47th week of 2009 patent applcation highlights part 12 |
Patent application number | Title | Published |
20090283697 | SYSTEM AND METHOD FOR MONITORING BLUE-GREEN ALGAE IN A FLUID - A particle detection system with a detection mechanism that includes detectors positioned to detect two different ranges of fluorescence produced by particles in the fluid in a flow chamber. Each of the detectors is arranged to generating a trigger signal whenever fluorescence is detected. The system and related method enhance the accuracy and sensitivity of blue-green algae monitoring by utilizing imaging flow cytometry combined with particle analysis and the measurement of the ratio of each particle's phycocyanin to chlorophyll b detected by using the two detectors configured for detection of two different fluorescence ranges, one associated with the phycocyanin and the other associated with the chlorophyll b. Optionally, captured images may be used in comparison to known images of a library of images. | 2009-11-19 |
20090283698 | Hand-Held Probe for Intra-Operative Detection of Fluorescence Labeled Compounds and Antibodies - A hand-held probe for intra-operative detection of fluorescence labeled compounds includes a housing comprising a handle and a columnar portion, and a power source within the housing. A light emission source proximate the columnar portion of the housing is configured to fluoresce at least one of predetermined compounds and predetermined antibodies. An excitation switch proximate the handle selectably activates the light emission source. A detector receives fluorescent light emissions directed toward the columnar portion from at least one of the compounds and antibodies and convert the fluorescent light emissions to a corresponding emission electrical signal. A controller within the housing receives the emission electrical signal from the detector and converts the emission electrical signal to a corresponding data signal. Finally, a data port within the housing receives the data signal from the controller, converts the data signal to a corresponding output signal, and transmits the output signal. | 2009-11-19 |
20090283699 | FREQUENCY DOMAIN LUMINESCENCE INSTRUMENTATION - Instrumentation for measuring luminescence phase lag to quantitate an analyte concentration is corrected to eliminate or reduce extraneous phase lag noise. A calibration factor is determined in steps that are interspersed between quantitative measurements. An optical pathway is provided to accomplish the calibration by the provision of a second optical source that emits in the luminescence emission band of a luminescent material. The calibration factor may be subtracted from measurement of the quantification phase lag to correct for extraneous phase lag. | 2009-11-19 |
20090283700 | FLUORESCENCE DETECTING METHOD - A fluorescence detecting method utilizes surface plasmon enhancement. An electric field enhancing field is caused to be generated at a detecting portion that includes a metal film provided on a surface of a dielectric prism. Fluorescence emitted by fluorescent labels, which are attached to a detection target substance, due to the excitation effect of the electric field enhancing field is detected by a photodetector. During the detection, a plurality of fine metal particles are dispersed on the detecting portion. | 2009-11-19 |
20090283701 | Medical Implants - Provided herein is methods of treating a medical implant and methods of using the same. | 2009-11-19 |
20090283702 | CHARGED PARTICLE BEAM EXTRACTION SYSTEM AND METHOD - A charged particle beam extraction system and method capable of shortening the irradiation time and increasing the number of patients treatable per unit time. The charged particle beam extraction system comprises a synchrotron for cyclically performing patterned operation including four steps of introducing, accelerating, extracting and decelerating an ion beam, an on/off switch for opening or closing connection between an RF knockout electrode and an RF power supply for applying RF power to the RF knockout electrode, and a timing controller for controlling on/off-timing of the on/off switch such that when extraction of the ion beam is stopped at least once during the extraction step of the synchrotron, an amount of the ion beam extracted from the synchrotron in one cycle is held substantially at a setting value. | 2009-11-19 |
20090283703 | ION BEAM IRRADIATION APPARATUS AND ION BEAM MEASURING METHOD - A beam profile monitor is disposed on an orbit of an ion beam, and measures a beam intensity distribution of the ion beam. A pair of beam blocking members are opposed to each other across the ion beam in the x direction, and forms an opening through which the ion beam passes: At least one of the beam blocking members includes a plurality of movable blocking plates disposed without forming a gap in the y direction, and in an independently reciprocable manner in the x direction. A minute opening is formed between the beam blocking members opposed to each other by adjusting the positions of the beam blocking members. From a result of the intensity distribution measurement which is performed by said beam profile monitor on the ion beam passed through the minute opening, the emittance of the ion beam is calculated. | 2009-11-19 |
20090283704 | PARTICLE BEAM IRRADIATION SYSTEM - It is an object of the present invention to provide a charged particle beam extraction method and particle beam irradiation system that make it possible to exercise intensity control over an extracted ion beam while a simple device configuration is employed. To accomplish the above object, there is provided a particle beam irradiation system comprising: a synchrotron for accelerating and extracting an charged particle beam; an irradiation apparatus for extracting the charged particle beam that is extracted from the synchrotron; first beam intensity modulation means for controlling the beam intensity of the charged particle beam extracted from the synchrotron during an extraction control period of an operation cycle of the synchrotron; and second beam intensity modulation means for controlling the beam intensity during each of a plurality of irradiation periods contained in the extraction control period of the operation cycle. | 2009-11-19 |
20090283705 | ION IMPLANTER FOR PHOTOVOLTAIC CELL FABRICATION - Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving. | 2009-11-19 |
20090283706 | DAMPING VALVE FOR A HYDRAULIC SHOCK ABSORBER - A flow-control valve has a housing, a guide fixed in the housing and having a tubular end and formed with a radially throughgoing heart-shaped valve opening, and a slide axially shiftable in the housing and having a shaft and a sleeve extending axially from the shaft and snugly surrounding and slidable on the guide-body end. The slide is axially shiftable between positions with the sleeve completely blocking, partially blocking, and completely unblocking the valve opening. An electromagnetic linear actuator in the housing can axially shift the slide. A support ring fixed to the actuator and to the guide forms with the guide-body end an annular chamber into which the valve opening opens and is formed with a radially throughgoing port opening into the chamber and radially aligned with the valve opening. | 2009-11-19 |
