR AND PREPARATION METHOD THEREFOR - The invention discloses an aramid fiber electrochemical capacitor and a preparation method thereof. Silver nanoparticles, carbon nanotubes and polypyrrole were sequentially coated on the surface of the aramid fiber by chemical bonding to prepare an aramid fiber electrode. The two aramid fiber electrodes were wound with an electrolyte to obtain an aramid fiber electrochemical capacitor. Compared with the polymer fiber electrochemical capacitor prepared in the prior art, the aramid fiber electrochemical capacitor provided by the present invention has high specific capacitance, high energy density, high mechanical performance, high stability, good flexibility and wearability; moreover, the preparation method is controllable and suitable for large-scale applications. | 2020-09-17 |
20200294732 | UPPER MOLD FOR MLCC LAMINATION - An upper mold for MLCC lamination comprising: a vacuum head comprising a first area formed by a plurality of base holes, which communicate with an air channel formed on the upper surface, and by through-holes that connect the lower surface and respective base holes so as to communicate with each other such that air flows between the base holes and the lower surface, the first area having a predetermined area, and the vacuum head comprising a second area configured, thereby suctioning air; a mesh plate fixed to the lower surface of the vacuum head to have a size corresponding to that of the first area, the mesh plate having a porous structure such that, when air flows through the through-holes of the first area, suction and discharge can occur evenly; and a contact plate fixed to the lower surface of the vacuum head by adhesion of the second area. | 2020-09-17 |
20200294733 | KEY MODULE FOR A KEYBOARD, AND KEYBOARD - What is presented is a key module ( | 2020-09-17 |
20200294734 | Preparation Method of Rapid Composite of Long Silver-graphite Electrical Contact Material and Solder Strip Material - A preparation method of a rapid bonding of a long silver-graphite electrical contact material and a solder strip material includes the following steps: first step, making a silver-graphite spindle into a silver-graphite electrical contact sheet material by an extrusion process; second step, performing a sintering to composite a solder strip material with the silver-graphite electrical contact sheet material to obtain a composite blank; and third step, performing a rolling and a heat treatment on the composite blank for one or more times to complete the composite of the long silver-graphite electrical contact material and the solder strip material. The method is a method for preparing a silver-based electrical contact material and solder composite material. | 2020-09-17 |
20200294735 | Middle illuminated button switch - A middle illuminated button switch is provided, including a printed circuit board (PCB), a base and, a cover. A guide core is arranged between the base and the cover, a through hole is arranged at the bottom of the base and under the guide core. A light guide groove is provided at the lower end surface of the guide core, A light-emitting element is arranged on the upper end of the PCB, and the light-emitting element is inserted into the base from the through hole and embedded in the light guide groove. Since the light-emitting element is embedded in the base from the bottom to the top, and the light is emitted to the outside from the middle through the guide core, so as to realize the light-emitting effect in the middle of the button. The present disclosure can realize the middle of the button switch to emit light with good luminous effect. | 2020-09-17 |
20200294736 | SWITCH SEAT BODY STRUCTURE - A switch seat body structure includes a main body for assembling with a switch component. The main body is composed of a metal head section in the form of a thin sheet structure and a nonmetal belly section. The main body is defined with an axis. The metal head section has a first wall normal to or inclined from the axis and a second wall connected with the first wall and parallel to or inclined from the axis. The first and second walls together define a space. The nonmetal belly section fills the space to connect with entire sections of the first and second walls as an integrated body. The switch seat body assembling structure improves the problems that the processing and manufacturing processes are time-consuming and troublesome and the material cost is higher. | 2020-09-17 |
20200294737 | KEYSWITCH AND KEYBOARD THEREOF - A keyswitch includes a bottom board, a cap structure, a lifting mechanism, and an elastic member. The lifting mechanism is detachably connected to the cap structure and the bottom board to make the cap structure movable upward and downward relative to the bottom board. The elastic member is connected to the cap structure so as to be detached from the lifting mechanism together with the cap structure when the cap structure is separate from the lifting mechanism. | 2020-09-17 |
20200294738 | RESILIENT BODY AND KEYBOARD STRUCTURE - A resilient body and a keyboard structure are disclosed. The resilient body has a top portion, a bottom portion, a conducting post and an annular wall. The top portion has a first side wall and a first bottom surface. Before the resilient body is pressed, an angle is formed between the first side wall and the first bottom surface, wherein the angle is greater than 90°. The bottom portion has a second bottom surface. The conducting post is disposed under the first bottom surface. When the resilient body is pressed, the fire point of the resilient body is reached before the resilient body reaches the bottom point. | 2020-09-17 |
20200294739 | LIGHT-EMITTING KEYSWITCH, CAP STRUCTURE AND CAP STRUCTURE MANUFACTURING METHOD THEREOF - A light-emitting keyswitch includes a board, a lifting mechanism and a cap structure. The cap structure is assembled with the lifting mechanism to be movable upward and downward relative to the board and includes a cap and a light-emitting layer. The light-emitting layer includes first and second pad layers disposed on a lateral contour surface of the cap and spaced from each other, a lower electrode layer, a dielectric layer, an electroluminescent layer, an upper electrode layer and a transparent pattern layer stacked on a top surface of the cap, and an external trace structure. The lower and upper electrode layers are connected to the first and second pad layers respectively. The external trace structure is connected to the first and second pad layers for transmitting power to the upper and lower electrode layers, so as to drive the electroluminescent layer to emit light to the transparent pattern layer. | 2020-09-17 |
