45th week of 2010 patent applcation highlights part 15 |
Patent application number | Title | Published |
20100282992 | DEVICE FOR THROTTLING THE FREE CROSS-SECTION OF A STEAM PIPE - A device for manually regulating the flow quantity of steam pipes, with a throttle housing having an inlet and an outlet. In order to create a particularly compact device with simple construction and low maintenance, which furthermore has a modular structure, the device has a piston arranged eccentrically inside the throttle housing and rotatable about its longitudinal axis, which piston can be activated by at least one carrier element from outside the throttle housing and is provided with an eccentric longitudinal bore, and wherein the pipe cross-section, after rotation through a specified angle, is reduced to a desired cross-section. | 2010-11-11 |
20100282993 | Continuous Flow Bypass Manifold - A continuous flow bypass manifold comprising a fixed portion and an attachment portion for removable connection with the fixed portion. The fixed portion, fixedly installed into a fluidic system, defines a flow path and comprises inlet and outlet ports, a bypass valve disposed in the flow path, a bypass outlet tube proximate the inlet port, and a bypass inlet tube proximate the outlet port. Two attachment tubes can be coupled to at least one flow-through series component and attached to the bypass outlet and inlet tubes to form an alternate flow path through the at least one flow-through, series component upon manipulation of the bypass valve to close the flow path through the fixed portion and divert the fluid to flow through the flow-through series component. This addition of a series component is accomplished without disassembling and/or reassembling the fluidic system or interrupting fluid flow. | 2010-11-11 |
20100282994 | Flow Bypass Manifold Including Drain - A flow bypass manifold including a drain comprising a fixed portion and an attachment portion for removable connection with the fixed portion. The fixed portion, fixedly installed into a fluidic system, defines a flow path and comprises inlet and outlet ports, a drain port, a bypass valve disposed in the flow path, a bypass outlet tube proximate the inlet port, and a bypass inlet tube proximate the outlet port. Two attachment tubes can be coupled to at least one flow-through series component and attached to the bypass outlet and inlet tubes to form an alternate flow path through the at least one flow-through, series component upon manipulation of the bypass valve to close the flow path through the fixed portion and divert the fluid to flow through the flow-through series component. This addition of a series component is accomplished without disassembling and/or reassembling the fluidic system or interrupting fluid flow. | 2010-11-11 |
20100282995 | Open/close Device of a Washing Tank Drain System - A open/close device of washing tank drain comprises an open/close controller having a sliding shaft and a fixed sleeve, a drain plug mechanism with an open/close function mechanism, and a connecting cable between the open/close controller and the open/close function mechanism. The open/close controller has a retaining hook to be connected with the sliding shaft. A first stop position and a second stop position, which are moveably connected with the retaining hook, are set on the surface of the sliding shaft, at different height, and the first one being closer to the head of the sliding shaft than the second one. The sliding shaft is provided with a first one-way slideway and a second one-way slideway. The open/close controller also has a spring for applying a force to the sliding shaft along the direction from the head to the tail of the sliding shaft. One end of the connecting cable is connected with the sliding shaft. | 2010-11-11 |
20100282996 | SIZING COMPOSITION FOR MINERAL WOOL COMPRISING A MONOSACCHARIDE AND/OR A POLYSACCHARIDE AND AN ORGANIC POLYCARBOXYLIC ACID, AND INSULATING PRODUCTS OBTAINED - A sizing composition for insulating products based on mineral wool, in particular on glass or on rock, includes at least one monosaccharide and/or at lest one polysaccharide, and at least one organic polycarboxylic acid having a molar mass of less than or equal to 1000. Another subject-matter of the present invention is the insulating products based on mineral fibres thus obtained and the process for the manufacture thereof. | 2010-11-11 |
20100282997 | COMPOSITION AND METHOD FOR PRODUCING AN INSULATING PRODUCT - A method for producing a finely subdivided insulating material includes the steps of: preparing a fluid composition by mixing together an alkaline silicate, a metal hydroxide and an impermeabilizing agent, heat-treating the composition so as to produce a plurality of small cavities in the composition, and finely subdividing the composition. | 2010-11-11 |
20100282998 | POLY(3,4-ETHYLENEDIOXYTHIOPHENE) - The present invention relates to a method of synthesizing poly(3,4-ethylenedioxythiophene), PEDOT in a reaction medium, an acid, an oxidant and an aqueous polyelectrolyte, and compositions thereof. The method is non-stoichiometric and provides no by-products, except water, or solid waste requiring post treatment. The method provides high yields of a composition that exhibits high conductivity. | 2010-11-11 |
20100282999 | REFRIGERATOR OIL AND WORKING FLUID COMPOSITION FOR REFRIGERATING MACHINE - The refrigerator oil of the invention comprises an ester of a polyhydric alcohol and a fatty acid with a content of a C5-C9 fatty acid of 50-100% by mole, a content of a C5-C9 branched fatty acid of at least 30% by mole and a content of a C5 or lower straight-chain fatty acid of not greater than 40% by mole, and it is used with a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant. The working fluid composition for a refrigerating machine according to the invention comprises the ester and a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant. | 2010-11-11 |
