49th week of 2011 patent applcation highlights part 14 |
Patent application number | Title | Published |
20110297879 | PACKAGED REACTIVE MATERIALS AND METHOD FOR MAKING THE SAME - A packaged reactive material includes a reactive material that is configured to increase in size when exposed to a predetermined gas, and an inert coating material surrounding a surface of the reactive material. The inert coating material is configured to allow the predetermined gas to diffuse through to the reactive material and has an elongation that will not accommodate expansion of the reactive material at full saturation of the predetermined gas. | 2011-12-08 |
20110297880 | Polymer composition - A polymer composition comprising: at least one polycondensation polymer having a heat deflection temperature (HDT) of above 80° C. under a load of 1.82 MPa when measured according to ASTM D648 [polymer (P)]; at least one perfluoropolyether block copolymer [polymer (F)] comprising: A) one or more (per)fluoropolyoxyalkylene segment (chain R | 2011-12-08 |
20110297881 | FOUR-RING LIQUID CRYSTAL COMPOUND HAVING TETRAHYDROPYRAN AND 2,2',3,3'-TETRAFLUOROBIPHENYL, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The invention provides a liquid crystal compound that has a large negative dielectric anisotropy (Δ∈) and also has at least one of characteristics such as the stability to heat, light or the like, a high clearing point, a suitable refractive index anisotropy (Δn), a large negative dielectric anisotropy (Δ∈) and an excellent compatibility with other liquid crystal compounds. An excellent effect in which especially the value of the dielectric anisotropy (Δ∈) is increased negatively is achieved by use of the compound having two moieties of
| 2011-12-08 |
20110297882 | DENSE HIGH-SPEED SCINTILLATOR MATERIAL OF LOW AFTERGLOW - The invention relates to an inorganic scintillator material of formula Lu | 2011-12-08 |
20110297883 | Compositions of esters of fluorosubstituted alcanoic acids - Composition of esters of fluorosubstituted alcanoic acids, comprising or consisting essentially of a compound of a formula selected from the group consisting of:
| 2011-12-08 |
20110297884 | Method of producing trichlorosilane (TCS) rich chlorosilane product stably from a fluidized gas phase reactor (FBR) and the structure of the reactor -II - A fluidized bed reactor (FBR) for producing chlorosilane mixture, which has high contents of tri-chlorosilane (TCS), by hydro chlorination of metallurgical silicon (MGSI) and a method of producing high contents of TCS stably with the FBR is disclosed. A cooling jacket, which surrounds the lower reactor section, combined with inert initial charging material, which does not react with HCl during the reaction at a temperature of above 300° C. and pressure of above 5 bar, controls the extreme exothermal heat of the reaction. In addition to this, combination of an optimized gas distributor and a feeder that can feed the metallurgical silicon with accuracy of ±5% enabled to realize uniform temperature profile within the reaction zone within ±1° C. deviation at 350° C. of average reaction temperature and at 5 bar of reaction pressure. Without the initial charging material, temperature profile within the reaction zone is controlled within ±30° C. | 2011-12-08 |
20110297885 | PROCESS TO CONVERT BIOMASS - The invention is directed to a process to prepare a fuel or an intermediate to a fuel from residues as obtained in a palm oil process wherein shredded agricultural residue having a water content of between 40 and 75 wt % water is dried to obtain a dried agricultural residue having a water content of between 5 and 40 wt % and then is compacted into pellets, cubes, or small briquettes having a two dimensional size of between 5 and 1000 mm and a thickness of between 5 and 300 mm and a density of between 200 and 1200 kg/m | 2011-12-08 |
20110297886 | PROCESS AND EQUIPMENT FOR THE PRODUCTION OF AMMONIA MAKE-UP SYNGAS WITH AN AIR SEPARATION UNIT AS NITROGEN SOURCE - A process and a plant for producing a makeup synthesis gas ( | 2011-12-08 |
20110297887 | Printing process for preparing particulate products - The present invention provides a process of preparing particulate products, the process comprising the steps of (i) printing a liquid precursor of a non-metal particulate onto or into a collecting substrate and (ii) recovering non-metal particulates. | 2011-12-08 |
20110297888 | COLOURED PARTICLES FOR ELECTROPHORETIC DISPLAYS - This invention relates to coloured polymer particles preferably with surface functionality for charge retention, a process for their preparation, the use of these particles for the preparation of an electrophoretic device, and to colour electrophoretic displays comprising such particles. | 2011-12-08 |
20110297889 | METHOD FOR MANUFACTURING A COMPOSITE MATERIAL OF SnO2 AND CARBON NANOTUBES AND/OR CARBON NANOFIBERS, MATERIAL OBTAINED BY THE METHOD, AND LITHIUM BATTERY ELECTRODE COMPRISING SAID MATERIAL - A method for manufacturing a composite material including tin oxide particles and a fibrillar carbon material, including synthesising tin hydroxide particles obtained from a tin salt by precipitation/nucleation in a water-alcohol medium, in the presence of the fibrillar carbon material and an acid, the fibrillar carbon material being nanotubes, carbon nanofibres, or a mixture of the two. The method can be used for the production of negative electrodes for lithium-ion batteries. | 2011-12-08 |
20110297890 | ELECTRICALLY CONDUCTIVE POLYOLEFIN BLENDS - An electrically conductive polymer compound is disclosed. The compound comprises a matrix comprising two polyolefin copolymers having different melt mass flow rates and electrically conductive functional additive particles dispersed in the matrix. The compound is useful for making extruded and molded plastic articles that need electrical conductivity. | 2011-12-08 |
20110297891 | POSITIVE TEMPERATURE COEFFICIENT MATERIALS WITH REDUCED NEGATIVE TEMPERATURE COEFFICIENT EFFECT - Positive temperature coefficient (PTC) compositions having a reduced negative temperature coefficient effect (NTC) are provided that are achieved without crosslinking the thermoplastic base material. The PTC compositions include a thermoplastic base resin, an electrically conductive filler and particles of a polymeric additive dispersed in the PTC composition. | 2011-12-08 |
