50th week of 2015 patent applcation highlights part 59 |
Patent application number | Title | Published |
20150357121 | HIGH ENERGY DENSITY CAPACTOR WITH MICROMETER STRUCTURES AND NANOMETER COMPONENTS - A high density energy storage system including a giant-colossal dielectric thin film material electrically insulating between two electrodes configured to have increased overlapping surface area. | 2015-12-10 |
20150357122 | METHOD OF MANUFACTURING SOLID ELECTROLYTIC CAPACITOR, AND SOLID ELECTROLYTIC CAPACITOR - A method of manufacturing a solid electrolytic capacitor wherein a resistance increasing process is performed on at least one of a bonding portion of an anode lead terminal and a bonding portion of an anode in order to increase contact resistance between the anode lead terminal and the anode. Thereafter, the anode and the anode lead terminal are welded to each other by resistance welding at the bonding portions. | 2015-12-10 |
20150357123 | SERIES/PARALLEL MIXED MODULE STRUCTURE OF DYE-SENSITIZED SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A dye-sensitized solar cell (DSSC) module includes sub-modules connected in parallel to each other on the same substrate. Each of the sub-modules includes a plurality of cells which have the same upper and lower structures and are connected in series to each other via a conductive grid. The conductive grid connects upper and lower substrates to each other. | 2015-12-10 |
20150357124 | Power Wafer - A power wafer includes an enclosure that houses an energy plate such as a battery, capacitor, super-capacitor or other type of electrical energy storage device. A power wafer uses conductive infusions to make internal electrical connections. In some embodiments, the power wafer has an enclosure formed of a top structure and a bottom structure, which are configured to snap together. The bottom structure has an energy plate void and conductive infusion voids. In some embodiments, the infusions have carbon nanotubes that are magnetically aligned to increase the electrical and thermal conductivity of the infusions. In certain embodiments, the enclosure is configured to hold multiple energy plates in parallel and/or in series to increase the amperage and/or voltage of the power wafer. When the plates are stacked in parallel, an insulating barrier is placed between the plates. | 2015-12-10 |
20150357125 | Printable Ionic Gel Separation Layer For Energy Storage Devices - Representative embodiments provide a liquid or gel separator utilized to separate and space apart first and second conductors or electrodes of an energy storage device, such as a battery or a supercapacitor. A representative liquid or gel separator comprises a plurality of particles, typically having a size (in any dimension) between about 0.5 to about 50 microns; a first, ionic liquid electrolyte; and a polymer. In another representative embodiment, the plurality of particles comprise diatoms, diatomaceous frustules, and/or diatomaceous fragments or remains. Another representative embodiment further comprises a second electrolyte different from the first electrolyte; the plurality of particles are comprised of silicate glass; the first and second electrolytes comprise zinc tetrafluoroborate salt in 1-ethyl-3-methylimidalzolium tetrafluoroborate ionic liquid; and the polymer comprises polyvinyl alcohol (“PVA”) or polyvinylidene fluoride (“PVFD”). Additional components, such as additional electrolytes and solvents, may also be included. | 2015-12-10 |
20150357126 | Diatomaceous Ionic Gel Separation Layer for Energy Storage Devices and Printable Composition Therefor - Representative embodiments provide a liquid or gel separator utilized to separate and space apart first and second conductors or electrodes of an energy storage device, such as a battery or a capacitor. A representative liquid or gel separator comprises a plurality of particles selected from the group consisting of: diatoms, diatomaceous frustules, diatomaceous fragments, diatomaceous remains, and mixtures thereof; a first, ionic liquid electrolyte; and a polymer or, in the printable composition, a polymer or a polymeric precursor. Another representative embodiment further comprises a second electrolyte different from the first electrolyte; the first and second electrolytes comprise zinc tetrafluoroborate salt in 1-ethyl-3-methylimidalzolium tetrafluoroborate ionic liquid; and the polymer comprises polyvinyl alcohol (“PVA”) or polyvinylidene fluoride (“PVFD”). Additional components, such as additional electrolytes and solvents, may also be included. | 2015-12-10 |
20150357127 | ELECTRODE, ELECTRIC DOUBLE-LAYER CAPACITOR USING THE SAME, AND MANUFACTURING METHOD OF THE ELECTRODE - Provided are an electrode formed by mixing carbon powder and a fibrous carbon, wherein influence of a resin-based binder or the like and an conductivity promoting material or the like is eliminated to have low electric resistance and an excellent property of capacitance; an electric double-layer capacitor using the electrodes; and a manufacturing method of the electrode. Provided is a dispersion step in which the carbon powder with a particle size of less than 100 nm and the fibrous carbon are dispersed into a solvent. The dispersion step is to allow jets of the solution to collide with each other or to apply shear stress and centrifugal force to the solution, thereby dispersing the carbon powder and the fibrous carbon. Furthermore, the method comprises the sheet electrode forming step in which the solution subjected to the dispersion step is filtered to obtain the carbon powder/fibrous carbon sheet. | 2015-12-10 |
20150357128 | ELECTRICAL APPARATUS WITH DUAL MOVEMENT OF CONTACTS COMPRISING A RETURN DEVICE WITH TWO LEVERS - The invention provides electric power line switchgear ( | 2015-12-10 |
20150357129 | Electrically Conductive Structure - An electrically conductive structure is provided with a hollow elastic member including an open bottom, a cavity, a pillar extending downward from a center of an inner surface into the cavity, a top platform, at least one hole open to the cavity, and a silver layer formed on a bottom of the pillar. Advantages such as elimination of short circuit and without heavy key depressing are obtained. | 2015-12-10 |
