49th week of 2011 patent applcation highlights part 42 |
Patent application number | Title | Published |
20110300679 | PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - A process of forming an electronic device can include providing a workpiece comprising a substrate, including an underlying doped region, and a semiconductor portion overlying the underlying doped region, wherein the semiconductor portion has a primary surface spaced apart from the underlying doped region. The process can further include forming a vertically-oriented conductive region extending from the primary surface towards the underlying doped region, forming a horizontally-oriented doped region adjacent to the primary surface, and forming a conductive electrode over, spaced-apart from, and electrically insulated from the vertically-oriented doped region. The process can still further include forming a gate electrode after forming the conductive electrode. The electronic device can include a transistor that includes the underlying doped region, the vertically-oriented conductive region, the horizontally-oriented doped region, and the gate electrode. | 2011-12-08 |
20110300680 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND DEPLETION-TYPE MOS TRANSISTOR - A peripheral circuit includes at least a first transistor. The first transistor comprises a gate electrode formed on a surface of a semiconductor layer via agate insulating film. A channel region of a first conductivity type having a first impurity concentration is formed on a surface of the semiconductor layer directly below and in the vicinity of the gate electrode. | 2011-12-08 |
20110300681 | RAISED SOURCE/DRAIN WITH SUPER STEEP RETROGRADE CHANNEL - Systems and methods for raised source/drain with super steep retrograde channel are described. In accordance with a first embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art. | 2011-12-08 |
20110300682 | CHARGE TRAPPING DEVICES WITH FIELD DISTRIBUTION LAYER OVER TUNNELING BARRIER - A memory cell comprising: a semiconductor substrate with a surface with a source region and a drain region disposed below the surface of the substrate and separated by a channel region; a tunneling barrier dielectric structure with an effective oxide thickness of greater than 3 nanometers disposed above the channel region; a conductive layer disposed above the tunneling barrier dielectric structure and above the channel region; a charge trapping structure disposed above the conductive layer and above the channel region; a top dielectric structure disposed above the charge trapping structure and above the channel region; and a top conductive layer disposed above the top dielectric structure and above the channel region are described along with devices thereof and methods for manufacturing. | 2011-12-08 |
20110300683 | Semiconductor device and method of forming the same - A semiconductor device and a method of forming the same are provided. The method includes preparing a semiconductor substrate. Insulating layers may be sequentially formed on the semiconductor substrate. Active elements may be formed between the insulating layers. A common node may be formed in the insulating layers to be electrically connected to the active elements. The common node and the active elements may be 2-dimensionally and repeatedly arranged on the semiconductor substrate. | 2011-12-08 |
20110300684 | METHOD FABRICATING PHASE-CHANGE SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole. | 2011-12-08 |
20110300685 | METHODS FOR FABRICATING PHASE CHANGE MEMORY DEVICES - Provided is a method for fabricating a phase change memory device. The method includes forming a plurality of bottom electrodes on a substrate, forming a first mold layer on the substrate to extend in a first direction where the bottom electrodes are exposed, forming a second mold layer on the substrate, the second mold layer extending in a second direction orthogonal to the first direction to expose parts of the bottom electrodes, forming a phase change material layer on the first and second mold layers to be connected to parts of the bottom electrodes dividing the phase change material layer as a plurality of phase change layers respectively connected to the parts of the bottom electrodes and forming a plurality of top electrodes on the phase change layers. | 2011-12-08 |
20110300686 | Methods of Fabricating Non-Volatile Memory Devices - Methods of forming non-volatile memory devices include forming a semiconductor layer having a first impurity region of first conductivity type extending adjacent a first side thereof and a second impurity region of second conductivity type extending adjacent a second side thereof, on a substrate. A first electrically conductive layer is also provided, which is electrically coupled to the first impurity region. The semiconductor layer is converted into a plurality of semiconductor diodes having respective first terminals electrically coupled to the first electrically conductive layer. The first electrically conductive layer operates as a word line or bit line of the non-volatile memory device. The converting may include patterning the first impurity region into a plurality of cathodes or anodes of the plurality of semiconductor diodes (e.g., P-i-N diodes). | 2011-12-08 |
20110300687 | NANO-DIMENSIONAL NON-VOLATILE MEMORY CELLS - A non-volatile memory cell that includes a first electrode; a second electrode; and an electrical contact region that electrically connects the first electrode and the second electrode, the electrical contact region has a end portion and a continuous side portion, and together, the end portion and the continuous side portion form an open cavity, wherein the memory cell has a high resistance state and a low resistance state that can be switched by applying a voltage across the first electrode and the second electrode. | 2011-12-08 |
20110300688 | METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AND FOR PLANARIZING AN ETCHED SURFACE OF SILICON SUBSTRATE - A method for forming a gate, which can improve the etching uniformity of the sidewalls of the gate, includes the following steps: forming a dielectric layer on a semiconductor substrate; forming a polysilicon layer on the dielectric layer; etching the polysilicon layer; performing an isotropic plasma etching process on the etched polysilicon layer by using a mixed gases containing a fluorine-based gas and oxygen gas; and cleaning the semiconductor substrate subjected to the isotropic plasma etching process, thereby forming a gate. The present invention further provides a method for forming a shallow trench isolation region, which can improve the filling quality of a subsequent spacer and the electrical properties of the resultant shallow trench isolation region, and a method for planarizing an etched surface of silicon substrate, which can improve the etching uniformity of the surface of silicon substrate. | 2011-12-08 |
20110300689 | Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry - First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench. | 2011-12-08 |
