40th week of 2014 patent applcation highlights part 58 |
Patent application number | Title | Published |
20140295629 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses. | 2014-10-02 |
20140295630 | SiGe SRAM BUTTED CONTACT RESISTANCE IMPROVEMENT - The present disclosure relates to a method for fabricating a butted a contact arrangement configured to couple two transistors, wherein an active region of a first transistor is coupled to a gate of a second transistor. The gate of the second transistor is formed from a gate material which comprises a dummy gate of the first transistor, and is configured to straddle a boundary between the active region of the first transistor and an isolation layer formed about the first transistor. The butted a contact arrangement results in a decreased contact resistance for the butted contact as compared to previous methods. | 2014-10-02 |
20140295631 | ANALOG FLOATING-GATE CAPACITOR WITH IMPROVED DATA RETENTION IN A SILICIDED INTEGRATED CIRCUIT - An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes portions serving as a transistor gate electrode, a plate of a metal-to-poly storage capacitor, and a plate of poly-to-active tunneling capacitors. A silicide-block film comprised of a layer of silicon dioxide underlying a top layer of silicon nitride blocks the formation of silicide cladding on the electrode, while other polysilicon structures in the integrated circuit, such as polysilicon-to-metal capacitors, are silicide-clad. Following silicidation, a capacitor dielectric is deposited over the remaining polysilicon structures, followed by formation of an upper metal plate. | 2014-10-02 |
20140295632 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING GROOVED SOURCE CONTACT REGION - In a method of fabricating a semiconductor device, a channel layer is formed on a substrate, and trench patterns are formed in the channel layer. Impurity bodies are formed in the channel layer between the trench patterns, and grooves are formed between the trench patterns in the impurity bodies formed in the channel layer. Source isolation regions are formed in the impurity bodies at bottom portions of the grooves, and source regions are formed in the impurity bodies at sidewall portions of the grooves. | 2014-10-02 |
20140295633 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: a semiconductor substrate including a drain, a drift making contact with a front face of the drain, a body contacting with a front face of the drift, a source provided in part of a front face of the body, and a floating surrounded by the drift; and a gate including an insulator formed on an inner wall of a trench and a electrode disposed inside the insulator and which has a bottom portion contacting with the floating, the manufacturing method includes: forming the trench in a semiconductor wafer so as to have a bottom portion in which an end portion in a short direction perpendicular to a longitudinal direction thereof is deeper than a central portion; injecting an impurity ions into the bottom portion of the trench; and forming the central portion of the trench in the short direction to be deepened. | 2014-10-02 |
20140295634 | MULTI-GATE FIELD-EFFECT TRANSISTOR PROCESS - A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor. | 2014-10-02 |
20140295635 | METHOD OF MANUFACTURING TRANSISTOR AND METHOD OF MANUFACTURING AMPLIFIER - A method of manufacturing a transistor with suppressed characteristic variations caused by gate current, and a method of manufacturing an amplifier using such a transistor are provided. The transistor includes a SiC substrate, an AlGaN barrier layer, and a GaN buffer layer grown on the SiC substrate, a source electrode and a drain electrode located on the AlGaN barrier layer, and a gate electrode connected to the AlGaN barrier layer via a Schottky junction. In a burn-in step, a gate voltage is applied to the transistor to cause a drain current Id to flow, and a drain voltage is applied to the transistor to heat the transistor to reduce the gate current of the transistor compared to the gate current before the burn-in. | 2014-10-02 |
20140295636 | SPACER PASSIVATION FOR HIGH ASPECT RATIO ETCHING OF MULTILAYER STACKS FOR THREE DIMENSIONAL NAND DEVICE - A method of making a semiconductor device includes forming a stack of alternating layers of a first material and a second material over a substrate, etching the stack to form at least one opening extending partially through the stack and forming a masking layer on a sidewall and bottom surface of the at least one opening. The method also includes removing the masking layer from the bottom surface of the at least one opening while leaving the masking layer on the sidewall of the at least one opening, and further etching the at least one opening to extend the at least one opening further through the stack while the masking layer remains on the sidewall of the at least one opening. | 2014-10-02 |
20140295637 | SPACER REPLACEMENT FOR REPLACEMENT METAL GATE SEMICONDUCTOR DEVICES - A method comprising steps of removing a first dielectric material, including a hard mask layer and one or more spacer material layers, from a semiconductor device having a sacrificial gate whose sidewalls being covered by said spacer material layers, and a raised source and a raised drain region with both, together with said sacrificial gate, being covered by said hard mask layer, wherein the removing is selective to the sacrificial gate, raised source region and raised drain region and creates a void between each of the raised source region, raised drain region and sacrificial gate. The method includes depositing a conformal layer of a second dielectric material to the semiconductor device, wherein the second material conforms in a uniform layer to the raised source region, raised drain region and sacrificial gate, and fills the void between each of the raised source region, raised drain region and sacrificial gate. | 2014-10-02 |
20140295638 | THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE - Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines. | 2014-10-02 |
20140295639 | FIELD FOCUSING FEATURES IN A RERAM CELL - A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters ( | 2014-10-02 |
20140295640 | CAPACITOR ARRAYS FOR MINIMIZING GRADIENT EFFECTS AND METHODS OF FORMING THE SAME - Methods of forming semiconductor devices. The method includes forming a capacitor array comprising a plurality of cells in a two-dimensional grid. The step of forming includes forming a plurality of operational capacitors in a first subset of the plurality of cells along a diagonal of the array, the plurality of operational capacitors comprising a first operational capacitor formed in a cell at a first edge of the capacitor array and at a first edge of the diagonal of the capacitor array. The step of forming also includes forming a plurality of dummy patterns about the plurality of operational capacitors in the capacitor array in a second subset of the plurality of cells to achieve symmetry in the grid about the diagonal. The method also includes electrically coupling each one of the plurality of operational capacitors to another one of the plurality of operational capacitors. | 2014-10-02 |
20140295641 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a semiconductor substrate in which an active region and an isolation region are defined, a tunnel insulating layer and a floating gate formed on the semiconductor substrate in the active region, a trench formed in the semiconductor substrate in the isolation region, a dielectric layer formed along a top surface and a portion of a side surface of the floating gate, wherein the dielectric layer extends higher than a surface of the semiconductor substrate in the isolation region and defines an air gap in the trench, and a control gate formed on the dielectric layer, wherein the dielectric layer includes the first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer. | 2014-10-02 |