20110297892 | CNT-INFUSED FIBERS IN THERMOPLASTIC MATRICES - A composite includes a thermoplastic matrix material and a carbon nanotube (CNT)-infused fiber material dispersed through at least a portion of the thermoplastic matrix material. | 2011-12-08 |
20110297893 | PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE CRYSTAL OBTAINED THEREBY AND APPLICATION OF SAME - A method for producing n-type SiC single crystal, including: adding gallium and nitrogen, which is a donor element, for obtaining an n-type semiconductor during crystal growth of SiC single crystal, such that the amount of nitrogen as represented in atm unit is greater than the amount of gallium as represented in atm unit; an n-type SiC single crystal obtained according to this production method; and, a semiconductor device that includes the n-type SiC single crystal. | 2011-12-08 |
20110297894 | Proton conducting ceramics in membrane separations - Perovskite materials of the general formula SrCeO | 2011-12-08 |
20110297895 | METHOD FOR MAKING LITHIUM BATTERY CATHODE MATERIAL - A method for making a lithium battery cathode material is disclosed. A mixed solution including a solvent, an iron salt material, and a phosphate material is provided. An alkaline solution is added into the mixed solution until the mixed solution has a pH value ranging from about 1.5 to 5. The iron salt react with the phosphate material to form a plurality of iron phosphate precursor particles which are added in a mixture of a lithium source solution and a reducing agent to form a lithium iron phosphate precursor slurry. The lithium iron phosphate precursor slurry is heat-treated. | 2011-12-08 |
20110297896 | ACRYLIC RESIN COMPOSITION, AND OPTICAL FILM COMPRISING SAME - The present invention relates to an acrylic copolymer resin containing: 1) an alklyl (meth)acrylate-based monomer; 2) a (meth)acrylate-based monomer containing an aliphatic ring and/or an aromatic ring; and 3) at least an imide-based monomer or a styrene-based monomer, to a resin composition containing said acrylic copolymer resin and a resin containing an aromatic ring and/or an aliphatic ring in the main chain thereof, to an optical film comprising said resin composition, and to a liquid crystal display device comprising said optical film. The optical film according to the present invention has excellent heat resistance, optical transparency, etc. | 2011-12-08 |
20110297897 | PROCESS FOR PRODUCING WATER-PROOF POLARIZING FILM | 2011-12-08 |
20110297898 | PREPARATION OF A PHOTOCHROMIC INK - The present invention relates to a photochromic ink, the process for its preparation which is based on a spiropyran powder obtainable by melting, cooling and crushing, and to a new form of a spiropyran obtainable thereby. Said process to prepare a photochromic ink comprises the steps of a) heating and melting the spiropyran at a temperature below 250 C, b) cooling the melt to obtain a solidified spiropyran, c) crushing the solidified spiropyran to obtain a powder, d) optionally adding the powder to a binder providing the basis for the photochromic ink. | 2011-12-08 |
20110297899 | INFRARED SHIELDING NANOPARTICLE, ITS MANUFACTURING METHOD, INFRARED SHIELDING NANOPARTICLE DISPERSION USING THE SAME, AND INFRARED SHIELDING BASE MATERIAL - There is provided infrared shielding nanoparticles having excellent water-resistant property and excellent infrared shielding property, which is the infrared shielding nanoparticles of composite tungsten oxide expressed by a general formula WyOz and/or a general formula MxWyOz, with an average primary particle size of the nanoparticle being 1 nm or more and 800 nm or less, and a surface of the nanoparticle being coated with tetrafunctional silane compound or its hydrolysis product and/or an organic metal compound. | 2011-12-08 |
20110297900 | DARK GREEN SOLAR CONTROL GLASS COMPOSITION - The present invention provides a dark green colored glass composition having a soda-lime-silica glass composition, wherein the coloring compounds comprises in weight percentage: from 0.71 to 1.50% of total iron expressed as Fe | 2011-12-08 |
20110297901 | COMPOSITIONS AND METHODS FOR REDUCING FIRE HAZARD OF FLAMMABLE REFRIGERANTS - The present invention relates to compositions comprising flammable refrigerant, fire hazard-reducing agent, and optionally a lubricant suitable for use in a refrigeration or air conditioning apparatus. Further, the present invention relates to compositions comprising lubricant and fire hazard-reducing agent and methods for reducing flammability of flammable refrigerant, for delivering a fire hazard-reducing agent to a refrigeration or air conditioning apparatus, and for replacing a non-flammable refrigerant with a flammable refrigerant. | 2011-12-08 |
20110297902 | Pan Puller for Removing Forming Pans Between Joists of a Concrete Floor - A system for removing a forming pan from a concrete slab having integral joists. In some embodiments, the system includes a forklift powered by a power supply; and a pan puller supported thereon. The pan puller includes a motor receiving power from the power supply, a wheel driven to rotate by the motor, the wheel having a plurality of teeth adapted to engage and remove the forming pan from the joint, and a basket configured to receive and contain the removed forming pan. | 2011-12-08 |
20110297903 | WINCH ASSEMBLY - A winch assembly includes a winch and a hitch assembly coupled to the winch. The hitch assembly includes an attachment bar, a spear receiving portion and a spear configured to be seated in the spear receiving portion. A cable is coupled to the winch and the spear for extending and/or retracting the spear relative to the spear receiving portion. | 2011-12-08 |