20200294740 | DIAL WHEEL MECHANISM AND CONTROL DEVICE - A remote controller includes a main body, a dial wheel mechanism arranged at the main body, and a controller configured to obtain rotation angle information of the dial wheel mechanism and control movement of an external device according to the rotation angle information. The dial wheel mechanism includes a support, a positioning member disposed at the support, and a rotating member rotatably disposed at the support. The positioning member includes an elastic arm. The rotating member is configured to rotate relative to the support, causing the elastic arm to abut against the support and to be elastically deformed. | 2020-09-17 |
20200294741 | SIDE KEY STRUCTURE AND ELECTRONIC DEVICE HAVING SAME - A side key structure of an electronic device includes a housing, a flexible circuit board, and a side key. The housing defines a receiving groove. The flexible circuit board includes a key switch. The side key includes a main key body, a fastener, and a pressing portion. The flexible circuit board is mounted on a sidewall of the receiving groove. The pressing portion and the fastener are arranged on a same side of the main key body. The main key body is partially received in the receiving groove. The fastener and the pressing portion pass through a second sidewall of the receiving groove. The fastener is mounted within the receiving groove. The main key body is configured to be pressed to cause the pressing portion to press the key switch to activate the key switch. | 2020-09-17 |
20200294742 | INSULATING MEDIUM FOR AN ELECTRIC ENERGY TRANSMISSION DEVICE - An insulating medium for an electric energy transmission device is a fluid at room temperature and atmospheric pressure and has at least the following components ≥50% by volume to ≤98% by volume of synthetic air, and ≥2% by volume to ≤50% by volume of an organic fluorine compound. An electric arc extinguishing medium and a fluid-insulated electric energy transmission device are also provided. | 2020-09-17 |
20200294743 | MICROELECTROMECHANICAL SYSTEMS SWITCH DIE - A microelectromechanical systems (MEMS) switch die having an N number of radio frequency (RF) MEMS switches, each having a anchored beam with a switch contact, a gate, and a terminal contact is disclosed. Also included is a MEMS-based decoder having logic gates comprised of logic MEMS switches that are configured to decode the coded signals to determine which of the N number of RF MEMS switches to open and close, apply a higher level gate voltage to each gate of the RF MEMS switches determined to be closed, wherein the higher gate voltage electrostatically pulls the anchored beam and brings the switch contact into electrical contact with the terminal contact, and apply a lower gate voltage to each gate of the RF MEMS switches to be opened, wherein the lower gate voltage releases the anchored beam and allows the switch contact to break electrical contact with the terminal contact. | 2020-09-17 |
20200294744 | COIL CONTROL DEVICE OF ELECTRONIC MAGNETIC CONTACTOR - A coil control device of an electronic magnetic contactor, comprises: an input power processing unit configured to convert and output an input power into a direct current power; an input voltage detecting unit configured to detect a voltage level of the direct current power outputted from the input power processing unit; a control unit configured to output a control signal for controlling current flowing in a coil using the voltage level detected by the input voltage detecting unit; and a switching unit configured to connect or cutoff the current flowing in the coil by switching according to the control signal from the control unit, wherein the control unit includes a gate driver electrically connected with the switching unit and configured to block noise from the coil. | 2020-09-17 |
20200294745 | RECREATIONAL VEHICLE POWER CONTROL MODULES AND SYSTEMS - Disclosed herein are control modules and methods for controlling recreational vehicle power in auxiliary systems. The control modules may be installed and/or retrofitted to connect with power systems in recreational vehicles and thereby control operation of auxiliary components, such as slide-outs and awnings, for example. The disclosed control modules and systems may be remotely and/or automatically operated and programmed via wireless devices and/or software applications. | 2020-09-17 |
20200294746 | POWER SUPPLY CIRCUIT, RELAY DEVICE AND POWER OVER ETHERNET SYSTEM - A power supply circuit, a relay device and a Power over Ethernet system related to the electronic technical field are provided. In the power supply circuit, each rectifier module has its positive output end connected to a positive supply pin, and a negative output end connected to a first end of a switch control module. The positive supply pin is connected to a positive terminal of a relay circuit in the relay device. The switch control module has a second end connected to a negative supply pin, and a control end connected to the positive supply pin. The negative supply pin is connected to a negative terminal of the relay circuit. The switch control module allows conduction between the first end and the second end when the rectifier module outputs a voltage greater than a preset threshold. The power supply circuit can supply power to the relay circuit of the relay device without increasing power wiring and affecting the normal power supply of the powered device by the power sourcing equipment. This improves the application flexibility of the POE technology. | 2020-09-17 |
20200294747 | RELAY - The subject matter discloses a relay, including a housing, static contact bridges, a moving contact bridge, a pushing mechanism and a detection assembly. The static contact bridges is arranged on the housing, the moving contact bridge is movably arranged in the housing between a conduction position where the moving contact bridge is conducted with the static contact bridges and a disconnection position where the moving contact bridge is disconnected from the static contact bridges, and the pushing mechanism is connected with the moving contact bridge and used for pushing the moving contact bridge to move between the conduction position and the disconnection position; the detection assembly comprises an auxiliary moving contact bridge and an auxiliary static contact bridge, the auxiliary moving contact bridge is connected with the pushing mechanism, the auxiliary static contact bridge is arranged on the housing, the auxiliary moving contact bridge is connected with the auxiliary static contact bridge when the moving contact bridge is at the conduction position, and the auxiliary moving contact bridge is disconnected from the auxiliary static contact bridge when the moving contact bridge is at the disconnection position. | 2020-09-17 |
