40th week of 2017 patent applcation highlights part 71 |
Patent application number | Title | Published |
20170287631 | MANUFACTURING METHOD OF MAGNETIC ELEMENT - A manufacturing method of a magnetic element includes the following steps: forming a block including a central post and at least one lateral post with magneto-conductive materials; cutting the block along a first plane passing through the central and lateral posts to form a first half body and a second half body; combining the first half body with the second half body to form a first air gap between the central post of the first half body and the central post of the second half body and a second air gap between the lateral post of the first half body and the lateral post of the second half body; and cutting or grinding the combined first half body and second half body along a second plane passing through the central post and the lateral post to form a third half body including the first and second air gaps. | 2017-10-05 |
20170287632 | RADIALLY ANISOTROPIC SINTERED RING MAGNET AND ITS PRODUCTION METHOD - A method for producing a radially anisotropic sintered ring magnet by continuously repeating a step of supplying magnetic powder to a die comprising a columnar magnetic core, and a cylindrical outer die having axially connected magnetic member and non-magnetic member, with a cavity between the core and the cylindrical outer die, and a step of compression-molding the magnetic powder in a radial magnetic field applied between the magnetic core and the magnetic member of the outer die, plural times in one die, to form a final green body composed of pluralities of integrally connected green bodies; and sintering the final green body; the magnetic field being applied in a state where an upper end of the magnetic member of the cylindrical outer die is higher than an upper surface of the magnetic powder supplied. | 2017-10-05 |
20170287633 | Passive components for electronic circuits using conformal deposition on a scaffold - Precision fabrication of 3D objects is used for fabricating passive electrical components. A 3D scaffold is fabricated and then electrically conductive and/or insulating layers are deposited on the scaffold to form the electrical component. | 2017-10-05 |
20170287634 | ELECTRONIC COMPONENT, INDUCTOR CORE MEMBER, AND INDUCTOR - An electronic component including a body portion and an electrode disposed on the body portion is provided. The electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer contains silver (Ag) as a main component and includes first dispersion portions containing glass as a main component and second dispersion portions containing nickel as a main component. The second metal layer is disposed on the first metal layer and contains nickel (Ni) as a main component. The third metal layer is disposed on the second metal layer and contains tin (Sn) as a main component. An area of the first dispersion portions is larger than an area of the second dispersion portions in a sectional view of the electrode. | 2017-10-05 |
20170287635 | DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR - A dielectric ceramic composition having good characteristic even under high electric field intensity, and particularly good IR characteristic and high temperature accelerated lifetime. The present invention is a dielectric ceramic composition comprising,
| 2017-10-05 |
20170287636 | DIELECTRIC CERAMIC COMPOSITION AND MULTILAYER CERAMIC CAPACITOR - A dielectric ceramic composition has good characteristics even under the high electric field intensity, and particularly good IR characteristic and the high temperature accelerated lifetime. The dielectric ceramic composition has a main component having a perovskite type compound shown by a compositional formula (Ba | 2017-10-05 |
20170287637 | ELECTRO-POLARIZABLE COMPOUND AND CAPACITOR - An electro-polarizable compound has the following general formula: | 2017-10-05 |
20170287638 | ELECTRO-POLARIZABLE COMPOUND AND CAPACITOR - An electro-polarizable compound has the following general formula: | 2017-10-05 |
20170287639 | CERAMIC COMPOSITION AND MULTILAYER CAPACITOR HAVING THE SAME - A ceramic composition includes a ceramic powder and a phosphor (P). The phosphor (P) has a content of 1 to 2 wt %, based on a total weight of the ceramic powder not including the phosphor (P). | 2017-10-05 |
20170287640 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - A multilayer ceramic electronic component includes: a ceramic body including dielectric layers and internal electrodes; and external electrodes disposed on external surfaces of the ceramic body, wherein the external electrodes include seed layers disposed on at least one surface of the ceramic body in a thickness direction, first electrode layers electrically connected to the internal electrodes and the seed layers, and plating layers disposed on the seed layers and the first electrode layers, respectively, and 0.8≦T2/T1≦1.2, where T1 is a thickness of each of the first electrode layers in a central region of the ceramic body in the thickness direction, and T2 is a thickness of each of the first electrode layers at a point at which an outermost internal electrode, among the internal electrodes, is positioned. | 2017-10-05 |
20170287641 | MULTILAYER CAPACITOR - A multilayer capacitor includes a dielectric main body having opposite first and second sides, a terminal electrode assembly and spaced apart first, second and third inner electrodes, all of which are disposed in the main body. The second inner electrode is disposed between the first and third inner electrodes. The terminal electrode assembly has a first terminal electrode unit disposed on the first side and connected to the first inner electrode, a second terminal electrode unit disposed on the second side and connected to the second inner electrode, and a third terminal electrode unit disposed on the first side and connected to the third inner electrode. The first, second and third terminal electrode units are insulated from each other. | 2017-10-05 |
20170287642 | MULTI-LAYER CERAMIC ELECTRONIC COMPONENT AND METHOD OF PRODUCING THE SAME - A multi-layer ceramic capacitor, including a multi-layer including internal electrodes and dielectric layers alternately laminated, the internal electrodes having ends protruding beyond the dielectric layers in surface directions thereof; and side protective layers configured of a dielectric and disposed to cover side faces of the multi-layer, the side protective layers each having spacing sections formed between the ends of the internal electrodes. | 2017-10-05 |
20170287643 | Method of Producing Multi-Layer Ceramic Electronic Component and Multi-Layer Ceramic Electronic Component - A method of producing a multi-layer ceramic electronic component includes: preparing a multi-layer chip including ceramic layers laminated in a first axis direction, internal electrodes disposed between the ceramic layers, and a side surface on which the internal electrodes are exposed; applying a ceramic paste to the side surface; and pressing the applied ceramic paste toward the side surface to planarize the applied ceramic paste. | 2017-10-05 |
20170287644 | CERAMIC ELECTRONIC COMPONENT - A ceramic electronic component includes a laminated body including ceramic layers and conductor layers stacked alternately; and first and second external electrodes provided on portions of the laminated body. Each of the first and second external electrodes includes a sintered metal layer provided on the laminated body, a conductive resin layer covering the sintered metal layer, and a plated layer covering the conductive resin layer. The maximum length of the sintered metal layer provided on the second principal surface is shorter than the maximum length of the sintered metal layer provided on each of the first and second side surfaces. | 2017-10-05 |