20090283707 | SOLENOID VALVE HAVING A SHORT AXIS - According to a solenoid valve of the invention, which is fitted in a pump housing, when ABS/TCS/ESP operate, a valve body with a plunger that forms the internal channel with a plunger seat is formed in a simple cylindrical shape to reduce a cycle time and manufacturing cost while a seat housing that is manufactured by pressing, in which a filter and plunger seat forming an internal channel are assembled is fitted in a vale body by staking. Accordingly, a laser welding is not needed and the length of the end portion of valve body is reduced, such that the entire length is reduced and the weigh is reduced as well. | 2009-11-19 |
20090283708 | VALVE TRIM ADJUSTOR FOR A POPPET CONTROL VALVE - A control valve having an external valve trim adjustor is provided. The control valve comprises a valve shaft comprising a contact member extending in a direction transverse to the valve shaft, a stationary valve cap adapted to receive the valve shaft, an adjustment member coupled to the valve cap, and a stop plate coupled to the contact member and threadedly coupled to the adjustment member, the stop plate positioned at least partially between the adjustment member and the contact member and adapted to position the contact member away from the valve cap in response to manipulation of the adjustment member. | 2009-11-19 |
20090283709 | AXIAL DRAG VALVE WITH INTERNAL SLEEVE ACTUATOR - In accordance with the present invention, there is provided an axial drag control valve which includes an internal disk stack trim and an internal actuator. The fluid inlet and outlet of the valve are disclosed along a common axis, which is further shared with the actuator of the valve. The actuator moves along this particular axis to control the fluid flow rate, pressure, or temperature of the system. The valve actuator may be powered by air from an external source. | 2009-11-19 |
20090283710 | Interference fit assembly, a thermal compensation arrangement of an injection valve and method for producing an interference fit assembly - Interference fit assembly ( | 2009-11-19 |
20090283711 | HYBRID NANOSCALE PARTICLES - An adsorption method includes the step of adsorbing hybrid particles from a colloidal dispersion of such particles at an interface between the dispersion and a second phase, said hybrid particles comprising:
| 2009-11-19 |
20090283712 | SESQUITERPENE STABILIZED COMPOSITIONS - Provided is a composition comprising (a) at least one halogenated compound selected from the group consisting of C | 2009-11-19 |
20090283713 | ENVIRONMENTALLY BENIGN ANTI-ICING OR DEICING FLUIDS EMPLOYING INDUSTRIAL STREAMS COMPRISING HYDROXYCARBOXYLIC ACID SALTS AND/OR OTHER EFFECTIVE DEICING/ANTI-ICING AGENTS - The present invention provides methods for use of novel deicing and anti-icing compositions based on by-produce of off-specification materials from biodegradable and renewable sources and which also can be used in a variety of other services. | 2009-11-19 |
20090283714 | ETCHING GAS FOR REMOVING ORGANIC LAYERS - An etching gas for removing organic layer is disclosed. The etching gas of the present invention preferably includes two compositions. The first composition of the etching gas includes hydrocarbon, halogen or halogen compound, oxygen gas, hydrogen gas, nitrogen has, and inert gas, in which the hydrocarbon comprises an alkene. The second composition of the etching gas includes hydrocarbon, halogen or halogen compound, oxygen gas, hydrogen gas, nitrogen gas, and inert gas, in which the hydrocarbon comprises an alkyne. The etching gas of the present invention may also include hydrofluorocarbon compounds, hydrogen chloride, and hydrogen bromide to improve the performance of the etching process. | 2009-11-19 |
20090283715 | POLISHING SLURRY FOR CMP - The invention relates to a polishing slurry for CMP containing abrasive and a fang and seam restrainer, wherein the fang and seam restrainer is at least one selected from polycarboxylic acids, polycarboxylic acid derivatives, or carboxylic-acid-containing copolymers. According to this, provided is a polishing slurry for CMP which restrains a fang phenomenon or a seam phenomenon that an insulated film near wiring regions is excessively polished, thereby giving a high flatness to a polished face. | 2009-11-19 |
20090283716 | Method for Producing a Fuel Cell Electrode, Involving Deposition on a Support - The invention relates to a method for producing carbon electrodes by deposition on a substrate, to produce a fuel cell. The method comprises the steps of alternately and/or simultaneously depositing porous carbon and a catalyst onto the substrate by plasma spaying in a vacuum chamber. The catalyst is used to accelerate at least one of the chemical reactions that takes place in the fuel cell. The thickness of each layer of porous carbon is chosen so that the catalyst deposited on this carbon layer is distributed essentially throughout this layer, thereby by providing a layer of catalyzed carbon. The total thickness of catalyzed carbon in the electrode is less than 2 micrometers, and preferably equal to no more than 1 micrometer. | 2009-11-19 |
20090283717 | Method for Preparing a Cellulose Carbamate Solution - A method for preparing a cellulose carbamate solution. Dissolving is performed in two steps, first by moistening cellulose carbamate pulp with a dilute alkaline solution and second by admixing a concentrated alkaline solution, as cold as possible, to the pulp under intensive stirring. The technique utilizes the low freezing point of the aqueous NaOH solution at the concentration of 18%, wherein the freezing point is below −20° C., and the intensive stirring function of the dissolve mixer device during the dosage. t is possible to prepare solutions of high quality and having high dry matter content in a mixing time of a few minutes only. | 2009-11-19 |
20090283718 | Method for preparing fluorinated nanodiamond liquid dispersion - The present invention herein provides a method for preparing a dispersion of fluorinated nanodiamond particles, which can be used in, for instance, an abrasive, a lubricant, and a heat-exchanging fluid medium, which is stable over a long period of time on the order of not less than 120 hours and which has a viscosity, as determined at 20° C., of not less than 3 cP. This dispersion can be prepared by blending fluorinated nanodiamond particles with a first liquid having a viscosity, as determined at 20° C., of not higher than 2.5 cP to thus form a suspension, classifying the suspension to give a classified suspension, and then blending the classified suspension with a second liquid having a viscosity value, as determined at 20° C., of not less than 4 cP. | 2009-11-19 |
20090283719 | THERMOSETTING COMPOSITION - A thermosetting composition containing an aluminosiloxane and an epoxy silicone. The thermosetting composition of the present invention is suitably used for, for example, photosemiconductor devices mounted with blue or white LED elements (backlights for liquid crystal displays, traffic lights, outdoor big displays, advertisement sign boards, and the like). | 2009-11-19 |