20110300690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 2011-12-08 |
20110300691 | WORKPIECE CUTTING METHOD - Fractures ( | 2011-12-08 |
20110300692 | METHOD FOR DIVIDING A SEMICONDUCTOR FILM FORMED ON A SUBSTRATE INTO PLURAL REGIONS BY MULTIPLE LASER BEAM IRRADIATION - The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Said arrangement comprises a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and it comprises a second laser for said final laser beam treatment. | 2011-12-08 |
20110300693 | Semiconductor Devices - Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the first isolation dielectric pattern. A semiconductor pattern is interposed between the semiconductor substrate and the first isolation dielectric pattern, and a second isolation dielectric pattern is interposed between the semiconductor substrate and the semiconductor pattern. The semiconductor substrate and the semiconductor pattern are electrically connected by a connection pattern. | 2011-12-08 |
20110300694 | ELECTRODE CIRCUIT, FILM FORMATION DEVICE, ELECTRODE UNIT, AND FILM FORMATION METHOD - An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit. | 2011-12-08 |
20110300695 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes the steps of loading a substrate into a processing chamber; processing the substrate by supplying plural kinds of reaction substances into the processing chamber multiple number of times; and unloading the processed substrate from the processing chamber, wherein at least one of the plural kinds of reaction substances contains a source gas obtained by vaporizing a liquid source by a vaporizing part; in the step of processing the substrate, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than performing the vaporizing operation of the liquid source, a solvent capable of dissolving the liquid source is flowed to the vaporizing part at a first flow rate; and at a time other than performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate. | 2011-12-08 |
20110300696 | METHOD FOR DAMAGE-FREE JUNCTION FORMATION - Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or another noble gas, is implanted into a workpiece to a first depth. A dopant is deposited on a surface of the workpiece. During an anneal, the dopant diffuses to the first depth. The noble gas ions may at least partially amorphize the workpiece during the implant. The workpiece may be planar or non-planar. The implant and deposition may occur in a system without breaking vacuum. | 2011-12-08 |
20110300697 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask on a surface of a semiconductor substrate, applying a dopant diffusing agent containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate at a spacing from the diffusion preventing mask, and forming a dopant diffusion layer by diffusing the dopant from the dopant diffusing agent into the semiconductor substrate. | 2011-12-08 |
20110300698 | METHODS FOR FORMING A GATE AND A SHALLOW TRENCH ISOLATION REGION AND FOR PLANARIZING AN ETCHED SURFACE OF SILICON SUBSTRATE - A method for forming a gate, which can improve the etching uniformity of the sidewalls of the gate, includes the following steps: forming a dielectric layer on a semiconductor substrate; forming a polysilicon layer on the dielectric layer; etching the polysilicon layer; performing an isotropic plasma etching process on the etched polysilicon layer by using a mixed gases containing a fluorine-based gas and oxygen gas; and cleaning the semiconductor substrate subjected to the isotropic plasma etching process, thereby forming a gate. The present invention further provides a method for forming a shallow trench isolation region, which can improve the filling quality of a subsequent spacer and the electrical properties of the resultant shallow trench isolation region, and a method for planarizing an etched surface of silicon substrate, which can improve the etching uniformity of the surface of silicon substrate. | 2011-12-08 |
20110300699 | FABRICATION OF A MEMORY WITH TWO SELF-ALIGNED INDEPENDENT GATES - A method for making a micro-electronic non-volatile memory device provided with transistors having gates placed side by side, the method comprising the steps of:
| 2011-12-08 |
20110300700 | SEMICONDUCTOR DEVICE HAVING A HIGH ASPECT RATIO ISOLATION TRENCH AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first insulation layer, and a second insulation layer. The semiconductor substrate has a second trench that is wider than a first trench. The first insulation layer is partially formed within the wider second trench in which the first insulation layer when formed clogs the opening of the narrower first trench. A cleaning of the first insulation layer unclogs the opening of the narrower first trench in which a second insulation layer can then be formed within both the first and second trenches. | 2011-12-08 |
20110300701 | APPARATUS HAVING A DIELECTRIC CONTAINING SCANDIUM AND GADOLINIUM - Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, a monolayer or partial monolayer sequence process, such as for example atomic layer deposition (ALD), can be used to form a dielectric containing gadolinium oxide and scandium oxide. In an embodiment, a dielectric structure can be formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form a thin laminate structure. A dielectric containing scandium and gadolinium may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, as a NROM dielectric, or as a dielectric in other electronic devices, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film. | 2011-12-08 |
20110300702 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - An insulating film is formed on a semiconductor substrate. A metal sacrificial film is formed on the insulating film. Then, the sacrificial film is selectively etched to form a trench pattern in the sacrificial film. The insulating film is irradiated with ultraviolet light or an electron beam using the sacrificial film having the trench pattern as a mask. After that, an interconnect formation groove is formed in the insulating film using the sacrificial film having the trench pattern as a mask. A metal film is formed in the interconnect formation groove. | 2011-12-08 |
20110300703 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - This semiconductor memory device comprises a semiconductor substrate, a plurality of tunnel insulator films formed on the semiconductor substrate along a first direction and a second direction orthogonal to the first direction with certain spaces in each directions, a plurality of charge accumulation layers formed on the plurality of tunnel insulator films, respectively, a plurality of element isolation regions formed on the semiconductor substrate, the plurality of element isolation regions including a plurality of trenches formed along the first direction between the plurality of tunnel insulator films, a plurality of element isolation films filled in the plurality of trenches, a plurality of inter poly insulator films formed over the plurality of element isolation regions and on the upper surface and side surfaces of the plurality of charge accumulation layer along the second direction in a stripe shape, a plurality of air gaps formed between the plurality of element isolation films filled in the plurality of trenches and the plurality of inter poly insulator films and a plurality of control gate electrodes formed on the plurality of inter poly insulator films. | 2011-12-08 |
