40th week of 2014 patent applcation highlights part 18 |
Patent application number | Title | Published |
20140291627 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND DONOR SUBSTRATE AND DONOR SUBSTRATE SET USED TO MANUFACTURE THE ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device, a method of manufacturing the same, and a donor substrate and a donor substrate set used to manufacture the organic light-emitting display device. According to an aspect of the present invention, there is provided an organic light-emitting display device comprising a substrate which comprises a green region and a red region, a plurality of first electrodes which are formed on the green region and the red region of the substrate, respectively, a plurality of light-emitting layers which are formed on the first electrodes and comprise a green light-emitting layer formed on the green region and a red light-emitting layer formed on the red region, and a second electrode which is formed on the light-emitting layers, wherein the green light-emitting layer comprises a first light-emitting layer which comprises a first host material and a first dopant material and a first buffer layer which is formed on the first light-emitting layer and comprises the first host material, and the red light-emitting layer comprises a second light-emitting layer which comprises a second host material and a second dopant material and a second buffer layer which is formed on the second light-emitting layer and comprises the first host material. | 2014-10-02 |
20140291628 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE COMPRISING THE SAME - A condensed-cyclic compound is represented by Formula 1, and an organic light-emitting diode includes the condensed-cyclic compound. The organic light-emitting diode includes a first electrode, a second electrode facing the first electrode, and an organic layer. The organic layer includes an emission layer and the condensed-cyclic compound. The condensed-cyclic compound can be included in the emission layer as a host, and the emission layer may further include a dopant. | 2014-10-02 |
20140291629 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a first substrate including a pixel area and a non-pixel area; a pixel array formed on the pixel area of the first substrate; a protective layer formed over the pixel array, and having a trench that exposes at least a portion of the non-pixel area; a second substrate disposed above the first substrate; a sealing material disposed between the second substrate and the protective layer at the outside of the trench; and a getter disposed between the second substrate and the first substrate exposed by the trench. Moisture and/or oxygen penetrated through the sealing material and the protective layer, which are disposed at a side of the organic light emitting display device, are absorbed into the getter, thereby improving the lifespan of the organic light emitting display device. | 2014-10-02 |
20140291630 | ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING SAME - Provided is an organic light-emitting diode (OLED) display including a flexible substrate; a driving circuit unit on the flexible substrate and having a thin film transistor (TFT); an OLED on the flexible substrate and coupled to the driving circuit unit; a sealing layer on the flexible substrate at the OLED and the driving circuit unit; and a first protective film on the flexible substrate, wherein the first protective film includes a photoresist material. | 2014-10-02 |
20140291631 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting diode device includes a first electrode and a second electrode facing each other, a charge-generating layer interposed between the first electrode and the second electrode, a first light emitting unit that emits blue and is interposed between the first electrode and the charge-generating layer, and a second light emitting unit that emits white by combining the blue and is interposed between the second electrode and the charge-generating layer. The first light emitting unit includes a blue emission layer, a first charge transport layer disposed on one side of the blue emission layer and including an alkali metal complex compound and a first charge transport material, and a second charge transport layer disposed on one side of the first charge transport layer and including the alkali metal complex compound and a second charge transport material that has different charge mobility from the first charge transport material. | 2014-10-02 |
20140291632 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention includes: forming a first electrode on a substrate; forming an insulation layer on the first electrode; etching the insulation layer to expose the first electrode so as to form a pixel defining layer having the same height as the first electrode; forming an organic layer including one or more emission layers on the first electrode of a sub-pixel region defined by the pixel defining layer by applying a laser-induced thermal imaging (LITI) method; and forming a second electrode on the organic layer. | 2014-10-02 |
20140291633 | FLEXIBLE SUBSTRATE AND FLEXIBLE DISPLAY DEVICE INCLUDING THE SAME - A flexible substrate includes a flexible base substrate and a first passivation layer formed on one surface of the base substrate and made of a material having a coefficient of thermal expansion lower than that of the base substrate. | 2014-10-02 |
20140291634 | INDOLE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE COMPRISING THE SAME - An indole-based compound represented by Formula 1 below, and an organic light-emitting diode including the indole-based compound are provided. | 2014-10-02 |
20140291635 | THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME - A thin-film transistor, a method for manufacturing the same and a display device including the same are provided. The thin-film transistor may include a substrate, and an active layer formed on the substrate. The active layer may be made from an oxide semiconductor. A gate electrode may be formed above the active layer or below the active layer. A conductive layer may come in contact with the active layer, may be overlapped with at least a part of the gate electrode, and may be insulated from the gate electrode. A source electrode and a drain electrode may be electrically connected to the active layer. The conductive layer can reduce a channel length of the thin-film transistor and increase a capacitance between the source electrode and the gate electrode or between the drain electrode and the gate electrode. | 2014-10-02 |
