48th week of 2011 patent applcation highlights part 15 |
Patent application number | Title | Published |
20110291041 | METHOD FOR SINTERING LITHIUM CONTAINED ELECTRODE MATERIAL - A method for sintering lithium contained electrode material includes: depositing a mixture of a particle like lithium compound and a substance M in a metal container, where M is a chemical element selected from a group consisting of iron (Fe), phosphor (P), cobalt (Co), nickel (Ni), manganese (Mn), vanadium (V), and carbon (C), or an oxide or compound thereof; subjecting the mixture deposited in the metal container to heat treatment by heating the metal container in two phases of which temperature ranges for heating are respectively 300-700° C. and 500-900° C.; and grinding the mixture so heat-treated to obtain a powder like lithium contained electrode material. According to the method of the present invention, in the process of sintering and synthesis, it is not necessary to supply an external (or a great amount of) protective gas, so that substantial reduction of processing cost and time is realized. | 2011-12-01 |
20110291042 | CATHODE ACTIVE MATERIAL FOR LITHIUM BATTERY AND METHOD FOR MAKING THE SAME - The present disclosure relates to a cathode active material for lithium battery including a metal oxide represented by a formula of LiNi | 2011-12-01 |
20110291043 | Aluminum Substituted Mixed Transition Metal Oxide Cathode Materials for Lithium Ion Batteries - A mixed transition metal oxide is provided described wherein Aluminum is partially substituted for Cobalt in a Li[Ni | 2011-12-01 |
20110291044 | NICKEL-COBALT-MANGANESE MULTI-ELEMENT LITHIUM ION BATTERY CATHODE MATERIAL WITH DOPANTS AND ITS METHODS OF PREPARATION - The present invention discloses a high compact density nickel-cobalt-manganese multi-element lithium ion battery cathode material with dopants and methods of its preparation. A preparation method of this battery cathode material is as follows: (A) preparing a nickel-cobalt-manganese multi-element intermediate with dopants by co-precipitation or chemical synthesis; (B) preparing a mixture by mixing said multi-element intermediate with a lithium salt; (C) pre-treating the said mixture, then adding into it polyvinyl alcohol and mixing uniformly; (D) pressing the resulting material into lumps, calcining the lumps at 800˜950° C., cooling after its removal from the furnace, crushing, passing through a 400 mesh sieve; (E) calcining the resulting power at 700˜800° C., cooling after its removal from the furnace, crushing and sieving to obtain a product. The lithium battery cathode material obtained using the above-described method has the formula LiNi | 2011-12-01 |
20110291045 | THIXOTROPIC ANHYDROUS SHEAR THINNING PEROXIDE DISPERSIONS - Provided are dispersions which comprise more than about up to 55 percent by weight or more of an organic peroxide which is normally solid in an anhydrous liquid phase such as dibutyl maleate or dioctyl adipate, with about 5% by weight or more fumed silica to provide a thixotropic, storage stable organic peroxide paste. Addition of about 5 weight % or more of fumed silica was found to result in the formation of a shear thinning anhydrous dispersion of organic peroxide which was storage stable. | 2011-12-01 |
20110291046 | SILICONE POLYMER DESICCANT COMPOSITION AND METHOD OF MAKING THE SAME - A molded article including a blend of a self supporting silicone polymer and a sorbent, wherein the sorbent is homogeneously dispersed within the silicone polymer. A method of forming a molding composition including a silicone polymer and a sorbent, wherein the silicone polymer includes a first silicone material and a second silicone material, the first silicone material being different than the second silicone material, the method including the steps of: a) blending the first silicone material and the sorbent into a first blended composition, wherein the sorbent is homogeneously dispersed within the first silicone material; b) blending the second silicone material and the sorbent into a second blended composition, wherein the sorbent is homogeneously dispersed within the second silicone material; and, c) blending the first and second blended composition to form the molding composition, wherein the sorbent is homogeneously dispersed within the molding composition and the molding composition is heat curable. | 2011-12-01 |
20110291047 | Trans-Monofluoroethylene Liquid Crystal Compound Having Negative Dielectric Anisotropy, A Liquid Crystal Composition Using The Compound And A Liquid Crystal Display Device - A liquid crystal compound having general physical properties necessary for a liquid crystal compound, a high stability to heat, light or the like, a small viscosity, a suitable refractive index anisotropy, a suitable dielectric anisotropy and steep electro-optic characteristics, a wide temperature range of a nematic phase and an excellent compatibility with other liquid crystal compounds, and a liquid crystal compound especially having a wide temperature range of a nematic phase. A compound represented by formula (1). | 2011-12-01 |
20110291048 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a large optical anisotropy, a large dielectric anisotropy, a large specific resistance, high stability to ultraviolet light and high stability to heat, or having a suitable balance regarding at least two of the characteristics. Provided is an AM device having a short response time, a large voltage holding ratio, a large contrast ratio, a long service life, etc. The liquid crystal composition having a nematic phase includes a specific three-ring or four-ring compound having a high maximum temperature and a large dielectric anisotropy as a first component, and a specific compound having a small viscosity or a high maximum temperature of the nematic phase as a second component, and a liquid crystal display device contains the composition. | 2011-12-01 |
