49th week of 2012 patent applcation highlights part 48 |
Patent application number | Title | Published |
20120309059 | Polypeptides Having Endoglucanase Activity And Polynucleotides Encoding Same - The present invention relates to isolated polypeptides having endoglucanase activity and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods for producing and using the polypeptides. | 2012-12-06 |
20120309060 | Processing Biomass - Biomass (e.g., plant biomass, animal biomass, and municipal waste biomass) is processed to produce useful products, such as fuels. For example, systems are described that can use feedstock materials, such as cellulosic and/or lignocellulosic materials, to produce ethanol and/or butanol, e.g., by fermentation. | 2012-12-06 |
20120309061 | PROCESS OF PRODUCING ARGININE EMPLOYING CORYNEBACTERIUM GLUTAMICUM ATCC 21831 OR CORYNEBACTERIUM GLUTAMICUM ATCC 21493 IN AN AFERMANTATION MEDIUM COMPRISING CASSAVA BAGASSE OR JACKFRUIT SEED AS A CARBON SOURCE - Disclosed are processes for producing Arginine by fermentation in which sugars obtained by enzymatic starch hydrolysis from inexpensive starch containing agro-wastes, such as Cassava bagasse and Jackfruit seed powder, are fermented in the presence of microorganisms to produce a fermentated liquor containing Arginine, and recovering Arginine from the liquor. The process can economically be scaled up for the production of Arginine from unrefined sugar sources as it produced Arginine in higher yields, when compared to more expensive synthetic carbon sources, like dextrose or sucrose. | 2012-12-06 |
20120309062 | MICROORGANISMS FOR THE PRODUCTION OF ADIPIC ACID AND OTHER COMPOUNDS - The invention provides a non-naturally occurring microbial organism having an adipate, 6-aminocaproic acid or caprolactam pathway. The microbial organism contains at least one exogenous nucleic acid encoding an enzyme in the respective adipate, 6-aminocaproic acid or caprolactam pathway. The invention additionally provides a method for producing adipate, 6-aminocaproic acid or caprolactam. The method can include culturing an adipate, 6-aminocaproic acid or caprolactam producing microbial organism, where the microbial organism expresses at least one exogenous nucleic acid encoding an adipate, 6-aminocaproic acid or caprolactam pathway enzyme in a sufficient amount to produce the respective product, under conditions and for a sufficient period of time to produce adipate, 6-aminocaproic acid or caprolactam. | 2012-12-06 |
20120309063 | DETERGENT COMPOSITIONS CONTAINING GEOBACILLUS STEAROTHERMOPHILUS LIPASE AND METHODS OF USE THEREOF - The present compositions and methods relate to a lipase cloned from | 2012-12-06 |
20120309064 | MUTANT DELTA-5 DESATURASES MUTATED IN THE HEME-BINDING MOTIF (HPGG) AND THEIR USE IN MAKING POLYUNSATURATED FATTY ACIDS - The present invention relates to mutant Δ5 desaturases, which have the ability to convert dihomo-γ-linolenic acid [DGLA; 20:3 ω-6] to arachidonic acid [ARA; 20:4 ω-6] and/or eicosatetraenoic acid [ETA; 20:4 ω-3] to eicosapentaenoic acid [EPA; 20:5 ω-3] and which possess at least one mutation within the HPGG motif of the cytochome b | 2012-12-06 |
20120309065 | THERMOPHILIC THERMOANAEROBACTER ITALICUS SUBSP. MARATO HAVING HIGH ALCOHOL PRODUCTIVITY - Strict anaerobic thermophilic bacterium belonging to the group of | 2012-12-06 |
20120309066 | Carbon Capture in Fermentation - The invention relates to processes for converting CO by microbial fermentation to one or more products including alcohols and/or acids and optionally capturing CO | 2012-12-06 |
20120309067 | Protease Variants - The present invention relates to proteases having at least 75% identity to a protease derived from | 2012-12-06 |
20120309068 | Method for Employing Ear Corn in the Manufacture of Ethanol - Ear corn is picked from corn fields by ear corn harvesters and transported to a central shelling station associated with an ethanol manufacturing facility. Shelled corn from the central shelling station is processed into ethanol at the ethanol manufacturing facility, and corn cobs from the central shelling station are burned to provide process heat for the ethanol manufacturing process. Energy is conserved and costs are reduced during the picking and shelling of the ear corn and by the burning of cobs for process heat. | 2012-12-06 |
20120309069 | Yeast for Fermentation - The invention relates to an isolated | 2012-12-06 |
20120309070 | GENERATION OF HYDROGEN FROM HYDROCARBON BEARING MATERIALS - Disclosed are strategies for the economical microbial generation of hydrogen, useful as an alternative energy source, from hydrocarbon-rich deposits such as coal, oil and/or gas formations, oil shale, bitumen, tar sands, carbonaceous shale, peat deposits and sediments rich in organic matter through the management of the metabolism of microbial consortia. | 2012-12-06 |
20120309071 | Microbial production of nitrous oxide coupled with chemical reaction of gaseous nitrous oxide including phosphorus recovery and nitrite reduction to nitrous oxide - A method to produce N | 2012-12-06 |
20120309072 | METHOD FOR PURIFYING PROTEIN AND GLUCOSE DEHYDROGENASE - The present invention relates to a method for purifying target protein which contains electron transfer protein, from a protein solution containing the target protein, by means of liquid chromatography. The liquid chromatography is performed as follows: First, the protein solution is introduced into a column which is filled with a packing agent, thereby causing the packing agent to bond to the target protein. Then, impurities are removed, and then the target protein is eluted from the packing agent in an eluent which contains a hydroxy-cholate. An example of the target protein is glucose dehydrogenase which contains a protein having glucose dehydrogenation activity. The liquid chromatography is performed as a combination of hydrophobic chromatography and anion exchange chromatography. | 2012-12-06 |
20120309073 | RNAI IN BUDDING YEAST - The invention provides budding yeast that have a functional RNAi pathway. The invention provides RNAi pathway polypeptides derived from budding yeast that have an endogenous RNAi pathway. In some embodiments the invention provides functional budding yeast Dicer polypeptides and variants thereof. In some embodiments the invention provides functional budding yeast Argonaute polypeptides and variants thereof. Also provided are isolated nucleic acids encoding the polypeptides of the invention, vectors comprising such nucleic acids, and methods of making the polypeptides and nucleic acids. The invention further provides genetically engineered cells that comprise a functional RNAi pathway polypeptide derived from budding yeast. In some embodiments such cells lack a functional endogenous RNAi pathway and are genetically engineered to have a functional RNAi pathway by introducing nucleic acid(s) encoding one or more functional RNAi pathway polypeptides derived from budding yeast. The invention provides methods of using RNAi in budding yeast and/or in cells of other types, wherein the cells have been genetically engineered to express one or more RNAi pathway polypeptides of the invention. Also provided are methods of producing siRNA, either in vitro or in vivo, using a Dicer polypeptide derived from budding yeast. | 2012-12-06 |