20200294748 | ROTARY RELAY CONTACTOR - A contactor with a rotary actuation system, the contactor including a plurality of switching devices configured to switch a plurality of electrical circuits, a plurality of cam followers each operably coupled to one of the switching devices, wherein each cam follower is configured to actuate a switching device, and a cam mechanism, the cam pivotally attached to a point rotation, the cam having plurality of lobes about its perimeter, the cam in operable communication with each cam follower such that upon rotation of the cam mechanism, each cam follower engages a lobe of the plurality of lobes, it causes each cam follower to actuate the respective switching device. The contactor also includes an actuator connected to the cam, the actuator responsive to a control current and operable to rotate the cam and a controller, the controller operable to supply a control current the actuator. | 2020-09-17 |
20200294749 | ELECTRIC CONNECTION BOX - An electric connection box includes a housing, a first lid portion, a groove, and a protrusion. The housing includes an opening. The first lid portion includes a first body wall that closes the opening of the housing and a first peripheral wall extending from a periphery of the first body wall toward the housing. The groove is provided between the first peripheral wall and a wall portion arranged to be spaced apart from the first peripheral wall. The groove includes an opening in a side of the first body wall in an extending direction of the first peripheral wall. The protrusion is provided on the first lid portion and protruding toward the wall portion. The protrusion covers the opening of the groove. | 2020-09-17 |
20200294750 | Ion Source With Biased Extraction Plate - An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously. | 2020-09-17 |
20200294751 | AN ELECTRON SOURCE - An electron source in a gas-source mass spectrometer the electron source comprising: an electron emitter cathode presenting a thermionic electron emitter surface in communication with a gas-source chamber of the gas-source mass spectrometer for providing electrons there to; a heater element electrically isolated from the electron emitter cathode and arranged to be heated by an electrical current therein and to radiate heat to the electron emitter cathode sufficient to liberate electrons thermionically from said electron emitter surface, therewith to provide a source of electrons for use in ionising a gas the gas-source chamber. | 2020-09-17 |
20200294752 | DISPLAY PANEL, DISPLAY DEVICE AND METHOD FOR DETERMINING THE POSITION OF AN EXTERNAL OBJECT THEREBY - The present disclosure provides a display panel including at least one pixel region located in a display area, each pixel region includes: at least one first pixel including at least one display light-emitting sub-pixel and at least one near-infrared light-emitting sub-pixel, wherein the near-infrared light-emitting sub-pixel is configured to emit near-infrared light; and at least one second pixel including at least one display light-emitting sub-pixel and at least one near-infrared receiving sub-pixel, wherein the near-infrared receiving sub-pixel is configured to receive near-infrared light reflected from an external object and generate a measurement signal responsive to the external object. The present disclosure also provides a display device including the display panel, and a method for determining the position of an external object by the display device. | 2020-09-17 |
20200294753 | SPIRAL GROOVE BEARING ASSEMBLY WITH MINIMIZED DEFLECTION - A liquid metal or spiral groove bearing structure for an x-ray tube and associated process for manufacturing the bearing structure is provided in which journal bearing sleeve is formed with a number of structures thereon that function to dissipate heat transmitted to the sleeve during operation of the bearing assembly within the x-ray tube to minimize thermal deformation of the sleeve, thereby minimizing gap size alteration within the bearing assembly. The structures formed within the sleeve are slots disposed within the section of the sleeve in which the highest temperature gradients develop. The slots enable an increase in thermal conductance away from the sleeve while minimizing the stresses created from the deformation of the portion(s) of the sleeve between the slots. | 2020-09-17 |
20200294754 | SPIRAL GROOVE BEARING ASSEMBLY WITH MINIMIZED DEFLECTION - A liquid metal or spiral groove bearing structure for an x-ray tube and associated process for manufacturing the bearing structure is provided in which journal bearing sleeve is formed with a number of structures thereon that function to dissipate heat transmitted to the sleeve during operation of the bearing assembly within the x-ray tube to minimize thermal deformation of the sleeve, thereby minimizing gap size alteration within the bearing assembly. The structures formed within the sleeve are slots disposed within the section of the sleeve in which the highest temperature gradients develop. The slots enable an increase in thermal conductance away from the sleeve while minimizing the stresses created from the deformation of the portion(s) of the sleeve between the slots. | 2020-09-17 |
20200294755 | APPARATUS, SYSTEM AND TECHNIQUES FOR MASS ANALYZED ION BEAM - An apparatus may include a housing including an entrance aperture, to receive an ion beam. The apparatus may include an exit aperture, disposed in the housing, downstream to the entrance aperture, the entrance aperture and the exit aperture defining a beam axis, extending therebetween. The apparatus may include an electrodynamic mass analysis assembly disposed in the housing and comprising an upper electrode assembly, disposed above the beam axis, and a lower electrode assembly, disposed below the beam axis. The apparatus may include an AC voltage assembly, electrically coupled to the upper electrode assembly and the lower electrode assembly, wherein the upper electrode assembly is arranged to receive an AC signal from the AC voltage assembly at a first phase angle, and wherein the lower electrode assembly is arranged to receive the AC signal at a second phase angle, the second phase angle 180 degrees shifted from the first phase angle. | 2020-09-17 |
20200294756 | CHARGED PARTICLE RAY DEVICE AND CROSS-SECTIONAL SHAPE ESTIMATION PROGRAM - The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. | 2020-09-17 |
20200294757 | Charged Particle Beam Apparatus - An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens ( | 2020-09-17 |
20200294758 | Charged Particle Beam Device - The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column ( | 2020-09-17 |
20200294759 | METHOD AND SYSTEM FOR ZONE AXIS ALIGNMENT - Various methods and systems are provided for aligning zone axis of a sample with an incident beam. As one example, the alignment may be based on a zone axis tilt. The zone axis tilt may be determined based on locations of a direct beam and a zero order Laue zone in the diffraction pattern. The direct beam location may be determined based on diffraction patterns acquired with different incident angles. | 2020-09-17 |