20090283720 | Nano-composite IR window and method for making same - A transparent, nano-composite material and methods for making structures from this material are provided. In one embodiment, the material is made from a polycrystalline matrix containing dispersed particles of a harder material. The particles are less then about 100 nm. In other embodiments, methods for making structures from the material are provided. In one aspect, the methods include blending precursor powders for the matrix and reinforcing phases prior to forming and sintering to make a final structure. In other aspects, a precursor powder for the matrix is pressed into a green shape, which is partially sintered and exposed to a solution containing a precursor for the reinforcing phase, prior to be sintered into the final material. In another aspect, the precursor powder for the matrix is coated with a sol-gel precursor for the reinforcing material, then pressed into a green shape and sintered to form the final structure. | 2009-11-19 |
20090283721 | NITRIDE-BASED RED PHOSPHORS - Embodiments of the present invention are directed to the fluorescence of a nitride-based deep red phosphor having at least one of the following novel features: 1) an oxygen content less than about 2 percent by weight, and 2) a halogen content. Such phosphors are particularly useful in the white light illumination industry, which utilizes the so-called “white LED.” The selection and use of a rare earth halide as a raw material source of not only the activator for the phosphor, but also the halogen, is a key feature of the present embodiments. The present phosphors have the general formula M | 2009-11-19 |
20090283722 | Odorant for hydrogen based on acrylate and indene - The present invention concerns a nitrogen-free and sulfur-free odorant for hydrogen gas containing at least one acrylic acid C<SUB>1</SUB>-C<SUB>6</SUB>-alkyl ester and indene, its use for the odorisation of hydrogen gas, a process for the odorisation of hydrogen gas and hydrogen gas containing an odorant according to the invention. Data supplied from the esp@cenet database—Worldwide | 2009-11-19 |
20090283723 | OLIGOMERIC COMPOUNDS WHICH FORM A SEMICONDUCTOR LAYER - Oligomeric compounds of the general formula (M), mixtures thereof and electronic components containing the same: | 2009-11-19 |
20090283724 | CONDUCTIVE MASTER BATCH - A method for producing a conductive polyamide-polyphenylene ether resin composition comprising (A) 10 to 90 parts by mass of a polyphenylene ether resin, (B) 5 to 85 parts by mass of a polyamide having a (terminal amino group)/(terminal carboxyl group) ratio falling within the range from 0.20 to 4.0, (C) 5 to 85 parts by mass of a polyamide having a (terminal amino group)/(terminal carboxyl group) ratio falling within the range from 0.05 to 0.19 and (D) 0.1 to 10 parts by mass of a conductive filler, the method comprising the step of melt-kneading of the component (A), the component (B), a compatibilizer (F) and a master batch (E) obtained by melt-kneading of the component (D) and the component (C) in advance. | 2009-11-19 |
20090283725 | PHOTOSENSITIVE PASTE COMPOSITION, PDP ELECTRODE MANUFACTURED USING THE COMPOSITION, AND PDP COMPRISING THE PDP ELECTRODE - A photosensitive paste composition is provided. The photosensitive paste composition contains conductive powder, an inorganic binder, and an organic vehicle, wherein, assuming that 10% by weight of the particles consisting the conductive powder have a diameter less than D | 2009-11-19 |
20090283726 | METALLIC FINE PARTICLES, PROCESS FOR PRODUCING THE SAME, COMPOSITION CONTAINING THE SAME, AND USE THEREOF - A process for producing metallic fine particles is provided by, the reduction of the metallic ions performed in two steps using two types of reducing agents which significantly differ in reducing ability thereof, in which a reducing agent in which the reduction ability is strong is used in the first reduction step, and a reducing agent in which the reduction ability is weak is used in the second reduction step, and the nano-sized metallic fine particles are produced. An aqueous metallic salt solution containing a surfactant is used and a two-step reduction is performed in the same vessel, in which as the reducing agent of the first reduction process, at least one selected from the group consisting of boron hydride, dimethylamine borane, hydrazine, and ascorbic acid is used, and as the reducing agent of the second reduction process, specific alkylamine or alkanolamine is used. | 2009-11-19 |
20090283727 | DISKS FOR DATA STORAGE - Cooperativity between groups within a polymeric photochromic medium provides the basis for enhanced writing effect. The cooperatively may be among photochromic groups being present in a high concentration. | 2009-11-19 |
20090283728 | LIGAND EXCHANGE THERMOCHROMIC, (LETC), SYSTEMS - Ligand exchange of thermochromic, LETC, systems exhibiting a reversible change in absorbance of electromagnetic radiation as the temperature of the system is reversibly changed are described. The described LETC systems include one or more than one transition metal ion, which experiences thermally induced changes in the nature of the complexation or coordination around the transition metal ion(s) and, thereby, the system changes its ability to absorb electromagnetic radiation as the temperature changes. | 2009-11-19 |
20090283729 | Extendable handle leverage ratchet - A ratchet mechanism for securing cargo that may include a body, a ratchet, a lever and an adjustable or extendable handle. The ratchet may include a pair of opposing arms connected to the body and a spool rotatably connected to the arms. The lever may be rotatably attached to the arms and reciprocated between an open position and a closed position, wherein the lever may include at least one pawl to engage the ratchet wheels and rotate the spool when the lever is reciprocated. The handle may be adjustable to increase the mechanical advantage of the lever. The handle may be rotatably connected to the lever to extend the length of the lever. The handle may be slidably connected to the lever, to slide between a compact position where the handle is closer to the spool, and an extended position where the handle extends further away from the spool. | 2009-11-19 |
20090283730 | GIRTH STRAP TIGHTENER FOR A SADDLE - A hand-held lightweight tightener for tightening the girth strap of a saddle has a handle for leverage, a broad curved cam surface to act as a fulcrum, and a prong to fit in a belt hole on the girth strap. This tightening device can be used to engage and pull at an easily accessible belt hole so that more of the billet strap can be brought through the buckle on the girth strap. Once more billet strap is brought through the buckle, the strap can be buckled through one of the holes of the billet strap, and the tightener removed. The tightener is suitable for hanging on a saddle while riding. The tightener may be used for belt systems other than on a saddle. Optionally, the device has a hoof pick and a compass. | 2009-11-19 |