20110297904 | HUMIDITY RESPONSIVE MATERIALS AND SYSTEMS AND METHODS USING HUMIDITY RESPONSIVE MATERIALS - The invention relates to silk or other materials formed to have predetermined contraction/relaxation characteristics, wherein the contraction/relaxation characteristics are initiated by exposure thereof to predetermined humidity characteristics in the adjacent atmosphere. The materials may comprise a single silk fiber, a bundle of fibers of a predetermined size or diameter, a meshwork of fibers forming a predetermined configuration such as one or more sheets, bundles or other bodies. In this manner, the material can be scaled across a size range of any desired magnitude to produce predetermined force and/or displacement characteristics in association therewith. | 2011-12-08 |
20110297905 | SWING SUPPORT MOBILIZATION LIFT - A swing support mobilization lift includes a jack and a pivotably positionable swing arms, pivotally coupled to the jack, such that the attachment mechanism is capable of being initially displaced in the plane of the jack mechanism during insertion of the lifting device in a narrowly accessible space adjacent to shelving. Then, the swing arms are capable of being pivoted to extend outwardly from the plane of the surface of a jack facing the shelving, such that the shelving may be attached to the swing arms, such as by pins tethered to the jack. In one example, a pair of swing arms disposed on opposite sides of a portion of the shelving sandwich the portion of the shelving and support opposite ends of the pins coupling the swing arms to the shelving. | 2011-12-08 |
20110297906 | HYDRAULIC TENSIONING DEVICE FOR A FLEXIBLE DRIVE MEANS - A hydraulic tensioning device ( | 2011-12-08 |
20110297907 | SHOCK-ABSORBING DEVICE FOR NET BODY OF GUARD FENCE - There is provided a shock-absorbing device for a net body of a guard fence, capable of improving a net body's effectiveness of absorbing impact by enlarging the amount of deformation of the net body once the net body has been subjected to a force of impact due to rockfall, mudslide, avalanche or the like. A net body | 2011-12-08 |
20110297908 | Phase Change Memory Cells and Fabrication Thereof - A phase change memory cell, e.g. a line-cell ( | 2011-12-08 |
20110297909 | MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY - A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane. | 2011-12-08 |
20110297910 | METHOD OF FABRICATION OF PROGRAMMABLE MEMORY MICROELECTRIC DEVICE - A method of fabricating a programmable memory microelectronic device includes depositing onto a first electrode an intermediate layer of a material having a chalcogenide; depositing an ionizable metallic layer on the intermediate layer; irradiating with ultraviolet radiation the ionizable metallic layer so that metallic ions from the ionizable metallic layer diffuse into the intermediate layer to form a chalcogenide material containing metallic ions, and depositing a second electrode on the layer of chalcogenide material containing metallic ions obtained in the prior step. The second and third steps are repeated at least n times, where n is an integer greater than or equal to 1. The ionizable metallic layer deposited during the second step has a sufficiently small thickness that the metallic ions may be diffused totally during the irradiation (third) step. | 2011-12-08 |
20110297911 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique used for a semiconductor device formed by stacking multiple structural bodies each having a semiconductor device, for preventing generation of thermal load on a structural body at a lower layer which is caused by a laser used in a step of forming a structural body at an upper layer. In a phase-change memory including multiple stacked memory matrices, a metal film is disposed between a memory matrix at a lower layer and a memory matrix at an upper layer formed over the memory matrix at the lower layer, in which the laser used for forming the memory matrix is reflected at the metal film and prevented from transmitting the metal film, thereby preventing the phase-change material layer, etc. in the memory matrix at the lower layer from being directly heated excessively by the laser. | 2011-12-08 |
20110297912 | Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof - A three-dimensional array of memory elements is formed across multiple layers of planes positioned at different distances above a semiconductor substrate. The memory elements reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The three-dimensional array includes a two-dimensional array of pillar lines from the substrate through the multiple layers of planes which together with arrays of word lines on each plane are used to access the memory elements. The memory elements of the multiple layers are formed simultaneously in an orientation parallel to the substrate thereby reducing processing cost. In another aspect, a diode is formed in series with each memory element to reduce current leakage. The diode is incorporated within a pillar line acting as a bit line without taking up additional space. | 2011-12-08 |
20110297913 | NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT - Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc. | 2011-12-08 |
20110297914 | GALLIUM NITRIDE-BASED FLIP-CHIP LIGHT-EMITTING DIODE WITH DOUBLE REFLECTIVE LAYERS ON ITS SIDE AND FABRICATION METHOD THEREOF - The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder. By arranging a double reflection structure including a DBR and a metal reflective layer on the sloping side of the LED chip, the good reflectivity of the reflective layers can be fully utilized, thereby improving the light-emission efficiency of the LED. | 2011-12-08 |
20110297915 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 2011-12-08 |
20110297916 | N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits - A complementary metal oxide semiconductor (CMOS) device in which a single In | 2011-12-08 |
20110297917 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing an organic EL element, which may be a top-emitting or a transparent organic EL element, provides an organic EL element having a low driving voltage and a high efficiency. The organic EL element includes a substrate; an anode; an organic EL layer which includes at least an emissive layer, an electron transport layer and a damage-mitigating electron injection layer; and a transparent cathode composed of a transparent conductive oxide material, the damage-mitigating electron injection layer is in contact with the transparent cathode, and the damage-mitigating electron injection layer includes a crystalline oligothiophene compound. | 2011-12-08 |
