48th week of 2021 patent applcation highlights part 76 |
Patent application number | Title | Published |
20210376170 | INTEGRATED OPTICAL SENSOR WITH PINNED PHOTODIODES - An integrated optical sensor is formed by a pinned photodiode. A semiconductor substrate includes a first semiconductor region having a first type of conductivity located between a second semiconductor region having a second type of conductivity opposite to the first type one and a third semiconductor region having the second type of conductivity. The third semiconductor region is thicker, less doped and located deeper in the substrate than the second semiconductor region. The third semiconductor region includes both silicon and germanium. In one implementation, the germanium within the third semiconductor region has at least one concentration gradient. In another implementation, the germanium concentration within the third semiconductor region is substantially constant. | 2021-12-02 |
20210376171 | OPTICAL SENSOR AND METHOD FOR FORMING THE SAME - An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region. | 2021-12-02 |
20210376172 | Core-shell Layer for Room Temperature Infrared Sensing - An infrared up-conversion device for converting LWIR radiation to NIR radiation includes a distribution of core-shell nano-sized particles within a transparent binder material. The core-shell particles can be composed of a HgTe core and a CdTe shell. The up-conversion device can be used with a NIR imager to function as an LWIR imager without the need for cryogenic cooling. | 2021-12-02 |
20210376173 | Conductive Interconnect For Connecting Adjacent Solar Cells In A Solar Cell Assembly - A system of interconnected solar cells is described. The system includes a first solar cell. The system includes a second solar cell adjacent to the first solar cell. The system includes a conductive interconnect configured to conduct electricity between a first terminal of the first solar cell and a second terminal of the second solar cell. The conductive interconnect includes a first end aligned on an axis and configured to conduct electricity at a first terminal on the first solar cell. The conductive interconnect includes a second end aligned on the axis and configured to conduct electricity at a second terminal on the second solar cell. The conductive interconnect includes a center portion connecting the first end to the second end and configured to conduct electricity between the first end and the second end. | 2021-12-02 |
20210376174 | SOLAR CELL MODULE AND PHOTOVOLTAIC POWER GENERATION SYSTEM - A solar cell module of an embodiment includes: a first solar panel having a plurality of first sub modules each including a plurality of first solar cells; and a second solar panel layered with the first solar panel, the second solar panel having a plurality of second solar cells. The first solar panel exists on the side where light is incident. The first solar panel and the second solar panel are electrically connected in parallel. The first solar cells included in the first submodules are electrically connected in series. The first submodules are electrically connected in parallel. | 2021-12-02 |
20210376175 | SYSTEMS, CIRCUITS AND METHODS FOR AN INTERCONNECT FABRIC WITH PROGRAMMABLE CIRCUIT ROUTES FOR CONFIGURING SOLAR CELL STRINGS - A solar power system may comprise a back sheet that comprises an interconnect circuit coupling a plurality of cell tiles. A tiled solar cell, comprising a solar cell and encapsulating and glass layers, is inserted into the cell tiles of the back sheet. Each solar cell is individually addressable through the use of the interconnect circuit. Moreover, the interconnect circuit of the back sheet is programmable and allows for dynamic interconnect routing between solar cells. | 2021-12-02 |
20210376176 | PHOTOVOLTAIC MODULE, SOLAR CELL, AND METHOD FOR PRODUCING SOLAR CELL - Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×10 | 2021-12-02 |
20210376177 | Buffer Layers for Photovoltaic Devices with Group V Doping - According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants. | 2021-12-02 |
20210376178 | X-RAY DEVICE - An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers. | 2021-12-02 |
20210376179 | PHOTON DETECTOR ARRAY ASSEMBLY - In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad. | 2021-12-02 |
20210376180 | PHOTODIODE AND/OR PIN DIODE STRUCTURES - The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and/or PIN diode structures and methods of manufacture. The structure includes: at least one fin including substrate material, the at least one fin including sidewalls and a top surface; a trench on opposing sides of the at least one fin; a first semiconductor material lining the sidewalls and the top surface of the at least one fin, and a bottom surface of the trench; a photosensitive semiconductor material on the first semiconductor material and at least partially filling the trench; and a third semiconductor material on the photosensitive semiconductor material. | 2021-12-02 |
20210376181 | A DEVICE FOR OPERATING WITH THZ AND/OR IR AND/OR MW RADIATION - The present invention relates to a device for operating with THz and/or IR and/or MW radiation, comprising:—an antenna having one or more antenna branches (A | 2021-12-02 |
20210376182 | DISPLAY DEVICES WITH IMAGE SENSOR - A display device is provided. The display device includes a display panel that has a display region. The display device also includes at least one image sensor that overlaps with the display region. The at least one image sensor includes a light-sensing element and at least one light-receiving element disposed on the light-sensing element. | 2021-12-02 |
20210376183 | A METHOD FOR IMPROVING THE PERFORMANCE OF A HETEROJUNCTION SOLAR CELL - The present disclosure provides a method for rapidly treating a heterojunction solar cell fabricated using a crystalline silicon wafer doped exclusively with n-type dopants to improve surface passivation and carrier transport properties using the following steps: providing a heterojunction solar cell; the solar cell having an n-type silicon substrate exclusively doped with n-type dopants with a concentration higher than 1×10 | 2021-12-02 |
20210376184 | OPTOELECTRONIC SEMICONDUCTOR DEVICE - A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar. | 2021-12-02 |
20210376185 | METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE COMPRISING A PLURALITY OF DIODES - An optoelectronic device manufacturing method including the steps of: a) forming an active diode stack including first and second of opposite conductivity types; b) forming an integrated control circuit including a plurality of elementary control cells each including at least one MOS transistor; c) after steps a) and b), transferring the integrated control circuit onto the upper surface of the active diode stack; and d) after step c), forming trenches extending vertically through the integrated control circuit and emerging into or onto the first layer and delimiting a plurality of pixels each including a diode and an elementary control cell. | 2021-12-02 |