20140295642 | DOUBLE LAYER TRANSFER METHOD - A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E | 2014-10-02 |
20140295643 | WAFER PROCESSING METHOD - In a wafer processing method, a modified layer is formed inside a wafer along planned dividing lines by irradiating the wafer with a laser beam with such a wavelength as to be transmitted through the wafer from the back surface side of the wafer along the dividing lines. A first modified layer is formed near the back surface of the wafer by irradiating the wafer with the light focal point of the laser beam positioned near the back surface of the wafer. The wafer is then irradiated with the light focal point of the laser beam positioned on the front surface side. Then plural second modified layers are formed in a multi-layering manner with sequential movement of the light focal point toward an area leading to the first modified layer. The wafer is divided into individual devices along the dividing lines by applying an external force to the wafer. | 2014-10-02 |
20140295644 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - Provided is a method of manufacturing semiconductor chips superior in chip yield, reduction in chipping, and handling ability. An insulating film in a dividing region is removed by plasma etching to a front surface. Then, roughness on a resist mask formed on the front surface is removed by plasma treatment before a BG tape is attached. After a semiconductor wafer is thinned by grinding of a backside surface thereof, the BG tape is peeled. The semiconductor wafer is divided into individual semiconductor chips by plasma etching from the front surface thereof. | 2014-10-02 |
20140295645 | SAPPHIRE SUBSTRATE FLATTENING METHOD - A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface in the condition where a first surface of the sapphire substrate is in contact with the holding surface of the stage through a liquid resin, a resin curing step of curing the liquid resin, a first grinding step of grinding a second surface of the sapphire substrate opposite to the first surface, a resin removing step of removing the liquid resin cured on the first surface of the sapphire substrate, and a second grinding step of grinding the first surface of the sapphire substrate. | 2014-10-02 |
20140295646 | Dicing Sheet with Protective Film Forming Layer and Chip Fabrication Method - A dicing sheet with a protective film forming layer has a substrate film, an adhesive layer, and a protective film forming layer, and at a minimum, the adhesive layer is formed in an area surrounding the protective film forming layer in a planar view, and the substrate film has the following characteristics (a)-(c): (a) the melting point either exceeds 130° C. or the film has no melting point; (b) the thermal contraction rate under conditions of heating at 130° C. for two hours is from −5 to +5%, and (c) the degree of elongation-to-break in the MD direction and the CD direction is at least 100%, and the stress at 25% is no more than 100 MPa. | 2014-10-02 |
20140295647 | BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION - A computer program storage product includes instructions for forming a fin field-effect-transistor. The instructions are configured to perform a method. The method includes implanting a dopant into an exposed portion of a semiconductor substrate within a cavity. The cavity is formed in a dielectric layer on the semiconductor substrate. The cavity exposes the portion of the semiconductor substrate within the cavity. A semiconductor layer is epitaxially grown within the cavity atop the dopant implanted exposed portion of the semiconductor substrate. A height of the cavity defines a height of the epitaxially grown semiconductor. | 2014-10-02 |
20140295648 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas. | 2014-10-02 |
20140295649 | SYNTHESIS, CAPPING AND DISPERSION OF NANOCRYSTALS - Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films. | 2014-10-02 |
20140295650 | METHOD FOR FABRICATING PATTERNED STRUCTURE OF SEMICONDUCTOR DEVICE - A method of fabricating a patterned structure of a semiconductor device is provided. First, a substrate having a first region and a second region is provided. A target layer, a hard mask layer and a first patterned mask layer are then sequentially formed on the substrate. A first etching process is performed by using the first patterned mask layer as an etch mask so that a patterned hard mask layer is therefore formed. Spacers are respectively formed on each sidewall of the patterned hard mask layer. Then, a second patterned mask layer is formed on the substrate. A second etching process is performed to etch the patterned hard mask layer in the second region. After the exposure of the spacers, the patterned hard mask layer is used as an etch mask and an exposed target layer is removed until the exposure of the corresponding substrate. | 2014-10-02 |
20140295651 | BACKSIDE STRESS COMPENSATION FOR GALLIUM NITRIDE OR OTHER NITRIDE-BASED SEMICONDUCTOR DEVICES - A method includes forming a stress compensation layer over a first side of a semiconductor substrate and forming a Group III-nitride layer over a second side of the substrate. Stress created on the substrate by the Group III-nitride layer is at least partially reduced by stress created on the substrate by the stress compensation layer. Forming the stress compensation layer could include forming a stress compensation layer from amorphous or microcrystalline material. Also, the method could include crystallizing the amorphous or microcrystalline material during subsequent formation of one or more layers over the second side of the substrate. Crystallizing the amorphous or microcrystalline material could occur during subsequent formation of the Group III-nitride layer and/or during an annealing process. The amorphous or microcrystalline material could create no or a smaller amount of stress on the substrate, and the crystallized material could create a larger amount of stress on the substrate. | 2014-10-02 |
20140295652 | GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS - A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a first III-nitride epitaxial structure coupled to a first portion of a surface of the first III-nitride epitaxial layer. The first III-nitride epitaxial structure has a sidewall. The semiconductor device further includes a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure, a second III-nitride epitaxial layer of the first conductivity type coupled to the sidewall of the second III-nitride epitaxial layer and a second portion of the surface of the first III-nitride epitaxial layer, and a third III-nitride epitaxial layer of a second conductivity type coupled to the second III-nitride epitaxial layer. The semiconductor device also includes one or more dielectric structures coupled to a surface of the third III-nitride epitaxial layer. | 2014-10-02 |
20140295653 | Manufacturing Apparatus And Manufacturing Method For Quantum Dot Material - A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing. | 2014-10-02 |