20110291049 | INDIUM ARSENIDE NANOCRYSTALS AND METHODS OF MAKING THE SAME - The present invention provides high quality monodisperse or substantially monodisperse InAs nanocrystals in the as-prepared state. In some embodiments, the as-prepared substantially monodisperse InAs nanocrystals demonstrate a photoluminescence of between about 700 nm and 1400 nm. | 2011-12-01 |
20110291050 | LONG-LASTING PHOSPHOR CERAMICS AND MANUFACTURINGMETHOD THEREOF - Provided is a method for manufacturing MAl | 2011-12-01 |
20110291051 | Reactor With Reactor Head And Integrated Valve - A reactor with minimal dead volume especially suited to reverse-flow applications comprises: a) a reactor body; b) a first head engaged with said reactor body; c) a first conduit extending from outside said head to at least partially through said head; and d) a first valve in flow communication with said first conduit controlling fluid flow along a flow path extending from the first valve and through the reactor body. The reactor is especially suited for use in a process for rapid stream-switching of at least two streams in a reverse-flow reactor. | 2011-12-01 |
20110291052 | APPARATUS AND METHOD FOR SUPPLYING AMINE USING THERMAL DECOMPOSITION - Provided are an apparatus for supplying amine, including: transfer pipe through which amine is transferred; a heat wire which heats the amine that flows through the transfer pipe; a temperature control sensor which controls the temperature in the transfer pipe; and a product recovery valve which recovers product resulting from thermal decomposition of the amine, and a method for supplying amine using the same. The apparatus and method for supplying amine are capable of economically and effectively supplying amine utilizing the thermal decomposition properties of the amine, and may be used to supply amine, for example, to circulating water for power plants. | 2011-12-01 |
20110291053 | SHRINKAGE-REDUCING AGENT FOR HYDRAULIC MATERIAL AND SHRINKAGE-REDUCING AGENT COMPOSITION FOR HYDRAULIC MATERIAL - Provided are a shrinkage-reducing agent for a hydraulic material and a shrinkage-reducing agent composition for a hydraulic material including a compound represented by the general formula (1): R | 2011-12-01 |
20110291054 | POLYMERIC FUSED THIOPHENE SEMICONDUCTOR FORMULATION - A formulation including:
| 2011-12-01 |
20110291055 | PRODUCTION PROCESS FOR LITHIUM-SILICATE-SYSTEM COMPOUND - The present invention is one which provides a production process for lithium-silicate-system compound, the production process being characterized in that: a lithium-silicate compound being expressed by Li | 2011-12-01 |
20110291056 | PREPREG AND CARBON FIBER REINFORCED COMPOSITE MATERIALS - A prepreg containing a carbon fiber [A] and a thermosetting resin [B], and in addition, satisfying at least one of the following (1) and (2). | 2011-12-01 |
20110291057 | METHOD OF PRODUCING HYBRID POLYMER-INORGANIC MATERIALS - Hybrid composite materials with multiscale morphologies are formed by doping polymer submicrometer spheres with semiconductor or metal (e.g. CdS or Ag, respectively) nanoparticles and using these doped microspheres as functional building blocks in production of hybrid periodically structured materials. The preparation of hybrid polymer particles include the following stages: (i) synthesis of monodisperse polymer microspheres, (ii) in-situ synthesis of the inorganic nanoparticles either on the surface, or in the bulk with polymer beads, and (iii) encapsulation of hybrid microspheres with a hydrophobic shell. | 2011-12-01 |
20110291058 | TRANSPARENT CONDUCTIVE FILM AND CONDUCTIVE SUBSTRATE USING THE SAME - A transparent conductive film ( | 2011-12-01 |
20110291059 | DIELECTRIC FLUID COMPOSITION CONTAINING VEGETABLE OILS AND FREE OF ANTIOXIDANTS - A dielectric fluid composition containing of 60% to 63% in weight of mono-unsaturated fatty acid, of 20% to 23% in weight of di-unsaturated fatty acid, of 5% to 7% in weight of tri-unsaturated fatty acid, and of 6% to 8% in weight of saturated fatty acid, such that the dielectric fluid is free of antioxidants and/or external additives and has the following properties: a dielectric strength of 40 kV to 70 kV at a separation of 2 mm, a dielectric constant of 2.5 to 3.1 at 25° C., and a dissipation factor of 0.05% to 0.15% at 25° C. The dielectric fluid composition can be obtained by a combination of 95.5% to 99.25% in weight of at least one high oleic vegetable oil, of 0.25% to 1.5% in weight of grape seed oil, of 0.25% to 1.5% in weight of sesame seed oil, and of 0.25% to 1.5% in weight of rice bran oil. | 2011-12-01 |
20110291060 | LOW PROFILE SCISSOR JACK - A scissor jack assembly may have a base member for resting the jack assembly against a supporting surface and a support bracket assembly. First and second lower arm members may each be of an open channel construction with a width extending between a pair of outer sidewalls. One end of each lower arm member may be connected to the base plate. First and second upper arm members may each be of an open channel construction having a width extending between a pair of outer sidewalls. One end of each outer one end may be connected to the support bracket assembly. First and second trunnions may connect the upper arms with the lower arms. Each of the trunnions may include a bore. A rotatable shaft member may extend into the bores of the first and second trunnions. | 2011-12-01 |
20110291061 | High Tonnage Winch Systems and Methods - In one preferred form of the present invention, shown in FIG. | 2011-12-01 |
20110291062 | SELF HELP LADDER AND SECURING DEVICE - An apparatus and method for one person to safely and easily deploy a tree stand or stand to a pole or a tree. | 2011-12-01 |
