Patent application number | Description | Published |
20130216821 | HEAT TREATED CERAMIC SUBSTRATE HAVING CERAMIC COATING AND HEAT TREATMENT FOR COATED CERAMICS - A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking. | 08-22-2013 |
20130273327 | CERAMIC COATED ARTICLE AND PROCESS FOR APPLYING CERAMIC COATING - To manufacture a ceramic article, a ceramic body comprising Al | 10-17-2013 |
20130284373 | PLASMA RESISTANT CERAMIC COATED CONDUCTIVE ARTICLE - To manufacture a ceramic coated article, at least one surface of a conductive article is roughened to a roughness of approximately 100 micro-inches (μin) to approximately 300 μin. The conductive article may then be heated and coated with a ceramic coating comprising a yttrium containing oxide to a thickness of approximately 10-40 mil. | 10-31-2013 |
20130288037 | PLASMA SPRAY COATING PROCESS ENHANCEMENT FOR CRITICAL CHAMBER COMPONENTS - In an optimized method to apply a plasma sprayed coating of a yttrium containing oxide onto an article, a plasma power of between about 89-91 kW is selected for a plasma spraying system. Gas is flowed through the plasma spraying system at a selected gas flow rate of about 115-130 L/min. Ceramic powder comprising a yttrium containing oxide is fed into the plasma spraying system at a selected powder feed rate of about 10-30 g/min. A yttrium dominant ceramic coating is then formed on the article based on the selected power, the selected gas flow rate and the selected powder feed rate. | 10-31-2013 |
20140030533 | INNOVATIVE TOP-COAT APPROACH FOR ADVANCED DEVICE ON-WAFER PARTICLE PERFORMANCE - To manufacture a coating for an article for a semiconductor processing chamber, the coating is applied to the article by a method including applying a sol-gel coating of Y | 01-30-2014 |
20140154465 | SUBSTRATE SUPPORT ASSEMBLY HAVING A PLASMA RESISTANT PROTECTIVE LAYER - A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising Y | 06-05-2014 |
20140363596 | RARE-EARTH OXIDE BASED EROSION RESISTANT COATINGS FOR SEMICONDUCTOR APPLICATION - An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y | 12-11-2014 |
20140377504 | PLASMA EROSION RESISTANT RARE-EARTH OXIDE BASED THIN FILM COATINGS - An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y | 12-25-2014 |
20150021324 | ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED COATINGS ON LIDS AND NOZZLES - A method of manufacturing an article comprises providing a lid or nozzle for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the lid or nozzle, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of 10 micro-inches or less. | 01-22-2015 |
20150024155 | ION ASSISTED DEPOSITION FOR RARE-EARTH OXIDE BASED THIN FILM COATINGS ON PROCESS RINGS - A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 μm and an average surface roughness of less than 6 micro-inches. | 01-22-2015 |
20150064450 | ANODIZATION ARCHITECTURE FOR ELECTRO-PLATE ADHESION - To manufacture a chamber component for a processing chamber a first anodization layer is formed on a metallic article with impurities, the first anodization layer having a thickness greater than about 100 nm, and an aluminum coating is formed on the first anodization layer, the aluminum coating being substantially free from impurities. A second anodization layer can be formed on the aluminum coating. | 03-05-2015 |
20150075714 | PLASMA SPRAY COATING ENHANCEMENT USING PLASMA FLAME HEAT TREATMENT - A method for forming a plasma resistant ceramic coating on an article includes placing the article into a chamber or spray cell of a plasma spraying system. A ceramic powder is then fed into the plasma spraying system at a powder feed rate, and a plasma resistant ceramic coating is deposited onto at least one surface of the article in a plasma spray process by the plasma spray system. The plasma spray system is then used to perform an in-situ plasma flame heat treatment of the plasma resistant ceramic coating to form crust on the plasma resistant ceramic coating. | 03-19-2015 |
20150079370 | COATING ARCHITECTURE FOR PLASMA SPRAYED CHAMBER COMPONENTS - A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. A plasma spray thin film, plasma spray chemical vapor deposition or plasma spray physical vapor deposition process is then performed by the low pressure plasma spraying system to deposit a second plasma resistant layer on the first plasma resistant layer, the second plasma resistant layer having a thickness of less than 50 microns and a porosity of less than 1%. | 03-19-2015 |