Patent application number | Description | Published |
20120001142 | CARBON-BASED MEMORY ELEMENT - One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material. | 01-05-2012 |
20130105286 | ELECTROMECHANICAL SWITCH DEVICE AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20130135924 | PROGRAMMING OF PHASE-CHANGE MEMORY CELLS - Methods and apparatus are provided for programming a phase-change memory cell having s>2 programmable cell states. At least one control signal is applied to produce a programming pulse for programming the cell. At least one control signal is varied during the programming pulse to shape the programming pulse in dependence on the cell state to be programmed and produce a selected one of a plurality of programming pulse waveforms corresponding to respective programming trajectories for programming the cell states. The selected programming pulse waveform corresponds to a programming trajectory containing the cell state to be programmed. | 05-30-2013 |
20130166994 | READ/WRITE OPERATIONS IN SOLID-STATE STORAGE DEVICES - Methods and apparatus are provided for reading and writing data in q-level cells of solid-state memory, where q>2. Input data is encoded into codewords having N q | 06-27-2013 |
20130214239 | METHOD FOR MANUFACTORING A CARBON-BASED MEMORY ELEMENT AND MEMORY ELEMENT - A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material. | 08-22-2013 |
20130227380 | READ-DETECTION IN SOLID-STATE STORAGE DEVICES - A method for detecting codewords of a length-N, q | 08-29-2013 |
20130322156 | READ MEASUREMENT OF RESISTIVE MEMORY CELLS - A method for read measurement of resistive memory cells having s≧2 programmable cell-states includes applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the initial voltage; determining a read voltage for the cell in dependence on the measurement; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement; wherein the read voltages for cells are determined in such a manner that the cell-state metric exhibits a desired property. | 12-05-2013 |
20130322157 | READ MEASUREMENT OF RESISTIVE MEMORY CELLS - A method for read measurement of resistive memory cells having s≧2 programmable cell-states includes applying to each cell at least one initial voltage and making a measurement indicative of cell current due to the initial voltage; determining a read voltage for the cell in dependence on the measurement; applying the read voltage to the cell; making a read measurement indicative of cell current due to the read voltage; and outputting a cell-state metric dependent on the read measurement; wherein the read voltages for cells are determined in such a manner that the cell-state metric exhibits a desired property. | 12-05-2013 |