20140295654 | METHOD OF FORMING AN INTEGRATED CIRCUIT - A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, the patterned mask layer having a plurality of first features with a first pitch. The method includes patterning the material layer by using the patterned mask layer as a mask to form the first features in the material layer. The method includes trimming the patterned mask layer, after patterning the material layer, to form a trimmed patterned mask layer. The method further includes introducing a plurality of dopants into the material layer exposed by the trimmed patterned mask layer to form doped regions having a second pitch, wherein the second pitch is different from the first pitch. The method further includes removing the trimmed patterned mask layer to expose un-doped regions in the material layer; and removing the un-doped regions to form a plurality of second features corresponding to the respective doped regions. | 2014-10-02 |
20140295655 | METHOD FOR FORMING THROUGH-SILICON VIA (TSV) WITH DIFFUSED ISOLATION WELL - A semiconductor device and method for forming the same provide a through silicon via (TSV) surrounded by a dielectric liner. The TSV and dielectric liner are surrounded by a well region formed by thermal diffusion. The well region includes a dopant impurity type opposite the dopant impurity type of the substrate. The well region may be a double-diffused well with an inner portion formed of a first material and with a first concentration and an outer portion formed of a second material with a second concentration. The surrounding well region serves as an isolation well, reducing parasitic capacitance. | 2014-10-02 |
20140295656 | APPARATUS AND METHOD FOR THIN WAFER TRANSFER - A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer. | 2014-10-02 |
20140295657 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING MULTI-LAYERED INTERCONNECT STRUCTURE - Disclosed is a semiconductor device provided with an active element in a multilayer interconnect layer and decreased in a chip area. A second interconnect layer is provided over a first interconnect layer. A first interlayer insulating layer is provided in the first interconnect layer. A semiconductor layer is provided in a second interconnect layer and in contact with the first interlayer insulating layer. A gate insulating film is provided over the semiconductor layer. A gate electrode is provided over the gate insulating film. At least two first vias are provided in the first interconnect layer and in contact by way of upper ends thereof with the semiconductor layer. | 2014-10-02 |
20140295658 | SEMICONDUCTOR DEVICE COMPRISING TRENCH GATE AND BURIED SOURCE ELECTRODES - A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate electrode arranged in an upper portion of the trench and spaced apart from one another. A surface gate contact extends into the upper portion of the trench and is in physical and electrical contact with the first gate electrode and second gate electrode. | 2014-10-02 |
20140295659 | METHOD OF MAKING A GATE STRUCTURE - A method of making a gate structure includes forming a trench in a dielectric layer. The method further includes forming a gate dielectric layer in the trench. The gate dielectric layer defines an opening in the dielectric layer. The method includes forming a gate electrode in the opening. Forming the gate electrode includes filling a width of a bottom portion of the opening with a first metal material. The first metal material has a recess. Forming the gate electrode includes filling an entire width of a top portion of the opening with a homogeneous second metal material. The homogeneous second metal material has a protrusion extending into the recess, and a maximum width of the homogeneous second metal material is equal to a maximum width of the first metal material. A top surface of the gate dielectric layer is co-planar with a top surface of the homogeneous second metal material. | 2014-10-02 |
20140295660 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally foamed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench. | 2014-10-02 |
20140295661 | Passivated Copper Chip Pads - A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels. | 2014-10-02 |
20140295662 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines. | 2014-10-02 |
20140295663 | Aluminum Interconnection Apparatus - An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is generated by a reaction between the first alloy layer and an adjacent dielectric layer during a thermal process. | 2014-10-02 |
20140295664 | METHODS OF FORMING MASKING LAYERS FOR USE IN FORMING INTEGRATED CIRCUIT PRODUCTS - One illustrative method disclosed herein includes forming a seed layer above a structure, forming a nucleation layer on the seed layer, forming a plurality of spaced-apart, vertically oriented alloy structures that are comprised of materials from the seed layer and the nucleation layer, forming a sacrificial material layer above the nucleation layer and around the alloy structures, performing an etching process to remove the alloy structures and portions of the seed layer so as to thereby define a plurality of openings, forming an initial masking structure in each of the openings, performing an etching process to remove the sacrificial material layer and the nucleation layer so as to thereby expose the structure and define a masking layer comprised of the initial masking structures, and performing at least one process operation on the structure through the masking layer. | 2014-10-02 |
20140295665 | METHOD FOR REMOVING NATIVE OXIDE AND ASSOCIATED RESIDUE FROM A SUBSTRATE - Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH | 2014-10-02 |
20140295666 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film. | 2014-10-02 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 2014-10-02 |
20140295668 | REDUCING BOWING BIAS IN ETCHING AN OXIDE LAYER - An etching method in which bowing or lateral etching is reduced or minimized, particularly with respect to bowing which can occur in etching of an oxide layer in high aspect ratio structures. It has been recognized that such bowing typically occurs in the upper portion of the oxide layer in terms of its location, but that the timing at which the bowing occurs is during the etching of the lower regions of the oxide layer and also during etching of a poly-Si or SOI layer located under the oxide layer. In a preferred form, a thicker passivation layer is formed in the upper region of the oxide layer and a thinner passivation layer is formed when etching the lower portion of the oxide layer or deeper in the etch trench. As a result, reduction in the passivation layer in the upper region which can occur during etching of the lower or deeper region of the trench can be accommodated by the increased thickness passivation layer. In addition, the bowing can be additionally reduced by accelerating the poly-Si or SOI etch, for example, by poly-Si simultaneously using both argon and nitrogen during the etch. | 2014-10-02 |
20140295669 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes forming a first guide layer on a processed film, phase-separating a first self-assembly material with the use of the first guide layer to form a first self-assembly pattern including a first polymer portion and a second polymer portion, selectively removing the first polymer portion, forming a second guide layer with the use of the second polymer portion, and phase-separating a second self-assembly material with the use of the second guide layer to form a second self-assembly pattern including a third polymer portion and a fourth polymer portion. | 2014-10-02 |
20140295670 | DENSE OXIDE COATED COMPONENT OF A PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF - A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component. | 2014-10-02 |
20140295671 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma. | 2014-10-02 |