20120309074 | NOVEL XYLANASE PRODUCED FROM CELLULOSIMICROBIUM FUNKEI HY-13 - There are provided a novel xylanase and a use of the same. In detail, there are provided a xylanase separated from a | 2012-12-06 |
20120309075 | Novel Bacteria and Methods of Use thereof - A biologically pure isolate of a selected bacterium derived from | 2012-12-06 |
20120309076 | Method of Propagating and Delivering Yeast - A modular multi bag propagation unit to facilitate easy handling of the process elements and efficient use of equipment, services and resources for small-scale yeast production is disclosed. The equipment and method comprises the steps of producing and inoculating a bag, propagating yeast within the bag, and concentrating the yeast in a section of the bag that is the removed from the remainder of the bag whilst not exposing any portion of the yeast therein to an external environment. Consequently the yeast may be propagated in the very bag in which it is prepared for transportation and transported or shipped to the purchaser. In order to remove only the bag containing the most concentrated slurry of yeast, a smaller bag is heat-sealed off of the larger bag, thereby creating a separate bag for the living sediment but that is still the bag in which the sediment was propagated. In a preferred embodiment the method is specific to the alcoholic beverage industry, but the method is also applicable to other industries that grow and transport yeast, bacteria, molds and other microorganisms. | 2012-12-06 |
20120309077 | NOVEL PROCESS OF DYEING AND PROCESSING A NATURAL TEXTILE PRODUCT USING NATURAL DYES ALONGSIDE NEEM AND TULSI - A process of preparing garments and natural textile products using natural fiber, yarns and fabric is provided. The process involves treating the natural textile products with natural dyes converted into micro-sized and nano-sized particles. The textile product is also treated with bio-enzymes and natural ingredients at all stages. A process of preparing garments using Neem ( | 2012-12-06 |
20120309078 | METHODS AND DEVICES FOR PRESERVING TISSUES - Methods and apparatus for preserving detached tissues, especially digits and limbs, which are detached as a result of traumatic amputation. By using the methods and apparatus, detached tissues can be preserved for greater lengths of time and are ultimately in a better condition for replantation surgery. | 2012-12-06 |
20120309079 | DETECTION OF EARLY STAGES AND LATE STAGES HPV INFECTION - Embodiments of the invention provide methods, monoclonal antibodies, polyclonal antibodies, assays, and kits for detecting HPV infection and HPV related cancer diagnosis, including infection by various HPV genotypes, early and/or late stage HPV-associated or HPV-specific cancers. Various specific or pan monoclonal antibodies recognizing specific epitope for specific HPV protein or HPV type, or common epitope for various HPV proteins or HPV types are obtained. The invention also provides one or more solid surface to coat the testing cell lysate. Also, the anti-HPV antibody can be coated on the solid surface of the invention to capture HPV proteins and detect HPV infection. | 2012-12-06 |
20120309080 | Surface Enhanced Raman Spectroscopy Nanodome Biosensors and Methods of Manufacturing the Same - Tubing such as clear plastic disposable tubing or glass tubing includes a photonic sensor formed in or placed within the tubing. The photonic sensors can take the form of photonic crystal sensors, distributed feedback laser sensors, and surface enhanced Raman spectroscopy (SERS) sensors, including photonic crystal enhanced SERS sensors. Detection arrangements for the sensors are described. The invention has many applications including tubing used in hospital care (e.g., urinary catheters, intravenous fluid delivery tubing, tubing used in dialysis, e.g. heparin lines or blood tubing sets), food manufacturing, pharmaceutical manufacturing, water quality monitoring, and environmental monitoring. | 2012-12-06 |
20120309081 | SYSTEM AND PLANT FOR CULTIVATION OF AQUATIC ORGANISMS - Provided are a cultivating system for cultivating aquatic organisms including a load-bearing structure having a top portion with at least two top rims transverse to each other and defining a top portion, a bottom portion, and flexible tank adapted for receiving therein a growing medium and for cultivating therein aquatic organisms. Further, the tank can include at least two sidewalls extending such that at least in one cross-section taken along a plane perpendicular to said top portion, at least two of the sidewalls form a general V-shape converging towards the bottom portion. The system can also include a gas emitting arrangement linkable to a source of pressurized gas and comprising gas emitting nozzles disposed within the flexible tank at the bottom portion. | 2012-12-06 |
20120309082 | MICRO-FLUID SUPPLYING DEVICE HAVING GAS BUBBLE TRAPPING FUNCTION - A micro-fluid supplying device having a gas bubble trapping function. The micro-fluid supplying device includes: a fluid supplier including a fluid having a biomaterial; a trap chamber in which a gas bubble is removed from the fluid supplied from the fluid supplier; and a fluid discharger which externally discharges a material supplied from the trap chamber. Material properties of a side wall and a bottom of an inside of the trap chamber are different from each other. The side wall has a better property of wetting with respect to the fluid supplied from the fluid supplier than the bottom. | 2012-12-06 |
20120309083 | METHODS AND APPARATUSES FOR CONVECTIVE POLYMERASE CHAIN REACTION (PCR) - The present invention provides a method and apparatus for amplifying a nucleic acid sequence by polymerase chain reaction (PCR). The method comprises placing a PCR sample in a container which is heated by only a single heat source that provides a high temperature for denaturation in the bottom of the PCR sample, while annealing and extension automatically occur in different regions of the PCR sample due to the convection induced by a temperature gradient descending from the bottom of the PCR sample to the surface of the PCR sample. | 2012-12-06 |
20120309084 | MICROCHIP FOR NUCLEIC ACID AMPLIFICATION REACTION AND A METHOD OF MANUFACTURING THE SAME - To provide a microchip for a nucleic acid amplification reaction which allows high-precision analysis by a simple method. | 2012-12-06 |
20120309085 | Variant Forms of Urate Oxidase and Use Thereof - Genetically modified proteins with uricolytic activity are described. Proteins comprising truncated urate oxidases and methods for producing them, including PEGylated proteins comprising truncated urate oxidase are described. | 2012-12-06 |