20210376186 | DIODE STRUCTURE AND METHOD OF FABRICATING THE SAME - A diode structure includes a substrate, a pillar stack disposed on the substrate, and a first barrier layer. The pillar stack includes a first semiconductor layer, a silicon layer, and a second semiconductor layer, in which the first and second semiconductor layers respectively have different dopants such that a conductivity of the first semiconductor layer is different from a conductivity of the second semiconductor layer. The first barrier layer is disposed between the first semiconductor layer and the silicon layer, in which the first barrier layer is configured to prevent the dopants in the first semiconductor layer from diffusing into the silicon layer. | 2021-12-02 |
20210376187 | PRECLEAN AND ENCAPSULTAION OF MICROLED FEATURES - Method for cleaning and encapsulating microLED features are disclosed. Some embodiments provide for a wet clean process and a dry clean process to remove contaminants from the microLED feature. Some embodiments provide for the encapsulation of a clean microLED feature. Some embodiments provide improved crystallinity of the microLED feature and the capping layer. Some embodiments provide improved EQE of microLED devices formed from the disclosed microLED features. | 2021-12-02 |
20210376188 | METHOD FOR TRANSFERRING A LIGHT EMITTING DEVICE FOR DISPLAY - A transferring method for a light emitting device for a display includes manufacturing a wafer having unit pixels, cutting the wafer on a temporary substrate to singularize the unit pixels, measuring electrical or optical characteristics of the singularized unit pixels, and transferring unit pixels selected according to the electrical or optical characteristics to a carrier substrate. The selected unit pixels are transferred to the carrier substrate in a unit of a predetermined area encompassing a plurality of unit pixels. | 2021-12-02 |
20210376189 | MASS TRANSFER DEVICE, MASS TRANSFER METHOD, AND STORAGE MEDIUM - Disclosed are a mass transfer device and a mass transfer method. The mass transfer device includes a laser ( | 2021-12-02 |
20210376190 | OPTO-ELECTRONIC DEVICE AND IMAGE SENSOR INCLUDING THE SAME - Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer. | 2021-12-02 |
20210376191 | LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT - A light emitting element includes an n-side nitride semiconductor layer; an active layer disposed on the n-side nitride semiconductor layer and including a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers, the active layer being configured to emit ultraviolet light; and a p-side nitride semiconductor layer disposed on the active layer. At least one of the plurality of barrier layers including, successively from the n-side nitride semiconductor layer side, a first barrier layer containing Al and Ga, and a second barrier layer disposed in contact with the first barrier layer, containing Al, Ga, and In, and having a smaller band gap energy than the first barrier layer. At least one of the plurality of well layers is disposed in contact with a second barrier layer and has a smaller band gap energy than the second barrier layer. | 2021-12-02 |
20210376192 | PIXEL AND DISPLAY DEVICE INCLUDING THE SAME - A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode. | 2021-12-02 |
20210376193 | LIGHT-EMITTING DEVICE, METHOD OF PREPARING SAME, INK COMPOSITION INCLUDING SAME, AND APPARATUS INCLUDING SAME - Provided are a light-emitting device, a method of preparing the light-emitting device, an ink composition including the light-emitting device, and an apparatus including the light-emitting device. The light-emitting device may include: a semiconductor region including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a first protective layer on at least one portion of a surface of the semiconductor region and including a Group III-V compound; and a second protective layer on the first protective layer and including a metal oxide. | 2021-12-02 |
20210376194 | HIGH-EFFICIENCY RED MICRO-LED WITH LOCALIZED CURRENT APERTURE - A micro-light emitting diode (micro-LED) includes a current aperture to confine the current in a localized region such that the carrier recombination mostly occurs in the localized region to emit photons, thereby reducing the surface recombination and improving the quantum efficiency. The current confinement and localization are achieved using a localized breakthrough of a barrier layer by a localized contact, lightly p-doped active layers to suppress lateral transport of the carriers to the surface region, selective ion implantation, etching, or oxidation of a semiconductor layer, or any combination thereof. | 2021-12-02 |
20210376195 | SPHERICAL FLIP-CHIP MICRO-LED, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL - A spherical flip-chip micro-LED, a method for manufacturing the spherical flip-chip micro-LED, and a display panel are provided. The spherical flip-chip micro-LED includes a light-emitting body, a supporting body, a first electrode, a second electrode, and an insulating protective layer. The supporting body is transparent. The first electrode and the second electrode are electrically coupled with the light-emitting body. The insulating protective layer covers the light-emitting body. The light-emitting body, the supporting body, and the insulating protective layer form a spherical structure. | 2021-12-02 |
20210376196 | DISPLAY DEVICE - A display device includes a substrate, a first electrode and a second electrode which are spaced apart from each other in a second direction, light-emitting elements spaced apart from each other in the first direction, a first contact electrode electrically contacting the light-emitting elements, and a second contact electrode electrically contacting the light-emitting elements. The first contact electrode electrically contacts the first electrode through a first contact portion disposed on the first electrode, the second contact electrode electrically contacts the second electrode through a second contact portion disposed on the second electrode, the first contact portion is disposed on an end portion in the first direction of the first contact electrode, and the second contact portion is disposed on an end portion in the first direction of the second contact electrode. | 2021-12-02 |
20210376197 | LIGHTING APPARATUS HAVING MOUNTING SUBSTRATE FOR LED LIGHTING - Glare and/or multiple shadows are reduced and/or prevented in an SMD-type lighting fixture using high-power CSP devices. A lighting apparatus includes: a substrate having a plurality of conduction parts; and a plurality of surface mount-type LED elements mounted so as to be connected to the respective plurality of conduction parts which the substrate has, the individual elements being separately sealed, wherein the substrate includes a fluorescent substance layer containing a first fluorescent substance, the layer covering at least part of a surface on a side where the plurality of surface mount-type LED elements are mounted, the first fluorescent substance is excited at a wavelength of emitted light from at least one of the plurality of surface mount-type LED elements, and the plurality of surface mount-type LED elements are not integrally sealed. | 2021-12-02 |
