46th week of 2021 patent applcation highlights part 64 |
Patent application number | Title | Published |
20210359145 | SINGLE-STEP METAL BOND AND CONTACT FORMATION FOR SOLAR CELLS - A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer. | 2021-11-18 |
20210359146 | HIGHLY-TEXTURED THIN FILMS - A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost. | 2021-11-18 |
20210359147 | IMAGING DEVICE BASED ON COLLOIDAL QUANTUM DOTS - An imaging device ( | 2021-11-18 |
20210359148 | SERIES-CONNECTED SOLAR CELL MODULE - A series-connected solar cell module is provided, which includes multiple solar cell units. each of the multiple solar cell units comprises multiple solar cells. In each of the multiple solar cell units, a back surface of one of two adjacent solar cells is electrically connected to a front surface of the other of the two adjacent solar cells through a conductive material. A first insulating layer and a second insulating layer are provided at positions where the conductive material is in close contact with the two adjacent solar cells. Therefore, adjacent solar cells can be arranged in close contact with each other, to achieve a seamless contact, thereby increasing the effective area of the series-connected solar cell module. | 2021-11-18 |
20210359149 | SOLAR MODULE TRACKER SYSTEM OPTIMIZED FOR BIFACIAL SOLAR PANELS - A solar tracker including solar modules which include, a frame and a plurality of bifacial solar cells supported by the frame. The solar modules also including a gap formed between two or more of the solar cells, the gap being formed proximate a centerline of the solar modules and configured to a allow passage of light from a first side of the solar modules to a second side of a solar modules, where the light passing through the gap is reflected back onto the plurality of bifacial solar cells and converted to electrical energy. | 2021-11-18 |
20210359150 | Tandem solar cells having a top or bottom metal chalcogenide cell - Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination. | 2021-11-18 |
20210359151 | TRUE HOT-CARRIER SOLAR CELL AND HOT-CARRIER TRANSFER - A photovoltaic device configured to substantially avoid radiative recombination of photo-generated carriers, reduce loss of energy of the photo-generated carriers through the phonon emission, extract photo-generated carriers substantially exclusively from the multi-frequency satellite valley(s) of the bandstructure of the used semiconductor material as opposed to the single predetermined extremum of the bandstructure. Methodologies of fabrication and operation of such a device. | 2021-11-18 |
20210359152 | METHODS AND SYSTEMS FOR USE WITH PHOTOVOLTAIC DEVICES - According to embodiments provided herein, the performance of photovoltaic device can be improved by rapidly heating an absorber layer of a device in open-circuit to a high temperature for a short period of time followed by rapid quenching. The rapid heating may be accomplished by one or more pulses of high intensity electromagnetic energy. The energy may be visible light. The energy may be absorbed primarily in the absorber layer, such that the absorber layer is preferentially heated, promoting chemical reactions of dopant complexes. The dopant chemical reactions disrupt compensating defect complexes that have formed in the device, and regenerate active carriers. | 2021-11-18 |
20210359153 | BACK PLATE AND METHOD FOR FLUID-ASSISTED ASSEMBLY OF MICRO-LEDS THEREON - A back plate for rapid and fluid-assisted assembly of micro light emitting elements thereon includes a substrate with a driving circuit, and blocking walls made to protrude from a top surface of the substrate. The top surface of the substrate defines grooves for accommodating and powering micro light emitting elements. Each of the blocking walls semi-surrounds one groove and defines a notch. The notches defined by each blocking wall all face a single direction and the blocking walls and notches impede and gather micro light emitting elements which are made to flow in a fluid suspension and render them much more likely to tumble into the groove. A method for fluid-assisted assembly is also disclosed. | 2021-11-18 |
20210359154 | BONDING METHOD OF MICRO-LIGHT EMITTING DIODE CHIP - The bonding method of a micro-light emitting diode chip includes providing a backplane, and two solder columns are formed on electrodes of each chip bonding area of the backplane; forming a glue groove in the chip bonding area, forming a glue layer in the glue groove to make the glue layer cover tops of the solder columns; moving the chip to make positive and negative electrodes of the chip aligned with the two solder columns respectively; heating the backplane to make the glue layer melt into liquid glue; making positive and negative electrodes of the chip immersed in the liquid glue; after cooling to a room temperature, making the positive electrode and the negative electrode of the chip adhered to the two solder columns respectively; removing a transfer head; soldering the positive electrode and the solder column adhered together, and the negative electrode and the solder column adhered together. | 2021-11-18 |
20210359155 | IDENTIFYING AND REPAIRING DEFECTS MICRO-DEVICE INTEGRATED SYSTEM - What is disclosed are structures and methods for testing and repairing emissive display systems. Systems are tested with use of temporary electrodes which allow operation of the system during testing and are removed afterward. Systems are repaired after identification of defective devices with use of redundant switching from defective devices to functional devices provided on repair contact pads. Time varying signals coupled to a capacitor are used as well. | 2021-11-18 |
20210359156 | TRANSFER METHOD, DISPLAY DEVICE, AND STORAGE MEDIUM - Provided are a transfer method, a display device, and a storage medium. The transfer method includes: performing partial cutting on preset scribe lines ( | 2021-11-18 |
20210359157 | DISPLAY DEVICE AND METHOD FOR FABRICATING SAME - The present disclosure provides a display device and a method for fabricating the same. The display device comprises an array substrate and a plurality of micro light emitting diode devices arranged in an array on the array substrate. Each micro light emitting diode device comprises a first substrate, a second substrate disposed on the first substrate, and a micro light emitting diode. Light extraction efficiency of the micro light emitting diode is improved by providing a reflective hole on the second substrate and disposing the micro light emitting diode in the reflective hole. | 2021-11-18 |
20210359158 | SEMICONDUCTOR DEVICE - A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first Group III-V semiconductor layer between the active region and the electron blocking structure; and a second Group III-V semiconductor layer between the electron blocking structure and the second semiconductor layer; wherein the first Group III-V semiconductor layer and the second Group III-V semiconductor layer each includes indium, aluminum and gallium, the first Group III-V semiconductor layer has a first indium content, the second Group III-V semiconductor layer has a second indium content, and the second indium content is less than the first indium content. | 2021-11-18 |
20210359159 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF PRODUCING THE SAME - Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting device | 2021-11-18 |