20120309086 | METHODS AND USE OF INDUCING APOPTOSIS IN CANCER CELLS - The present disclosure relates to a method of inducing apoptosis in a cancer cell by delivery of exogenous Coenzyme Q10 or its metabolites thereof in a pharmaceutically acceptable carrier to effectuate cell contact of endogenous Coenzyme Q10 or its metabolites thereof in addition to but not limited to mevalonic acid and oleic acid to form an intracellular complex. The present disclosure also provides a method of modulating the p53 pathway and Bcl-2 protein family in a manner that restores the apoptotic potential to a cancer cell by delivery of Coenzyme Q10 in a pharmaceutically acceptable carrier. The present disclosure further provides a method to specifically normalize the ratio of pro-apoptotic and anti-apoptotic members of the Bcl-2 gene family in a proportion to re-program a cancer cell to undergo apoptosis. | 2012-12-06 |
20120309087 | CANCER THERAPY - The present invention relates to an improved assay for identifying compounds that may be of use in conjunction with cancer chemotherapeutic agents and anti-proliferative agents, to improve efficacy of such agents and/or render effective compounds with relatively little therapeutic activity. There is also provided a class of compounds identified by said assay which may be used in a combination therapy, with current and novel agents, to treat cancers and other diseases associated with abnormal host cell proliferation, such as psoriasis. | 2012-12-06 |
20120309088 | METHODS AND COMPOSITIONS FOR STEM CELL SELF-RENEWAL - The present invention relates to methods for expanding a stem cell population. More particularly, the invention relates, inter alia, to methods and compositions for expanding a stem cell population, particularly a hematopoietic stem cell population. | 2012-12-06 |
20120309089 | SUPPORTS FOR CELL CULTURE AND CELL SHEET DETACHMENT AND METHODS FOR CELL SHEET DETACHMENT - The invention creates a support for cell culture and cell sheet detachment which has a substrate, whose surface is coated with a conjugate having a disulfide bond-containing amino acid as a spacer and a biopolymer enhancing cell attachment, migration or differentation. Unexpectedly, after being seeded on the support, the cells grow to form one or more layers of cell sheets and the cell sheets can be easily detached from the support by adding a reductant to cleave the disulfide bond. Accordingly, the invention provides a simple and non-toxic method for detachment of cell sheets. | 2012-12-06 |
20120309090 | SELF CONTAINED SOLID PHASE PHOTOBIOREACTOR - A compressible bioreactor for cultivating photosynthetic microorganisms, the bioreactor comprising a feeder trough, a collection trough, a growth fabric, and a barrier layer, where the bioreactor has a compressed mode and an extended mode, the growth fabric is coupled to the feeder trough and the collection trough, the growth fabric is substantially extended in the extended mode of the bioreactor, the growth fabric is substantially compressed in the compressed mode of the bioreactor and the barrier layer is coupled to the feeder base and the collection base that encases the growth fabric in a substantially airtight environment | 2012-12-06 |
20120309091 | Methods And Compositions For Gene Inactivation - Disclosed herein are methods and compositions for inactivating CCR-5 genes, using zinc finger nucleases (ZFNs) comprising a zinc finger protein and a cleavage domain or cleavage half-domain. Polynucleotides encoding ZFNs, vectors comprising polynucleotides encoding ZFNs, such as adenovirus (Ad) vectors, and cells comprising polynucleotides encoding ZFNs and/or cells comprising ZFNs are also provided. | 2012-12-06 |
20120309092 | Angiogenin Expression in Plants - The present invention relates to plant-produced angiogenins, to related plant cells, plant calli, plants, seeds and other plant parts and products derived therefrom and to uses of plant-produced angiogenins. The present invention also relates to expression of angiogenin genes in plants and to related nucleic acids, constructs and methods. | 2012-12-06 |
20120309093 | METHOD FOR PREPARING XYLOSE-UTILIZING STRAIN - A method for preparing a xylose-utilizing strain of | 2012-12-06 |
20120309094 | METHOD FOR SCHEDULING SAMPLES IN A COMBINATIONAL CLINICAL ANALYZER - A method for scheduling the order of analysis of multiple samples in a combinational clinical analyzer performing a plurality of different analytical tests, includes the steps of: loading multiple samples in random order into a combinational clinical analyzer; defining the test requirements of the multiple samples; transferring said test requirements to a flexible scheduling algorithm; and generating a schedule specifying the start times of each required test for each of said multiple samples that minimizes or maximizes a predefined objective function. In a preferred embodiment, the objective function is the makespan or weighted makespan. | 2012-12-06 |
20120309095 | POLYANTHRYLENE MATERIALS AND METHODS FOR THEIR PREPARATION AND USE - Compositions containing polyanthrylene and methods of making these compositions are disclosed herein. The polyanthrylene composition can, for example, be used for detection of iron in a sample. | 2012-12-06 |
20120309096 | DETECTING SUCCINYLACETONE - This invention relates, inter alia, to detecting and/or measuring succinylacetone and one or more additional biological analytes using mass spectrometry. | 2012-12-06 |
20120309097 | KIT FOR DETECTING FUNCTIONAL CARBOXYL GROUPINGS - A subject of the invention is a kit for the identification, characterization and quantification by a single detection of the carboxylic, thiol and amine functional groups contained in a sample. | 2012-12-06 |
20120309098 | METHOD FOR PREDICTING THE AMOUNTS OF BIOGENIC GAS GENERATED BY BIOLOGICAL CONVERSION OF ORGANIC MATTER - Method for predicting amounts of biogenic gas generated by biological conversion of organic matter deposited in sediments on the geological time scale. | 2012-12-06 |
20120309099 | AUTOMATIC ANALYZING DEVICE - Provided is an automatic analyzing device including a sample container | 2012-12-06 |
20120309100 | Sample preparation for isotopic analysis without an oxidizer - A sample preparation chamber for gas analysis that includes a heating element within is provided. The heating element is maintained at an elevated temperature, such that organic compounds that may be present in an input gas sample are removed via oxidation and/or thermal decomposition to provide a treated gas sample that is substantially free of organic contaminants. The treated gas sample may then be analyzed in a gas analysis instrument (e.g., an optical spectroscopic instrument, a mass spectrometer, etc.) to provide results that are free from interference due to organic contaminants. Preferably, the heating element is configured as a Ni—Cr wire. An important feature of this approach is that the heating element (and the rest of the sample preparation chamber) are not altered in operation to remove the organic compounds. | 2012-12-06 |
20120309101 | IN-SITU MEASUREMENTS OF SPATIALLY RESOLVED SPECTROSCOPIC DATA WITHIN A REACTOR CHAMBER OF A REACTOR - The invention is directed to a reactor having a reactor chamber and a sensor situated inside the reactor chamber, characterized in that the sensor is a sensor for collecting spectroscopic information. Further, the invention is directed to a method for analyzing a reactor state including the steps of providing said reactor; collecting spectroscopic information from a sample inside the reactor chamber; and analyzing said collected spectroscopic information. | 2012-12-06 |