20140295672 | VACUUM PROCESSING APPARATUS AND OPERATING METHOD OF THE SAME - A vacuum processing apparatus including an atmospheric transfer chamber including on a front side a plurality of cassette stages on which cassettes having stored samples as processing objects are to be mounted, a first transfer chamber which is disposed via a lock chamber on a back side of the atmospheric transfer chamber and to which a sample decompressed to first pressure is transferred, a second transfer chamber which is disposed on a back side of the first transfer chamber and to which the sample is transferred via a relay chamber from the first transfer chamber, a first processing vessel which is coupled to the first transfer chamber and in which the sample is transferred under the first pressure, and a second processing vessel which is coupled to the second transfer chamber and in which the sample is transferred under the second pressure. | 2014-10-02 |
20140295673 | SILANE OR BORANE TREATMENT OF METAL THIN FILMS - The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition. | 2014-10-02 |
20140295674 | ANGLED GAS CLUSTER ION BEAM - An angled gas cluster ion beam (“GCIB”) and methods for using the same are disclosed. Gas clusters are ionized to create a gas cluster beam directed towards a semiconductor wafer. The semiconductor wafer is positioned so that it intercepts the gas cluster beam at an angle that is non-perpendicular to the beam, so that the gas cluster ions in the beam react with structures on the semiconductor wafer asymmetrically, allowing for asymmetrical deposition on or etching of material thereon. According to one embodiment, GCIB is used to form asymmetric spacers having different materials, different thicknesses, or both. | 2014-10-02 |
20140295675 | SILICON OXIDE FILM FORMING METHOD AND SILICON OXIDE FILM FORMING APPARATUS - A silicon oxide film forming method includes performing a set one or more times, the set including: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process and the load process, a gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated. | 2014-10-02 |
20140295676 | METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS, VERTICAL HEAT TREATMENT APPARATUS AND NON-TRANSITORY RECORDING MEDIUM - A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas. | 2014-10-02 |
20140295677 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at least one of exhausting the processing chamber and supplying a purge gas into the processing chamber to remove gas remaining in the processing chamber; supplying an oxidant gas into the processing chamber; and performing at least one of exhausting the processing chamber and supplying the purge gas into the processing chamber to remove gas remaining in the processing chamber, wherein supplying an oxidant gas includes: supplying a first oxidant gas into the processing chamber at a first concentration; and supplying a second oxidant gas into the processing chamber at a second concentration higher than the first concentration. | 2014-10-02 |
20140295678 | CONTROLS - A connector part is provided for supplying power to an independent appliance part in a cordless electrical appliance. The connector part is of the type that makes an electrical connection between the electrical terminations of the appliance connector part and corresponding electrical contacts in the connector part when the independent connector parts are brought together, irrespective or substantially irrespective of their relative angular orientation. The connector part comprises a sub-assembly in which the electrical contacts are permanently attached to respective conductors in a mains power supply cable. The point of permanent attachment may be protected by a plastics overmolding. | 2014-10-02 |
20140295679 | FIXING ASSEMBLY FOR DATA CABLE - A fixing assembly for fixing a number of data cables to a motherboard with a number of sockets includes a frame mounted on the motherboard and receiving the sockets, and two blocking members detachably mounted to the frame. The blocking members each include a blocking piece blocking tops of the adjacent connectors, to prevent connectors of the data cables from being disengaged from the corresponding sockets. | 2014-10-02 |
20140295680 | ELECTRICAL CONNECTOR HAVING AN ELECTRICAL CONTACT WITH A PLURALITY OF CONTACT BEAMS - Electrical connector including a connector housing having a mating side that faces in a mating direction. The mating side configured to engage a mating connector. The electrical connector also includes an electrical contact held by the connector housing. The electrical contact includes a common body section and first, second, and third contact beams that are arranged along the mating side and have respective contact bases coupled to the body section. Each of the first, second, and third contact beams extend in the mating direction from the respective contact base to a respective distal end. Each of the first, second, and third contact beams has a beam length that is measured from the respective contact base to the respective distal end. The beam lengths of the first, second, and third contact beams being different from one another. | 2014-10-02 |
20140295681 | ELECTRICAL CONNECTOR - An electrical connector is to be connected to a mating electrical connector in a connecting direction. The electrical connector includes a terminal; and a housing for holding the terminal. The terminal includes a board connecting portion to be connected to a board; a holding portion fixed to the housing; a contact region for contacting a mating contact portion of the mating electrical connector; a contact piece capable of elastically deforming; and a contact portion formed at a distal end portion of the contact piece. The housing includes an inner piece portion and an outer piece portion. The contact piece is disposed between the inner piece portion and the outer piece portion. The outer piece portion includes inner piece holding portions at both sides thereof. The inner piece holding portions are away from each other by a distance greater than a width of the inner piece portion. | 2014-10-02 |
20140295682 | POWER ADAPTER WITH PLUG MEMBER STOWABLE IN HOUSING - An exemplary power adapter includes a plug member and a housing. The plug member includes a base and a pair of conductive pins located on the base. A number of protrusions protrude from a side of the base. The housing includes a receiving space for receiving the conductive pins. A receiving slot is located on the sidewall of the receiving space. A number of guiding cutouts extends from a top surface of the housing. The guiding cutouts are in communication with the receiving slot and the receiving space. | 2014-10-02 |
20140295683 | Plug for an Electrical Plug-and-Socket Connection - Plug for an electrical plug-and-socket connection having embedded plug contacts being connected with wires leading to the electrical circuit of a vehicle. Plug openings of the plug body in front of the plug contacts for inserting contacts of a socket into the plug openings thereby providing electrical connection between the socket contacts and the plug contacts. A dissolving arm having a lift part and a handling part, the arm being rotatably at a bearing such that upon pressing down the handling part of the dissolving arm in the direction towards the plug body, the lift part of the dissolving arm lifted away from the plug body for lifting a cover of the socket overlying on the plug body and the lift part of the dissolving arm when the plug is being inserted into the socket. | 2014-10-02 |