20140291636 | Organic Light Emitting Diode Display Device and Method for Manufacturing the Same - An organic light emitting diode display device is disclosed which includes: scan, data and power lines crossing one another and arranged to define a pixel region; a switching thin film transistor disposed at an intersection of the scan and data lines; an organic light emitting diode disposed in the pixel region; a driving thin film transistor disposed between the power line and the organic light emitting diode; and a storage capacitor disposed adjacently to the organic light emitting diode and configured to charge a data signal which is applied from the data line. The storage capacitor includes a plurality of sub storage capacitors in which a plurality of storage electrodes are stacked alternately with one another. | 2014-10-02 |
20140291637 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus includes a substrate, an encapsulation member facing the substrate, a plurality of pixels between the substrate and the encapsulation member, each pixel including a light emission area and a non-emission area, a first electrode overlapping at least the light emission area, an intermediate layer on the first electrode and including an organic emission layer, a second electrode on the intermediate layer, and a reflective member on a bottom surface of the encapsulation member, the bottom surface of the encapsulation member facing the substrate, and the reflective member including an opening corresponding to the light emission area, and a reflective surface around the opening and corresponding to the non-emission area. | 2014-10-02 |
20140291638 | HOST MATERIALS FOR OLED APPLICATION - The present disclosure provides novel compounds containing dibenzo[fg,op]tetracene and larger all-benzenoid moiety that can be used as hosts for phosphorescent emitters providing low-voltage, high-efficiency and high-stability devices. | 2014-10-02 |
20140291639 | SEMICONDUCTOR DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film. | 2014-10-02 |
20140291640 | LIGHT-EMITTING DEVICE - A light-emitting device in which electrical characteristics of a transistor in a pixel can be monitored without degrading display quality is provided. The light-emitting device includes a plurality of pixels each comprising a pixel circuit. A pixel circuit included in a first pixel is electrically connected to a light-emitting element included in a second pixel through a first switch. A pixel circuit included in the second pixel is electrically connected to the light-emitting element included in the second pixel through a second switch and to a light-emitting element included in a third pixel through a third switch. The pixel circuits are connected to a correction circuit through switches. | 2014-10-02 |
20140291641 | ORGANIC EL DISPLAY AND ELECTRONIC APPARATUS - An organic EL display includes: a first insulating layer on a lower side as well as a second insulating layer on an upper side, the first insulating layer and the second insulating layer being provided to a display region and a peripheral region; a first separation groove provided in the first insulating layer between the display region and the peripheral region; a first conductive layer provided on the first insulating layer in the peripheral region, with a side face and a bottom of the first separation groove in between; a covering section in which at least a part of an end face of the second insulating layer is covered by the organic layer or the second electrode; and a sealing section provided on an outer edge side of the covering section, and formed by laminating the first conductive layer and the second electrode. | 2014-10-02 |
20140291642 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Provided is a light-emitting element having a light-emitting layer which contains at least a host material and a plurality of guest materials, where the host material has a lower T1 level than that of at least one of the plurality of guest materials. The emission of the one of the plurality of guest materials exhibits a multicomponent decay curve, and the lifetime thereof is less than or equal to 15 μsec, preferably less than or equal to 10 μsec, more preferably less than or equal to 5 μsec, where the lifetime is defined as a time for the emission to decrease in intensity to 1/100 of its initial intensity. | 2014-10-02 |
20140291643 | Organic Compound, Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - A novel organic compound that forms an exciplex emitting light with high efficiency is provided. An organic compound with a triarylamine skeleton in which the three aryl groups of the triarylamine skeleton are a p-biphenyl group, a fluoren-2-yl group, and a phenyl group to which a dibenzofuranyl group or a dibenzothiophenyl group is bonded. By the use of the organic compound and an organic compound with an electron-transport property, an exciplex that emits light with extremely high efficiency can be formed. | 2014-10-02 |
20140291644 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns. | 2014-10-02 |
20140291645 | Light-Emitting Element, Compound, Organic Compound, Display Module, Lighting Module, Light-Emitting Device, Display Device, Lighting Device, and Electronic Device - A light-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a benzofuropyrimidine skeleton is provided. Also provided is a light-emitting element which includes the compound with the benzofuropyrimidine skeleton between a pair of electrodes. | 2014-10-02 |
20140291646 | PYRENE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A pyrene-based compound and an organic light-emitting diode including the same, the pyrene-based compound being represented by Formula 1, below: | 2014-10-02 |
20140291647 | Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - A light-emitting element which includes a plurality of light-emitting layers between a pair of electrodes and has low driving voltage and high emission efficiency is provided. A light-emitting element including first to third light-emitting layers between a cathode and an anode is provided. The first light-emitting layer includes a first phosphorescent material and a first electron-transport material; the second light-emitting layer includes a second phosphorescent material and a second electron-transport material; the third light-emitting layer includes a fluorescent material and a third electron-transport material; the first to third light-emitting elements are provided in contact with an electron-transport layer positioned on a cathode side; and a triplet excitation energy level of a material included in the electron-transport layer is lower than triplet excitation energy levels of the first electron-transport material and the second electron-transport material. | 2014-10-02 |
20140291648 | Light-Emitting Device - Provided is a light-emitting device with a high aperture ratio. The light-emitting device includes a first substrate; a first insulating film over the first substrate; a first partition over the first insulating film; a second insulating film which covers the first insulating film and the first partition and which has a concave surface; a first electrode which is over the second insulating film and which has an edge portion at a position overlapping with the first partition; a second partition which is over the first partition and which overlaps with the edge portion of the first electrode; a layer containing a light-emitting organic compound over the first electrode and the second partition; a second electrode over the layer containing a light-emitting organic compound; and a second substrate which is over the second electrode and which overlaps with the first substrate. | 2014-10-02 |