20170287645 | ELECTRONIC COMPONENT - An electronic device includes a plurality of chip components and an external terminal. The chip components are provided with a terminal electrode formed on an end surface of a ceramic element body. The external terminal is electrically connected with the terminal electrodes to support the plurality of chip components adjacently in a first direction. The external terminal includes a terminal electrode connection part arranged to face the terminal electrode and a mounting connection part connectable with a mounting surface. The terminal electrode connection part is provided with a plurality of convex portions protruding toward the terminal electrode. At least one of the plurality of convex portions is respectively connected with each terminal electrode of the plurality of chip components. | 2017-10-05 |
20170287646 | CONTROL-ELECTRODE SHIELDING FOR IMPROVED LINEARITY OF A MEMS DVC DEVICE - The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated. | 2017-10-05 |
20170287647 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor that includes a capacitor element having a linear through conductor made of a valve function metal, a dielectric layer disposed on the through conductor, and a cathode-side functional layer disposed on the dielectric layer. The through conductor includes a core portion and a porous portion covering a peripheral surface of the core portion. Both end faces of the core portion of the through conductor are in contact with a pair of anode terminals on the pair of end faces of the body, respectively. A cathode terminal is electrically connected to the cathode-side functional layer. | 2017-10-05 |
20170287648 | LARGE-AREA PEROVSKITE FILM AND PEROVSKITE SOLAR CELL OR MODULE AND FABRICATION METHOD THEREOF - A method of fabricating a large-area perovskite film includes steps of: providing a precursor solution on a conductive substrate to form a film, wherein the perovskite is represented by a formula of ABX | 2017-10-05 |
20170287649 | PEROVSKITE SOLAR CELL HAVING HIGH HEAT RESISTANCE - Provided is a perovskite solar cell having remarkably excellent heat resistance, durability, and photoelectric conversion efficiency by employing a phthalocyanine derivative as a hole transport material. | 2017-10-05 |
20170287650 | DIRECT GROWTH OF POLYANILINE NANOTUBES ON CARBON CLOTH FOR FLEXIBLE AND HIGH-PERFORMANCE SUPERCAPACITORS - The present disclosure further provides an exemplary energy storage device fabricated from rectangular-tube polyaniline (PANI) that is chemically synthesized by a simple and convenient method. The rectangular-tube PANI, as an active material, is synthesized on a functionalized carbon cloth (FCC) as a substrate, and the obtained composite is immobilized on a stainless steel mesh as a current collector. The present disclosure additionally presents a facile technique for the direct synthesis of PANI nanotubes, with rectangular pores, on chemically activated CC. | 2017-10-05 |
20170287651 | CAPACITOR AND CAPACITOR MODULE - An object of the present invention is to provide a capacitor and a capacitor module having a long life and capable of a stable action. Therefore, an electrolytic solution L obtained by dissolving an electrolyte salt having a lower hydrolyzability and a higher reaction potential in an electrode than an amidine salt containing a cation which is an imidazolium in a solvent and a sub solvent that reduces resistance of the electrolytic solution is packed in a cell. The electrolyte salt is a quaternary ammonium salt, the solvent is propylene carbonate, and the sub solvent is dimethyl carbonate. The quaternary ammonium salt is triethylmethylammonium tetrafluoroborate or azacyclobutane-1-spiro-1′-azacyclobutyl tetrafluoroborate. A pressure regulating valve | 2017-10-05 |
20170287652 | SWITCHING DEVICE WITH A MODULAR AUXILIARY SWITCHING UNIT - A switching device includes a base module equipped with an electromagnetic drive that has a yoke, a coil and an armature arranged movably relative to the yoke, and that has a switching contact that includes a stationary switching piece and a movable switching piece arranged opposite the stationary switching piece, wherein the switching contact is switchable between an “open” position and a “closed” position via movement of the armature, where the switching device also includes a modular auxiliary switching unit equipped with a contact system that consists of a stationary switching piece and a movable switching piece arranged opposite the stationary switching piece such that the coupling between the base module and the modular auxiliary switching unit is configured such that different distances in the contact system of the auxiliary switching unit are transferrable during a trigger event via an elastic element regardless of the auxiliary switching unit in use. | 2017-10-05 |
20170287653 | High-Visibility Status Indicator - A visual status indicator for an electrical apparatus is disclosed. The status indicator can be mounted within a lower cover of the electrical apparatus such that various display faces of the indicator are visible through one or more viewing windows of the lower cover. The status indicator can comprise a mounting base with protrusions and at least one wing, wherein the wing comprises at least one display face. At least one swing arm can be attached to the mounting base via the protrusions and the at least one swing arm can comprise at least one display face. The swing arm can be actuated such that either the display face on the wing or the display face on the swing arm is visible through the viewing window to indicate the status of the electrical apparatus. | 2017-10-05 |
20170287654 | BREAKER MOTORIZED SECONDARY CONNECTOR - FIELD INSTALLABLE KIT - A circuit breaker installation including a frame assembly and a circuit breaker assembly is provided. The frame assembly includes a conductor assembly and the frame assembly defines an enclosed space. The frame assembly conductor assembly includes a primary contact assembly and a movable secondary contact assembly. The circuit breaker assembly is movably disposed in the frame assembly enclosed space. The contact assemblies are configurable electrical components. The configurable electrical components move between a connect configuration, a test configuration, and, a disconnect configuration. | 2017-10-05 |
20170287655 | POWER SWITCHING APPARATUS - A power switching apparatus includes a detection circuit, a control circuit and an auxiliary power circuit. The detection circuit comprises a voltage adjusting unit, a delay unit, a first switch unit and an isolation unit. The auxiliary power circuit comprises an auxiliary power input side and an output side. When a main power supplies power normally or the main power stops supplying power but the delay unit continues working in a setting time, the first switch unit is turned on. The isolation unit sends a first signal to the control circuit. The auxiliary power input side does not conduct to the output side. When the main power stops supplying power and the delay unit stops working, the first switch unit is turned off. The isolation unit does not send the first signal to the control circuit. The auxiliary power input side conducts to the output side. | 2017-10-05 |