20200294760 | APPARATUS AND METHOD FOR LARGE-SCALE HIGH THROUGHPUT QUANTITATIVE CHARACTERIZATION AND THREE-DIMENSIONAL RECONSTRUCTION OF MATERIAL STRUCTURE - An apparatus and method for a large-scale high-throughput quantitative characterization and three-dimensional reconstruction of a material structure. The apparatus having a glow discharge sputtering unit, a sample transfer device, a scanning electron microscope unit and a GPU computer workstation. The glow discharge sputtering unit can achieve large size (cm order), nearly flat and fast sample preparation, and controllable achieve layer-by-layer ablation preparation along the depth direction of the sample surface; rapid scanning electron microscopy (SEM) can achieve large-scale and high-throughput acquisition of sample characteristic maps. The sample transfer device is responsible for transferring the sample between the glow discharge sputtering source and the scanning electron microscope in an accurately positioning manner. The GPU computer workstation performs splicing, processing, recognition and quantitative distribution characterization on the acquired sample characteristic maps, and carries out three-dimensional reconstruction of the structure of the sample prepared by layer-by-layer sputtering. | 2020-09-17 |
20200294761 | Charged Particle Beam Apparatus - An imaging device images a sample holder held by a sample stage. At a front side (target side) of the imaging device, a light emitter device array and a mask array are provided. A plurality of light beams are generated by the light emitter device array. A plurality of center parts of the plurality of light beams are masked by the mask array. A plurality of shadows produced thereby are covered by a plurality of peripheral parts of the plurality of light beams. | 2020-09-17 |
20200294762 | OPTICAL SYSTEM WITH COMPENSATION LENS - An optical system used in a charged particle beam inspection system. The optical system includes one or more optical lenses, and a compensation lens configured to compensate a drift of a focal length of a combination of the one or more optical lenses from a first medium to a second medium. | 2020-09-17 |
20200294763 | IDENTIFYING FIDUCIAL MARKERS IN MICROSCOPE IMAGES - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for obtaining a microscope image that depicts a sample and a plurality of fiducial markers, identifying the plurality of fiducial markers in the image, and using the plurality of fiducial markers to register the image. Identifying the plurality of fiducial markers in the image includes comparing a spatial intensity distribution of a plurality of regions of the image to a reference distribution function. | 2020-09-17 |
20200294764 | CHARGED PARTICLE BEAM APPARATUS AND SAMPLE OBSERVATION METHOD USING THE SAME - A charged particle beam apparatus includes: an electromagnetic wave generation source | 2020-09-17 |
20200294765 | Dual Cathode Ion Source - An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller. | 2020-09-17 |
20200294766 | PLASMA GENERATION UNIT AND METHOD OF DISCRIMINATING STATE OF PHYSICAL QUANTITY WHICH IS USED FOR PLASMA GENERATION - A plasma generation unit according to an exemplary embodiment includes a dielectric window, a slot plate, and a probe group. The slot plate is provided on the dielectric window. The probe group includes a plurality of probes that are electric conductors, is provided in the dielectric window, and is used for detection of a physical quantity around the dielectric window. The dielectric window extends along the slot plate. Each of the plurality of probes is disposed on a circumference of a first circle centered on a reference position of the dielectric window, when viewed from above the dielectric window. | 2020-09-17 |
20200294767 | SUBSTRATE PROCESSING METHOD AND APPARATUS - A substrate processing apparatus for performing a predetermined processing on a substrate includes a power supply device configured to supply a DC power. The power supply device includes a power supply and a current detection unit configured to detect a current value of a DC power from the power supply. The current detection unit includes a plurality of current sensors used for detecting the current value in the current detection unit and having different detection ranges for the current value, and a switching unit configured to switch the current sensors. The power supply is controlled such that the DC power from the power supply is maintained at a set value based on a detection result of the current detection unit, and the switching unit switches the current sensors depending on the set value of the DC power from the power supply. | 2020-09-17 |
20200294768 | PLASMA PROCESSING APPARATUS AND ETCHING METHOD - According to one embodiment, a plasma processing apparatus includes a chamber, a substrate stage configured to support a substrate inside the chamber, and a plasma generation structure configured to generate plasma processing the substrate, in a space above the substrate inside the chamber. Further, the plasma processing apparatus includes an electromagnet including coils configured to apply a magnetic field to the space, and an electromagnet controller configured to cause pulsed electric currents, in each of which its direction and ON/OFF are pulsed, to flow through the coils. | 2020-09-17 |
20200294769 | PLASMA IGNITION CIRCUIT - A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS. | 2020-09-17 |
20200294770 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears. | 2020-09-17 |
20200294771 | METHODS AND APPARATUS FOR ETCHING SEMICONDUCTOR STRUCTURES - Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C | 2020-09-17 |
20200294772 | Spacecraft Propulsion Devices and Systems with Microwave Excitation - A thruster system for use in a spacecraft includes a microwave source, a resonant cavity coupled to the microwave source, wherein the microwave source is configured to generate a standing wave field in the resonant cavity, a nozzle provided at one end of the resonant cavity; and at least one injector configured to inject propellant into the resonant cavity so as to create a rotating circumferential flow. The standing wave field raises a temperature of the injected propellant to provide thrust by way of a hot gas exiting the resonant cavity via the nozzle. | 2020-09-17 |
