Abiko, Tokyo
Ichimatsu Abiko, Tokyo JP
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20080274571 | Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device - In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces ( | 11-06-2008 |
20090149000 | Combined semiconductor apparatus with thin semiconductor films - A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost. | 06-11-2009 |
20100072633 | Semiconductor apparatus with thin semiconductor film - A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost. | 03-25-2010 |
20100096748 | Combined semiconductor apparatus with semiconductor thin film - A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film. | 04-22-2010 |
20110081738 | Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head - A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer. | 04-07-2011 |
20110147760 | Semiconductor apparatus with thin semiconductor film - A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost. | 06-23-2011 |
20130230339 | SEMICONDUCTOR APPARATUS WITH THIN SEMICONDUCTOR FILM - A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost. | 09-05-2013 |
Kohki Abiko, Tokyo JP
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20160139550 | IMAGE FORMING APPARATUS AND RECORDING MATERIAL DETERMINATION UNIT - An image forming apparatus includes an image forming unit for forming an image on a recording material, a first detection unit including a transmission unit for transmitting an ultrasonic wave and a reception unit for receiving the transmitted ultrasonic wave, first and second conveyance units for conveying the recording material, and a control unit. The first and second conveyance units form a loop on the recording material by conveying the recording material at different speeds. The control unit controls an image forming condition for forming an image on the recording material by the image forming unit, based on the ultrasonic wave received via the recording material in a period in which no loop is formed on the recording material by the first and second conveyance units. | 05-19-2016 |
Masahiro Abiko, Tokyo JP
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20110038907 | Organic-Coated Synthetic Mica Powder, Production Method Thereof, And Cosmetics Using The Same - The present invention provides an organic-coated synthetic mica powder excellent in feeling in use and water-repellent property by an organic coating layer from an organic surface treatment agent, which is firmly and chemically bound to the surface of the synthetic mica powder, and further provides, when an organosilicone having Si—H groups is used as the organic surface treatment agent, an organic-coated synthetic mica powder having very little hydrogen evolution due to residual Si—H groups. The organic-coated synthetic mica powder can be obtained by a producing method comprising a pretreatment process and a coating process, said pretreatment process comprising: contacting synthetic mica powder and an ammonium ion in water; carrying out solid-liquid separation to remove the liquid phase; and drying the solid phase at 200° C. or lower to volatilize NH | 02-17-2011 |
Minoru Abiko, Tokyo JP
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20090134467 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG. | 05-28-2009 |
Satoko Abiko, Tokyo JP
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20110053799 | METHOD OF PRODUCING MICROARRAY SUBSTRATE, RADIATION-SENSITIVE COMPOSITION, PARTITION OF MICROARRAY SUBSTRATE, METHOD OF PRODUCING BIOCHIP, AND BIOCHIP - A method is of producing a microarray substrate that includes a substrate, a partition that is formed on a surface of the substrate, and an area that is positioned over the substrate and defined by the partition. The method includes forming a first film on the substrate using a radiation-sensitive composition. The radiation-sensitive composition includes a coloring agent (A) including at least one of a violet pigment (a2) and a compound (a1) shown by a formula (1) in which each of R | 03-03-2011 |
Syohei Abiko, Tokyo JP
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20110206876 | VACUUM THERMAL INSULATING MATERIAL AND METHOD OF MANUFACTURING THE SAME, AND THERMAL INSULATING BOX HAVING THE VACUUM THERMAL INSULATING MATERIAL - In a vacuum thermal insulating material having a core material enclosed in a gas barrier container whose inside is made to be a decompressed state, the core material has a lamination structure in which a plurality of sheet-shaped long fiber organic fibrous assemblies are continuously wound up from an inner periphery to an outer periphery. Then, a plurality of sheet-shaped organic fibrous assemblies are arranged in parallel and sheet-shaped multiple organic fibrous assemblies having joint sections are formed. The joint sections are made not to overlap with the upper and lower of joint sections. | 08-25-2011 |
20110274868 | VACUUM THERMAL INSULATING MATERIAL AND THERMAL INSULATING BOX INCLUDING THE SAME - There are provided a vacuum thermal insulating material that is excellent in terms of a handling property, a thermal insulating property, creep resistance, and productivity; and a thermal insulating box including the vacuum thermal insulating material. A core material was enclosed and sealed in a wrapping material with a gas barrier property. The core material of the vacuum thermal insulating material in which the interior of the wrapping material is in a decompression state, is constituted by one organic fibrous assembly having continuous organic fibers formed sheet-shaped or a stack of the organic fibrous assemblies. | 11-10-2011 |
Takashi Abiko, Tokyo JP
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20110275666 | ACTIVATED BLOOD COAGULATION FACTOR X (FXA) INHIBITOR - An object of the present invention is to provide an activated blood coagulation factor X (FXa) inhibitor that reduces the risk of bleeding caused by the treatment of thromboembolism. The present invention provides an oral anticoagulant agent comprising a compound represented by the following formula (1): | 11-10-2011 |
20130184308 | ACTIVATED BLOOD COAGULATION FACTOR X (FXa) INHIBITOR - An object of the present invention is to provide an activated blood coagulation factor X (FXa) inhibitor that reduces the risk of bleeding caused by the treatment of thromboembolism. The present invention provides an oral anticoagulant agent comprising a compound represented by the following formula ( | 07-18-2013 |
Yuya Abiko, Tokyo JP
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20160049466 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region surrounding a cell region in which a semiconductor element is formed. In an epitaxial layer of the peripheral region surrounding the cell region in which the semiconductor element is formed, a trench spirally surrounding the cell region and having the first and second side faces making up the corner is formed and the trench is filled with the epitaxial layer. By spirally arranging the p-type column region (n-type column region) in such a manner, a drop in a withstand voltage margin due to a hot spot can be avoided. In addition, the continuity of the p-type column region (n-type column region) is maintained. As a result, electric field concentration is alleviated step by step toward the outer periphery and the withstand voltage is therefore increased. | 02-18-2016 |