20110297918 | BENZANTHRACENE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A compound having the structure represented by the following formula (1) or (1)′ as at least a part: | 2011-12-08 |
20110297919 | ORGANIC LIGHT-EMITTING DEVICE - A heterocyclic compound represented by Formula 1 or Formula 2 below and an organic light-emitting device including the heterocyclic compound: | 2011-12-08 |
20110297920 | THIN FILM TRANSISTOR,METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A thin film transistor with improved performance is provided. The thin film transistor includes a gate electrode, an organic semiconductor layer, and a gate insulating layer which is positioned between the gate electrode and the organic semiconductor layer and is adjacent to the organic semiconductor layer. The gate insulating layer contains a material in which a first monomer as at least one of styrene and a derivative of styrene, and a second monomer having carbon-carbon double bond and a cross-linking reaction group are copolymerized and cross-linked. | 2011-12-08 |
20110297921 | WATER-BARRIER ENCAPSULATION METHOD - The present invention generally relates to organic light emitting diode (OLED) structures and methods for their manufacture. To increase the lifetime of an OLED structure, an encapsulating layer may be deposited over the OLED structure. The encapsulating layer may fully enclose or “encapsulate” the OLED structure. The encapsulating layer may have a substantially planar surface opposite to the interface between the OLED structure and the encapsulating layer. The planar surface permits successive layers to be evenly deposited over the OLED structure. The encapsulating layer reduces any oxygen penetration into the OLED structure and may increase the lifetime of the OLED structure. | 2011-12-08 |
20110297922 | Radiation-Emitting Device - A radiation-emitting device for emitting electromagnetic radiation which is a mixture of at least three different partial radiations of a first, a second and a third wavelength range. The radiation-emitting device here comprises a substrate | 2011-12-08 |
20110297923 | Aromatic amine derivative and organic electroluminescent element using same - An aromatic amine derivative represented by the following formula (1): | 2011-12-08 |
20110297924 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - Provided are a long-lifetime organic electroluminescence device which can be fabricated in an improved yield owing to suppressed crystallization of molecules, and an aromatic amine derivative that realizes the device, i.e., a novel aromatic amine derivative having a specific structure. Specifically provided are an organic electroluminescence device, including an organic thin film layer formed of one or more layers including at least a light emitting layer, the organic thin film layer being interposed between a cathode and an anode, and an aromatic amine derivative for at least one layer of the organic thin film layer, in particular, a hole transporting layer, the derivative having at least one such structure that a substituent in which two or more specific heterocycles are linked to each other, in particular, a substituent in which two or more specific heterocycles are linked through an aryl group is bonded to an amine through an aryl group. | 2011-12-08 |
20110297925 | ORGANIC ELECTRONIC DEVICE - The present invention relates to organic electroluminescent devices which comprise aromatic nitrogen heterocyclic compounds, in particular in a hole-injection layer and/or in a hole-blocking layer and/or in an electron-transport layer and/or in an emitting layer. | 2011-12-08 |
20110297926 | Electronic Appliance and Light-Emitting Device - An EL element having a novel structure is provided, which is suitable for AC drive. A light-emitting element of the invention is provided with material layers (material layers each having approximately symmetric I-V characteristics with respect to the zero point in a graph having the abscissa axis showing current values and the ordinate axis showing voltage values) between a first electrode and a layer including an organic compound and between the layer including the organic compound and a second electrode respectively. Specifically, each of the material layers is a composite layer including a metal oxide and an organic compound. | 2011-12-08 |
20110297927 | OXIDE BASED MEMORY - Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second portion of the tunnel barrier includes a second material, forming an oxygen source, and forming a second electrode. | 2011-12-08 |
20110297928 | SEMICONDUCTOR DEVICE - The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased. | 2011-12-08 |
20110297929 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an array substrate, comprising: a base substrate; a pixel electrode pattern and a gate pattern formed on the base substrate, the gate pattern comprises a gate scanning line and a gate electrode of a transistor, both of the gate scanning line and the gate electrode comprise transparent conductive metal layer and the gate metal layer stacking on the substrate, each pixel electrode in the pixel electrode pattern comprises transparent conductive metal layer; a gate insulating layer on the pixel electrode pattern and the gate pattern, an active layer pattern on the gate insulating layer and corresponding to the gate electrode, a via hole in the gate insulating layer for exposing the pixel electrode; and a source/drain pattern on the gate insulating layer, the source/drain pattern comprises a data scanning line crossing with the gate scanning line, source and drain electrodes of the transistor, and the drain electrode is in contact with the pixel electrode through the via hole. | 2011-12-08 |