20200294773 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A target object processed by performing a plasma processing method includes a first layer made of silicon oxide and a second layer containing carbon. A processing sequence performed repeatedly includes: etching the target object with the second layer as a mask by forming plasma from a first gas; and etching, after the etching by forming the plasma from the first gas, the target object by forming plasma from a second gas. The first gas includes a gas containing a carbon atom and a fluorine atom. The second gas includes a gas containing a carbon atom, a fluorine atom and a hydrogen atom. High-order fluorocarbon is generated by the plasma from the first gas in the etching by forming the plasma from the first gas. Low-order fluorocarbon or low-order hydrofluorocarbon is generated by the plasma from the second gas in the etching by forming the plasma from the second gas. | 2020-09-17 |
20200294774 | COLLECTING AND RECYCLING RARE GASES IN SEMICONDUCTOR PROCESSING EQUIPMENT - A process chamber, such as for semiconductor processing equipment, is connected with a recovery unit. The recovery unit includes a first storage tank for buffer gas and a second storage tank for rare gas. Both storage tanks are connected with a column in the recovery unit. The recovery unit and process chamber can operate as a closed system. The rare gas can be transported at a variable flow rate while separation in the recovery unit operates at a constant flow condition. | 2020-09-17 |
20200294775 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a gas supply configured to supply a gas into a plasma generation chamber; a first power supply configured to convert the gas supplied into the plasma generation chamber into plasma by supplying a first high-frequency power into the plasma generation chamber; a separation plate configured to separate the plasma generation chamber and a processing chamber below the plasma generation chamber, the separation plate having a plurality of through holes so as to guide active species contained in the plasma generated in the plasma generation chamber to the processing chamber; and a temperature controller having a flow path through which a fluid flows in a temperature-controlled manner, the temperature controller being configured to control a temperature of the separation plate through heat exchange with the fluid. | 2020-09-17 |
20200294776 | ION BEAM DEVICE AND CLEANING METHOD FOR GAS FIELD ION SOURCE - An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein. | 2020-09-17 |
20200294777 | PLASMA PROCESSING METHOD - An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. | 2020-09-17 |
20200294778 | SPUTTERING TARGET WITH BACKSIDE COOLING GROOVES - Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate. | 2020-09-17 |
20200294779 | COMBINED HEATING AND POWER MODULES AND DEVICES - Various disclosed embodiments include combined heating and power modules and combined heat and power devices. In an illustrative embodiment, a combined heat and power device includes a heating system including: at least one burner; at least one igniter configured to ignite the at least one burner; a fluid motivator assembly including an electrically powered prime mover; and a heat exchanger fluidly couplable to the fluid motivator assembly. At least one thermionic energy converter has a hot shell and a cold shell, the hot shell being thermally couplable to the at least one burner, the cold shell being thermally couplable to the heat exchanger. | 2020-09-17 |
20200294780 | COMBINED HEATING AND POWER MODULES AND DEVICES - Various disclosed embodiments include combined heating and power modules and combined heat and power devices. In an illustrative embodiment, a combined heat and power device includes a heating system including: at least one burner; at least one igniter configured to ignite the at least one burner; a fluid motivator assembly including an electrically powered prime mover; and a heat exchanger fluidly couplable to the fluid motivator assembly. At least one thermionic energy converter has a hot shell and a cold shell, the hot shell being thermally couplable to the at least one burner, the cold shell being thermally couplable to the heat exchanger. | 2020-09-17 |
20200294781 | MASS SPECTROMETRY ANALYSIS OF MICROORGANISMS IN SAMPLES - The invention generally relates to systems and methods for mass spectrometry analysis of microorganisms in samples. | 2020-09-17 |
20200294782 | REACTION GAS SUPPLY EQUIPMENT OF AN INDUCTIVE COUPLED PLASMA MASS SPECTROMETER COMPRISES AN AMMONIA SUPPLY END AND A HELIUM SUPPLY END AND A REACTION GAS SUPPLY EQUIPMENT - A reaction gas supply equipment of an inductive coupled plasma mass spectrometer comprises an ammonia supply end and a helium supply end and a reaction gas supply equipment, which is supplied with an ammonia supply end and a helium supply end, and the reaction gas supply equipment is provided with an ammonia mass flow meter to adjust the flow of ammonia and helium mass flow meter to adjust the flow of helium; the ammonia mass flow meter and helium mass flow meter are adjusted by the proportion of reaction gas specified by the inductive coupled plasma spectrometer, and ammonia gas is mixed with helium gas to form reaction gas, which is then provided to the inductive coupled plasma mass spectrometer; through the technical means of the prevent invention, several advantages such as the protection of detection instrument and the reduction of cost of reaction gas can be achieved. | 2020-09-17 |
20200294783 | OCTA-ELECTRODE LINEAR ION TRAP MASS ANALYZER - An octa-electrode linear ion trap mass analyzer is formed by eight cylindrical electrodes and at least two end-cap electrodes. The inside surfaces of the eight cylindrical electrodes are free-form. The material of the octa-electrode linear ion trap mass analyzer is a conductive metal material or an insulating material plated with a conductive coating. The eight cylindrical electrodes are divided into four groups of cylindrical electrodes in total, each group of the four groups of cylindrical electrodes comprises two cylindrical electrodes, and each two groups of the four groups of cylindrical electrodes are parallelly placed. At least one through hole is provided with in the center of the end-cap electrode, and the two end-cap electrodes are respectively arranged at both ends of the cylindrical electrode. | 2020-09-17 |
20200294784 | Ion Trapping Scheme with Improved Mass Range - Trapping ions in an ion trapping assembly is described. In one aspect, this is implemented by introducing ions into the ion trapping assembly, applying a first RF trapping amplitude to the ion trapping assembly so as to trap introduced ions which have m/z ratios within a first range of m/z ratios, and cooling the trapped ions. In some aspects, also performed is reducing the RF trapping amplitude from the first RF trapping amplitude to a second, lower, RF trapping amplitude so as to reduce the low mass cut-off of the ion trapping assembly and trapping, at the second, lower RF trapping amplitude, introduced ions having m/z ratios within a second range of m/z ratios. A lower mass limit of the second range of m/z ratios is below the low mass cut-off of the ion trapping assembly when the first RF trapping amplitude is applied. | 2020-09-17 |