20210359160 | USING A COMPLIANT LAYER TO ELIMINATE BUMP BONDING - Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate. | 2021-11-18 |
20210359161 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - The semiconductor light-emitting element has an n-type semiconductor layer; an active layer provided on a first upper surface of the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode provided in contact with the upper surface of the p-type semiconductor layer; a p-side current diffusion layer provided on the p-side contact electrode in a region narrower than a formation region of the p-side contact electrode; a p-side pad electrode provided on the p-side current diffusion layer; an n-side contact electrode provided in contact with a second upper surface of the n-type semiconductor layer; an n-side current diffusion layer provided on the n-side contact electrode over a region wider than a formation region of the n-side contact electrode, and including a TiN layer; and an n-side pad electrode provided on the n-side current diffusion layer. | 2021-11-18 |
20210359162 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller. | 2021-11-18 |
20210359163 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a first semiconductor layer containing a first conductivity type nitride semiconductor; an active layer containing a nitride semiconductor including Ga or In; an electron barrier layer containing a nitride semiconductor including at least Al, and being of a second conductivity type; and a second semiconductor layer containing a second conductivity type nitride semiconductor. The electron barrier layer includes a region where an Al composition ratio increases monotonically toward the second semiconductor layer. A maximum impurity concentration position of the second conductivity type in the electron barrier layer is located between an interface on an active layer side of the electron barrier layer and an intermediate position between a maximum Al composition ratio position of the electron barrier layer in the region and an interface on an active layer side of the electron barrier layer. | 2021-11-18 |
20210359164 | HETEROSTRUCTURE AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME - Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors. | 2021-11-18 |
20210359165 | LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE INCLUDING SAME - A light emitting device may include at least one first electrode and at least one second electrode disposed on different layers on a substrate; a first insulating layer disposed between the first electrode and the second electrode; and at least one light emitting diode electrically connected between the at least one first electrode and the second electrode. | 2021-11-18 |
20210359166 | DISPLAY DEVICE - A display device includes a first electrode, a second electrode spaced apart from the first electrode and facing the first electrode, a first insulating layer disposed to at least partially cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer, and a light-emitting element disposed on the second insulating layer between the first electrode and the second electrode, wherein at least a part of a lower surface of the light-emitting element is chemically bonded to the second insulating layer. | 2021-11-18 |
20210359167 | PIXEL AND DISPLAY DEVICE INCLUDING THE SAME - A pixel includes a first electrode; a second electrode surrounding at least a portion of the first electrode; a plurality of light emitting elements between the first electrode and the second electrode; a first contact electrode on the first electrode, the first contact electrode electrically connecting the first electrode and the plurality of light emitting elements; a second contact electrode on the second electrode, the second contact electrode electrically connecting the second electrode and the plurality of light emitting elements; and an intermediate electrode on the first electrode and the second electrode, the intermediate electrode comprising a first area overlapping the first electrode and a second area overlapping the second electrode, the first area and the second area being integrally connected to each other. | 2021-11-18 |
20210359168 | MICRO LIGHT EMITTING DIODE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides a manufacturing method of a micro light emitting diode display panel. The manufacturing method comprises following steps of: forming an array substrate; forming a patterned photoresist layer on the array substrate, wherein the photoresist layer at least partially exposes the array substrate; coating a solder material layer on the patterned photoresist layer and the array substrate; developing the solder material layer to form a patterned solder material layer; and forming a micro light emitting diode on the solder material layer to form the micro light emitting diode display panel. In the above manner, the present invention can improve a manufacturing accuracy of the patterned solder material layer, and it can be made repeatedly without the need of a steel mesh, which improves a reliability of a process. | 2021-11-18 |
20210359169 | Radiation Emitting Component and Method for Producing a Radiation Emitting Component - In an embodiment a radiation emitting component includes a radiation emitting semiconductor chip having a top surface and at least one side surface, wherein the radiation emitting semiconductor chip is configured to emit primary radiation, a carrier including a recess, a first conversion element and a second conversion element, wherein the first conversion element is arranged on the top surface of the radiation emitting semiconductor chip, wherein the second conversion element is arranged on the at least one side surface of the radiation emitting semiconductor chip, wherein the second conversion element does not project beyond a bottom surface of the first conversion element in a vertical direction, wherein the recess surrounds a first region on a top surface of the carrier, and wherein the radiation emitting semiconductor chip with the first conversion element and the second conversion element is arranged in the first region on the carrier. | 2021-11-18 |
20210359170 | OPTOELECTRONIC DEVICE COMPRISING AN ARRAY OF PHOTOLUMINESCENT BLOCKS AND METHOD FOR THE PRODUCTION OF SAME - An optoelectronic device including a support, at least hydrophilic photoluminescent blocks including hydrophilic photoluminescent particles covering first areas of the support and hydrophobic photoluminescent blocks including hydrophobic photoluminescent particles covering second areas of the support, the hydrophilic photoluminescent blocks being in contact with a hydrophilic material in the first areas and the hydrophobic photoluminescent blocks being in contact with a hydrophobic material in the second areas. | 2021-11-18 |
20210359171 | ADHESIVE FILM TRANSFER COATING AND USE IN THE MANUFACTURE OF LIGHT EMITTING DEVICES - A converter layer bonding device, and methods of making and using the converter layer bonding device are disclosed. A converter layer bonding device as disclosed herein includes a release liner and an adhesive layer coating the release liner, the adhesive layer is solid and non-adhesive at room temperature, and is adhesive at an elevated temperature above room temperature. | 2021-11-18 |