20140291649 | OLED Display Panel and Manufacturing Method Thereof - An OLED display panel is provided which can control the problem of shedding even in high definition panels. Metal wiring | 2014-10-02 |
20140291650 | ORGANIC DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing an organic device includes the steps of applying a photoresist onto at least an active first region arranged on a substrate of the organic device, and removing the photoresist from the substrate in a second region adjacent to the active first region. Additionally, the method includes the steps of applying a passivation layer onto the first and second regions and removing the photoresist and the passivation layer in the active first region. | 2014-10-02 |
20140291651 | LIGHT EMITTING POLYMERS AND DEVICES - A polymer comprising units α, β, γ and δ wherein: unit α is present at 30 mole % to 60 mole % and is an optionally substituted arylene; unit β is present at 1 mole % to 30 mole % and is a unit comprising an optionally substituted fluorene; unit γ is present at 1 mole % to 40 mole % and comprises aryl substituted nitrogen, or an optionally substituted triazine; unit δ is present at 0.5 mole % to 15 mole % and comprises an iridium complex; and optionally up to 20 mole % of other units if the total of α, β, γ and δ is less than 100 mole %. | 2014-10-02 |
20140291652 | ORGANIC ELECTROLUMINESCENT ELEMENT, COMPOUND FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ILLUMINATION DEVICE USING SAID ELEMENT - An organic electroluminescent element using a compound represented by the following general formula (I) emits dark blue light and has small changes in the chromaticity and in the driving voltage even after driving for a long period of time: | 2014-10-02 |
20140291653 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ANTHRACENE DERIVATIVE - An organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer comprising at least one layer comprising a light emitting layer and disposed between the cathode and the anode, wherein at least one layer in the organic thin film layer comprises an anthracene derivative having a specific structure singly or as a component of a mixture, and an anthracene derivative having a specific asymmetric structure and providing an organic electroluminescence device exhibiting a great efficiency of light emission and having a long life, are provided. | 2014-10-02 |
20140291654 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound: | 2014-10-02 |
20140291655 | RESIN COMPOSITION FOR SEALING ORGANIC ELECTROLUMINESCENT DEVICE; METHOD OF PRODUCING THE SAME; AND ADHESIVE FILM, GAS-BARRIER FILM, ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT PANEL USING THE RESIN COMPOSITION - A resin composition for sealing an organic electroluminescent device, containing:
| 2014-10-02 |
20140291656 | FLEXIBLE HERMETIC THIN FILM WITH LIGHT EXTRACTION LAYER - A protected organic light emitting diode includes an organic light emitting diode structure formed on a substrate, a hermetic barrier layer formed over at least part of the organic light emitting diode structure, and a light extraction layer. The barrier layer may include a glass material such as a tin fluorophosphate glass, a tungsten-doped tin fluorophosphate glass, a chalcogenide glass, a tellurite glass, a borate glass or a phosphate glass. The light extraction layer, which may be formed over the barrier layer, includes a high refractive index matrix material and at least one of scattering particles dispersed throughout the matrix material and a roughened surface. | 2014-10-02 |
20140291657 | ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE - A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor. | 2014-10-02 |
20140291658 | OPTOELECTRONIC COMPONENT - An optoelectronic component having an outer surface facing the environment of the optoelectronic component and which is formed by a hydrophobic layer applied at least partly on a surface of the optoelectronic component. | 2014-10-02 |
20140291659 | DIOXAANTHANTHRENE COMPOUND, LAMINATED STRUCTURE AND FORMATION METHOD THEREOF, AND ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a dioxaanthanthrene compound represented by, for example, the following structural formula (1). | 2014-10-02 |
20140291660 | Organic Electroluminescent Element, Material for Organic Electroluminescent Element and Light Emitting Device, Display Device, and Illumination Device, Each Employing Organic Electroluminescent Element - This application relates in part to an organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and an organic layer(s) including a light emitting layer, in which the organic layer(s) contains a compound represented by the following formula (1), in which R | 2014-10-02 |
20140291661 | ORGANIC ELECTROLUMINESCENCE DISPLAY PANEL AND ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS - An organic electroluminescence (EL) display panel includes an anode electrode formed above a bank and formed opposite to a plurality of cathode electrodes, and a charge functional layer commonly formed for each of the organic light-emitting layers across a plurality of aperture areas formed in the bank. A distance from the center of the display region to the end of the anode electrode is shorter than a distance from the center of the display region to the end of the charge functional layer. | 2014-10-02 |
20140291662 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, AND OPTOELECTRONIC COMPONENT - A method for producing an optoelectronic component may include forming a first electrode on a substrate, forming an organic functional layer structure on the first electrode; forming a second electrode on the organic functional layer structure, forming at least one contact for making contact with the first and/or second electrode, forming an encapsulation layer above the layer structure and the contact, removing the encapsulation layer above the contact with the aid of an anisotropic etching method, and cooling the substrate during the anisotropic etching method. | 2014-10-02 |
20140291663 | HIGH STABILITY SPINTRONIC MEMORY - An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less table memory having a MTJ with only a single oxide layer. Other embodiments are described herein. | 2014-10-02 |
20140291664 | SOLUTION COMPOSITION FOR FORMING OXIDE SEMICONDUCTOR, AND OXIDE SEMICONDUCTOR AND ELECTRONIC DEVICE INCLUDING THE SAME - A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof. | 2014-10-02 |