20090283731 | ROPE TENSIONER FOR WINCH - An apparatus is disclosed for tensioning lines of a winch having a reel and three lines wound about the reel. The apparatus is used to position an object on a support. The first and second lines are wound about the reel in a first direction and the third line is wound about the reel in a second direction opposite the first direction. The first line extends around the first guide, the second line extends around the second guide, and the third line extends between the first and second guides. All three lines are connected to each other and to the object at their distal ends. An inner frame and an outer frame each contact the first and second lines. The inner frame and the outer frame are movable with respect to each other to maintain tension in the first and second lines. | 2009-11-19 |
20090283732 | Rope tensioner for winch - An apparatus is disclosed for tensioning lines of a winch having a reel and three lines wound about the reel. The apparatus is used to position an object on a support. The first and second lines are wound about the reel in a first direction and the third line is wound about the reel in a second direction opposite the first direction. The first line extends around the first guide, the second line extends around the second guide, and the third line extends between the first and second guides. All three lines are connected to each other and to the object at their distal ends. An inner frame and an outer frame each contact the first and second lines. At least one of the inner frame and outer frame moves with respect to the other of the inner and outer frame to maintain tension in the first and second lines. | 2009-11-19 |
20090283733 | SAFETY JACK SYSTEM - An improved safety jack system includes a jack, a locking arm base coupled to the jack base having a linear guide pivotably coupled to the jack base, a releasable locking mechanism engagable with a locking arm, a release operator coupled to the releasable locking mechanism, a locking arm with a plurality of engagement points distributed along at least a portion of the locking arm movably connectable to the linear guide and pivotably connectable to the jack head. An improved jack system includes a remote release operator and a locking mechanism biasing element coupled to the releasable locking mechanism. An improved safety jack system includes a removably connected jack base extension. | 2009-11-19 |
20090283734 | MULTI-PURPOSE PORTABLE LAY-DOWN POST AND FENCING SYSTEM - A portable, fold-over post for use in fencing systems on both outdoor and indoor surfaces includes a vertical member; a first spring removably connected to the vertical member, said spring having a mounting spike integrally formed therewith for insertion into a soft, outdoor surface, and said spring allowing the post to fold over upon impact; and a foot assembly interchangeable with said spring and suitable for supporting said post on a hard surface. | 2009-11-19 |
20090283735 | CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME - Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided. | 2009-11-19 |
20090283736 | NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode layer ( | 2009-11-19 |
20090283737 | NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile storage device having a plurality of unit memory layers, and a plurality of layer selection transistors is provided. The plurality of unit memory layers are laminated in a direction perpendicular to a layer surface of the unit memory layers. Each of the unit memory layers includes a plurality of first wirings, a plurality of second wirings provided non-parallel to the plurality of first wirings, and a recording layer provided between the plurality of first wirings and the plurality of second wirings. The plurality of layer selection transistors are connected to at least one of the plurality of first wirings and the plurality of second wirings of each of the unit memory layers, and collectively selects the at least one in the same plane. | 2009-11-19 |
20090283738 | Phase-change memory using single element semimetallic layer - Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material. | 2009-11-19 |
20090283739 | NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME - There is provided a nonvolatile storage device including a plurality of component memory layers. The plurality of component memory layers are stacked In a direction perpendicular to a layer surface. Each of the plurality of component memory layers includes a first wiring, a second wiring provided non-parallel to the first wiring and a stacked structure unit provided between the first wiring and the second wiring and including a recording layer. At least one of the first wiring and the second wiring includes a protruding portion provided on a portion opposed to the recording layer and protruding toward the recording layer side. | 2009-11-19 |
20090283740 | OPTIMIZED SOLID ELECTROLYTE FOR PROGRAMMABLE METALLIZATION CELL DEVICES AND STRUCTURES - A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure. | 2009-11-19 |
20090283741 | METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE - The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern. | 2009-11-19 |
20090283742 | Methods and articles including nanomaterial - A method of depositing a nanomaterial onto a donor surface comprises depositing a composition comprising nanomaterial onto a donor surface from a micro-dispenser. In another aspect of the invention there is provided a method of depositing a nanomaterial onto a substrate. Methods of making a device including nanomaterial are disclosed. An article of manufacture comprising nanomaterial and a material capable of transporting charge disposed on a backing member is disclosed. | 2009-11-19 |
20090283743 | Composite including nanoparticles, methods, and products including a composite - A composite comprising a first layer comprising a first material including nanoparticles dispersed therein, wherein the first material comprises a material capable of transporting charge, a second layer comprising a second material, and a backing element that is removably attached to the uppermost layer of the composite or the lowermost layer of the composite. In certain preferred embodiments, a least a portion of the nanoparticles include a ligand attached to a surface thereof. Methods are also disclosed. Products including a composite is further provided. Composite materials can be particularly well-suited for use, for example, in products useful in various optical, electronic, optoelectronic, magnetic, or catalytic devices. | 2009-11-19 |
20090283744 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The at least one of the source electrode, drain electrode, and the gate electrode includes a metallic carbon nanotube layer. The metallic carbon nanotube layer includes a plurality of metallic carbon nanotubes. | 2009-11-19 |
20090283745 | METHODS OF MAKING CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES - Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles are disclosed. Carbon nanotube growth catalyst is applied on to a surface of a substrate. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes. Portions of the non-woven fabric are selectively removed according to a defined pattern to create the article. A non-woven fabric of carbon nanotubes may be made by applying carbon nanotube growth catalyst on to a surface of a wafer substrate to create a dispersed monolayer of catalyst. The substrate is subjected to a chemical vapor deposition of a carbon-containing gas to grow a non-woven fabric of carbon nanotubes in contact and covering the surface of the wafer and in which the fabric is substantially uniform density. | 2009-11-19 |