20150357130 | SWITCH - A switch for controlling an electrical appliance has a switch housing, an actuation element, a display, and a microprocessor disposed in the switch housing. The actuation element can activate an identifier through the display, which identifier is determined by the microprocessor. Selection of an appropriate system state and an associated maximum value is effected by again actuating the actuation element, specifically while the corresponding identifier associated with this system state is active or displayed. Reaching or exceeding the maximum value is indicated by a signal that is produced by the microprocessor. The microprocessor can optionally be activated once again for a reset mode and/or for a change mode. | 2015-12-10 |
20150357131 | SWITCH AND BUTTON THEREOF - A button includes a housing, an operating portion, a mount, a first pushing rod, a bridge, an elastic member, and a second pushing rod. The mount is mounted in the housing. The first pushing rod is movably disposed in the mount. A bump is formed on the first pushing rod. The bridge and the operating portion are disposed on ends of the first pushing rod. The second pushing rod is movably disposed on the bridge and is effected by the elastic member. A step is formed in the housing and is located between the mount and the bridge. The elastic member is disposed on the first pushing rod and is located between the bump and the step. The first pushing rod is slidable relative to the mount under the effect of the operating portion or the elastic member, and drives the bridge and/or the second pushing rod to move. | 2015-12-10 |
20150357132 | INPUT APPARATUS WITH FORCE FEEDBACK - The input apparatus with force feedback includes an operating unit that includes an operating surface, a detecting unit that detects an operation performed on the operating surface, a drive member that drives the operating unit, an elastic member that elastically supports the operating unit, and a base unit that holds the drive member. The drive member includes a solenoid that vertically drives an actuator connected to the operating unit and a casing member that holds the solenoid and the actuator. The actuator vertically penetrates through the casing member. The actuator includes a first damping member able to be brought into contact with a lower surface of the operating unit and a second damping member disposed between a lower surface of the casing member and part of the actuator. The second damping member is brought into contact with the actuator and the casing member as the actuator is driven. | 2015-12-10 |
20150357133 | WIRELESS LIGHT SWITCH SYSTEM AND METHOD, REMOTE SWITCH DEVICE, AND LOAD CONTROLLER DEVICE - A wireless load control system is provided including one or more wireless switch components and one or more load controller components optionally in one-to-one, many-to-many, many-to-one, and one-to-many wireless communication with each other. A wireless switch assembly includes a base and a corresponding rocker shell that together define an enclosure for a control circuit and at least one elastically deformable actuator, the actuator being movable between an engaged position and a disengaged position. | 2015-12-10 |
20150357134 | SWITCH, SWITCH ASSEMBLY AND SWITCH SEAL STRUCTURE - Provided is a switch attached to an attachment object through a seal member. The switch includes an operating portion including an operating surface. The switch further includes a support portion supporting the operating portion to enable a push operation for the operating portion. The switch further includes a flange portion disposed in a direction of the push operation relative to the support portion. The switch further includes a seal holding portion disposed in the direction of the push operation relative to the flange portion. The seal holding portion has a circular shaped portion or an oval shaped portion in contact with the seal member to hold the seal member with the circular shaped portion or the oval shaped portion. The switch further includes a pawl portion disposed in the direction of the push operation relative to the seal holding portion and configured to be hooked to the attachment object. | 2015-12-10 |
20150357135 | CIRCUIT BREAKER PROVIDED WITH MEANS THAT REDUCE THE SWITCHING ARC BETWEEN PERMANENT CONTACTS - A movable permanent contact ( | 2015-12-10 |
20150357136 | Modular Vacuum Interruption Apparatus - An improved modular vacuum interruption apparatus includes a vacuum interrupter, a first connection module, and a second connection module, with the first and second connection modules each being connectable and disconnectable with a pair of electrodes of the vacuum interrupter. The first connection module is selected from among a plurality of connection modules that are similar yet different and can be used interchangeably to form various permutations of the improved modular vacuum interruption apparatus. The second connection module is likewise selected from among a plurality of connection modules that are similar yet different and that are interchangeably usable with the vacuum interrupter to form different permutations of the modular vacuum interruption apparatus. Similarly, the vacuum interrupter is among a plurality of vacuum interrupters having different specifications but that are usable interchangeably with all of the first and second connection modules to form different permutations of the modular vacuum interruption apparatus. | 2015-12-10 |
20150357137 | ARC-EXTINGUISHING INSULATION MATERIAL MOLDED PRODUCT AND GAS CIRCUIT BREAKER INCLUDING THE SAME - The present invention relates to an arc-extinguishing insulation material molded product provided in the vicinity of a contact point between contactors in a gas circuit breaker. The arc-extinguishing insulation material molded product includes a polymer which contains a carbon-oxygen bond in the main chain, and in which a part of or all of terminal atoms are non-hydrogen atoms. | 2015-12-10 |
20150357138 | HEAT SENSOR - A thermal sensor with a simple structure can secure the deformability of a bimetal, and accurately control the position of the bimetal, to increase the response speed (heat response) of the bimetal. The thermal sensor includes a bimetal, a case, and a cover member. A pressing portion is provided between the cover member and the bimetal to press the bimetal to a bottom portion of the case. The pressing portion is deformable in accordance with the deformation of the bimetal. | 2015-12-10 |
