40th week of 2016 patent applcation highlights part 67 |
Patent application number | Title | Published |
20160293326 | INTEGRATED TUNABLE INDUCTORS - An integrated inductor can be tunable via a control current which alters the magnetic flux density in a permeable magnetic material. The resulting inductor can be adjusted in-circuit, and may be suitable for applications such as dc-dc converters, RF circuits, or filters requiring operation at high frequencies and across wide bandwidths. | 2016-10-06 |
20160293327 | MAGNETIC SHIELD - A magnetic shield for shielding adjacent coils of an ICPT system. One or more conductors are configured to distribute induced eddy currents from the surface of the shield to below the surface and thus reduce heating due to eddy currents. The magnetic shield may be employed to transfer power over rotary couplings, such as the shaft of a wind turbine. | 2016-10-06 |
20160293328 | MULTILAYER ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a multilayer electronic component comprises steps of: preparing first insulating sheets having internal electrode patterns formed thereon; moving one or more of the first insulating sheets having the internal electrode patterns formed thereon onto a lower mold; arranging a second insulating sheet to be disposed between an internal electrode pattern disposed in an uppermost position among the internal electrode patterns formed on the lower mold and an upper mold and pressing the first insulating sheets having the internal electrode patterns formed thereon by the upper mold to form a laminate; and sintering the laminate to form a multilayer body. In a cross section in a width-thickness direction of the internal electrode pattern included in the multilayer body, 0.45≦t | 2016-10-06 |
20160293329 | POWDER-FILLING SYSTEM - A powder-filling system capable of filling a container with powder at an approximately uniform filling density has: a hopper having an opening removably and hermetically closably attached to the container, the hopper communicating with the container at the opening for supplying powder to a container; a powder supplier for supplying powder to the hopper; a gas supplier for repeatedly supplying compressed gas in a pulsed form to the hopper, with the hopper hermetically closably attached to the container; and a sieve member provided at the opening and having a smaller openings in a region near a side wall of the hopper than in its central region. The smaller openings in the region near the side wall of the hopper where the powder more easily falls from the hopper into the container impedes the fall of the powder in that region and improves the overall uniformity in the filling density. | 2016-10-06 |
20160293330 | ELECTRONIC COMPONENT, METHOD OF MANUFACTURING THE SAME, AND MOUNT STRUCTURE OF ELECTRONIC COMPONENT - An electronic component includes a main body, first and second external electrodes, and a water-repellent film. The first and second external electrodes are provided on a portion of a surface of the main body. The water-repellent film is provided on another portion of the surface of the main body and on a surface of the first external electrode. The water-repellent film contains a non-cross-linked silicone resin. An angle of contact of water of about 25° C. with the water-repellent film is not less than about 100° and not greater than about 160°. | 2016-10-06 |
20160293331 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes an element body of roughly rectangular solid shape which is constituted by dielectric layers alternately stacked with internal electrode layers having different polarities, with a pair of cover layers formed on it to cover the top and bottom faces in the direction of lamination of the foregoing, and which has a pair of principal faces, a pair of end faces, and a pair of side faces, wherein external electrodes are formed on the pair of end faces and at least one of the pair of principal faces of the element body, and Tt representing the thickness of the external electrode and Tc representing the thickness of the cover layer satisfy the relationship of Tt≦Tc. The multilayer ceramic capacitor has large capacitance and also exhibits excellent thermal shock resistance while sufficiently suppressing generation of cracks. | 2016-10-06 |
20160293332 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes an element body which is constituted by dielectric layers stacked alternately with internal electrode layers having different polarities and whose shape is roughly a rectangular solid having a pair of principle faces, a pair of end faces, and a pair of side faces, wherein the multilayer ceramic capacitor is such that the pair of side faces of the element body has a pair of side margins whose thickness is 30 μm or less, and external electrodes are formed on the pair of end faces, and at least one of the pair of principle faces, of the element body. Despite the multilayer ceramic capacitor whose side margins are as thin as 30 μm or less, leak current can be suppressed. | 2016-10-06 |
20160293333 | MULTILAYER CERAMIC ELECTRONIC DEVICE - Provided is a multilayer ceramic electronic device which is capable of preventing decrease of the specific permittivity and of showing less drop of capacitance, even when the dielectric grains constituting the dielectric layers become smaller for thinning of the dielectric layers, wherein Dg/Di≧1 is satisfied, in case that “Di” is an average grain size of the first dielectric grains constituting the dielectric layer in the capacitance region and “Dg” is an average grain size of the second dielectric grains in an exterior area. | 2016-10-06 |
20160293334 | THIN FILM CAPACITOR - A lower electrode ( | 2016-10-06 |
20160293335 | CAPACITOR DEVICE AND COMPOSITE ELECTRONIC COMPONENT INCLUDING THE SAME - A composite electronic component includes a capacitor device and a resistance device which is disposed on the capacitor device and includes a resistor. The capacitor device includes a capacitor body and a first external electrode, a second external electrode, a third external electrode, and a fourth external electrode each provided on a surface of the capacitor body. The resistor is electrically connected to each of the third external electrode and the fourth external electrode. | 2016-10-06 |
20160293336 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an electronic device includes an underlying region, a variable capacitor including fixed electrodes and movable electrodes alternately arranged in a direction not perpendicular to a main surface of the underlying region, and a protective film which covers the variable capacitor and includes a conductive portion electrically connected to the fixed electrodes and having a hole. | 2016-10-06 |
20160293337 | SOLID ELECTROLYTIC CAPACITOR - The solid electrolytic capacitor according to the present invention is a solid electrolytic capacitor including a valve metal, an oxide film layer formed on a surface of the valve metal, and a solid electrolyte layer formed on the oxide film layer, wherein the solid electrolyte layer contains a conductive polymer and a gel of an organic solvent solidified with a chemical gelling agent. | 2016-10-06 |
20160293338 | CAPACITOR SEPARATOR AND CAPACITOR - A separator for a capacitor includes a porous film made of cellulose dissolved and regenerated without forming a cellulose derivative (A) and a fibrous component (B). The separator has excellent impedance characteristics and short-circuit resistance characteristics. The regenerated cellulose (A) can be obtained by forming in a film form a cellulose solution made by dissolving cellulose in an amine oxide solvent, immersing the resulting cellulose solution in water or a poor solvent of the amine oxide solvent so as to coagulate and regenerate the cellulose, washing the regenerated cellulose with water to remove the amine oxide solvent, and drying the resulting cellulose. Moreover, the fibrous component (B) can be one or more kinds of fibers selected from among a plant-based pulp, regenerated cellulose fiber, cellulose fiber, animal fiber, inorganic fiber, and synthetic fiber that are available as paper raw material. | 2016-10-06 |