20210359172 | LIGHT-EMITTING DEVICE - A light-emitting device includes light-emitting elements each having a light-extracting surface, light-transmissive members and a covering member, The light-transmissive members each has an upper surface and a lower surface facing the light-extracting surface of at least one of the light-emitting elements. The covering member integrally covers lateral surfaces of the light-emitting elements and lateral surfaces of the light-transmissive members such that a pair of electrodes of the light-emitting elements are exposed from the covering member at a lower surface of the covering member. At a lower surface of the light-emitting device, the light-emitting elements are arranged in a plurality of columns and a plurality of rows, an alignment direction of the electrodes in one of the light-emitting elements is rotated by 90° in a prescribed. direction from an alignment direction of the electrodes in an adjacent one of the light-emitting elements in one of a column direction and a row direction. | 2021-11-18 |
20210359173 | PACKAGED LEDS WITH PHOSPHOR FILMS, AND ASSOCIATED SYSTEMS AND METHODS - Packaged LEDs with phosphor films, and associated systems and methods are disclosed. A system in accordance with a particular embodiment of the disclosure includes a support member having a support member bond site, an LED carried by the support member and having an LED bond site, and a wire bond electrically connected between the support member bond site and the LED bond site. The system can further include a phosphor film carried by the LED and the support member, the phosphor film being positioned to receive light from the LED at a first wavelength and emit light at a second wavelength different than the first. The phosphor film can be positioned in direct contact with the wire bond at the LED bond site. | 2021-11-18 |
20210359174 | Method for Producing Optoelectronic Semiconductor Devices and Optoelectronic Semiconductor Device - In an embodiment a method includes providing a light-emitting diode chip and a phosphor body, applying a sacrificial layer to a top side of the phosphor body only, placing the phosphor body onto the light-emitting diode chip, molding an encapsulation body directly around the light-emitting diode chip and the phosphor body by a film assisted molding, wherein at least in places a top face of the sacrificial layer facing away from the phosphor body remains unsealed with a molding film, and removing the sacrificial layer so that the top side of the phosphor body is free of the sacrificial layer. | 2021-11-18 |
20210359175 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein. | 2021-11-18 |
20210359176 | LIGHT-EMITTING DEVICES AND METHODS FOR MANUFACTURING THE SAME - A light-emitting device is provided. The light-emitting device includes a first substrate. The light-emitting device also includes a second substrate including a light-shielding structure. The light-emitting device further includes a first light-emitting module and a second light-emitting module being adjacent to each other. The first light-emitting module and the second light-emitting module are disposed between the first substrate and the second substrate. The first light-emitting module and the second light-emitting module are spaced apart by a gap, and the light-shielding structure at least partially covers the gap in a top view direction of the light-emitting device. | 2021-11-18 |
20210359177 | LED lamp and method for increasing lumens thereof - The present invention provides a light-emitting diode lamp with increased lumens. The increased lumens to the LED lamp consists of a substrate body, at least one reflective cup, the reflective cup is disposed on the substrate body, at least one light-emitting element disposed on the substrate body and electrically connected to the substrate body, with at least one fluorescent unit, wherein, the fluorescent unit further includes a top layer of a light-emitting element, a side layer of a light-emitting element, a reflective cup surface layer and a substrate body surface layer. Light-emitting diode lamp increases the brightness. It is superior to the currently known light-emitting diode lamp. | 2021-11-18 |
20210359178 | COMPONENT WITH A REFLECTIVE HOUSING AND METHOD FOR PRODUCING SUCH A COMPONENT - In one embodiment, the component comprises a light reflective housing. The housing comprises a matrix material of a light-transmittive plastic and particles of a glass ceramic embedded therein. The particles comprise a mean diameter of at least 5 μm. The particles comprise a glass matrix and crystallites. A refractive index difference between the glass matrix and the crystallites is at least 0.5, and the crystallites exhibit a mean diameter between 20 nm and 0.5 μm, inclusive. | 2021-11-18 |
20210359179 | LIGHT-EMITTING DEVICE WITH CONFIGURABLE SPATIAL DISTRIBUTION OF EMISSION INTENSITY - A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically. | 2021-11-18 |
20210359180 | PIXEL ARRAY SUBSTRATE - A pixel array substrate includes a base, pixel structures, first bonding pads, first wirings, and a first testing element. The pixel structures are disposed on an active area of a first surface of the base. The first bonding pads are disposed on a peripheral region of the first surface. Each of the first wirings is disposed on a corresponding first bonding pad, a first sidewall of the base, and a corresponding second bonding pad. The first testing element is disposed on the active area of the first surface and has a first testing line. The first testing line is electrically connected to at least one of the first bonding pads, and an end of the first testing line is substantially aligned with an edge of the base. | 2021-11-18 |
20210359181 | DISPLAY APPARATUS - A display apparatus includes a substrate having a display area and a peripheral area surrounding the display area, a first initialization voltage line on the substrate, an organic film layer on the first initialization voltage line and having a first contact hole exposing at least a portion of the first initialization voltage line, and a bridge wiring on the organic film layer corresponding to the peripheral area, and in contact with the first initialization voltage line through the first contact hole, wherein the organic film layer corresponding to the peripheral area has a groove or dummy hole, each of the groove and the dummy hole being adjacent to the first contact hole. | 2021-11-18 |
20210359182 | DRIVING SUBSTRATE, METHOD FOR PREPARING THE SAME, AND DISPLAY DEVICE - The present disclosure provides a driving substrate, a method for preparing the same, and a display device. The driving substrate includes: a base substrate; a stress buffer layer located on the base substrate; a plurality of first wirings located on a surface of the stress buffer layer away from the base substrate; a first insulating layer located on a surface of the first wiring away from the base substrate; a plurality of second wiring structures located on a surface of the first insulating layer away from the base substrate; a second insulating layer located on a surface of the second wiring structure away from the base substrate; an electronic element located on a surface of the second insulating layer away from the base substrate. | 2021-11-18 |