20150357139 | METHOD AND STRATEGY FOR MULTIPLEXING BATTERY CYCLER HARDWARE - A method and apparatus for receiving a selection of a first device under test. Connecting the first device under test to a load based at least on a closed high-side driver relay and a closed low-side driver relay for a first switch, from a plurality of devices under test. Closing at a first rate a high-side driver relay of a first switch based at least on the received selection. Closing at a second rate a low-side driver relay of the first switch based at least on the received selection, wherein the first rate and second rate are different. | 2015-12-10 |
20150357140 | SAFETY SWITCHING APPARATUS FOR SWITCHING-ON OR SWITCHING-OFF A TECHNICAL INSTALLATION - A safety switching apparatus for switching-on or switching-off a technical installation has a first input for receiving a first clock signal via a feed line, said first clock signal having a first clock frequency. A failsafe control/evaluation unit processes the first clock signal in a failsafe manner in order to generate an output signal for switching-on or switching-off the technical installation in response to the first clock signal. A clock reference provides a second clock signal having a second clock frequency. A current-increasing circuit having a switching element is arranged for selectively increasing an input current into the first input. The switching element is coupled to the clock reference and selectively activates or deactivates the current-increasing circuit in response to the second clock frequency. | 2015-12-10 |
20150357141 | SYSTEMS AND METHODS FOR CONTROLLING RELAYS - A relay control circuit for use with a relay having a coil voltage input. The relay control circuit includes a first input to receive a first voltage capable of energizing the relay, a second input to receive a second voltage, less than the first voltage, that is capable of maintaining the relay in an energized state, and means, responsive to a relay control signal having one of a first state and a second state, for switchably coupling the coil voltage input to the first input in response to the relay control signal having the first state, and for switchably coupling the coil voltage input to the second input in response to the relay control signal having the second state. | 2015-12-10 |
20150357142 | ELECTROMECHANICAL DEVICE - Electromechanical devices described herein may employ tunneling phenomena to function as low-voltage switches. Opposing electrodes may be separated by an elastically deformable layer which, in some cases, may be made up of a non-electrically conductive material. In some embodiments, the elastically deformable layer is substantially free of electrically conductive material. When a sufficient actuation voltage and/or force is applied, the electrodes are brought toward one another and, accordingly, the elastically deformable layer is compressed. Though, the elastically deformable layer prevents the electrodes from making direct contact with one another. Rather, when the electrodes are close enough to one another, a tunneling current arises therebetween. The elastically deformable layer may exhibit spring-like behavior such that, upon release of the actuation voltage and/or force, the separation distance between electrodes is restored. Thus, the electromechanical device may be actuated between open and closed switch positions. | 2015-12-10 |
20150357143 | FOAM FUSE FILLER AND CARTRIDGE FUSE - Fuses having a melamine-coated-steatite foam filler are described. In particular, melamine-coated-steatite foam filler for use in a fuse comprising steatite coated in a melamine compound (e.g., plasticized melamine resin) and then heated to form crystalline foam filler are described. The foam filler may comprise steatite of substantially 3 times the melamine compound by weight and may be heated and then cooled to form the foam filler. | 2015-12-10 |
20150357144 | FUSE ASSEMBLY - A fuse assembly of a motor controller is provided. The fuse assembly includes a base, a base plate to which the base is attached, a lead frame that is attached to the base, at least one lead that is attached to the lead frame, and a fuse element attached to the base and covered with a fusible material. Heat is generated in the fuse element by a high flow of current carried by the assembly. The heat is operatively transferred through the assembly by direct conduction to the base and then base plate. The assembly sufficiently transfers heat to reduce rise in temperature of and properly cool the assembly. An operating temperature of the assembly is reduced to minimize or prevent damage thereto. The assembly has increased thermal-fatigue life and minimizes thermal-fatigue damage to the assembly during temperature cycling in an aircraft. Thermal stress of the assembly is minimized. | 2015-12-10 |
20150357145 | Light Bulb Installation and Removal Tool - An installation and removal tool for light bulbs and similar items comprising modular and interchangeable attachment heads, a pole, an articulating joint, and an extraction head. Attachment heads comprise a gripping unit and a handle and are each configured to cooperate with one or more light bulb shapes and/or sizes and further comprises an adhesive system. Several embodiments of the gripping unit comprise a bulb cavity with an engagement surface and a release lip and an adhesive system mounted on the engagement surface such that an air channel is created surrounding the adhesive system. The adhesive system comprises pressure sensitive adhesive and preferably defines an opening in fluid communication with a bore defined by the handle to accommodate extended and oddly shaped bulbs. A protective liner that cooperates with the adhesive component to preserve the functionality of the adhesive when it is not in use. | 2015-12-10 |