20210376198 | WAVELENGTH CONVERSION ELEMENT AND PROJECTION APPARATUS - A wavelength conversion element includes a substrate, an adhesion layer and a wavelength conversion material. The substrate has a bearing surface having an adhesion zone. The adhesion zone has a central portion and two edge portions respectively on two sides of the central portion. The adhesion layer is disposed on the adhesion zone and includes a first adhesive and a second adhesive. The first adhesive is disposed at the edge portions. The second adhesive is disposed at the central portion. Operating temperature of the first adhesive is lower than operating temperature of the second adhesive. Viscosity of the first adhesive is larger than viscosity of the second adhesive. The wavelength conversion material is fixed on the bearing surface by the first adhesive and the second adhesive. A projection apparatus having the wavelength conversion element is provided, and the durability of the wavelength conversion element and the projection apparatus is improved. | 2021-12-02 |
20210376199 | Optoelectronic Component, Method for Producing an Optoelectronic Component and Lighting Device - In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element. | 2021-12-02 |
20210376200 | FLASH LED PACKAGE - A flash LED package includes a substrate; a flash LED device in a first region of an upper surface of the substrate, and including first to fourth LED light sources that emit white light, blue light, green light, and red light, respectively; an optical sensor in a second region of the upper surface of the substrate, and having a light receiving region that detects a correlated color temperature; and a lens cover on the substrate to cover the flash LED device and the optical sensor, and having a lens unit in a region overlapping the first to fourth LED light sources. | 2021-12-02 |
20210376201 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element having a dominant wavelength in a range of 400 nm or more and 500 nm or less, and a wavelength conversion member that is arranged on a light emitting side of the light emitting element and includes a rare earth aluminate fluorescent material having a composition represented by the following formula (I), wherein the light emitting device emits light having a dominant wavelength in a range of 475 nm or more and 500 nm or less, and wherein the light emitting device emits light having an S/P ratio of 6.5 or less derived from the formula (1), which is the ratio of a luminous flux in scotopic vision relative to a luminous flux in photopic vision: | 2021-12-02 |
20210376202 | MICRO LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME, AND MICRO LIGHT EMITTING DIODE MODULE - A micro-LED and a method for manufacturing the same, and a micro-LED module are provided. The method includes the following. Multiple micro-LED units that are spaced on a substrate are provided. A jig is covered on the substrate in such a manner that a light-emitting part of each micro-LED unit is covered between the jig and the substrate. A molten light blocking material is injected into the jig in such a manner that the light blocking material is filled between side surfaces of each micro-LED unit and the jig. The light blocking material is cured to form a light blocking layer on the side surfaces of each micro-LED unit. The jig is removed after the light blocking material is cured. | 2021-12-02 |
20210376203 | SEALED DEVICE WITH LIGHT ENGINE - Disclosed is a device ( | 2021-12-02 |
20210376204 | WAFER-LEVEL SOLID STATE TRANSDUCER PACKAGING TRANSDUCERS INCLUDING SEPARATORS AND ASSOCIATED SYSTEMS AND METHODS - Wafer-level packaging of solid-state transducers (“SSTs”) is disclosed herein. A method in accordance with a particular embodiment includes forming a transducer structure having a first surface and a second surface opposite the first surface, and forming a plurality of separators that extend from at least the first surface of the transducer structure to beyond the second surface. The separators can demarcate lateral dimensions of individual SSTs. The method can further include forming a support substrate on the first surface of the transducer structure, and forming a plurality of discrete optical elements on the second surface of the transducer structure. The separators can form barriers between the discrete optical elements. The method can still further include dicing the SSTs along the separators. Associated SST devices and systems are also disclosed herein. | 2021-12-02 |
20210376205 | Colour micro-LED display apparatus - A colour micro-LED display apparatus comprises an array of reflective optical elements and an array of micro-LED pixels with a uniform emission colour across the array arranged between the array of reflective optical elements and an output substrate. Light from the micro-LEDs is directed into the reflective optical elements and is incident on scattering regions in the apparatus. Colour converted scattered light is transmitted by the output substrate. A thin and efficient display apparatus may be provided with high spatial and angular colour uniformity and long lifetime. | 2021-12-02 |
20210376206 | Component with an Optoelectronic Part - In an embodiment a component includes a carrier, at least one optoelectronic part arranged on the carrier, the optoelectronic part configured to emit electromagnetic radiation, a frame arranged on the carrier and enclosing a part space, wherein the optoelectronic part is arranged in the part space, and wherein the frame comprises a reflector, and a lens arranged on the frame and at least partially covering an opening of the part space, wherein the reflector is configured to direct the electromagnetic radiation onto the lens, wherein the lens is configured to direct the electromagnetic radiation of the optoelectronic part, and wherein the lens comprises at least a partial pyramidal-shaped section on a first side face facing toward the optoelectronic part. | 2021-12-02 |
20210376207 | WHITE-LIGHT-EMITTING LED STRUCTURES - A white-light-emitting inorganic light-emitting-diode (iLED) structure comprises first iLEDs electrically connected in series, each first iLED emitting a different color of light from any other first iLED when electrical power is provided to the first iLEDs, and a second iLED electrically connected to one of the first iLEDs, the second iLED emitting the same color of light as the one of the first iLEDs when electrical power is provided to the first iLEDs. The second iLED can be electrically connected in series or in parallel with the one of the first iLEDs. Such iLED structures can be used at least in displays, lamps, and indicators. | 2021-12-02 |