20200294785 | SYSTEM FOR PORTABLE GAS STORAGE AND DELIVERY - A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist. | 2020-09-17 |
20200294786 | SEMICONDUCTOR DEVICE - A semiconductor device of the embodiment includes first and second conductive layer; a silicon nitride layer between the first conductive layer and the second conductive layer; a silicon oxide layer between the silicon nitride layer and the second conductive layer; a silicon oxynitride layer between the silicon oxide layer and the second conductive layer; and a third conductive layer between the first conductive layer and the second conductive layer, the third conductive layer electrically connected to the first and second conductive layer, a first tilt angle of a plane where the third conductive layer is in contact with the silicon oxynitride layer with respect to an interface between the silicon nitride layer and the silicon oxide layer is smaller than a second tilt angle of a plane where the third conductive layer is in contact with the silicon oxide layer with respect to the interface. | 2020-09-17 |
20200294787 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon. | 2020-09-17 |
20200294788 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - (a) Loading a substrate into a process chamber; (b) supplying a processing gas including H | 2020-09-17 |
20200294789 | METHODS FOR SELECTIVELY FORMING A SILICON NITRIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES - A method for selectively forming a silicon nitride film on a substrate comprising a first metallic surface and a second dielectric surface by a cyclical deposition process is disclosed. The method may comprise contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source, wherein the incubation period for the first metallic surface is less than the incubation period for the second dielectric surface. Semiconductor device structures comprising a selective silicon nitride film are also disclosed. | 2020-09-17 |
20200294790 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS - By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process chamber housing a substrate by adjusting a flow velocity of the mixed gas on the substrate to 7.8 m/s to 15.6 m/s and adjusting a partial pressure of the organic metal-containing source gas in the mixed gas to 0.167 to 0.3, a step of exhausting the process chamber, a step of supplying an oxygen-containing gas to the process chamber, and a step of exhausting the process chamber, a metal oxide film is formed on the substrate. | 2020-09-17 |
20200294791 | ELEMENT CHIP MANUFACTURING METHOD - An element chip manufacturing method including: a preparing step of preparing a substrate including a plurality of element regions and a dicing region defining the element regions, the substrate having a first surface and a second surface opposite the first surface; a laser scribing step of applying a laser beam to the dicing region from a side of the first surface, to form a groove corresponding to the dicing region and being shallower than a thickness of the substrate; a cleaning step of exposing the first surface of the substrate to a first plasma, to remove debris on the groove; and a dicing step of exposing the substrate at a bottom of the groove to a second plasma after the cleaning step, to dice the substrate into element chips including the element regions. The first plasma is generated from a process gas containing a carbon oxide gas. | 2020-09-17 |
20200294792 | Indium Nitride Material - Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase. | 2020-09-17 |
20200294793 | SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device according to one embodiment, a first gas containing a first metal element is introduced into a chamber having a substrate housed therein. Next, the first gas is discharged from the chamber using a purge gas. Subsequently, a second gas reducing the first gas is introduced into the chamber. Next, the second gas is discharged from the chamber using the purge gas. Further, a third gas different from the first gas, the second gas, and the purge gas is introduced into the chamber at least either at a time of discharging the first gas or at a time of discharging the second gas. | 2020-09-17 |
20200294794 | METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A FRONT SIDE OF A SEMICONDUCTOR WAFER AND DEVICE FOR CARRYING OUT THE METHOD - A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly. | 2020-09-17 |
20200294795 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF FORMING PATTERN FILM, AND METAL-CONTAINING ORGANIC FILM - According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask. | 2020-09-17 |
20200294796 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method is disclosed. The method includes forming a guide pattern, forming a block copolymer film that covers the guide pattern and includes first and second polymers, and forming a microphase-separation pattern including first portions of the first polymer and second portions of the second polymer which are alternately arranged by subjecting the block copolymer film to microphase separation. The method further includes measuring a position of the guide pattern, the first portions or the second portions by using a scanning probe microscope, determining whether a misalignment amount of the first portions with respect to the guide pattern is within a first range, based on the measured position of the first and the guide pattern, and removing the first portions, when the misalignment amount is within the first range. | 2020-09-17 |
20200294797 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - There is provided a substrate processing apparatus including: a processing container having a vacuum atmosphere formed therein; a stage provided within the processing container and configured to place a substrate on the stage; a film-forming gas supply part configured to supply a film-forming gas for forming an organic film on the substrate placed on the stage; and a heating part configured to heat the substrate placed on the stage in a non-contact manner so as to remove a surface portion of the organic film. | 2020-09-17 |
20200294798 | FILM FORMING METHOD AND FILM FORMING APPARATUS - There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process. | 2020-09-17 |
20200294799 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L12020-09-17 | |
20200294800 | FILM FORMING METHOD AND HEAT TREATMENT APPARATUS - A film forming method includes forming an amorphous semiconductor film on a recess, forming a first polycrystalline semiconductor film by performing heat treatment on the amorphous semiconductor film, and forming a second polycrystalline semiconductor film on the first polycrystalline semiconductor film formed by the heat treatment. | 2020-09-17 |