20170287656 | WATERPROOF BUTTON AND ELECTRONIC DEVICE USING SAME - A waterproof button for an electronic device includes a button portion and a waterproof portion. The button portion includes an operating portion, a connecting portion, and a pressing portion. The waterproof portion includes a positioning portion, a sleeve, and a receiving portion. The positioning portion defines a through hole to allow the connecting portion to pass through. The sleeve is connected to the positioning portion to receive the connecting portion, the receiving portion is connected to the sleeve to receive the pressing portion. A surface of the positioning portion forms a fixing surface. When the waterproof button is mounted to the electronic device, the fixing surface is fixed to the electronic device. An electronic device using the waterproof button is also described. | 2017-10-05 |
20170287657 | PUSH BUTTON SWITCH - A push button switch includes a housing made up of a base and a cover, a first plunger mounted on the cover so as to be pushed down, a movable contacting piece configured to be driven by a push-down operation on the first plunger, a movable contact provided in the movable contacting piece, and a fixed contact disposed so as to come into and out of contact with the movable contact. Specifically, the movable contacting piece includes a movable contact piece provided with the movable contact, and an operation tongue piece disposed on at least one side of the movable contact piece and coupled with the movable contact piece so as to rotate integrally. The operation tongue piece is operated by the operation body of the first plunger to bring the movable contact into and out of contact with the fixed contact. | 2017-10-05 |
20170287658 | Apparatus And Methods For Remote Control Of Input Devices - An apparatus includes communication circuit; an actuator electrically coupled with the communication circuit; and a switch engagement component mechanically coupled with the actuator. The apparatus is configured for mounting adjacent to a switch (e.g., a rocker switch, a toggle switch, a button switch, etc.). The communication circuit is configured to activate the actuator in response to one or more instructions received by the communication circuit. The actuator is configured to rotate the switch engagement component. Rotating the switch engagement component while the switch is in a first state places the switch in a second state that is distinct from the first state. | 2017-10-05 |
20170287659 | VACUUM INTERRUPTER FOR A VACUUM CIRCUIT BREAKER - A vacuum interrupter for a vacuum circuit breaker is disclosed, in which a center shield is arranged between an upper insulating envelope and a lower insulating envelope, whereby the center shield is not provided inside each of the insulating envelopes and thus outer diameters of the respective insulating envelopes are reduced. | 2017-10-05 |
20170287660 | VACUUM CIRCUIT INTERRUPTER - A vacuum interrupter assembly is provided. The vacuum interrupter assembly includes an operating mechanism, a vacuum chamber including a number of bellows assemblies, a conductor assembly including a first contact assembly and a second contact assembly, the first contact assembly including a stem and a contact member, the first contact assembly stem including an elongated body with a proximal first end, a medial portion, and a distal second end. The first contact assembly stem body has a reduced length. The first contact assembly stem body having a reduced length generates less heat and electrical resistance. | 2017-10-05 |
20170287661 | THREE-POSITION VACUUM SWITCH FOR REALIZING EXTERNAL GROUNDING OF LOAD SIDE BY USING BRIDGE SWITCH - A three-position vacuum switch for realizing external grounding of a load side by using a bridge switch overcomes the problems in the prior art that load side grounding is realized depending on the opening and closing of a vacuum arc extinguishing chamber, a misoperation easily occurs because an operator cannot see the grounding situation intuitively, and when an operating mechanism machine has a problem, it needs to have a grounding line plugged in externally, which cause inconvenient operations with huge safety risks, a complicated structure and relatively high cost, characterized in that a bridge grounding switch is provided on the other side of the three-position vacuum switch to realize external grounding of the load side via the bridge grounding switch. | 2017-10-05 |
20170287662 | INSULATING HOUSING WITH INTEGRATED FUNCTIONS AND MANUFACTURING METHOD THEREFOR - An insulating housing with integrated functions comprises a barrel-shaped shell, an interior wall of which being provided with a protruded or recessed uneven texture configured to increase a creepage distance between both axial ends of the barrel-shaped shell, the path of the creepage distance formed by the protruded or recessed uneven texture having more than two flyover or bypass sub-paths, such that the creepage distance is increased, and the voltage withstanding is increased. Meanwhile, by employing a construction of creepage-increasing rings, not only the creepage distance is increased greatly, but also the barrel-shaped shell is avoided from full-interior wall contamination by metal vapor evapotranspiration. Thus, under the double effects of a greater creepage distance and a greater proportion of uncontaminated area, the voltage withstanding and after arcing insulation level of the insulating housing with integrated functions are improved greatly, while the after arcing electric insulation level of the vacuum interrupter is not decreased, such that the insulating housing with integrated functions and the vacuum interrupter is developing towards high voltage and ultra-high voltage. | 2017-10-05 |
20170287663 | USE OF CONDUCTING FLUID IN PRINTED CIRCUITS - An apparatus for toggling circuits includes a plurality of parallel channels each having a first end and a second end, a plurality of ports transverse to the plurality of parallel channels, wherein each port has a plurality of valves corresponding to the plurality of parallel channels, wherein each valve selectively opens and closes in response to an input and wherein opening a valve fills a portion of a port with a conducting fluid. The apparatus also includes a controller communicatively coupled to the input of each valve and configured to complete an electric circuit between the first end of the parallel channel and the port corresponding to the valve when the controller opens the valve. A method executed by a computer and a corresponding computer program product are also disclosed herein. | 2017-10-05 |
20170287664 | THERMALLY ACTIVATED SWITCH - Thermal switch technology is disclosed. In one example, a thermally activated switch can include an electronic substrate base, and first and second electrical contacts coupled to the electronic substrate base. The first and second electrical contacts can be movable relative to one another due to thermal expansion or contraction of a material to facilitate contact or separation of the first and second electrical contacts. | 2017-10-05 |
20170287665 | BOOM MOUNTABLE BREAKER AND METHODS OF USING SAME - A boom mountable breaker system and a method of using same for interrupting electrical transmission through a portion of an energized conductor downstream of a desired break location. The method includes: mounting the jumper onto the energized conductor across the desired break location so as to form an electrically conductive first parallel electrical path; installing an in-line opener in the energized conductor at the desired break location on the energized conductor; positioning the breaker at the desired break location on the energized conductor, and electrically connecting the breaker, while open, across the desired break location and across the opposite ends of the jumper so as to form a second parallel electrical path when the breaker is closed; closing the breaker to thereby complete the second parallel electrical path; removing the jumper from across the desired break location; and, opening and then removing the breaker. | 2017-10-05 |