20120309102 | Method for Determining the Antioxidant Power of Biological Vegetal Fluids - A method is described for determining the antioxidant power of biological fluids such as saliva, serum, plasma, urine, sweat, tears and vegetal fluids, such as fruit, vegetables, beverages derived therefrom. Said method proved to be particularly suitable when evaluating the antioxidant power of saliva, which presents particular complexities from the analytical viewpoint. | 2012-12-06 |
20120309103 | METHOD FOR MEASURING LUMINESCENCE AT A LUMINESCENCE DETECTION WORKSTATION - A luminescence detecting apparatus and method for analyzing luminescent samples is disclosed. Luminescent samples are placed in a plurality of sample wells in a tray, and the tray is placed in a visible-light impervious chamber containing a charge coupled device camera. The samples may be injected in the wells, and the samples may be injected with buffers and reagents, by an injector. In the chamber, light from the luminescent samples pass through a collimator, a Fresnel field lens, a filter, and a camera lens, whereupon a focused image is created by the optics on the charge-coupled device (CCD) camera. The use of a Fresnel field lens, in combination with a collimator and filter, reduces crosstalk between samples below the level attainable by the prior art. Preferred embodiments of the luminescence detecting apparatus and method disclosed include central processing control of all operations, multiple wavelength filter wheel, and robot handling of samples and reagents. Preferred embodiments of processing software integrated with the invention include elements for mechanical alignment, outlier shaving, edge detection and masking, manipulation of multiple integration times to expand the dynamic range, crosstalk correction, dark subtraction interpolation and drift correction, multi-component analysis applications specifically tailored for luminescence, and uniformity correction. | 2012-12-06 |
20120309104 | Sample Processing Device, Sample Processing Method, and Reaction Container Used in These Device and Method - This invention concerns a sample processing device capable of efficiently recovering biological molecules, such as nucleic acids or proteins. The sample processing device is capable of placing a reaction container having a plurality of reaction sites, and it comprises a nozzle mechanism with a nozzle capable of attaching and removing a dispenser tip for dispensing a solution into the reaction sites of the reaction container and a magnetic tip for generating a magnetic field that allows magnetic beads to migrate to a space among the plurality of reaction sites in the reaction container, and a drive control unit controlling the nozzle mechanism. | 2012-12-06 |
20120309105 | Radioiodine-Labeled Thyroxine Dosimetry, and Methods of Use Thereof - Provided are methods of detecting the presence or amount of organified radioiodine, such as radioactive thyroxine, in a sample using mass spectrometry. For example, one aspect of the invention relates to a rapid and sensitive liquid chromatography/tandem mass spectrometry (LC/MS/MS) method for the simultaneous measurement of radioactive thyroxine and non-radioactive thyroxine in human serum/plasma. | 2012-12-06 |
20120309106 | DETECTION OF A TARGET IN A SAMPLE - The invention concerns a system, device, kit and method for detecting the presence, or concentration of a target in a sample. An assay set comprising at least two spaced apart electrodes is used, comprising a recognition moiety, capable of specific binding to the target, which is attached to at least one of the electrodes or the substrate therein between. If the recognition moiety binds the target then a conductive bridge can be formed between the electrodes, based on the complex between the recognition moiety and the target. The conductive bridge is formed by using nucleation-center forming entities attached to the complexes or to the targets from which a conductive substance is substantially grown. Alternatively the conducting bridge forms a conductive polymer between the electrodes. | 2012-12-06 |
20120309107 | Direct Sensing of Molecular Species by Polyfluors on a DNA Backbone - Nucleoside analogs are provided; and fluorescent sensors comprising the nucleoside analogs. The sensors comprise multiple chromophores built on a DNA backbone, in which all the natural DNA bases are replaced by excimeric or exciplex-forming fluorophores, ligands, quenchers and spacers in thousands of combinations. The sensors find use in the detection and identification of target analytes by fluorescence, e.g., detection of metal ions, neutral organic compounds and anions. The sensors find use in the detection and identification of molecular species in the vapor or gaseous phase, or the liquid phase. The sensors find use in qualitative and quantitative screening and detection methods. | 2012-12-06 |
20120309108 | MULTI-ANALYTE SYSTEM AND METHOD BASED ON IMPEDIMETRIC MEASUREMENTS - The invention discloses a system for the simultaneous detection and/or quantification of various analytes in a sample or for the simultaneous detection and/or quantification of an analyte in various samples, comprising: a multi-electrode chip ( | 2012-12-06 |
20120309109 | METHOD FOR DETERMINING THE BINDING CONSTANT OF HIGH AFFINITY COMPOUNDS - The invention relates to a method for determining the binding constant of a compound of interest to proteins comprising the following steps: a) adding the high affinity compound to a two-chamber system, wherein the two chambers are separated by a semipermeable membrane, which is permeable for the compound of interest, and determining the amount of the high affinity compound of interest in one of the chambers after the distribution equilibrium has been reached, b) adding a sink compound to one of the chambers whereby the sink compound can not permeate the membrane, and determining the distribution coefficient of the compound of interest to the sink compound after the distribution equilibrium has been reached, c) adding an unspecific protein to the other chamber, whereby the unspecific protein can not permeate the membrane, and determining the distribution coefficient of the compound of interest to the unspecific protein in presence of a sink compound after the distribution equilibrium has been reached, and d) determining the binding constant of the test compound with the distribution coefficient of steps b) and c). | 2012-12-06 |
20120309111 | BIOSAMPLE PLATE WITH DATA STORAGE AND WIRELESS COMMUNICATION MEANS - Embodiments of the disclosure relate to a biosample plate that includes a memory component for storing information related to the biosample, biosample plate and biosample analysis data, and a wireless communication interface for transferring information to and from the biosample plate. The biosample plate may be used with an analyzing and data recording system such as an electromagnetic tape drive. The disclosed biosample plate facilitates the correlation between a large number of biosample plates and data as data remains with the corresponding biosamples both when the biosample plates are in use and when they are in storage. The wireless communication interface may comprise an antenna disposed in a biosample plate for data transmission to and from the biosample plate by radio signals. | 2012-12-06 |
