39th week of 2010 patent applcation highlights part 63 |
Patent application number | Title | Published |
20100248350 | Micromethod and Device For the Rapid Detection, Enumeration and Identification of Microorganisms - The present invention provides a device such as a medical device for the rapid detection, enumeration and identification of microorganisms. It is based on the production and accumulation of absorbent or fluorescent molecules during reactions between artificial substrates and enzymes in micro-channels of a sampling-detecting unit of the device. Enzymes of cells, or enzymes attached to cell bodies through antibody-enzyme conjugates, produce easily detectable concentrations of colored or fluorescent molecules in very small volumes, much faster than what is produced in conventional large volume devices. Microorganisms contained in the micro-channels appear as colored or fluorescent dots when viewed using a light or a fluorescent microscope. | 2010-09-30 |
20100248351 | CHIP FOR OPTICAL ANALYSIS - The present invention relates to a chip for optical analysis. In particular, the present invention relates to an optical sensor handling a liquid sample, which is a chip for analysis that can be used for selectively measuring a biologically-relevant substance or a chemical substance such as an environmental pollutant or a health affecting substance in a liquid to be measured. The chip for optical analysis of the present invention is characterized in that (1) an adsorption region (filter region) is provided between a sample introduction section and the observation section in a passage of the chip for analysis, (2) a bypass passage is provided in the passage (main passage) of the chip for analysis, and a time lag is generated between samples passed through the main passage and passed through a bypass passage, and (3) a measurement region and a reference region are provided in the observation section of the chip for analysis. In the present invention, the aspects (1) to (3) can be achieved individually or two or more thereof can be combined. | 2010-09-30 |
20100248352 | SENSOR FOR BIOLOGICAL DETECTION - Provided is a sensor for biological detection. The sensor for biological detection includes: a sensing unit including a light generator, an optical coupler, and an optical detector, the optical coupler dividing light incident from the light generator to project divided lights into a bio chip and a reference unit, respectively, and coupling the lights reflected from the respective bio chip and reference unit as one output light, and the optical detector detecting the output light, and the bio chip is independently separated from the sensing unit to be disposed on paths of lights divided by the optical coupler. The sensing unit has a composition of the Michelson interferometer. | 2010-09-30 |
20100248353 | In-Situ System for Aerobic Heat Treatment of Biodegradable Organic Waste - The proposed invention is an in-situ system for aerobic heat treatment of biodegradable organic waste, comprising a bioreactor made up of a dish-shaped decomposition chamber, said decomposition chamber being closed and having: a lid at the top, via which an air extraction device is connected, said device enabling fresh air to enter the decomposition chamber, and a preparation for a device for supplying the biodegradable organic waste; said decomposition chamber is also connected to a system of pipes which convey a hot fluid from the supply tank into a plurality of minitubes located longitudinally on the inner perimeter of the decomposition chamber, and into a shaft that forms part of the mixing mechanism; and, by means of a centrifugal pump, they convey the same fluid, but “cold”, from inside the minitubes and shaft to a solar collector, to heat it, before delivering it to a storage tank for subsequent recirculation. | 2010-09-30 |
20100248354 | MEMBRANE VESICLE FISSION SYSTEM - A membrane vesicle fission system is disclosed. The membrane vesicle fission system includes: a membrane vesicle having a lipid bi-layer membrane including a cationic lipid; and a unit which applies, to the membrane vesicle, an anionic material having a hydrophobic group. | 2010-09-30 |
20100248355 | METHODS FOR GENERATING HIGH TITER HELPER-FREE PREPARATIONS OF RELEASED RECOMBINANT AAV VECTORS - This invention provides methods and compositions for producing high titer, substantially purified preparations of recombinant adeno-associated virus (AAV) that can be used as vectors for gene delivery. At the onset of vector production, AAV producer cells of this invention typically comprise one or more AAV packaging genes, an AAV vector comprising a heterologous (i.e. non-AAV) transgene of interest, and a helper virus such as an adenovirus. The AAV vector preparations produced are generally replication incompetent but are capable of mediating delivery of a transgene of interest (such as a therapeutic gene) to any of a wide variety of tissues and cells. The AAV vector preparations produced according to this invention are also substantially free of helper virus as well as helper viral and cellular proteins and other contaminants. The invention described herein provides methods of producing rAAV particles by culturing producer cells under conditions, such as temperature and pH, that promote release of virus. Also provided is a quantitative, high-throughput assay useful in the assessment of viral infectivity and replication, as well as in the screening of agent that affect viral infectivity and/or replication. | 2010-09-30 |
20100248356 | hTERT GENE EXPRESSION REGULATORY GENE - Disclosed is a novel substance capable of regulating the expression of a telomerase reverse transcriptase gene in a cell of a mammal. A gene capable of regulating the expression of hTERT, comprising a nucleotide sequence depicted in SEQ ID No: 1 or 2. The expression of a telomerase reverse transcriptase gene can be inhibited by inhibiting the expression of the gene. By utilizing this mechanism, the expression of a telomerase reverse transcriptase gene can be regulated. | 2010-09-30 |
20100248357 | Nematode Fatty Acid Desaturase-Like Sequences - Nucleic acid molecules from nematodes encoding fatty acid desaturase polypeptides are described. Fatty acid desaturase-like polypeptide sequences are also provided, as are vectors, host cells, and recombinant methods for production of fatty acid desaturase-like nucleotides and polypeptides. Also described are screening methods for identifying inhibitors and/or activators of fatty acid desaturase-like polypeptides, as well as methods for antibody production. | 2010-09-30 |
20100248358 | CELL SEPARATING APPARATUS AND CELL SEPARATING METHOD - A cancer cell separating apparatus includes: a flow channel including an antibody fixation area having antibodies which bind specifically to cancer cells fixed thereon, wherein the cancer cells and non-cancer cells are separated using a difference in velocity of movement between the cancer cells and the non-cancer cells in cell slurry introduced into the flow channel. | 2010-09-30 |
20100248359 | Anti-Glypican 3 Antibody - An antibody capable of binding to a specific region of glypican 3, as well as a humanized antibody created based on that antibody are disclosed. The anti-GPC3 antibody of the invention has a higher ADCC activity and CDC activity compared with those of a conventional antibody. The antibody of the present invention is useful as a cell growth inhibitor, an anticancer agent and an agent for diagnosis of cancers. | 2010-09-30 |