20140295684 | Socket for an Electrical Plug-and-Socket Connection - Socket for an electrical plug-and-socket connection comprising a socket housing having a plug-in opening for mating with a plug, a cover for closing the plug-in opening and contacts. A contact insert with receptacle contacts connected with the contacts by inserting the insert on connection ends of the contacts, the receptacle contacts being connectable with a wire each. A backshell being held in the housing and having a flexible latch for fixing in a recess of the socket housing as a snap fit. A locking slider captively attached at the backshell and comprising two arms insertable into respective slits in said housing and the backshell, the slits matching each other when the contact insert in the backshell is inserted on the connection ends of the contacts such that the arms of the locking slider inserted into the matching slits secure the backshell with the contact insert. | 2014-10-02 |
20140295685 | ELECTRICAL CONNECTOR AND ELECTRICAL CONNECTION HAVING A CONNECTOR - An electrical connector includes a housing, a latch arranged relative to the housing in a first direction, and a securing member arranged between the housing and the latch. The latch includes an engagement element configured to be movable in the first direction when not blocked. The securing member includes a supporting surface and a counter-engagement element. The supporting surface is configured to support the latch in the first direction. The engagement and counter-engagement elements are configured such that when the engagement and counter-engagement elements are engaged with each other, a displacement of the securing element in and against a second direction relative to the housing is constrained, and when the engagement and counter-engagement elements are disengaged from each other, the securing element is adjustable relative to the housing along the second direction. | 2014-10-02 |
20140295686 | CONNECTOR - A connector mounted to a circuit board to be inserted into a storage destination, and configured to include: a connector body including a housing part for housing an electric terminal connected to a predetermined wire of the circuit board, and a base part connected to the housing part; a panel including an opening which is formed in a pair of opposed surfaces and through which the housing part can be inserted; an ejector for detaching the circuit board from an insertion destination by turning; and a connection member connected to a turning shaft part for turning the ejector to fasten the circuit board and the base part of the connector body. The connector can be mounted, together with the ejector, to a compact circuit board corresponding to a compact unit wire rack and can be efficiently mounted in a saved space. | 2014-10-02 |
20140295687 | SYSTEM HAVING AN AUXILIARY FITTING JIG - Disclosed is a system including: a female connector; a male connector; and an auxiliary fitting jig which fits the female connector and the male connector to each other, including: a jig hooking section which includes a jig locking section which is engaged with one of the female and male connectors and a jig pushing section which is engaged with the other of the female and male connectors; and a jig gripping section which is integrally formed with the jig hooking section, rotates the jig pushing section by rotating the jig hooking section using the jig locking section as a supporting point, and fits the other connector to the one connector | 2014-10-02 |
20140295688 | Medical Devices Including Metallic Connector Enclosures - Medical devices provide metallic connector enclosures. The metallic connector enclosures may be constructed with relatively thin wails in comparison to polymer connector enclosures to aid in miniaturizing the medical device. The metallic connector enclosures may be constructed with interior surfaces that deviate less from an ideal inner surface shape in comparison to polymer connector enclosures to allow for better concentricity of electrical connectors. The metallic connector enclosures may include a panel that allows access to the cavity of the connector enclosure where set screw blocks, lead connectors, spacers, seals, and the like may be located. Furthermore, the lead connectors within the metallic connector enclosures may be separated from the metallic connector enclosure by being positioned within non-conductive seals that reside within features included in cavity walls of the connector enclosure. Similarly, set screw blocks may be separated from the metallic connector enclosure by non-conductive spacers present within the cavity. | 2014-10-02 |
20140295689 | ELECTRICAL CONNECTOR ASSEMBLY WITH IMPROVED METALLIC COVER - An electrical connector assembly ( | 2014-10-02 |
20140295690 | MULTI-POLE PLUG CONNECTION UNIT FOR THREE-PHASE ALTERNATING CURRENT SYSTEMS - A multi-pole plug connection unit for three-phase alternating current systems having two plug connection parts which complement one another for the purpose of kink-free plug connection and having a locking sleeve which axially secures the plug connection parts in relation to one another in the plug-connected state is known. Each plug connection part is constructed as a monolithic insulating body in which a plurality of electrical plug contacts are axially latched, and an outside diameter of the plug connection parts and the locking sleeve is less than 23 mm, and the plug connection unit is designed to transmit voltage and current intensity ranges of up to 630 volts/16 amperes. The multi-pole plug connection unit is used for energy and signal transmission in machine tools. | 2014-10-02 |
20140295691 | MOUNTED ELECTRICAL RECEPTACLE - An electrical receptacle assembly is reconfigurable to provide any number of different styles or configurations of high or low voltage electrical receptacles and/or data outlets. The receptacle assembly includes a main body with an outlet receptacle portion, a flange portion extending outwardly from the main body, an upper frame member positioned generally above the flange portion, and a lower frame member positioned generally below the flange portion. A plurality of electrical contacts are positioned in the main body, and are configured to make electrical contact when the outlet receptacle portion receives an electrical or data plug associated with an electrical device. The upper and lower frame members are configured to interchangeably receive different main bodies with different outlet portions, and enable the different outlet portions to be mounted at a power center along a work surface or the like. | 2014-10-02 |
20140295692 | LATCH FOR CIRCULAR CONNECTOR - Apparatus and system for securing a mated connector pair with a latch. The latch is a unitary elongate body configured to receive the mated connector pair. The latch may include a spring member and an internal passageway configured to receive a miniature circular connector. The latch may include a wire retainer feature to secure the latch to a wire harness. | 2014-10-02 |
20140295693 | ELECTRICAL CONNECTOR - An electrical connector includes an insulative housing, a plurality of terminals retained in the insulative housing. The insulative housing has a receiving room and a mating part received in the receiving room, the mating part defines a mating hole and a pair of receiving grooves extending rearward on two lateral sides of the mating hole. The terminals include a detecting terminal received in the mating hole and a pair of power terminals received in the receiving grooves. The mating part further defines a pair of guiding surfaces on two sides of the mating hole and a pair of stiffening ribs on two sides of the receiving groove, which can reduce the mating force during the mating process and protect the mating part. | 2014-10-02 |