20110291063 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a word line interconnect layer, a bit line interconnect layer and a pillar. The word line interconnect layer includes a plurality of word lines extending in a first direction. The bit line interconnect layer includes a plurality of bit lines extending in a second direction intersecting with the first direction. The pillar is disposed between each of the word lines and each of the bit lines. The pillar has a selector stacked film containing silicon, and a variable resistance film disposed on a side of the word lines or the bit lines. The selector stacked film has a different component-containing layer. The different component-containing layer is formed at one position in a region excluding ends on the sides of the word and bit lines, and contains a 14 group element having a larger atomic radius than an atomic radius of silicon. | 2011-12-01 |
20110291064 | RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS - Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode. | 2011-12-01 |
20110291065 | PHASE CHANGE MEMORY CELL STRUCTURES AND METHODS - Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material. | 2011-12-01 |
20110291066 | Nonvolatile Memory Devices Having Cells with Oxygen Diffusion Barrier Layers Therein and Methods of Manufacturing the Same - A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides. | 2011-12-01 |
20110291067 | Threshold Device For A Memory Array - A threshold device including a plurality of adjacent tunnel barrier layers that are in contact with one another and are made from a plurality of different dielectric materials is disclosed. A memory plug having first and second terminals includes, electrically in series with the first and second terminals, the threshold device and a memory element that stores data as a plurality of conductivity profiles. The threshold device is operative to impart a characteristic I-V curve that defines current flow through the memory element as a function of applied voltage across the terminals during data operations. The threshold device substantially reduces or eliminates current flow through half-selected or un-selected memory plugs and allows a sufficient magnitude of current to flow through memory plugs that are selected for read and write operations. The threshold device reduces or eliminates data disturb in half-selected memory plugs and increases S/N ratio during read operations. | 2011-12-01 |
20110291068 | FIELD EFFECT TRANSISTOR MANUFACTURING METHOD, FIELD EFFECT TRANSISTOR, AND SEMICONDUCTOR GRAPHENE OXIDE MANUFACTURING METHOD - A semiconductor device is provided and includes a conductive substrate, an insulating film formed on the conductive substrate, a base layer including amino groups, and a reduced graphene oxide layer formed on the base layer. | 2011-12-01 |
20110291069 | Light-emitting devices and methods of manufacturing the same - Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer. | 2011-12-01 |
20110291070 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern. | 2011-12-01 |
20110291071 | QUANTUM DOT LIGHT EMITTING DIODE DEVICE AND DISPLAY DEVICE THEREWITH - The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith. | 2011-12-01 |
20110291072 | SEMICONDUCTOR DIES, LIGHT-EMITTING DEVICES, METHODS OF MANUFACTURING AND METHODS OF GENERATING MULTI-WAVELENGTH LIGHT - A semiconductor die includes at least one first region and at least one second region. The at least one first region is configured to emit light having at least a first wavelength. The at least one second region is configured to emit light having at least a second wavelength, which is different from the first wavelength. | 2011-12-01 |
20110291073 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 2011-12-01 |
20110291074 | Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same - A structure and method for producing same provides a solid-state light emitting device with suppressed lattice defects in epitaxially formed nitride layers over a non-c-plane oriented (e.g., semi-polar) template or substrate. A dielectric layer with “window” openings or trenches provides significant suppression of all diagonally running defects during growth. Posts of appropriate height and spacing may further provide suppression of vertically running defects. A layer including gallium nitride is formed over the dielectric layer, and polished to provide a planar growth surface with desired roughness. A tri-layer indium gallium nitride active region is employed. For laser diode embodiments, a relatively thick aluminum gallium nitride cladding layer is provided over the gallium nitride layer. | 2011-12-01 |
20110291075 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND BIOSENSOR - Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated. | 2011-12-01 |
20110291076 | ARTICLES CONTAINING COATINGS OF AMIC ACID SALTS - An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices. | 2011-12-01 |
20110291077 | Enhanced Semiconductor Devices Employing Photoactive Organic Materials And Methods Of Manufacturing Same - Methods and apparatus provide for a transistor, including: a semiconductor layer including molecules, protons, and/or ions, etc. diffused therein from a photoactive material; a channel disposed on or in the semiconductor layer; a source disposed on or in the semiconductor layer; a drain disposed on or in the semiconductor layer; and a gate electrically coupled to the semiconductor layer. | 2011-12-01 |
20110291078 | OTFT USING PAPER AS SUBSTRATE AND SILK PROTEIN AS INSULATING MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer. | 2011-12-01 |
20110291079 | SURFACE PLASMON-MEDIATED ENERGY TRANSFER OF ELECTRICALLY-PUMPED EXCITONS - An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye adjacent the outer surface of the second electrode such that the second electrode is disposed between the dye and the active organic semiconductor. A voltage applied by the power source across the first and second electrodes causes energy to couple from decaying dipoles into surface plasmon polariton modes, which then evanescently couple to the dye to cause the light to be emitted. | 2011-12-01 |
