Patent application number | Description | Published |
20110057333 | METHOD FOR THE REAL-TIME MONITORING OF INTEGRATED CIRCUIT MANUFACTURE THROUGH LOCALIZED MONITORING STRUCTURES IN OPC MODEL SPACE - The present disclosure relates to a method of controlling the manufacturing of integrated circuits, comprising steps of determining parameters that are characteristic of a curve of radiation intensity applied to a semiconductor wafer through a mask, in critical zones of structures to be formed on the wafer, for each of the critical zones, placing a measuring point in a multidimensional space each dimension of which corresponds to one of the characteristic parameters, placing control points in the multidimensional space that are spread around an area delimited by the measuring points, so as to delimit an envelope surrounding the area, for each control point, defining control structures each corresponding to a control point, generating a mask containing the control structures, applying a process involving the generated mask to a semiconductor wafer, and analyzing the control structures transferred to the wafer to detect any defects therein. | 03-10-2011 |
20130146873 | Integrated Mechanical Device for Electrical Switching - An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations. | 06-13-2013 |
20130147004 | Integrated Capacitive Device Having a Thermally Variable Capacitive Value - An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances. | 06-13-2013 |
20140167908 | Integrated Mechanical Device for Electrical Switching - An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations. | 06-19-2014 |
20140191385 | Process for Producing a Metal Device Housed in a Closed Housing within an Integrated Circuit, and Corresponding Integrated Circuit - An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device. | 07-10-2014 |
20140266562 | Integrated Electrical-Switching Mechanical Device Having a Blocked State - An integrated circuit, comprising an electrical-switching mechanical device in a housing having at least one first thermally deformable assembly including a beam held in at least two different locations by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within the same first metallization level and an electrically conductive body, wherein the said first thermally deformable assembly has at least one first configuration at a first temperature and a second configuration when at least one is at a second temperature different from the first temperature, wherein the beam is at a distance from the body in the first configuration and in contact with the said body and immobilized by the said body in the second configuration and establishing or prohibiting an electrical link passing through the body and through the beam. | 09-18-2014 |
20140360851 | Electrically Controllable Integrated Switch - An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure. | 12-11-2014 |
20150014794 | Integrated Circuit Provided with a Device for Detecting its Spatial Orientation and/or a Modification of this Orientation - An integrated circuit includes a mechanical device for detection of spatial orientation and/or of change in orientation of the integrated circuit. The device is formed in the BEOL and includes an accommodation whose sides include metal portions formed within various metallization levels. A mobile metal component is accommodated within the accommodation. A monitor inside the accommodation defines a displacement area for the metal component and includes electrically conductive elements disposed at the periphery of the displacement area. The component is configured so as to, under the action of the gravity, come into contact with the two electrically conductive elements in response to a given spatial orientation of the integrated circuit. A detector is configured to detect an electrical link passing through the component and the electrically conductive elements. | 01-15-2015 |