20210376208 | MANUFACTURING METHOD FOR LED SUBSTRATE AND LED SUBSTRATE - The present disclosure provides a manufacturing method for an LED substrate and the LED substrate, the manufacturing method for the LED substrate includes following steps: S | 2021-12-02 |
20210376209 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF, BACKLIGHT MODULE, DISPLAY PANEL AND DISPLAY DEVICE - Provided are a light emitting device and manufacturing method thereof, a backlight module, a display panel and a display device. The manufacturing method includes: providing a substrate; forming a circuit layer on a side of the substrate; providing at least one switching element and at least one light emitting element; and electrically connecting the switching element and the light emitting element to the circuit layer. The circuit layer includes a first power signal line, a second power signal line, and a pulse width modulation signal line; the switching element includes a control terminal, a first terminal and a second terminal; the light emitting element is electrically connected between the first terminal and the first power signal line, or the light emitting element is electrically connected between the second terminal and the second power signal line. | 2021-12-02 |
20210376210 | PIXEL, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME - A pixel includes a first insulating film disposed on a substrate, a light emitting element disposed on the first insulating film, a second insulating film disposed on the light emitting element to cover at least a portion of the light emitting element, a first contact electrode and a second contact electrode, each of the first and second contact electrodes including at least a portion disposed on the first insulating film and connected to the light emitting element, and an encapsulation layer including a photosensitive material. | 2021-12-02 |
20210376211 | DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE - Discussed is a display apparatus, including at least one horizontal semiconductor light emitting device having a first conductive electrode and a second conductive electrode; first and second wirings spaced apart from each other on a substrate, and electrically connected to the first and second conductive electrodes, respectively; a first bump disposed between the first wiring and the first conductive electrode; and a second bump disposed between the second wiring and the second conductive electrode, wherein at least one of the first and second bumps protrudes toward the other one from an edge of either one of the first and second wirings. | 2021-12-02 |
20210376212 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present disclosure relate to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a semiconductor light emitting chip, and first electrodes electrically connected to the semiconductor light emitting chip, with the first electrodes each having a planar area larger than that of the semiconductor light emitting chip, wherein lower surfaces of the first electrodes are exposed externally, and an insulating material is filled in-between inner lateral surfaces of the first electrodes. | 2021-12-02 |
20210376213 | SURFACE-MOUNTABLE PIXEL PACKAGES AND PIXEL ENGINES - A method of making a surface-mountable pixel engine package comprises providing an array of spaced-apart conductive pillars and an insulating mold compound laterally disposed between the conductive pillars on a substrate together defining a planarized surface. Pixel engines comprising connection posts are printed to the conductive pillars so that each of the connection posts is in electrical contact with one of the conductive pillars. The pixel engines are tested to determine known-good pixel engines. An optically clear mold compound is provided over the planarized surface and tested pixel engines. Optically clear mold compound is adhered to a tape and the substrate is removed. The optically clear mold compound, the insulating mold compound, the conductive pillars, the optically clear mold compound, and the tested pixel engines are singulated to provide pixel packages that comprise the pixel engines and the known-good pixel engines are transferred to a reel or tray. | 2021-12-02 |
20210376214 | FIBER BASED THERMOELECTRIC DEVICE - Methods of making various fibers are provided including co-axial fibers with oppositely doped cladding and core are provide; hollow core doped silicon carbide fibers are provided; and doubly clad PIN junction fibers are provided. Additionally methods are provided for forming direct PN junctions between oppositely doped fibers are provided. Various thermoelectric generators that incorporate the aforementioned fibers are provided. | 2021-12-02 |
20210376215 | THERMOELECTRIC MODULE - A thermoelectric module is provided. The thermoelectric module includes: a first thermoelectric material unit including a first unit thermoelectric material disposed in a first direction; and a second thermoelectric material unit electrically connected to the first thermoelectric material unit and including a second unit thermoelectric material disposed in a second direction that intersects the first direction. | 2021-12-02 |
20210376216 | THERMOELECTRIC MEASUREMENT SYSTEM AND THERMOELECTRIC DEVICE BASED ON LIQUID EUTECTIC GALLIUM-INDIUM ELECTRODE - The present invention relates to a thermoelectric measurement system based on a liquid eutectic gallium-indium electrode, whereby thermoelectric performance can be measured with excellent efficiency and high reproducibility even without construction of expensive equipment, various organic molecules as well as large-area molecular layers can be measured, and various thermoelectric materials, such as inorganic materials and inorganic-organic composite materials, can be measured. In addition, non-toxic liquid metal EGaIn is used as an upper electrode, so the damage to even a substance of measurement in the form of a nano-level thin film can be minimized, and the measurement of thermoelectric performance can be performed on even nano- to micro-level organic thermoelectric elements. Therefore, the thermoelectric measurement system is widely utilized across the thermoelectric element industry. | 2021-12-02 |
20210376217 | THERMOELECTRIC ELEMENTS AND DEVICES WITH ENHANCED MAXIMUM TEMPERATURE DIFFERENCES BASED ON SPATIALLY VARYING DISTRIBUTED TRANSPORT PROPERTIES - Provided herein is a thermoelectric element that includes a cold end, a hot end, and a p-type or n-type material having a length between the hot end and the cold end. The p-type or n-type material has an intrinsic Seebeck coefficient (S), an electrical resistivity (ρ), and a thermal conductivity (λ). Each of two or more of S, ρ, and λ generally increases along the length from the cold end to the hot end. The thermoelectric element may be provided in single-stage thermoelectric devices providing enhanced maximum temperature differences. The single-stage thermoelectric devices maybe combined with one another to provide multi-stage thermoelectric devices with even further enhanced maximum temperature differences. | 2021-12-02 |