20100248360 | HUMAN T2R51 TASTE RECEPTOR NUCLEIC ACID SEQUENCES AND POLYPEPTIDES - Newly identified mammalian taste-cell-specific G Protein-Coupled Receptors and the genes encoding said receptors are described. Specifically, T2R taste G Protein-Coupled Receptors that are believed to be involved in bitter taste sensation, and the genes encoding the same, are described, along with methods for isolating such genes and for isolating and expressing such receptors. Methods for representing taste perception of a particular tastant in a mammal are also described, as are methods for generating a novel molecules or combinations of molecules that elicit a predetermined taste perception in a mammal, and methods for simulating one or more tastes. | 2010-09-30 |
20100248361 | PLATELET PRODUCTION METHODS - The present invention provides platelet production methods. The method comprises the steps of providing a cellular material and culturing the cellular material, wherein platelets are produced. The culturing may be performed on 2D or 3D cell support structure or in suspension culture. In some embodiments, all or a part of the 2D or 3D culturing may be performed in a bioreactor. In some embodiments, the method may further comprise a step of isolating a subset of cells from the starting cellular material, wherein the isolated subset of cells is then cultured, wherein platelets are produced. In yet other embodiments, the method comprises the steps of providing a cellular material, isolating a subset of cells, seeding the subset of cells into a 3D scaffold, culturing the subset of cells in a 3D scaffold, seeding the cultured subset of cells into a bioreactor, culturing the subset of cells in a bioreactor, and harvesting the cells from the bioreactor, wherein platelets are produced. | 2010-09-30 |
20100248362 | Apparatus and Methods for Sorting Particles - A multi-channel apparatus for classifying particles according to one or more particle characteristics. The apparatus comprises a plurality of flow cytometry units, each of which is operable to classify particles in a mixture of particles by interrogating a stream of fluid containing the particles with a beam of electromagnetic radiation. The flow cytometry units share an integrated platform comprising at least one of the following: (1) a common supply of particles; (2) a common housing; (3) a common processor for controlling operation of the units; (4) a common processor for receiving and processing information from the units; and (5) a common fluid delivery system. The integrated platform can include a common source of electromagnetic radiation. A method of the invention comprises using a plurality of flow cytometry units sharing the integrated platform to perform a flow kilometric operation, such as analyzing or sorting particles. | 2010-09-30 |
20100248363 | MATRICES AND MEDIA FOR STORAGE AND STABILIZATION OF BIOMOLECULES - The present invention provides compositions useful for biomolecule storage comprising a water soluble inorganic compound, a stabilizer, or a combination thereof. The present invention also provides methods of using the compositions of the invention to store biomolecules in the dry state and in solution, as well as sample carriers and kits comprising compositions of the invention. | 2010-09-30 |
20100248364 | SENSE OLOGONUCLEOTIDE CAPABLE OF CONTROLLING THE EXPRESSION OF iNOS AND COMPOSITION COMPRISING THE SAME - The invention relates to sense oligonucleotide having a sequence complementary to a single-stranded RNA (antisense transcript) having a sequence complementary to mRNA of iNOS gene in order to control expression of iNOS (inducible nitric oxide synthase). The sense oligonucleotide of the present invention can control expression of iNOS and is useful for biological defense and treatment and prevention of diseases related to excessive production of NO, such as cancerogenesis, inflammatory disease, endotoxin shock by bacterial infection and the like. | 2010-09-30 |
20100248365 | GANGLIOSIDE BIOSYNTHESIS MODULATORS - Provided herein are ganglioside synthesis inhibitors, including modulators of ganglioside glycosylation. | 2010-09-30 |
20100248366 | Synthetic Surfaces for Differentiating Stem Cells into Cardiomyocytes - Synthetic surfaces capable of supporting culture of eukaryotic cells including stem cells and undifferentiated human embryonic stem cells in a chemically defined medium include a swellable (meth)acrylate layer and a polypeptide conjugated to the swellable (meth)acrylate layer. The swellable (meth)acrylate layer may be formed by polymerizing monomers in a composition that includes a carboxyl group-containing (meth)acrylate monomer, a cross-linking (di- or higher-functional) (meth)acrylate monomer, and a hydrophilic monomer capable of polymerizing with the carboxyl group-containing (meth)acrylate monomer and the cross-linking (meth)acrylate monomer. The swellable (meth)acrylate layer has an equilibrium water content in water of between about 5% and about 70%. The conjugated peptide may include an RGD amino acid sequence. | 2010-09-30 |
20100248367 | Method for isolation of inner cell mass and method of preparation of embryonic stem cell lines using inner cell mass isolated by the same - A method for isolation of an inner cell mass and a method for preparation of embryonic stem cell lines using the inner cell mass isolated by the same. A blastocyst being free from a zona pellucida removed therefrom is placed on a feeder cell, and a micro cover glass is put on the blastocyst to apply pressure caused by a weight of the micro cover glass, to the blastocyst for a desired time, so that the inner cell mass may be obtained with considerably improved yield compared to conventional methods, and therefore, an embryonic stem cell line may be efficiently established and proliferated. | 2010-09-30 |
20100248368 | BIOMATERIAL - A process for the preparation of a composite biomaterial comprising: providing a first substantially solid component comprising one or more of collagen, a glycosaminoglycan, albumin, hyaluronan, chitosan, and synthetic polypeptides comprising a portion of the polypeptide sequence of collagen, and optionally an inorganic material, said component having at least a surface portion that is porous; providing a fluid composition comprising one or more of collagen, a glycosaminoglycan, albumin, hyaluronan, chitosan, and synthetic polypeptides comprising a portion of the polypeptide sequence of collagen, and a liquid carrier, and optionally an inorganic material; contacting said fluid composition with said porous surface portion of said first component; cooling said fluid composition to a temperature at which the liquid carrier transforms into a plurality of solid crystals or particles; removing at least some of the plurality of solid crystals or particles by sublimation and/or evaporation. | 2010-09-30 |
20100248369 | RENAL-FUNCTION-AMELIORATING AGENT - A renal function-ameliorating agent and a serum creatinine-lowering agent, each comprising as an active ingredient a culture of a bacterium belonging to the genus | 2010-09-30 |
20100248370 | METHOD AND APPARATUS FOR TISSUE TRANSFER - A handheld tool is disclosed which may be used to transfer a plurality of plant tissue explants from a first container to a second container. The handheld tool may include a disposable tip member which couples the plurality of plant tissue explants through use of negative pressure. An automated system which transfers a plurality of plant tissue explants from a first container to a second container is also disclosed. The automated system may include a first presentment system which moves the first container to a region, a second presentment system which moves the second container to the region, and a robot system that transfers the plurality of plant tissue explants from the first container to the second container. | 2010-09-30 |