20150357146 | CATHODE OBTAINING METHOD AND ELECTRON BEAM WRITING APPARATUS - A cathode obtaining method includes producing a plurality of cathodes each including an electron emission member and a cover part, provided with a gap, which covers a side surface of the electron emission member, measuring an outer dimension of the upper surface of the electron emission member, for each of a plurality of cathodes, measuring an outer dimension of the gap at the same surface as the upper surface of the electron emission member, for each of a plurality of cathodes, calculating an area ratio by dividing the area of the gap, for each of a plurality of cathodes, obtaining an upper limit of the area ratio corresponding to a desired brightness by using a correlation between brightness and the area ratio, and selecting a cathode having the area ratio less than or equal to the upper limit from a plurality of cathodes that have been produced. | 2015-12-10 |
20150357147 | EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM - A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member. | 2015-12-10 |
20150357148 | X-Ray Sources - The present application is directed to an anode for an X-ray tube. The X-ray tube has an electron aperture through which electrons emitted from an electron source travel subject to substantially no electrical field and a target in a non-parallel relationship to the electron aperture and arranged to produce X-rays when electrons are incident upon a first side of the target, wherein the target further comprises a cooling channel located on a second side of the target. The cooling channel comprises a conduit having coolant contained therein. The coolant is at least one of water, oil, or refrigerant. | 2015-12-10 |
20150357149 | METHOD AND SYSTEM FOR A PIEZOELECTRIC HIGH VOLTAGE X-RAY SOURCE - A system and method for generating X-rays are provided. The X-ray source includes an X-ray chamber including a sidewall formed of a piezoelectric material at least partially surrounding an evacuated chamber, a cathode positioned at a first end of the evacuated chamber, an anode positioned at a second opposite end of the evacuated chamber, and a window positioned at the second end, the window substantially transparent to X-ray radiation. The window includes a target layer at least partially covering a surface of the window. The target layer is configured to receive a flow of electrons from the cathode and to generate a flow of X-rays from an interaction with the flow of electrons. The X-ray source includes an actuator coaxially aligned with the X-ray chamber and configured to generate a stress in the sidewall. | 2015-12-10 |
20150357150 | REINFORCED RADIATION WINDOW, AND METHOD FOR MANUFACTURING THE SAME - A radiation window foil is provided for an X-ray radiation window. It includes a continuous window layer with a first side and a second side. A first mesh or grid layer is stacked on or bonded to the first side of the continuous window layer. A second mesh or grid layer is stacked on or bonded to the second side of the continuous window layer. | 2015-12-10 |
20150357151 | ION IMPLANTATION SOURCE WITH TEXTURED INTERIOR SURFACES - An ion implementation system includes an ion source chamber having a textured surfaced to reduce surface film delamination on the interior walls of the ion source chamber. The residual stresses originated from the thermal expansion mismatch due to temperature changes and the tensile residual stress between film and the substrate (liners). The textured feature alters the width to thickness ratio so that it will peel off when it reaches its fracture tensile stress. The machine textures surface increases the mechanical interlocking of the film that builds up on the surface of the ion source chamber, which delays delamination and reduces the size of the resulting flake thereby reducing the likelihood that the flake will bridge a biased component to a ground reference surface and correspondingly increases the life of the ion source. | 2015-12-10 |
20150357152 | ION IMPLANTATION SYSTEM AND METHOD - An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B | 2015-12-10 |
20150357153 | CHARGED PARTICLE BEAM DEVICE - An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member. | 2015-12-10 |
20150357154 | Charged Particle Beam Device - An object of the invention is to provide a charged particle beam apparatus capable of performing high-precision measurement even on a pattern in which a width of edges is narrow and inherent peaks of the edges cannot be easily detected. In order to achieve the above object, there is proposed a charged particle beam apparatus including an opening portion forming member having a passage opening of a charged particle beam and a detector for detecting charged particles emitted from a sample or charged particles generated by causing the charged particles to collide with the opening portion forming member, the charged particle beam apparatus including: a deflector for deflecting the charged particles emitted from the sample; and a control device for controlling the deflector, the control device performing pattern measurement with the use of a first detected signal in which a signal of one edge is emphasized relatively more than a signal of another edge among a plurality of edges on the sample and a second detected signal in which the signal of the another edge is emphasized relatively more than the signal of the one edge among the plurality of edges. | 2015-12-10 |
20150357155 | Charged Particle Beam Apparatus and Trajectory Correction Method in Charged Particle Beam Apparatus - There is provided a charged particle beam apparatus that includes a trajectory monitoring unit which is disposed above an objective lens ( | 2015-12-10 |
20150357156 | Charged-Particle Beam Device - The present invention explains a charged-particle beam device for the purpose of highly accurately measuring electrostatic charge of a sample in a held state by an electrostatic chuck ( | 2015-12-10 |
20150357157 | PARTICLE BEAM SYSTEM AND METHOD FOR OPERATING A PARTICLE OPTICAL UNIT - A method for operating a multi-beam particle optical unit comprises includes providing a first setting of effects of particle-optical components, wherein a particle-optical imaging is characterizable by at least two parameters. The method also includes determining a matrix A, and determining a matrix S. The method further includes defining values of parameters which characterize a desired imaging, and providing a second setting of the effects of the components in such a way that the particle-optical imaging is characterizable by the parameters having the defined values. | 2015-12-10 |
20150357158 | Method for Pattern Measurement, Method for Setting Device Parameters of Charged Particle Radiation Device, and Charged Particle Radiation Device - An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam. | 2015-12-10 |