20110300704 | SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS WITH STRESS BUFFER SPACERS AND METHODS OF FABRICATING THE SAME - A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate. | 2011-12-08 |
20110300705 | MANUFACTURING METHOD OF BUMP STRUCTURE WITH ANNULAR SUPPORT - A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers. | 2011-12-08 |
20110300706 | METHOD FOR FABRICATING INTERCONNECTION STRUCTURE - A method for fabricating an interconnection structure includes the following steps. Firstly, a substrate having a first conductive layer thereon is provided. Next, an ultra low-k material layer is formed on the substrate. Next, a portion of the ultra low-k material layer is removed, so as to form an opening to expose the first conductive layer. Next, a dry-cleaning process is performed by using gas, so as to clean a surface of the first conductive layer exposed by the opening. The dry-cleaning process is performed at a temperature in a range from the room temperature to 100° C. | 2011-12-08 |
20110300707 | Metallization and Its Use In, In Particular, an IGBT or a Diode - A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 μm and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer. | 2011-12-08 |
20110300708 | THROUGH-SILICON VIA STRUCTURE AND METHOD FOR MAKING THE SAME - A through-silicon via structure includes a substrate with a first side and a second side, a through-silicon hole connecting the first side and the second side and filled with a conductive material, a passivation layer disposed on and contacting the first side and covering the through-silicon hole, and a protection ring surrounding but not contacting the through-silicon hole and exposed by the first side and the second side. The protection ring is filled with an insulating material. | 2011-12-08 |
20110300709 | METHOD OF SEMICONDUCTOR WAFER BACK PROCESSING, METHOD OF SUBSTRATE BACK PROCESSING, AND RADIATION-CURABLE PRESSURE-SENSITIVE ADHESIVE SHEET - The present invention relates to a method of semiconductor wafer back processing, which includes applying a radiation-curable pressure-sensitive adhesive sheet comprising a base film and a pressure-sensitive adhesive layer disposed on one side of the base film to a front side of a semiconductor wafer, the front side of the semiconductor wafer having recesses and protrusions; grinding the back side of the semiconductor wafer in such a state that the radiation-curable pressure-sensitive adhesive sheet is adherent to the front side of the semiconductor; and irradiating the pressure-sensitive adhesive sheet with a radiation to thereby cure the pressure-sensitive adhesive layer, followed by subjecting said ground back side of the semiconductor wafer to a surface treatment; and a radiation-curable pressure-sensitive adhesive sheet for use in the method of semiconductor wafer back processing. | 2011-12-08 |
20110300710 | Method for Forming Through-Base Wafer Vias for Fabrication of Stacked Devices - An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components. | 2011-12-08 |
20110300711 | METHOD AND SYSTEM FOR PATTERNING A SUBSTRATE - A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch. | 2011-12-08 |
20110300712 | Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns - Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone. | 2011-12-08 |
20110300713 | OVERLAY VERNIER KEY AND METHOD FOR FABRICATING THE SAME - Methods are disclosed for fabricating an overlay vernier key. A method includes forming a pattern layer and an insulating layer over a semiconductor substrate. The insulating layer is etched to form insulating layer patterns to partially expose the pattern layer. Spacers are formed on sidewalls of the insulating layer patterns. The insulating layer patterns are removed while leaving the spacers to obtain a spacer-shaped etch mask. The pattern layer is etched using the spacer-shaped etch mask to form vernier patterns. At least one of the vernier patterns has a hollow shape. | 2011-12-08 |
20110300714 | PLASMA PROCESSING CHAMBER COMPONENT HAVING ADAPTIVE THERMAL CONDUCTOR - An assembly comprises a component of a plasma process chamber, a thermal source and a polymer composite therebetween exhibiting a phase transition between a high-thermal conductivity phase and a low-thermal conductivity phase. The temperature-induced phase change polymer can be used to maintain the temperature of the component at a high or low temperature during multi-step plasma etching processes. | 2011-12-08 |
20110300715 | INTEGRATED METHOD AND SYSTEM FOR MANUFACTURING MONOLITHIC PANELS OF CRYSTALLINE SOLAR CELLS - A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. | 2011-12-08 |
20110300716 | METHOD OF IMPROVING FILM NON-UNIFORMITY AND THROUGHPUT - Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, a volume, and an isolation valve between the volume and the showerhead. A gas is delivered the volume when the isolation valve is closed, pressurizing the volume. The isolation valve is opened to allow the gas to flow to the showerhead when the gas is being delivered to the volume. A material is formed on the wafer substrate using the gas. In some implementations, releasing the pressurized gas from the volume reduces the duration of time to develop a spatially uniform gas flow across the showerhead. | 2011-12-08 |
20110300717 | METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS - Embodiments of the invention describe methods for forming fluorocarbon (CF) films for semiconductor devices. According to one embodiment, the method includes providing a substrate, depositing a CF film on the substrate, generating, in the absence of a plasma, a treatment gas containing a gaseous specie having a molecular dipole, and treating the CF film with the treatment gas containing the gaseous specie having the molecular dipole to reduce the number of dangling bonds in the CF film. According to some embodiments, the method further includes depositing a second CF film on the treated CF film. According to some embodiments, the CF films may be deposited using a microwave plasma source containing a radial line slot antenna (RLSA). | 2011-12-08 |
20110300718 | ON-WAFER CRYSTALLIZATION FOR PURE-SILICA-ZEOLITE ULTRA LOW-K FILMS - An on-wafer crystallization method of spin-coating a silicon wafer with a low-k dielectric zeolite material which includes the steps of forming a synthesis solution; generating a nucleated precursor solution; spin-coating the nucleated precursor onto a substrate as a precursor film; and annealing the precursor film into a zeolite film. | 2011-12-08 |
20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 2011-12-08 |