20090283746 | LIGHT-EMITTING DEVICES WITH MODULATION DOPED ACTIVE LAYERS - A semiconductor light emitting device has an n-type layer, a p-type layer, and a light-emitting active layer arranged between the p-type layer and the n-type layer, the active layer having alternating regions of doped and undoped materials. A double heterojunction light emitting device has a bulk active layer having doped portions alternating with undoped portions. A method of manufacturing a light emitting device includes forming a first layer arranged on a substrate, growing an active layer, selectively adding impurities at predetermined times during the growing of the active layer, and forming a second layer arranged on the active layer. | 2009-11-19 |
20090283747 | METALLIZED SILICON SUBSTRATE FOR INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODE - A light emitting diode having a metallized silicon substrate including a silicon base, a buffer layer disposed on the silicon base, a metal layer disposed on the buffer layer, and light emitting layers disposed on the metal layer. The buffer layer can be AlN, and the metal layer ZrN. The light emitting layers can include GaN and InGaN. The metallized silicon substrate can also include an oxidation prevention layer disposed on the metal layer. The oxidation prevention layer can be AlN. The light emitting diode can be formed using an organometallic vapor phase epitaxy process. The intermediate ZrN/AlN layers enable epitaxial growth of GaN on silicon substrates using conventional organometallic vapor phase epitaxy. The ZrN layer provides an integral back reflector, ohmic contact to n-GaN. The AlN layer provides a reaction barrier, thermally conductive interface layer, and electrical isolation layer. | 2009-11-19 |
20090283748 | SEMICONDUCTOR FOR USE IN HARSH ENVIRONMENTS - A gallium-nitride semiconductor apparatus may include an active region having one or more nitride-based barrier layers that are modulation-doped using a nitride-based doped layer. An active region may have at least two nitride-based barrier layers, and a nitride-based blocking layer may be disposed between the at least two barrier layers. | 2009-11-19 |
20090283749 | QUANTUM-WELL PHOTOELECTRIC DEVICE ASSEMBLED FROM NANOMEMBRANES - A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack. | 2009-11-19 |
20090283750 | SUBSTRATE-FREE LIGHT EMITTING DIODE - A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED. | 2009-11-19 |
20090283751 | NANOTUBES AND DEVICES FABRICATED THEREFROM - Nanofluidic devices incorporating inorganic nanotubes fluidly coupled to channels or nanopores for supplying a fluid containing chemical or biochemical species are described. In one aspect, two channels are fluidly interconnected with a nanotube. Electrodes on opposing sides of the nanotube establish electrical contact with the fluid therein. A bias current is passed between the electrodes through the fluid, and current changes are detected to ascertain the passage of select molecules, such as DNA, through the nanotube. In another aspect, a gate electrode is located proximal the nanotube between the two electrodes thus forming a nanofluidic transistor. The voltage applied to the gate controls the passage of ionic species through the nanotube selected as either or both ionic polarities. In either of these aspects the nanotube can be modified, or functionalized, to control the selectivity of detection or passage. | 2009-11-19 |
20090283752 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, a channel and a gate electrode. The drain electrode is spaced from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The channel includes a plurality of carbon nanotube wires, one end of each carbon nanotube wire is connected to the source electrode, and opposite end of each the carbon nanotube wire is connected to the drain electrode. | 2009-11-19 |
20090283753 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The semiconductor layer comprises a plurality of carbon nanotubes. A semiconductor layer comprising a plurality of carbon nanotubes electrically connected to the source electrode and the drain electrode, the plurality of carbon nanotubes having almost the same length are substantially parallel to each other and are joined side by side via van der Waals attractive force therebetween. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. | 2009-11-19 |
20090283754 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes at least two stacked carbon nanotube films. Each carbon nanotube film includes an amount of carbon nanotubes. At least a part of the carbon nanotubes of each carbon nanotube film are aligned along a direction from the source electrode to the drain electrode. | 2009-11-19 |
20090283755 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube film, a plurality of carbon nanotubes in the carbon nanotube film oriented along a direction from the source electrode to the drain electrode. | 2009-11-19 |
20090283756 | SCALABLE QUANTUM WELL DEVICE AND METHOD FOR MANUFACTURING THE SAME - A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap. | 2009-11-19 |
20090283757 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - Disclosed is a light-emitting element with a good carrier balance and manufacturing method thereof which does not require the formation of the heterostructure. The light-emitting element includes an organic compound film containing a first organic compound as the main component (base material) between an anode and a cathode, wherein the organic compound film is provided in contact with the anode and with the cathode. The first organic compound further includes a light-emitting region to which a light-emitting substance is added and includes a hole-transport region to which a hole-trapping substance is added and/or an electron-transport region to which an electron-trapping substance is added. The hole-transport region is located between the light-emitting region and the anode, and the electron-transport region is located between the light-emitting region and the cathode. | 2009-11-19 |
20090283758 | ORGANIC SEMICONDUCTOR, PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE DEVICE - An organic semiconductor includes: a compound represented by formula (I): | 2009-11-19 |
20090283759 | MOS LOW POWER SENSOR WITH SACRIFICAL MEMBRANE - A metal oxide semiconductor (MOS) device includes a substrate, a lower sacrificial membrane adjacent to the substrate, an upper thin film structure adjacent to the lower membrane, and a MOS material deposited on the upper thin film structure. | 2009-11-19 |
20090283760 | Semiconductor device having principal surface of polar plane and side surface at specific angle to nonpolar plane and manufacturing method of the same - A semiconductor device includes a substrate which is composed of a zinc oxide semiconductor having a hexagonal crystal structure and includes a first principal surface which is a polar plane; and four side surfaces which are adjacent to the first principal surface, the side surfaces being orthogonal to the principal surface and are at angles of 40 to 50 degrees to a base nonpolar plane orthogonal to the first principal surface; and a semiconductor layer provided on the first principal surface. | 2009-11-19 |