20100248371 | METHODS AND COMPOSITIONS FOR MODULATING RAD51 AND HOMOLOGOUS RECOMBINATION - The present invention concerns methods and compositions involving inhibitors and enhancers of RAD51, a protein involved in homologous recombination. In some embodiments, the present invention concerns methods for stimulating homologous recombination, which has a number of significant research and clinical applications. In certain other embodiments, there are methods for protecting cells using a compound that enhances RAD51 activity. Such enhancers may also be employed to prevent or reduce damage to cells that may be caused by DNA damaging agents. In other embodiments, there are methods for sensitizing cells to the effects of DNA damaging agents, which can have particular applications for cancer patients. In some embodiments of the invention, the RAD51 enhancer or inhibitor is a small molecule that directly affects RAD51 activity, such as its ability to promote filament formation. | 2010-09-30 |
20100248372 | Composition and Method for Modulating Plant Transformation - A plant culture medium composition for modulating plant transformation events, comprising a plant culture medium and an effective amount of at least one compound having a chloride component intermixed thereinto. In one embodiment, the at least one chloride-containing compound is selected from the group comprising: NaCl, MgCl | 2010-09-30 |
20100248373 | METHOD FOR INTRODUCING FOREIGN SUBSTANCE INTO CELL HAVING CELL WALL - Disclosed is a method for introducing a foreign substance ( | 2010-09-30 |
20100248374 | SAMPLE TESTING APPARATUS AND SAMPLE TESTING METHOD - The present invention is to present a sample testing apparatus comprising: a transport unit for transporting a sample container through a first position and a second position; a testing unit for performing a test on the sample in the sample container transported to the first position; a determination result obtainer for obtaining one of a first determination result indicating that a second test is required and a second determination result indicating that the second test is not required; and a transport controller for controlling the transport unit so as to transport the sample container back to the first position, if the first determination result has been obtained, wherein the sample container is not transported beyond the second position from the first position side before any one of the first and the second determination result has been obtained. | 2010-09-30 |
20100248375 | METHOD FOR PREDICTING RESPONSIVENESS TO A PHARMACEUTICAL THERAPY FOR OBESITY - Methods for using TRL V6 as a biomarker for the modulation of triglyceride and/or lipoprotein metabolism in a mammal induced by a weight loss pharmaceutical agent. The biomarker may be used for determining if an individual patient will likely respond favorably to a given weight loss pharmaceutical agent. | 2010-09-30 |
20100248376 | IN-VITRO METHOD FOR TESTING BIOEQUIVALENCE OF IRON-SUCROSE FORMULATION - The present disclosure relates to an in vitro method for measuring the T | 2010-09-30 |
20100248377 | DETECTION OF CONTRAST MEDIUM-INDUCED NEPHROTOXICITY - The present invention relates to a method for diagnosing contrast medium-induced nephrotoxicty in a subject based on comparing the amount of urotensin II and/or adiponectin in a sample of the subject obtained after administration of the contrast medium to the amount of urotensin II and/or adiponectin in a sample of the subject prior to administration of the contrast medium. Further encompassed by the present invention are a kit and a device for carrying out the method of the present invention. | 2010-09-30 |
20100248378 | METHOD AND MARKER FOR DIAGNOSING DIABETES MELLITUS - A process for the diagnosis of diabetes mellitus comprising the step of determining the presence or absence or amplitude of at least three polypeptide markers in a urine sample, the polypeptide markers being selected from the markers characterized by the values for the molecular masses and migration times according to Table 1. | 2010-09-30 |
20100248379 | OPTICAL SENSOR WITH LAYERED PLASMON STRUCTURE FOR ENHANCED DETECTION OF CHEMICAL GROUPS BY SERS - An optical sensor and method for use with a visible-light laser excitation beam and a Raman spectroscopy detector, for detecting the presence chemical groups in an analyte applied to the sensor are disclosed. The sensor includes a substrate, a plasmon resonance mirror formed on a sensor surface of the substrate, a plasmon resonance particle layer disposed over the mirror, and an optically transparent dielectric layer about 2-40 nm thick separating the mirror and particle layer. The particle layer is composed of a periodic array of plasmon resonance particles having (i) a coating effective to binding analyte molecules, (ii) substantially uniform particle sizes and shapes in a selected size range between 50-200 nm (ii) a regular periodic particle-to-particle spacing less than the wavelength of the laser excitation beam. The device is capable of detecting analyte with an amplification factor of up to 10 | 2010-09-30 |
20100248380 | METHOD AND ASSAYS FOR QUANTITATION OF ACETAMIDE IN A COMPOSITION - Disclosed herein are the methods and assays for quantitative determination of acetamide in a composition of a sample. | 2010-09-30 |
20100248381 | Methods for Detecting Urushiol-Bearing Plants - The present invention provides methods for detecting urushiol-bearing plants such as poison ivy, poison oak, and poison sumac. Accordingly, one aspect of the invention is a method of detecting a urushiol-bearing plant, the method comprising: dispensing a urushiol marking composition on a surface of the urushiol-bearing plant; then detecting a visual change on the urushiol-bearing plant caused by the reaction of the urushiol marking composition with the urushiol borne by the urushiol-bearing plant. | 2010-09-30 |
20100248382 | WAFER PROCESS CHAMBER LEAK DETECTOR - The present disclosure includes a method for monitoring leaks in a wafer process chamber. The method includes providing a wafer process chamber coupled to a gas supply by a gas supply line, wherein an indicator member is coupled to the gas supply line between the gas supply and the wafer process chamber, and a final valve is located on the gas supply line between the gas supply and the indicator member. A gas is supplied from the gas supply to the wafer process chamber through the gas supply line. A light is emitted and directed through the indicator member. The light that was directed through the indicator member is then reflected using a reflecting member. The reflected light is then received and compared to the light emitted in order to determine that the color of the indicator member has changed and a leak has been detected in the gas supply line. | 2010-09-30 |
20100248383 | COMBINED OPTICAL AND ELECTRICAL SENSOR CARTRIDGES - A sensor cartridge has a cartridge substrate comprising an optical substrate for optical detection of a target moiety in a sample fluid based on frustrated totalinternal reflection and at least one electric structure. This way, optical read-out and electrical functions, e.g. read-out, are combined in a single substrate, in a simple and cheap manner. Also a method of fabricating such sensor cartridge is provided. | 2010-09-30 |