20200294801 | Grafting Design for Pattern Post-Treatment in Semiconductor Manufacturing - A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate. | 2020-09-17 |
20200294802 | METHODS FOR REDUCING TRANSFER PATTERN DEFECTS IN A SEMICONDUCTOR DEVICE - Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers. | 2020-09-17 |
20200294803 | FIN FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED GATES - A method of forming adjacent fin field effect transistor devices is provided. The method includes forming at least two vertical fins in a column on a substrate, depositing a gate dielectric layer on the vertical fins, and depositing a work function material layer on the gate dielectric layer. The method further includes depositing a protective liner on the work function material layer, and forming a fill layer on the protective liner. The method further includes removing a portion of the fill layer to form an opening between an adjacent pair of two vertical fins, where the opening exposes a portion of the protective liner. The method further includes depositing an etch-stop layer on the exposed surfaces of the fill layer and protective liner, forming a gauge layer in the opening to a predetermined height, and removing the exposed portion of the etch-stop layer to form an etch-stop segment. | 2020-09-17 |
20200294804 | METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes removing a top portion of a dielectric layer surrounding a metal gate to form a recess in the dielectric layer; filling the recess with a capping structure; forming a patterned hard mask over the capping structure and over the metal gate, wherein a portion of the metal gate, a portion of the capping structure, and a portion of the dielectric layer are aligned vertically with an opening of the patterned hard mask; and performing an etch process on said portions of the metal gate, the capping structure, and the dielectric layer that are aligned vertically with the opening of the patterned hard mask, wherein the capping structure has an etch resistance higher than an etch resistance of the dielectric layer during the etch process. | 2020-09-17 |
20200294805 | Tuning Threshold Voltage Through Meta Stable Plasma Treatment - A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer. | 2020-09-17 |
20200294806 | SEMICONDUCTOR STRUCTURE HAVING METAL CONTACT FEATURES AND METHOD FOR FORMING THE SAME - A semiconductor structure having metal contact features and a method for forming the same are provided. The method includes forming a dielectric layer covering an epitaxial structure over a semiconductor substrate and forming an opening in the dielectric layer to expose the epitaxial structure. The method includes forming a metal-containing layer over the dielectric layer and the epitaxial structure. The method includes heating the epitaxial structure and the metal-containing layer to transform a first portion of the metal-containing layer contacting the epitaxial structure into a metal-semiconductor compound layer. The method includes oxidizing the metal-containing layer to transform a second portion of the metal-containing layer over the metal-semiconductor compound layer into a metal oxide layer. The method includes applying a metal chloride-containing etching gas on the metal oxide layer to remove the metal oxide layer and forming a metal contact feature over the metal-semiconductor compound layer. | 2020-09-17 |
20200294807 | SELECTIVE FORMATION OF TITANIUM SILICIDE AND TITANIUM NITRIDE BY HYDROGEN GAS CONTROL - The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow. | 2020-09-17 |
20200294808 | SURFACE TREATMENT COMPOSITION, METHOD OF PRODUCING SURFACE TREATMENT COMPOSITION, METHOD OF TREATING SURFACE, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE - The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. | 2020-09-17 |
20200294809 | Ultra Narrow Trench Patterning Using Plasma Etching - A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer. | 2020-09-17 |
20200294810 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF - Semiconductor device and fabrication method are provided. A plurality of first-type fin groups and second-type fins, each between the first-type fin groups, are formed on a substrate. A first-type fin group includes first-type fins. The first-type fins and the second-type fins are arranged in a direction perpendicular to an extending direction of the first-type fins and the second-type fins. The second-type fins are removed to form first trenches between corresponding first-type fin groups. A protective layer is formed on sidewalls of the first trenches after removing the second-type fins. The protective layer covers sidewalls of the first-type fins that are perpendicular to a width direction of the first-type fins. Second trenches are formed in the substrate under the first trenches by etching the substrate at bottoms of the first trenches using the protective layer as an etch mask. | 2020-09-17 |
20200294811 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film on a substrate. The method further includes forming, on the stacked film, a mask layer formed of a tungsten compound and including impurity atoms having a concentration of 1.0×10 | 2020-09-17 |
20200294812 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step. | 2020-09-17 |
20200294813 | USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES - Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C | 2020-09-17 |
20200294814 | Patterning Methods - Some embodiments include a method of patterning a target material. An assembly is provided which has a masking material over the target material. First lines are formed over the assembly. The first lines extend along a first direction and are laterally spaced from one another by first spaces. Second lines are formed over the first lines. The second lines extend along a second direction which crosses the first direction, and are laterally spaced from one another by second spaces. The second lines cross the first lines at first crossing regions. The second spaces cross the first spaces at second crossing regions. A pattern includes the first and second crossing regions. The pattern is transferred into the masking material to form holes in the masking material in locations directly under the first and second crossing regions. The holes are extended into the target material. | 2020-09-17 |
20200294815 | SEMICONDUCTOR DEVICE WITH TIERED PILLAR AND MANUFACTURING METHOD THEREOF - A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers. | 2020-09-17 |