20100283000 | STRUCTURAL BODY COMPRISING FILLER AND INCOMPATIBLE RESIN OR ELASTOMER, AND PRODUCTION PROCESS OR USE THEREOF - The present invention provides a novel structure in which a filling material that is a filler is dispersed in an incompatible resin selected from a thermoplastic resin or a thermosetting resin and/or an incompatible elastomer; and use of the novel structure. In a cocontinuous structure formed from a binary system that is selected from an incompatible resin selected from a thermoplastic resin or a thermosetting resin and/or an incompatible elastomer, a filling material that is a filler is dispersed selectively and uniformly in one of the incompatible resin selected from the thermoplastic resin or the thermosetting resin and/or the incompatible elastomer. The structure is obtained by putting the filling material and the resin and/or the elastomer in a cylinder having a screw through a put-in part provided at an end of a melt-kneading part having a heating part; processing the resin or elastomer under the conditions where a rotation speed of the screw is 100 rpm to 3000 rpm and a shear rate is 150 to 4500 sec | 2010-11-11 |
20100283001 | HEAT-PROCESSABLE THERMALLY CONDUCTIVE POLYMER COMPOSITION - The present invention relates to a heat-processable thermally conductive polymer composition comprising (a) 30 to 95% by weight of a thermoplastic polymer (b) 5 to 40% by weight of a graphite powder; and (c) 0 to 65% by weight of optional further component(s), wherein the particles of the graphite powder are in the form of platelets having a thickness of less than 500 nm, and a process for the preparation heat-processable thermally conductive polymer composition. | 2010-11-11 |
20100283002 | Molybdate-Free Antifreeze Concentrate and Coolant Compositions and Preparation Thereof - A molybdate-free antifreeze composition having improved thermal stability is provided. In one embodiment, the antifreeze concentrate composition comprises from 50 to 99 wt. % of a glycol-based freezing point depressant selected from the group of: alkylene glycols, glycol monoethers, glycerins, and mixtures thereof; 0.01 to 10 wt. % of at least one of a 2-ethylhexanoic acid, isononanoic acid and 3,5,5-trimethylhexanoic acid; and 0.01 to 5 wt. % of at least one of heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, neodecanoic acid, 2-hydroxybenzoic acid, p-terbutylbenzoic acid, and mixtures thereof. In one embodiment, the composition is employed as a concentrate in admixture with 10 to 90 wt. % water. | 2010-11-11 |
20100283003 | METHOD OF WORKING UP MIXTURES COMPRISING IMIDAZOLIUM SALTS - Method of lightening the color of mixtures comprising imidazolium salts or imidazoles, wherein the mixtures are treated with an oxidant. | 2010-11-11 |
20100283004 | Composition For Forming Substrate, and Prepreg and Substrate Using The Same - Disclosed herein is a composition for forming a substrate, comprising: a liquid crystal thermosetting oligomer having one or more soluble structural units in the main chain thereof and having thermosetting groups at one or more ends of the main chain thereof; and a metal alkoxide compound having reaction groups which can be covalently bonded with the thermosetting groups. | 2010-11-11 |
20100283005 | NANOPARTICLES AND THEIR MANUFACTURE - Nanoparticles include or consist essentially of (i) a core that itself includes or consists essentially of a first material, and (ii) a layer including or consisting essentially of a second material. In various embodiments, one of the first and second materials is a semiconductor material incorporating ions from group 13 and group 15 of the periodic table, and the other of the first and second materials is a metal oxide material incorporating metal ions selected from any one of groups 1 to 12, 14 and 15 of the periodic table. In other embodiments, one of the first and second materials is a semiconductor material, and the other of the first and second materials is an oxide of a metal selected from any one of groups 3 to 10 of the periodic table. Methods for preparing such nanoparticles are also described. | 2010-11-11 |
20100283006 | WHITE LIGHT EMITTING ORGANOGEL AND PROCESS THEREOF - The present invention provides white light emitting materials. The invention further provides a process for the preparation of white light emitting organogels using the concept of molecular self-assembly and partial energy transfer. The donor acceptor type molecules on coassembly and subsequent irradiation with suitable wavelength light produce white light. On irradiation, partial transfer of the excitation energy from the donor to the acceptor takes place, resulting a broad emission covering the entire range from 400-700 nm to give bright white light emission with CIE coordinates of (0.31, 0.35). | 2010-11-11 |
20100283007 | Flexible luminescent paints - Flexible luminescent paints are prepared from physical blends of hybrid epoxy acrylic resins, cementicious acrylic resins and optionally pure acrylic coating resins together with monopropylene glycol, suspension additives, rheological additives and photoluminescent pigments. The luminescent paints exhibit bright, even and long-lasting photoluminescent afterglow, excellent flexibility in both thin and thick layers, and are suitable for spraying, brushing, rolling and screen printing. Optional fluorescent pigments may be utilized to give daylight coloration and up-convert the photoluminescent emissions to the fluorescent emissions color. | 2010-11-11 |
20100283008 | Carbon Nanotube Compositions and Methods for Production Thereof - Compositions comprising at least one type of carbon nanotube, at least one surfactant, and at least one polymer are disclosed. The compositions provide stable fluorescence over a wide range of pH in various embodiments. In some embodiments, the compositions are biocompatible. Methods for preparing the compositions from at least one pre-formed polymer are disclosed. Methods for preparing the compositions from at least one monomer are disclosed. Heating methods utilizing the compositions are disclosed. | 2010-11-11 |
20100283009 | GASIFICATION SYSTEMS AND ASSOCIATED PROCESSES - Gasification systems and associated processes are disclosed herein. In one embodiment, a gasification process includes simultaneously supplying a carbonaceous material and steam to a gasifier, the gasifier containing a liquid volume containing at least about 10% by weight of iron oxide (Fe | 2010-11-11 |
20100283010 | Corrosion Inhibitors Having Increased Biological Degradability And Minimized Toxicity - The invention relates to the use of salts of compound of the formula (1) | 2010-11-11 |