20140291665 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes: a gate electrode disposed on a substrate, an insulating layer disposed on the gate electrode, an oxide semiconductor disposed on the gate insulating layer, source electrode overlapping a portion of the oxide semiconductor, a drain electrode overlapping another portion of the oxide semiconductor; and a buffer layer disposed between the oxide semiconductor and the source electrode and between the oxide semiconductor and the drain electrode. The buffer layer comprises tin as a doping material. A weight percent of the doping material is greater than approximately 0% and less than or equal to approximately 20%. | 2014-10-02 |
20140291666 | FLIP-CHIP SOLID STATE LIGHT DISPLAY - An exemplary flip-chip solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors; the solid state lighting elements and the thin film transistors are located on the substrate, and the solid state lighting elements each are adjacent to one respective thin film transistor. The solid state lighting elements each are a light emitting diode, and are mounted on the substrate by a way of flip-chip. The thin film transistors each electrically connect with a corresponding solid state element by a source electrode or a drain electrode of each of the thin film transistors. | 2014-10-02 |
20140291667 | DISPLAY DEVICE AND ELECTRONIC DEVICE - A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer. | 2014-10-02 |
20140291668 | SEMICONDUCTOR DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - Provided is a semiconductor device that includes a transistor. The transistor includes: a gate electrode; an oxide semiconductor film facing the gate electrode and including a first overlapping region that is overlapped with the gate electrode; a low-resistance region provided in the oxide semiconductor film; and a first separation region provided between the low-resistance region and the first overlapping region. | 2014-10-02 |
20140291669 | Thin-Film Transistor, Method for Manufacturing the Same and Display Device Comprising the Same - A thin-film transistor includes a substrate, a first gate electrode formed on the substrate, a first active layer that is formed on the substrate and includes a first oxide semiconductor layer and a first barrier layer, a second active layer that is formed on the first active layer and includes a second oxide semiconductor layer and an intermediate barrier layer, a gate insulating layer that is formed on the second active layer, a second gate electrode that is formed on the gate insulating layer and is electrically connected to the first gate electrode, an interlayer insulating film formed on the second gate electrode, the first active layer and the second active layer, and a source electrode and a drain electrode electrically connected to the first active layer and the second active layer. | 2014-10-02 |
20140291670 | IMAGE PICKUP DEVICE AND IMAGE PICKUP DISPLAY SYSTEM - An image pickup device that includes: a pixel section including a plurality of pixels each configured to generate a signal charge based on radiation; a first field-effect transistor provided in the pixel section; and a second field-effect transistor provided in a peripheral circuit section of the pixel section. The first transistor has a threshold voltage and the second transistor has a threshold voltage that are different from each other. | 2014-10-02 |
20140291671 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween. | 2014-10-02 |
20140291672 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The stability of steps of processing a wiring formed using copper or the like is increased. The concentration of impurities in a semiconductor film is reduced. Electrical characteristics of a semiconductor device are improved. A semiconductor device includes a semiconductor film, a pair of first protective films in contact with the semiconductor film, a pair of conductive films containing copper or the like in contact with the pair of first protective films, a pair of second protective films in contact with the pair of conductive films on the side opposite the pair of first protective films, a gate insulating film in contact with the semiconductor film, and a gate electrode overlapping with the semiconductor film with the gate insulating film therebetween. In a cross section, side surfaces of the pair of second protective films are located on the outer side of side surfaces of the pair of conductive films. | 2014-10-02 |
20140291673 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device with stable electrical characteristics and a method for manufacturing the semiconductor device are provided. A separation layer is formed between a source electrode and a drain electrode. The separation layer is formed using a material having a high insulating property. The separation layer between the source electrode and the drain electrode can reduce a difference in level of each of the source electrode and the drain electrode, which can improve coverage with a layer formed over the source electrode and the drain electrode. The separation layer between the source electrode and the drain electrode can prevent an unintended electrical short circuit of the source electrode and the drain electrode. The separation layer can be formed by introducing oxygen to a conductive layer. | 2014-10-02 |
20140291674 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode. | 2014-10-02 |
20140291675 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer. | 2014-10-02 |
20140291676 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a substrate having an insulating surface; a light-transmitting first electrode provided over the substrate; a light-transmitting second electrode provided over the substrate; a light-transmitting semiconductor layer provided so as to be electrically connected to the first electrode and the second electrode; a first wiring electrically connected to the first electrode; an insulating layer provided so as to cover at least the semiconductor layer; a light-transmitting third electrode provided over the insulating layer in a region overlapping with the semiconductor layer; and a second wiring electrically connected to the third electrode. | 2014-10-02 |
20140291677 | INTEGRATED MULTI-SENSOR MODULE - A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed. Such a miniature integrated multi-sensor module that features low power consumption can be used in medical monitoring and mobile computing, including smart phone applications. | 2014-10-02 |
20140291678 | SEMICONDUCTOR SENSOR RELIABILITY OPERATION - Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted. Based on the output, one or more functional blocks are modified by a control sensor component to reduce semiconductor system degredation in real-time. | 2014-10-02 |
20140291679 | SEMICONDUCTOR DEVICE - A semiconductor device disclosed in the present specification comprises: a semiconductor chip, a package that incorporates the semiconductor chip, and a plurality of lower-surface pads disposed on a lower surface of the package, a plurality of upper-surface pads disposed on an upper surface of the package, wherein the plurality of upper-surface pads include a plurality of monitor pads each of which is connected to each of all the lower-surface pads. | 2014-10-02 |
