Patent application number | Description | Published |
20110117678 | CARBON CONTAINING LOW-K DIELECTRIC CONSTANT RECOVERY USING UV TREATMENT - A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both. | 05-19-2011 |
20120036732 | SYSTEMS AND METHODS FOR AT LEAST PARTIALLY CONVERTING FILMS TO SILICON OXIDE AND/OR IMPROVING FILM QUALITY USING ULTRAVIOLET CURING IN STEAM AND DENSIFICATION OF FILMS USING UV CURING IN AMMONIA - Systems and methods for processing a substrate include supplying steam in a chamber, arranging a substrate with a deposited layer that includes silicon in the chamber, and directing UV light onto the deposited layer in the presence of the steam for a predetermined conversion period to at least partially convert the deposited layer. Systems and methods for densifying a deposited layer of a substrate include supplying ammonia in a chamber, arranging the substrate that includes the deposited layer in the chamber, and directing UV light onto the deposited layer in the presence of the ammonia for a predetermined conversion period to at least partially densify the deposited layer. | 02-16-2012 |
20140020259 | SYSTEMS AND METHODS FOR AT LEAST PARTIALLY CONVERTING FILMS TO SILICON OXIDE AND/OR IMPROVING FILM QUALITY USING ULTRAVIOLET CURING IN STEAM AND DENSIFICATION OF FILMS USING UV CURING IN AMMONIA - A processing system includes a chamber and a steam source that supplies steam in the chamber. A UV source directs UV light onto a deposited layer of a substrate in the presence of the steam from the steam source for a predetermined conversion period to at least partially convert the deposited layer. | 01-23-2014 |
20140235069 | MULTI-PLENUM SHOWERHEAD WITH TEMPERATURE CONTROL - An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate. | 08-21-2014 |
20140356549 | METHOD TO OBTAIN SiC CLASS OF FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES - Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source. | 12-04-2014 |
20150118394 | GROUND STATE HYDROGEN RADICAL SOURCES FOR CHEMICAL VAPOR DEPOSITION OF SILICON-CARBON-CONTAINING FILMS - A thin layer of a silicon-carbon-containing film is deposited on a substrate by generating hydrogen radicals from hydrogen gas supplied to a radicals generation chamber, supplying the hydrogen radicals to a substrate processing chamber separate from the substrate processing chamber via a multiport gas distributor, and reacting the hydrogen radicals therein with an organosilicon reactant introduced into the substrate processing chamber concurrently. The hydrogen radicals are allowed to relax into a ground state in a radicals relaxation zone within the substrate processing chamber before reacting with the organosilicon reactant. | 04-30-2015 |
20150221519 | VACUUM-INTEGRATED HARDMASK PROCESSES AND APPARATUS - Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography. | 08-06-2015 |
20150249013 | CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TRANSISTORS - Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon nitride material, a silicon carbonitride material, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor. Also disclosed herein are multi-station substrate processing apparatuses for doping the fin-shaped channel regions of partially fabricated 3-D transistors. | 09-03-2015 |