20100283011 | Corrosion Inhibitors Having Increased Biological Degradability And Minimized Toxicity - The invention relates to the use of salts of compounds of the formula (1) | 2010-11-11 |
20100283012 | PROCESS FOR THE PREPARATION OF CRYSTALLINE LITHIUM-, VANADIUM-AND PHOSPHATE-COMPRISING MATERIALS - The present invention relates to a process for the preparation of compounds of general formula (I) Li | 2010-11-11 |
20100283013 | SILVER MICROPOWDER, SILVER INK, SILVER COATING, AND METHODS FOR PRODUCTION OF THESE MATERIALS - Provided is a silver micropowder coated with a protective material and capable of more drastically reducing the sintering temperature than before. The silver micropowder comprises silver particles processed to adsorb hexylamine (C | 2010-11-11 |
20100283014 | FUNCTIONALIZED NANOPARTICLES AND METHOD - A nanoparticle including an inorganic core comprising at least one metal and/or at least one semi-conductor compound comprising at least one metal includes a coating or shell disposed over at least a portion of a surface of the core. The coating can include one or more layers. Each layer of the coating can comprise a metal and/or at least one semiconductor compound. The nanoparticle further includes a ligand attached to a surface of the coating. The ligand is represented by the formula: X-Sp-Z, wherein X represents, e.g., a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic. In certain embodiments, at least two chemically distinct ligands are attached to an surface of the coating, wherein the at least two ligands (I and II) are represented by the formula: X-Sp-Z. In ligand (I) X represents a phosphonic, phosphinic, or phosphategroup and in ligand (II) X represents a primary or secondary amine, or an imidizole, or an amide; In both ligands (I) and (II) Sp, which can be the same or different in the two compounds, represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; Z, which can be the same or different in the two compounds, is a group chosen from among groups capable of communicating specific chemical properties to the nanoparticle as well as provide specific chemical reactivity to the surface of the nanoparticle. In preferred embodiments, the nanoparticle includes a core comprising a semiconductor material. | 2010-11-11 |
20100283015 | Alkoxycrylene/Metal Oxide Photostabilized Photoactive Compositions and Methods - The photo stabilizing electronic excited state energy—particularly singlet state energy from a UV-absorbing molecule has been found to be readily transferred to (accepted by) α-cyanodiphenylacrylate compounds of formulas (I) and (V) having an alkoxy radical preferably in the four (para) position (hereinafter methoxycrylenes) on one or both of the phenyl rings: | 2010-11-11 |
20100283016 | Apparatuses and Methods for an Improved Vehicle Jack Having a Screw Jack Assembly - Various embodiments of a vehicle jack an include an elevation assembly and a guide bracket. The elevation assembly includes a threaded member and an elongated support member, with the elongated support member configured to threadedly engage and rotate relative to the threaded member. The guide assembly includes a guide bracket configured to engage the threaded member such that the threaded member moves with the guide assembly as the guide assembly moves along a path defined by a longitudinal axis of the elongated support member. This movement raises or lowers a vehicle positioned on the jack. Various embodiments address the assembly of a vehicle jack by engaging a threaded member with an elongated support member and a guide bracket. Rotation of the elongated support member about its longitudinal axis causes the threaded member to move the guide bracket along a path defined by the longitudinal axis. | 2010-11-11 |
20100283017 | EXTENDABLE UTILITY BAR - An extendable utility bar includes a substantially straight elongate outer tube defining an axis and having inner and outer ends and an inner cylindrical surface. A substantially straight elongate inner tube has an axis generally coextensive with the axis of the outer tube and has inner and outer ends and an outer cylindrical surface configured and dimensioned to be slidingly engaged at the inner ends within the outer tube in telescoping relationship to move between fully retracted and extended conditions in which the remote ends of the tubes are minimum and maximum distances, respectively, from each other. A first prying member at the remote end of the outer tube and a second prying member at the remote end of the inner tube are provided. A lock selectively locks the inner and outer tubes relative to each other to fix the positions of the prying members at a distance no less than the minimum distance and no greater than the maximum distance. In this way, the length of the utility bar can be increased to provide increased prying leverage and can be decreased to shorten the length of the bar for storage or mobility. | 2010-11-11 |
20100283018 | TENSION TRANSMITTING DEVICE - A tension transmitting device can be easily attached to and detached from a drop cable in a simple manner and can efficiently transmit tension when attached. The tension transmitting device includes: a covering body that is place over a target drop cable from a side thereof; and a tension transmission belt having a first end secured on a first end side of the covering body and a second end used as a free end, the tension transmission belt directly or indirectly receiving the tension during stringing or wiring operation on a free end side thereof. The free end side of the tension transmission belt extends from a secured portion thereof secured to the covering body so as to run on a covering surface side of the covering body and is wound around the drop cable, the drop cable being covered with the covering body on the covering surface side thereof. The covering body includes a slit provided on a second end side thereof, and the slit has a side receiving opening through which the tension transmission belt is received in a width direction. The slit | 2010-11-11 |
20100283019 | Winch bar with offset handle - A winch bar for use together with a strap winch to tighten a load-securing strap for a flatbed truck or trailer. In addition to an offset angle, the winch bar also includes one or more compensating angles establishing an obstacle clearance area defined by a laterally offset portion of the winch bar. | 2010-11-11 |