20100248384 | OPTICAL REAGENT FORMAT FOR SMALL SAMPLE VOLUMES - An optical waveguiding optical format enables consistent optical analysis of small sample volumes with minimal variation in light path length among optical formats. The optical format is comprised of an input guide, an output guide, and a sample cavity adapted to allow light to pass through a sample on its way from the input guide to the output guide. A lid removed from the light pathway within the format may be provided with a reagent for assisting fluid analysis. | 2010-09-30 |
20100248385 | MULTI-ACCEPTOR MOLECULAR PROBES AND APPLICATIONS THEREOF - An oligonucleotide-based molecular probe includes at least one pin loop, the pin loop including a loop sequence complementary to a target sequence. A first stem sequence is attached to one end of the pin loop, the first stem having at least one fluorescent label attached thereto. A second stem sequence is attached to the other end of the pin loop. The second stem has a plurality of quencher molecules attached thereto. | 2010-09-30 |
20100248386 | SEMICONDUCTOR PHOSPHOR NANOPARTICLE ASSEMBLY, PRODUCING METHOD THEREOF AND SINGLE MOLECULE OBSERVATION METHOD BY USE THEREOF - The present invention provide a semiconductor phosphor nanoparticle assembly which exhibits no variation in emission wavelength and emission intensity for every particle and is capable of achieving stable evaluation when performing a single molecule observation by using an assembly of semiconductor phosphor nanoparticles as a fluorescence labeling agent, a production method thereof and a single molecule observation method by use thereof. The production method of the semiconductor phosphor nanoparticle assembly, which is performed by a liquid phase process or a gas phase process, comprises the steps of forming nuclear particles and allowing the nuclear particles to grow or fuse, wherein a concentration by number of the formed nuclear particles is not more than a specific concentration. | 2010-09-30 |
20100248387 | Method for Measuring Luminescence at a Luminescence Detection Workstation - A luminescence detecting apparatus and method for analyzing luminescent samples is disclosed. Luminescent samples are placed in a plurality of sample wells in a tray, and the tray is placed in a visible-light impervious chamber containing a charge coupled device camera. The samples may be injected in the wells, and the samples may be injected with buffers and reagents, by an injector. In the chamber, light from the luminescent samples pass through a collimator, a Fresnel field lens, a filter, and a camera lens, whereupon a focused image is created by the optics on the charge-coupled device (CCD) camera. The use of a Fresnel field lens, in combination with a collimator and filter, reduces crosstalk between samples below the level attainable by the prior art. Preferred embodiments of the luminescence detecting apparatus and method disclosed include central processing control of all operations, multiple wavelength filter wheel, and robot handling of samples and reagents. Preferred embodiments of processing software integrated with the invention include elements for mechanical alignment, outlier shaving, edge detection and masking, manipulation of multiple integration times to expand the dynamic range, crosstalk correction, dark subtraction interpolation and drift correction, multi-component analysis applications specifically tailored for luminescence, and uniformity correction. | 2010-09-30 |
20100248388 | Solid Phase Extraction and Ionization Device - A plate for laser desorption ionization mass spectrometry comprising an electrically conductive substrate ( | 2010-09-30 |
20100248389 | ELECTROCHEMICAL DEPOSITION OF POLYMERS ON METAL SUBSTRATES - Described herein are methods for electrodepositing a variety of different polymers on metal substrates. The polymers are strongly adhered to the substrates. The substrates produced herein can be used in a number of different applications such as, for example, medical devices and biosensors. For example, the biosensors can be composed of one or more electrodes, where the electrodes have the same or different polymers electrochemically deposited on them. Finally, the methods described herein permit the evaluation of the electrodeposition process as well as monitor the ability of biomolecules to bind to the electrodeposited polymers. | 2010-09-30 |
20100248390 | COMPOSITIONS AND METHODS FOR IDENTIFYING LIGANDS OF ODORANT RECEPTORS - The present invention relates to compositions and methods for identifying odorant-odorant receptor interactions. In particular, the present invention relates to in silico methods for identifying odorant receptor-odorant interactions based on chemical and physical properties of odorant receptors and odorants. | 2010-09-30 |
20100248391 | BIOSENSOR DEVICE AND METHOD OF DETECTING BIOLOGICAL PARTICLES - A biosensor device ( | 2010-09-30 |
20100248392 | Method of Immunoassaying Specimen Using Aggregation Reaction of Microparticles and Assay Kit - A method of assaying a sample with the use of the aggregation reaction of immunological microparticles and an assay kit. The assay is conducted by using microparticles wherein the same or an analog of the analyte and a substance that specifically binds to a substance that can specifically bind to the analyte are both bound to an insoluble carrier. Thus, it becomes possible to conveniently carry out the assay even in the case where the analyte has only a small number of specific binding sites, without especially adding a competitive substance carrying hapten bonded thereto to the reaction system so as to induce simultaneous competition of the target substance and the competitive substance. | 2010-09-30 |
20100248393 | METHOD FOR DETERMINATION OF ANTIGEN AND ANTIBODY AGAINST THE ANTIGEN, AND DETERMINATION REAGENT FOR USE IN THE METHOD - For determining an antigen or an antibody against the antigen in a sample, a determination reagent is used which comprises an antibody capable of causing an antigen-antibody reaction with the antigen contained in the sample and an antigen capable of causing an antigen-antibody reaction with both of the antibody contained in the sample and the antibody contained in the reagent. Either one of the antigen and the antibody in the reagent is supported on a microparticle. The sample is mixed with the reagent. The antigen or the antibody in the sample can be determined based on the degree of increase or decrease in agglutination caused by the antigen-antibody reaction. It becomes possible to determine both of an antigen and an antibody against the antigen in a sample accurately using one and the same reagent. | 2010-09-30 |
20100248394 | CONTROLLED FLOW ASSAY DEVICE AND METHOD - A device for handling liquid samples, comprising a flow path with at least one zone for receiving the sample, and a transport or incubation zone, said zones connected by or comprising an area having projections substantially vertical to its surface, said device provided with a sink with a capacity of receiving said liquid sample, said sink comprising an area having projections substantially vertical to its surface, and said sink being adapted to respond to an external influence regulating its capacity to receive said liquid sample. | 2010-09-30 |
20100248395 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A ferroelectric capacitor provided with a ferroelectric film ( | 2010-09-30 |