20110300720 | Plasma treatment of substrates prior to deposition - A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen. | 2011-12-08 |
20110300721 | Methods of Making Crystalline Tantalum Pentoxide - There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content. | 2011-12-08 |
20110300722 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device comprises a reaction vessel | 2011-12-08 |
20110300723 | CONDUCTOR LINE, COLLECTOR AND CONDUCTOR SYSTEM - The invention relates to: a conductor line ( | 2011-12-08 |
20110300724 | EXTENDED USB PLUG, USB PCBA, AND USB FLASH DRIVE WITH DUAL-PERSONALITY FOR EMBEDDED APPLICATION WITH MOTHER BOARDS - An extended universal serial bus (USB) storage device is described herein. According to one embodiment, an extended USB storage device includes a printed circuit board assembly (PCBA) having a flash memory device and a flash controller mounted thereon, and an extended USB connector plug coupled to the PCBA for providing a USB compatible interface between an external device and the flash memory device and the flash controller, wherein the extended USB connector plug includes a first end used to couple to the external device and a second end coupled to the flash memory device and the flash controller. The extended USB connector plug includes multiple communication interfaces. Other methods and apparatuses are also described. | 2011-12-08 |
20110300725 | Busbar Electrical Power Connector - A dual pole busbar power connector including opposing elements configured to form a slot configured to receive a dual-pole blade therebetween. The slot extends from busbars to opposing element distal ends. The opposing elements each includes: a first contact extending into the slot from the opposing element; and a second contact extending into the slot from the opposing element and disposed farther from a slot busbar end than the first contact. When the dual-pole blade is inserted in the slot the first contact contacts a respective blade element at a location in the slot more proximate the slot busbar end than a slot distal end. | 2011-12-08 |
20110300726 | Connectors for electrically active grid - The invention includes an electrified framework system having a plurality of grid members which form a grid framework. A conductive material is disposed on a surface of at least one of the plurality of grid members as shown throughout the drawings. The system includes connectors which provide low voltage power connections. For example, the connectors bring power from a power supply to the conductive material disposed on the grid framework and/or the connectors provide electrical connections between the conductive material on the grid framework and various devices. | 2011-12-08 |
20110300727 | CONNECTION RECEPTACLE LOCK AND SECURITY STRUCTURE - A lock and security structure is provided for a connection receptacle and includes a connection port, a pawl portion, and a lock and security portion. The connection port forms a receiving space and a slide channel defined in a surface of the receiving space. The pawl portion includes at least one fixed end and the pawl portion is located adjacent to an end surface of the connection port. The pawl portion forms at least one barb. The lock and security portion includes a bar portion and a board portion. The bar portion is formed on one end of the board portion. The lock and security portion is movable along the slide channel in an extension direction of the slide channel. When the lock and security portion is moved to a first position, the bar portion engages the pawl portion. When the lock and security portion is moved to a second position, the bar portion disengages from the pawl portion. | 2011-12-08 |
20110300728 | LOCKING DEVICE - A locking device that locks a power feeding plug to a power receiving connector and locks a lid covering the power receiving connector. The locking device includes a lock bar that locks a hook, which is arranged on the power feeding plug, to a catch, which is arranged on the power receiving connector. A hook restriction member permits and restricts movement of the lock bar. A lid restriction member permits and restricts opening of the lid. A motor moves the hook and lid restriction members. | 2011-12-08 |
20110300729 | Outlet Cover - An electrical outlet safety cap is easily removed from an electrical outlet by adults but not by children. The safety cap comprises a disk, prong or prongs, and at least one keyhole. The prongs extend outwardly from the rear surface of the disk. When in place, the prongs are secured tightly in the contact holes to prevent removal by children. The rear surface of the disk has one or more keyholes. To remove the safety cap, the prong of a second safety cap is slid into the keyhole of a first safety cap that is in use. The second safety cap is pulled outward, away from the electrical outlet, removing the prongs of the first safety cap from the contact holes to free the first safety cap from the electrical outlet. | 2011-12-08 |
20110300730 | WATERPROOF STRUCTURE FOR A CABLE CONNECTOR, AND A PLUG CONNECTOR, SOCKET CONNECTOR AND CABLE CONNECTOR UTILIZING THE SAME - In the case where the cable CA is passed through the hole of the sealing tube and connected to the plug contact terminal and the socket contact terminal, when the female threaded portions and of the stepped pressure nut members and are respectively screwed onto the male threaded portions and of the plug housing and the socket housing, the outer periphery of the cable CA inside the plug housing and the socket housing is sealed by way of the pressing pieces and the sealing tube being pressed. | 2011-12-08 |
20110300731 | WATERPROOF CONNECTOR - A waterproof connector has a first housing and a seal member. The first housing has an accommodation chamber which accommodates a terminal attached to an electric wire and a rear wall which defines part of the accommodation changer and has an insertion hole. The seal member has a terminal hole into which the terminal is inserted, is formed integrally with the first housing and is formed of an elastic material so as to be secured tight to an outer circumference of the electric wire. | 2011-12-08 |
20110300732 | PLUG-TYPE CONNECTOR - The invention relates to a plug-type connector with a cable, which has at least one line, a contact carrier, which has at least one contact element, which is connected to the at least one line of the cable, and an encapsulation, which is injected around the cable and the contact carrier, wherein a sealing element for sealing the encapsulation off from the outer sheath of the cable is provided. | 2011-12-08 |
20110300733 | METHOD AND SYSTEM FOR PREVENTING DISENGAGEMENT BETWEEN AN ELECTRICAL PLUG AND A CHARGE PORT ON AN ELECTRIC VEHICLE - A system and method is provided for preventing disengagement between an electrical plug and a charge port on an electric vehicle. One or more projections are disposed on the electric vehicle. The projection has an extended locked position and a retracted unlocked position. An actuator selectively extends and retracts the projection between the locked and unlocked positions. When the projection is in the locked position, the projection engages the plug and prevents disengagement of the plug and the port. | 2011-12-08 |