20100283020 | CORDLESS HOIST - A portable hoist assembly having a housing. The housing has a recoil spring secured thereto wherein the recoil spring is secured to a cable spool such that constant tension is provided on the cable spool. The cable spool contains a cable that is secured thereto and has a hook member secured at a first end. An actuating member having a self contained power source and connected to the cable is thus operable to feed and retract the cable. | 2010-11-11 |
20100283021 | Ratcheted lift mechanism - The present invention is related generally to hoists, and more particularly to a hoist system for safely raising, storing, and lowering loads. | 2010-11-11 |
20100283022 | Modular Railing Systems with Cellular PVC Panels - The present invention relates to the field of railing and fencing systems. More particularly, embodiments of the present invention relate to modular railing/fencing systems comprising extruded aluminum railings with cellular polyvinyl chloride (PVC) panel inserts having an impact resistance of up to about 350 lb/ft | 2010-11-11 |
20100283023 | SUPPORT STAY - A fence stay. | 2010-11-11 |
20100283024 | Memory Element and Method for Manufacturing the Same, and Semiconductor Device - The memory element has a structure at least including a first conductive layer, a second conductive layer, and a memory layer disposed between the first conductive layer and the second conductive layer. The memory layer is formed by a droplet discharge method using nanoparticles of a conductive material each of which is coated with an organic thin film. Specifically, a composition in which nanoparticles of a conductive material each of which is coated with an organic thin film are dispersed in a solvent is discharged (ejected) as ink droplets, and the solvent is dried to be vaporized to form the memory layer. Accordingly, a memory element can be formed simply. In addition, efficiency in the use of materials can be improved and yield is also improved, so that the memory element can be provided at low cost. | 2010-11-11 |
20100283025 | Phase change devices - A phase change device includes a native oxide grown on the surface of a first phase change alloy layer. The native oxide is punched through during the first electrical pulse applied between the device electrodes. An aperture created in the native oxide limit a region of localized heating during the device programming. A method for the phase change device fabrication includes a native oxide formation. | 2010-11-11 |
20100283026 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A first wire layer ( | 2010-11-11 |
20100283027 | MULTI-VALUE RECORDING PHASE-CHANGE MEMORY DEVICE, MULTI-VALUE RECORDING PHASE-CHANGE CHANNEL TRANSISTOR, AND MEMORY CELL ARRAY - A multi-value recording phase-change memory device that can stably record multi-value information, and that can reproduce information with high reliability, comprises a first electrode layer | 2010-11-11 |
20100283028 | NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAME - An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure. | 2010-11-11 |
20100283029 | Programmable resistance memory and method of making same - A memory includes multiple layers of deposited memory material. An etch is performed on at least one layer of deposited memory material prior to the deposition of a subsequent layer of memory material. | 2010-11-11 |
20100283030 | MEMORY DEVICES AND METHODS OF FORMING THE SAME - Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of adjacent memory cells are vertically offset and positioned on opposite sides of the memory device. Also disclosed are memory devices having a plurality of memory cells, with each memory cell including first and second electrodes having different widths. Adjacent memory cells have the first and second electrodes offset on vertically opposing sides of the memory device. Methods of forming the memory devices are also disclosed. | 2010-11-11 |
20100283031 | BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME - A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost. | 2010-11-11 |
20100283032 | METHOD FOR FORMING A SEMIDCONDUCTOR STRUCTURE - Method for Forming a Semiconductor Structure A method and apparatus for applying a carrier fluid ( | 2010-11-11 |
20100283033 | CARBIDE NANOSTRUCTURES AND METHODS FOR MAKING SAME - A structure includes a substrate and a metallized carbon nano-structure extending from a portion of the substrate. In a method of making a metallized carbon nanostructure, at least one carbon structure formed on a substrate is placed in a furnace. A metallic vapor is applied to the carbon nanostructure at a preselected temperature for a preselected period of time so that a metallized nanostructure | 2010-11-11 |
20100283034 | Concentration - gradient alloyed semiconductor quantum dots, LED and white light applications - The present invention involves concentration-gradients alloyed quantum dots that have shell modifications and ligands that lower the barrier for electronic quantum dot activation, and electronic and photonic applications of such quantum dots. The present invention also describes emissive layers using such quantum dots in electronic applications. | 2010-11-11 |
20100283035 | LIGHT EMITTING DEVICE - A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer. | 2010-11-11 |
20100283036 | Quantum dot light enhancement substrate and lighting device including same - A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein. | 2010-11-11 |
20100283037 | CORE-SHELL QUANTUM DOT FLUORESCENT FINE PARTICLES - Disclosed is an ultraviolet fluorescent material having high light emission efficiency, wherein the peak wavelength of ultraviolet light to be emitted can be controlled by having a quantum dot structure wherein a fine crystal of zinc oxide having an average diameter of 1-10 nm serves as a core, and the surface of the zinc oxide fine crystal is covered with at least one of LiGaO | 2010-11-11 |
20100283038 | POLYMER MATERIAL AND DEVICE USING THE SAME - A polymer material comprising a composition containing a fluorescent conjugated polymer (A) and a phosphorescent compound (B) or comprising a polymer having the structure of (A) and the structure of (B) in the same molecule, wherein the following conditions (1), (2) and (3) are satisfied:
| 2010-11-11 |