20160293339 | Process to Improve Coverage and Electrical Performance of Solid Electrolytic Capacitors - A method for forming a capacitor, a capacitor formed thereby and an improved composition for a conductive coating are described. The method includes providing an anode, forming a dielectric on the anode and forming a cathode layer over the dielectric by applying a monoamine, a weak acid and a conductive polymer. | 2016-10-06 |
20160293340 | SILICON DIOXIDE SOLAR CELL - In order to increase the generation efficiency of a silicon dioxide solar cell, two conductive substrates are arranged so that the conductive surfaces thereof face each other, at least one of the substrates is disposed upon the substrate facing the light entry-side substrate, and an electrolyte is filled between the silicon dioxide particles compact and the light entry-side substrate. Silicon dioxide solar cells having this configuration exhibit a significantly increased short circuit current and open circuit voltage in comparison to solar cells in which the silicon dioxide and the electrolyte are mixed. This configuration can further be improved by disposing a titanium dioxide solar cell or a dye-sensitized titanium dioxide solar cell upon the light entry-side substrate to further increase the short circuit current and the open circuit voltage. | 2016-10-06 |
20160293341 | METHODS OF MAKING NON-COVALENTLY BONDED CARBON-TITANIA NANOCOMPOSITE THIN FILMS AND APPLICATIONS OF THE SAME - In one aspect of the invention, a dye sensitized solar cell has a counter-electrode including carbon-titania nanocomposite thin films made by forming a carbon-based ink; forming a titania (TiO | 2016-10-06 |
20160293342 | SOLAR CELL, MANUFACTURING METHOD THEREFOR, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR - Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer ( | 2016-10-06 |
20160293343 | SOLAR CELL AND METHODS OF FABRICATION AND USE THEREOF - An energy conversion device comprising a first electrically conductive layer, a mesoporous oxide layer contiguous with the first electrically conductive layer and comprised of volcanic ash particles and photoactive dye molecules adsorbed on the ash particles, an electrolyte layer contiguous with the mesoporous oxide layer and comprised of a redox mediator, a catalyst layer comprised of an electrically conductive catalyst material, and a second electrically conductive layer contiguous with the catalyst layer. The electrically conductive catalyst material may be graphene, graphite, platinum, or carbon. The device may be further comprised of a light transmissive substrate contiguous with the first electrically conductive layer. The mesoporous oxide layer may be further comprised of titanium dioxide particles. The volcanic ash may comprise a mixture of particles from different indigenous sources of volcanic ash. Methods of fabrication of the device and conversion of light energy to electrical energy using the device are also disclosed. | 2016-10-06 |
20160293344 | SOLAR CELL DEVICE - A photovoltaic cell including: (a) a housing including an at least partially transparent cell wall having an interior surface; (b) an electrolyte, disposed within the cell wall, and containing an iodide based species; (c) a transparent electrically conductive coating disposed on the interior surface; (d) an anode disposed on the conductive coating, the anode including: (i) a porous film containing titania, the porous film adapted to make intimate contact with the iodide based species, and (ii) a dye, absorbed on a surface of the porous film, the dye and the porous film adapted to convert photons to electrons; (e) a cathode disposed on an interior surface of the housing, and disposed substantially opposite the anode; (f) electrically-conductive metallic wires, disposed at least partially within the cell, the wires electrically contacting the anode and the electrically conductive coating, and (g) a second electrically conductive coating including an inorganic binder and an inorganic electrically conductive filler, the second coating bridging between and electrically communicating between each of the wires and the transparent coating, the wires adapted to boost collection of a current generated by the cell. | 2016-10-06 |
20160293345 | CAPACITOR MODULE - A capacitor module comprises: a lower block panel including first conductive blocks arranged to be tightly attached to each other and respectively having a first lower coupling unit formed at one side and a second lower coupling unit formed at the other side; an upper block panel including second conductive blocks arranged to be tightly attached to each other and respectively having a second upper coupling unit formed at one side to be positioned on a top of the second lower coupling unit and a first upper coupling unit formed at the other side; and capacitors arranged to be positioned between the lower block panel and the upper block panel and respectively having a first external electrode connected to the first lower coupling unit or the second upper coupling unit and a second external electrode connected to the second lower coupling unit or the first upper coupling unit. | 2016-10-06 |
20160293346 | PSEUDOCAPACITIVE ELECTRODES AND METHODS OF FORMING - Pesudocapacitive electrodes having improved electrochemical properties for energy storage systems, and methods for their manufacture. The pseudocapacitive electrode may include a porous substrate and a nanoscale structure having an array of nanoneedles or an array of nanopetals located on the substrate. The nanoscale structure includes a bi- or tri-metal oxide or a bi- or tri-metal hydroxide. | 2016-10-06 |
20160293347 | GRAPHENE OXIDE AND CARBON NANOTUBE INK AND METHODS FOR PRODUCING THE SAME - An energy device including a paper based substrate having a top surface and a bottom surface, and a graphene oxide and carbon nanotube composite deposited onto at least the top surface. The energy device can be used as an electrode in, for example, a supercapacitor. | 2016-10-06 |
20160293348 | POLYFULLERENES USEFUL AS ELECTRODES FOR HIGH POWER SUPERCAPACITORS - An electrochemically-polymerized fullerene, or fullerene derivative, homopolymer that can be used as an organic negative electrode for supercapacitors is described. | 2016-10-06 |
20160293349 | SAFETY TEST SWITCH - An interface test device for testing a circuit, the interface test device including a module configured to open and close a medium to high voltage monitoring circuit, the module having at least one pair of contacts biased towards each other that are electrically connected and in line with the medium to high voltage monitoring circuit; at least one pair of insulated jacks, wherein the at least one pair of insulated jacks is connected to the medium to high voltage monitoring circuit before or substantially simultaneously with the medium to high voltage monitoring circuit being opened; at least one disconnect plug that is insertable into the module through at least one parking opening into at least one parking position and insertable into the module through at least one disconnect opening into at least one disconnect position. | 2016-10-06 |
20160293350 | FOOTSWITCH ASSEMBLY - A footswitch assembly | 2016-10-06 |
20160293351 | CONTACT UNIT - The present invention relates to a contact unit for changing over between winding taps on a control winding of a tapped transformer. Such a contact unit can be used particularly preferably for electrical switchgear in high-voltage engineering, such as selector switches or changeover switches. A common feature of both kinds of device in this case is that the changeover between the winding taps on the control winding of the tapped transformer is accomplished without load current. The general inventive concept is to include the contact element of the contact unit in a separate contact housing, so that the contact element and the contact housing form a separate assembly and so that the contact housing, including the contact element, can be fixed in a recess provided in the contact mounting by means of a retaining element. | 2016-10-06 |