20150357159 | Fiducial Design for Tilted or Glancing Mill Operations with a Charged Particle Beam - A method for analyzing a sample with a charged particle beam including directing the beam toward the sample surface; milling the surface to expose a second surface in the sample in which the end of the second surface distal to ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to ion source; directing the charged particle beam toward the second surface to form one or more images of the second surface; forming images of the cross sections of the multiple adjacent features of interest by detecting the interaction of the electron beam with the second surface; assembling the images of the cross section into a three-dimensional model of one or more of the features of interest. A method for forming an improved fiducial and determining the depth of an exposed feature in a nanoscale three-dimensional structure is presented. | 2015-12-10 |
20150357160 | ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD - An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated. | 2015-12-10 |
20150357161 | DEFECT CONTROL IN RF PLASMA SUBSTRATE PROCESSING SYSTEMS USING DC BIAS VOLTAGE DURING MOVEMENT OF SUBSTRATES - A substrate processing system includes a processing chamber and an upper electrode arranged in the processing chamber. A pedestal is configured to support a substrate during processing and includes a lower electrode. An RF generating system is configured to generate RF plasma between the upper electrode and the lower electrode by supplying an RF voltage. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode. A start of the DC bias voltage is initiated one of a first predetermined period before the RF plasma is extinguished and a second predetermined period after the RF plasma is extinguished. A substrate movement system is configured to move the substrate relative to the pedestal while the DC bias voltage is generated. | 2015-12-10 |
20150357162 | JIG AND PLASMA ETCHING APPARATUS INCLUDING THE SAME - A jig comprises a base constructed and arranged to be exposed to plasma for etching a native oxide layer on electronic devices. A pocket structure is on an upper surface of the base. The pocket structure includes pockets constructed and arranged to receive the electronic devices, The pocket structure has at least one passageway through which the plasma is moved in a horizontal direction between the pockets. | 2015-12-10 |
20150357163 | Plasma Treatment Device Comprising a Roller Mounted Rotatably in a Handle Housing - A plasma treatment device for treating a surface with a dielectrically impeded plasma field which is generated between an electrode ( | 2015-12-10 |
20150357164 | PROCESS CHAMBER, METHOD OF PREPARING A PROCESS CHAMBER, AND METHOD OF OPERATING A PROCESS CHAMBER - Process chambers and methods of preparing and operating a process chamber are disclosed. In some embodiments, a method of preparing a process chamber for processing a substrate includes: forming a first barrier layer over an element disposed within a cavity of the process chamber, the element comprising an outgassing material; and forming, within the process chamber, a second barrier layer over the first barrier layer. | 2015-12-10 |
20150357165 | PLASMA PROCESSING APPARATUS AND CLEANING METHOD - Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a DC voltage application unit configured to apply a DC voltage to the upper electrode. The shower head includes a UEL base, and a CEL provided on the UEL base at susceptor side, and an insulating portion provided between the UEL base and the CEL. The DC power supply applies the DC voltage to the CEL. | 2015-12-10 |
20150357166 | METHOD FOR ATTACHMENT OF AN ELECTRODE INTO AN INDUCTIVELY-COUPLED PLASMA - An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible. | 2015-12-10 |
20150357167 | APPARATUS AND METHOD FOR MASS ANALYZED ION BEAM - In one embodiment, a processing apparatus includes a plasma chamber configured to house a plasma comprising first ions and second ions. The apparatus may further include a resonance RF power supply to generate a drive signal that is coupled to the plasma chamber, the drive signal having a drive frequency. The apparatus may also include a magnet assembly to generate a magnetic field in the plasma chamber, wherein the magnet assembly is configured to generate a first magnetic field strength that imparts a first cyclotron frequency for the first ions that matches the drive frequency of the drive signal, wherein the first magnetic field strength imparts a second cyclotron frequency for the second ions that does not match the drive frequency of the drive signal, and wherein the first ions are selectively driven into a chamber wall of the plasma chamber. | 2015-12-10 |
20150357168 | REAGENT DELIVERY SYSTEM FREEZE PREVENTION HEAT EXCHANGER - Apparatus and methods that provide a reagent gas in a foreline abatement system are provided herein. In some embodiments, a reagent delivery system includes a water tank having an inner volume that holds a reagent liquid when disposed therein, and a heat exchanger having a central opening disposed in the inner volume and configured to keep a top surface of the reagent liquid from freezing when reagent liquid is disposed within the water tank. | 2015-12-10 |
20150357169 | SILICON SPUTTERING TARGET WITH ENHANCED SURFACE PROFILE AND IMPROVED PERFORMANCE AND METHODS OF MAKING THE SAME - A sputtering target assembly and method of manufacturing the sputtering target assembly is provided. The sputtering target assembly may have a target blank. The target blank may have at least one planar surface with a thickness T | 2015-12-10 |
20150357170 | TUNGSTEN SINTERED COMPACT SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - Provided is a tungsten sintered compact sputtering target containing iron as an impurity in an amount of 0.8 wtppm or less, and remainder being tungsten and other unavoidable impurities, wherein a range of iron concentration in a target structure is within a range of ±0.1 wtppm of an average concentration. Additionally provided is a tungsten sintered compact sputtering target according to claim | 2015-12-10 |
20150357171 | METHODS AND APPARATUS FOR IMPROVED METAL ION FILTERING - Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator. | 2015-12-10 |