20100283039 | ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICE - An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector. | 2010-11-11 |
20100283040 | SELENOPHENES AND SELENOPHENE-BASED POLYMERS, THEIR PREPARATION AND USES THEREOF - This invention is directed to selenophene compounds, selenophene-based polymers (polyselenophene), processes for the preparation of the same and uses thereof. The polyselenophenes of this invention have high conductivity and can be used as electrodes in various devices such as in electrochromic devices, batteries, solar cells, optical amplifiers, organic light emitting diodes, and the like. | 2010-11-11 |
20100283041 | ORGANIC THIN FILM TRANSISTOR - An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature. | 2010-11-11 |
20100283042 | DEVICES HAVING HIGH DIELECTRIC CONSTANT, IONICALLY-POLARIZABLE MATERIALS - An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation. | 2010-11-11 |
20100283043 | ORGANIC EL ELEMENT - An organic electroluminescence device includes an anode, a cathode, and an organic thin-film layer interposed between the anode and the cathode. The organic thin-film layer includes a phosphorescent-emitting layer containing a host and a phosphorescent dopant, and an electron transporting layer that is provided closer to the cathode than the phosphorescent-emitting layer. The host contains a substituted or unsubstituted polycyclic fused aromatic skeleton. | 2010-11-11 |
20100283044 | ORGANIC TRANSISTOR, METHOD FOR PRODUCING ORGANIC TRANSISTOR, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC EQUIPMENT - An organic transistor includes: a source electrode, a drain electrode, an organic semiconductor film provided between the source electrode and the drain electrode, a gate electrode, and a gate dielectric film provided between the organic semiconductor film and the gate electrode, the gate dielectric film including a first gate dielectric film in contact with the gate electrode and a second gate dielectric film in contact with the organic semiconductor film, the second gate dielectric film having a hydrocarbon compound containing carbon and hydrogen atoms. | 2010-11-11 |
20100283045 | ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides an organic electroluminescent element having extended life. The present invention is an organic electroluminescent element having a pair of electrodes, and an organic light-emitting layer that contains a polymer light-emitting material and is sandwiched by the pair of electrodes, the organic electroluminescent element comprising: a first nanoparticle layer containing electron-transport metal oxide nanoparticles and hole-transport metal oxide nanoparticles, between the organic light-emitting layer and one of the pair of electrodes; and a second nanoparticle layer containing electron-transport metal oxide nanoparticles and hole-transport metal oxide nanoparticles, between the organic light-emitting layer and the other of the pair of electrodes. | 2010-11-11 |
20100283046 | ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides an organic electroluminescent element having excellent electron injection properties and high resistance to external environmental factors, and providing buffer effects in transparent electrode formation. The present invention is an organic electroluminescent element having an anode, a cathode, and a light-emitting layer sandwiched between the anode and the cathode, the organic electroluminescent element comprising a nanoparticle layer containing metal oxide nanoparticles, between the light-emitting layer and the cathode. | 2010-11-11 |
20100283047 | PERYLENE-IMIDE SEMICONDUCTOR POLYMERS - Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 2010-11-11 |
20100283048 | CMOS image sensor and method of manufacturing the same - Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved. | 2010-11-11 |
20100283049 | OXIDE SEMICONDUCTOR DEVICE INCLUDING INSULATING LAYER AND DISPLAY APPARATUS USING THE SAME - Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4×10 | 2010-11-11 |
20100283050 | FLAT PANEL DISPLAYS COMPRISING A THIN-FILM TRANSISTOR HAVING A SEMICONDUCTIVE OXIDE IN ITS CHANNEL AND METHODS OF FABRICATING THE SAME FOR USE IN FLAT PANEL DISPLAYS - Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask. | 2010-11-11 |
20100283051 | MONITOR CELL AND MONITOR CELL PLACEMENT METHOD - The present invention relates to a monitor cell ( | 2010-11-11 |
20100283052 | Metrology Systems and Methods for Lithography Processes - Metrology systems and methods for lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a mask having a plurality of corner rounding test patterns formed thereon. A first semiconductor device is provided, and a layer of photosensitive material of the first semiconductor device is patterned with a plurality of corner rounding test features using the mask and a lithography process. An amount of corner rounding of the lithography process is measured by analyzing the plurality of corner rounding test features relative to other of the plurality of corner rounding test features formed on the layer of photosensitive material of the semiconductor device. The lithography process or the mask is altered in response to the amount of corner rounding measured, and a second semiconductor device is provided. The second semiconductor device is affected using the altered lithography process or the altered mask. | 2010-11-11 |
20100283053 | NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATURE - In embodiments of the invention, a method of forming a monolithic three-dimensional memory array is provided, the method including forming a first memory level that includes a plurality of memory cells, each memory cell comprising a plurality of conductors comprising aluminum or copper, and forming a silicon diode in each memory cell, wherein the silicon diode is formed at temperatures compatible with the conductors. The silicon diode may be formed using a hot wire chemical vapor deposition technique, for example. Other aspects are also described. | 2010-11-11 |