20210359183 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes a substrate with a first main side and a second main side. A plurality of light-emitting semiconductor chips is distributed over the first main side and over the second main side. A molding compound encloses the light-emitting semiconductor chips in a lateral direction. The molding compound levels with the light-emitting semiconductor chips in a direction away from the substrate. The molding compound has a top side facing away from the substrate. A plurality of planar electrical interconnects run on the top side and electrically connects the light-emitting semiconductor chips on their radiation exit sides facing away from the substrate. | 2021-11-18 |
20210359184 | DRIVING SUBSTRATE, METHOD FOR PREPARING THE SAME, AND DISPLAY DEVICE - The present disclosure provides a driving substrate, a method for preparing the same, and a flexible display device. The driving substrate includes: a base substrate; a first driving function layer arranged on a first surface of the base substrate, the first driving function layer including a plurality of driving thin film transistors and a plurality of signal wirings, and at least one of the plurality of signal wirings being of a single-layer structure and having a thickness greater than a threshold; a pad layer arranged on a surface of the first driving function layer away from the base substrate, the pad layer including a plurality of first pads and a plurality of second pads, and each first pad being connected to a first electrode of the corresponding driving thin film transistor and each second pad being connected to a common electrode line in the plurality of signal wirings. | 2021-11-18 |
20210359185 | DEVICE INCLUDING VIAS AND METHOD AND MATERIAL FOR FABRICATING VIAS - A device includes a glass substrate, a plurality of electronic components, a metallization layer, and a plurality of vias. The plurality of electronic components are on a first surface of the glass substrate. The metallization layer is on a second surface of the glass substrate opposite to the first surface. The plurality of vias extend through the glass substrate. At least one via is in electrical communication with an electronic component and the metallization layer. | 2021-11-18 |
20210359186 | SUBPIXEL LIGHT EMITTING DIODES FOR DIRECT VIEW DISPLAY AND METHODS OF MAKING THE SAME - A method includes transferring a first subset of the first LEDs from a first substrate to a first backplane to form first subpixels in pixel regions, transferring a first subset of the second LEDs to a second backplane and separating the first subset of the second LEDs from a second substrate to leave first vacancies on the second substrate, forming an additional electrically conductive material on a second subset of second LEDs located on the second substrate after transferring the first subset of the second LEDs to the second backplane, positioning the second substrate over the first backplane, such that the first subpixels are disposed in the first vacancies, and transferring the second subset of the second LEDs to a second subset of bonding structures on the first backplane to form second subpixels in the pixel regions, while a gap exists between the first subpixels and the second substrate. | 2021-11-18 |
20210359187 | LIGHT EMITTING DEVICE SUBSTRATE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A light emitting device substrate includes an insulating layer, a plurality of upper pads spaced apart from each other in a matrix pattern on the insulating layer, a first circuit pattern inside the insulating layer, the first circuit pattern electrically connecting some of the plurality of upper pads to each other, a second circuit pattern inside the insulating layer, the second circuit pattern being under the first circuit pattern and electrically connected to the first circuit pattern, and a plurality of lower pads spaced apart from each other under the insulating layer, a number of the plurality of lower pads being smaller than a number of the plurality of upper pads, and at least one of the plurality of lower pads being electrically connected to two or more upper pads of the plurality of upper pads via the first circuit pattern and the second circuit pattern. | 2021-11-18 |
20210359188 | LIGHT EMITTING DIODE - A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector. | 2021-11-18 |
20210359189 | METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED - A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon. | 2021-11-18 |
20210359190 | THERMOELECTRIC CONVERSION SUBSTRATE AND THERMOELECTRIC CONVERSION MODULE - A thermoelectric conversion substrate includes: an insulating substrate including a first surface on one side in a thickness direction of the insulating substrate and a second surface on an opposite side; a plurality of thermoelectric conversion units, each including a first thermoelectric member, a second thermoelectric member, and a first electrode that electrically connects the first thermoelectric member and the second thermoelectric member; and a second electrode. The insulating substrate includes at least one core insulating layer. The second electrode electrically connects the first thermoelectric member of one of the thermoelectric conversion units and the second thermoelectric member of another of the thermoelectric conversion units. The thermoelectric conversion units are electrically connected in series in a manner that the first thermoelectric member and the second thermoelectric member are alternately arranged. A stress relaxation portion is disposed between the first thermoelectric member and the second thermoelectric member. | 2021-11-18 |
20210359191 | PRECURSOR FOR USE IN MANUFACTURING SUPERCONDUCTING WIRE, PRODUCTION METHOD OF PRECURSOR, AND SUPERCONDUCTING WIRE - A precursor, which is a drawn wire product of a composite pipe, the composite pipe having: a composite wire group; a barrier layer; and a protective layer, wherein the composite wire group has: a plurality of tin wires each having at least one tin core being made of tin or a tin alloy, and a copper matrix which surrounds the at least one tin core; and a plurality of niobium wires each having a plurality of niobium cores being made of niobium or a niobium alloy, and a copper matrix which surrounds the plurality of niobium cores, the plurality of niobium wires being disposed such that each of the tin wires is surrounded by the niobium wires, the composite wire group contains titanium in an amount of from 0.38% by mass to 0.55% by mass. | 2021-11-18 |
20210359192 | HIGH DENSITY MULTI-POLED THIN FILM PIEZOELECTRIC DEVICES AND METHODS OF MAKING THE SAME - Disclosed are multi-poled piezoelectric devices with improved packing density and methods for making such multi-poled piezoelectric devices with improved packing density. The multi-poled piezoelectric devices comprise: a) a top electrode, a piezoelectric layer, and a bottom electrode fabricated on a substrate; b) vias generated by etching the piezoelectric layer, the top electrode, or both; and c) a re-distribution layer (RDL) deposited over one or more of: the top electrode, the piezoelectric layer, the bottom electrode, or the one or more vias. | 2021-11-18 |