20170287666 | CIRCUIT BREAKER CHARACTERISTIC MONITORING DEVICE - A circuit breaker characteristic monitoring device monitors the operation of a circuit breaker to estimate the amount of consumption of a movable contact and fixed contacts included in the circuit breaker. The device includes an operating time measurement unit to measure at least one of closing time, which is the time required for the circuit breaker to be closed after starting a closing operation, and opening time, which is the time required for the circuit breaker to be open after starting an opening operation, and a contact consumption amount estimation unit to estimate the amount of consumption of the movable contact and the fixed contacts on the basis of the result of measurement performed by the operating time measurement unit and travel speed of the movable contact during the closing operation or the opening operation for which the measurement result is obtained. | 2017-10-05 |
20170287667 | BIMODE IMAGE ACQUISITION DEVICE WITH PHOTOCATHODE - Image acquisition device comprising a photocathode, converting an incident flux of photons into a flux of electrons, a sensor, and a processor. The device according to the invention comprises a matrix of elementary filters, each associated with at least one pixel of the sensor, the matrix being disposed upstream of the photocathode. The matrix comprises primary color filters, and transparent filters, termed panchromatic filters. The processor is configured to: calculate a quantity, termed a useful quantity ( | 2017-10-05 |
20170287668 | X-RAY GENERATING TUBE INCLUDING ELECTRON GUN, X-RAY GENERATING APPARATUS AND RADIOGRAPHY SYSTEM - Provided is an X-ray generating tube including an electron gun, which includes a grid electrode secured to a support member. In the X-ray generating tube, thermal stress generated at a joining portion between the support member and the grid electrode is reduced, to thereby maintain a position of an electron beam on a target irradiated with the electron beam accurately for a long time. A grid electrode and a support member are secured to each other via a buffer member, which has an elastic coefficient that is lower than elastic coefficients of the grid electrode and the support member, and which is joined to the grid electrode and the support member through a first joining portion on the grid electrode side and a second joining portion on the support member side, respectively. | 2017-10-05 |
20170287669 | FABRICATION METHODS AND MODAL STIFFINING FOR NON-FLAT SINGLE/MULTI-PIECE EMITTER - An electron emitter assembly includes a plurality of electron emitters, and a removable structure connected to, and fixing a positional relationship among, individual ones of the plurality of electron emitters. A method of assembling an electron emitter assembly includes connecting individual ones of a plurality of electron emitters together with a removable structure, and fixing a positional relationship among the individual ones of the plurality of electron emitters. | 2017-10-05 |
20170287670 | EMITTER AND X-RAY TUBE - According to one embodiment, an emitter comprise a base portion including an electron emission surface from which electrons are emitted, a pair of leg portions applying a voltage to the electron emission surface, and a rib portion formed by bending an edge of the base portion to a side opposite to the electron emission surface, on at least a part of an outline of the electron emission surface. | 2017-10-05 |
20170287671 | Angled Flat Emitter For High Power Cathode With Electrostatic Emission Control - In the present invention, a computed tomography system, an X-ray tube used therein and a cathode assembly disposed in the X-ray tube, as well as an associated method of use, is provided that includes a gantry and the X-ray tube coupled to the gantry. The X-ray tube includes the cathode assembly having a pair of emitters for generating an electron beam, where the pair of emitters are disposed in the casing at angles with respect to one another. The X-ray tube further includes a focusing electrode for focusing the electron beam, an extraction electrode which electrostatically controls the intensity of the electron beam, a target for generating X-rays when impinged upon by the electron beam and a magnetic focusing assembly located between the cathode assembly and the target for focusing the electron beam towards the target. | 2017-10-05 |
20170287672 | Asymmetric Core Quadrupole with Concave Pole Tips - A magnetic assembly for focusing an electron beam includes one or more quadrupole assemblies, each quadrupole assembly having at least a pair of separate opposing members with angular pole extensions of one opposing member facing angular pole extensions of another opposing member. An X-ray tube includes a magnetic assembly for focusing an electron beam extending from a cathode to an anode of the X-ray tube, the magnetic assembly comprising one or more quadrupole assemblies, each quadrupole assembly having at least a pair of opposing members with angular pole extensions of one opposing member facing angular pole extensions of another opposing member. | 2017-10-05 |
20170287673 | Shielded, Transmission-Target, X-Ray Tube - A transmission-target x-ray tube can include an x-ray window | 2017-10-05 |
20170287674 | PARTICLE-OPTICAL SYSTEMS AND ARRANGEMENTS AND PARTICLE-OPTICAL COMPONENTS FOR SUCH SYSTEMS AND ARRANGEMENTS - A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity. | 2017-10-05 |
20170287675 | Method and System for Charge Control for Imaging Floating Metal Structures on Non-Conducting Substrates - A scanning electron microscopy system is disclosed. The system includes a sample stage configured to secure a sample having conducting structures disposed on an insulating substrate. The system includes an electron-optical column including an electron source configured to generate a primary electron beam and a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The system includes a detector assembly configured to detect electrons emanating from the surface of the sample. The system includes a controller communicatively coupled to the detector assembly. The controller is configured to direct the electron-optical column and stage to perform, with the primary electron beam, an alternating series of image scans and flood scans of the portion of the sample, wherein each of the flood scans are performed sequential to one or more of the imaging scans. | 2017-10-05 |
20170287676 | METHOD FOR AUTOMATIC CORRECTION OF ASTIGMATISM - The method is for automatic astigmatism correction of a lens system. A first image of a first frequency spectrum in a microscope is provided. The first image of a view is not in focus. The first image is then imaged. A first roundness measure of a distribution and directions of intensities in the first image is determined. The lens is changed to a second stigmator setting to provide a second image of a second frequency spectrum. The second image of the view is not in focus. The second image is the same view as the first image of the view at the first stigmator setting. A second roundness measure of a distribution and directions of intensities in the second image is determined. The first roundness measure is compared with the second roundness measure. The image with the roundness measure indicating the roundest distribution is selected. | 2017-10-05 |