20110291080 | Electronic Device - An electronic device comprising a substrate, a first electrode, at least one organic functional layer, and a second electrode is indicated. The organic functional layer comprises a first, a second, and a third matrix material, wherein the first matrix material has a larger band gap than the second and the third matrix materials. | 2011-12-01 |
20110291081 | MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - An organic EL device material includes at least a unit including 3,5-biscarbazolylphenyl group, a unit including 4-carbazolylphenyl group, and a compound including a unit including a nitrogen-containing aromatic heterocyclic ring bonding the unit including 3,5-biscarbazolylphenyl group and the unit including 4-carbazolylphenyl group. | 2011-12-01 |
20110291082 | ORGANIC LIGHT EMITTING ELEMENT - An organic light emitting element includes a pair of electrodes at least one of which has visible light transmittance; and an organic EL layer provided between the pair of electrodes. The organic EL layer includes at least an organic light emitting layer that emits light when a voltage is applied between the pair of electrodes. The organic light emitting layer includes an electron transport host material; and at least first and second guest materials. Each of the first and second guest materials has an emission peak in a blue to blue-green color region. The electron transport host material has an ionization potential (IPH) and an electron affinity (AFH), and the first guest material has an ionization potential (IPG1) and an electron affinity (AFG1) that satisfy Expression (1): IPH≦IPG1 and AFH2011-12-01 | |
20110291083 | ORGANOMETALLIC COMPLEX COMPOUNDS FOR PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device and an organic photoelectric device, the compound being represented by the following Chemical Formula 1: | 2011-12-01 |
20110291084 | Display Device and Backplane - A display device comprises a plurality of electroluminescent display pixels and a plurality of semiconductor elements (“chiplets”), each pixel being electrically connected to the output of one or more of said semiconductor elements through a via hole in an electrically insulating layer for addressing the plurality of display pixels, and a plurality of colour filters and/or downconverters. The colour filters and/or downconverters and the semiconductor elements are provided on the same surface of the device. | 2011-12-01 |
20110291085 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE - A method for manufacturing a light-emitting element. An anode is formed on a main surface of a substrate. A hole-injection layer is formed at least above the anode. At least the hole-injection layer is covered with a protective film. A bank which is provided with an aperture through which a portion of the protective film is exposed, is formed on the protective film by a wet process. The portion of the protective film exposed through the aperture is removed so that a portion of the hole-injection layer is exposed, a light-emitting layer is formed on the hole-injection layer exposed through the aperture, and a cathode is formed above the light-emitting layer. The protective film is resistant to a fluid used during the wet process. | 2011-12-01 |
20110291086 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE COMPRISING LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - A hole injection layer and a light-emitting layer are laminated between a first electrode and a second electrode of a light emitter. A bank defines an area in which the light-emitting layer is to be formed. In the area defined by the bank, a hole injection layer has a recess in an upper surface thereof. An upper peripheral edge of the recess is covered with a part of the bank. | 2011-12-01 |
20110291087 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - A light emitter and a method of manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by a bank that has at least one liquid-repellent surface. The charge injection transport layer is principally composed of a metal compound that is more liquid-philic than the surface of the bank. The charge injection transport layer includes a recessed structure so that in a region defined by the bank, the charge injection transport layer is lower than a bottom surface of the bank. | 2011-12-01 |
20110291088 | Light Emitting Device - It is an object of the invention to provide a light emitting device which can display a superior image in which luminescent color from each light emitting layer is beautifully displayed and power consumption is lowered in a light emitting element in which light emitting layers are stacked. One feature of the invention is that, in a light emitting element which comprises light emitting layers stacked between electrodes, each distance between each light emitting layer and an electrode is approximately oddly multiplied ¼ wavelength by controlling a thickness of a layer provided therebetween to enhance luminous output efficiency. Another feature of the invention is that a drive voltage is lowered using a high conductive material for the layer compared with a conventional element. | 2011-12-01 |
20110291089 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air. | 2011-12-01 |
20110291090 | Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device - A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode. | 2011-12-01 |