20100248396 | HEAT TREATMENT APPARATUS AND CONTROL METHOD THEREFOR - A heat treatment apparatus includes a processing chamber having a gate valve at a sidewall and a cover at a ceiling via a sealing member; a gate valve heating unit provided at the gate valve; a processing chamber heating unit provided at a sidewall of the processing chamber; and a temperature controller that controls a set temperature for the sidewall of the processing chamber adjacent to the gate valve to be lower than a set temperature for an opposite sidewall of the processing chamber from the gate valve by controlling the processing chamber heating unit. The two set temperatures are set to be higher than a sublimation temperature of a reaction by-product, or higher than a condensation temperature of the gas, and the two set temperatures are also set to be lower than a temperature at which an amount of a gas permeating the sealing member increases. | 2010-09-30 |
20100248397 | High temperature susceptor having improved processing uniformity - A susceptor configured to be coupled to a material processing system is described. The susceptor comprises a substrate support comprising a central portion and an edge portion, wherein the central portion has a support surface configured to receive and support a substrate, and the edge portion extends beyond a peripheral edge of the substrate. The susceptor further comprises an edge reflector coupled to the edge portion of the substrate support and configured to partially or fully shield the peripheral edge of the substrate from radiative exchange with an outer region of the material processing system. | 2010-09-30 |
20100248398 | E-CHUCK FOR AUTOMATED CLAMPED FORCE ADJUSTMENT AND CALIBRATION - The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a wafer; measuring the wafer for wafer data after the first process; securing the wafer on an E-chuck in a processing chamber; collecting sensor data from a sensor embedded in the E-chuck; adjusting clamping forces to the E-chuck based on the wafer data and the sensor data; and thereafter performing a second process to the wafer secured on the E-chuck in the processing chamber. | 2010-09-30 |
20100248399 | METHOD FOR MANUFACTURING HYBRID IMAGE SENSORS - A method for wafer-to-wafer bonding of a sensor readout circuitry separately fabricated with a silicon substrate to a photodiode device made of non-silicon materials grown from a separate substrate. In preferred embodiments the non-silicon materials are epitaxially grown on a silicon wafer. The bonding technique of preferred embodiments of the present invention utilizes lithographically pre-fabricated metallic interconnects to connect each of a number of pixel circuits on a readout circuit wafer to each of a corresponding number of pixel photodiodes on a photodiode wafer. The metallic interconnects are extremely small (with widths of about 2 to 4 microns) compared to prior art bump bonds with the solder balls of diameter typically larger than 20 microns. The present invention also provides alignment techniques to assure proper alignment of the interconnects during the bonding step. | 2010-09-30 |
20100248400 | Methods of fabricating a light-emitting device - Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the plurality of light-emitting units using a printing method, and cutting the substrate to separate the plurality of light-emitting units into unit by unit. The phosphor layer is adjustably deposited according to the measured light characteristics of the plurality of light-emitting units. | 2010-09-30 |
20100248401 | Kind of Method of Constituting Light Source using Multiple Light-emitting units - A method for forming a light source by plurality of light-emitting units, includes: step (A), determining the number of the light-emitting units based on following factors: the factors include a maximum supply voltage of a power supply circuit and a working voltage of each of the light-emitting units; step (B), determining a set power of each of the light-emitting units based on a set power of the light source and the number of the light-emitting units determined in the step (A); step (C), fabricating or selecting each of the light-emitting units based on the working voltage of each of the light emitting units and the set power of each of the light-emitting units determined in the step (B); step D), forming the light source by connecting each of the light-emitting units obtained in the step (C) in series according to the number of the light-emitting units determined in the step (A). For the light source formed as the above method, the high efficient power supply with the maximum output voltage, to the light source load, can be realized and the same power supply circuit can supply power to the light source with different set power with maximum supply efficiency. | 2010-09-30 |
20100248402 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DELAMINATION METHOD, AND TRANSFERRING METHOD - A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward. | 2010-09-30 |
20100248403 | Light-Emitting Device and Method for Manufacturing the Same - In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction. | 2010-09-30 |
20100248404 | Method for producing group III nitride-based compound semiconductor device - A method for producing a Group III nitride-based compound semiconductor device includes, before bonding a support substrate to an epitaxial layer formed on an epitaxial growth substrate, forming trenches in such a manner as to extend from the top surface of a stacked structure including the epitaxial layer to at least the interface between the epitaxial growth substrate and the bottom surface of the epitaxial layer. The trenches divide the epitaxial layer into extended device areas which encompass respective product device structures, and stress relaxation areas. A plurality of laser irradiations are performed for laser lift off such that, after each laser irradiation, the expanded device areas and the stress relaxation areas are formed by a laser-irradiated area and a laser-unirradiated area, and a strip-shaped laser-unirradiated stress relaxation area is formed at a boundary between the laser-irradiated area and the laser-unirradiated area. | 2010-09-30 |
20100248405 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 2010-09-30 |
20100248406 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film. | 2010-09-30 |
20100248407 | Method for producing group III nitride-based compound semiconductor device - Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350° C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350° C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained. | 2010-09-30 |
20100248408 | METHOD OF TEXTURING SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL - Methods of texturing and manufacturing a solar cell are provided. The method of texturing the solar includes texturing a surface of a substrate of the solar cell using a wet etchant, and the wet etchant includes a surfactant. | 2010-09-30 |
20100248409 | METHOD OF MANUFACTURING SOLAR CELL AND PLASMA TREATMENT APPARATUS - This method of manufacturing a solar cell includes a step of forming a photoelectric conversion layer on a substrate with a plasma treatment apparatus including a first electrode provided in a treatment chamber, a second electrode and a gas supply source supplying gas into the treatment chamber. A recess portion having a bottom portion in the form of a curved surface is provided on another surface of the first electrode, while a plurality of through-holes are provided on the bottom portion of the recess portion. | 2010-09-30 |