20170287677 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber, a rotation table installed in the processing chamber and configured to load a substrate on an upper surface of the rotation table along a circumferential direction of the rotation table, and a plasma generator including an antenna located above an upper surface of the processing chamber and installed to be able to move in a radial direction of the rotation table, wherein the plasma generator is configured to locally apply plasma to the rotation table in the radial direction. | 2017-10-05 |
20170287678 | HIGH TEMPERATURE ELECTROLYSIS GLOW DISCHARGE DEVICE - The present invention provides a glow discharge assembly that includes an electrically conductive cylindrical screen, a flange assembly, an electrode, an insulator and a non-conductive granular material. The electrically conductive cylindrical screen has an open end and a closed end. The flange assembly is attached to and electrically connected to the open end of the electrically conductive cylindrical screen. The flange assembly has a hole with a first diameter aligned with a longitudinal axis of the electrically conductive cylindrical screen. The electrode is aligned with the longitudinal axis of the electrically conductive cylindrical screen and extends through the hole of the flange assembly into the electrically conductive cylindrical screen. The insulator seals the hole of the flange assembly around the electrode and maintains a substantially equidistant gap between the electrically conductive cylindrical screen and the electrode. The non-conductive granular material is disposed within the substantially equidistant gap. | 2017-10-05 |
20170287679 | PLASMA GAS JETTING DEVICE - Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ports. In this case, since a layer of nitrogen gas is formed in the periphery of plasma gas, it is possible to make it difficult to bring the plasma gas into contact with air, and it is possible to make it difficult to react a reactive species such as a radical in the plasma gas, oxygen in the air, and the like. | 2017-10-05 |
20170287680 | Ceramic Layer for Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods - A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic layer. A primary radiofrequency (RF) power delivery electrode is positioned within the ceramic layer at a location vertically below the at least one clamp electrode such that a region of the ceramic layer between the primary RF power delivery electrode and the at least one clamp electrode is substantially free of other electrically conductive material. A plurality of RF power delivery connection modules is distributed in a substantially uniform manner about a perimeter of the ceramic layer. Each of the RF power delivery connection modules is configured to form an electrical connection from the base plate to the primary RF power delivery electrode at its respective location. | 2017-10-05 |
20170287681 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a substrate holder to vertically load a plurality of substrates in multiple stages with an interval therebetween and including a plurality of partition plates vertically partitioning a region where the plurality of substrates are loaded; a process chamber to receive the substrate holder therein; protrusions protruding inward toward the outer circumferential surfaces of the partition plates from an inner circumferential wall surface within the process chamber, which faces the outer circumferential surfaces of the partition plates, to form clearances between inner circumferential surfaces formed on the protruding tip ends of the protrusions and the outer circumferential surfaces of the partition plates; and a gas supply part to supply inert gas into the clearances, which are formed between the inner circumferential surfaces of the protrusions and the outer circumferential surfaces of the partition plates, to form positive-pressure sections subjected to a pressure higher than ambient pressure. | 2017-10-05 |
20170287682 | SYSTEMS AND METHODS FOR PERFORMING EDGE RING CHARACTERIZATION - A substrate support in a substrate processing system includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller. The controller at least one of lowers the edge ring to selectively cause the edge ring to engage the substrate and raises the inner portion to selectively cause the edge ring to engage the substrate. The controller determines when the edge ring engages the substrate and calculates at least one characteristic of the substrate processing system based on the determination of when the edge ring engages the substrate. | 2017-10-05 |
20170287683 | AEROSOL DEPOSITION COATING FOR SEMICONDUCTOR CHAMBER COMPONENTS - An component of a processing chamber comprises an aerosol deposited coating on the component, the aerosol deposited coating comprising a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle. | 2017-10-05 |
20170287684 | DETECTING AN ARC OCCURING DURING SUPPLYING POWER TO A PLASMA PROCESS - Methods, apparatus and systems for detecting an arc during supplying a plasma process in a plasma chamber with a power are provided. An example plasma power supply includes: a DC source, an output signal generator, a first signal sequence measurement device for measuring a first signal sequence present between the DC source and the output signal generator, a second signal sequence measurement device for measuring a second signal sequence present at an output of the output signal generator, and a controller configured to generate a reference signal sequence based on one of the first and second signal sequences, to compare the reference signal sequence and the other of the first and second signal sequences that has not been used to determine the reference signal sequence, and to generate a detection signal if the reference signal sequence and the other of the first and second signal sequences cross. | 2017-10-05 |
20170287685 | SPUTTERING TARGET ASSEMBLY HAVING A GRADED INTERLAYER AND METHODS OF MAKING - A sputtering target assembly includes a sputtering target having a rear surface, a backing plate having a front surface, and an interlayer disposed between the target and the backing plate. The interlayer includes a first interlayer portion disposed proximate the target material rear surface, and a second interlayer portion disposed proximate the backing plate front surface. The first interlayer portion is formed of a first mixture containing a first material and a second material and having a higher concentration of the first material than the second material, and the second interlayer portion is formed of a second mixture containing the first material and the second material and having a higher concentration of the second material than the first material. A method of making is also provided. | 2017-10-05 |
20170287686 | Multi-Channel Photomultiplier Tube Assembly - A multi-channel photomultiplier tube (PMT) detector assembly includes a photocathode. The detector assembly includes a first dynode channel including a first set of dynode pathways. The first set of dynode pathways include a plurality of dynode stages configured to receive a first portion of the photoelectrons and direct a first amplified photoelectron current onto a first anode. The detector assembly includes an additional dynode channel including an additional set of dynode pathways. The additional set of dynode pathways includes a plurality of dynode stages configured to receive an additional portion of the photoelectrons and direct an additional amplified photoelectron current onto an additional anode. The detector assembly includes a grid configured to direct the first portion of the photoelectrons to one or more of the first set of pathways and an additional portion of the photoelectrons to one or more of the additional set of pathways. | 2017-10-05 |