20110291091 | Organic Light Emitting Display - In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio of a pixel, to easily solve the problem of IR drops by controlling the area or thickness of the conductive layer, and to easily secure the electrostatic capacity of the capacitor. In particular, in the case of a front surface light emitting structure, since a capacitor of a metal/insulating layer/metal (MIM) structure may be formed in a light emitting region, enough aperture ratio and electrostatic capacity may be secured. Therefore, a high resolution organic light emitting display may be easily realized, and enough aperture ratio and electrostatic capacity are secured so as to realize high picture quality. | 2011-12-01 |
20110291092 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer. | 2011-12-01 |
20110291093 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a semiconductor device including a thin film transistor comprising a microcrystalline semiconductor which forms a channel formation region and includes an acceptor impurity element, and to a manufacturing method thereof. A gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor layer which is formed over the gate insulating film and is formed of a microcrystalline semiconductor, a second semiconductor layer which is formed over the first semiconductor layer and includes an amorphous semiconductor, and a source region and a drain region which are formed over the second semiconductor layer are provided in the thin film transistor. A channel is formed in the first semiconductor layer when the thin film transistor is placed in an on state. | 2011-12-01 |
20110291094 | DISPLAY PANEL - A display panel including a first substrate, a second substrate opposite to the first substrate and a display medium between the first substrate and the second substrate is provided. The first substrate has a scan line, a data line and an active device electrically connected to the scan line and the data line. The second substrate has a common electrode layer, an insulting layer covering the common electrode layer, a pixel electrode on the insulating layer and a contact structure on the insulating layer. More specifically, the contact structure is electrically connected to the pixel structure and electrically connected to the active device on the first substrate. | 2011-12-01 |
20110291095 | DISPLAY DEVICE - A display device including a display panel including a first pixel area and a second pixel area adjacent to the first pixel area; and a barrier positioned on a surface of the display panel, the barrier including: a first sub-barrier; and a second sub-barrier, wherein the first sub-barrier and the second sub-barrier are disposed between the first pixel area and the second pixel area to respectively cover an end of the first pixel area and an end of the second pixel area, in which the first pixel area and the second pixel area display a same first image, or the first pixel area displays any one of a first left-eye image and a first right-eye image and the second pixel area displays the other one of the first left-eye image and the first right-eye image. | 2011-12-01 |
20110291096 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole. | 2011-12-01 |
20110291097 | TFT ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY PANEL - An embodiment of the present invention provides a TFT array substrate, in which TFT elements and pixel electrodes being correspondingly connected with the TFT elements are arrayed in matrix on an insulating substrate, the TFT array substrate including: gate bus lines made from a first metal material; source bus lines made from a second metal material; pixel electrodes made from a third metal material; a clock wiring made from the first metal material; a branch wiring made from the second metal material; and a connection conductor made from the third metal material, the connection conductor connecting the clock wiring and the branch wiring at a connection part in a periphery area, the connection part having a branch-wiring via hole, which exposes the branch wiring which is covered with the connection conductor, and overlaps the clock wiring at least partly in a plane view. | 2011-12-01 |
20110291098 | ORGANIC EL DISPLAY DEVICE, MOTHER SUBSTRATE OF ORGANIC EL DISPLAY DEVICE, AND METHOD OF TESTING ORGANIC EL DISPLAY DEVICE - A first resistance element (R | 2011-12-01 |
20110291099 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate line on the gate electrode. A transparent conductive layer and a source metallic layer are deposited in sequence on the base substrate having the channel pattern. A source electrode and a drain electrode of the switching device, a pixel electrode and a source line electronically connected to the drain electrode, are formed by a second photoresist pattern. A first protective insulation layer is formed, and the first protective insulation layer on the pixel electrode is removed by a third photoresist pattern. Therefore, by the three masks process yields a simplified manufacturing process in which the lower portion of the source metallic pattern is not formed and display quality is improved. | 2011-12-01 |
20110291100 | DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BURIED STRAIN MEMORIZATION LAYER - A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material. | 2011-12-01 |
20110291101 | Display and manufacturing method of the same - A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode. | 2011-12-01 |
20110291102 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY - A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole. | 2011-12-01 |
20110291103 | TRENCH SIDEWALL CONTACT SCHOTTKY PHOTODIODE AND RELATED METHOD OF FABRICATION - A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer. The Schottky photodiode may include a metal filler in the parallel spaced apart trenches to form a Schottky rectifying contact with the doped epitaxial layer, an anode current distributor metal layer on a surface of the doped epitaxial layer and in electrical contact with the metal filler of the parallel spaced apart trenches, a dielectric passivation layer on the anode current distributor metal layer, and a conductive metal layer over the rear surface of the monocrystalline semiconductor substrate and configured to provide an ohmic contact with the cathode. | 2011-12-01 |