20210359193 | VIBRATION DEVICE - A vibration device includes a tubular body with a cavity, a first opening end surface, and a second opening end surface, a piezoelectric device joined to the first opening end surface, and a translucent cover joined to the second opening end surface. The tubular body and the piezoelectric device are joined to each other with a first adhesive layer, and the tubular body and the translucent cover are joined to each other with a second adhesive layer. | 2021-11-18 |
20210359194 | PIEZOELECTRIC ACTUATOR - A piezoelectric actuator is provided, including a vibration plate, a piezoelectric layer, a plurality of individual electrodes arranged in two arrays, first and second common electrodes which have first and second facing portions facing parts of the individual electrodes and first and second connecting portions connecting the first and second facing portions respectively, and first and second wiring portions which are arranged on the vibration plate and which are connected to the first and second common electrodes respectively via first and second connecting wirings, wherein one of the first connecting wirings connects the first connecting portion and one of the first wiring portion while striding over the second connecting portion. | 2021-11-18 |
20210359195 | LAMINATED SUBSTRATE WITH PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT AND METHOD FOR MANUFACTURING THIS ELEMENT - There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K | 2021-11-18 |
20210359196 | PIEZOELECTRIC DEVICE AND FABRICATING METHOD THEREOF, AND ELECTRONIC DEVICE AND CONTROLLING METHOD THEREOF - A piezoelectric device and a fabricating method thereof, and an electronic device and a controlling method thereof, which relates to the technical field of piezoelectric devices. The piezoelectric device includes: a flexible substrate and a plurality of piezoelectric units that are provided on the flexible substrate and are arranged in an array; each of the plurality of piezoelectric units includes: a first electrode, a piezoelectric component and a second electrode that are sequentially stacked on the flexible substrate; and the piezoelectric component is made from a rigid material. The present disclosure is suitable for the fabrication of piezoelectric devices. | 2021-11-18 |
20210359197 | SCALABLE HEAT SINK AND MAGNETIC SHIELDING FOR HIGH DENSITY MRAM ARRAYS - A magnetic random access memory (MRAM) array includes a plurality of MRAM cells, each of the MRAM cells including a magnetic tunnel junction (MTJ) stack disposed on a bottom metal via connecting the MTJ stack to a bottom conductive contact in a substrate, a plurality of top conductive contacts, each of the top conductive contacts disposed on a respective one of the MTJ stacks, and a plurality of unitary structures configured as a heat sink/magnetic shield disposed on a vertical portions of each of the MRAM cells, including vertical portions of the bottom metal vias, and under a portion of each of the MTJ stacks. | 2021-11-18 |
20210359198 | MAGNETIC MEMORY DEVICE - A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate. | 2021-11-18 |
20210359199 | STRAINED FERROMAGNETIC HALL METAL SOT LAYER - A magnetic memory device includes a spin-orbit torque (SOT) induction structure which may be strained and seedless and formed with a perpendicular magnetic anisotropy. A magnetic tunnel junction (MTJ) stack is disposed over the SOT induction structure. A spacer layer may decouple layers between the SOT induction structure and the MTJ stack or decouple layers within the MTJ stack. One end of the SOT induction structure may be coupled to a first transistor and another end of the SOT induction structure coupled to a second transistor. | 2021-11-18 |
20210359200 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory device includes a magnetic track layer extending on a substrate, the magnetic track layer having a folded structure that is two-dimensionally villi-shaped, a plurality of reading units including a plurality of fixed layers and a tunnel barrier layer between the magnetic track layer and each of the plurality of fixed layers, and a plurality of bit lines extending on different ones of the plurality of reading units, the plurality of reading units being between the magnetic track layer and corresponding ones of the plurality of bit lines. | 2021-11-18 |
20210359201 | MAGNETORESISTIVE DEVICES AND METHODS THEREFOR - A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or mom dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region. | 2021-11-18 |
20210359202 | MTJ CD Variation By HM Trimming - A MTJ stack is deposited on a bottom electrode. A metal hard mask is deposited on the MTJ stack and a dielectric mask is deposited on the metal hard mask. A photoresist pattern is formed on the dielectric mask, having a critical dimension of more than about 65 nm. The dielectric and metal hard masks are etched wherein the photoresist pattern is removed. The dielectric and metal hard masks are trimmed to reduce their critical dimension to 10-60 nm and to reduce sidewall surface roughness. The dielectric and metal hard masks and the MTJ stack are etched wherein the dielectric mask is removed and a MTJ device is formed having a small critical dimension of 10-60 nm, and having further reduced sidewall surface roughness. | 2021-11-18 |
20210359203 | RESISTIVE RANDOM ACCESS MEMORY DEVICES - The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening having a sidewall, a first electrode on the sidewall of the opening, a spacer layer on the first electrode, a resistive layer on the first electrode and upon an upper surface of the spacer layer, and a second electrode on the resistive layer. | 2021-11-18 |
20210359204 | RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction. | 2021-11-18 |
20210359205 | METHOD OF FORMING CHALCOGENIDE-BASED THIN FILM USING ATOMIC LAYER DEPOSITION PROCESS, METHOD OF FORMING PHASE CHANGE MATERIAL LAYER AND SWITCHING DEVICE, AND METHOD OF FABRICATING MEMORY DEVICE USING THE SAME - Disclosed is a method of forming a chalcogenide-based thin film using an atomic layer deposition (ALD) process including forming a Ge—Te-based material, the forming of the Ge—Te-based material may include a first operation of supplying, into a reaction chamber provided with a substrate, a first source gas including a Ge precursor with Ge having an oxidation state of +2, a second operation of supplying a first purge gas into the reaction chamber, a third operation of supplying, into the reaction chamber, a second source gas including a Te precursor and a first co-reactant gas for promoting a reaction between the Ge precursor and the Te precursor, and a fourth operation of supplying a second purge gas into the reaction chamber. | 2021-11-18 |
20210359206 | PATTERNED PEROVSKITE FILM, PREPARATION METHOD THEREOF, AND DISPLAY DEVICE - The present invention discloses a patterned perovskite film, a preparation method thereof, and a display device. The method includes mixing a perovskite precursor and a photo-initiated polymer monomer, and realizing polymerization of a part of a predetermined area under shielding of a photomask, that is, the formed perovskite crystals are encapsulated by the formed polymer with formation of the patterned perovskite film. | 2021-11-18 |