20100283054 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There is provided a method for manufacturing a flexible semiconductor device characterized by comprising (i) a step of forming an insulating film on the upper surface of metal foil, (ii) a step of forming an extraction electrode pattern on the upper surface of the metal foil, (iii) a step of forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the extraction electrode pattern, (iv) a step of forming a sealing resin layer on the upper surface of the metal foil in such a manner that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) a step of forming electrodes by etching the metal foil, wherein the metal foil is used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). A TFT element can be fabricated by a simple process because the metal foil serving as the support need not be finally stripped off. Further, a high-temperature process can be introduced to the fabrication of the insulating film and the semiconductor layer because the metal foil is used as the support, whereby the TFT characteristic is improved. | 2010-11-11 |
20100283055 | TFT SUBSTRATE AND TFT SUBSTRATE MANUFACTURING METHOD - An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; a gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film. | 2010-11-11 |
20100283056 | DISPLAY APPARATUS, LIQUID CRYSTAL DISPLAY APPARATUS, ORGANIC EL DISPLAY APPARATUS, THIN-FILM SUBSTRATE, AND METHOD FOR MANUFACTURING DISPLAY APPARATUS - A liquid crystal display apparatus ( | 2010-11-11 |
20100283057 | PIXEL STRUCTURE - A pixel structure is provided. A data line and a scan line are disposed over a substrate. A first, a second, and a third thin film transistors (TFT) are electrically connected with the data line and the scan line respectively. A first width-to-length ratio, a second width-to-length ratio and a third width-to-length ratio of the first, second and third TFTs are the same. An impedance layer and the first TFT are connected in series. A first, a second, and a third pixel electrodes are electrically connected with the first, the second and the third TFTs respectively. A first, a second, and a third common line are disposed below the first, second and third pixel electrodes respectively. The first and second common lines are electrically connected to a first voltage and the third common line is electrically connected to a second voltage. | 2010-11-11 |
20100283058 | ARRAY SUBSTRATE FOR A LIQUID CRYSTAL DISPLAY DEVICE WITH THIN FILM TRANSISTOR HAVING TWO DRAIN ELECTRODE PATTERNS AND MANUFACTURING METHOD OF THE SAME - An array substrate for a liquid crystal display device includes gate and data lines crossing on a substrate, common lines parallel to and between the gate lines, thin film transistors at crossing portions of the gate and data lines, and a pixel electrode. The common lines define pixel regions, which are each divided into first and second regions by the corresponding gate line. The thin film transistors each include a gate electrode in a first direction, a semiconductor layer on the gate electrode, and source and drain electrodes on the semiconductor layer in a second direction. The source and drain electrodes cross the gate electrode in each of the first and second regions. The pixel electrode is connected to the drain electrode. | 2010-11-11 |
20100283059 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: an insulating substrate; a stepwise layer arranged on the insulating substrate and having an end portion whose inclination angle is equal to or greater than 60°; an insulating layer formed on the insulating substrate and the stepwise layer so as to be elevated on the stepwise layer; a first semiconductor layer arranged at a portion adjacent to the elevated insulating layer; and a second semiconductor layer structured with a material identical to that of the first semiconductor layer, and formed in an island shape on the elevated insulating layer. | 2010-11-11 |
20100283060 | Field effect transistor - A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance. | 2010-11-11 |
20100283061 | HIGH TEMPERATURE GATE DRIVERS FOR WIDE BANDGAP SEMICONDUCTOR POWER JFETS AND INTEGRATED CIRCUITS INCLUDING THE SAME - Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described. | 2010-11-11 |
20100283062 | OPTOELECTRONIC SYSTEM - An embodiment of the invention discloses an optoelectronics system and a method of making the same. The method includes steps of providing a temporary substrate; providing un-packaged optoelectronic elements on the temporary substrate; forming a trench between two of the un-packaged optoelectronic elements; providing an adhesive material to fill the trench and cover the optoelectronic elements; providing a permanent substrate on the adhesive material; and removing the temporary substrate. | 2010-11-11 |
20100283063 | LIGHT RECEIVING AND EMITTING DEVICE - A light receiving and emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer, the light receiving unit includes a light-absorbing layer, at least part of the active layer forms a gain region on a current path between the first electrode and the second electrode, the gain region is provided from a first side face of the active layer to a second side face parallel to the first side face so as to be inclined with respect to a perpendicular of the first side face as seen in a planar view, a light generated in the gain region is divided, at least one of an edge face on the first side face and an edge face on the second side face, the edge faces of the gain region, into a light emitted to an outside and a reflected light, and the reflected light is received by the light receiving unit. | 2010-11-11 |
20100283064 | NANOSTRUCTURED LED ARRAY WITH COLLIMATING REFLECTORS - The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs. | 2010-11-11 |
20100283065 | LED DEVICE WITH A LIGHT EXTRACTING ROUGH STRUCTURE AND MANUFACTURING METHODS THEREOF - The invention relates to a light emitting diode device having a light extracting rough structure. The device includes a leadframe, one or more light emitting diode chips provided on and electrically connected to the leadframe, and a lens configured to encapsulate the one or more light emitting diode chips, the lens having a surface including a micro-roughness structure. The micro-roughness structure of the lens has a roughness between 0.1 μm and 50 μm. The invention also relates to a method of manufacturing a light emitting diode device having a light extracting rough structure. | 2010-11-11 |
20100283066 | LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - A light emitting device ( | 2010-11-11 |