20110297930 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME - A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer. | 2011-12-08 |
20110297931 | METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. | 2011-12-08 |
20110297932 | Semiconductor device and integrated semiconductor device - The present disclosure provides a semiconductor device including: a semiconductor identifier holding portion configured to hold a semiconductor identifier for identifying a semiconductor device; and a control portion configured such that upon elapse of a predetermined time period following receipt of an externally input instruction to hold the semiconductor identifier, the control portion issues an instruction to the semiconductor device immediately downstream of the semiconductor device to hold a semiconductor identifier of the immediately downstream semiconductor device and that during the time period between the point in time at which the externally input instruction is received and the point in time at which the instruction is issued to the immediately downstream semiconductor device to hold the semiconductor identifier thereof, the control portion causes the semiconductor identifier holding portion to hold the externally input identifier. | 2011-12-08 |
20110297933 | Semiconductor Packages - Provided are a semiconductor package, a semiconductor memory module including the semiconductor package, and a system including the semiconductor memory module. The semiconductor package may include a plurality of main terminals arranged on a surface of the semiconductor package with constant intervals, and the plurality of main terminals may include terminals of a first set including a plurality of input/output terminals to which test signals may be input, and terminals of a second set including a plurality of input/output terminals to/from which signals other than the test signals may be input/output. | 2011-12-08 |
20110297934 | SEMICONDUCTOR DEVICE - A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector region of the electric current detection region. Instability in the IGBT detection current caused by a boundary portion between the IGBT and the diode can be suppressed. In the same way, an electric current detection region is arranged adjacent to the diode element region, and a cathode region of the diode element region is extended to connect with a cathode region of the electric current detection region. Instability in the diode detection current caused by the boundary portion between the IGBT and the diode can be suppressed. | 2011-12-08 |
20110297935 | SEMICONDUCTOR DEVICE WITH APPRAISAL CIRCUITRY - A semiconductor device comprises a substrate provided with a doping of a first type, on which an electronic circuit is provided surrounded by a circuit portion of the substrate provided with a doping of a second type; at least one pad for connecting the electronic circuit to an external device outside the substrate, surrounded by a pad portion provided with a doping of the second type; a sensing device comprising a sensor portion of the substrate provided with a doping of the first type, for sensing a parameter forming a measure for a local electrical potential of the substrate; and an evaluation unit connected to the sensing device, for providing an evaluation signal based on a difference between the parameter and a reference value. | 2011-12-08 |
20110297936 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device | 2011-12-08 |
20110297937 | THIN FILM TRANSISTOR WITH OFFSET STRUCTURE - A thin film transistor (TFT) having an offset structure is disclosed. The TFT maintains a sufficiently low “off” current and a sufficiently high “on” current. The TFT includes an active region. The active region includes a gate electrode; an active layer that overlaps with the gate electrode; a gate insulating layer between the gate electrode and the active layer; and a source/drain electrode layer including source/drain electrodes that are electrically connected to the active region. Some of the source/drain electrodes overlap partially with the gate electrode. Other of the source/drain electrodes are offset from the gate electrode. The source/drain electrodes and the gate electrode are in a symmetrical arrangement. | 2011-12-08 |
20110297938 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern. | 2011-12-08 |
20110297939 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure with a high degree of integration. A semiconductor device includes a semiconductor layer having a channel formation region, a source electrode and a drain electrode electrically connected to the channel formation region, a gate electrode overlapping with the channel formation region, and a gate insulating layer between the channel formation region and the gate electrode. A portion of a side surface of the gate insulating layer and a portion of a side surface of the source electrode or the drain electrode are substantially aligned with each other when seen from a planar direction. | 2011-12-08 |
20110297940 | MICROMACHINE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced. | 2011-12-08 |
20110297941 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes. | 2011-12-08 |
20110297942 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a lower substrate including a display area and a non-display area, the lower substrate further including a power supply wiring unit disposed in the non-display area, the power supply wiring unit including at least one power supply wiring extending along an edge of the display area; an encapsulation substrate having an outer surface and an inner surface facing the lower substrate; a cavity formed into the inner surface of the encapsulation substrate in a region over the power supply wiring unit such that the cavity overlaps at least part of the power supply wiring when viewed in a direction perpendicular to the outer surface of the encapsulation substrate; and a polarizing plate disposed on the outer surface of the encapsulation substrate. | 2011-12-08 |
