Patent application number | Description | Published |
20080305582 | POWER SEMICONDUCTOR PACKAGING METHOD AND STRUCTURE - A semiconductor chip packaging structure is fabricated by using a dielectric film with two surfaces, and a power semiconductor chip with an active surface having contact pads. An adhesive layer is used to connect the first surface of the dielectric film and the active surface of the power semiconductor chip. A patterned electrically conductive layer is formed adjacent to the second surface of the film, extending through holes in the film to the contact pads. | 12-11-2008 |
20090031733 | THERMOTUNNELING REFRIGERATION SYSTEM - A refrigeration system is provided. The refrigeration system includes at least one thermal blocking thermotunneling device. The thermal blocking thermotunneling device comprises a first and a second surface separated by a nanoscale gap of less than about 20 nm, such that tunneling of electrons causes a unidirectional transfer of heat from the first surface to the second surface. Further, the at least one thermal blocking thermotunneling device has a thermal back path of less than about 70 percent. | 02-05-2009 |
20120274139 | SWITCHING COORDINATION OF DISTRIBUTED DC-DC CONVERTERS FOR HIGHLY EFFICIENT PHOTOVOLTAIC POWER PLANTS - A distributed photovoltaic (PV) power plant includes a plurality of distributed dc-dc converters. The dc-dc converters are configured to switch in coordination with one another such that at least one dc-dc converter transfers power to a common dc-bus based upon the total system power available from one or more corresponding strings of PV modules. Due to the coordinated switching of the dc-dc converters, each dc-dc converter transferring power to the common dc-bus continues to operate within its optimal efficiency range as well as to optimize the maximum power point tracking in order to increase the energy yield of the PV power plant. | 11-01-2012 |
20130076144 | SYSTEM AND METHOD FOR LIMITING PHOTOVOLTAIC STRING VOLTAGE - A system and method are provided for enabling a PV inverter to be connected to a string of series connected PV modules without exposing the inverter to elevated voltage stresses. The input voltage to the inverter is gradually built up by sequentially switching in more series PV modules. This system and method are simple to implement in both centralized and distributed PV power plants and in either case, it significantly increases the utilization of the PV inverter. The input switching elements can be implemented using a wide variety of parts including electro-mechanical switches, semiconductor switches (IGBTs, MOSFETs . . . , etc.) as well as MEMS devices depending on the current level and target cost. A mix of switches can also be used to assist in minimizing impedance of the final switching stage that remains connected during normal operation. | 03-28-2013 |
20130323873 | OPTICALLY TRIGGERED SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body. | 12-05-2013 |
20140001856 | MULTILEVEL POWER CONVERTER | 01-02-2014 |
20140005845 | SYSTEM AND METHOD FOR DESIGN AND OPTIMIZATION OF GRID CONNECTED PHOTOVOLTAIC POWER PLANT WITH MULTIPLE PHOTOVOLTAIC MODULE TECHNOLOGIES | 01-02-2014 |
20140070229 | SYSTEMS AND METHODS FOR TERMINATING JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR DEVICES - An electrical device includes a blocking layer disposed on top of a substrate layer, wherein the blocking layer and the substrate layer each are wide bandgap semiconductors, and the blocking layer and the substrate layer form a buried junction in the electrical device. The device comprises a termination feature disposed at a surface of the blocking layer and a filled trench disposed proximate to the termination feature. The filled trench extends through the blocking layer to reach the substrate layer and is configured to direct an electrical potential associated with the buried junction toward the termination feature disposed near the surface of the blocking layer to terminate the buried junction. | 03-13-2014 |
20140070231 | SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME - A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented. | 03-13-2014 |