20210359207 | PROCESS FOR PRODUCING A LAYER WITH MIXED SOLVENT SYSTEM - The present invention relates to a process for producing a layer of a crystalline A/M/X material, which crystalline A/M/X material comprises a compound of formula [A]a[M]b[X]c, wherein: [M] comprises one or more first cations, which one or more first cations are metal or metalloid cations; [A] comprises one or more second cations; [X] comprises one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, and wherein the solvent comprises: (i) a non-polar organic solvent which is a hydrocarbon solvent, a chlorohydrocarbon solvent or an ether solvent; and (ii) a first organic amine comprising at least three carbon atoms. Also described are compositions useful in the process of the invention. | 2021-11-18 |
20210359208 | THERMALLY ACTIVATED DELAYED FLUORESCENT MATERIAL, METHOD OF FABRICATING SAME, AND ELECTROLUMINESCENT DEVICE - A thermally activated delayed fluorescent material, a method of fabricating the same, and an electroluminescent device are provided. An electron donor and an electron acceptor of the thermally activated delayed fluorescent material are connected with each other by a hexatomic ring. Thus, luminous efficiency of the thermally activated delayed fluorescent material can be improved. | 2021-11-18 |
20210359209 | MASK ASSEMBLY, MAIN MASK, AND MATING MASK - Embodiments of the present disclosure provide a main mask, a mating mask, and a mask assembly. The mask assembly includes a main mask having an evaporation area and a mating mask having a mating area. An effective evaporation area of the main mask corresponds to a display area of a display panel. A first mating area of the mating mask is provided with a first mating opening, and an orthographic projection of the first mating opening on the mating mask completely covers an orthographic projection of the effective evaporation opening on the mating mask. A second mating area of the mating mask shields an ineffective evaporation opening in an ineffective evaporation area of the main mask. | 2021-11-18 |
20210359210 | HIGH-RESOLUTION SHADOW MASKS - A shadow mask for patterned vapor deposition of an organic light-emitting diode (OLED) material includes a ceramic membrane under tensile stress with a plurality of through-apertures forming an aperture array through which a vaporized deposition material can pass. A multilayer peripheral support is attached to a rear surface with a hollow portion beneath the aperture array. A compressively-stressed interlayer balances the tensile stress of the ceramic membrane. A shadow mask module with multiple shadow masks is also provided and includes a rigid carrier having plural windows with a shadow mask positioned in each window. To make the module, shadow mask blanks are affixed to each carrier window followed by etching of apertures and support layers. In this way extremely flat masks with precise aperture patterns are formed. | 2021-11-18 |
20210359211 | METHOD FOR MANUFACTURING DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING MASK PLATE AND DISPLAY DEVICE - The present disclosure relates to the field of manufacturing displays, and provides a method for manufacturing a display substrate, a method for manufacturing a mask plate, and a display device. The method for manufacturing a display substrate comprises: providing a first substrate; providing a mask plate opposite to the first substrate, the mask plate comprising one or more light-transmissive regions, and an electrically conductive material is provided on a surface of the mask plate facing the first substrate; and irradiating a surface of the mask plate facing away from the first substrate with light rays, such that the electrically conductive material is transferred to a surface of the first substrate facing the mask plate, thereby forming an electrically conductive layer having one or more electrically conductive portions, wherein a projection of each of the one or more electrically conductive portions on the mask plate coincides with a respective light-transmissive region. | 2021-11-18 |
20210359212 | FILM FORMING METHOD FOR ORGANIC SEMICONDUCTOR FILM - An object of the present invention is to provide a film forming method for an organic semiconductor film, with which an organic semiconductor film having good uniformity and high mobility can be manufactured with good productivity. A coating liquid is prepared by dissolving an organic semiconductor material in a solvent, the coating liquid is sprayed by a spray unit, and the coating liquid is applied onto a temperature-controlled substrate while the coating liquid during the flight which has been sprayed by the spray unit is being heated, whereby problems are solved. | 2021-11-18 |
20210359213 | LIGHT-EMITTING DEVICE - A light emitting device with excellent light emission efficiency is provided. The light emitting device has an anode, a cathode, a first layer disposed between the anode and the cathode, and a second layer disposed between the anode and the first layer. The second layer is a layer containing a crosslinked product of a compound having a crosslinkable group selected from Group A, and at least one of the first layer and the second layers contains a compound represented by the formula (T-1). The compound having a crosslinkable group is a polymer compound having a crosslinkable group selected from Group A: | 2021-11-18 |
20210359214 | ORGANIC LIGHT-EMITTING DEVICE AND APPARATUS INCLUDING THE SAME - An organic light-emitting device includes: a first electrode; a second electrode; m emission units; and m−1 charge generation layer(s), each including an n-type charge generation layer and a p-type charge generation layer and being located between two emission units. The m emission units each include a hole transport region, an electron transport region, and an emission layer between the hole transport region and the electron transport region. An m | 2021-11-18 |
20210359215 | COMPOUND AND LIGHT-EMITTING DEVICE INCLUDING THE SAME - A compound represented by Formula 1, when used in a light-emitting device according to an embodiment of the disclosure, may have higher efficiency characteristics than compounds in the related art, and in particular, may have excellent effects in terms of lifespan improvement, resulting in a significant improvement in the lifespan of the light-emitting device: | 2021-11-18 |
20210359216 | A PLURALITY OF HOST MATERIALS AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present disclosure relates to a plurality of host materials comprising a first host material comprising a compound represented by formula 1, and a second host material comprising a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds as a host material, it is possible to provide an organic electroluminescent device having higher luminous efficiency and/or improved lifespan characteristics compared to conventional organic electroluminescent devices. | 2021-11-18 |
20210359217 | COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, AND ELECTRONIC DEVICE - A compound of the following formula (1) and others. R | 2021-11-18 |
20210359218 | ORGANIC LIGHT EMITTING MATERIAL, PREPARATION METHOD THEREOF, AND ORGANIC LIGHT EMITTING DEVICE - An organic light emitting material, a preparation method thereof, and an organic light emitting device are provided. The organic light emitting material includes oxadiazole-p-benzodioxazoles. The oxadiazole-p-benzodioxazoles has a large π-conjugated system, that is, it has good planarity and strong visible π-π* absorption. Also, it has high fluorescence quantum yield. Therefore, the oxadiazole-p-benzodioxazoles with a large π-conjugated system has a high-efficiency electron transport property, and it has a high-efficiency electron-withdrawing group to increase electron transport efficiency and improves its luminous efficiency. | 2021-11-18 |