20160293352 | METHOD FOR PRODUCING PLATE ARRANGEMENTS AND USE THEREOF - A method for producing plate arrangements and using these for cooling gaseous blow-off in electric installation devices, produces a plate stack, which is formed in a cuboidal shape, with a stack length and a stack width. The plate stack is made of shaped rectangular sheets which are produced using a shaping process and are sheet-metal strips of a uniform thickness. First shaped sheets with a uniform length which corresponds to the stack length and second shaped sheets with a width which corresponds maximally to the stack width are used. The shaped sheets are stacked one on top of the other after being shaped such that multiple continuous cavities, i.e., slots, are formed in the longitudinal direction of the stack parallel to the uniform length, and the shaped sheets are connected to one another in a captive mariner so as to form a self-supporting structure of a plate stack. | 2016-10-06 |
20160293353 | SWITCH ASSEMBLY, SWITCH DEVICE HAVING THE SWITCH ASSEMBLY AND ELECTRONIC APPARATUS HAVING THE SWITCH DEVICE - An electronic apparatus includes a housing having first and second cover bodies covering opposite first and second ends thereof, and a switch device including a support member, and a switch assembly mounted on and slidable relative to the support member and having first and second contact points. When one of the first and second cover bodies covers one of the ends of the housing and pushes one of the first and second contact points with the other one of the first and second contact points being unblocked, the switch assembly is placed in an OFF state. When the first and second cover bodies cover the ends of the housing and push the first and second contact points toward each other, the switch assembly is switched from the OFF state to an ON state. | 2016-10-06 |
20160293354 | Electrical Switch - A keypad with a contact element in a form of a contact pill for intermittent contacting of printed circuit board (PCB) contacts on a PCB, where the contact element includes a plurality of irregularly shaped electrically conductive particles, and where the contact element is connected to the keypad or to an element of the keypad. | 2016-10-06 |
20160293355 | Key Input Device, Method of Manufacturing the Same, and Image Recording Apparatus - A key input device includes: keys each including a contact portion provided on its back surface; a holder holding the keys movably; a conductive member opposed to the holder; and a circuit board having a switch surface and switches arranged on the switch surface and each contactable with the contact portion of a corresponding key. The conductive member is interposed between the switch surface and the holder. The holder has first through holes, and the conductive member has second through holes. At least one of the contact portion and the switch is inserted in a corresponding one of the first through holes, and at least one of the contact portion and the switch is inserted in a corresponding one of the second through holes. | 2016-10-06 |
20160293356 | KEYBOARD MODULE - A keyboard module includes a pressing layer, a switch circuit board, a base plate and plural glue dots. The pressing layer includes plural key parts. The switch circuit board includes plural first wiring patterns, plural second wiring patterns and plural spacing dots. The plural glue dots are disposed on a lower wiring plate of the switch circuit board. The plural glue dots and the plural spacing dots are staggered. Due to the plural glue dot, the non-bonding zones of the lower wiring plate without the glue dots are bendable. When the key part is pressed, the lower wiring plate corresponding to the pressed key part is bent. Consequently, the first wiring pattern is inserted into the region between the corresponding spacing dots and contacted with the corresponding second wiring pattern. | 2016-10-06 |
20160293357 | ELECTRONIC DEVICE, PRINTING DEVICE AND ELECTRONIC DEVICE PRODUCTION METHOD - An electronic device, printing device, and electronic device production method in which a member comprising protruding pressing parts and plural members comprising openings into which the pressing parts are inserted are positioned with excellent accuracy are provided. | 2016-10-06 |
20160293358 | TOGGLE SWITCH AND SWITCH DEVICE - A toggle switch includes a first substrate, a lever, an operation knob, and a light guide. The first substrate includes a first contact, a second contact, and a light source. The lever is configured to pivot in a thickness-wise direction of the first substrate and contact one of the first contact and the second contact. The operation knob is attached to the lever and includes a light outlet. The operation knob receives light, guides the light, and emits the light out of the light outlet. The light guide guides light emitted from the light source to the light outlet. The lever includes a metal plate and a resin plate into which the metal plate is inserted. The resin plate includes an attachment groove that extends in the thickness-wise direction of the first substrate. The light guide is attached to the attachment groove. | 2016-10-06 |
20160293359 | A LOCKABLE ROCKER SWITCH, AN ELECTRICAL CIRCUIT INCLUDING SUCH A LOCKABLE ROCKER SWITCH, AND METHODS FOR UNLOCKING AND LOCKING SUCH A LOCKABLE ROCKER SWITCH - A lockable rocker switch includes a fixed part, a rotatable part rotating between a first and a second rotation position, a magnetically actuatable locking component movable between a locking position so as to prevent rotation of rotatable part and a release position, so that rotatable part may rotate. The lockable rocker switch further includes a control component movable onto the rotatable part between a control position, for causing a magnetic action urging the locking component towards the release position, and a rest position, stopping the magnetic action. | 2016-10-06 |
20160293360 | HANDLE SWITCH FOR VEHICLE - A handle switch for use on a vehicle includes a plurality of switches for operating electric devices on a vehicle. The handle switch is mounted on a switch case fixed to a handlebar of the motorcycle, wherein the plurality of switches include a composite switch having a plurality of operating directions and other switches having less operating directions than the composite switch. The composite switch is disposed on the switch in a position closer to a center of a vehicle body, and the other switches are disposed in a position between a handle grip fixed to an end of the handlebar and the composite switch. The composite switch has an operating portion is directed rearwardly of the vehicle body. The operating portion of the composite switch includes a four-way switch as a plural-direction operator projects rearwardly of the vehicle body. | 2016-10-06 |
20160293361 | INPUT DEVICE - An input device includes: a switch unit that has a fixed contact and a movable contact placed so as to be movable away from and toward the fixed contact; a rubber member provided so as to be elastically deformable, the rubber member pressing the movable contact; and a slide member placed so as to be movable so that the slide member can press the rubber member. The rubber member has a first load generating part, which presses the movable contact, and a plurality of load adjusting parts disposed so as to enclose the first load generating part. The slide member has a first pressing part, which presses the first load generating part, and a plurality of second pressing parts, which press the plurality of load adjusting parts. | 2016-10-06 |