20110297943 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including an insulating layer having an uneven portion formed in an emission area so as to reduce changes in color characteristics due to a viewing angle, and a method of manufacturing the same. The organic light-emitting display device includes: a substrate including an emission area and a circuit area including at least one thin film transistor (TFT); an insulating layer having a contact hole located at the circuit area, and including an uneven portion located at the emission area, the contact hole exposing the at least one TFT; a first electrode located on the uneven portion and coupled to the at least one TFT through the contact hole; an organic layer located on the first electrode; and a second electrode located on the organic layer. | 2011-12-08 |
20110297944 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus and a method of manufacturing the same are disclosed. The organic light-emitting display apparatus includes: an active layer formed on a substrate, a gate electrode including: a first gate electrode layer insulated from the active layer and including a semi-transmissive conductive material, a second gate electrode layer formed on the first gate electrode layer configured to protect the first gate electrode layer, a third gate electrode layer formed on the second gate electrode layer and including a transparent conductive material, and a fourth gate electrode layer formed on the third gate electrode layer and including a conductive material, a pixel electrode including: a first electrode layer formed in the same layer level as the first gate electrode layer and including a semi-transmissive conductive material, a second electrode layer formed on the first electrode layer configured to protect the first electrode layer, a third electrode layer formed on the second electrode layer and including a transparent conductive material, and a fourth electrode layer formed on the third electrode layer and including a conductive material, source and drain electrodes insulated from the gate electrode and electrically connected to the active layer and the pixel electrode, an intermediate layer formed on the pixel electrode and including an organic light-emitting layer, and an opposite electrode formed on the intermediate layer. | 2011-12-08 |
20110297945 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes. | 2011-12-08 |
20110297946 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate includes a gate line disposed on a substrate, the gate line comprising a gate electrode including a lower film and an upper film thicker than the lower film, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, an ohmic contact layer formed on the semiconductor layer, a data line electrically connected to a source electrode and a drain electrode formed on the ohmic contact layer, the lower film of the gate line is in contact with the gate insulating layer at a crossing portion of the gate line and the data line and the heights of the source electrode and the drain electrode are substantially the same as or less than a height of the semiconductor layer. | 2011-12-08 |
20110297947 | PIXEL STRUCTURE - A pixel structure having the following structure is provided. A light-shielding layer with a flat layer covering thereon is disposed on a substrate. A channel layer, a data line and a first pad are disposed on the flat layer. A source and a drain partially cover two sides of the channel layer. A gate dielectric layer with a gate, a scan line and a second pad disposed thereon covering the channel layer, the source and the data line exposes the drain and the first pad. A protection layer covering the gate and the scan line exposes the drain, the first and second pads. A patterned transparent conductive layer includes a pixel electrode disposed on the protection layer, a first retain portion disposed on the first pad and a second retain portion disposed on the second pad. | 2011-12-08 |
20110297948 | ORGANIC LIGHT-EMITTING DISPLAY - An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness. | 2011-12-08 |
20110297949 | Organic light emitting display and method of fabricating the same - An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst. | 2011-12-08 |
20110297950 | CRYSTALLINE SEMICONDUCTOR FILM MANUFACTURING METHOD, SUBSTRATE COATED WITH CRYSTALLINE SEMICONDUCTOR FILM, AND THIN-FILM TRANSISTOR - To provide a method of manufacturing a crystalline semiconductor film having a crystal structure with favorable in-plane uniformity. The method includes: irradiating an amorphous semiconductor film with a continuous-wave laser beam to increase a temperature of the amorphous semiconductor film to a range of 600° C. to 1100° C., the continuous-wave laser beam having a light intensity distribution continuously convex upward on each of major and minor axes; crystallizing the amorphous semiconductor film at the temperature increased to the range of 600° C. to 1100° C.; and increasing a crystal grain size of the crystallized amorphous semiconductor film, as a result of an increase in an in-plane temperature of the crystallized amorphous film to a range of 1100° C. to 1414° C. by latent heat released in the crystallizing of the amorphous semiconductor film. | 2011-12-08 |
20110297951 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern. | 2011-12-08 |
20110297952 | THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm. | 2011-12-08 |
20110297953 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An exemplary light emitting diode includes a conductive base, an LED die, a transparent conductive layer and at least one pad. The LED die includes a p-type GaN layer connected to the base, an active layer on the p-type GaN layer, and an n-type GaN layer on the active layer. The transparent conductive layer is coated on an exposed side of the n-type GaN layer. The exposed side has an arched central portion, which in one embodiment is concave and in another embodiment is convex. The at least one n-side pad is mounted on the transparent conductive layer. The at least one n-side pad and the conductive base are for connecting with a power source. | 2011-12-08 |
20110297954 | SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved. | 2011-12-08 |