20210376218 | PRODUCTION METHOD FOR CHIP MADE OF THERMOELECTRIC CONVERSION MATERIAL AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION MODULE USING CHIP OBTAINED BY SAID PRODUCTION METHOD - Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip ( | 2021-12-02 |
20210376219 | HIGH-RESOLUTION SENSING OF PIEZO-ELECTRIC TRANSDUCERS - In a driver for a piezo-electric transducer, when a converter circuit and a sensing circuit are the same circuit, many limitations exist on the accuracy of the sensing, due to multiple parasitic effects arising from the interconnection of the power devices. These limitations may limit viability of the sensing for many applications, in particular an accurate determination of when the force on the piezo-electric transducer is fully removed. Providing an additional switch in the sensing circuit configured to repeatedly zero the sensed voltage across the piezo-electric transducer each time the sensed voltage reaches a threshold voltage generates a plurality of voltage segments between zero and the threshold voltage. Accordingly, a controller may then be configured to generate a digital reconstruction of the sensed voltage across the piezo-electric transducer by adding the plurality of voltage segments. | 2021-12-02 |
20210376220 | PIEZOELECTRIC ELEMENT FOR SPEAKER AND MANUFACTURING METHOD THEREFOR - Provided are a piezoelectric element for a speaker and a method of manufacturing the same. The piezoelectric element for a speaker includes a plurality of piezoelectric ceramic layers stacked on one another in a thickness direction, and a plurality of electrodes provided to be connected to middle portions of sides of the plurality of piezoelectric ceramic layers along external walls of the plurality of stacked piezoelectric ceramic layers, wherein middle portions of some sides from among a plurality of sides of each of the plurality of piezoelectric ceramic layers are etched, and wherein the plurality of piezoelectric ceramic layers are stacked on one another in the thickness direction not to overlap non-etched sides from among the plurality of sides. | 2021-12-02 |
20210376221 | Electric controlled bi-directional bending actuator with deformability and stiffness tunable capacity - An electric controlled bi-directional bending actuator with deformability and stiffness tunable capacity is disclosed. The electric controlled bi-directional bending actuator with deformability and stiffness tunable capacity comprises three kinds of functional layers that are electro-deformable layers, electro-variable stiffness layers and flexible electrodes. From up to bottom, they are the first flexible electrodes layer, the first electro-deformable layer, the second flexible electrodes layer, the electro-variable stiffness layer, the third flexible electrode layer, the second electro-deformable layer and the fourth flexible electrode layer. The adjacent layers are glued together. The electro-deformable layer is made from dielectric elastomers. The electro-variable stiffness layer is made from electro-rheological materials, including electro-rheological fluids, electro-rheological gels or electro-rheological elastomers. Compared with the present pneumatic actuators with deformability and stiffness tunable capacity, the invention has such merits as simple structure, precise regulation, quick response, convenient control and insensitive to environmental. | 2021-12-02 |
20210376222 | PIEZOLUMINESCENCE STRUCTURE, PIEZOELECTRIC STRUCTURE, MANUFACTURING METHOD THEREOF AND HIGH SENSITIVITY PRESSURE SENSOR USING THE SAME - Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an A | 2021-12-02 |
20210376223 | Method and Apparatus for Poling Polymer Thin Films - A poling apparatus for poling a polymer thin film formed on a workpiece carried by a workpiece carrier. The workpiece has multiple grounding electrodes, grounding pads located at its edges, and a polymer thin film including multiple areas each covering only one grounding electrode. The poling apparatus includes, in a poling chamber, a poling source generating a plasma, a shadow mask below the poling source, and a Z-elevator to raise the workpiece carrier toward the shadow mask and poling source. When the workpiece in the workpiece carrier is raised to contact the underside of the shadow mask, multiple openings of the shadow mask expose only the corresponding multiple thin film areas of the workpiece to the plasma; meanwhile, conductive grounding terminals on the underside of the shadow mask electrically connect the grounding pads of the workpiece with carrier electrodes on the workpiece carrier, to ground the workpiece. | 2021-12-02 |
20210376224 | STACK ASSEMBLY FOR RADIO-FREQUENCY APPLICATIONS - Stack assembly for radio-frequency applications. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die. | 2021-12-02 |
20210376225 | USE OF AN ELECTRIC FIELD FOR DETACHING A PIEZOELECTRIC LAYER FROM A DONOR SUBSTRATE - A method for transferring a piezoelectric layer from a donor substrate onto a support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form an assembly, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at low temperatures. A detachment chamber for carrying out at least a portion of such a method includes one or two chucks comprising first and/or second electrodes for applying an electric field to a piezoelectric layer. | 2021-12-02 |
20210376226 | MRAM CELL, MRAM AND IC WITH MRAM - Magnetic random access memory (MRAM) cells are provided. An MRAM cell includes a plurality of stacked magnetic tunnel junction (MTJ) devices coupled in serial and a transistor. The transistor having a gate coupled to a word line, a first terminal coupled to a bit line through the stacked MTJ devices, and a second terminal coupled to a source line. The stacked MTJ devices are different sizes. | 2021-12-02 |
20210376227 | HIGH ISOLATION CURRENT SENSOR - Methods and apparatus for providing a high isolation current sensor. In embodiments, a current sensor includes a leadframe having a current conductor first portion and a second portion, a magnetic field sensing element positioned in relation to the current conductor for detecting a magnetic generated by current flow through the current conductor, and a die supported by at least a portion of the first and/or second portions of the leadframe, wherein the first portion of the lead frame includes an isolation region aligned with a first edge of the die. In embodiments, a current sensor includes SOI processing and features to enhance active layer isolation. | 2021-12-02 |
20210376228 | Magnetic Tunnel Junction Device and Method - In an embodiment, a device includes: a magnetoresistive random access memory (MRAM) array including MRAM cells arranged in rows and columns, where a first column of the columns includes: first bottom electrodes arranged along the first column; first magnetic tunnel junction (MTJ) stacks over the first bottom electrodes; a first shared electrode over each of the first MTJ stacks; second bottom electrodes arranged along the first column; second MTJ stacks over the second bottom electrodes; a second shared electrode over each of the second MTJ stacks; and a bit line electrically connected to the first shared electrode and the second shared electrode. | 2021-12-02 |