20100248410 | Method of fabricating semiconductor device - There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) forming a light receiving element region on the semiconductor substrate for forming the plural light receiving elements, with the active region acting as a reference for positioning; c) implanting an impurity into the light receiving element region; d) repeating the process b) and the process c) a number of times that equals a number of diffusion layers in the light receiving element region; e) after implanting the impurity, performing a drive-in process to carry out drive in of the semiconductor substrate; and f) the process e), forming an amplifying element forming process by implanting an impurity in the active region. | 2010-09-30 |
20100248411 | Demounting of Inverted Metamorphic Multijunction Solar Cells - A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; attaching a surrogate second substrate over the third solar subcell and removing the first substrate; and etching a first trough around the periphery of the solar cell to the surrogate second substrate so as to form a mesa structure on the surrogate second substrate and facilitate the removal of the solar cell from the surrogate second substrate. | 2010-09-30 |
20100248412 | ACTIVE PIXEL SENSOR HAVING TWO WAFERS - A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer. | 2010-09-30 |
20100248413 | Monolithic Integration of Photovoltaic Cells - A method of forming a photovoltaic device on a substrate, especially an opaque substrate. The method includes forming a photovoltaic material on a substrate and removing the substrate. The method may include patterning the photovoltaic material to form a plurality of photovoltaic devices and configuring the devices in series to achieve monolithic integration. The method may include forming additional layers on the substrate, such as one or more of a protective material, a transparent conductor, a back conductor, an adhesive layer, and a laminate support layer. When the substrate is opaque, the method provides the option of ordering the layers so that a transparent conductor is formed before the back reflector of a photovoltaic stack. This ordering of layers facilitates monolithic integration and the ability to remove the substrate allows the earlier-formed transparent conductor to serve as the point of incidence for receiving the light that excites the photovoltaic material. The method enables high speed manufacturing of monolithically integrated photovoltaic devices on opaque substrates. | 2010-09-30 |
20100248414 | METHOD OF WAFER BONDING - Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side, a back side, and a first edge portion, forming a material layer over a portion of the front side of the device substrate, trimming the first edge portion, removing the material layer, bonding the front side of the device substrate to a carrier substrate, thinning the device substrate from the back side, and trimming a second edge portion of the thinned device substrate. | 2010-09-30 |
20100248415 | SEMITRANSPARENT FLEXIBLE THIN FILM SOLAR CELLS AND MODULES - A method of manufacturing partially light transparent thin film solar cells generally includes forming a solar cell structure stack and forming multiple openings through the solar cell structure stack. The solar cell structure stack includes a flexible foil substrate, a contact layer formed over the flexible foil substrate, a Group IBIIIAVIA absorber layer formed over the contact layer and a transparent conductive layer formed over the Group IBIIIAVIA absorber layer. A terminal structure including at least one busbar and a plurality of conductive finger patterns is deposited onto a top surface of the transparent conductive layer forming a semi-transparent solar cell. | 2010-09-30 |
20100248416 | DEPOSITION OF HIGH VAPOR PRESSURE MATERIALS - The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices. | 2010-09-30 |
20100248417 | METHOD FOR PRODUCING CHALCOPYRITE-TYPE SOLAR CELL - The present invention relates to a method for producing a chalcopyrite-type solar cell. The chalcopyrite-type solar cell has a light absorbing layer formed by selenizing a Cu—In—Ga alloy layer. The alloy layer is formed on a first electrode layer by sputtering using only a Cu—In—Ga alloy target (CIG target). | 2010-09-30 |
20100248418 | PHOTOELECTRIC CONVERTER, AND TRANSPARENT CONDUCTIVE SUBSTRATE FOR THE SAME - A highly durable photoelectric converter with excellent photoelectric conversion efficiency is prevented from resistance loss or lowering of photoelectric conversion efficiency and free from problems of corrosion and reverse electron transfer reaction. Specifically disclosed is a photoelectric converter ( | 2010-09-30 |
20100248419 | SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) - Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. | 2010-09-30 |
20100248420 | METHOD FOR FORMING AN ABSORBER LAYER OF A THIN FILM SOLAR CELL - In a method for forming a light absorber layer ( | 2010-09-30 |
20100248421 | Method of forming organic thin film and method of manufacturing semiconductor device using the same - Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substrate coated with an organic semiconductor solution using a method of generating a shearing stress to the portion of the lower substrate coated with the organic semiconductor solution. A guide structure may be formed adjacent to the organic semiconductor solution. | 2010-09-30 |
20100248422 | METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE - A method of manufacturing a nonvolatile memory device according to an embodiment of the present invention comprises: forming a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide, on an interlayer insulating film having a silicon layer, which is patterned in a predetermined shape and connected to a first wire, with the surface thereof exposed, performing heat treatment to form a silicide layer on the surface of the silicon layer, oxidizing the silicide layer to form a variable resistive layer on an upper part of the silicon layer, and forming a second wire coupled to the variable resistive layer. | 2010-09-30 |
20100248423 | DELIVERY DEVICE COMPRISING GAS DIFFUSER FOR THIN FILM DEPOSITION - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed. | 2010-09-30 |
20100248424 | Self-Aligned Chip Stacking - A first semiconductor chip and a second semiconductor chip are provided with a matching pair of hydrophilic top surfaces each including a matched set of conductive contact structures. In one embodiment, the first semiconductor chip, the second semiconductor chip, or both is provided with a mesa of which the periphery coincides with the shape of a hydrophilic top surface. In another embodiment, the first semiconductor chip, the second semiconductor chip, or both is provided with a peripheral hydrophobic top surface that laterally surrounds a hydrophilic top surface. Prior to vertical stacking, a polar liquid coats the hydrophilic top surface of a first semiconductor chip. When a second semiconductor chip is placed on the polar liquid, the matching shapes of two hydrophilic surfaces are self-aligned by moving the second semiconductor chip as needed. | 2010-09-30 |