20210359219 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Provided are a heterocyclic compound represented by Formula 1 and an organic light-emitting device including the same. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic light-emitting device includes at least one heterocyclic compound represented by Formula 1. | 2021-11-18 |
20210359220 | ORGANIC ELECTROLUMINESCENCE DEVICE AND COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a first electrode, a second electrode disposed on the first electrode, and functional layers disposed between the first electrode and the second electrode. At least one functional layer of the functional layers includes a compound represented by Formula 1, thereby having low driving voltage, high light emission efficiency, and long life characteristics. | 2021-11-18 |
20210359221 | COMPOUND, AND ORGANIC ELECTROLUMINESCENCE DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A compound represented by the following formula (1): | 2021-11-18 |
20210359222 | COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT AND ELECTRONIC DEVICE - A compound is represented by a formula (1). In the formula (1), at least one combination of adjacent two or more of R | 2021-11-18 |
20210359223 | ORGANIC LIGHT-EMITTING ELEMENT - Provided is an organic light-emitting element comprising: a first electrode; a second electrode provided to face the first electrode; and an organic material layer provided between the first electrode and the second electrode, in which the organic material layer comprises a layer comprising a compound of Formula 1: | 2021-11-18 |
20210359224 | TETRADENTATE PLATINUM AND PALLADIUM COMPLEXES BASED ON BISCARBAZOLE AND ANALOGUES - Tetradentate platinum and palladium complexes based on biscarbazole and analogues for full color displays and lighting applications. | 2021-11-18 |
20210359225 | IRIDIUM COMPLEX-CONTAINING COMPOSITION, ORGANIC LIGHT EMITTING DEVICE HAVING THE SAME, DISPLAY APPARATUS, IMAGING APPARATUS, ELECTRONIC EQUIPMENT, LIGHTING APPARATUS, AND MOVING BODY - A composition that includes: a homo-N-trans (HNT) iridium complex having an iridium atom, and a first ligand, a second ligand, and a third ligand that are bonded to the iridium atom, the second ligand having the same structure as the first ligand, the third ligand having a different structure from the first and second ligands; and an isomer of the iridium complex, the isomer having an iridium atom, a fourth ligand, a fifth ligand, and the third ligand, the fourth ligand being a ligand represented by the same rational formula as that of the first ligand, and the fifth ligand being a ligand represented by the same rational formula as that of the second ligand. The composition ratio of the isomer relative to a total of the iridium complex and the isomer is 1.5% or more. | 2021-11-18 |
20210359226 | ORGANIC LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING SAME - Provided is an organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the emission layer may include a host and a dopant, the host may include a first compound and a second compound different from the first compound, the dopant may include a third compound and a fourth compound different from the third compound, and the third compound may be a platinum-containing organometallic compound. | 2021-11-18 |
20210359227 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANOMETALLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes: a first electrode; a second electrode facing the first electrode; and a plurality of organic layers disposed between the first electrode and the second electrode, wherein at least one organic layer of the plurality of organic layers includes a first compound represented by Formula 1, a second compound represented by Formula 2, and a third compound represented by Formula 3, wherein Formulae 1-3 are defined herein. | 2021-11-18 |
20210359228 | ACTIVE LAYER COMPOSITION FOR SOLAR CELL, PREPARATION METHOD THEREOF AND ORGANIC SOLAR CELL COMPRISING THE SAME - Disclosed are an active layer composition for a solar cell containing a two-dimensional conjugated polymer that has excellent thermal/chemical stability and may improve power conversion efficiency of an organic solar cell via realization of high open-circuit voltage and short-circuit current, a preparation method of the composition, and an organic solar cell containing the composition. The composition contains a two-dimensional conjugated polymer having a repeating unit represented by a following Chemical Formula 4-2 as an electron donor material: | 2021-11-18 |
20210359229 | LIGAND FOR SURFACE MODIFICATION, LIGHT EMITTING ELEMENT INCLUDING THE SAME, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A light emitting element includes: a member including a semiconductor layer and an active layer; and at least one ligand bonded to a surface of the member; wherein the at least one ligand includes: a first ligand including two or more functional group chains; and a second ligand having a shorter carbon length than the first ligand. | 2021-11-18 |
20210359230 | AMINE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE INCLUDING THE SAME - An amine compound which improves emission efficiency and an organic electroluminescence device including the same are provided. The amine compound is represented by the structure below, wherein X is O or S, Y is C or Si, each of Ar | 2021-11-18 |
20210359231 | FLEXIBLE DISPLAY DEVICE - A flexible display device comprising a flexible substrate, a buffer layer, an active layer, a gate insulating layer, a gate metal layer, an interlayer insulating layer, a source/drain metal layer, a passivation layer, an anode metal layer, a pixel defining layer, an OLED light emitting layer, and an encapsulation layer; wherein the interlayer insulating layer is formed with a via hole, the source/drain metal layer is connected to the active layer through the via hole; a material of the pixel defining layer is a polymer organic polymer with a high Young's modulus. | 2021-11-18 |
20210359232 | FLEXIBLE SUBSTRATE, FLEXIBLE DISPLAY PANEL, AND MANUFACTURING METHOD THEREOF - A flexible substrate, a flexible display panel, and a manufacturing method are provided. The method of manufacturing the flexible display panel includes forming a first organic layer on a substrate; determining a bending area on the first organic layer and forming an adhesion layer on a part of the first organic layer, located in the bending area; forming an inorganic layer on the adhesion layer and on the first organic layer; forming a second organic layer on the inorganic layer; forming a thin-film transistor layer, an organic light-emitting diode layer, and an encapsulation layer on the second organic layer in sequence; removing the substrate; and removing the part of the first organic layer, located in the bending area, and the adhesion layer so that the flexible display panel is formed. | 2021-11-18 |