20150357172 | DEPOSITION AID FOR THE MANUAL DEPOSITION OF MASS SPECTROMETRIC SAMPLES - The invention concerns the reduction of the risk of an incorrect assignment of samples to sample sites during the manual deposition of samples for ionization by laser desorption (for example MALDI or LDCI). The invention offers a method wherein a sample support with several sample sites is provided, at least one sample site is selected, and the selected sample site is highlighted, at least in contrast to neighboring not selected sample sites, in a way which the human eye can perceive. | 2015-12-10 |
20150357173 | LASER ABLATION ATMOSPHERIC PRESSURE IONIZATION MASS SPECTROMETRY - In an embodiment, the present invention provides an apparatus for mass spectrometry which includes a laser ablation sampler comprising a laser ablation chamber and a laser. The laser ablation chamber is configured so that the laser can irradiate and ablate a material from a sample to generate an ablated sample material. An atmospheric pressure ionization source generates an ion population. The atmospheric pressure ionization source is operatively connected to the laser ablation chamber via a transfer line so that an ablated sample material is transportable thereto. A mass spectrometer is operatively connected to the laser ablation chamber and to the atmospheric pressure ionization source. The ablated sample material interacts with the atmospheric pressure ionization source to generate an ion population having a mass-to-charge ratio distribution. The ion population is transmitted to the mass spectrometer, which provides information on a mass-to-charge ratio distribution of the ion population. | 2015-12-10 |
20150357174 | ION FUNNEL DEVICE - An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second direction. The device includes an RF voltage source and a DC voltage source. A RF voltage with a superimposed DC voltage gradient is applied to the first pair of electrodes, and a DC voltage gradient is applied to the second pair of electrodes. | 2015-12-10 |
20150357175 | Mass Spectrometer With Improved Magnetic Sector - The present invention relates to a compact and portable mass spectrometer device comprising a source of ions, a non-scanning magnetic sector for separating ions originating at the source of ions according to their mass-to-charge ratios, and a detection means. The magnetic sector comprises an ion entrance plane and at least two ion exit planes, which allow to optimize the resolving power of the mass spectrometer for specific mass-to charge ratio sub-ranges. | 2015-12-10 |
20150357176 | MASS ANALYSIS DEVICE AND MASS SEPARATION DEVICE - An object of the present invention is to provide a mass spectrometer and a mass separator whose design and performance are less restricted by problems arising from the principle of operation, and which have in principle no limitation on the mass-to-charge ratio range to be able to deal with and are each capable of repeatedly analyzing or extracting plural ionic species of different mass-to-charge ratios in a short time. | 2015-12-10 |
20150357177 | RUN-UP TIME IN AMALGAM DOSED COMPACT FLUORESCENT LAMPS - In some embodiments, a fluorescent lighting device includes an arc tube; an amalgam flag including two opposing planar surfaces within the arc tube, the planar surfaces being adjacent to each other along a first edge of the planar surfaces and spaced apart from each other along a second edge of the planar surfaces; a quantity of amalgam deposited on the planar surfaces of the amalgam flag; and an electrode disposed within the arc tube to, at least in part, heat the quantity of amalgam when energized. | 2015-12-10 |
20150357178 | HIGH INTENSITY DISCHARGE LAMPS WITH DOSING AID - A ceramic metal halide lamp according to various embodiments can include a discharge vessel and an ionizable fill. The ionizable fill is sealed within the discharge vessel. The ionizable fill includes an oxygen dispenser to introduce oxygen in a form of a pellet into the discharge vessel in a controlled manner to facilitate a tungsten halogen wall cleaning cycle. The pellet comprises aluminum-oxide and molybdenum-oxide. | 2015-12-10 |
20150357179 | Broadband Light Source Including Transparent Portion with High Hydroxide Content - A laser-sustained plasma light source includes a plasma lamp configured to contain a volume of gas and receive illumination from a pump laser in order to generate a plasma. The plasma lamp includes one or more transparent portions transparent to illumination from the pump laser and at least a portion of the broadband radiation emitted by the plasma. The one or more transparent portions are formed from a transparent material having elevated hydroxide content above 700 ppm. | 2015-12-10 |
20150357180 | METHODS FOR CLEANING SEMICONDUCTOR SUBSTRATES - Methods for cleaning semiconductor substrates with cleaning baths including ammonium hydroxide, hydrogen peroxide and a non-ionic surfactant are disclosed. The methods may result in reduced re-adhesion of released particles during cleaning which produces cleaner substrates. | 2015-12-10 |
20150357181 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate. | 2015-12-10 |
20150357182 | Fabrication of III-Nitride Power Semiconductor Device - A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods. | 2015-12-10 |
20150357183 | METHODS FOR FORMING INTERCONNECT STRUCTURE UTILIZING SELECTIVE PROTECTION PROCESS FOR HARDMASK REMOVAL PROCESS - Methods and apparatuses for forming a dual damascene structure utilizing a selective protection process to protect vias and/or trenches in the dual damascene structure while removing a hardmask layer from the dual damascene structure. In one embodiment, a method for removing a patterned hardmask layer from a substrate includes forming an organic polymer material on a dual damascene structure that exposes substantially a patterned hardmask layer disposed on an upper surface of the dual damascene structure, removing the patterned hardmask layer on the substrate, and removing the organic polymer material from the substrate. | 2015-12-10 |
20150357184 | REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES - In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber. | 2015-12-10 |
20150357185 | METHODS OF PROVIDING DIELECTRIC TO CONDUCTOR ADHESION IN PACKAGE STRUCTURES - Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material. | 2015-12-10 |