20110291104 | SMOOTHING METHOD FOR SEMICONDUCTOR MATERIAL AND WAFERS PRODUCED BY SAME - A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer. | 2011-12-01 |
20110291105 | SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING THE SAME - A semiconductor module according to the present invention includes: an insulating substrate ( | 2011-12-01 |
20110291106 | POWER SEMICONDUCTOR DEVICE - Provided is a power semiconductor device including: a power semiconductor element; a metal block as a first metal block that is connected to the power semiconductor element through an upper surface electrode pattern as a first upper surface electrode pattern selectively formed on an upper surface of the power semiconductor element; and a mold resin filled so as to cover the power semiconductor element and the metal block, wherein an upper surface of the metal block is exposed from a surface of the mold resin. | 2011-12-01 |
20110291107 | SELF-ALIGNED SEMICONDUCTOR DEVICES WITH REDUCED GATE-SOURCE LEAKAGE UNDER REVERSE BIAS AND METHODS OF MAKING - A vertical junction field effect transistor (VJFET) having a self-aligned pin, a p+/n/n+ or a p+/p/n+ gate-source junction is described. The device gate can be self-aligned to within 0.5 μm to the source in order to maintain good high voltage performance (i.e. low DIBL) while reducing gate-source junction leakage under reverse bias. The device can be a wide-bandgap semiconductor device such as a SiC vertical channel junction field effect. Methods of making the device are also described. | 2011-12-01 |
20110291108 | SEMICONDUCTOR PHOTODETECTOR WITH TRANSPARENT INTERFACE CHARGE CONTROL LAYER AND METHOD THEREOF - A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge; whereby the reduction or substantial cancellation of the surface charge in the first semiconductor layer increases the collection of photogenerated carriers by the photodetector. A method of improving the quantum efficiency of a semiconductor photodetector comprising providing a semiconductor photodetector having a first layer which has a first interface through which light first enters the semiconductor photodetector; placing a layer of polar material transparent to the band of detection wavelengths that has a polarization substantially different than the polarization of the first layer such that the polarization charge induced at the interface between the layer of polar material and the first surface results in decreased interface recombination of photogenerated minority carriers and an increase in quantum efficiency of the photodetector. | 2011-12-01 |
20110291109 | POLARIZATION ENHANCED AVALANCHE PHOTODETECTOR AND METHOD THEREOF - An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making. | 2011-12-01 |
20110291110 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench. | 2011-12-01 |
20110291111 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A chip size package includes: a radio frequency substrate having a radio frequency semiconductor circuit formed on a principal surface; a semiconductor cover substrate arranged at a position facing the principal surface of the radio frequency substrate; and a joining frame arranged in a manner such as to surround the radio frequency semiconductor circuit between the radio frequency substrate and the semiconductor cover substrate, the joining frame joining the radio frequency substrate and the semiconductor cover substrate, wherein: the radio frequency substrate further has a wire formed on a surface opposite to the principal surface; and the radio frequency semiconductor circuit and the wire are electrically connected to each other through a via hole penetrating through the radio frequency substrate in a thickness direction thereof. | 2011-12-01 |
20110291112 | NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING - Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described. | 2011-12-01 |
20110291113 | FILTER FOR A LIGHT EMITTING DEVICE - Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. In some embodiments, the structure further includes a metal nanoparticle array configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range. In some embodiments, the structure further includes a filter configured to pass a majority of light in a first wavelength range and reflect or absorb a majority of light in a second wavelength range, wherein the filter is configured such that a wavelength at which a minimum amount of light is passed by the filter shifts no more than 30 nm for light incident on the filter at angles between 0° and 60° relative to a normal to a major surface of the filter. | 2011-12-01 |
20110291114 | LED PACKAGE STRUCTURE - A light-emitting diode (LED) package structure includes a substrate, a first LED, a second LED, and a resin material. At least one enclosure made of a transparent material forms on a surface of the substrate, and encloses and forms at least one area on the substrate. The first LED and the second LED are disposed in the area and adjacent to each other, and the resin material is disposed in the area, and covers the first LED and the second LED. The LED package structure obtains desired illuminating lights by mixing lights respectively emitted by the first LED and the second LED. | 2011-12-01 |
20110291115 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display having first pixel power source lines receiving a pixel driving voltage from first power supply sources and second pixel power source lines arranged between the first pixel power source lines and receiving a pixel driving voltage from second power supply sources, the light emitting diode of each of a plurality of pixels included in an image display unit is divided into two, and the divided light emitting diodes are coupled to the different pixel power source lines so that brightness non-uniformity of the image display unit caused by the IR drops of the pixel power source lines is reduced or prevented. | 2011-12-01 |
