Patent application number | Description | Published |
20090114148 | METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS - A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method. | 05-07-2009 |
20090191339 | METAL CHLORIDE SEEDED GROWTH OF ELECTRONIC AND OPTICAL MATERIALS - A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal. | 07-30-2009 |
20100024719 | TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH - A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber. | 02-04-2010 |
20100303468 | White Light Emitting Device Based on Polariton Laser - A high-efficiency white-light-emitting device that includes a polariton light emitter that emits UV or blue light to a down-converting material that converts the polariton emissions to white light. The polariton light emitter includes an active region situated within a resonant optical cavity formed on a substrate. The down-converting material can comprise a luminophoric phosphor or other material. The polariton light and down-converting material can be arranged in a single apparatus to provide a white-light-emitting device that can be used for lighting and instrumentation. The device can also be configured for high-frequency modulation to provide optical signals for communications and control systems. | 12-02-2010 |
20100316342 | PHOTONIC CRYSTAL BASED OPTICAL MODULATOR INTEGRATED FOR USE IN ELECTRONIC CIRCUITS - A photonic crystal based optical modulator that is capable of being integrated with electronic circuits on a chip. An optical modulator is formed by using a substrate, an optical buffer layer, and optical waveguide layer and providing photonic crystal regions in the optical waveguide layer. Improved strength and durability of the optical modulator is achieved by using an electrode island to limit the suspended area to the minimum required by the photonic crystal waveguides. | 12-16-2010 |
20100327322 | Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control - High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region. | 12-30-2010 |
20110045281 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SIC - A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm | 02-24-2011 |
20110123425 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 05-26-2011 |
20120068189 | Method for Vertical and Lateral Control of III-N Polarity - Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate. | 03-22-2012 |
20130017323 | Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposition of DielectricsAANM Garces; NelsonAACI AlexandriaAAST VAAACO USAAGP Garces; Nelson Alexandria VA USAANM Wheeler; Virginia D.AACI AlexandriaAAST VAAACO USAAGP Wheeler; Virginia D. Alexandria VA USAANM Gaskill; David KurtAACI AlexandriaAAST VAAACO USAAGP Gaskill; David Kurt Alexandria VA USAANM Eddy, JR.; Charles R.AACI ColumbiaAAST MDAACO USAAGP Eddy, JR.; Charles R. Columbia MD USAANM Jernigan; Glenn G.AACI WaldorfAAST MDAACO USAAGP Jernigan; Glenn G. Waldorf MD US - Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al | 01-17-2013 |
20130161641 | TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND THRESHOLD VOLTAGE CONTROL - High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region. | 06-27-2013 |
20130186326 | GaN Whiskers and Methods of Growing Them from Solution - Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient. | 07-25-2013 |
20130302997 | Preparation of Epitaxial Graphene Surfaces for Atomic Layer Deposition of Dielectrics - Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al | 11-14-2013 |
20130306988 | DIAMOND AND DIAMOND COMPOSITE MATERIAL - A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate. | 11-21-2013 |
20130306989 | DIAMOND AND DIAMOND COMPOSITE MATERIAL - A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate. | 11-21-2013 |
20130334666 | Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures - Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase. | 12-19-2013 |
20140141580 | TRANSISTOR WITH ENHANCED CHANNEL CHARGE INDUCING MATERIAL LAYER AND THRESHOLD VOLTAGE CONTROL - High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region. | 05-22-2014 |
20140190399 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS - A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas. | 07-10-2014 |
20140193965 | REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS - A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas. | 07-10-2014 |
20140255705 | Growth of Crystalline Materials on Two-Dimensional Inert Materials - A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. | 09-11-2014 |
20140264380 | Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material - A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET. | 09-18-2014 |
20140308437 | Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Dielectrics - Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as Al | 10-16-2014 |