20140295694 | STRAIN-RELIEF/BENDING-PROTECTION APPARATUS - The invention relates to a strain relief/bending protection apparatus for a cable, in particular a high speed cable, connected to a plug connector, comprising a base section which can be fastened to a housing of the plug connector and a sleeve section projecting from the base section for surrounding the cable in a region disposed outside the housing, wherein the sleeve section continuously has a round cross-section and the cross-sectional area of the sleeve section reduces as the spacing from the base section increases. | 2014-10-02 |
20140295695 | Plug-in connector for data and/or telecommunications cable comprising several wires - The invention relates to a plug-in connector for a data and/or telecommunication cable comprising several wires with a contact carrier, comprising connection contacts for a plug-in connection and with connecting contacts, connected thereto in an electrically-conducting fashion, for the wires of the cable, and with an accepting screen. | 2014-10-02 |
20140295696 | ELECTRICAL CONNECTOR - An electrical connector includes an insulative housing having a pair of docking ports for receiving plug connectors, an insulative housing having the docking ports, a pair of contact modules mounted in the housing, and a shielding wafer. Each of the contact modules includes an insulative carrier, an inner printed circuit board mounted on the insulative carrier, a number of mating contacts extending from the inner printed circuit board into one of the docking ports and a number of mounting contacts connecting the inner printed circuit board with an exterior substrate, each of the insulative carriers defining a gap at a side proximal to an insulative carrier. The shielding wafer downwardly extending beyond the inner printed circuit board and fully shielding the contact modules, the shielding wafer is soldered at the gaps to the inner printed boards. | 2014-10-02 |
20140295697 | CONNECTOR FOR MULTI-LAYERED BOARD - A connector for a multilayered board to connect a flat cable to a middle layer of a multilayered board while minimizing the impact due to variations in the dimensional precision and strength of multilayered boards and/or preventing deformation of the multilayered board and improving contact stability. The connector includes a board-side connecting portion and a cable-side connecting portion. The board-side connecting portion includes a column-shaped terminal, and the cable-side connecting portion includes flat terminals. The column-shaped terminal protrudes from the middle layer of the multilayered board in the thickness direction. The flat terminals include resilient contact portions, contacting a side surface portion of the column-shaped terminal from the width direction of the insertion slot in response to insertion of the cable-side connecting portion into the insertion slot. | 2014-10-02 |
20140295698 | PORTABLE UNIVERSAL SERIAL BUS (USB) CABLE KEYCHAIN ASSEMBLY WITH CARABINER CLIP - A cable assembly for connecting a portable electronic device to a host device includes an upstream connector section comprising a upstream connector housing, an upstream connector secured to the upstream connector housing, and a downstream connector section comprising a downstream connector housing, a first downstream connector secured to the downstream connector housing, and a second downstream connector secured to the downstream connector housing. The cable assembly further includes a main body section having an attachment mechanism comprising a through hole formed in the main body, the through hole including on one side a carabiner clip comprising a spring-loaded hinged inwardly movable outer portion completing the through hole. | 2014-10-02 |
20140295699 | WATERPROOF STRUCTURE OF COMMUNICATION CONNECTOR - A waterproof structure of communication connector is disclosed, which comprises: a first frame; a first gasket and at least one second frame. The first frame is composed of a first connecting member and a second connecting member that are disposed opposite to each other, in which the first connecting member is configured with a first end in a manner that that it is formed with a first groove surrounding the first end. The first gasket is disposed receiving inside the first groove and is made of a waterproofing material. The second frame has a third connecting member that is formed with an accommodation space, in which the accommodation space is formed with an abutment surface. Moreover, the first connecting member is arranged extending into the second frame and connected to the third connecting member, while enabling the first gasket to be sandwiched between the first end and the abutment surface. | 2014-10-02 |
20140295700 | CABLE CONNECTOR COVER - A cable connector cover includes, in one embodiment, a unitary body. The unitary body has a plurality of portions. The portions have different diameters for receiving a cable connector and establishing one or more seals. | 2014-10-02 |
20140295701 | TUNER - A tuner comprises a frame that is provided with a through-hole and a connection portion to which a connector is connected. The connection portion includes a flange portion that is able to select to pass through the through-hole or not to pass through the through-hole by the connection portion being rotated, and the frame includes a pressurization portion that pressurizes the flange portion which passes through the through-hole. | 2014-10-02 |
20140295702 | INTERMEDIATE CONNECTION ELECTRICAL CONNECTOR - An intermediate connection electrical connector includes a plurality of blades and a supporting member for supporting the blades arranged in an arrangement direction. The supporting member includes a surrounding wall portion for surrounding the blades and a regulating portion for positioning the blades. The surrounding wall portion includes a side wall portion and an edge wall portion. The side wall portion is at least partially formed of an electromagnetic wave absorbing material. The regulating portion is disposed inside the surrounding wall portion to define a blade accommodating space for accommodating the blades. | 2014-10-02 |
20140295703 | STRUCTURE FOR FIXING ELECTRICAL CONNECTION SECTION, CONNECTOR, AND METHOD FOR CONNECTING CONNECTOR - A structure for fixing the electrical connection section which connects and fixes an electrical connection section of a shielded electric wire to an electrical connection section of a shield housing, includes an electrically insulative annular member which is provided slidably along the outer peripheral surface of the electrical connection section of the shielded electric wire, a conductive fixing member which the outer peripheral surface of the annular member is provided with and is fixed to the shield housing, and a shield member which covers the electric wire and is mechanically and electrically connected to the fixing member, wherein the shield member is bent with the slide of the annular member. | 2014-10-02 |
20140295704 | EMI Finger - An integrated connector may be provided. The integrated connector may comprise a top portion, a front portion, and a side portion. The top portion may comprise a plurality of top fingers. The front portion may comprise a plurality of receptacles and a plurality of receptacle tabs respectively corresponding to the plurality of receptacles. The side portion may comprise at least one side finger comprising a main portion, a connector portion connected to the side portion, a tail portion, a top curved portion, and a bottom curved portion. The top fingers, the plurality of receptacle tabs, and the at least one side finger may be in electrical connection. | 2014-10-02 |