20090283761 | METHOD OF CUTTING SINGLE CRYSTALS - A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane ( | 2009-11-19 |
20090283762 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included. | 2009-11-19 |
20090283763 | Transistors, semiconductor devices and methods of manufacturing the same - A transistor having a self-align top gate structure and methods of manufacturing the same are provided. The transistor includes an oxide semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region. The transistor further includes a gate insulating layer and a gate electrode, which are sequentially stacked on the channel region. Semiconductor devices including at least one transistor and methods of manufacturing the same are also provided. | 2009-11-19 |
20090283764 | TEG PATTERN FOR DETECTING VOID IN DEVICE ISOLATION LAYER AND METHOD OF FORMING THE SAME - Provided is a test element group (TEG) pattern for detecting a void in a device isolation layer. The TEG pattern includes active regions which are parallel to each other and extend in a first direction, a device isolation layer that separates the active regions, a first contact that is formed across the device isolation layer and a first one of the active regions that contacts a surface of the device isolation layer, and a second contact that is formed across the device isolation layer and a second one of the active regions that contacts another surface of the device isolation layer. | 2009-11-19 |
20090283765 | SEMICONDUCTOR UNIT - A semiconductor unit includes a semiconductor chip, a ceramic substrate having a circuit pattern on which the semiconductor chip is mounted, and a temperature sensor for detecting a temperature. The semiconductor unit further includes a pressing member for retaining the temperature sensor by pressing against the ceramic substrate. | 2009-11-19 |
20090283766 | Methods for increasing film thickness during the deposition of silicon films using liquid silane materials - Embodiments in accordance with the present invention relate to the fabrication of thin (>1 μm) polycrystalline, nanocrystalline, or amorphous silicon films on a substrate. Particular embodiments utilize liquid sources of silane, including but not limited to cyclohexasilane (CHS), cyclopentasilane (CPS) or related derivatives of these compounds. In one embodiment, the silane is applied in liquid form contained by the use of a series of raised walls. Subsequent polymerization results in the material being a solid form. In other embodiments, the silane is applied as a liquid which is then frozen, with subsequent localized melting allowing polymerization to convert the material into a stable solid form. Embodiments of the present invention are particularly suited for forming thick (>10 μm) silicon films needed to achieve light absorption efficiencies deemed acceptable for thin film photovoltaic devices. | 2009-11-19 |
20090283767 | SUBSTRATE FOR A DISPLAY PANEL, A DISPLAY PANEL HAVING THE SUBSTRATE, A METHOD OF PRODUCING THE SUBSTRATE, AND A METHOD OF PRODUCING THE DISPLAY PANEL - A substrate for a display panel by which a boundary position of divided exposure regions of elements formed by divisional exposure can be easily identified and process management and evaluation can be easily performed, a display panel having the substrate, a method of producing the substrate, and a method of producing the display panel. A substrate | 2009-11-19 |
20090283768 | ARRAY SUBSTRATE OF TFT-LCD AND A METHOD FOR MANUFACTURING THE SAME - The present invention relates to an array substrate of TFT-LCD and Method for manufacturing the same. The array substrate includes: gate lines, data lines, pixel electrodes and TFTs formed on a substrate; and a grid graph formed on each of the pixel electrode to make each of the pixel electrodes be simultaneously a built-in polarizer and change natural lights into linear polarized lights. The method for manufacturing an array substrate includes: forming a graph including gate electrodes and gate lines on a substrate; depositing continuously a gate insulating layer, a semiconductor layer and a doped semiconductor layer, and forming graphs of semiconductor layers and doped semiconductor layers above the gate electrodes; forming graphs of source electrodes, drain electrodes, data lines and pixel electrodes, in which a grid graph formed on each of the pixel electrode to make each of the pixel electrodes be simultaneously a built-in polarizer and change natural lights into linear polarized lights. In the present invention, there is no need to attach polarizer of absorption type to the array substrate after being disposed with the color filter substrate as a cell, thereby reducing the production cost of the TFT-LCD, and which is propitious to reduce the thickness of the TFT-LCD and increase the power utilization efficiency greatly of LCD. | 2009-11-19 |
20090283769 | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY AND A PHOTOLITHOGRAPHY METHOD FOR FABRICATING THIN FILMS - A gate wire including a plurality of gate lines and gate electrodes in the display area, and gate pads in the peripheral area is formed on a substrate having a display area and a peripheral area. A gate insulating layer, a semiconductor layer, an ohmic contact layer and a conductor layer are sequentially deposited, and the conductor layer and the ohmic contact are patterned to form a data wire including a plurality of data lines, a source electrode and a drain electrode of the display area and data pads of the peripheral area, and an ohmic contact layer pattern thereunder. A passivation layer is deposited and a positive photoresist layer is coated thereon. The photoresist layer is exposed to light through one or more masks having different transmittance between the display area and the peripheral area. The photoresist layer is developed to form a photoresist pattern having the thickness that varies depending on the position. At this time, a thin portion and a thick portion of the photoresist pattern are provided for the display area, and a thick portion and a zero thickness portion for the peripheral area. In the peripheral area, the portions of the passivation layer, the semiconductor layer and the gate insulating layer on the gate pads, and the portions of the passivation layer on the data pads, under the zero thickness portion, are removed. In the display area, the thin portion of the photoresist pattern, and the portions of the passivation layer and the semiconductor layer thereunder are removed but the portions of the passivation layer under the thick portions of the photoresist pattern is not removed. Then, a plurality of pixel electrodes, redundant gate pads and redundant data pads are formed. | 2009-11-19 |
20090283770 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes. | 2009-11-19 |
20090283771 | Thin film transistor - A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions. | 2009-11-19 |