20100283067 | SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME - Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion. | 2010-11-11 |
20100283068 | Colour Optoelectronic Device - An organic light emitting diode microdisplay device comprises a substrate including active circuitry ( | 2010-11-11 |
20100283069 | Optical systems fabricated by printing-based assembly - The present invention provides optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchability. Optical systems of the present invention include, however, devices and device arrays provided on conventional rigid or semi-rigid substrates, in addition to devices and device arrays provided on flexible, shapeable and/or stretchable substrates. | 2010-11-11 |
20100283070 | Nitride semiconductor light emitting device and method of manufacturing the same - There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad. | 2010-11-11 |
20100283071 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic electroluminescent display device may comprise forming transistors on a substrate, forming a lower electrode over an insulating layer, forming an insulating layer on the transistors, the lower electrode being coupled to a source or a drain of each of the transistors, forming a bank layer on the lower electrode, the bank layer having openings to expose part of the lower electrode, forming a bus electrode on the bank layer, forming an organic light-emitting layer to cover the lower electrode, the bank layer, and the bus electrode, patterning the organic light-emitting layer using a laser, thereby exposing the bus electrode placed on the bank layer, and forming an upper electrode on the organic light-emitting layer so that the upper electrode comes into contact with the exposed bus electrode. | 2010-11-11 |
20100283072 | Quantum dot-based light sheets useful for solid-state lighting - A quantum dot-based light sheet or film is disclosed. In certain embodiments, a quantum dot-based light sheet includes one or more films or layers comprising quantum dots (QD) disposed on at least a portion of a surface of a waveguide and one or more with LEDs optically coupled to the waveguide. The film or layer can be continuous or discontinuous. The film or layer can optionally further include a host material in which the quantum dots are dispersed. A solid state light-device including a quantum-dot based sheet or film or optical component disclosed herein is also provided. | 2010-11-11 |
20100283073 | Thin-Film LED Having a Mirror Layer and Method for the Production Thereof - A thin-film LED comprising a barrier layer ( | 2010-11-11 |
20100283074 | LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER - A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter. | 2010-11-11 |
20100283075 | LED WITH ENHANCED LIGHT EXTRACTION - A light emitting device having a plurality of light extracting elements defined on an upper surface of a semiconductor layer of the device, wherein the light extracting elements are adapted to couple light out of the device and to modify the far field emission profile of the device. Each element comprises an elongate region having a length at least twice its width and also greater than the effective dominant wavelength of light generated in the device. The elongate region extends orthogonal to the upper surface but not into the light emitting region of the device and may be oriented at an angle of less than 45° relative to one of a pair of basis axis defining a plane parallel to the semiconductor layer. Each elongate region is spatially separated from neighbouring elongate regions such that it perturbs light generated in the light emitting region independently of the neighbouring regions. | 2010-11-11 |
20100283076 | COATED PHOSPHOR PARTICLES WITH REFRACTIVE INDEX ADAPTION - The invention relates to coated phosphor particles comprising luminescent particles and at least one, preferably substantially transparent, metal, transition-metal or semimetal oxide coating, and to a process for the production thereof. | 2010-11-11 |
20100283077 | LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES - Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face. | 2010-11-11 |
20100283078 | TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE - An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections. | 2010-11-11 |
20100283079 | SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device package including a main body including a supporting member and an outside member on the supporting member; at least one semiconductor light emitting device disposed on the supporting member in which the outside member at least partially surrounds the at least one semiconductor light emitting device; first and second electrodes, at least one electrode of the first and second electrodes at least partially extending under the at least one semiconductor light emitting device; a metallic member disposed under the at least one semiconductor light emitting device and extending beyond outside edges of the at least one semiconductor light emitting device; a first molding part surrounded by the outside member and covering the at least one semiconductor light emitting device; and a second molding part disposed on the first molding part, the second molding part formed in a domed shape. Further, the first and second electrodes also extend to a bottom surface of the supporting member. | 2010-11-11 |
20100283080 | EXTENSION OF CONTACT PADS TO THE DIE EDGE VIA ELECTRICAL ISOLATION - Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductivity type layer. Electrically insulation regions are formed in or next to at least portions of the first conductivity type layer along the die edges. A first conductivity bond pad layer is formed to electrically contact the first conductivity type layer and extend over the singulation streets between the LED dies. A second conductivity bond pad layer is formed to electrically contact the second conductivity type layer, and extend over the singulation streets between the LED dies and the electrically insulated portions of the first conductivity type layer. The LED dies are mounted to submounts and the LED dies are singulated along the singulation streets between the LED dies. | 2010-11-11 |
20100283081 | LIGHT-EMITTING DEVICE - A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack. | 2010-11-11 |