20140291680 | SILICON MEMBER AND METHOD OF PRODUCING THE SAME - A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member | 2014-10-02 |
20140291681 | PHASE NOISE REDUCTION IN TRANSISTOR DEVICES - Semiconductor devices are disclosed having modified transistor dimensions configured to provide reduced phase noise in certain amplifier applications. Transistor devices having expanded emitter-poly overlap of the emitter window, which serves to separate the external base area from the lateral emitter-base junction, may experience a reduction of free electrons and holes that diffuse into the electric field of the emitter-base junction, thereby reducing phase noise. | 2014-10-02 |
20140291682 | High Performance GeSi Avalanche Photodiode Operating Beyond Ge Bandgap Limits - Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO | 2014-10-02 |
20140291683 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel includes a gate line, a gate electrode, a planarization layer, a gate insulation layer, an active layer, a data line, a source electrode, a drain electrode, and a pixel electrode. The gate electrode extends from the gate line. The planarization layer covers the gate line and the gate electrode to have an opening exposing a portion of the gate electrode formed therethrough. The gate insulation layer covers a portion of the gate electrode exposed by the opening and the planarization layer. The active layer is formed on the gate insulation layer and corresponds to the gate electrode. The data line is formed. The source electrode extends from the data line to cover a portion of the opening. The drain electrode is spaced apart from the source electrode and covers a portion of the opening. The pixel electrode is connected to the drain electrode. | 2014-10-02 |
20140291684 | DISPLAY SUBSTRATE - A display substrate including a base substrate having a switching device, a first insulating layer over the base substrate having a contact hole partially exposing an electrode of the switching device, a first electrode over the first insulating layer, a second insulating layer over the first electrode, and a second electrode over the second insulating layer, wherein at least one of the first electrode and the second electrode is coupled to the electrode of the switching device through the contact hole, wherein at least one of the first electrode and the second electrode is formed in regions other than a peripheral region of the contact hole to prevent delamination and shorting of the pixel and common electrodes. | 2014-10-02 |
20140291685 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A system suppresses a variation in luminance for each pixel by appropriately suppressing a variation in the parasitic capacitance of a sampling transistor. The system may include a pixel comprising a first transistor having a first deviation that results in a parasitic capacitance and a compensation element having a second deviation that results in a compensatory capacitance that compensates for the parasitic capacitance | 2014-10-02 |
20140291686 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - An array substrate, a method for fabricating the same and a display device as provided relate to the field of display technologies and can overcome the disadvantage of the gate-source capacitance being inconstant and prevent screen flicker, thereby improving the display effect of the display device. The array substrate comprises a plurality of pixel units ( | 2014-10-02 |
20140291687 | DISPLAY UNIT, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - Provided is a display unit that includes: a laminated structure including two first wirings, a first insulating layer, and a concave part, in which the first wirings are adjacent to each other, the first insulating layer is provided on the first wirings and is made of an organic material, and the concave part penetrates, between the first wirings, from the first insulating layer to the first wirings in a laminated direction; and a second insulating layer provided in the concave part and on the laminated structure. | 2014-10-02 |
20140291688 | ACTIVE MATRIX SOLID STATE LIGHT DISPLAY - An exemplary active matrix solid state light display includes a substrate, a plurality of solid state lighting elements and a plurality of thin film transistors. A buffer layer is formed on the substrate. The solid state lighting elements are formed on the buffer layer, and the thin film transistors are formed on the substrate. The thin film transistor is located at a lateral side of the solid state lighting element. The solid state lighting element is a light emitting diode. The thin film transistor electrically connects with the solid state lighting element by a way of a source electrode or a drain electrode connecting with the solid state lighting element. | 2014-10-02 |
20140291689 | LIGHT EMITTING DIODE WITH WAVE-SHAPED BRAGG REFLECTIVE LAYER AND METHOD FOR MANUFACTURING SAME - An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided. | 2014-10-02 |
20140291690 | OPTICAL DEVICE AND METHOD FOR MANUFACTURING SAME - Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity. | 2014-10-02 |
20140291691 | VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON REGROWN GATE - A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure. | 2014-10-02 |
20140291692 | HIGH TEMPERATURE GaN BASED SUPER SEMICONDUCTOR AND FABRICATION PROCESS - A low temperature GaN based super semiconductor comprising a GaN supercell having equal percentages of Cu and at least one material from the family of P, As, or Sb. The GaN supercell is doped in accordance with the formula Ga | 2014-10-02 |
20140291693 | GROUP III-N TRANSISTORS ON NANOSCALE TEMPLATE STRUCTURES - A III-N semiconductor channel is formed on a III-N transition layer formed on a (111) or (110) surface of a silicon template structure, such as a fin sidewall. In embodiments, the silicon fin has a width comparable to the III-N epitaxial film thicknesses for a more compliant seeding layer, permitting lower defect density and/or reduced epitaxial film thickness. In embodiments, a transition layer is GaN and the semiconductor channel comprises Indium (In) to increase a conduction band offset from the silicon fin. In other embodiments, the fin is sacrificial and either removed or oxidized, or otherwise converted into a dielectric structure during transistor fabrication. In certain embodiments employing a sacrificial fin, the III-N transition layer and semiconductor channel is substantially pure GaN, permitting a breakdown voltage higher than would be sustainable in the presence of the silicon fin. | 2014-10-02 |
20140291694 | PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES - A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction. | 2014-10-02 |
