Abedrabbo
Nader E. Abedrabbo, Cypress, TX US
Patent application number | Description | Published |
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20120273237 | EXPANSION SYSTEM FOR AN EXPANDABLE TUBULAR ASSEMBLY - The present invention generally relates to an apparatus and method for expanding an expandable tubular assembly in a borehole. In one aspect, a system for expanding a tubular having an anchor portion in a borehole is provided. The system includes a running tool configured to position the tubular in the borehole. The running tool including a first expander configured to activate the anchor portion by expanding the tubular to a first diameter. The system further includes a second expander configured to expand the tubular to a second larger diameter, wherein the second expander is movable between a retracted position and an expanded position. In another aspect, a method of expanding a tubular having an anchor portion in a borehole is provided. | 11-01-2012 |
Nader Elias Abedrabbo, Cypress, TX US
Patent application number | Description | Published |
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20130319692 | COMPLIANT CONE SYSTEM - The present invention generally relates to a cone system having a cone segment capable of deflecting in response to a restriction or obstruction encountered while expanding a tubular. In one aspect, an expansion cone system is provided. The expansion cone system includes a mandrel and two or more pockets disposed circumferentially around the mandrel. Each pocket is at least partially defined by a fin member. The expansion cone system further includes a cone segment coupled to each pocket. Additionally, the expansion cone system includes a biasing member disposed between the mandrel and the respective cone segment. In another aspect, a method of expanding a wellbore tubular is provided. | 12-05-2013 |
Sufian Abedrabbo, Kenilworth, NJ US
Patent application number | Description | Published |
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20130292707 | Semiconductor Optical Emission Device - A semiconductor optical emission device comprising a layer of material containing a plurality of stress variations and adhering to a surface of a semiconductor is described. In one embodiment the semiconductor is an indirect band gap semiconductor and is silicon in one aspect, the material of the layer comprises silicon and metal oxides and is prepared by a sol-gel process including thermal annealing in one aspect. The layer urges a plurality of randomly distributed elastic deformations in the semiconductor that substantially enhances the radiative recombination interactions among free carriers in the semiconductor. | 11-07-2013 |