20170287687 | DATA INDEPENDENT ACQUISITION WITH VARIABLE MULTIPLEXING DEGREE - A method is disclosed for analyzing ions by mass spectrometry by repeatedly executing a data acquisition cycle to acquire product ion data across a precursor mass range of interest. The data acquisition cycle comprises performing, for each of a plurality of isolation windows having different mass ranges, steps of (i) isolating precursor ions within the mass range of the isolation window, (ii) fragmenting the isolated precursor ions to generate product ions, and (iii) mass analyzing the product ions. The step of mass analyzing the product ions includes concurrently mass analyzing product ions corresponding to N isolation windows, N being an integer greater than or equal to one, wherein N is changed at least once across the data acquisition cycle. | 2017-10-05 |
20170287688 | METHODS OF DETECTING REVERSE TRIIODOTHYRONINE BY MASS SPECTROMETRY - Provided are methods for determining the amount of reverse T3 in a sample using mass spectrometry. The methods generally involve ionizing reverse T3 in a sample and detecting and quantifying the amount of the ion to determine the amount of reverse T3 in the sample. | 2017-10-05 |
20170287689 | ION MANIPULATION DEVICE FOR GUIDING OR CONFINING IONS IN AN ION PROCESSING APPARATUS - An ion manipulation device for guiding or confining ions in an ion processing apparatus. The device has a first circuit board, wherein at least one first electrode for manipulating the path of ions is mounted on a mounting surface of the first circuit board; a second circuit board, wherein at least one second electrode for manipulating the path of ions is mounted on a mounting surface of the second circuit board; at least one bridging electrode for manipulating the path of ions, wherein the at least one bridging electrode is mounted to both the mounting surface of the first circuit board and the mounting surface of the second circuit board, wherein the bridging electrode is configured to hold the first circuit board and the second circuit board apart from each other in a fixed spatial relationship in which the mounting surface of the second circuit board faces towards the mounting surface of the first circuit board. | 2017-10-05 |
20170287690 | ION FOCUSING - The invention generally relates to apparatuses for focusing ions at or above ambient pressure and methods of use thereof. In certain embodiments, the invention provides an apparatus for focusing ions that includes an electrode having a cavity, at least one inlet within the electrode configured to operatively couple with an ionization source, such that discharge generated by the ionization source is injected into the cavity of the electrode, and an outlet. The cavity in the electrode is shaped such that upon application of voltage to the electrode, ions within the cavity are focused and directed to the outlet, which is positioned such that a proximal end of the outlet receives the focused ions and a distal end of the outlet is open to ambient pressure. | 2017-10-05 |
20170287691 | MASS SPECTROMETER - In a mass spectrometer according to the present invention, when MRM measurements for a plurality of MRM transitions need to be performed within one cycle, a measurement order rearranger determines an analysis sequence by sorting the measurement in ascending order of the absolute value of an optimum application voltage (an application voltage which gives the highest ionization efficiency) to the nozzle of the ESI probe. An analysis controller performs the analysis by controlling the high-voltage power source and other relevant units according to the determined analysis sequence. Since the voltage applied to the nozzle within one cycle has no period in which the voltage is changed in the decreasing direction with the same polarity, the cycle time becomes shorter than in a conventional device. | 2017-10-05 |
20170287692 | Combined Mass-to-Charge Ratio and Charge State Selection in Tandem Mass Spectrometry - A mass spectrometer is disclosed comprising an ion mobility spectrometer and an ion gate. A collision cell is arranged downstream of the ion gate. The operation of the ion mobility spectrometer and the ion gate are synchronized so that only ions having a particular mass to charge ration and a desired charge state are onwardly transmitted to the collision cell. | 2017-10-05 |
20170287693 | MONOLITHIC COLLIMATOR AND ENERGY ANALYZER FOR ION SPECTROMETRY - Disclosed are various examples related to ion or particle spectrometry utilizing a monolithic collimator and energy analyzer. In one example, a particle selection device includes a single substrate including a curved channel energy analyzer section and a straight channel collimator section, wherein particles pass through the collimator section and enter the energy analyzer section of the substrate. The channel outlets in the collimator section are aligned with the channel inlets of the energy analyzer section. Electric and/or magnetic fields can be applied across the channels of the energy analyzer for ion or particle discrimination. A particle detector at the outlet of the energy analyzer section can provide indications of detected ions and/or particles. | 2017-10-05 |
20170287694 | PHOTOLITHOGRAPHIC PATTERNING OF ELECTRONIC DEVICES - A method of patterning a device includes forming a fluorinated photopolymer layer over a device substrate. The photopolymer layer has a lower portion proximate the device substrate and an upper portion distal the device substrate. The fluorinated photopolymer layer includes a radiation-absorbing dye and a fluorinated photopolymer having a solubility-altering reactive group. The photopolymer layer is exposed to patterned radiation to form exposed and unexposed areas in accordance with the patterned radiation and a developed structure is formed by removing unexposed areas using a developing agent that includes a first fluorinated solvent. The lower portion of the exposed area of the photopolymer layer has a dissolution rate in the developing agent that is at least 5 times higher than a dissolution rate for the upper portion. | 2017-10-05 |
20170287695 | PHOTOCURABLE COMPOSITION, AND METHODS USING THE SAME FOR FORMING CURED PRODUCT PATTERN AND FOR MANUFACTURING OPTICAL COMPONENT, CIRCUIT BOARD AND IMPRINTING MOLD - A photocurable composition contains a polymerizable compound (A) satisfying O | 2017-10-05 |
20170287696 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping. | 2017-10-05 |
20170287697 | METHOD FOR MANUFACTURING AN SOI WAFER - A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step. | 2017-10-05 |
20170287698 | Patterned Layer Design for Group III Nitride Layer Growth - A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-Ill nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided. | 2017-10-05 |
20170287699 | SUBSTRATE PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM - Provided is a substrate processing apparatus that removes a film by supplying a processing liquid to the peripheral edge of a substrate. An ejection unit ejects the processing liquid to the peripheral edge of the substrate held and rotated by a substrate holding unit. An ejection position setting unit sets the ejection position of the processing liquid of the ejection unit to correspond to the removal width of the film included in a recipe, and a property information acquisition unit acquires property information of the film to be removed. A correction amount acquisition unit acquires the correction amount for correcting the ejection position of the processing liquid based on the property information of the film, and an ejection position correction unit corrects the ejection position of the processing liquid by the ejection unit based on the correction amount acquired by the correction amount acquisition unit. | 2017-10-05 |