20140291695 | Silicon Carbide Device and a Method for Manufacturing a Silicon Carbide Device - A silicon carbide device includes an epitaxial silicon carbide layer including a first conductivity type and a buried lateral silicon carbide edge termination region located within the epitaxial silicon carbide layer including a second conductivity type. The buried lateral silicon carbide edge termination region is covered by a silicon carbide surface layer including the first conductivity type. | 2014-10-02 |
20140291696 | POWER ELECTRONICS MODULES WITH SOLDER LAYERS HAVING REDUCED THERMAL STRESS - Power electronics modules having solder layers with reduced thermal-stress are disclosed. In one embodiment, a power electronics module includes a power electronics device having a first surface, a second surface, a first edge, and a second edge opposite the first edge. The power electronics device has a device length measured from the first edge to the second edge. A first solder layer is adjacent to the first surface of the power electronics device, and a second solder layer is adjacent to the second surface. The first solder layer and the second solder layer have a maximum thickness T along a length that is less than the device length of the power electronics device. A first thermally conductive layer is adjacent to the first solder layer, and a second thermally conductive layer is adjacent to the second solder layer. In some embodiments, the first and second solder layers have tapered portions. | 2014-10-02 |
20140291697 | SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE DEVICE - A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure. | 2014-10-02 |
20140291698 | LOW MICROPIPE 100 MM SILICON CARBIDE WAFER - A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm | 2014-10-02 |
20140291699 | CERAMIC/COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE - A ceramic/copper circuit board of an embodiment includes a ceramic substrate and first and second copper plates bonded to surfaces of the ceramic substrate via bonding layers containing active metal elements. In cross sections of end portions of the first and second copper plates, a ratio (C/D) of an area C in relation to an area D is from 0.2 to 0.6. The area C is a cross section area of a portion protruded toward an outer side direction of the copper plate from a line AB, and the area D is a cross section area of a portion corresponding to a right-angled triangle whose hypotenuse is the line AB. R-shape sections are provided at edges of upper surfaces of the first and second copper plates, and lengths F of the R-shape sections are 100 μm or less. | 2014-10-02 |
20140291700 | SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE - An SiC single crystal includes a low dislocation density region (A) where the density of dislocations each of which has a Burgers vector in a {0001} in-plane direction (mainly a direction parallel to a <11-20> direction) is not more than 3,700 cm/cm | 2014-10-02 |
20140291701 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device that allows the life of solder joint parts of electronic components to be increased. The semiconductor device according to the present invention includes ceramic, an upper pattern formed on the ceramic, and a resistor connected onto the upper pattern via solder. The upper pattern has a portion formed in a recess shape, the portion being connected to the resistor via the solder. | 2014-10-02 |
20140291702 | OPTICAL/ELECTRICAL TRANSDUCER USING SEMICONDUCTOR NANOWIRE WICKING STRUCTURE IN A THERMAL CONDUCTIVITY AND PHASE TRANSITION HEAT TRANSFER MECHANISM - An optical/electrical transducer device has housing, formed of a thermally conductive section and an optically transmissive member. The section and member are connected together to form a seal for a vapor tight chamber. Pressure within the chamber configures a working fluid to absorb heat during operation of the device, to vaporize at a relatively hot location as it absorbs heat, to transfer heat to and condense at a relatively cold location, and to return as a liquid to the relatively hot location. The transducer device also includes a wicking structure mounted within the chamber to facilitate flow of condensed liquid of the working fluid from the cold location to the hot location. At least a portion of the wicking structure comprises semiconductor nanowires, configured as part of an optical/electrical transducer within the chamber for emitting light through and/or driven by light received via the transmissive member. | 2014-10-02 |
20140291703 | Opto-Electronic Module - An optical proximity sensor module includes a substrate, a light emitter mounted on a first surface of the substrate, the light emitter being operable to emit light at a first wavelength, and a light detector mounted on the first surface of the substrate, the light detector being operable to detect light at the first wavelength. The module includes an optics member disposed substantially parallel to the substrate, and a separation member disposed between the substrate and the optics member. The separation member may surround the light emitter and the light detector, and may include a wall portion that extends from the substrate to the optics member and that separates the light emitter and the light detector from one another. The separation member may be composed, for example, of a non-transparent polymer material containing a pigment, such as carbon black. | 2014-10-02 |
20140291704 | PLASMONIC IR DEVICES - An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures. | 2014-10-02 |
20140291705 | PHOSPHOR FILM, METHOD OF MANUFACTURING THE SAME, COATING METHOD OF PHOSPHOR LAYER, METHOD OF MANUFACTURING LED PACKAGE AND LED PACKAGE MANUFACTURED THEREBY - There are provided a phosphor film, a method of manufacturing the same, and a method of coating an LED chip with a phosphor layer. The phosphor film includes: a base film; a phosphor layer formed on the base film and obtained by mixing phosphor particles in a partially cured resin material; and a cover film formed on the phosphor layer to protect the phosphor layer. | 2014-10-02 |
20140291706 | LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device includes: a substrate having a central portion; an LED chip unit formed on the central portion of the substrate; a circuit pattern having a positive electrode and a negative electrode that are formed on the substrate, each of the positive electrode and the negative electrode including an arc portion and at least one extending portion that extends from the arc portion toward the central portion; a wire unit connecting the LED chip unit to the extending portions; a glass layer disposed on the substrate, covering the arc portions and including an opening unit that is aligned with the central portion of the substrate; a dam structure formed on the glass layer and extending along the arc portions; and an encapsulated body disposed substantially within the dam structure to cover the extending portions, the wire unit and the LED chip unit. | 2014-10-02 |