20210376229 | MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC RECORDING ARRAY - A magnetic domain wall movement element according to the present embodiment includes a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer that are laminated in an order from a side close to a substrate. On a cross-section along a lamination direction and a second direction orthogonal to a first direction in which the first ferromagnetic layer extends in a plan view from the lamination direction, a shortest width of the first ferromagnetic layer in the second direction is shorter than a width of the nonmagnetic layer in the second direction. | 2021-12-02 |
20210376230 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC TUNNEL JUNCTIONS - A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction. | 2021-12-02 |
20210376231 | LOW-RESISTANCE CONTACT TO TOP ELECTRODES FOR MEMORY CELLS AND METHODS FOR FORMING THE SAME - A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode. | 2021-12-02 |
20210376232 | MULTILAYER MAGNETIC TUNNEL JUNCTION ETCHING METHOD AND MRAM DEVICE - A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber ( | 2021-12-02 |
20210376233 | SELECTION ELEMENT-INTEGRATED PHASE-CHANGE MEMORY AND METHOD FOR PRODUCING SAME - Provided are a selection element which does not need an intermediate electrode and thus has improved integration, a phase-change memory device having the selection element, and a phase-change memory implemented so that the phase-change memory device has a highly integrated three-dimensional architecture. | 2021-12-02 |
20210376234 | Switch Device and Method for Manufacturing a Switch Device - A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided. | 2021-12-02 |
20210376235 | MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES - A memory device may be provided, including a base insulating layer, a bottom electrode arranged within the base insulating layer, a substantially planar switching layer arranged over the base insulating layer and a substantially planar top electrode arranged over the switching layer in a laterally offset position relative to the bottom electrode. | 2021-12-02 |
20210376236 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode, a second electrode, and a resistive layer provided between the first electrode and the second electrode, containing at least one of antimony (Sb) and bismuth (Bi) as a first element, and tellurium (Te) as a second element, and having a variable resistance value. The resistive layer includes a first layer having a hexagonal crystal structure containing the first element and the second element. The first layer contains a group 14 element as a third element. | 2021-12-02 |
20210376237 | METHOD OF MANUFACTURING PHASE CHANGE MEMORY AND PHASE CHANGE MEMORY - A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer, a lower electrode layer over the conductive layer, an upper electrode layer, a phase change material between the lower and upper electrode layers, and a selector material between the conductive layer and the lower electrode layer; etching the upper electrode layer to form an upper electrode wire; etching the phase change material according to the upper electrode wire to form a phase change material layer and expose a portion of the lower electrode layer, wherein the phase change material layer has an exposed side surface; after etching the phase change material, performing a nitridizing treatment on the side surface of the phase change material layer to form a nitridized phase change material layer covering the same; and etching the lower electrode layer, the selector material and the conductive layer. | 2021-12-02 |
20210376238 | METHOD OF MANUFACTURING PHASE CHANGE MEMORY - A method of manufacturing a phase change memory includes: forming a stacked structure including a conductive layer; a lower electrode layer over the conductive layer; an upper electrode layer over the lower electrode layer; and a phase change material between the lower and upper electrode layers; etching the upper electrode layer according to a first mask to form an upper electrode wire; simultaneously etching the phase change material according to the upper electrode wire and performing a nitridizing treatment in a same plasma etching chamber until a phase change material layer and a nitridized phase change material layer are formed beneath the upper electrode wire and a portion of the lower electrode layer is exposed, wherein the nitridized phase change material layer covers a side surface of the phase change material layer; and removing the portion of the lower electrode layer and the conductive layer therebeneath. | 2021-12-02 |
20210376239 | ORGANIC FIELD-EFFECT TRANSISTOR COMPRISING A DIELECTRIC LAYER EXHIBITING HIGH DIELECTRIC PERMITTIVITY AND BEING STABLE WITH TEMPERATURE - The invention relates to a composition comprising a blend of fluorinated electroactive polymers and having a dielectric permittivity that exhibits greater stability over the operating temperature range with respect to each polymer employed on its own. The invention also relates to formulations and films produced on the basis of said composition. The invention also relates to a field-effect transistor, at least part of the dielectric layer of which is composed of a blend of fluorinated electroactive polymers. | 2021-12-02 |
20210376240 | ORGANIC ELECTROLUMINESCENT COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent device with improved driving voltage and/or power efficiency can be provided by using the organic electroluminescent compound according to the present disclosure. | 2021-12-02 |
20210376241 | AMINE-SUBSTITUTED NAPHTHALENE DERIVATIVES AND ORGANIC LIGHT EMITTING DIODES INCLUDING THE SAME - Disclosed are amine-substituted naphthalene derivatives and organic light emitting diodes including the same. In the organic light emitting diodes, at least one of the amine-substituted naphthalene derivatives is employed in a hole auxiliary layer interposed between a hole transport layer and a light emitting layer to enable efficient hole transport to the light emitting layer, achieving high luminous efficiency and long lifetime. | 2021-12-02 |
20210376242 | QUANTUM DOT COMPOSITION, LIGHT EMITTING ELEMENT, AND METHOD FOR MANUFACTURING THE SAME - A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a head portion bonded to the surface of the quantum dot, a connecting portion connected to the head portion and including a metal, and a tail portion coordinated to the metal of the connecting portion. The quantum dot composition according to the present embodiments is used to form an emission layer of a light emitting element, and may thus increase service life and luminous efficiency of the light emitting element including the emission layer formed using the quantum dot composition. | 2021-12-02 |