20170287700 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus comprises: a liquid film former which forms a liquid film by supplying a liquid on an upper surface of the substrate W held horizontally; a cooling gas discharge nozzle which discharges cooling gas of a temperature lower than a freezing point of the liquid forming the liquid film to the liquid film; a thawing liquid discharge nozzle which discharges a thawing liquid to a frozen film formed by freezing the liquid film; a thawing liquid supplier which supplies the heated thawing liquid to the thawing liquid discharge nozzle via a pipe; and a receiver which receives the cooling gas and the thawing liquid respectively discharged from the cooling gas discharge nozzle and the thawing liquid discharge nozzle at the respective retracted position and guides the cooling gas and the thawing liquid to a common flow passage. | 2017-10-05 |
20170287701 | EPITAXIAL GROWTH APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - According to one embodiment, an epitaxial growth apparatus includes a processing chamber, an exhaust pipe, and an introducing pipe. The exhaust pipe is communicated with the processing chamber. The introducing pipe is communicated with the exhaust pipe and an alkaline gas is introduced into the exhaust pipe via the introducing pipe. | 2017-10-05 |
20170287702 | NANO-SCALE STRUCTURES - A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains. | 2017-10-05 |
20170287703 | SUBSTRATE PROCESSING APPARATUS AND PROCESSING METHOD OF SUBSTRATE PROCESSING APPARATUS - Imaging can be performed well even when an imaging device is disposed at a position facing a peripheral portion of a substrate. A substrate processing apparatus | 2017-10-05 |
20170287704 | SUBSTRATE PROCESSING APPARATUS, CONTROL METHOD OF SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM - Whether a film on a peripheral portion of a substrate is appropriately removed is rapidly determined without depending on a kind of the film on the peripheral portion to be removed. An acquisition process S | 2017-10-05 |
20170287705 | Method for Cleaning Wafer, and Chemical Used in Such Cleaning Method - Provided herein is a method for cleaning a wafer having a fine uneven surface pattern that at least partially contains a silicon element using a wafer cleaning device that includes a vinyl chloride resin as a liquid contacting member, the method including retaining a water-repellent protective film-forming chemical in at least a recessed portion of the uneven pattern to form a water-repellent protective film on a surface of the recessed portion, the water-repellent protective film-forming chemical containing:
| 2017-10-05 |
20170287706 | Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation - Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing. | 2017-10-05 |
20170287707 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining the coil and the circuit has a length of an integer multiple of a wavelength of an high-frequency power, and a table to mount the substrate under a lower end of the coil; mounting the substrate on the table; supplying the nitrogen-containing gas into the chamber; starting a plasma excitation of the nitrogen-containing gas by applying the high-frequency power to the coil; and nitriding a surface of the substrate with active species containing a nitrogen element at an internal pressure of the chamber ranging from 1 to 100 Pa. | 2017-10-05 |
20170287708 | IMPRINT RESIST AND SUBSTRATE PRETREATMENT FOR REDUCING FILL TIME IN NANOIMPRINT LITHOGRAPHY - Facilitating throughput in nanoimprint lithography processes by using an imprint resist including fluorinated components and a substrate treated with a pretreatment composition to promote spreading of an imprint resist on the substrate. The interfacial surface energy between the pretreatment composition and air exceeds the interfacial surface energy between the imprint resist and air by at least 1 mN/m, and the contact angle of the imprint resist on the surface of the nanoimprint lithography template is less than 15°. | 2017-10-05 |
20170287709 | Semiconductor Substrate with Stress Relief Regions - A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base substrate in second regions that are adjacent to the first region. A first semiconductor layer of a second semiconductor material is formed on a portion of the main surface that includes the first and second regions. A third region of the first semiconductor layer covers the first region of the base substrate, and a fourth region of the first semiconductor layer covers the second region of the base substrate. The third region has a crystalline structure that is disorganized relative to a crystalline structure of the fourth region. The first and second semiconductor materials have different coefficients of thermal expansion. | 2017-10-05 |
20170287710 | THERMAL ABSORPTION COATING ON SAPPHIRE FOR EPITAXIAL PROCESS - A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating. | 2017-10-05 |
20170287711 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In accordance with an embodiment of the present disclosure, a method of manufacturing a semiconductor device may include forming an opening passing-through a multi-layer stack, forming a channel layer on and along a sidewall of the opening, forming a conductive layer on and along a sidewall of the channel layer, and applying a laser to the conductive layer to transfer a heat from the conductive layer to the channel layer to heat-treat the channel layer using the heat. | 2017-10-05 |
20170287712 | PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE - A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity. | 2017-10-05 |
20170287713 | FORMING METHOD OF HARD MASK, FORMING APPARATUS OF HARD MASK AND RECORDING MEDIUM - A catalyst is imparted selectively to a plateable material portion | 2017-10-05 |
20170287714 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A method for manufacturing a semiconductor substrate that, even when a substrate which has, on a surface thereof, a three-dimensional structure having nanometer-scale microvoids on a surface thereof is used, can allow an impurity diffusion ingredient to be uniformly diffused into the substrate at the whole area thereof where the diffusion agent composition is coated, including the whole inner surfaces of the microvoids, while suppressing the occurrence of defects in the substrate. A coating film having a thickness of not more than 30 nm is formed on a surface of a substrate under such conditions that an atmosphere around the substrate has a relative humidity of not more than 40%, using a diffusion agent composition comprising an impurity diffusion ingredient and a Si compound that is hydrolyzable to produce a silanol group. | 2017-10-05 |
20170287715 | ALUMINUM OXIDE PASSIVATION FOR SOLAR CELLS - The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions and passivation layers using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions. | 2017-10-05 |
20170287716 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction. | 2017-10-05 |
20170287717 | ENGINEERED ETCHED INTERFACES FOR HIGH PERFORMANCE JUNCTIONS - Various methods for fabricating a semiconductor device by selective in-situ cleaning of a target surface of a semiconductor substrate by selective dry surface atomic layer etching of the target surface film, selectively removing one or more top layers of atoms from the target surface film of the semiconductor substrate. The selective in-situ cleaning of a target surface can be followed by deposition on the cleaned target surface such as to form a cap layer, a conductive contact layer, or a gate dielectric layer. | 2017-10-05 |