20120309112 | FERROELECTRIC MEMORY DEVICE AND FABRICATION PROCESS THEREOF, FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE - A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug, wherein the ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below, the lower electrode being connected electrically to the conductive plug, a layer containing oxygen being interposed between the conductive plug and the lower electrode, a layer containing nitrogen being interposed between the layer containing oxygen and the lower electrode, a self-aligned layer being interposed between the layer containing nitrogen and the lower electrode. | 2012-12-06 |
20120309113 | Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures - Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials. | 2012-12-06 |
20120309114 | METHODS FOR REPAIRING LOW-K DIELECTRICS USING CARBON PLASMA IMMERSION - Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process. | 2012-12-06 |
20120309115 | APPARATUS AND METHODS FOR SUPPORTING AND CONTROLLING A SUBSTRATE - Embodiments of the present invention provide apparatus and methods for supporting and controlling a substrate during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a chamber body defining an inner volume, a substrate support disposed in the inner volume, and an auxiliary force assembly configured to apply an auxiliary force to the substrate. Another embodiment provides a gas delivery assembly configured to adjust a thermal mass of a fluid flow delivered to position, control and/or rotate a substrate. | 2012-12-06 |
20120309116 | Substrate Analysis Using Surface Acoustic Wave Metrology - A system for imposing and analyzing surface acoustic waves in a substrate to determine characteristics of the substrate is disclosed. Optical elements and arrangements for imposing and analyzing surface acoustic waves in a substrate are also disclosed. NSOM's, gratings, and nanolight elements may be used to impose surface acoustic waves in a substrate and may also be used to measure transient changes in the substrate due to the passage of surface acoustic waves therethrough. | 2012-12-06 |
20120309117 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device wherein a semiconductor element is sealed with mold resin, a MOS structure is on an upper side of the semiconductor chip, and a PN junction region is on a back side of the semiconductor chip, comprises: obtaining an in-plane distribution of impurity concentration of the PN junction region in the semiconductor chip before encapsulation so that an in-plane distribution of breakdown voltage and leakage current of the semiconductor chip become uniform after encapsulation; forming the PN junction region having the obtained in-plane distribution of impurity concentration on the back side of the semiconductor chip; and sealing the semiconductor chip with the resin after forming the PN junction region. | 2012-12-06 |
20120309118 | SILICON WAFER ALIGNMENT METHOD USED IN THROUGH-SILICON-VIA INTERCONNECTION - A method of silicon wafer alignment used in through-silicon-via interconnection for use in the field of high-integrity packaging technology is disclosed. In one aspect, the method includes aligning and calibrating the upper and lower silicon wafers, stacked and interconnected electrically, so as to improve alignment accuracy of silicon wafers and reduce interconnection resistances. In some embodiments, the integrated circuit chip made by the method improves speed and energy performance. | 2012-12-06 |
20120309119 | VACUUM TRAY AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE USING THE SAME - There is provided a vacuum tray including a pocket part; a seating part being stepped downwardly from a bottom surface of the pocket part and having a light emitting device seated therein; and a cavity part being stepped downwardly from edges of the seating part and having an electrode terminal of the light emitting device accommodated therein. The pocket part may include a plurality of pocket parts having a matrix structure, such that the plurality of pocket parts are arranged in columns and rows. | 2012-12-06 |
20120309120 | METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE - A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof. | 2012-12-06 |
20120309121 | METHOD OF MAKING SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A method of making a semiconductor optical integrated device includes the steps of forming, on a substrate, a plurality of semiconductor integrated devices including a first optical semiconductor element having a first bonding pad and a second optical semiconductor element; forming a plurality of bar-shaped semiconductor optical integrated device arrays by cutting the substrate, each of the semiconductor optical integrated device arrays including two or more semiconductor optical integrated devices; alternately arranging the plurality of semiconductor optical integrated device arrays and a plurality of spacers in a thickness direction of the substrate so as to be fixed in place; and forming a coating film on a facet of the semiconductor optical integrated device array. Furthermore, the spacer has a movable portion facing the first bonding pad, the movable portion protruding toward the first bonding pad and being displaceable in a protruding direction. | 2012-12-06 |
20120309122 | LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - The present invention is to provide an organic light emitting display and a method of manufacturing the same. The light emitting display according to the present invention includes: a first substrate on which a plurality of light emitting devices having first electrodes, organic light emitting layers, and second electrodes are disposed; a second substrate disposed to face the first substrate; a dam member disposed between the first substrate and the second substrate to surround the plurality of light emitting devices; an inorganic sealing material disposed between the first substrate and the second substrate in an outer area of the dam member and attaching the first substrate to the second substrate; and a silicon filling material provided between the first substrate and the second substrate inward of the dam member to be in contact with the second electrodes. | 2012-12-06 |
20120309123 | METHOD FOR MANUFACTURING QUANTUM CASCADE LASER - A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming an etching mask having a striped pattern on the second semiconductor region; forming a semiconductor mesa structure having a mesa shape in cross section by etching the first and second semiconductor regions using the etching mask; forming an insulating layer over a top portion and side surfaces of the semiconductor mesa structure and the first semiconductor region; forming an opening in a portion of the insulating layer that is disposed on the top portion of the semiconductor mesa structure; and forming an electrode over the inside of the opening of the insulating layer, the top portion and side surfaces of the semiconductor mesa structure, and the first semiconductor region. | 2012-12-06 |