20160293362 | BREAKER - A breaker includes conductors, each including an elongated flat cut portion, cutting chambers arranged in correspondence with the cut portions, a single cutting member that includes blades to cut the cut portions in the cutting chambers, a gas generator that generates gas to move the cutting member toward the cut portions, and an arc attenuation portion located between the two cut portions that are adjacent to each other. The conductors are located between two devices. Each cut portion is cut to form two separated cutting ends and electrically disconnect the devices. The arc attenuation portion attenuates an arc generated between the two cutting ends of one of the two adjacent cut portions and the two cutting ends of the other cut portion. | 2016-10-06 |
20160293363 | Method For Controlling A Contactor Device, And Control Unit - A method in a control unit for closing a contactor device. The control unit is configured to enable the movement between the closed and opened position by energizing a coil of an electromagnetic circuit. The method includes applying a voltage over the coil; determining, during a first period of time, current through the coil and voltage over the coil and estimating based thereon model parameters for a model predicting the behavior of the current through the coil if the contactor device were to stay in an open position, and measuring, after the ending of the first period of time, current through the coil and determining a difference between, on the one hand the measured current and, on the other hand a predicted current of the model, and repeating the measuring and determining until a state change from open position to closed position is detected by the difference in current. | 2016-10-06 |
20160293364 | ELECTROMAGNETIC ACTUATOR - The invention relates to a method for driving an electromagnetic actuator, which comprises a field winding for generating a magnetic field and a movable armature, wherein, in the method, in order to move the armature from a preset starting position into a preset end position, a magnetic flux is generated in the field winding and the magnetic flux through the field winding or a flux variable correlated with the magnetic flux through the field winding is measured so as to form an actual value. The invention provides that, in order to move the armature from the starting position into the end position, the magnetic flux through the field winding is regulated, namely in such a way that the characteristic of the actual value corresponds to a fixedly preset setpoint flux curve. | 2016-10-06 |
20160293365 | RELAY SYSTEM - A relay system includes a plurality of relays that is provided between a power supply unit supplying electric power and a load acting by receiving the electric power supplied from the power supply unit to switch between conduction and interruption of the electric power supplied from the power supply unit to the load, each of the relays having an exciting coil, a control unit that controls switching between application of current to the exciting coils and interruption of the current, first switches that separately excite the exciting coils, and a second switch that is connected between the exciting coils. The control unit controls turning on and off the first switches and the second switch to switch the exciting coils between parallel connection and series connection. | 2016-10-06 |
20160293366 | ELECTROMAGNETIC CONTACTOR - The electromagnetic contactor includes a first frame in which an operation electromagnet is mounted; a second frame in which a contact mechanism is mounted; and a snap-fit section that is made up of a fitting protruding section and a hook section formed to one and the other of the first and second frame, respectively, the hook section fitting to the fitting protruding section. The hook section has a flexible projecting plate section formed in a projecting manner to an open end of either the first or second frame and a fitting section formed at a tip of the flexible projecting plate section, the fitting section fitting to the fitting protruding section. The flexible projecting plate section is provided with elasticity that fits the fitting section to a base side of the fitting protruding section in accordance with progress of wear between the fitting section and the fitting protruding section. | 2016-10-06 |
20160293367 | ELECTRICAL SWITCHING DEVICE - An electrical switching device including an electric power switching module including a block of three input terminals and three output terminals, each input or output terminal being connected to a stationary contact of an electrical switch also including a mobile contact, configured to switch between an open position and a closed position, the mobile contact configured to be moved by an electromagnetic drive mechanism, and a control module, including at least one control input terminal and at least one control output terminal. The control module includes the electromagnetic drive mechanism configured to be supplied by the control terminals to control a position of one of the mobile contacts. A supervision module includes an auxiliary input contact terminal and two auxiliary output contact terminals, the auxiliary input contact terminal being shared by the two auxiliary output contact terminals, the power module being removable separately from the control and supervision modules. | 2016-10-06 |
20160293368 | RELAY APPARATUS HAVING PLURALITY OF RELAYS AND RELAY SYSTEM INCORPORATING THE RELAY APPARATUS - A relay apparatus incorporates at least first and second relays having respective first and second electromagnetic coils, with a single yoke partially surrounding each of the coils. When current is passed through only the first electromagnetic coil, to activate the first relay, resultant magnetic flux acting on the armature of the second relay is attenuated by passing a current through the second electromagnetic coil to produce opposing-direction magnetic flux. When current is passed in the opposite direction through the second coil, to activate the second relay, the magnetic fluxes produced by the first and second electromagnetic coils become mutually reinforced, thereby reducing the power consumption required to activate both of the relays and to maintain that activated state. | 2016-10-06 |
20160293369 | ELECTRICAL SWITCH, IN PARTICULAR A SWITCH FOR AN ELECTRICAL POWER TOOL - An electrical switch for an electric power tool. The electrical switch has a contact system that can be switched between an off position and an on position, and having a movable actuating means for switching the contact system. The actuating means comprises a plunger and a contact piece. The contact piece acts on the contact system for the purpose of switching. A coupling element is provided, such that the plunger can be brought into and out of interaction with the contact piece. The interaction is effected such that it is made possible for the contact system to be switched into the on position and the off position by means of the plunger, and for the contact system to be switched into the off position independently of the plunger. | 2016-10-06 |
20160293370 | POLARIZED DC ELECTROMAGNETIC DEVICE AND ELECTROMAGNETIC CONTACTOR USING SAME - A polarized DC electromagnetic device and electromagnetic contactor using same to improve assembly efficiency without size increase of the electromagnetic device. The device includes a plunger inserted through a cylindrical portion of a spool around which an excitation coil is wound and having a first armature and a second armature attached to both ends, an outer yoke attracting the first armature and the second armature, an inner yoke disposed inside the outer yoke and attracting the second armature, and a permanent magnet disposed between the outer yoke and the inner yoke. The spool includes radially protruding flange portions respectively formed at both ends of the cylindrical portion, a coil terminal attachment portion formed in the flange portion on the first armature side, and a coil terminal attached to the coil terminal attachment portion. | 2016-10-06 |
20160293371 | INTEGRATED CANTILEVER SWITCH - An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm | 2016-10-06 |