20110297955 | Semiconductor Light Emitting Diode - A highly-efficient semiconductor light emitting diode with improved light extraction efficiency comprising at least a substrate having a plurality of crystal planes, a first conductivity-type barrier layer, an active layer serving as a light emitting layer and a second conductivity-type barrier layer stacked on the substrate. The semiconductor light emitting diode comprises a ridge structure configured from one flat surface and at least two inclining surfaces in the in-plane direction. The width (W) of the flat surface of the ridge structure is 2λ (λ: light emission wavelength) or less. The active layer is positioned in the laminating direction so that the shortest length (L) between two points is λ (light emission wavelength) or less, wherewith the first point is the shortest point where the light emitted from the center (C) of the active layer begins total internal reflection at the interface between the inclining surfaces of the ridge structure and air, and the second point is a point where the flat surface begins. | 2011-12-08 |
20110297956 | METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an In | 2011-12-08 |
20110297957 | COMPOUND SEMINCONDUCTOR STRUCTURE - A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 52 cm to 1×10 | 2011-12-08 |
20110297958 | Gate after Diamond Transistor - A gate after diamond transistor and method of making comprising the steps of depositing a first dielectric layer on a semiconductor substrate, depositing a diamond particle nucleation layer on the first dielectric layer, growing a diamond thin film layer on the first dielectric layer, defining an opening for the gate in the diamond thin film layer, patterning of the diamond thin film layer for a gate metal to first dielectric layer surface, etching the first dielectric layer, depositing and defining a gate metal, and forming a contact window opening in the diamond thin film layer and the first dielectric layer to the ohmic contact. | 2011-12-08 |
20110297959 | CHAMFERED FREESTANDING NITRIDE SEMICONDUCTOR WAFER AND METHOD OF CHAMFERING NITRIDE SEMICONDUCTOR WAFER - Technology of making freestanding gallium nitride (GaN) wafers has been matured at length. Gallium nitride is rigid but fragile. Chamfering of a periphery of a GaN wafer is difficult. At present edges are chamfered by a rotary whetstone of gross granules with weak pressure. Minimum roughness of the chamfered edges is still about Ra 10 μm to Ra 6 μm. The large edge roughness causes scratches, cracks, splits or breaks in transferring process or wafer process. A wafer of the present invention is bevelled by fixing the wafer to a chuck of a rotor, bringing an edge of the wafer into contact with an elastic whetting material having a soft matrix and granules implanted on the soft matrix, rotating the wafer and feeding the whetting material. Favorably, several times of chamfering edges by changing the whetting materials of smaller granules are given to the wafer. The chamfering can realize small roughness of Ra 10 nm and Ra 5 μm at edges of wafers. | 2011-12-08 |
20110297960 | TRANSISTOR ASSEMBLY AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a transistor assembly includes the steps of: (a) forming a transistor; (b) polishing a base substrate; and (c) securing the transistor of which the base substrate is polished to a support substrate. The step (a) is a step of forming a first semiconductor layer and a second semiconductor layer on a principle surface of the base substrate. The step (b) is a step of polishing a surface of the base substrate opposite to the principle surface. The step (c) is a step of securing the transistor on the support substrate in the presence of a stress applied on the base substrate in such a direction that a warp of the base substrate is reduced. The base substrate is made of a material different from that of the first semiconductor layer and the second semiconductor layer, and a tensile stress is applied on the second semiconductor layer. | 2011-12-08 |
20110297961 | FIELD EFFECT POWER TRANSISTORS - A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate. | 2011-12-08 |
20110297962 | SCHOTTKY DIODE WITH DIAMOND ROD AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same. | 2011-12-08 |
20110297963 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 | 2011-12-08 |
20110297964 | AC SWITCH - An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor MOSFET. The withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V. The resistance between the first output terminal and the second output terminal in an on state is not more than 20 mΩ. | 2011-12-08 |
20110297965 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface. | 2011-12-08 |
20110297966 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure. | 2011-12-08 |
20110297967 | SEMICONDUCTOR LIGHT-RECEIVING ELEMENT AND OPTICAL MODULE - A semiconductor light-detecting element includes: a semiconductor substrate of a first conductivity type having a band gap energy, a first principal surface, and a second principal surface opposed to the first principal surface; a first semiconductor layer of the first conductivity type on the first principal surface and having a band gap energy smaller than the band gap energy of the semiconductor substrate; a second semiconductor layer of the first conductivity type on the first semiconductor layer; an area of a second conductivity type on a part of the second semiconductor layer; a first electrode connected to the second semiconductor layer; a second electrode connected to the area; and a low-reflection film on the second principal surface. The second principal surface is a light-detecting surface detecting incident light, and no substance or structure having a higher reflection factor, with respect to the incident light, than the low-reflection film, is located on the second principal surface. | 2011-12-08 |