20120309124 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800° C. to 950° C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage. | 2012-12-06 |
20120309125 | BUFFER LAYER DEPOSITION METHODS FOR GROUP IBIIIAVIA THIN FILM SOLAR CELLS - The present invention provides methods for forming a buffer layer for Group IBIIIAVIA solar cells. The buffer layer is formed using chemical bath deposition and the layer is formed in steps. A first buffer layer is formed on the absorber and the first buffer layer is then treated using etching, oxidizing, annealing or some combination thereof. Subsequently a second buffer layer is then positioned on the treated surface. Additional buffer layers can be added following treatment of the previously deposited layer. | 2012-12-06 |
20120309126 | METHOD OF MANUFACTURING PHOTOELECTRODE STRUCTURE - A method of forming a photoelectrode structure includes: disposing a light-scattering layer including a nanowire on a photoanode substrate; and coating the light-scattering layer with an inorganic binder solution to fix the light-scattering layer on the photoanode substrate. Due to the structure of the photoelectrode structure, the adhesive force between the light-scattering layer and the photoanode substrate is enhanced and the photocurrent density is increased. | 2012-12-06 |
20120309127 | METHOD FOR FABRICATING 3D INTEGRATED CIRCUIT DEVICE USING INTERFACE WAFER AS PERMANENT CARRIER - A computer readable medium is provided that is encoded with a program comprising instructions for performing a method for fabricating a | 2012-12-06 |
20120309128 | DISABLING ELECTRICAL CONNECTIONS USING PASS-THROUGH 3D INTERCONNECTS AND ASSOCIATED SYSTEMS AND METHODS - Pass-through 3D interconnects and microelectronic dies and systems of stacked dies that include such interconnects to disable electrical connections are disclosed herein. In one embodiment, a system of stacked dies includes a first microelectronic die having a backside, an interconnect extending through the first die to the backside, an integrated circuit electrically coupled to the interconnect, and a first electrostatic discharge (ESD) device electrically isolated from the interconnect. A second microelectronic die has a front side coupled to the backside of the first die, a metal contact at the front side electrically coupled to the interconnect, and a second ESD device electrically coupled to the metal contact. In another embodiment, the first die further includes a substrate carrying the integrated circuit and the first ESD device, and the interconnect is positioned in the substrate to disable an electrical connection between the first ESD device and the interconnect. | 2012-12-06 |
20120309129 | SEMICONDUCTOR PACKAGE FOR DISCHARGING HEAT AND METHOD FOR FABRICATING THE SAME - A semiconductor package for quickly discharging heat and a method for fabricating the same are disclosed. The semiconductor package includes a semiconductor package module having a first insulation member and at least one fluid passage passing through the insulation member. Circuit patterns are formed on a first face of the first insulation member. Semiconductor chips are then disposed on the first face and are electrically connected with the circuit patterns respectively. A second insulation member is formed so as to surround the side faces of the semiconductor chips, the first insulation member, and the circuit patterns. Finally, a through electrode is formed passing through the second insulation member of the semiconductor package module and electrically connecting to the circuit patterns. | 2012-12-06 |
20120309130 | Method of Manufacturing a Semiconductor Device - In one embodiment a method for manufacturing a semiconductor device comprises arranging a wafer on a carrier, the wafer comprising singulated chips; bonding the singulated chips to a support wafer, and removing the carrier. | 2012-12-06 |
20120309131 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. | 2012-12-06 |
20120309132 | CURVILINEAR HEAT SPREADER/LID WITH IMPROVED HEAT DISSIPATION - A heat spreader or lid for a microelectronic package, in which the heat spreader has an underside surface that includes at least one curvilinear contour, in which the curvilinear contour is selected from at least one positive or protruding curvilinear feature, at least one negative or recessed curvilinear feature, and a combination thereof. A microelectronic package that includes the heat spreader/lid, in which there is improved heat dissipation or reduced mechanical stress in an interface between the heat spreader/lid and a circuit chip. | 2012-12-06 |
20120309133 | ELECTRONIC COMPONENT MOUNTING METHOD - A method of mounting an electronic component allows bumps to land onto electrodes via thermosetting flux formed of first thermosetting resin containing a first active ingredient, and brings a resin reinforcing member formed of second thermosetting resin containing a second active ingredient into contact with the electronic component at reinforcement sections, and then heats the substrate to form solder junction sections that bond the bumps to the electrodes. At the same time, the method forms resin reinforcement sections that reinforce the solder junction sections from the surroundings. A mixing ratio of the second active ingredient in the resin reinforcing member is set greater than a mixing ratio of the first active ingredient in the thermosetting flux. | 2012-12-06 |
20120309134 | Implantable Microelectronic Device and Method of Manufacture - An implantable hermetically sealed microelectronic device and method of manufacture are disclosed. The microelectronic device of the present invention is hermetically encased in a insulator, such as alumina formed by ion bean assisted deposition (“IBAD”), with a stack of biocompatible conductive layers extending from a contact pad on the device to an aperture in the hermetic layer. In a preferred embodiment, one or more patterned titanium layers are formed over the device contact pad, and one or more platinum layers are formed over the titanium layers, such that the top surface of the upper platinum layer defines an external, biocompatible electrical contact for the device. Preferably, the bottom conductive layer is larger than the contact pad on the device, and a layer in the stack defines a shoulder. | 2012-12-06 |
20120309135 | Through-Substrate Vias - A method of etching through-substrate vias comprising depositing a layer of embossable material on a first side and a second side of a thin-film stack, the thin-film stack including a base substrate, embossing the embossable material deposited on the first side and the second side of the thin-film stack with a pattern, hardening the embossable material, and etching the first and second sides of the thin-film stack, the etching of the second side of the thin-film stack forming vias through the base substrate. | 2012-12-06 |