20140291707 | SEMICONDUCTOR LIGHT DEVICE HAVING A GALVANIC NON-INSULATED DRIVER - A semiconductor light-emitting device is disclosed. The device includes a plurality of semiconductor light sources and a driver with no galvanic isolation for operating the semiconductor light sources wherein the semiconductor light sources may be divided into at least two carriers, the carriers are applied on an electrically conductive substrate, and the driver, and current-conducting regions also provided on a surface of the carriers, are electrically insulated from the substrate. | 2014-10-02 |
20140291708 | Alternating Current Vertical Light Emitting Element and Manufacturing Method Thereof - This invention discloses an AC-type vertical light emitting element and fabrication method thereof, which achieves polarity reversal of two LEDs via regional laser stripping and die bonding. The two LEDs are placed on a conductive substrate (e.g. Si substrate); therefore, the bonding pads of the two LEDs are on the back of the conductive substrate and the light emitting surfaces of the two LEDs, thus overcoming such problems of low light emitting efficiency and high thermal resistance of the traditional lateral structure. | 2014-10-02 |
20140291709 | DISPLAY DEVICE - A display device includes a first substrate, a second substrate, and a plurality of light emitting sections. The first substrate includes a first surface and a second surface which faces the first surface. The second substrate is arranged to face the first substrate, and is configured with a first surface which faces the second surface of the first substrate, and a second surface which faces the first surface. The plurality of light emitting sections is provided on the second surface of the first substrate while being separated from the second substrate. A light transmission suppression layer on which a light transmission section to transmit light from light emitting sections is provided is formed on the second surface of the second substrate in correspondence to each light emitting section. An anti-reflection layer is formed in the light transmission section. | 2014-10-02 |
20140291710 | LIGHT EMITTING DEVICE AND IMAGE DISPLAY UNIT - A light emitting device includes a package having a recess, a lead frame buried in the package so that one end of the lead frame is exposed at a bottom of the recess and another end protrudes to an exterior of the package, a light emitting element arranged on the lead frame exposed at the bottom of the recess, and an encapsulant filled in the recess. The package includes, at the side face where the lead frame protrudes, a first side face formed inwardly relative to a side face of the lead frame, and a second side face formed at a lower portion of the first side face and protruded so as to cover a top face of the lead frame. | 2014-10-02 |
20140291711 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND PACKAGE STRUCTURE THEREOF - A semiconductor light emitting device and a package structure thereof are provided. The semiconductor light emitting device includes a substrate, an epitaxial structure layer, a first electrode, a second electrode and a patterned film structure. The substrate has a first surface and a second surface opposite to the first surface. The epitaxial structure layer is disposed on the first surface, and includes a first type semiconductor layer, an active layer and a second type semiconductor layer on the first surface in sequence. The first electrode is formed on an exposed surface of the first type semiconductor layer. The second electrode is formed on an exposed surface of the second type semiconductor layer. The patterned film structure is disposed on the second surface and includes thin films composed of a metamaterial having a negative refraction index. | 2014-10-02 |
20140291712 | PHOSPHOR AND LIGHT EMITTING DEVICE - A phosphor and a light emitting device are provided. The phosphor comprises a composition having a formula of (Ba | 2014-10-02 |
20140291713 | FLIP-CHIP LIGHT EMITTING DIODE PACKAGE WITH MOISTURE BARRIER LAYER - An exemplary light emitting diode (LED) package includes a substrate, a first electrode penetrating downward through the substrate, a second electrode penetrating downward through the substrate and spaced from the first electrode, an LED die arranged on the substrate and mounted to the first and second electrodes by flip-chip technology, and an encapsulation layer formed on the substrate to encapsulate the LED die therein. The substrate includes a top surface and a bottom surface at opposite sides thereof. Top ends of the first and second electrodes are exposed at the top surface of the substrate, and bottom ends of the first and second electrodes are exposed at the bottom surface of the substrate. A moisture barrier layer is attached on the bottom of the LED package to cover a joint of the first and/or second electrode and the substrate. | 2014-10-02 |
20140291714 | Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part. | 2014-10-02 |
20140291715 | COMPACT LED PACKAGE WITH REFLECTIVITY LAYER - LED packages are disclosed that are compact and efficiently emit light, and can comprise encapsulants with curved and planar surfaces. The packages can comprise a submount with a one or a plurality of LEDs, and in those with a plurality of LEDs each of the LEDs can emit the same or different wavelengths of light than the others. A blanket conversion material layer can be included on at least some of the LEDs and the submount. The encapsulant can be on the submount, over at least some of the LEDs, with each of the planar surfaces being vertical and aligned with one of the edges of the submount. The packages can also comprise reflective layers to minimize losses due to light absorption, which in turn can increase the overall package emission efficiency. | 2014-10-02 |
20140291716 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device with improved light extracting efficiency and further higher heat releasing performance. A light emitting device includes a planar lead frame having a first lead and a second lead, and includes a light emitting element mounted on the first lead, a resin frame surrounding a periphery of the light emitting element, a first sealing resin filled in the inner side of the resin frame and sealing the light emitting element, and a second sealing resin covering the resin frame and the first sealing resin. Lower end of inner surface of the resin frame is arranged only on the first lead, and at an outside of the resin frame, and the second resin member covers at least a part of the first lead and the second lead. Of the back-surface of the first lead, a region directly under the blight emitting element is exposed. | 2014-10-02 |