20160293372 | CIRCUIT INTERRUPTER WITH WIRELESS UNIT, COMMUNICATION SYSTEM INCLUDING THE SAME AND ASSOCIATED METHOD - A circuit interrupter includes a first terminal structured to electrically connect to a power source, a second terminal structured to electrically connect to a load, separable contacts electrically connected between the first terminal and the second terminal and being moveable between a closed position and an open position, an operating mechanism structured to trip open the separable contacts, an electronic trip unit structured to detect a fault condition based on power flowing between the first and second terminals and to retrieve diagnostic or setting information associated with the circuit interrupter, and a wireless unit structured to provide the setting or diagnostic information associated with the circuit interrupter to an external device via a wireless communication protocol. | 2016-10-06 |
20160293373 | ELECTRICAL SWITCHING APPARATUS AND SECONDARY DISCONNECT ASSEMBLY WITH CONTACT ALIGNMENT FEATURES THEREFOR - A secondary disconnect assembly is for an electrical switching apparatus, such as a power circuit breaker. The secondary disconnect assembly includes a terminal block mount having a number of first mounting features, at least one terminal block, and at least one accessory plug. Each terminal block includes a number of receptacles and a number of second mounting features, which cooperate with the first mounting features to properly align, mount and stabilize the terminal block on the terminal block mount. Each accessory plug includes a number of contact alignment features structured to align and guide the accessory plug into a corresponding one of the receptacles. | 2016-10-06 |
20160293374 | ELECTRICAL SWITCHING APPARATUS AND SECONDARY DISCONNECT ASSEMBLY WITH ERROR-PROOFING FEATURES THEREFOR - A secondary disconnect assembly is for electrically connecting and disconnecting accessories to an electrical switching apparatus, such as a power circuit breaker. The secondary disconnect assembly includes a terminal block assembly comprising a mounting member, at least one terminal block removably mounted on the mounting member, and at least one accessory plug structured to be removably inserted into the terminal block to be electrically connected to the terminal block. The terminal block and the accessory plug each include a plurality of error-proofing features. The error-proofing features prohibit insertion of the accessory plug into the terminal block unless the accessory plug is correctly disposed in a predetermined orientation. | 2016-10-06 |
20160293375 | ELECTRON GUN AND RADIATION GENERATING APPARATUS - The invention relates to an electron gun for generating a flat electron beam, comprising a cathode with an emission surface which is curved about a central axis and which is designed to emit electrons. The electron gun further comprises an accelerating device for accelerating the electrons in a radial direction towards a target region on the central axis. Furthermore, the emission surface has a width in the azimuth direction and a height oriented perpendicularly to the width, said width being at least ten times greater than the height. | 2016-10-06 |
20160293376 | TRAVELING WAVE TUBE - When a plurality of amplifiers for transmission source are used, a related traveling wave tube requires a large space for arranging a plurality of the traveling wave tubes. In this respect, a traveling wave tube of an exemplary embodiment of the present invention includes two meander-shaped waveguides formed to have the same meander pitch, wherein the meander-shaped waveguides are assembled together such that beam holes of one of the meander-shaped waveguides and those of the other one are arranged on the same axis, and one of the meander-shaped waveguides is shifted with respect to the other one by a quarter folding period in the wave traveling direction. | 2016-10-06 |
20160293377 | APPARATUS FOR GHz RATE HIGH DUTY CYCLE PULSING AND MANIPULATION OF LOW AND MEDIUM ENERGY DC ELECTRON BEAMS - An ElectroMagnetic-Mechanical Pulser can generate electron pulses at rates up to 50 GHz, energies up to 1 MeV, duty cycles up to 10%, and pulse widths between 100 fs and 10 ps. A modulating Transverse Deflecting Cavity (“TDC”) imposes a transverse modulation on a continuous electron beam, which is then chopped into pulses by an adjustable Chopping Collimating Aperture. Pulse dispersion due to the modulating TDC is minimized by a suppressing section comprising a plurality of additional TDC's and/or magnetic quadrupoles. In embodiments the suppression section includes a magnetic quadrupole and a TDC followed by four additional magnetic quadrupoles. The TDC's can be single-cell or triple-cell. A fundamental frequency of at least one TDC can be tuned by literally or virtually adjusting its volume. TDC's can be filled with vacuum, air, or a dielectric or ferroelectric material. Embodiments are easily switchable between passive, continuous mode and active pulsed mode. | 2016-10-06 |
20160293378 | SiC Coating In an Ion Implanter - An ion implanter has a coating of low resistivity silicon carbide on one or more of the conductive surfaces that are exposed to ions. For example, ions are generated in an ion source chamber, and the interior surfaces of the walls are coated with low resistivity silicon carbide. Since silicon carbide is hard and resistant to sputtering, this may reduce the amount of contaminant ions that are introduced into the ion beam that is extracted from the ion source chamber. In some embodiments, the extraction electrodes are also coated with silicon carbide to reduce the contaminant ions introduced by these components. | 2016-10-06 |
20160293379 | Method of Inspecting Wafer Using Electron Beam - A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image. | 2016-10-06 |
20160293380 | CHARGED PARTICLE BEAM PROCESSING USING PROCESS GAS AND COOLED SURFACE - A cold trap is provided to reduce contamination gases that react with the beam during operations that use a process gas. The cold trap is set to a temperature that condenses the contamination gas but does not condense the process gas. Cold traps may be used in the sample chamber and in the gas line. | 2016-10-06 |
20160293381 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a reaction chamber; a stage which is disposed inside the reaction chamber and on which a conveyance carrier is mountable; an electrostatic chuck mechanism including an electrode portion that is disposed inside the stage; a support portion which supports the conveyance carrier between a stage-mounted position on the stage and a transfer position that is distant from the stage upward; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage by lowering the support portion, the electrostatic chuck mechanism starts applying a voltage to the electrode portion before contact of an outer circumferential portion of a holding sheet which holds the conveyance carrier to the stage. | 2016-10-06 |
20160293382 | SYSTEMS AND METHODS FOR REVERSING RF CURRENT POLARITY AT ONE OUTPUT OF A MULTPILE OUTPUT RF MATCHING NETWORK - A substrate processing tool for processing a substrate includes a processing chamber including a substrate support. First and second coils are arranged outside of the processing chamber. Each of the first and second coils includes first and second conductors. A coil driving circuit drives current through the coils to generate plasma in the processing chamber. A coil reversing circuit is configured to selectively reverse a polarity of current flowing through the first and second conductors of the first coil. The coil reversing circuit includes an H-bridge circuit. | 2016-10-06 |