20110297968 | Rod-shaped semiconductor device - A rod-shaped semiconductor device having a light-receiving or light-emitting function is equipped with a rod-shaped substrate made of p-type or n-type semiconductor crystal, a separate conductive layer which is formed on a part of the surface of the substrate excluding a band-shaped part parallel to the axis of the substrate and has a different conduction type from the conduction type of the substrate, a pn-junction formed with the substrate and separate conductive layer, a band-shaped first electrode which is formed on the surface of the band-shaped part on the substrate and ohmic-connected to the substrate, and a band-shaped second electrode which is formed on the opposite side of the first electrode across the shaft of said substrate and ohmic-connected to the separate conductive layer. | 2011-12-08 |
20110297969 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle. | 2011-12-08 |
20110297970 | INTEGRALLY FORMED SINGLE PIECE LIGHT EMITTING DIODE LIGHT WIRE AND USES THEREOF - An integrally formed single piece light emitting diode (LED) light wire that provides a smooth, uniform lighting effect from all directions of the LED light wire. The integrally formed single piece LED light wire includes a support substrate, a conductive base formed on the support substrate, the conductive bus comprising a plurality of conductive bus elements, at least one conductive segment arranged between the plurality of conductive bus elements, the at least one conductive segment comprising at least one LED. The integrally formed single piece LED light wire may include built-in sensors/detectors and/or a plurality of LED modules with individually controlled LEDs via microprocessors. The integrally formed single piece LED light wire may also include an interlocking alignment system which permits the coupling of at least two LED light wires. Further, a plurality of the integrally formed single piece LED light wires may create a lighting panel. | 2011-12-08 |
20110297971 | LED LIGHTING DEVICE - An LED lighting device A | 2011-12-08 |
20110297972 | LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME - A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer. | 2011-12-08 |
20110297973 | LED WITH AN ADSORPTION PLATE - The present invention relates to an LED with an adsorption plate attached thereto, and more particularly, to an LED which is covered with a light transmitter made of a light-transmitting material to prevent light scattering and to restrict the light radiation range to the size of the light transmitter. The light transmitter has a thin film light-transmitting portion and a thick film light-transmitting portion to improve visibility at a short distance and at a long distance, and from the front and the side. Further, a user may freely combine LEDs with adsorption plates attached thereto to express words or sentences for advertisements, and may also easily change the words or sentences. | 2011-12-08 |
20110297974 | LED ASSEMBLY WITH COLOR TEMPERATURE CORRECTION CAPABILITY - An illumination assembly is provided which is capable of correcting a color temperature. The assembly includes a substrate with a plurality of coatings applied on a respective plurality of surface portions of a base material. A light emitting device includes one or more light emitting elements of a first color temperature mounted on surface portions of the substrate having a first color coating, and one or more light emitting elements having a second color temperature mounted on surface portions of the substrate having a second color coating. Light emitting elements are individually sealed with a resin containing an excitable phosphor, with a reflectance factor of the first color coating and a reflectance factor of the second color coating set corresponding to light emitted from the light emitting elements having the first and second color temperatures, respectively, with respect to a desired color temperature for the light emitting device. | 2011-12-08 |
20110297975 | LIGHT-EMITTING UNIT ARRAY - A light-emitting unit array includes a plurality of light-emitting units arranged and integrated monolithically in an array, and each of the light-emitting units includes a first doped type layer, a second doped type layer, a light-emission layer, and a photonic crystal structure. The light emission layer is disposed between the first doped type layer and the second doped type layer, wherein the second doped type layer has a surface facing away from the light emission layer. The photonic crystal structure is disposed on the surface of the second doped type layer. | 2011-12-08 |
20110297976 | Illumination Module - An illumination module including a substrate and a plurality of first and second LED chips is provided. The substrate has a plurality of device bonding areas, and each of device bonding areas has two sub-device bonding areas. Each sub-device bonding area has a first, second, and common route. The first routes surround the outer peripheries of each device bonding area. The second routes are located between the two sub-device bonding areas. The common routes are located between the first and second routes. The first LED chips located at the common routes are electrically connected to each other. The second LED chips located at the first and second routes respectly are electrically connected to each other. | 2011-12-08 |
20110297977 | DISPLAY DEVICE - A display device includes a first organic electroluminescent element and a second organic electroluminescent element. The first and second organic electroluminescent elements have different luminescent colors. The first and second organic electroluminescent elements each include, in series, a first electrode, a first charge transport layer, a second charge transport layer, a light-emitting layer, and a second electrode. The first charge transport layer is common to the first and second organic electroluminescent elements. The second charge transport layer of the first organic electroluminescent element is different in thickness from the second charge transport layer of the second organic electroluminescent element. The concentration of a dopant material contained in the first charge transport layer is less than that of the second charge transport layer. | 2011-12-08 |
20110297978 | LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP - The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, wherein | 2011-12-08 |