20110291116 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display is disclosed. In one embodiment, the display includes i) a substrate, ii) a driving circuit formed on the substrate, iii) an organic light emitting diode formed on the substrate and electrically connected to the driving circuit, iv) an encapsulation thin film formed on the driving circuit and organic light emitting diode and v) a spacer formed on the substrate and surrounding the encapsulation thin film. | 2011-12-01 |
20110291117 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREFOR - A manufacturing method of an organic light emitting diode (OLED) display device includes forming a thin film transistor and an organic light emitting diode in a display area of a first substrate, forming a thin film encapsulation layer that has a layering structure of an organic film and an inorganic film on one substrate of the first substrate and a second substrate, forming a sealing member by coating a sealing material that includes an inorganic sealant and an organic compound on an edge of the second substrate, removing the organic compound of the sealing member by baking the sealing member, layering the second substrate on the first substrate so that the sealing member contacts the first substrate, dissolving the sealing member by using a laser beam, solidifying the sealing member, attaching the sealing member to the first substrate, and removing the second substrate from the sealing member. | 2011-12-01 |
20110291118 | Mother substrate for flat panel display apparatus and method of manufacturing the same - A mother substrate for forming flat panel display apparatuses and a method of manufacturing the same, the mother substrate including a substrate; a plurality of display units on the substrate, the display units being for forming a plurality of flat panel display apparatuses; a sealing substrate facing the display units; sealing members between the substrate and the sealing substrate, the sealing members surrounding each of the display units; a plurality of wiring units between the substrate and the sealing substrate, the wiring units overlapping the sealing members; a connecting unit including a conductive material, the connecting unit connecting adjacent wiring units in one direction and having a width that is greater than a width of each of the wiring units; and inlets connected to the plurality of wiring units and an external power source, the inlets being for applying a voltage to the plurality of wiring units. | 2011-12-01 |
20110291119 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is disclosed. The organic light emitting diode display includes a base substrate including a display area and a non-display area around the display area, a plurality of pixels formed over the display area of the base substrate, the plurality of pixels including a common electrode, a common power line formed over the base substrate and electrically connected to a circuit of each of the plurality of pixels, an encapsulation substrate bonded to the base substrate by a sealing member surrounding the plurality of pixels, the encapsulation substrate including an inner surface facing the base substrate, a first conductive layer formed over the inner surface and electrically connecting the common power line to a first potential, and a second conductive layer formed over the inner surface and spaced apart from the first conductive layer, the second conductive layer electrically connecting the common electrode to a second potential. | 2011-12-01 |
20110291120 | Light Emitting Devices Using Connection Structures And Methods Of Manufacturing The Same - Example embodiments of the present invention relate to a light emitting device having a connection structure and a method of manufacturing the light emitting device. The method of manufacturing may include forming a light emitting region and electrode layers on a substrate in which a plurality of cell regions and a bridge for partially connecting the cell regions are disposed, thereby providing a light emitting device that controls stress with relative ease and integrates electrical connections between the cell regions. | 2011-12-01 |
20110291121 | LIGHT EMITTING ELEMENT PACKAGE - A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate. | 2011-12-01 |
20110291122 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device with the substrate divided into three areas. A semiconductor layer is formed in the first second areas and includes a channel area and source/drain areas; a gate insulating layer formed on the semiconductor layer in an area corresponding to the channel area; and a gate electrode formed on the gate insulating layer. The source/drain electrodes contact the source/drain areas, respectively; a pixel electrode is formed in the same layer but in a third area; an interlayer insulating layer is formed on a whole surface of the substrate including the formed structures; and a gate line is formed on the interlayer insulating layer and is electrically connected to a gate electrode of the first area through a via contact hole of the interlayer insulating layer. | 2011-12-01 |
20110291123 | METHOD FOR PRODUCING A PLURALITY OF LED ILLUMINATION DEVICES AND A PLURALITY OF LED CHIPSETS FOR ILLUMINATION DEVICES, AND LED ILLUMINTATION DEVICE - A method for producing a plurality of LED illumination devices which each emit light having an average value of a first photometric parameter including producing a plurality of LED chips which emit light of the same color; measuring values of the first photometric parameter of the LED chips; combining the LED chips to form groups of at least two LED chips which have different values of the first photometric parameter such that differences in the average values of all the LED illumination devices are imperceptible to the human eye; and equipping a respective LED illumination device with a group of LED chips. | 2011-12-01 |