20090283772 | PHOTO SENSITIVE UNIT AND PIXEL STRUCTURE AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME - A pixel structure suitable for being disposed on a substrate is provided. The pixel structure includes a display unit and a photo sensitive unit. The display unit includes an active device and a pixel electrode. The active device is disposed on the substrate, and the pixel electrode is electrically connected to the active device. The photo sensitive unit includes a photocurrent readout unit, a shielding electrode, a photosensitive dielectric layer, and a transparent electrode. The shielding electrode is electrically connected to the photocurrent readout unit, and the photosensitive dielectric layer is disposed on the shielding electrode. The transparent electrode is disposed on the photosensitive dielectric layer that is interposed between the shielding electrode and the transparent electrode. | 2009-11-19 |
20090283773 | Production Method of Semiconductor Device and Semiconductor Device - To provide a method for producing a high-performance semiconductor device by a simple and low-temperature process. The method for producing a semiconductor device, in accordance with the present invention, is a production method of a semiconductor device including a first insulating film, a semiconductor layer, and a second insulating film in this order on a substrate, the method including the steps of: forming a first insulating film including a hydrogen barrier layer; forming a semiconductor layer on a region where the hydrogen barrier layer of the first insulating film is formed; injecting hydrogen into the semiconductor layer; forming a second insulating film, the second insulating film including a hydrogen barrier layer on at least a region where the semiconductor layer is formed; and subjecting the semiconductor layer to hydrogenation annealing. | 2009-11-19 |
20090283774 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MAKING THE SAME - An organic light emitting display and a method for making the same includes protection circuitry to avoid damage from static electricity. The display and method allow performing a lighting test during display manufacturing. The organic light emitting display includes a substrate, a display region on the transparent substrate with a matrix of pixels, and a signal transfer unit on the transparent substrate for transferring lighting test signals to the pixels. The signal transfer unit includes transistors for transferring the lighting test signals and a resistor coupled to drains and gates of the transistors for protecting the transistors against damage from static electricity. | 2009-11-19 |
20090283775 | SEMICONDUCTOR DEVICE - Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented. | 2009-11-19 |
20090283776 | WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and a second trench in a source electrode part (Schottky diode part) are disposed so that the first and second trenches are close to each other while and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a wide band gap semiconductor device which is small in size and low in on-resistance and loss, and in which electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage to thereby increase avalanche breakdown tolerance at turning-off time. | 2009-11-19 |
20090283777 | MULTIFACED MICRODEVICE SYSTEM ARRAY - A multisurfaced microdevice system array is produced from a wafer formed of semiconductor substrate material. Sensing, controlling and actuating microdevices are fabricated at specific location on both sides of the wafer, and the wafer is diced. Each die thus created is then formed into a multisurfaced, multifaced structure having outer and inner faces. The multifaced structure and the microdevices form a standardized microdevice system, and cooperatively combined microdevice systems form a microdevice system array. Communication of energy and data to and between microdevices on each and other microdevice systems of the microdevice system array is provided by energy transferring devices including electric conductors for transferring electric energy, ultrasound emitters and receivers for transferring acoustic energy, and electromagnetic energy emitters and receivers for transferring electromagnetic energy. | 2009-11-19 |
20090283778 | Electroluminescent display useful for displaying a predetermined pattern - An electroluminescent display comprising semiconductor nanocrystals, wherein the semiconductor nanocrystals are selected to emit light at a predetermined wavelength and are disposed in a predetermined pattern. In certain embodiments, semiconductor nanocrystals that emit light at different predetermined wavelengths are disposed in the display to create a predetermined multi-color pattern. | 2009-11-19 |
20090283779 | LIGHT SOURCE WITH NEAR FIELD MIXING - A light emitting diode (LED) component comprising a submount with an array of LED chips and a lens over the array of LED chips. A diffuser is arranged so that at least some light from the LEDs passes through the diffuser to mix the LED light in the near field. The light passing through the diffuser appears as a mixture of LED chip light when directly viewed. A lighting device is also disclosed comprising an LED component comprising an array of LED chips and a near field diffuser to mix at least some of the light from the LED chips in the near field. A remote reflector is included to reflect at least some the light from the LED component so that is emits from the lighting device in the desired direction. | 2009-11-19 |
20090283780 | ILLUMINATION SYSTEM - An illumination system has a mounting substrate ( | 2009-11-19 |
20090283781 | Mini V SMD - In one embodiment, a surface-mount device comprises a casing having opposed, first and second main surfaces, side surfaces, and end surfaces. A lead frame partially encased by the casing comprises (1) an electrically conductive LED chip carrier part having a surface carrying a linear array of LEDs adapted to be energized to produce in combination a substantially full range of colors, each LED having a first electrical terminal and a second electrical terminal, the first terminal of each of the LEDs being electrically and thermally coupled to the chip carrying surface of the chip carrier part; and (2) electrically conductive connection parts separate from the chip carrier part, each of the connection parts having a connection pad, the second terminal of each of the LEDs being electrically coupled to the connection pad of a corresponding one of the connection parts with a single wire bond. The linear array of LEDs extends in a first direction, and each of the chip carrier part and connection parts has a lead. The leads may be disposed in parallel relationship with each other and extend through the end surfaces of the casing in a second direction, the second direction being orthogonal to the first direction. An array of the surface-mount devices may be used in an LED display such as an indoor LED screen. | 2009-11-19 |
20090283782 | Nitride Semiconductor Device - There is provided a nitride semiconductor light emitting device having a vertical type device in which a pair of electrodes is formed on both sides of a chip, by using a semiconductor substrate, and having high luminous efficiency by using Mg | 2009-11-19 |
20090283783 | Optoelectronic Semiconductor Chip and Method for Producing It - An optoelectronic semiconductor chip ( | 2009-11-19 |