20110300734 | CARD EDGE CONNECTOR - A card edge connector includes an elongated housing having an upper face, a lower face and a mating groove defined therebetween and extending along a longitudinal direction. A plurality of terminal grooves are respectively defined between the upper face and lower face and in communication with the mating groove. A plurality of contacts are respectively received in the terminal grooves. Each contact includes a body portion, at least one retaining portion, a contacting portion and a soldering portion. The at least one retaining portion forms at least one barb thereon and is inserted into the terminal groove with the at least one barb interfering with an inner wall of the terminal groove until the at least one barb falls into a through hole defined on the inner wall of the terminal groove. | 2011-12-08 |
20110300735 | ELECTRICAL CONNECTOR ASSEMBLY WTH LATCH MECHANISM EASILY OPERATED - An electrical connector assembly ( | 2011-12-08 |
20110300736 | LOCKING DEVICE FOR POWER FEEDING PLUG - A locking device that locks a power feeding plug to a power receiving connector, one of the power feeding plug and the power receiving connector including a hook, the other one of the power feeding plug and the power receiving connector including a catch, the locking device including a lock bar that is moved between a first lock position, at which it holds the hook on the catch and a first unlock position, at which it permits the hook to move away from the catch. A wire is moved between a second lock position, at which it is engaged with the lock bar and restricts movement of the lock bar to the first unlock position, and a second unlock position, at which it is disengaged from the lock bar and permits movement of the lock bar to the first unlock position. A motor is arranged at a position separated from the power receiving connector. A cam transmits the driving force of the motor to the wire. | 2011-12-08 |
20110300737 | CONTACTING PLUG AS WELL AS CONTACTING CONNECTION - A contacting plug for contacting a contact carrier having two, at least approximately parallel surface sides, in particular a circuit board, two clamping claws able to be pivoted relative to each other, transversely to a plug-in direction, at least one of which is implemented as contact holder carrying at least one flexible contact element, which contact holder is designed to rest on the contact carrier with a contact force, and a spring for generating a clamping force which is independent of the contact force. An arrangement for the automatic parallelization of the clamping claws are provided, especially of contact surfaces of the clamping claws, with the surface sides of the contact carrier. | 2011-12-08 |
20110300738 | ELECTRICAL CONNECTION ASSEMBLY - This electrical connection assembly includes a female element which includes at least one electrical contact, and a male electrical connection element intended to be inserted in the female element. The male element includes a plug and a sleeve that surrounds the plug and is mobile relative to the plug. At least one electrical contact is carried by the plug or the sleeve and is intended to be electrically connected to the electrical contact carried by the female element. An external radial surface of the sleeve includes at least two stages the diameters of which decrease in the direction toward a free end of the male element, and the female element including a body the internal radial surface of which includes at least two stages the diameters of which increase in the direction toward a mouth of the female element. According to the invention, the external surfaces of the stages of the sleeve are substantially complementary to the external surfaces of the stages of the internal surface of the body of the female element. Moreover, when the sleeve is fully inserted in the female element the stage of larger diameter of the male element is engaged in the stage of larger diameter of the female element and the stage of smaller diameter of the male element is engaged in the stage of smaller diameter of the female element. | 2011-12-08 |
20110300739 | Electric Connector and Method of Performing Electronic Connection - A modular jack assembly having a housing and a plug interface contact (PIC) sled subassembly insertable into the housing. The PIC sled subassembly provides an electrical and mechanical interface between PICs and a male-type plug receivable in an opening in the housing. The PIC sled subassembly is defined in part by multiple slots formed in the PIC sled subassembly that receive the PICs. The design of the PICs compensates for independent near-end cross-talk vectors and far-end cross-talk vectors to obtain a desired level of electrical characteristics. | 2011-12-08 |
20110300740 | ELECTRICAL PLUG CONNECTOR - An electrical plug connector comprises a connection module having a plurality of contact elements for establishing an electrical connection to corresponding contact elements of a socket connector, and a terminal module having a plurality of terminal elements, each for connecting a conductor of a cable. The terminal module is adapted to be detachably connected to the connection module in order to establish an electrical connection between each of the terminal elements and a contact element. The connection module comprises a housing into which the terminal module can be inserted, and a strain relief which is connected to the housing and engages over the terminal module, wherein a cable connected to the terminal module is adapted to be fixed to the connection module by means of the strain relief. | 2011-12-08 |
20110300741 | PHOTOVOLTAIC MODULE CONNECTOR ASSEMBLIES HAVING CABLE STRAIN RELIEF - An electrical connector assembly including a connector housing having a plurality of sides that define an inner region of the connector housing and include opposite loading and mating sides. The connector housing has a cable channel located in the inner region that extends between the loading and mating sides and a slot oriented substantially transverse to the cable channel. The slot extends through the cable channel. The connector assembly also includes a conductive cable that is received in the cable channel and extends along a central cable axis. The conductive cable has an outer surface and is configured to electrically engage the PV module. The connector assembly also includes a retaining member that is inserted into the slot. The retaining member surrounds the conductive cable about the cable axis and grips the outer surface of the conductive cable. | 2011-12-08 |