20110291124 | Improved Packaging for LED Combinations - In summary, the present invention relates to a device, a system, a method and a computer program enabling a thermally improved packaging of a plurality of light emitting diodes ( | 2011-12-01 |
20110291125 | LIGHTING MODULE - A lighting module may include a lighting band with a band-shaped flexible substrate, wherein at least one semiconductor light source is applied to a top side of the substrate, wherein the lighting module is faced with a protective layer such that at least one emission area of the at least one semiconductor light source is exposed thereby. | 2011-12-01 |
20110291126 | ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE - An active matrix substrate ( | 2011-12-01 |
20110291127 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE - Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer. | 2011-12-01 |
20110291128 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - A light emitter and method for manufacturing a light emitter. The light emitter includes a first electrode, a charge injection transport layer, a light-emitting layer, and a second electrode that are layered in this order. At least the light-emitting layer is defined by bank. The charge injection transport layer includes a recessed portion having an inner bottom surface in contact with a bottom surface of the light-emitting layer and an inner side surface continuous with the inner bottom surface and in contact at least partly with a side surface of the light-emitting layer. The inner side surface has a lower edge continuous with the inner bottom surface, and an upper edge is aligned with a portion of a bottom periphery of the bank, the portion being in contact with the light-emitting layer or in contact with a bottom surface of the bank. | 2011-12-01 |
20110291129 | OPTOELECTRONIC DEVICE - An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and a resistance element having a temperature-dependent electrical resistance, wherein the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence, the resistance element and the first semiconductor light source form a series circuit, and the series circuit and the second semiconductor light source form a parallel circuit. | 2011-12-01 |
20110291130 | PHOTONIC STRUCTURES FOR EFFICIENT LIGHT EXTRACTION AND CONVERSION IN MULTI-COLOR LIGHT EMITTING DIODES - A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern. | 2011-12-01 |
20110291131 | LIGHT EMITTING DEVICE, PLANAR LIGHT SOURCE, AND DISPLAY DEVICE - A mortar-shaped or funnel-shaped light emitting device ( | 2011-12-01 |
20110291132 | LIGHT-EMITING DEVICE WITH IMPROVED COLOR RENDERING INDEX - A light-emitting device (LED) is disclosed. The LED includes a carrier substrate having a blue light emitter thereon. A layer containing a fluorescent material is on the blue light emitter. An encapsulant is disposed around the blue light emitter. Pigments are suspended between an outer surface of the encapsulant and the blue light emitter. | 2011-12-01 |
20110291133 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer. | 2011-12-01 |
20110291134 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING UNIT - Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a support member having a stepped portion on a side surface, a light emitting structure on the support member, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer to generate light, and an electrode supplying a power to the first conductive type semiconductor layer. The support member has a first surface on which the light emitting structure is disposed and a second surface having an area greater than that of the first surface. | 2011-12-01 |
20110291135 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a silicon substrate having a first surface and a second surface opposite to the first surface, wherein the first surface includes a cavity, a light emitting diode chip fixed on a bottom of the cavity, and a glass lens secured to the silicon substrate and covering the light emitting diode chip. | 2011-12-01 |
20110291136 | LIGHT-EMITTING ELEMENT AND FABRICATION METHOD THEREOF - A light-emitting element includes a substrate, a light-emitting module and at least two electrodes. The light-emitting module is formed on the substrate. The at least two electrodes are formed on the light-emitting module. Exterior surfaces of the light-emitting module are separated into a first part and a second part. The first part is defined between the at least two electrodes and the light-emitting module. The second part includes exterior surfaces not contacting the at least two electrodes. The first part is smooth. At least a part of the second part is rough. | 2011-12-01 |
20110291137 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength. | 2011-12-01 |
20110291138 | LIGHT-EMITTING ELEMENT PACKAGE AND FABRICATION METHOD THEREOF - A light-emitting element package includes a package member for encapsulating a light-emitting element. A plurality of photonic crystal patterns is formed on the package member. A distribution density of the photonic crystal patterns corresponds to light distribution of the light-emitting element. Each photonic crystal pattern consists of a plurality of photonic crystals. | 2011-12-01 |
20110291139 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optical device disposed on the first surface; a conducting pad disposed on the first surface; a first alignment mark formed on the first surface; and a light shielding layer disposed on the second surface and having a second alignment mark, wherein the second alignment mark corresponds to the first alignment mark. | 2011-12-01 |
20110291140 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer. | 2011-12-01 |