20170287718 | Method of Fabricating a Tunnel Oxide Layer and a Tunnel Oxide Layer for a Semiconductor Device - A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further oxide layer, reactive gases penetrate the first oxide layer and react with the silicon substrate to form at least a first portion of the at least one further oxide layer beneath the first oxide layer. | 2017-10-05 |
20170287719 | METHODS OF FORMING MEMORY CELLS WITH AIR GAPS AND OTHER LOW DIELECTRIC CONSTANT MATERIALS - Various embodiments include apparatuses and methods of forming the same. One such apparatus can include a first dielectric material and a second dielectric material, and a conductive material between the first dielectric material and the second dielectric material. A charge storage element, such as a floating gate or charge trap, is between the first dielectric material and the second dielectric material and adjacent to the conductive material. The charge storage element has a first surface and a second surface. The first and second surfaces are substantially separated from. the first dielectric material and the second dielectric material, respectively, by a first air gap and a second air gap. Additional apparatuses and methods are disclosed. | 2017-10-05 |
20170287720 | Methods to Prevent Whisker Growth in Metal Coatings - Whisker growth can be prevented in tin coatings by altering the tin film composition) or by modifying the tin/substrate interface. | 2017-10-05 |
20170287721 | ANODIC ETCHING OF SUBSTRATES - A bi-directional bipolar junction transistor (BJT) structure, comprising: a base region of a first conductivity type, wherein said base region constitutes a drift region of said structure; first and second collector/emitter (CE) regions, each of a second conductivity type adjacent opposite ends of said base region; wherein said base region is lightly doped relative to said collector/emitter regions; the structure further comprising: a base connection to said base region, wherein said base connection is within or adjacent to said first collector/emitter region. | 2017-10-05 |
20170287722 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MAINTENANCE METHOD OF DRY ETCHING EQUIPMENT - The manufacturing yield of a semiconductor product is attempted to improve by reducing a particle and stabilizing an etching characteristic after the maintenance of a processing chamber in a dry etching equipment. | 2017-10-05 |
20170287723 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion. | 2017-10-05 |
20170287724 | SELECTIVE SELF-ALIGNED PATTERNING OF SILICON GERMANIUM, GERMANIUM AND TYPE III/V MATERIALS USING A SULFUR-CONTAINING MASK - A method for patterning a substrate including multiple layers using a sulfur-based mask includes providing a substrate including a first layer and a second layer arranged on the first layer. The first layer includes a material selected from a group consisting of germanium, silicon germanium and type III/V materials. The method includes depositing a mask layer including sulfur species on sidewalls of the first layer and the second layer by exposing the substrate to a first wet chemistry. The method includes removing the mask layer on the sidewalls of the second layer while not completely removing the mask layer on the sidewalls of the first layer by exposing the substrate to a second wet chemistry. The method includes selectively etching the second layer relative to the first layer and the mask layer on the sidewalls of the first layer by exposing the substrate to a third wet chemistry. | 2017-10-05 |
20170287725 | Colloidal Silica Growth Inhibitor and Associated Method and System - A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces. | 2017-10-05 |
20170287726 | Process and Apparatus for Processing a Nitride Structure Without Silica Deposition - Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution. | 2017-10-05 |
20170287727 | METAL HARD MASK AND METHOD OF MANUFACTURING SAME - A metal hard mask for etching an etching target film that is present on a target object to be processed is formed of an amorphous alloy film that is formed by a thin film formation technique. It is preferable to use a physical vapor deposition method as the thin film formation technique, and sputtering is suitable for the use among physical vapor deposition methods. This metal hard mask is obtained by forming an amorphous alloy film on the etching target film by a thin film formation technique and patterning the amorphous alloy film. | 2017-10-05 |
20170287728 | METHODS FOR METALIZING VIAS WITHIN A SUBSTRATE - Methods of metalizing vias within a substrate are disclosed. In one embodiment, a method of metalizing vias includes disposing a substrate onto a growth substrate. The substrate includes a first surface, a second surface, and at least one via. The first surface or the second surface of the substrate directly contacts a surface of the growth substrate, and the surface of the growth substrate is electrically conductive. The method further includes applying an electrolyte to the substrate such that the electrolyte is disposed within the at least one via. The electrolyte includes metal ions of a metal to be deposited within the at least one via. The method also includes positioning an electrode within the electrolyte, and applying a current and/or a voltage between the electrode and the substrate, thereby reducing the metal ions into the metal on the surface of the growth substrate within the at least one via. | 2017-10-05 |
20170287729 | PROCESS FOR PACKAGING CIRCUIT COMPONENT HAVING COPPER CIRCUITS WITH SOLID ELECTRICAL AND THERMAL CONDUCTIVITIES AND CIRCUIT COMPONENT THEREOF - A method for packaging a circuit component, comprising: forming a first protruding pad on a first copper substrate and a through-hole in the first protruding pad; forming a second protruding pad on a second copper substrate and placing a circuit dice of the circuit component on the second protruding pad having a conductive paste coated thereon wherein a first electrode of the dice facing the second protruding pad; stacking the first copper substrate onto the second copper substrate with the first protruding pad having a conductive paste coated thereon aligned and pressing onto the circuit dice placed on the second protruding pad wherein a second electrode of the dice facing the first protruding pad; inserting a copper rod tightly into the through-hole until contacting with a conductive paste coated on the second substrate; heat-treating the stacked structure for the circuit dice and the copper rod to form secured electrical connection with the first and second copper substrates respectively and further forming a hermetic seal in the space between the first and second copper substrates; and using the hermetic seal as a rigid processing structure, etching the exposed surface of the first and second copper substrates to remove the entire thickness of copper other than in the area of the first and second protruding pads and in the area other than where the copper rod connects to the second copper substrate, thereby forming the device terminals of the circuit component package. | 2017-10-05 |
20170287730 | THERMOSONICALLY BONDED CONNECTION FOR FLIP CHIP PACKAGES - A method of making a package is disclosed. The method may include forming bond pads on a first surface of a substrate, forming leads in the substrate by etching recesses in a second surface of the substrate, the second surface being opposite the first surface, and plating at least a portion of a top surface of the leads with a layer of finish plating. The method may also include thermosonically bonding the leads to a die by thermosonically bonding the finish plating to the die and encapsulating the die and the leads in an encapsulant. | 2017-10-05 |