20140295705 | CROSSTALK-PROOF RECEPTACLE CONNECTOR - A crosstalk-proof receptacle connector has multiple insulative boards, multiple sets of terminals, multiple sets of shielding plates and an outer casing. The insulative boards are arranged abreast. The sets of the terminals are mounted respectively in the insulative boards. The terminals of each set are classified into signal terminals and grounding terminals. Each set of the shielding plates is mounted on one of two opposite sides of a corresponding insulative board. The shielding plates of each set are spaced apart without contacting one another. Each shielding plate has multiple folding sections capable of interrupting signal noise. The outer casing covers the insulative boards to combine the insulative boards. The sets of the shielding plates decrease signal interference of the receptacle connector and improve signal transmission efficiency and stability. | 2014-10-02 |
20140295706 | PLUG CONNECTOR WITH SHIELDING - A plug connector featuring shielding of the signal contacts that are arranged in a contact pattern of differential pairs and that form a contact group together with a shielding element surrounding same. The contact groups are arranged in rows and columns. Each shielding contact includes a shielding element and at least one shielding contact element. Each signal contact includes a blade element and a signal contact element. All shielding contact elements within a row are aligned in a straight line. Each of the signal contact elements of each differential pair are aligned in a straight line that forms a 45° angle with the straight line of the shielding contact elements within the row. An arrangement can be made from two such plug connectors and a circuit board, wherein the two plug connectors are rotated 90° relative to each other. | 2014-10-02 |
20140295707 | Electrical Connector Structure - The present invention relates to an electrical connector structure, wherein the electrical connector structure according to the present invention includes: a housing, a plurality of electrical modules, and a plurality of LED modules, and the plurality of electrical modules and the plurality of LED modules are disposed in the housing. Moreover, the primary objective of the present invention is to provide an electrical connector structure, which reduces the difficulty of assembling and manufacturing costs for an electrical connector by improving the structure inside the electrical connector; moreover, the present invention increases the production efficiency and the safety of the product so as to improve the assembly quality and the process of production. | 2014-10-02 |
20140295708 | CONNECTOR - A connector includes female terminals ( | 2014-10-02 |
20140295709 | CONNECTOR - A connector includes a plurality of metal terminal fittings connected to terminals of electric wires, a plurality of molded housings molded to connection parts of the electric wires and the metal terminal fittings to cover the connection parts, and an overmolded housing which accommodates and holds the plurality of molded housings. The plurality of molded housings are molded in a structure integrated by carrier portions that connect the adjacent molded housings to each other and are collectively integrated into the overmolded housing. The carrier portions have cross-section dimensions set to be smaller than those of the molded housing and have flexibility. An arrangement pitch between the adjacent molded housings are adjusted when the plurality of molded housings are collectively integrated into the overmolded housing. | 2014-10-02 |
20140295710 | FEMALE CONNECTOR - A female connector 1 includes a plurality of contactors 3, a holding body 5, a body 61, and a holder 62. Plurality of contactors 3 are connected to a plurality of electric wires 20 of a cable 2, respectively. Holding body 5 is designed to hold the plurality of contactors 3. Body 61 has a housing recess 610 designed to house the plurality of contactors 3 and holding body 5. Holder 62 is designed to prevent holding body 5 from falling from housing recess 610 by coupling to body 61. Female connector 1 includes a cover 63 formed by double molding so as to cover holder 62 in a state where cable 2 is inserted into holder 62 and where holder 62 and body 61 are coupled to each other. Holder 62 is designed to be in close contact with cable 2 along a whole circumference thereof. | 2014-10-02 |
20140295711 | CONNECTOR - A compression connector includes a housing and a plurality of contacts located within the housing. Each of the plurality of contacts is configured to bend at a plurality of locations when pressure is applied to the contact. In addition, each of the plurality of contacts is configured to tuck within itself when pressure is applied to the contact. Furthermore, each of the plurality of contacts is constrained by the housing. | 2014-10-02 |
20140295712 | ELECTRICAL CONNECTOR - An electrical connector has an insulative housing, a plurality of contacts retained in the insulative housing and a shell assembled to the insulative housing. The insulative housing has a mating face and a mating chamber depressing from the mating face and extending through the insulative housing along a front to back direction for receiving a mating plug. The contacts comprise a first contact with a first engaging point located in a left side of the mating chamber, and a second contact with a second engaging point located in a bottom side of the mating chamber and a third contact with a third engaging point located in a right side of the mating chamber and opposite to the first contacting portion, the third engaging point is located between the first engaging point and the second connecting portion along the front to back direction. | 2014-10-02 |
20140295713 | Electrical Connector With Multiple Contact Array Materials - A telecommunications jack, and a method of manufacturing such a jack, are disclosed. In one aspect, the jack includes a housing having a socket sized to receive either a first telecommunications plug of a first type or a second telecommunications plug of a second type having a different arrangement of electrical contacts as compared to the first telecommunications plug. The telecommunications jack also includes a plurality of contact springs exposed within the socket and positioned for alignment with electrical contacts of the first telecommunications plug when the first telecommunications plug is inserted into the socket. At least one of the contact springs remains unaligned with any of the electrical contacts of the second telecommunications plug when the second telecommunications plug is inserted into the socket, and is a resilient conductive material, At least one other contact spring of the plurality of contact springs are a second material having a lower resiliency than the at least one of the contact springs. | 2014-10-02 |
20140295714 | POWER PLUG - A power plug comprising a housing with a plurality of receptacles and extending along a receptacle axis parallel to the mating direction. Each receptacle has a central part and a front part with an opening to receive a male terminal of the complementary electrical socket. The power plug comprises a plurality of female terminals passing through the housing in parallel to the mating direction. Each female terminal includes a central part located in the central part of the receptacle, and a front part projecting from the central part in the mating direction and receiving a male terminal. The receptacle includes a plurality of ribs arranged radially on an inner side of the receptacle and protruding transversely inward. The ribs of the receptacle cooperate with the front part of the corresponding female terminal to center the front part of the corresponding female terminal with respect to the receptacle axis. | 2014-10-02 |