20210376243 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern. | 2021-12-02 |
20210376244 | HOLE-TRANSPORTING INK COMPOSITION, LIGHT-EMITTING DEVICE, AND METHOD OF PREPARING THE LIGHT-EMITTING DEVICE - According to one aspect of the invention, a hole-transporting ink composition for a light emitting device, the hole-transporting ink composition includes an adhesion-promoting compound represented by Formula 1 and a hole-transporting compound: | 2021-12-02 |
20210376245 | COMPOSITION FOR ORGANIC OPTOELECTRONIC DEVICE AND ORGANIC OPTOELECTRONIC DEVICE AND DISPLAY DEVICE - A composition for an organic optoelectronic device, an organic optoelectronic device, and a display device, the composition including a first compound represented by Chemical Formula I, a second compound represented by Chemical Formula II, and a third compound represented by Chemical Formula III, | 2021-12-02 |
20210376246 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device that includes a substrate; and an organic light emitting diode positioned on the substrate and including a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first host of an anthracene derivative and a first dopant of a boron derivative and positioned between the first and second electrodes, wherein an anthracene core of the first host is deuterated. | 2021-12-02 |
20210376247 | ORGANIC ELECTROLUMINESCENT DEVICE USING ARYL AMINE DERIVATIVE CONTAINING HETEROCYCLE - A compound of formula (7) is provided | 2021-12-02 |
20210376248 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an emission region between the first electrode and the second electrode and including a first emission layer and a second emission layer; and a hole blocking layer between the first emission layer and the first electrode, or between the second emission layer and the second electrode, wherein the second emission layer may be between the first emission layer and the hole blocking layer, the first emission layer may include a first host and a first light-emitting material, the second emission layer may include a second host and a second light-emitting material, and the first light-emitting material and the second light-emitting material may respectively be included in the first emission layer and the second emission layer at an identical ratio. | 2021-12-02 |
20210376249 | ORGANIC ELECTROLUMINESCENCE DEVICE AND POLYCYCLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device of one or more embodiments includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer and a second electrode disposed on the electron transport region, wherein the emission layer includes a polycyclic compound represented by Formula 1, thereby showing high emission efficiency: | 2021-12-02 |
20210376250 | ORGANIC ELECTROLUMINESCENCE DEVICE AND POLYCYCLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device of one or more embodiments includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer and a second electrode disposed on the electron transport region, wherein the emission layer includes a polycyclic compound represented by Formula 1, thereby showing high emission efficiency: | 2021-12-02 |
20210376251 | ELECTROLUMINSCENT MATERIAL CONTAINING CARBONYL GROUP, AND APPLICATION THEREOF TO OLED - The disclosure belongs to the technical field of organic photoelectric materials, and discloses carbonyl containing organic electroluminescent materials and use thereof in OLED. The carbonyl containing organic electroluminescent materials have a structure of formula I, wherein R | 2021-12-02 |
20210376252 | ORGANIC LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - An organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes a host and a dopant, the host includes a first host compound, a second host compound, and a third host compound, and the first host compound satisfies Conditions 1-1 and 1-2: | 2021-12-02 |
20210376253 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organic light-emitting device includes a heterocyclic compound represented by Formula 1, in which at least one of X | 2021-12-02 |
20210376254 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device that includes a substrate; and an organic light emitting diode positioned on the substrate and including a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first host of an anthracene derivative and a first dopant of a boron derivative and positioned between the first and second electrodes, wherein an anthracene core of the first host is deuterated. | 2021-12-02 |
20210376255 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device that includes a substrate; and an organic light emitting diode positioned on the substrate and including a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first host of an anthracene derivative and a first dopant of a boron derivative and positioned between the first and second electrodes; and an electron blocking layer including an electron blocking material of an amine derivative and positioned between the first electrode and the first emitting material layer, wherein an anthracene core of the first host is deuterated. | 2021-12-02 |
20210376256 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Novel compounds that contain azadibenzofuran, azadibenzothiophene, and azadibenzoselenophene with fused rings that can be used as a host material in phosphorescent OLEDs is disclosed. | 2021-12-02 |
20210376257 | COMPOUND AND ORGANIC LIGHT EMITTING DIODE COMPRISING SAME - Provided is a compound of Chemical Formula 1: | 2021-12-02 |
20210376258 | Organic Light Emitting Device - The present Invention relates to an organic light emitting device comprising: (i) an anode; (ii) a cathode; (iii) at least one light emitting layer arranged between the anode and the cathode; (iv) optionally a first hole injection layer comprising a first hole injection compound, the first hole injection layer being arranged between the anode and the light emitting layer and the hole injection layer being adjacent to the anode; (v) a first hole transport layer comprising a first hole transport matrix compound wherein the first hole transport layer is arranged a) between the first hole injection layer and the light emitting layer and adjacent to the first hole injection layer; or b) between the anode and the light emitting layer and adjacent to the anode; (vi) a second hole injection layer arranged between the first hole transport layer and the light emitting layer, wherein the second hole injection layer is adjacent to the first hole transport layer and wherein the second hole injection layer comprises a second hole injection compound; wherein the second hole injection compound is a halo-genated fullerene, a partially or fully halogenated metal complex or a mixture thereof. | 2021-12-02 |
20210376259 | Electron Transport Layer Comprising a Matrix Compound Mixture for an Organic Light-Emitting Diode (OLED) - The present invention is directed to an organic light emitting diode ( | 2021-12-02 |