20140291717 | METHOD FOR MANUFACTURING MACH-ZEHNDER MODULATOR, METHOD FOR MANUFACTURING OPTICAL WAVEGUIDE, AND OPTICAL WAVEGUIDE - A method for manufacturing a Mach-Zehnder modulator includes the steps of forming a stacked semiconductor layer, the stacked semiconductor layer including a first conductivity type semiconductor layer, a core layer and a second conductivity type semiconductor layer, forming a waveguide mesa, the waveguide mesa having a first portion, a second portion and a third portion arranged between the first and second portions; forming a buried region on the waveguide mesa; forming an opening in the buried region on the third portion by etching the buried region using a mask; etching the second conductivity type semiconductor layer in the third portion through the buried region as a mask; and removing the buried region after etching the second conductivity type semiconductor layer. In the step of etching the second conductivity type semiconductor layer, the buried region covers a side surface of the third portion of the waveguide mesa. | 2014-10-02 |
20140291718 | LIGHT EMITTING DIODES - A LED includes a red light emitting unit, a green light emitting unit, a blue light emitting unit, and an optical grating located on a same plane. The red light emitting unit, the green light emitting unit and the blue light emitting unit are located around the optical grating. Each light emitting unit includes a first substrate, a first semiconductor layer, an first active layer, a second semiconductor layer and a first reflector layer stacked in that order. The optical grating includes a second substrate, a first semiconductor layer, an active layer, and a second semiconductor layer stacked in that order. The second substrate and the three first substrates are a continuous integrated substrate structure. | 2014-10-02 |
20140291719 | LIGHT EMITTING DIODE PACKAGE HAVING FRAME WITH BOTTOM SURFACE HAVING TWO SURFACES DIFFERENT IN HEIGHT - Provided is a light emitting device package. It is a substrate comprising a top and a bottom surfaces being substantially parallel to each other; a light emitting diode chip on the substrate; a frame disposed around the light emitting diode chip and configured to reflect light emitted from the light emitting diode chip, the frame having an opening; a first metal layer disposed on the top surface of the substrate; a second metal layer disposed on the top surface of the substrate; a third metal layer disposed on the bottom surface of the substrate; a through hole connected between the first metal layer and the third metal layer; a material being filled in the opening of the frame; and a lens disposed on the material, wherein the substrate and the frame are separate from each other. | 2014-10-02 |
20140291720 | LIGHT EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING SAME - An LED device includes a substrate having a top surface and a bottom surface. The substrate defines a through hole at a center thereof. The LED device also includes an electrode board. The electrode board defines a concave portion at a center thereof, and a convex portion connected to and surrounding two sides of the concave portion. The concave portion includes a first electrode and a second electrode isolated from each other, and is located in the through hole of the substrate. A bottommost surface of the concave portion is substantially coplanar with the bottom surface of the substrate, and a top surface of the convex portion is substantially coplanar with the top surface of the substrate. An LED chip is arranged on the concave portion, and is electrically connected to the first electrode and the second electrode. A method for manufacturing plural such LED devices is also provided. | 2014-10-02 |
20140291721 | Surge Protection Circuit for Power MOSFETs used as Active Bypass Diodes in Photovoltaic Solar Power Systems - A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit comprises, a detection circuit for detecting the start of a surge event, a switch disposed to connect the MOSFET's drain to it's gate in response to the start of the surge, a diode in series with the switch, a bistable circuit for keeping the switch closed during the surge, and a means of resetting the bistable circuit after the surge. | 2014-10-02 |
20140291722 | POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of the trench gate, and an immunity improving part formed between the trench gates and including a second conductivity-type body layer, a preventing film formed on the surface of the trench gate, and a gate oxide having a thickness less than that the gate oxide of the current increasing part. | 2014-10-02 |
20140291723 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device. | 2014-10-02 |
20140291724 | Insulated Gate Bipolar Transistor Including Emitter Short Regions - A semiconductor device includes an IGBT having a semiconductor body including a transistor cell array in a first area. A junction termination structure is in a second area surrounding the transistor cell array at a first side of the semiconductor body. An emitter region of a first conductivity type is at a second side of the semiconductor body opposite the first side. The device further includes a diode. One of the diode anode and cathode includes the body region. The other one of the anode and the cathode includes a plurality of distinct first emitter short regions of a second conductivity type at the second side facing the transistor cell array, and at least one second emitter short region of the second conductivity type at the second side facing the junction termination structure. The at least one second emitter short region is distinct from the first emitter short regions. | 2014-10-02 |
20140291725 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A compound semiconductor device includes: a substrate; and a compound semiconductor lamination structure formed over the substrate, the compound semiconductor lamination structure including a buffer layer containing an impurity, and an active layer formed over the buffer layer. | 2014-10-02 |
20140291726 | TRENCH CONFINED EPITAXIALLY GROWN DEVICE LAYER(S) - Trench-confined selective epitaxial growth process in which epitaxial growth of a semiconductor device layer proceeds within the confines of a trench. In embodiments, a trench is fabricated to include a pristine, planar semiconductor seeding surface disposed at the bottom of the trench. Semiconductor regions around the seeding surface may be recessed relative to the seeding surface with Isolation dielectric disposed there on to surround the semiconductor seeding layer and form the trench. In embodiments to form the trench, a sacrificial hardmask fin may be covered in dielectric which is then planarized to expose the hardmask fin, which is then removed to expose the seeding surface. A semiconductor device layer is formed from the seeding surface through selective heteroepitaxy. In embodiments, non-planar devices are formed from the semiconductor device layer by recessing a top surface of the isolation dielectric. In embodiments, non-planar devices CMOS devices having high carrier mobility may be made from the semiconductor device layer. | 2014-10-02 |