20100248425 | Chip-size-package semiconductor chip and manufacturing method - A method of manufacturing semiconductor chips includes preparing a semiconductor substrate having on its front side a plurality of chip forming areas; sticking a support to the front surface of the substrate via an adhesive sheet; forming through holes extending from the back surface of the substrate; forming a groove along each of boundaries between the chip forming areas, the groove extending from the back surface of the substrate through the adhesive sheet to the support to expose cross-sections of the adhesive sheet; forming an insulating film over the back surface so as to cover side walls of the through holes and the cross-sections of the adhesive sheet; and dicing the substrate along the grooves with the insulating film remaining. | 2010-09-30 |
20100248426 | METHOD OF MAKING CHIP-ON-LEAD PACKAGE - A process for assembling a Chip-On-Lead packaged semiconductor device includes the steps of: mounting and sawing a wafer to provide individual semiconductor dies; performing a first molding operation on a lead frame; depositing epoxy on the lead frame via a screen printing process; attaching one of the singulated dies on the lead frame with the epoxy, where the die attach is done at room temperature; and curing the epoxy in an oven. Throughput improvements may be ascribed to not including a hot die attach process. An optional plasma cleaning step may be performed, which greatly improves wire bonding quality and a second molding quality. In addition, since a first molding operation is performed before the formation of epoxy to avoid the problem of the epoxy hanging in the air, the delamination risk between the epoxy and the die is avoided. | 2010-09-30 |
20100248427 | METHOD OF HANDLING A THIN WAFER - A method of handling a thin wafer includes forming a support structure at the edge of a thinned wafer that is encapsulated by a protection layer. The support structure can be an adhesive layer enclosing the protection layer, a dielectric-filled trench embedded in the thinned wafer and surrounding the protection layer, or a housing affixing the edge of the thinned wafer. | 2010-09-30 |
20100248428 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A wiring circuit layer | 2010-09-30 |
20100248429 | METHOD FOR MANUFACTURING SEMICONDUCTOR MODULES - In a method for making a semiconductor module, a bump electrode and a recess are formed by etching a copper sheet. An insulating resin layer is formed, in the recess, up to a position lower than the height of the bump electrode, and then a semiconductor device and the copper sheet, including a wiring layer formed integrally with the bump electrode, are press-bonded together. The wiring layer is warped to protrude toward the semiconductor device, which assures the electrical connection between the bump electrodes and device electrodes. | 2010-09-30 |
20100248430 | High Frequency Flip Chip Package Process of Polymer Substrate and Structure thereof - In a high frequency flip chip package process of a polymer substrate and a structure thereof, the structure is a one-layer structure packaged by a high frequency flip chip package process to overcome the shortcomings of a conventional two-layer structure packaged by the high frequency flip chip package process. The conventional structure not only incurs additional insertion loss and return loss in its high frequency characteristic, but also brings out a reliability issue. Thus, the manufacturing process of a ceramic substrate in the conventional structure still has the disadvantages of a poor yield rate and a high cost. | 2010-09-30 |
20100248431 | METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE - A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film. | 2010-09-30 |
20100248432 | METHODS OF FORMING A HYPER-ABRUPT P-N JUNCTION AND DESIGN STRUCTURES FOR AN INTEGRATED CIRCUIT - Methods of forming hyper-abrupt p-n junctions and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substrate by implanting a portion of a device layer to have one conductivity type and then implanting a portion of this doped region to have an opposite conductivity type. The counterdoping defines the hyper-abrupt p-n junction. A gate structure carried on a top surface of the device layer operates as a hard mask during the ion implantations to assist in defining a lateral boundary for the hyper-abrupt p-n junction. | 2010-09-30 |
20100248433 | Method for Manufacturing Thin Film Transistor - It is an object to provide a method for manufacturing a thin film transistor, in which the number of masks to be used is small. A thin film transistor is manufactured as follows: a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; a resist mask having a recessed portion is formed thereover with the use of a multi-tone mask; a thin-film stack body is formed with first etching; a gate electrode layer is formed with second etching in which an etched first conductive film is side-etched; and then a source electrode and a drain electrode and the like are formed. A crystalline semiconductor film is used for the semiconductor film. | 2010-09-30 |
20100248434 | Method for Fabricating Semiconductor Device - A method for fabricating a semiconductor device includes forming an etch target layer over a substrate including a cell region and a peripheral region, forming a first mask pattern having a first portion and a second portion over the etch target layer in the cell region and forming a second mask pattern having a first portion and a second portion over the etch target layer in the peripheral region, forming a photoresist pattern over the cell region, trimming the first portion of the second mask pattern, removing the photoresist pattern and the second portion of the first mask pattern and the second portion of the second mask pattern, and etching the etch target layer to form a pattern in the cell region and a pattern in the peripheral region. | 2010-09-30 |
20100248435 | METHOD OF SELECTIVE NITRIDATION - Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device. | 2010-09-30 |
20100248436 | Methods of forming insulation layer patterns and methods of manufacturing semiconductor devices including insulation layer patterns - In a method of forming an insulation layer pattern, an insulation layer is formed on a substrate. An organic layer and a hard mask layer are successively formed on the insulation layer. A preliminary hard mask pattern having first openings is formed by patterning the hard mask layer. A hard mask pattern having the first openings and second openings is formed by patterning the preliminary hard mask pattern. Width control spacers are formed on sidewalls of the first and the second openings. An etching mask pattern is formed by etching the organic layer using the hard mask pattern as an etching mask. The insulation layer pattern having third openings is formed by etching the insulation layer using the etching mask pattern as an etching mask. | 2010-09-30 |
20100248437 | Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures - A recessed gate structure in a semiconductor device includes a gate electrode partially buried in a substrate, a blocking member formed in the buried portion of the gate electrode, and a gate insulation layer formed between the gate electrode and the substrate. The blocking member may effectively prevent a void or a seam in the buried portion of the gate electrode from contacting the gate insulation layer adjacent to a channel region in subsequent manufacturing processes. Thus, the semiconductor device may have a regular threshold voltage and a leakage current passing through the void or the seam may efficiently decrease. | 2010-09-30 |