20160293383 | SPUTTERING DEVICE AND METHOD FOR REPLACING FILM ROLL IN SPUTTERING DEVICE - In a sputtering device, a supply-side film roll chamber includes a supply-side vacuum pump and a supply-side main valve. A storage-side film roll chamber includes a storage-side vacuum pump and a storage-side main valve. A supply-side load-lock valve is provided between the supply-side film roll chamber and a layer forming chamber. A storage-side load-lock valve is provided between the storage-side film roll chamber and the layer forming chamber. In a method for replacing a film roll, a supply-side main valve and a supply-side load-lock valve are closed when replacing a supply-side film roll. A storage side-main valve and a storage-side load-lock valve are closed when replacing a storage-side film roll. | 2016-10-06 |
20160293384 | METHODS FOR REMOVING CONTAMINATION FROM SURFACES IN SUBSTRATE PROCESSING SYSTEMS - Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer. | 2016-10-06 |
20160293385 | Fault Detection Using Showerhead Voltage Variation - Methods and systems for detecting processing conditions of a plasma processing system are provided. One method includes providing radio frequency (RF) power from an RF power supply to a showerhead of the plasma processing system and running a process operation on a substrate disposed in the plasma processing system. The method further includes sensing a voltage the showerhead using a voltage probe that is connected in-line between the RF power supply and the showerhead. The sensing of the voltage produces voltage values during the running of the process operation. The method includes comparing the voltage values against a voltage check band that is predefined for the process operation being run. The comparing is configured to detect when the voltage values are outside of the voltage check band. The method also includes generating an alert when the comparing detects that the voltage values are outside of the voltage check band. The alert further configured to identify a type of fault based on the voltage check band that was predefined for the process operation. | 2016-10-06 |
20160293386 | ENERGETIC NEGATIVE ION IMPACT IONIZATION PLASMA - A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided. | 2016-10-06 |
20160293387 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and an electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space. | 2016-10-06 |
20160293388 | PNEUMATIC COUNTERBALANCE FOR ELECTRODE GAP CONTROL - A plasma processing system for performing a plasma processing application includes a plasma processing chamber, first and second electrodes residing in the plasma processing chamber, and a pneumatic counterbalance system operatively connected to the first electrode. The pneumatic counterbalance system is configured to support and maintain a position of the first electrode during a plasma processing application for gap control. A drive assembly separate from the pneumatic counterbalance system is configured to move the first electrode with respect to the second electrode in the plasma processing chamber for gap adjustment. | 2016-10-06 |
20160293389 | DIPOLE RING MAGNET ASSISTED MICROWAVE RADIAL LINE SLOT ANTENNA PLASMA PROCESSING METHOD AND APPARATUS - A method and apparatus is provided for obtaining a low average electron energy flux onto a substrate in a processing chamber. A processing chamber includes a substrate support therein for chemical processing. An energy source induced plasma, and ion propelling means, directs energetic plasma electrons toward the substrate support. A dipole ring magnet field is applied perpendicular to the direction of ion travel, to effectively prevent electrons above an acceptable maximum energy level from reaching the substrate holder. Rotation of the dipole magnetic field reduces electron non-uniformities. | 2016-10-06 |
20160293390 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND RECORDING MEDIUM - There is provided an apparatus of performing a plasma process on substrates mounted on an upper surface of a rotary table. The apparatus includes: a heater for heating the substrates; a process gas supply part for supplying a process gas toward the upper surface of the rotary table; an antenna for generating an inductively coupled plasma by converting the process gas to plasma; a light detection part for detecting respective light intensities of R, G and B component as light color components; a calculation part for obtaining an evaluation value corresponding to a change amount before and after supplying a high-frequency power to the antenna, with respect to at least one of the respective light intensities; and an ignition determination part for comparing the evaluation value with a threshold value and to determine that ignition of plasma is not generated if the evaluation value does not exceed the threshold value. | 2016-10-06 |
20160293391 | Method of Correlating Precursor and Fragment Ions - A method of mass spectrometry is disclosed comprising separating precursor ions using an ion mobility separator such that different precursor ions have different drift times through the on mobility separator; mass filtering said separated precursor ions with a mass filter, wherein the mass to charge ratios of the precursor ions transmitted by the mass filter vary as a function of the drift times of the precursor ions through the ion mobility separator; performing a first mode of operation comprising fragmenting the separated and mass filtered precursor ions in a fragmentation device to form fragment ions; urging the fragment ions through the fragmentation device such that fragment ions derived from different precursor ions that have been separated by the ion mobility separator are maintained spatially separated from each other as they are urged through the fragmentation device; and detecting the fragment ions. The method enables precursor ions to be associated with their related fragment ions more accurately. | 2016-10-06 |
20160293392 | ION TRANSFER TUBE WITH INTERMITTENT INLET - An ion transfer tube assembly, a mass spectrometry system, and a method for providing an ion stream to an ion detection device are described that include using an ion transfer tube and an additional conduit connected to a small high-flow low vacuum pump and a valve. In an implementation, an ion transfer tube assembly includes an ion transfer tube assembly having an intermittent inlet for delivering an ion stream to an ion detection device that employs example techniques in accordance with the present disclosure includes an ion transfer tube, where the ion transfer tube is coupled to a first conduit; a second conduit coupled to the ion transfer tube and the ion detection device; and a third conduit coupled to the second conduit, where the third conduit includes a valve and is coupled to a pump. | 2016-10-06 |
20160293393 | High Frequency Voltage Supply Control Method for Multipole or Monopole Analysers - A voltage supply system for supplying an RF voltage to an RF resonant load comprising an ion-optical component of a mass spectrometer is disclosed. The system comprises a Direct Digital Synthesiser (“DDS”) arranged and adapted to output an RF voltage. The voltage supply system is arranged and adapted: (i) to vary the frequency of the RF voltage output by the Direct Digital Synthesiser, (ii) to determine a first resonant frequency of the RF resonant load comprising the ion-optical component, and (iii) to determine whether or not the generation of an RF voltage at the first resonant frequency by the Direct Digital Synthesiser would also result in the generation of a spur frequency close to the first resonant frequency. If it is determined that a spur frequency would be generated close to the first resonant frequency then the voltage supply system is further arranged and adapted: (iv) to consult a look-up table comprising one or more preferred frequencies, and (v) to direct the Direct Digital Synthesiser to generate an RF voltage at a second frequency which corresponds with one of the preferred frequencies from the look-up table, wherein the second frequency is different to said first resonant frequency. | 2016-10-06 |