20120309136 | MANUFACTURE METHODS OF THIN FILM TRANSISTOR AND ARRAY SUBSTRATE AND MASK - Embodiments of the disclosed technology disclose manufacture methods of a thin film transistor and an array substrate and a mask therefor are provided. The manufacture method of the thin film transistor comprises: patterning a wire layer by using a exposure machine and a mask with a first exposure amount larger than a normal exposure amount during formation of source and drain electrodes; forming a semiconductor layer on the patterned wire layer; patterning the semiconductor layer by using the exposure machine and the mask with a second exposure amount smaller than the first exposure amount. The mask comprises a source region for forming the source electrode, a drain region for forming the drain electrode and a slit provided between the source region and the drain region, and the width of the slit is smaller than the resolution of the exposure machine. | 2012-12-06 |
20120309137 | METHOD FOR FABRICATING MOSFET ON SILICON-ON-INSULATOR WITH INTERNAL BODY CONTACT - A method is provided for fabricating a semiconductor device. According to the method, a semiconductor layer is formed over a semiconductor-on-insulator substrate, and a gate is formed on the semiconductor layer. Source and drain extension regions and a deep drain region are formed in the semiconductor layer. A deep source region is formed in the semiconductor layer. A drain metal-semiconductor alloy contact is located on the upper portion of the deep drain region and abutting the drain extension region. A source metal-semiconductor alloy contact abuts the source extension region. The deep source region is located below and contacts a first portion of the source metal-semiconductor alloy contact. The deep source region is not located below and does not contact a second portion of the source metal-semiconductor alloy contact. The second portion of the source metal-semiconductor alloy contact is an internal body contact that directly contacts the semiconductor layer. | 2012-12-06 |
20120309138 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density, and a method of manufacturing such a semiconductor device. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines on the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed. | 2012-12-06 |
20120309139 | METHOD FOR MANUFACTURING FIN FIELD-EFFECT TRANSISTOR - An embodiment of the present invention discloses a method for manufacturing a FinFET, when a fin is formed, a dummy gate across the fin is formed on the fin, a source/drain opening is formed in both the cover layer and the first dielectric layer at both sides of the dummy gate, the source/drain opening is at both sides of the fin covered by the dummy gate and is an opening region surrounded by the cover layer and the first dielectric layer around it. In the formation of a source/drain region in the source/drain opening, stress is generated due to lattice mismatching, and applied to the channel due to the limitation by the source/drain opening in the first dielectric layer, thereby increasing the carrier mobility of the device, and improving the performance of the device. | 2012-12-06 |
20120309140 | MANUFACTURING METHOD FOR THIN FILM SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR THIN FILM SEMICONDUCTOR ARRAY SUBSTRATE, METHOD OF FORMING CRYSTALLINE SILICON THIN FILM, AND APPARATUS FOR FORMING CRYSTALLINE SILICON THIN FILM - A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side. | 2012-12-06 |
20120309141 | HETERO-STRUCTURED INVERTED-T FIELD EFFECT TRANSISTOR - The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor material is selected to provide high mobility to a first carrier type. The method also includes forming a second layer of a second semiconductor material above the first layer of semiconductor material. The second semiconductor material is selected to provide high mobility to a second carrier type opposite the first carrier type. The method further includes forming a first masking layer adjacent the second layer and etching the second layer through the first masking layer to form at least one feature in the second layer. Each feature in the second layer forms an inverted-T shape with a portion of the second layer. | 2012-12-06 |
20120309142 | TRANSISTORS FOR REPLACING METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN NANOELECTRONICS - Junction field effect transistors (JFETs) are shown to be a viable replacement for metal oxide semiconductor field effect transistors (MOSFETs) for gate lengths of less than about 40 nm, providing an alternative to the gate leakage problems presented by scaled down MOSFETs. Integrated circuit designs can have complementary JFET (CJFET) logic cells substituted for existing MOSFET-based logic cells to produce revised integrated circuit designs. Integrated circuits can include JFETS where the channel comprises a wide bandgap semiconductor material and the gate comprises a narrow bandgap semiconductor material. Mixtures of JFET and MOSFET transistors can be included on an integrated circuit design. | 2012-12-06 |
20120309143 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a silicon substrate in which active regions of a memory cell are defined, a gate electrode formed on a device isolation insulating film to extend in a first direction, a first insulating film formed on the silicon substrate and the gate electrode, a first plug formed to penetrate the first insulating film, to overlap with the gate electrode and the first active region, and to extend in a second direction perpendicular to the first direction, a second plug penetrating the first insulating film above the second active region, a second insulating film formed on the first insulating film, and an interconnection buried in the second insulating film, and formed to recede from a side surface of the first plug in the second direction and to cover only part of an upper surface of the first plug. | 2012-12-06 |
20120309144 | METHODS OF FORMING MOSFET DEVICES USING NITROGEN-INJECTED OXIDE LAYERS TO FORM GATE INSULATING LAYERS HAVING DIFFERENT THICKNESSES - In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer. | 2012-12-06 |
20120309145 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas. | 2012-12-06 |
20120309146 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In the semiconductor device composing MOS transistor on which impurities are added from the surface of a P-type substrate, the region of immediate below a gate, layer is the P-type substrate on which the impurities are not added, and first and second MOS devices, having an N-type diffusion layer are provided on the surface region of the P-type substrate circumscribing the gate layer. The gate layer of the first MOS device, and the N-type diffusion layer of the second MOS device are connected, and the N-type diffusion layer of the first MOS device and the gate layer of the second MOS device are connected, and thereby a first capacitive element is composed. | 2012-12-06 |