20100248438 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In a semiconductor substrate in a first section, a channel region having an impurity concentration peak in an interior of the semiconductor substrate is formed, and in the semiconductor substrate in a second section and a third section, channel regions having an impurity concentration peak at a position close to a surface of the substrate are formed. Then, extension regions are formed in the first section, the second section and the third section. After that, the substrate is thermally treated to eliminate defects produced in the extension regions. Then, using gate electrodes and side-wall spacers as a mask, source/drain regions are formed in the first section, the second section and the third section. | 2010-09-30 |
20100248439 | Method of fabricating non-volatile memory device having vertical structure - A method of fabricating a non-volatile memory device according to an example embodiment may include etching a plurality of sacrificial films and insulation films to form a plurality of first openings that expose a plurality of first portions of a semiconductor substrate. A plurality of channel layers may be formed in the plurality of first openings so as to coat the plurality of first portions of the semiconductor substrate and side surfaces of the plurality of first openings. A plurality of insulation pillars may be formed on the plurality of channel layers so as to fill the plurality of first openings. The plurality of sacrificial films and insulation films may be further etched to form a plurality of second openings that expose a plurality of second portions of the semiconductor substrate. A plurality of side openings may be formed by removing the plurality of sacrificial films. A plurality of gate dielectric films may be formed on surfaces of the plurality of side openings. A plurality of gate electrodes may be formed on the plurality of gate dielectric films so as to fill the plurality of side openings. | 2010-09-30 |
20100248440 | NITRIDE REMOVAL WHILE PROTECTING SEMICONDUCTOR SURFACES FOR FORMING SHALLOW JUNCTIONS - A method of removing silicon nitride over a semiconductor surface for forming shallow junctions. Sidewall spacers are formed along sidewalls of a gate stack that together define lightly doped drain (LDD) regions or source/drain (S/D) regions. At least one of the sidewall spacers, LDD regions and S/D regions include an exposed silicon nitride layer. The LDD or S/D regions include a protective dielectric layer formed directly on the semiconductor surface. Ion implanting implants the LDD regions or S/D regions using the sidewall spacers as implant masks. The exposed silicon nitride layer is selectively removed, wherein the protective dielectric layer when the sidewall spacers include the exposed silicon nitride layer, or a replacement protective dielectric layer formed directly on the semiconductor surface after ion implanting when the LDD or S/D regions include the exposed silicon nitride layer, protects the LDD or S/D regions from dopant loss due to etching during selectively removing. | 2010-09-30 |
20100248441 | MULTI-BIT HIGH-DENSITY MEMORY DEVICE AND ARCHITECTURE AND METHOD OF FABRICATING MULTI-BIT HIGH-DENSITY MEMORY DEVICES - A structure, memory devices using the structure, and methods of fabricating the structure. The structure includes: an array of nano-fins, each nano-fin comprising an elongated block of semiconductor material extending axially along a first direction, the nano-fins arranged in groups of at least two nano-fins each, wherein ends of nano-fins of each adjacent group of nano-fins are staggered with respect to each other on both a first and a second side of the array; wherein nano-fins of each group of nano-fins are electrically connected to a common contact that is specific to each group of nano-fins such that the common contacts comprise a first common contact on the first side of the array and a second common contact on the second side of the array; and wherein each group of nano-fins has at least two gates that electrically control the conductance of nano-fins of the each group of nano-fins. | 2010-09-30 |
20100248442 | METHODS OF FORMING A PHASE CHANGE MEMORY DEVICE - Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell. | 2010-09-30 |
20100248443 | Method of integrating an air gap structure with a substrate - A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer. | 2010-09-30 |
20100248444 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured. | 2010-09-30 |
20100248445 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - It is an object to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. The method for manufacturing a semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide layer; adding ions to the silicon substrate to form an embrittlement region in the silicon substrate; bonding the silicon substrate and a base substrate with insulating layers interposed between the silicon substrate and the base substrate; heating the silicon substrate and separating the silicon substrate at the embrittlement region to form a stacked layer of the silicon carbide layer and a silicon layer over the base substrate with the insulating layers interposed between the base substrate and the stacked layer; and removing the silicon layer to expose a surface of the silicon carbide layer. | 2010-09-30 |
20100248446 | METHOD AND APPARATUS OF HOLDING A DEVICE - Provided is an apparatus and a method of holding a device. The apparatus includes a wafer chuck having first and second holes that extend therethrough, and a pressure control structure that can independently and selectively vary a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure. The method includes providing a wafer chuck having first and second holes that extend therethrough, and independently and selectively varying a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure. | 2010-09-30 |
20100248447 | METHOD FOR PRODUCING A BONDED WAFER - In a method for producing a bonded wafer by bonding a wafer for active layer and a wafer for support layer and thinning the wafer for active layer according to the invention, oxygen ions are implanted into the wafer for active layer at a state of holding a temperature of the wafer for active layer below 200° C. under a dose of 5×10 | 2010-09-30 |
20100248448 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor devices by cleaving a semiconductor wafer along a crystal orientation of the semiconductor wafer includes forming a semiconductor layer on the semiconductor wafer, forming an insulating film on the semiconductor layer such that the insulating film includes an insulating film thinned region extending parallel to the crystal orientation and that is thinner than other regions of the insulating film, forming an electrode on the insulating film and that crosses the insulating film thinned region, forming a cut in the insulating film thinned region, the cut serving as a starting point for cleaving, and cleaving the semiconductor wafer such that cleaving starts at the cut and propagates along the insulating film thinned region. | 2010-09-30 |
20100248449 | Metal-Assisted Chemical Etching of Substrates - Disclosed herein are various embodiments related to metal-assisted chemical etching of substrates on the micron, sub-micron and nano scales. In one embodiment, among others, a method for metal-assisted chemical etching includes providing a substrate; depositing a non-spherical metal catalyst on a surface of the substrate; etching the substrate by exposing the non-spherical metal catalyst and the substrate to an etchant solution including a composition of a fluoride etchant and an oxidizing agent; and removing the etched substrate from the etchant solution. | 2010-09-30 |