20150357186 | Wafer Back Side Processing Structure and Apparatus - Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms. | 2015-12-10 |
20150357187 | MODIFICATION PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas. | 2015-12-10 |
20150357188 | FILM FORMING METHOD, COMPUTER STORAGE MEDIUM, AND FILM FORMING SYSTEM - The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate. | 2015-12-10 |
20150357189 | METHODS FOR INTEGRATING LEAD AND GRAPHENE GROWTH AND DEVICES FORMED THEREFROM - Methods for forming integrated graphite-based structures with interconnections between leads and graphene layers are provided. A substrate is patterned to form a plurality of elements on the substrate. A trench separates a first element from an adjacent element in the plurality of elements. A lead is deposited on a side wall of the first element, and a layer from the top of the first element is removed to expose a portion of the lead. Both the deposition of the lead and removal of a layer from the top of the first element are conducted before generation of graphene layers on the top of the first element and the bottom of the trench. Thus, an integrated graphite-based structure having spatially isolated but electrically connected graphene layers is formed. | 2015-12-10 |
20150357190 | SEMICONDUCTOR DEVICE HAVING FIN-SHAPED STRUCTURE AND METHOD FOR FABRICATING THE SAME - A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween. | 2015-12-10 |
20150357191 | METHOD FOR MANUFACTURING ORDERED NANOWIRE ARRAY OF NIO DOPED WITH PT IN SITU - The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H | 2015-12-10 |
20150357192 | METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE - Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques. | 2015-12-10 |
20150357193 | METHOD FOR PRODUCING AN EPITAXIAL SEMICONDUCTOR LAYER - A method for producing an epitaxial layer made of a semiconductor material is provided in which at least one surface region of a monocrystalline substrate is subjected to dry etching inside a work chamber. A non-epitaxial semiconductor layer is then deposited on the etched surface region of the monocrystalline substrate by vaporizing a semiconductor material using an electron beam, as a result of which vapour particles of the vaporized semiconductor material are deposited on the etched surface region of the monocrystalline substrate. The non-epitaxial semiconductor layer is finally crystallized by inputting energy. | 2015-12-10 |
20150357194 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method, on a film to be processed, a mask material film is formed which has pattern openings for a plurality of contact patterns and connection openings for connecting adjacent pattern openings in such a manner that the connection between them is constricted in the middle. Then, a sidewall film is formed on the sidewalls of the individual openings in the mask material film, thereby not only making the diameter of the pattern openings smaller but also separating adjacent pattern openings. Then, the film to be processed is selectively etched with the mask material film and sidewall film as a mask, thereby making contact holes. | 2015-12-10 |
20150357195 | ELECTROCHEMICAL PLATING METHODS - An electrochemical process for applying a conductive film onto a substrate having a seed layer includes placing the substrate into contact with an electrochemical plating bath containing cobalt or nickel, with the plating bath having pH of 4.0 to 9.0. Electric current is conducted through the bath to the substrate. The cobalt or nickel ions in the bath deposit onto the seed layer. The plating bath may contain cobalt chloride and glycine. The electric current may range from 1-50 milli-ampere per square cm. After completion of the electrochemical process, the substrate may be removed from the plating bath, rinsed and dried, and then annealed at a temperature of 200 to 400 C to improve the material properties and reduce seam line defects. The plating and anneal process may be performed through multiple cycles. | 2015-12-10 |
20150357196 | Reducing Defects in Patterning Processes - A method includes forming a mask layer forming a first photo resist over the mask layer, performing a first patterning step on the first photo resist, and performing a first etching step on the mask layer using the first photo resist as an etching mask. The first photo resist is then removed. The method further includes forming a particle-fixing layer on a top surface and sidewalls of the mask layer, forming a second photo resist over the particle-fixing layer and the mask layer, performing a second patterning step on the second photo resist, and performing a second etching step on the particle-fixing layer and the mask layer using the second photo resist as an etching mask. The particle-fixing layer is etched through. A target layer underlying the mask layer is etched using the mask layer as an etching mask. | 2015-12-10 |
20150357197 | SELECTIVE ETCHING OF SILICON WAFER - A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×10 | 2015-12-10 |
20150357198 | METHOD OF ETCHING AND CLEANING WAFERS - A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers. | 2015-12-10 |
20150357199 | CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS - Methods for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad. | 2015-12-10 |
20150357200 | DRY ETCHING METHOD - The present invention is an etching method comprising etching a multilayered laminate film that includes at least one silicon oxide film layer and at least one silicon nitride film layer using an etching gas, the etching method simultaneously etching both the silicon oxide film layer and the silicon nitride film layer, the etching gas comprising a linear saturated fluorohydrocarbon compound represented by a formula (1): C | 2015-12-10 |
20150357201 | NON-LOCAL PLASMA OXIDE ETCH - A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride. | 2015-12-10 |
20150357202 | PEROXIDE-VAPOR TREATMENT FOR ENHANCING PHOTORESIST-STRIP PERFORMANCE AND MODIFYING ORGANIC FILMS - Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment. | 2015-12-10 |