20200294816 | METHOD TO PROTECT DIE DURING METAL-EMBEDDED CHIP ASSEMBLY (MECA) PROCESS - A process for assembling microelectronic or semiconductor chips, comprising: providing a semiconductor chip having an active face with a connection pad; coating the active face of the semiconductor chip with a conformal dielectric material layer, such that the connection pad is completely coated by the conformal dielectric material layer; temporarily adhering the active face of the semiconductor chip to a carrier wafer; temporarily adhering the carrier wafer to a wafer-with-a-through-cavity such that the semiconductor chip extends into the through-cavity; assembling the semiconductor chip to the wafer-with-the-through-cavity by filling the through-cavity with a heat spreader material; releasing the assembled semiconductor chip and wafer-with-the-through-cavity from the carrier wafer; removing the conformal dielectric material layer from at least a portion of the connection pad; and forming an electrical connection to said at least a portion of the connection pad. | 2020-09-17 |
20200294817 | 3DIC Package Comprising Perforated Foil Sheet - A structure includes a thermal interface material, and a Perforated Foil Sheet (PFS) including through-openings therein, with a first portion of the PFS embedded in the thermal interface material. An upper layer of the thermal interface material is overlying the PFS, and a lower layer of thermal interface material is underlying the PFS. The thermal interface material fills through-openings in the PFS. | 2020-09-17 |
20200294818 | METHOD FOR SUBSTRATE THINNING - A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled. | 2020-09-17 |
20200294819 | Systems and Methods for Substrate Cooling - An apparatus is provided for cooling a substrate. The apparatus includes a chamber configured to receive the substrate. The chamber comprises multiple sidewall sections surrounding the substrate and oriented in a vertical direction substantially parallel to a vertical side surface of the substrate. The apparatus also includes at least one gas inlet port on a first side wall section of the chamber. The gas inlet port is configured to introduce a cooling gas into the chamber in a lateral direction parallel to top and bottom surfaces of the substrate. The apparatus further includes at least one gas outlet port on a second side wall section of the chamber located substantially opposite of the first side wall section of the chamber with the substrate disposed therebetween. The gas outlet port is configured to conduct at least a portion of the cooling gas out of the chamber along the lateral direction. | 2020-09-17 |
20200294820 | CONCENTRATION CONTROL APPARATUS, SOURCE CONSUMPTION QUANTITY ESTIMATION METHOD, AND PROGRAM RECORDING MEDIUM ON WHICH A PROGRAM FOR A CONCENTRATION CONTROL APPARATUS IS RECORDED - In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas. | 2020-09-17 |
20200294821 | POST CMP CLEANING APPARATUS AND POST CMP CLEANING METHODS - A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid. | 2020-09-17 |
20200294822 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed. | 2020-09-17 |
20200294823 | SUBSTRATE PROCESSING APPARATUS, MIXING METHOD, AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device. | 2020-09-17 |
20200294824 | BONDING SYSTEM AND BONDING METHOD - A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface. | 2020-09-17 |
20200294825 | SUBSTRATE HEAT TREATMENT APPARATUS - A substrate heat treatment apparatus for heat treating a substrate, comprising a bake plate, a plurality of support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The plurality of support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate. | 2020-09-17 |
20200294826 | Thermal Processing System With Temperature Non-Uniformity Control - A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state. | 2020-09-17 |
20200294827 | NEEDLE DISPENSER FOR DISPENSING AND COLLECTING AN UNDERFILL ENCAPSULANT - Embodiments described herein provide a needle dispenser for use in dispensing and collecting an underfill encapsulant under a device on a substrate. In one scenario, the needle dispenser comprises: a reservoir; and a needle coupled to the reservoir. A tip of the needle is comprised of a first material and a body of the needle is comprised of a second material. The first material is more compliant than the second material. An outer surface of the needle is formed from a hydrophobic material and a core of the needle comprises a hydrophilic material. The needle also comprises channels extending along the needle. A solvent flows through at least one of the channels to soak the core. Additionally, openings formed in the needle's outer surface expose the core. The openings enable dispensing or absorbing of the underfill material. | 2020-09-17 |
20200294828 | WAFER CHUCK APPARATUS, METHOD FOR MEASURING WAFER BOW VALUE AND SEMICONDUCTOR PROCESS FLOW - A method for measuring wafer bow value comprising the following steps is provided. Place a wafer on a wafer chuck apparatus. A gas inlet process is performed on gas inlet passageways of a passageway pair of the wafer chuck apparatus. A gas outlet process is performed on gas outlet passageways of a passageway pair of the wafer chuck apparatus. A leak rate of each channel pair is measured by the control unit when the wafer is placed on the wafer chuck apparatus and during the gas inlet process and gas outlet process are performed. A wafer bow value of the wafer on the wafer chuck apparatus is estimated by the leak rate of the passageway pair. A wafer chuck apparatus is provided. A semiconductor process flow is provided. | 2020-09-17 |
20200294829 | METROLOGY METHOD AND SYSTEM - A control system for use in measuring one or more parameters of a patterned structure. The control system is configured as a computer system and comprises: an input utility configured to receive input data comprising raw measured TEM image data, TEM | 2020-09-17 |
20200294830 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - The inventive concept provides an apparatus and method for processing a substrate. The apparatus includes an index module and a processing module that is disposed adjacent to the index module and that processes the substrate. The index module includes one or more load ports, on each of which a carrier having the substrate received therein is placed, a side storage that stores the substrate subjected to a process in the processing module and removes fumes on the substrate, and a transfer frame including an index robot that transfers the substrate between the carrier placed on the load port, the side storage, and the processing module. The side storage includes a housing having an interior space, a partitioning unit that partitions the interior space into a plurality of receiving spaces independent of one another, and an exhaust unit that independently and separately evacuates the plurality of receiving spaces. | 2020-09-17 |