Patent application number | Description | Published |
20090017326 | Method for forming an acoustic mirror with reduced metal layer roughness and related structure - According to an exemplary embodiment, a method of forming a metal layer having reduced roughness includes a step of forming a seed layer over a dielectric layer. The method further includes a step of forming the metal layer over the seed layer. The seed layer causes a top surface of the metal layer to have reduced roughness. The seed layer and the metal layer can be formed in a same process chamber or in different process chambers. The dielectric layer, the seed layer, and the metal layer having reduced roughness can be utilized in an acoustic mirror structure. | 01-15-2009 |
20090045703 | Bulk acoustic wave structure with aluminum cooper nitride piezoelectric layer and related method - According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer. | 02-19-2009 |
20090045704 | Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure - According to an exemplary embodiment, a method of forming a multi-layer electrode for growing a piezoelectric layer thereon includes a step of forming a high conductivity metal layer over a substrate. The method further includes a step of forming a seed layer over the high conductivity metal layer. The method further includes a step of forming a high density metal layer over the seed layer. The method further includes a step of forming a piezoelectric layer over the high density metal layer. The high conductivity metal layer, the seed layer, and the high density metal layer form the multi-layer electrode on which the piezoelectric layer is grown. | 02-19-2009 |
20090267453 | BULK ACOUSTIC WAVE RESONATOR WITH CONTROLLED THICKNESS REGION HAVING CONTROLLED ELECTROMECHANICAL COUPLING - According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator. | 10-29-2009 |
20090267457 | Bulk acoustic wave resonator with reduced energy loss - According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer having a disrupted texture region, where the disrupted texture region is situated in a controlled thickness region of the BAW resonator. The BAW resonator further includes lower and upper electrodes situated on opposite surfaces of the piezoelectric layer. The controlled thickness region has controlled electromechanical coupling and includes a segment of material situated over the upper electrode. The segment of material can be a metal or a dielectric material. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator. | 10-29-2009 |
20100068831 | Method for wafer trimming for increased device yield - According to an exemplary embodiment, a method for site-specific trimming of a wafer to provide a target parameter value for a plurality of devices on the wafer includes performing a first measurement of a parameter at a subset of the number of devices on the wafer. The method further includes forming a top layer over the wafer after performing the first measurement. The method further includes performing a second measurement of the parameter at the subset of the devices on the wafer after forming the top layer. The method further includes determining an amount of the top layer to remove across the wafer to provide the target parameter value for the devices by utilizing the first and second measurements of the parameter. The method can be utilized to, for example, achieve a more uniform characteristic frequency for bulk acoustic wave (BAW) filters. | 03-18-2010 |
20100231329 | BAW STRUCTURE WITH REDUCED TOPOGRAPHIC STEPS AND RELATED METHOD - According to one embodiment, a method of forming a segment of a layer of material, where the segment of the layer of material has at least one tapered sidewall, is disclosed, where the method includes forming a mask over the layer of material. The method includes etching the mask and the layer of material in an etch process by controlling an etch rate of the mask and an etch rate of the layer of material so as to form the segment of the layer of material with the at least one tapered sidewall. A first etch chemistry is used to etch the mask and a second etch chemistry is used to etch the layer of material. The etch rates of the mask and the layer of material can be controlled by controlling a ratio of the first and second etch chemistries. The method can be utilized to fabricate BAW structures. | 09-16-2010 |
20130342284 | BULK ACOUSTIC WAVE STRUCTURE WITH ALUMINUM COPPER NITRIDE PIEZOELECTRIC LAYER AND RELATED METHOD - According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer. | 12-26-2013 |