20210376260 | EFFICIENT AND STABLE NEAR-INFRARED OLED EMPLOYING METAL COMPLEX AGGREGATES AS HOST MATERIALS - A near-infrared organic light emitting device comprises a first electrode; a hole transporting layer in contact with the first electrode; a second electrode; an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer, the emissive layer comprising a near-infrared emitter and an emissive host. The emissive host transfers energy to the near-infrared emitter. | 2021-12-02 |
20210376261 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Provided are transition metal compounds having 1,2,3-triazine. Also provided are formulations comprising these transition metal compounds having 1,2,3-triazine. Further provided are OLEDs and related consumer products that utilize these transition metal compounds having 1,2,3-triazine. | 2021-12-02 |
20210376262 | HETEROCYCLIC COMPOUND, LIGHT-EMITTING DEVICE INCLUDING HETEROCYCLIC COMPOUND, AND ELECTRONIC APPARATUS INCLUDING LIGHT-EMITTING DEVICE - A heterocyclic compound represented by Formula 1: | 2021-12-02 |
20210376263 | Flexible Substrate, Manufacturing Method for Flexible Substrate and Display Device - The present disclosure provides a flexible substrate, the flexible substrate is divided into a display region, a binding region on a side of the display region, a to-be-bent region between the display region and the binding region, two transition regions between the to-be-bent region and the display region and between the to-be-bent region and the binding region respectively; the transition regions comprise a plurality of transition sub-regions arranged in a first direction, the first direction is a direction from the display region to the binding region; the flexible substrate comprises a flexible base and a back film disposed on the flexible base, a portion of the back film is located in the transition regions; in any one of the transition regions, the amount of distribution per unit area of the back film in each of the transition sub-regions gradually decreases in a direction gradually approaching the to-be-bent region. | 2021-12-02 |
20210376264 | PACKAGING STRUCTURE OF ELECTROLUMINESCENT ELEMENT, METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - A flexible display panel with an electroluminescent element, a display device, and a manufacturing method for the packaging structure of an electroluminescent element are provided. The flexible display panel comprises: a first flexible substrate, a first metal mesh on the first flexible substrate, a second flexible substrate on the first metal mesh. The bendability and the flexibility of the proposed flexible display panel are significantly enhanced, which helps to improve the flexibility and the bendability of a display device to which the flexible display panel is applied. | 2021-12-02 |
20210376265 | FLEXIBLE SUBSTRATE AND DISPLAY PANEL - The present invention provides a flexible substrate and a display panel. The flexible substrate comprises a substrate and a plurality of traces. The traces are disposed on the substrate. The substrate is further provided with a plurality of first via holes, and the first via holes are disposed along an extending direction of the traces. | 2021-12-02 |
20210376266 | STRETCH DISPLAY DEVICE AND PREPARATION METHOD - The present disclosure discloses a stretch display device and a preparation method. The method includes providing a substrate on which a flexible substrate is disposed, and a film layer constituting a thin film transistor disposed on a side of the flexible substrate away from the substrate, the film layer being away from the flexible substrate. One side defines a plurality of pixel regions; a hollow portion is formed between adjacent two of the pixel regions, the hollow portion penetrates through the film layer and the flexible substrate; and thermal separation is provided in the hollow portion via a gel; a light-emitting element is disposed in the pixel region, and an encapsulating film layer is disposed on a side of the light-emitting element and the thermal separation gel away from the flexible substrate; heating the thermal separation gel, and the flexible liner. The bottom and the substrate are peeled off. Therefore, when the substrate is peeled off by this method, the problem of breakage of the flexible substrate and the film layer constituting the thin film transistor can be alleviated, and the production yield of the stretch display device can be remarkably improved. | 2021-12-02 |
20210376267 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device are provided. The display panel includes a stretchable display area; and the stretchable display area includes a plurality of island-shaped structures and a plurality of stretchable bridges. A stretchable bridge of the plurality of stretchable bridges is configured to connect adjacent island-shaped structures of the plurality of island-shaped structures; at least one pixel is disposed on an island-shaped structure of the plurality of island-shaped structures; the stretchable display area includes a first stretchable display area and a second stretchable display area adjacent to the first stretchable display area; the first stretchable display area is disposed corresponding to an under-screen camera; and a stretchable degree of the first stretchable display area is greater than a stretchable degree of the second stretchable display area. | 2021-12-02 |
20210376268 | FLEXIBLE DISPLAY DEVICE AND ELECTRONIC DEVICE - A flexible display device and an electronic device are provided. The flexible display device includes: a flexible display panel; a plurality of functional members on a side of the flexible display panel, including a first functional member, a second functional member, and a third functional member; a back film on the other side of the flexible display panel; a supporting member on a side of the back film away from the flexible display panel; and a plurality of adhesive layers, including a first adhesive layer, a second adhesive layer, a third adhesive layer, a fourth adhesive, and a fifth adhesive layer. The third functional member includes a touch module including a touch substrate, a sensor layer, and an adhesive material layer between the sensor layer and the touch substrate, the modulus of the adhesive material layer is not less than the modulus of each of five adhesive layers. | 2021-12-02 |
20210376269 | DISPLAY DEVICE - Provided is a display device capable of displaying a high-quality image even under high temperature conditions, the display device including a flexible substrate, a pixel circuit layer arranged on the flexible substrate, and including a thin-film transistor and a through hole extending to the flexible substrate, a first organic layer arranged on the pixel circuit layer and in contact with the flexible substrate through the through hole, an inorganic layer arranged on the first organic layer to cover an upper surface of the first organic layer, a pixel electrode arranged on the inorganic layer, and an encapsulation layer arranged on the pixel electrode, and including a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer. | 2021-12-02 |