20140295715 | CONTACT MEMBER AND MANUFACTURING METHOD OF SENSOR - A contact fitting has a supporting portion capable of contacting a surface of a sensor element, and a conducting portion protruding in the same direction as the supporting portion and capable of contacting an electrode on the sensor element. Before the contact fitting is attached to the sensor element, a protrusion height of the conducting portion is 90% to 110% of a protrusion height of the supporting portion, and the protrusion heights and are relatively close to each other. The supporting portion and the conducting portion are elastically deformable and are curved in shape. The supporting portion and the conducting portion are arranged along a longitudinal direction of the contact fitting. | 2014-10-02 |
20140295716 | TERMINAL AND METHOD OF FORMING CAP OF TERMINAL - Disclosed are a terminal allowing work for attaching the cap to the insertion part to eliminate, and to provide in a short time the cap to the insertion part, and a method of forming the cap of the terminal. In a terminal, at a tip end of a tubular insertion part a resin made cap is provided, the insertion part includes an annular portion with narrower diameter than that the insertion part at a tip end thereof, the cap is disposed at the insertion part by a dipping work covering the annular portion in an inner side away from a tip end of the insertion part past the annular portion. | 2014-10-02 |
20140295717 | OUTBOARD MOTOR CONTROL APPARATUS - In an apparatus for controlling an outboard motor adapted to be mounted on a hull of a boat and equipped with an internal combustion engine to power a propeller and a trim angle regulating mechanism adapted to regulate a trim angle relative to the hull, comprising: a throttle opening change amount calculator that calculates a throttle opening change amount of the engine; an accelerating state determiner that determines whether the boat is in an accelerating state based on the calculated throttle opening change amount; and a trim angle controller that controls operation of the trim angle regulating mechanism to increase the trim angle based on an operating parameter that indicates a state of the engine and the propeller when the accelerating state determiner determines that the boat is in the accelerating state. | 2014-10-02 |
20140295718 | Apparatus and Method for the Control of Engine Throttle for Inboard and Outboard Boat Motors - A ski boat throttle control system incorporating a rotary assembly such as a thumbwheel within the control lever knob which is part of the control lever assembly that is gripped and held by the operator of the boat during use. The incorporation of such a thumbwheel assembly allows the operator to make more controlled adjustment to the speed of the boat when the boat is in normal operational mode and to intuitively make adjustments to the cruise control speed of the boat when in cruise control. | 2014-10-02 |
20140295719 | TRIM AND TILT APPARATUS FOR MARINE VESSEL PROPULSION MACHINE - A trim and tilt apparatus for a marine vessel propulsion machine includes: a cylinder having a cylinder chamber; a piston rod that is telescopically inserted into the cylinder chamber; and a hydraulic oil supply and discharge device that supplies and discharges hydraulic oil to and from the cylinder chamber, the trim and tilt apparatus allowing the marine vessel propulsion machine to perform a trim operation and a tilt operation, and the hydraulic oil supply and discharge device includes: a plurality of discharge units for simultaneously discharging the hydraulic oil; and a switching unit for switching between a case where the cylinder chamber is supplied with the hydraulic oil discharged by a part of the plurality of discharge units, and a case where the cylinder chamber is not supplied with the hydraulic oil discharged by the part of the plurality of discharge units. | 2014-10-02 |
20140295720 | COLLAPSIBLE FLOATATION SYSTEM - Various embodiments and aspects of the disclosed application relates to a rescue device that can be used to assist in rescue of a person or other entity from a body of water. The rescue device comprises a floatation mechanism, a delivery mechanism, and a retrieval mechanism. The rescue device comprises a length of rope having a looped end of rope on which are located one or more floatation component(s), a weight to facilitate delivery of the components comprising the delivery device, and the length of rope facilitates retrieval of the rescue device. | 2014-10-02 |
20140295721 | PATIENT TRANSPORTER WITH SPONSONS - A patient transporter having sponsons that provide buoyancy when deployed on water is provided. A sponson assembly formed by two sponsons connected to each other by a material, and which can be positioned beneath a patient transporter to provide buoyancy, is also provided. | 2014-10-02 |
20140295722 | Lightweight Polymer Concrete Composition - A lightweight foamed polymer concrete admixture for use in fabricating building components, the polymer concrete comprising a mixture of a polyol, an isocyanate, an aggregate, and water, wherein once mixed, the mixture releases carbon dioxide gas creating a foamed mixture that may be shaped to form a building component such as, but not limited to, lap siding, shake siding, trim boards, stone and stucco sheeting. | 2014-10-02 |
20140295723 | NANOSILICA CONTAINING BISMALEIMIDE COMPOSITIONS - There are provided curable resin sols comprising an essentially volatile-free, colloidal dispersion of substantially spherical nanosilica particles in a curable bisimide resin, said particles having surface-bonded organic groups which render said particles compatible with said curable bisimide resin. There are also provided compositions comprising such curable resin sol and reinforcing fibers, a process for preparing such compositions, and various articles made using such curable resin sols and compositions. | 2014-10-02 |
20140295724 | NON-FLUORINATED URETHANE BASED COATINGS - A compound for imparting water repellency and optionally stain release to substrates wherein the compound is prepared by (i) reacting (a) at least one isocyanate group-containing compound selected from isocyanate, diisocyanate, polyisocyanate, or mixture thereof, and (b) at least one isocyanate-reactive compound selected from formula (Ia), (Ib), or (Ic): | 2014-10-02 |
20140295725 | COMPOSITE PROFILE AND METHOD FOR MANUFACTURING A COMPOSITE PROFILE - A composite profile comprises: a foam core ( | 2014-10-02 |
20140295726 | COUPLED FIBERS IN COMPOSITE ARTICLES - A composite structure may include a plurality of fibers at least partially embedded within a matrix. The fibers may be connected to one another at a at least one connection site. | 2014-10-02 |
20140295727 | LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF - In a liquid crystal display, a pretilt value provided by an upper alignment layer or a lower alignment layer is gradually changed in one domain, such that liquid crystal molecules have various arrangements in which azimuth angles of aligned liquid crystal molecules are gradually changed. | 2014-10-02 |
20140295728 | Balloon Inflation, Illumination and Holding Device - A device for inflating, illuminating and holding a balloon like a torch, without the use of helium. The device includes illumination means, a power supply and related circuitry, a pathway for inflating and sealing the balloon, an elongate handle, and a cap. The device further includes a switch with a trigger mechanism positioned so that the illumination means or lighting mode can be activated by the user. The device is also configured to meet child safety regulations and requirements. | 2014-10-02 |