20100283082 | Bipolar Transistor with Depleted Emitter - This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base becomes small. This concept also applies to the diodes or rectifiers. With depleted junction, this results in very fast switching of the diodes and transistors. Another novel structure utilizes the strip base structure to achieve lower on resistance of the bipolar transistor. The emitter region of the strip base can be a normal emitter or depleted emitter. | 2010-11-11 |
20100283083 | Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor - Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region. | 2010-11-11 |
20100283084 | BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME - The bipolar transistor includes a heterojunction intrinsic base layer epitaxially grown on a collector layer. The intrinsic base layer is disposed on the collector layer surrounded by an isolation layer, and an N-type impurity layer is formed in a surface portion of the collector layer. The impurity concentration of the N-type impurity layer is higher than the impurity concentration of the collector layer under the N-type impurity layer. Between the N-type impurity layer and the intrinsic base layer, an epitaxially grown layer is formed, where the epitaxially grown layer is lower in impurity concentration than the N-type impurity layer and the intrinsic base layer. | 2010-11-11 |
20100283085 | Massively Parallel Interconnect Fabric for Complex Semiconductor Devices - An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the time and cost for development and going from prototyping to production, reducing cost per die, reducing or eliminating NRE, and increasing performance. Other embodiments of this invention enable debugging complex SoC through large contact points provided through the MPIF, provide for multi-platform functionality, and enable incorporating FGPA core in ASIC platform through the MPIF. | 2010-11-11 |
20100283086 | METAL OPTICAL FILTER CAPABLE OF PHOTO LITHOGRAPHY PROCESS AND IMAGE SENSOR INCLUDING THE SAME - Disclosed is a metal optical filter capable of a photo-lithography process and an image sensor including the same, and more particularly, a metal optical filter capable of a photo-lithography process, which can quite freely adjust the transmission band and transmittance thereof, even with a small number of metal layers, and simultaneously, can be actually applied in a CMOS process because it is possible to achieve nanoscale patterning by the photo-lithography process, and an image sensor including the metal optical filter. The metal optical filter capable of a photo-lithography process includes a plurality of metal rods arranged in parallel with each other at an equal nanoscale interval; and an insulation material formed between the plurality of metal rods and on upper and lower surfaces of the plurality of metal rods, wherein the metal rod is formed to comprise an upper Ti layer, an Al layer, and a lower TiN layer. | 2010-11-11 |
20100283087 | Electric Component - An electric component comprising a sensor and/or actuator chip with a substrate on which a passivating layer and a sensor and/or actuator structure consisting of an active surface area is arranged. The chip is surrounded by an encapsulation having an opening which forms an access to the at least one active surface area. A layer stack is arranged on the substrate, said stack of layers comprising from the passivating layer to the substrate at least one first strip conductor layer, a first electric insulating layer, a second strip conductor layer and a second electric insulating layer. The first conductor strip layer is fully arranged outside the area of the chip covered by the opening. At least one conductor strip of the second conductor strip layer is connected to the sensor and/or actuator structure. | 2010-11-11 |
20100283088 | SUBSTRATE-LEVEL INTERCONNECTION AND MICRO-ELECTRO-MECHANICAL SYSTEM - A micro-electro mechanical system (MEMS) is disclosed, which comprises a substrate; at least one transistor formed on the substrate and electrically connected with a contact plug; at least one MEMS device; and a local interconnection line at the same level of the contact plug, through which the MEMS device is coupled to the transistor. | 2010-11-11 |
20100283089 | METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING - Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided which includes a first single-crystal semiconductor region including a first semiconductor material, the first semiconductor region having a <110> crystal orientation. An epitaxial layer including the first semiconductor material is grown on the first semiconductor region, the epitaxial layer having the <110> crystal orientation. The substrate is then annealed with the epitaxial layer at a temperature greater than 1100 degrees Celsius in an ambient including hydrogen, whereby the step of annealing reduces stacking faults in the epitaxial layer. | 2010-11-11 |
20100283090 | MAGNETIC NANOTRANSISTOR - The present invention discloses methods and processes for producing magnetic nanotransistors containing carbon nanotubes. The nanotube is attached to at least one magnetic particle, the nanotube is then placed in between the two fixed magnetic moments, and subjected to an external magnetic field. The current passing through the nanotube can be controlled using the external magnetic field. | 2010-11-11 |
20100283091 | SEMICONDUCTOR DEVICE HAVING A REDUCED BIT LINE PARASITIC CAPACITANCE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a reduced bit line parasitic capacitance and a method of making same is presented. The semiconductor device includes a first, second, third, and fourth interlayer dielectric layers, first and second bit lines, first and second landing plug and first and second storage node contacts. An optional capacitor may be added to complete a CMOS configuration for the semiconductor device. The storage node contacts traverse through the interlayer dielectric layer and are electrically coupled to their respective landing plug contacts. The storage node contacts are deliberately offset, relative to the center of the corresponding landing plug contacts, at a predetermined distance in a direction away from the first bit line. This offsetting aids reducing the parasitic capacitance between the bit line and a storage node. | 2010-11-11 |