Patent application number | Description | Published |
20080206899 | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus - A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter. | 08-28-2008 |
20080283404 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TO DECREASE DEFECT NUMBER OF PLATING FILM - A method for manufacturing a semiconductor device is provided which includes performing an electroplating step to fill concavities formed on a substrate. The electroplating step further includes: performing a first electroplating step; performing a first reverse bias step; performing a second electroplating step; performing a second reverse bias step; and a third electroplating step. The polarity of the first and the second reverse bias steps is different from that of the first electroplating step. A difference between the third current density and the fourth current density is larger than a difference between the first current density and the second current density. | 11-20-2008 |
20080293247 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas. | 11-27-2008 |
20090242409 | PLATING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PLATE PROCESSING SYSTEM - A plating film is formed by the steps of applying a direct current between a cathode and an anode (S | 10-01-2009 |
20100127404 | SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound). | 05-27-2010 |
20100210102 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller. | 08-19-2010 |
20110079909 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed. | 04-07-2011 |
20110155578 | PLATING PROCESS AND MANUFACTURING PROCESS FOR SEMICONDUCTOR DEVICE THEREBY - An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step | 06-30-2011 |
20120003820 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming an AlN layer on a substrate made of silicon by supplying an Al source without supplying a N source and then supplying both the Al source and the N source, and forming a GaN-based semiconductor layer on the AlN layer after the forming of the AlN layer. The forming of the AlN layer grows the AlN layer so as to satisfy the following: | 01-05-2012 |
20120003821 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer. | 01-05-2012 |
20120235302 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor manufacturing method includes: forming a seed film including a first metal over a bottom surface and a side wall of an opening portion formed over interlayer insulating films and a field portion located over the interlayer insulating film except the opening portion, forming a resist over the seed film and filling the opening portion with the resist, removing part of the resist, exposing the seed film formed over the upper portion of the side walls of the opening portion and the field portion, forming a cover film including a second metal, whose resistivity is higher than that of the first metal, over the seed film located over the upper portion of the side wall of the opening portion and the field portion, exposing the seed film by removing the resist, and forming a plating film including the first metal over the exposed seed film. | 09-20-2012 |
20120264288 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed. | 10-18-2012 |
Patent application number | Description | Published |
20080236885 | THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME - A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer. | 10-02-2008 |
20090159039 | Air cleaner and engine including the same - A tubular channel is disposed in a path of air that flows from an inlet to a dirty side. The cross sectional area of the tubular channel is smaller than the cross-sectional area of the inlet. A dust outlet is disposed in a wall in a path of the air that flows out of the exit of the tubular channels to the dirty side. The dust outlet extends through the wall of the air cleaner from the inside to the outside. As the air blasts out of the dust outlet, dust in the air cleaner is discharged to the outside. | 06-25-2009 |
20090166074 | ELECTRONIC COMPONENT - The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point. | 07-02-2009 |
20090244809 | Thin-film device and method of manufacturing same - A thin-film device includes a substrate, and a capacitor provided on the substrate. The capacitor incorporates a lower conductor layer having a top surface and a side surface; a flattening film disposed to cover the top and side surfaces of the lower conductor layer; a dielectric film disposed on the flattening film; and an upper conductor layer disposed on the dielectric film. The lower conductor layer is composed of an electrode film and a plating film disposed on the electrode film. The dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive and that is smaller than a thickness of the lower conductor layer. A surface roughness in maximum height of a top surface of the flattening film is smaller than that of the top surface of the lower conductor layer and equal to or smaller than the thickness of the dielectric film. | 10-01-2009 |
20100116535 | Thin-film device including a terminal electrode connected to respective end faces of conductor layers - A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer that is not used to form a passive element, and an upper conductor layer used to form the passive element. The upper and lower conductor layers include respective lead electrode portions that have respective end faces located at the side surfaces of the device main body. At the side surfaces of the device main body, the end face of the lead electrode portion of the lower conductor layer and the end face of the lead electrode portion of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch these end faces and are thereby connected to the upper and lower conductor layers. | 05-13-2010 |
20100246090 | THIN FILM CAPACITOR - To provide a thin film capacitor having a device structure for suppressing peeling between an insulating film and a substrate. A thin film capacitor | 09-30-2010 |
20120247423 | AUTOMATIC CHOKE APPARATUS FOR ENGINE - There is provided an automatic choke apparatus for an engine. A bimetal that is coupled to a choke valve of an intake system is provided in the vicinity of an outer wall face of a muffler. The muffler is divided into a first expansion chamber and a second expansion chamber across a partition plate. An exhaust hole that allows the expansion chambers to be communicated with each other is formed at the lower part of the partition plate. An exhaust gas is guided from the upstream first expansion chamber toward the downstream second expansion chamber through the exhaust hole. A bypass hole is formed at an upper part of the partition plate in such a manner that that the expansion chambers are communicated with each other as bypassing the exhaust hole. The bypass hole is open to the vicinity of the outer wall face opposite to the bimetal. | 10-04-2012 |
20130068196 | OPERATION DEVICE FOR ENGINE - There is the operation device for an engine. An operation device for an engine performs a throttle operation of the engine which is disposed apart from an operation unit operated by an operator. The operation device includes: a link member rotatable with respect to a base in response to an operation of the operation unit; a cam member fixed to the base, and disposed at a distance from the center of rotation of the link member, the distance changing continuously according to the angular position of the cam member around the center of rotation; a cam follower connected to the link member and configured to along the cam member; and a throttle drive member for connecting the cam follower to a throttle operation unit of the engine. | 03-21-2013 |
20140076268 | ENGINE - An engine includes: a cylinder; a first bearing that is at least partially integrally formed with the cylinder and configured to rotatably support a first shaft of a crankshaft; a second bearing that is at least partially integrally formed with the cylinder and configured to rotatably support a second shaft of the crankshaft; and a first crankcase member and a second crankcase member that include a resin-based material, and respectively constitute part and remaining part of a crankcase that houses the crankshaft. A connecting portion between the first crankcase member and the second crankcase member is continuously connected along substantially an entire length by at least one of fitting, bonding, and welding. | 03-20-2014 |
20140159517 | AXIAL GAP-TYPE POWER GENERATOR - An axial gap-type power generator has: a rotor fixed to a crankshaft of an engine; a stator fixed to a crankcase of the engine and opposing the rotor across a spacing in an axial direction; and a housing to house the rotor and the stator and to fix the stator. The stator is configured by arraying, in a peripheral direction, a plurality of coils C each configured through winding of a winding about a stator core. The housing is formed of a resin-based material. Winding ends of the coils are wired using connector fittings each of which is formed of a metal plate, is held on the housing, and has a clamp into which the winding end is inserted and clamped. | 06-12-2014 |
20140287870 | HYBRID SYSTEM OF ENGINE AND MOTOR GENERATOR - An engine is provided with an output shaft and a motor generator connection shaft of a crankshaft at ends of a crank case and adapted such that the output shaft can be connected with an external driven apparatus. A motor generator has stators relatively fixed to the crank case and a rotor coupled with the motor generator connection shaft and rotating relative to the stators. An external apparatus connection shaft is connected with the rotor and disposed at an end of the motor generator on the opposite side of the engine. A clutch is disposed between the motor generator connection shaft and the rotor. A power storage unit stores electric power generated by the motor generator and supplies the electric power to the motor generator. A controller switches between an electric power generation function and a motor function, and engages and disengages the clutch. | 09-25-2014 |