20210359233 | MANUFACTURING METHOD OF FLEXIBLE DISPLAY PANEL AND BASE SUBSTRATE FOR MANUFACTURING FLEXIBLE DISPLAY PANEL - The present invention provides a manufacturing method of a flexible display panel and a base substrate for manufacturing a flexible display panel. In the manufacturing method, a flexible substrate is first coated on a base substrate having base protrusions. Then, flexible protrusions arranged on the flexible substrate and corresponding to the base protrusions are laser cut to form first openings in the flexible substrate. Next, a display function layer is formed on the flexible substrate and the base protrusions. After that, the flexible substrate is removed from the base substrate, and the display function layer is laser cut to form second openings arranged corresponding to the first openings. | 2021-11-18 |
20210359234 | ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND METHOD OF FABRICATING SAME - An organic light emitting diode (OLED) display panel and a method of fabricating the same are provided. The OLED display panel includes a double-layer polyimide flexible layer, a thin film transistor driving layer, an OLED light emitting layer, and a thin film encapsulation layer. The double-layer polyimide flexible layer includes a glass substrate, a wetting layer, a polyimide flexible layer, and an inorganic silicon nitride layer. The wetting layer converts the glass substrate or the inorganic silicon nitride layer from hydrophilic to hydrophobic. | 2021-11-18 |
20210359235 | DISPLAY PANEL AND METHOD OF MANUFACTURING SAME - The disclosure provides a display panel and a method of manufacturing same. In the display panel, an organic light-emitting structural layer and an encapsulating structural layer are formed on a pixel defining layer and covers an entire surface of a through hole. The through hole is defined before the organic light-emitting structural layer and the encapsulating structural layer covers the surface of the through hole. Therefore, the encapsulating structural layer covers an interior lateral wall of the through hole, which prevents atmospheric moisture from invading into gaps between layers of an OLED device from the through hole and eroding a metal layer and an organic light-emitting layer in a display region. | 2021-11-18 |
20210359236 | FLEXIBLE SUBSTRATE AND MANUFACTURING METHOD THEREOF - A flexible substrate and a manufacturing method thereof are provided. The flexible substrate includes a substrate and an alignment layer. The alignment layer is disposed on the substrate and is in direct contact with the substrate. The alignment layer includes an alignment material and a plurality of core-shell particles. The core-shell particles are suspended in a surface layer of the alignment layer. The core-shell particles are decomposed when the alignment material is cured by heat to simultaneously generate a plurality of hollow structures that are approximately same size as the core-shell particles in the alignment layer, thereby forming an anti-reflection layer. The anti-reflection layer is configured to refract and block light from entering the substrate. | 2021-11-18 |
20210359237 | SOLAR HEAT GAIN COEFFICIENT IMPROVEMENT BY INCORPORATING NIR ABSORBERS - A visibly transparent photovoltaic device includes a visibly transparent substrate, a first visibly transparent electrode on the visibly transparent substrate, a second electrode, a visibly transparent photoactive layer between the first visibly transparent electrode and the second electrode and configured to convert at least one of near-infrared light or ultraviolet light into photocurrent, and a near-infrared absorbing material layer configured to absorb the near-infrared light and transmit visible light. | 2021-11-18 |
20210359238 | QUANTUM DOT DEVICE AND DISPLAY DEVICE - A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts. | 2021-11-18 |
20210359239 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND LIGHTING APPARATUS FOR VEHICLES USING THE SAME - Disclosed are an organic light emitting display device and lighting apparatus for vehicles using the same. The organic light emitting display device includes a first layer including a first organic layer and a first emission layer on a first electrode, a second layer including a second emission layer and a second organic layer on the first layer, a second electrode on the second layer, and a third organic layer between the first layer and the second layer. A thickness of the first emission layer is equal to or greater than a thickness of each of the first organic layer and the second organic layer. | 2021-11-18 |
20210359240 | QUANTUM DOT LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a quantum dot light-emitting diode device, which includes a substrate, a first electrode disposed on the substrate, a hole layer vertically disposed on an anode, wherein the hole layer includes a sidewall, an electron transport layer disposed on the sidewall, a quantum dot layer disposed on the electron transport layer, and a second electrode disposed on the electron transport layer. A density of the zinc oxide nanowire is high in the present disclosure, causing high light current density, which greatly improves a brightness of light to achieve a purpose of increasing a light-emitting performance of the light-emitting diode device. | 2021-11-18 |
20210359241 | Quantum Dot Light Emitting Diode and Method for Manufacturing the Same, and Display Panel - Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method. for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines. | 2021-11-18 |
20210359242 | FLEXIBLE DISPLAY DEVICE - A flexible display device includes a flexible display panel and a chip on film (COF) bonded to the flexible display panel; wherein the flexible display panel is divided into a display region, a bonding region on a side of the display region, and a bending region between the display region and the bonding region; wherein the COF comprises a main body portion and two expansion bonding portions respectively disposed at two ends of one side of the main body portion; wherein an edge of the main body portion adjacent to the two expansion bonding portions are disposed with a plurality of connection pins; wherein the COF is bonded to the bonding region of the flexible display panel through the plurality of connection pins. | 2021-11-18 |
20210359243 | OLED PANEL AND MANUFACTURING METHOD THEREOF - An OLED panel and a manufacturing method thereof are provided, the OLED panel includes a light emitting substrate, and at least one set of encapsulating film disposed on the light emitting substrate. The encapsulating film includes a first inorganic layer disposed on the light emitting substrate; an inorganic dam disposed at an edge region of the first inorganic layer; an organic layer disposed on the first inorganic layer and surrounded by the inorganic dam; and a second inorganic layer disposed on the organic layer and covering the first inorganic layer, the organic layer and the inorganic dam. | 2021-11-18 |
20210359244 | FLEXIBLE DEVICE - A display device includes a flexible substrate including a first surface and a second surface facing the first surface; a TFT array layer provided on the first surface; a display element layer provided on the TFT array layer; a first heat releasing layer provided on the second surface; a first protective layer provided on the same side as the second surface; a second heat releasing layer provided on the display element layer; and a second protective layer provided on the display element layer. The second heat releasing layer has a light transmittance of 90% or higher. | 2021-11-18 |