20160293394 | MALDI-TOF MS Method And Apparatus For Assaying An Analyte In A Bodily Fluid From A Subject - A method for assaying an analyte in a bodily fluid from a subject includes collecting a sample of the bodily fluid comprising an analyte of interest from a subject. A sample with the bodily fluid comprising the analyte of interest suitable for analysis by Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (MALDI-TOF) is then prepared. Mass spectrometry is then performed to determine mass-to-charge ratios and ion abundances of the bodily fluid or its components. The mass-to-charge ratio values and the ion abundance of each of these ratios are then analyzed using calibration standards to interpret a resulting mass spectrum and to provide quantitative information. | 2016-10-06 |
20160293395 | Tool Free Gas Cone Retaining Device for Mass Spectrometer Ion Block Assembly - A mass spectrometer is disclosed comprising an atmospheric pressure interface comprising an ion block or sub-assembly having an internal passage. The atmospheric pressure interface further comprises either an inner sampling cone, a capillary interface or other gas limiting interface. The mass spectrometer comprises a clamp formed from a thermally insulating material and a removable outer gas cone which is slidably inserted into or onto the clamp so that the outer gas cone is retained by the clamp in use. The clamp is arranged and adapted to be pushed by a user into engagement with the ion block or sub-assembly so as to position the outer gas cone adjacent the inner sampling cone, capillary interface or other gas limiting interface so as to secure the outer gas cone to the ion block or sub-assembly and to form a gas tight seal with the ion block or sub-assembly without use of mechanical fasteners. | 2016-10-06 |
20160293396 | NEW TYPE RECTANGULAR ION TRAP DEVICE AND METHOD FOR ION STORAGE AND SEPARATION - The present invention discloses a rectangular ion trap device and method for ion storage. The device comprises a front end cover including left electrode, middle layer insulator, and right electrode, wherein the left electrode and the right electrode are respectively positioned at both sides of the middle layer insulator; a rear end cover, wherein the rear end cover has the same axis as the front end cover, and the central position of the rear end cover electrode is penetrated; the front and rear electrodes and the upper and lower electrodes are symmetric along the axis of the front end cover, and these electrodes form a space region for ion storage about the axis between the front end cover and the rear end cover electrode. The present invention can increase the number of ions in storage within a unit time prominently. | 2016-10-06 |
20160293397 | WAFER PRODUCING METHOD - Disclosed herein is a wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot. The wafer producing method includes a modified layer forming step of setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot as relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer. In the modified layer forming step, the focal point of the laser beam is relatively moved from a radially inside position inside the ingot toward the outer circumference of the ingot. | 2016-10-06 |
20160293398 | DEPOSITION OF CONFORMAL FILMS BY ATOMIC LAYER DEPOSITION AND ATOMIC LAYER ETCH - Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided. | 2016-10-06 |
20160293399 | SEMICONDUCTOR MULTILAYER STRUCTURE AND FABRICATION METHOD THEREOF - The present invention is directed to a semiconductor multilayer structure and fabrication method thereof. A semiconductor multilayer structure comprises a silicon substrate, and a plurality of semiconductor layers, wherein at least one of the semiconductor layers is an aluminum contained nitride layer; and an indium-containing catalyst is utilized to enhance migration of aluminum in the aluminum contained nitride layer. A fabrication method is also disclosed here. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too. | 2016-10-06 |
20160293400 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing. | 2016-10-06 |
20160293401 | WET PROCESSING APPARATUS - A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning processing. The present invention includes a stage where a wafer is placed, a rotary driving unit that rotates the stage in a circumferential direction, a liquid discharge nozzle disposed facing the wafer placed on the stage and supplies a cleaning liquid on the wafer placed on the stage, and a control unit that causes the liquid discharge nozzle to supply a space between the wafer placed on the stage and the liquid discharge nozzle with a predetermined amount of the cleaning liquid to fill the space. The present invention also includes a lamp disposed on a position facing the wafer placed on the stage to heat at least an interface portion of the wafer and a cleaning liquid. | 2016-10-06 |
20160293402 | METHOD AND SYSTEM FOR CLEANSING WAFER IN CMP PROCESS OF SEMICONDUCTOR MANUFACTURING FABRICATION - A method for cleaning a semiconductor wafer after a Chemical Mechanical Polishing (CMP) process is provided. The method includes providing the semiconductor wafer into a cleaning module. The method further includes cleaning the semiconductor wafer by rotating a cleaning brush assembly. The method also includes applying an agitated cleaning liquid to clean the cleaning brush assembly. | 2016-10-06 |
20160293403 | PATTERN FORMING METHOD AND HEATING APPARATUS - The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation. | 2016-10-06 |
20160293404 | METHOD AND APPARATUS FOR TREATING SUBSTRATE - Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying step of supplying a treatment liquid for forming a liquid film on the substrate while rotating the substrate; and a liquid diffusing step of diffusing the treatment liquid discharged to the substrate by rotating the substrate, after the liquid supplying step. The liquid diffusing step includes: a primary diffusion step of rotating the substrate at a first diffusion speed; and a secondary diffusion step of rotating the substrate at a second diffusion speed, after the primary diffusion step. The second diffusion speed is higher than the first diffusion speed. Accordingly, the treatment liquid can be applied to the substrate again by performing the secondary diffusion step, making it possible to adjust the thickness of a photosensitive film. | 2016-10-06 |
20160293405 | TRENCH AND HOLE PATTERNING WITH EUV RESISTS USING DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA (CCP) - A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer. The method further includes repeating the selective depositing and etching, at least until the complete thickness of the non-masked portions of the antireflective coating layer is removed, to expose the underlying organic layer. | 2016-10-06 |
20160293406 | METHODS OF FORMING NANOSTRUCTURES USING SELF-ASSEMBLED NUCLEIC ACIDS, AND NANOSTRUCTURES THEREOF - A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate comprises multiple regions. Each of the regions on the patterned substrate is specifically tailored for adsorption of specific nucleic acid structure in the directed self-assembly. | 2016-10-06 |
20160293407 | DIELECTRIC FILLING MATERIALS WITH IONIC COMPOUNDS - A method includes applying a filling material to a surface of a first layer overlying a substrate. The first layer includes a dielectric material with a plurality of pores. The filling material includes a polymer and an ionic compound. The method includes heating the structure to enable the filling material to at least partially fill the plurality of pores throughout the first layer, and removing the residual filling material from the surface of the first layer, while leaving substantially all of the polymer in the pores of the first layer. | 2016-10-06 |
20160293409 | PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 2016-10-06 |
20160293410 | BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF A BORON CONTAINING FILMS - Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the film is deposited from at least one precursor having the following Formula I or II described herein. | 2016-10-06 |