20090283784 | SIDE-VIEW LIGHT EMITTING DIODE - An exemplary side-view light emitting diode (LED) includes a substrate, a housing, a LED chip, a capsulation material and a reflecting layer. The housing and the substrate cooperatively form a receiving space therebetween. The LED chip is received in the receiving space and electrically connected with the substrate. The capsulation material is filled in the receiving space and encapsulates the LED chip in the housing. An indent is defined in a top portion of the capsulation material to cave a top surface of the capsulation material. The reflecting layer is spread on the top surface of the capsulation material. The light emitted from the LED chip upwardly towards the top surface of the capsulation material is reflected to a lateral side of the housing by the reflecting layer. The indent has a horizontal section with a size decreased along a top-to-bottom direction. The housing has a diameter gradually increased along the top-to-bottom direction. | 2009-11-19 |
20090283785 | LIGHT EMITTING DIODE PACKAGE - There is provided a light emitting diode (LED) package in which a phosphor layer encapsulating an LED chip is formed uniformly to facilitate a process. The LED package includes: a package body having a mounting area; a holding part mounted on the mounting area to expose a portion of the mounting area; an LED chip mounted on the mounting area, the LED chip surrounded by the holding part to emit light; and a phosphor layer held by the holding part to seal a space defined by the holding part, the phosphor layer converting a wavelength of the light from the LED chip. | 2009-11-19 |
20090283786 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device includes: a light emitting element which includes a first electrode layer, a second electrode layer, and a light emitting function layer disposed between the first electrode and the second electrode; a reflection layer which reflects light emitted from the light emitting function layer toward the light emitting function layer; and a translucent transflective layer which is disposed opposite the reflection layer with the light emitting function layer interposed therebetween to reflect some of the light emitted from the light emitting function layer toward the light emitting function layer and to transmit the remainder of the light. The translucent transflective layer is centered between a first layer having a refractive index n | 2009-11-19 |
20090283787 | SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described. | 2009-11-19 |
20090283788 | Light-Emitting Diode Chip Package Body and Method for Manufacturing Same - A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are disclosed. A LED chip package body is provided, the LED chip package body comprising: a LED chip having an electrode-side surface and at least two electrodes mounted on said electrode-side surface; an electrode-side insulating layer formed on said electrode-side surface of said LED chip and formed with a plurality of through-holes registered with corresponding said electrodes; a highly heat-dissipating layer formed in each of said through-holes of said insulating layer on said electrode-side surface; and a highly heat-conducting metal layer formed on said highly heat-dissipating layer in each of said through-holes. | 2009-11-19 |
20090283789 | Semiconductor Light Emitting Device - The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval. | 2009-11-19 |
20090283790 | CIRCUIT SUBSTRATE AND LIGHT EMITTING DIODE PACKAGE - A circuit substrate including a base layer and a plurality of lead units arranged as an array is provided, wherein the base layer has a plurality of through grooves, and the lead units are disposed on the base layer. Each of the lead units includes a common terminal and at least three leads. The common terminal is capable of being divided into a plurality of electrodes connected with each other. The leads are extended outwards from the edge of the common terminal, and each of the leads is extended outwards from the edge of one of the electrodes. The through grooves expose the common terminals of the lead units. | 2009-11-19 |
20090283791 | MULTILAYERED LEAD FRAME FOR A SEMICONDUCTOR LIGHT-EMITTING DEVICE - A lead frame ( | 2009-11-19 |
20090283792 | SIDE VIEW LIGHT EMITTING DIODE PACKAGE - A side view LED package for a backlight unit includes a package body having a cavity with an inclined inner sidewall, first and second lead frames arranged in the package body, the cavity of the package body exposing a portion of at least one of the first and second lead frames placed in a bottom of the cavity to outside, a light emitting diode chip mounted on the bottom of the cavity to be electrically connected to the first and second lead frames, and a transparent encapsulant arranged in the cavity surrounding the light emitting diode chip. The cavity has a depth larger than a mounting height of the light emitting diode chip and not exceeding six times of the mounting height. The height of the sidewall is shortened to improve beam angle characteristics of emission light, increase light quantity, and prevent a molding defect of the sidewall. | 2009-11-19 |
20090283793 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed. | 2009-11-19 |
20090283794 | CURABLE RESIN MATERIAL COMPOSITION, OPTICAL MATERIAL, LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - A curable resin material composition includes an addition-polymerization-curable silicone resin material that gives a silicone resin having a glass transition temperature of 50° C. or less when cured, the addition-polymerization-curable silicone resin material including, a SiH-group-containing siloxane-based compound containing a SiH group where a silicon atom is bonded to a hydrogen atom, a C═C-bond-containing siloxane-based compound containing a carbon-carbon double bond capable of effecting addition reaction with the SiH group, and a hydrosilylation addition reaction catalyst; and a non-reactive siloxane-based compound that does not react with the SiH-group-containing siloxane-based compound or the C═C-bond-containing siloxane-based compound, that is compatible with the addition-polymerization-curable silicone resin material, and that has a pour point of 0° C. or less. | 2009-11-19 |
20090283795 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP - Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. | 2009-11-19 |
20090283796 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power semiconductor is a vertical insulated gate bipolar transistor with injection efficiency adjustment formed by highly doped n+ islands in a p+ anode layer. The device has a vertical drift region of a first conductivity type and having vertical first and second ends. In one example, a region of the second conductivity type is provided at the second end of the vertical drift region connected directly to the vertical high voltage terminal. In another example, a vertical buffer region of the first conductivity type is provided at the vertical second end of the vertical drift region and a vertical region of a second conductivity type is provided on the other side of the vertical buffer region and connected to the vertical high voltage terminal. A plurality of electrically floating lateral island regions are provided within the vertical drift region at or towards the vertical second end of the vertical drift region, the plurality of electrically floating lateral island regions being of the first conductivity type and being more highly doped than the drift region. | 2009-11-19 |