20110300742 | Connector Stabilizing Coupling Body Assembly - A stabilizing coupling body assembly for a coaxial connector is provided with a coupling body dimensioned to couple at a connector end of the coupling body with a cable end of the connector. A jacket grip of rigid material is retained between the coupling body and a stabilizing body coupled to a cable end of the coupling body. An outer diameter of the jacket grip abuts an annular wedge surface of the stabilizing body. The wedge surface is provided with a taper between a maximum diameter proximate a connector end of the jacket grip and a minimum diameter proximate a cable end of the annular wedge surface. The jacket grip is driven radially inward as the stabilizing body is advanced axially towards the coupling body. Methods of manufacture include forming elements of the coupling body assembly via injection molding. | 2011-12-08 |
20110300743 | ILLUMINATED ELECTRICAL CONNECTOR - An illuminated or self-illuminating electrical connector is provided that has an internal light source with, electrical circuitry for illuminating the light source. The housing arrangement of the illuminated electrical connector is such that light emanating from the light source is visible through the housing arrangement to the extent that the light is visible through greater than half of the external surface of the illuminated electrical connector. Also visible through the housing arrangement, when the light source is illuminated, is an electronic component that provides an aesthetic and ‘high-tech’ enhancement to the illuminated electrical connector. | 2011-12-08 |
20110300744 | E-Z RETRACTABLE CORD SYSTEM - A retractable extension power cord comprising: a plastic, circular (cylindrical) housing having at least a first and a second outlet; a spooler for holding power cord; a retractable power cord having a male end retractable out of a first outlet and a female end accessible out of a second outlet, a mounting bracket mountable onto a vertical or horizontal surface; and a ground fault circuit interrupter. The male end is directly connectable to a receptacle while the female end is directly or indirectly connectable to a power source. The retractable power cord communicates power between the male end and the female end The retractable extension power cord provide a means for neatly storing and organizing extension cords while also providing retracting and reverse-retracting capabilities during in-use and non-use periods. Further, the retractable extension cord is reversible and lockable. | 2011-12-08 |
20110300745 | TELECOMMUNICATIONS PATCH PANEL WITH ANGLED CONNECTOR MODULES - A telecommunications patch panel is provided having a plurality of connector modules rotatably mounted to a frame member. Each connector module has a front face and an opposite facing rear face, and each front face includes a plurality of connector jacks. Each rear face includes a plurality of wire termination blocks. The wire termination blocks are electrically connected to the connector jacks. Each connector module is rotatable about a rotation axis relative to the frame member. A lock selectively locks each connector module to the frame member as desired. The connector jacks and the connector modules are arranged in linear arrays perpendicular to the axis of rotation. | 2011-12-08 |
20110300746 | SOCKET - A socket includes a first relay board provided above a mounting board; a second relay board detachably provided above the first relay board; and a frame part provided at side parts of the first relay board and the second relay board, wherein the frame part is configured to hold the first relay board and the second relay board and detachably configured to hold an electronic device being mounted above the second relay board; and the first connecting part comes in contact with the first relay board and the second connecting part comes in contact with a pad of the electronic device, so that the electronic device and the mounting board are electrically connected to each other. | 2011-12-08 |
20110300747 | PHONE PLUG CONNECTOR DEVICE - A phone plug connector device having a preassembled phone plug and connector, wherein the phone plug includes a conductive tip and a stem, wherein the connector connects the phone plug to a coaxial cable, wherein the coaxial cable comprises a center conductor surrounded by a first dielectric, the first dielectric being surrounded by a first conductive sheath, and the first conductive sheath surrounded by a protective outer jacket, wherein the connector connects the coaxial cable to the phone plug mechanically and electrically by compression. | 2011-12-08 |
20110300748 | MINIATURE ELECTRICAL CONNECTOR - An electrical connector includes a cage, a body, positioned in the cage, and several terminals positioned on the body. The body has a front end and opposing rear end. The cage also has a front end and a rear end corresponding to the front and rear end of the body. The cage includes a top plate, a bottom plate and two lateral plates. A rear cover corresponding to the rear end of the body bend and extends from a rear end of the top plate of the cage. Two soldering pieces bend and extend from a bottom end of the rear cover toward the front end of the cage. | 2011-12-08 |
20110300749 | Plug Connector With External EMI Shielding Capability - A shielded cable connector takes the form of a plug connector that is terminated to a plurality of wires of a cable. The wires are terminated to an edge card and a premold portion is formed thereover. An exterior shielding braid of the cable is extended over the premold and is formed with the connector housing so that a portion of it is exposed on the exterior of the connector housing. This exposed portion contacts an exterior conductive collar that is supported on the connector housing. The sleeve has a plurality of spring contact arms so as to make electrical shielding contact between the cable braid exposed on the connector housing and an exterior metal guide into which the connector is inserted when mating to an opposing connector. | 2011-12-08 |
20110300750 | ELECTRICAL CONNECTOR AND METHOD OF CONNECTING TWISTED PAIR CABLE TO THE ELECTRICAL CONNECTOR - An electrical connector includes a connector main body made of an insulating material for attaching an end portion of a pair of single wires untwisted at an end portion of a twisted pair cable; and a shell member to hold the untwisted portion. The shell member includes a base portion made of a conductive material to dispose the connector main body at the front end side and the untwisted portion at the basal end side; a cable holding portion made of a conductive material to hold the single wires at the untwisted portion for positioning the single wires parallel to each other and close or contact to each other; and a cover portion provided on the base portion to have at least the untwisted portion and the cable holding portion between the cover portion and base portion. | 2011-12-08 |