20160293411 | CYCLICAL, NON-ISOBARIC, PORE SEALING METHOD TO PREVENT PRECURSOR PENETRATION INTO THE SUBSTRATE - A method for processing a substrate using a plasma chamber. The method includes providing the substrate on a pedestal of the plasma chamber, the substrate having a material layer that has a porous structure and a least one feature formed in the material layer that exposes one or more open pores of the porous structure. The method further includes introducing an inert gas into the plasma chamber so that a pressure of the plasma chamber is increased to a first pressure that is higher than an average process pressure used for depositing a thin film, wherein increasing to the first pressure causes at least some of the inert gas to migrate into the one or more open pores of the porous structure of the material layer and decreasing the pressure of the plasma chamber to a second pressure that is lower than the average process pressure used for depositing the thin film, wherein decreasing the pressure to the second pressure causes at least some of the inert gas in the material layer to outgas from the one or more open pores. The method then includes depositing the thin film over the material layer and the feature formed in the material layer simultaneously while the inert gas outgases from the one or more open pores of the material layer to seal the one or more open pores while the inert gas outgases. | 2016-10-06 |
20160293412 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE - A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO | 2016-10-06 |
20160293413 | METHOD FOR FORMING FINFET DEVICES - A method comprises providing a substrate formed of a first semiconductor material, wherein the substrate comprises a plurality of isolation regions, etching away upper portions of the substrate to form a plurality of trenches, wherein each trench is between two adjacent isolation regions, over-growing a plurality of semiconductor fins in the trenches over the substrate through an epitaxial growth process, wherein upper portions of the semiconductor fins are above top surfaces of the isolation regions, applying a planarization process to the semiconductor fins, wherein top surfaces of the semiconductor fins are level with top surfaces of the isolation regions as a result of performing the step of applying the planarization process and removing a defect semiconductor fin to form a vacant trench. | 2016-10-06 |
20160293414 | CRYSTALLIZATION METHODS - Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes. | 2016-10-06 |
20160293415 | ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT - The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 10 | 2016-10-06 |
20160293416 | MANUFACTURING METHOD OF PACKAGE SUBSTRATE AND PACKAGE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a package substrate is provided. A conductive substrate is provided. A first photoresist layer is patterned to form first openings. A first conductive layer is formed in the first openings. A second photoresist layer is patterned to form second openings. A second conductive layer contacting the first conductive layer is formed in the second openings. The first and second photoresist layers are removed. A dielectric layer covers the first, second conductive layers and a portion of the conductive substrate. A portion of the dielectric layer is removed. A third photoresist layer is patterned to form a third opening. A portion of the conductive substrate is removed to form a fourth opening. The third photoresist layer is removed. A fourth photoresist layer is patterned to form a fifth opening. A bonding pad is formed in the fifth opening. The fourth photoresist layer is removed. | 2016-10-06 |
20160293417 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns. | 2016-10-06 |
20160293418 | SOFT LANDING NANOLAMINATES FOR ADVANCED PATTERNING - Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in advanced multiple patterning schemes are provided. In certain embodiments, the methods involve depositing a thin silicon oxide or titanium oxide film using plasma-based atomic layer deposition techniques with a low high frequency radio frequency (HFRF) plasma power, followed by depositing a conformal titanium oxide film or spacer with a high HFRF plasma power. | 2016-10-06 |
20160293419 | METHOD OF FORMING FINE PATTERNS IN A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE - Methods of forming fine patterns having a width and a pitch in semiconductor devices may be used to form a semiconductor device or electronic device. The fine patterns may be formed by forming sacrificial pillars, which in certain examples may be formed from spacer patterns. | 2016-10-06 |
20160293420 | METHODS FOR MANUFACTURING A SPACER WITH DESIRED PROFILE IN AN ADVANCED PATTERNING PROCESS - Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has having a first group of openings defined therebetween and etching the spacer layer disposed on the substrate while forming an oxidation layer on the spacer layer. | 2016-10-06 |
20160293421 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a metal-containing film including a first element that is a metal element and a second element by performing a predetermined number of times in a time-division manner a cycle of supplying an organic metal source gas containing the first element to a substrate, supplying a halogen-based metal source gas containing the first element to the substrate and supplying a reaction gas, which contains the second element and which reacts with the first element, to the substrate, wherein a value of film stress of the metal-containing film is controlled by controlling at least one value of a supply flow rate and a supply time of the organic metal source gas in the act of supplying an organic metal source gas. | 2016-10-06 |
20160293422 | METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION - The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein. | 2016-10-06 |
20160293423 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide semiconductor device includes steps below. A silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having a maximal diameter greater than 100 mm, is prepared. An impurity region is formed on a side of the first main surface of the silicon carbide substrate. In a plan view, a cover member is arranged on the side of the first main surface so as to cover at least the entire impurity region. The silicon carbide substrate is annealed at a temperature lower than a melting point of the cover member while the cover member is arranged on the side of the first main surface of the silicon carbide substrate. | 2016-10-06 |
20160293424 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT - First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities. | 2016-10-06 |
20160293425 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A method for manufacturing a semiconductor substrate, including coating a diffusion agent composition containing an impurity diffusion ingredient on a semiconductor substrate, followed by heating the formed coating film to diffuse the impurity diffusion ingredient in the semiconductor substrate, so that the impurity diffusion ingredient can be well diffused into the semiconductor substrate by the coating of the diffusion agent composition in a nano-scale thickness and heat treatment for a short period of time. When a composition comprising an impurity diffusion ingredient and a silicon compound of a predetermined structure containing an isocyanate group as the diffusion agent composition is used, the diffusion agent composition is coated on the semiconductor substrate in a thickness of not more than 30 nm and the coating film of the diffusion agent composition is heated by a predetermined method for a short period of time. | 2016-10-06 |
20160293426 | METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE - Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of producing the epitaxial wafer. | 2016-10-06 |