20150357203 | PATTERNING METHOD AND PATTERNING APPARATUS - A patterning method is described. A patterned mask layer is formed on a material layer, having therein a first opening exposing a portion of the material layer. A pre-treatment process is performed to modify the material layer exposed in the first opening and form a modified region therein. An etching process is performed to remove the material layer in the modified region at least and form a second opening in the material layer. | 2015-12-10 |
20150357204 | QUATERNARY AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS - A quaternary ammonium salt compound is represented by the following formula (A-1), | 2015-12-10 |
20150357205 | SELECTIVE TITANIUM NITRIDE REMOVAL - Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer. | 2015-12-10 |
20150357206 | USE OF AN ETCH STOP IN THE MIM CAPACITOR DIELECTRIC OF A MMIC - A structure having; a body; a pair of capacitors disposed over different portions of a surface of the body; a first one of the capacitors having an upper conductor and a lower conductor separated a dielectric layer; and a second one of the pair of capacitors having an upper conductor and a lower conductor separated a dielectric structure, the dielectric structure having a lower dielectric layer, and an upper dielectric layer, wherein the material of the lower dielectric layer is different from the material of the upper dielectric layer. | 2015-12-10 |
20150357207 | SELECTIVE ETCHING OF SILICON WAFER - An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers. | 2015-12-10 |
20150357208 | CLEANING CHEMICAL SUPPLYING DEVICE, CLEANING CHEMICAL SUPPLYING METHOD, AND CLEANING UNIT - A cleaning chemical supplying device, a cleaning chemical supplying method, and a cleaning unit capable of flexibly handling a change of a dilution ratio and suppression of an increase of a device size are provided. | 2015-12-10 |
20150357209 | NEGATIVE ION CONTROL FOR DIELECTRIC ETCH - Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer. | 2015-12-10 |
20150357210 | METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS - There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value. | 2015-12-10 |
20150357211 | TRANSPORT DEVICE - Provided is a transport device that can simultaneously transport a plurality of articles with a simple device configuration. The transport device includes a chucking device that holds a magazine. An overhead carriage that transports the magazine held by the chucking device includes article storage parts that each accommodate the magazine held by the chucking device. The article storage parts include rotary tables that receive, from the chucking device, the magazine held by the chucking device. The rotary tables having received the magazines from the chucking device move from the chucking device to the article storage parts. | 2015-12-10 |
20150357212 | PLANARIZATION METHOD AND PLANARIZATION APPARATUS - According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate. | 2015-12-10 |
20150357213 | SUBSTRATE ATTACHING/DETACHING UNIT FOR SUBSTRATE HOLDER, WET-TYPE SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, SUBSTRATE HOLDER CONVEYING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE CONVEYING METHOD - A substrate attaching/detaching unit includes a stocker accommodating a plurality of substrate holders | 2015-12-10 |
20150357214 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a tilting unit configured to tilt, in a vacuum vessel, a substrate holder including a refrigerator, and a rotary joint provided in the tilting unit and including a coolant path configured to supply or exhaust a coolant gas to or from the refrigerator. The rotary joint includes a fixed portion fixed to the vacuum vessel, a pivotal portion provided so as to pivot with respect to the fixed portion and fixed to the substrate holder, and a grease supply passage. | 2015-12-10 |
20150357215 | MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES - A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps. | 2015-12-10 |
20150357216 | COMPUTER VISUAL RECOGNITION OUTPUT IMAGE-AIDED LED DIE SORTING SYSTEM AND SORTING METHOD - The invention relates to computer visual recognition output image-aided LED die sorting system and sorting method. The computer visual recognition output image-aided LED die sorting system comprises an optical inspection device, a scanning device, a tablet computer device and a die sucking device. The scanning device scans an inspection result of the optical inspection device and transfers the scan data to the tablet computer device, and then the tablet computer device displays a recognition signal for a user to determine rapidly. Meanwhile, the sorting method can be performed to decrease the manpower cost and enhance the quality yield and production speed. | 2015-12-10 |
20150357217 | WARPED SILICON-CHIP ADSORPTION DEVICE AND ADSORPTION METHOD THEREOF - An apparatus and method for adsorbing a wafer are disclosed. The apparatus includes a chuck ( | 2015-12-10 |
20150357218 | GAS DISTRIBUTOR USED IN WAFER CARRIERS - The present invention relates to gas distributors used in wafer carriers. The gas distributors comprise a body having an interior space, a separator configured at the front side of the body in the interior space, and an air inlet connected with the body. One edge of the separator and the front side of the body together form a passage. The configuration of the passage in the gas distributors enables the gas distributors to evenly distribute gases. | 2015-12-10 |
20150357219 | END EFFECTOR DEVICE - The end effector device includes a hand having a storing space, and a plurality of holding portions provided to the hand and configured to respectively peripheral portions of each plate member. Each holding portion includes a plurality of receiving portions which respectively receive a plurality of plate members keeping vertical pitches among them, and a pitch changing mechanism configured to change intervals by vertically moving the plurality of receiving portions respectively. A plurality of linearly moving portions configured to respectively move linearly integrally with the plurality of receiving portions are provided to the hand being exposed outside of the hand, and a plurality of drive portions configured to drive the plurality of linearly moving portions of the pitch changing mechanism are stored in the storing space of the hand. | 2015-12-10 |
20150357220 | ATTACHMENT MEMBER AND ATTACHMENT DEVICE USING THE SAME - An attachment member ( | 2015-12-10 |