20110300751 | AUDIO CONNECTOR CONTROL SYSTEM - An electronic device such as a portable music player, cellular telephone, or computer may be provided with an audio jack system that allows audio plug position measurements to be made. Sensors such as optical sensors, magnetic sensors, mechanical sensors, electrical sensors, resistive sensors, and capacitive sensors may be used in monitoring the position and movement of the audio plug relative to the audio jack. A user may rotate the audio plug to control operations such as media playback operations, menu selection operations, and other activities in the electronic device. The audio jack may include flexible structures that allow the audio plug to be tilted relative to the audio jack. Capacitive sensors or other sensors may be used to monitor audio plug tilt and axial audio plug movement. This allows the audio plug to serve as a joystick for the electronic device. | 2011-12-08 |
20110300752 | THUMB DRIVE CHASSIS STRUCTURE - A thumb drive with a miniaturized memory storage assembly package that employs an extended chassis structure to support the miniaturized memory device within an ergonomically designed casing that is also simple to manufacture. The miniaturized memory storage assembly has a flexible latch projection extending from its side that mates with a complimentary latch aperture in the side of the connector housing. Downwardly projecting tongues in the top surface of the connector housing also prevent movement of the assembly within the housing. The elongated platform chassis extending rearwardly from the USB connector housing snaps in place in an ergonomically designed thumb drive case. | 2011-12-08 |
20110300753 | PLUG CONVERSION ADAPTOR - A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit. | 2011-12-08 |
20110300754 | POWER CONNECTOR HAVING PROTECTIVE INTERIOR COVER - Circuits, methods, and apparatus that may provide protection from exposed wires or terminals when a power plug is damaged or destroyed. One example may provide a plug having an inner cover that shields power carrying wires or terminals when an outer shell is damaged or destroyed. The inner cover may include openings to receive conductors, where the openings may lead to terminals or wires that connect to plug prongs. The received conductors may attach directly or indirectly to an outer shell, and further to a power cord, circuitry, or other electronic components. When the outer shell is damaged or destroyed, the conductors may pull out of the openings in the inner cover, thus disconnecting from the wires or terminals. The wires or terminals may thus remain protected by the inner shell, avoiding exposure to contact by users or inadvertent conductors. | 2011-12-08 |
20110300755 | CABLE CONNECTING DEVICE ASSEMBLY AND MANUFACTURING METHOD THEREOF - The present invention relates to an improved cable connecting device assembly and a manufacturing method thereof, the improved cable connecting device assembly comprises: an electrical connector, a first circuit board, a second circuit board, at least one plugging member, at least one cable, a sheltering housing, and an outer housing, wherein the first circuit board and the second circuit board both having electronic circuits and electronic components are connected to the electrical connector, so as to facilitate the improved cable connecting device assembly possess not only the function of video signal transmission but more other functions; moreover, through the manufacturing method, the improved cable connecting device assembly is fabricated and has not only the function of video signal transmission but more other functions, besides, the whole thickness of the improved cable connecting device assembly is not increased. | 2011-12-08 |
20110300756 | WATERPROOF ELECTRICAL CONNECTOR - An electrical connector comprises: a lower insulative housing with several terminal slots each comprising a sink communicating to exterior; an upper insulative housing assembled on the lower insulative housing to define a receiving room for receiving an audio plug, the upper insulative housing comprising several terminal slots corresponding to those of the lower insulative housing and an extension plate extending toward the sink of the lower insulative housing; a number of terminals each comprising a main body, a resilient arm and a solder tail extending from the main body, the main bodies of the terminals retained in cooperating terminal slots of the lower and upper insulative housing inwardly of the sinks of the lower insulative housing and the extension plates of the upper insulative housing; and a fastening member combining the upper and lower insulative housings as an integrating unit. | 2011-12-08 |
20110300757 | RESONANCE MODIFYING CONNECTOR - A connector assembly is provided that is suitable for modifying the resonant frequency of ground terminals used in conjunction with high data rate signal terminals. Ground terminals may be interconnected with a conductive bridge so as to provide ground terminals with a predetermined maximum effective electrical length. Reducing the effective electrical length of the ground terminal can move the resonance frequencies of the connector outside the operational range of frequencies at which signals will be transmitted. | 2011-12-08 |
20110300758 | ELECTRICAL CONNECTOR HAVING IMPROVED CROSSTALK COMPENSATING PADDLE BOARD - An electrical connector ( | 2011-12-08 |
20110300759 | ELECTRICAL CARD-EDGE CONNECTOR - A card-edge connector has a housing that includes a housing body, and a plurality of electrical contacts carried by the housing body. The electrical contacts include a plurality of electrical signal contacts and a plurality of electrical power contacts. The electrical signal contacts are sized thinner than the electrical power contacts. The card-edge connector includes a mounting fastener extending out from only one side wall of the housing body at a location adjacent the electrical signal contacts. | 2011-12-08 |
20110300760 | ELECTRICAL CARD-EDGE CONNECTOR - A card-edge connector has a housing that includes a housing body, and a plurality of electrical contacts carried by the housing body. The housing is devoid of mounting ears that would extend out from the housing body. Rather, the housing includes opposing mounting guides carried by opposed housing side walls that are configured to receive a complimentary circuit board that the card-edge connector is mounted to. | 2011-12-08 |
20110300761 | ELECTRICAL ADAPTER - An electrical adapter ( | 2011-12-08 |
20110300762 | ELECTRICAL CONNECTOR HAVING SIMILARLY SHAPED CONTACTS INSERTED IN DIFFERENT DIRECTIONS - An electrical connector is mated with a counter connector in an inserting direction. The electrical connector includes an insulative housing and two rows of contacts inserted into the insulative housing in two opposite directions parallel to the inserting direction. The insulative housing defines two rows of receiving passageways arranged in a height direction perpendicular to the inserting direction. Each contact received in the receiving passageway defines a base portion, a pair of retaining portions extending from the base portion, a pair of elastic arms extending from the pair of retaining portions and a soldering portion extending from the base portion. All the contacts have a same shape expect lengths of the soldering portions. | 2011-12-08 |