20120309147 | Semiconductor Component and Method for Producing a Semiconductor Component - A semiconductor component is produced by forming a trench in a semiconductor region. The trench has an upper trench region and a lower trench region. The upper trench region is wider than the lower trench region such that a step is formed in the semiconductor region. A dopant is introduced into the step to form a locally delimited dopant region in the semiconductor region. | 2012-12-06 |
20120309148 | METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE - A power semiconductor device with improved avalanche capability structures is disclosed. By forming at least an avalanche capability enhancement doped regions with opposite conductivity type to epitaxial layer underneath an ohmic contact doped region which surrounds at least bottom of trenched contact filled with metal plug between two adjacent gate trenches, avalanche current is enhanced with the disclosed structures. | 2012-12-06 |
20120309149 | CROSS-HAIR CELL BASED FLOATING BODY DEVICE - A non-planar transistor having floating body structures and methods for fabricating the same are disclosed. In certain embodiments, the transistor includes a fin having upper and lower doped regions. The upper doped regions may form a source and drain separated by a shallow trench formed in the fin. During formation of the fin, a hollow region may be formed underneath the shallow trench, isolating the source and drain. An oxide may be formed in the hollow region to form a floating body structure, wherein the source and drain are isolated from each other and the substrate formed below the fin. In some embodiments, independently bias gates may be formed adjacent to walls of the fin. In other embodiments, electrically coupled gates may be formed adjacent to the walls of the fin. | 2012-12-06 |
20120309150 | METHOD OF FABRICATING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device is provided. The method includes forming a gate having a first material on a substrate and a layer of a second material overlaying the gate. Sidewall spacers are formed on opposite sides of the gate. A characteristic of a portion of the substrate between adjacent sidewall spacers is changed using the layer of second material and the sidewall spacers as a mask. An isotropic wet etch process is performed to remove the substrate portion with a changed characteristic to form a recess in the substrate. An orientation selective wet etching process is performed on the recess to shape the inner walls of the recess into sigma-shape. Changing a substrate characteristic in conjunction with isotropic wet etching prevents the substrate from being damaged, and therefore can obtain defect free epitaxial SiGe growth performance. | 2012-12-06 |
20120309151 | Method of Fabricating Semiconductor Devices - Method of fabricating a semiconductor device includes forming a gate having a first material on a substrate and forming a layer of a second material overlaying the gate. Sidewall spacers are formed on opposite sides of the gate. The substrate is dry etched using the layer of second material and the sidewall spacers as a mask forming a recess in the substrate between two adjacent gates. A liner oxide layer is formed on inner walls of the recess. The liner oxide layer is removed by isotropic wet etching. Orientation selective wet etching is performed on the recess to shape the inner wall of the recess so as to cause the inner wall of the recess to be sigma-shaped. By removing the substrate portions having lattice defects due to dry etching through oxidation and wet etching, defect-free epitaxial growth performance is realized. | 2012-12-06 |
20120309152 | Method of Fabricating Semiconductor Devices - A method of fabricating semiconductor device includes forming a plurality of gates on a substrate, forming a top layer on a top surface of each gate, forming sidewall spacers on opposite sides of each gate, and forming sacrificial spacers on the sidewall spacers. The method further includes performing a dry etching process on the substrate using the top layer and the sacrificial spacers as a mask to form a recess of a first width in the substrate between two adjacent gates, performing an isotropic wet etching process on the recess to expand the first width to a second width, and performing an orientation selective wet etching process on the recess to shape the rectangular-shaped recess into a Σ-shaped recess. | 2012-12-06 |
20120309153 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 2012-12-06 |
20120309154 | VERTICAL JUNCTION FIELD EFFECT TRANSISTOR WITH MESA TERMINATION AND METHOD OF MAKING THE SAME - A vertical junction field effect transistor (VJFET) having a mesa termination and a method of making the device are described. The device includes: an n-type mesa on an n-type substrate; a plurality of raised n-type regions on the mesa comprising an upper n-type layer on a lower n-type layer; p-type regions between and adjacent the raised n-type regions and along a lower sidewall portion of the raised regions; dielectric material on the sidewalls of the raised regions, on the p-type regions and on the sidewalls of the mesa; and electrical contacts to the substrate (drain), p-type regions (gate) and the upper n-type layer (source). The device can be made in a wide-bandgap semiconductor material such as SiC. The method includes selectively etching through an n-type layer using a mask to form the raised regions and implanting p-type dopants into exposed surfaces of an underlying n-type layer using the mask. | 2012-12-06 |
20120309155 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. A substrate is provided, gates each including a silicon layer, a silicide layer and a cap layer are formed thereon, and doped regions are formed at two sides of each gate. An insulating layer is formed to cover a memory region and a periphery region. First contact holes are formed in the insulating layer in the memory region, and each first contact hole is disposed between the two adjacent gates and exposes the doped region. A contact plug is formed in each first contact hole to electrically connect the doped region. A patterned mask layer is formed on the substrate to cover the memory region and expose a portion of the periphery region. Using the patterned mask layer as a mask, second and third contact holes are formed in the insulating layer in the periphery region, to expose the silicide layer and the doped region. | 2012-12-06 |
20120309156 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE - A plurality of contact plugs to be connected to a drain region or a source region of each of transistors constituting a sub-word line driver that drives a sub-word line are formed, by using a SAC line technique of selectively etching an insulation layer that covers each of the transistors by using a mask having line-shaped openings provided across a portion in which the contact plugs of each of the transistors are to be formed. | 2012-12-06 |
20120309157 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable. | 2012-12-06 |
20120309158 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer. | 2012-12-06 |
20120309159 | METHOD TO SELECTIVELY GROW PHASE CHANGE MATERIAL INSIDE A VIA HOLE - An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode. | 2012-12-06 |