20110300763 | PLUG AND CONNECTOR ASSEMBLY USING SAME - The present invention relates to a plug. The plug includes a plug body, a fixing frame, and a number of elastic plates. The plug body is made of an insulating material. A number of gold fingers are disposed on the outer surface of the plug body. The fixing frame is made of a conductive material and sleeves the plug body. The elastic plates are disposed on inner sidewalls of the fixing frame and electrically connected to the fixing frame. Each elastic plate includes an apex. The present disclosure also relates to a connector assembly using the plug. | 2011-12-08 |
20110300764 | FEEDTHROUGH FOR ELECTRICAL CONNECTORS | 2011-12-08 |
20110300765 | MODULAR JACK - A downsized modular jack with high surface-mounting performance. The modular jack has a housing and a terminal holder assembled thereto. The housing has a rear wall formed with a terminal insertion through-hole extending through a thickness of the rear wall, and a latch section insertion through-hole positioned beside the terminal insertion through-hole. The latch section insertion through-hole has an engaged portion positioned within the thickness of the rear wall. The terminal holder has a connector terminal extending through the terminal insertion through-hole and a latch section engaged with the engaged portion and positioned within the thickness of the rear wall upon assembly of the terminal holder into the housing. | 2011-12-08 |
20110300766 | Silicone Gel Seal And Method For Its Preparation And Use - A form stable gel may be used to make a seal between substrates to minimize air and moisture penetration. The form stable gel is useful in construction industry applications such as sealing window frame members, sealing retrofit and replacement windows, as well as indoor applications such as sealing bathtubs, sinks and shower surrounds. The form stable gel is also useful for sealing applications in boat hulls. | 2011-12-08 |
20110300767 | Attaching proteinaceous microspheres to a variety of fabrics using ultrasound radiation - The present invention discloses a novel system for preparing fabrics with antibacterial properties by sonochemically impregnating the fabrics with proteinaceous microspheres loaded with antibiotic. Antibacterial fabrics are widely used for production of outdoor clothes, under-wear, bed-linen, bandages, etc. | 2011-12-08 |
20110300768 | ETHYLENE ADSORBENT PACKAGING OR BARRIER MATERIAL AND METHOD OF MAKING THE SAME - An ethylene adsorbent packaging or barrier material and method of making the same. The package or barrier comprises a textile substrate impregnated with a solution of zeolite, cross-linker and binder. The method of making the ethylene adsorbent packaging or barrier material comprises impregnating a textile substrate with a solution of zeolite powder with crosslinker and binder in a solvent at a PH of 5.0 to 7.0 adjusted with an organic acid followed by removing the excess solution from the substrate and drying and curing the substrate at 50-250° C. If desired the substrate is formed to the desired shape. The packaging can be used for packing ethylene susceptible and perishable articles. The barrier material can be used as a barrier or as a separator for ethylene gas. | 2011-12-08 |
20110300769 | Light-Emitting Panel and A Method For Making - An improved light-emitting panel having a plurality of micro-components sandwiched between two substrates is disclosed. Each micro-component contains a gas or gas-mixture capable of ionization when a sufficiently large voltage is supplied across the micro-component via at least two electrodes. An improved method of manufacturing a light-emitting panel is also disclosed, which uses a web fabrication process to manufacturing light-emitting displays as part of a high-speed, continuous inline process. | 2011-12-08 |
20110300770 | GAS BARRIER FILM, GAS BARRIER FILM MANUFACTURING METHOD, RESIN SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE USING THE AFORESAID GAS BARRIER FILM, AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE AFOREMENTIONED GAS BARRIER FILM - A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=ρf/ρb) satisfies 1≧Y≧0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ρf is the density of the ceramic film and ρb is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film. | 2011-12-08 |
20110300771 | Baby Band - The Baby Band is a chest band with attached toys that are always reachable, in any natural infant position. The infant constantly rediscovers toys when returning hands to a natural resting position. The toy tethers are not long enough to wrap around the infant's neck or get tangled when the infant rolls over or crawls. The toys compress to flat or near flat to allow for normal movement and development, such as rolling or crawling. The flexible band is adjustable for comfort, can be reversible, and gives enough not to be binding, so the infant can wear it for prolonged periods of time without discomfort, but is securely fastened in the back with a variable fastener, such as hook and loop, to prevent it coming off. Also, the adjustable fastener of the chest band allows it to be worn in any state of dress or undress. | 2011-12-08 |
20110300772 | ELECTRICALLY CONDUCTING BUILDING ELEMENT - A building element for a toy building set, comprising a body part | 2011-12-08 |
20110300773 | Wig for a Doll Head - The present application provides a wig for a doll head. The wig has a concave or cup-shaped wig cap and a plurality of hair fibers extending from the exterior convex surface of the wig cap. The wig cap has a skull cap made of a flexible material which covers at least part of the head and a rigid projection which extends from the interior concave surface of the wig cap so as to be received by an aperture in the doll head when the wig is in place on the head. | 2011-12-08 |
20110300774 | ELASTIC REINFORCED INFRAMAMMARY CURVE BRA - A contouring support bra made from soft stretchable cotton knit and light, and power-net support fabrics particularly suited for pregnant and nursing women for comfortably providing an alluring, lifted tear drop breast shape analogous to that provided by properly-fitted traditional underwire bra structures. | 2011-12-08 |
20110300775 | Control of Overpolishing of Multiple Substrates on the Same Platen in Chemical Mechanical Polishing - A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time. | 2011-12-08 |
20110300776 | TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION - An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head. | 2011-12-08 |
20110300777 | GRINDING METHOD OF MULTIFUNCTION GRINDING MACHINE - It is an object of the present invention to provide a grinding method of a multifunction grinding machine having no need to exchange one end portion to the other end portion of a workpiece and having a more simple construction to grind both of one and the other end portions. | 2011-12-08 |
20110300778 | ABRADING AGENT AND ABRADING METHOD - A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3. | 2011-12-08 |