Patent application number | Description | Published |
20080267325 | Ultra-wideband transceiver - The processing of information signals is described in an Ultra Wideband (UWB) transceiver. The transceiver has both transmission and receiver paths for processing information signals. In the receiver path, broadcast RF signals are converted to a zero intermediate frequency (IF) signal using a reference signal from a phase-locked loop (PLL) that can selectively provide a reference signal corresponding to the center frequencies of a plurality of signal band groups. The IF signal is then selectively modulated into the baseband signal to be digitized for presentation. In the transmission path, the in-coming digital signals are converted to analog baseband signals and selectively modulated into their own zero IF signals. Using the same PLL of the receiver path, the zero IF signals are modulated into the transmission RF signals directed to the target signal band of the target signal band group. | 10-30-2008 |
20100164069 | Reducing High-Frequency Signal Loss in Substrates - An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region. | 07-01-2010 |
20100264509 | Enhanced Transmission Lines for Radio Frequency Applications - An integrated circuit structure includes a semiconductor substrate of a first conductivity type; a depletion region in the semiconductor substrate; and a deep well region substantially enclosed by the depletion region. The deep well region is of a second conductivity type opposite the first conductivity type, and includes a first portion directly over the deep well region and a second portion directly under the deep well region. A transmission line is directly over the depletion region. | 10-21-2010 |
20110265051 | Method for Substrate Noise Analysis - In accordance with an embodiment, a method for substrate noise analysis comprises using a first processor based system, creating and simulating a circuit schematic comprising a multi-terminal model of a transistor, and thereafter, creating a layout based on properties represented in the circuit schematic and simulation results of the simulating. The multi-terminal model comprises a source terminal, a gate terminal, a drain terminal, a body terminal, and a guard-ring terminal. | 10-27-2011 |
20120043590 | Linear-Cap Varactor Structures for High-Linearity Applications - A device includes a well region over a substrate, and a heavily doped well region over the well region, wherein the well region and the heavily doped well region are of a same conductivity type. A gate dielectric is formed on a top surface of the heavily doped well region. A gate electrode is formed over the gate dielectric. A source region and a drain region are formed on opposite sides of the heavily doped well region. The source region and the drain region have bottom surfaces contacting the well region, and wherein the source region and the drain region are of opposite conductivity types. | 02-23-2012 |
20120074515 | Noise Decoupling Structure with Through-Substrate Vias - A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate. | 03-29-2012 |
20120095715 | In-Situ RC-Calibration Scheme for Active RC Filter - A method of calibrating a filter includes applying an input signal into the filter to generate an output signal, measuring a phase difference between the input signal and the output signal; determining a leading/lagging status of the phase difference; calculating a capacitor code (CAP_CODE) using the leading/lagging status; and calibrating the capacitor using the CAP_CODE. | 04-19-2012 |
20120104575 | Slot-Shielded Coplanar Strip-line Compatible with CMOS Processes - A strip-line includes a ground plane extending through a plurality of dielectric layers over a substrate; a signal line over the substrate and on a side of the ground plane; a first plurality of metal strips under the signal line and in a first metal layer, wherein the first plurality of metal strips is parallel to each other, and is spaced apart from each other by spaces; and a second plurality of metal strips under the signal line and in a second metal layer over the first metal layer. The second plurality of metal strips vertically overlaps the spaces. The first plurality of metal strips is electrically coupled to the second plurality of metal strips through the ground plane, and no via physically contacts the first plurality of metal strips and the second plurality of metal strips. | 05-03-2012 |
20120112314 | Low Cost Metal-Insulator-Metal Capacitors - A device includes a top metal layer over a substrate; a copper-containing metal feature in the top metal layer; a passivation layer over the top metal layer; and a capacitor. The capacitor includes a bottom electrode including at least a portion in the first passivation layer, wherein the bottom electrode includes aluminum; an insulator over the bottom electrode; and a top electrode over the insulator. | 05-10-2012 |
20120133446 | Quadrature Voltage Controlled Oscillator Including Transmission Line - A circuit includes an oscillator circuit including a first oscillator and a second oscillator. The first and the second oscillators are configured to generate signal having a same frequency and different phases. A transmission line is coupled between the first and the second oscillators. | 05-31-2012 |
20120161285 | Reducing High-Frequency Signal Loss in Substrates - An integrated circuit structure includes a semiconductor substrate of a first conductivity type; and a depletion region in the semiconductor substrate. A deep well region is substantially enclosed by the depletion region, wherein the deep well region is of a second conductivity type opposite the first conductivity type. The depletion region includes a first portion directly over the deep well region and a second portion directly under the deep well region. An integrated circuit device is directly over the depletion region. | 06-28-2012 |
20120286836 | Built-in Self-test Circuit for Voltage Controlled Oscillators - A built-in self-test circuit for testing a voltage controlled oscillator comprises a voltage controlled oscillator, a buffer having an input coupled to an output of the voltage controlled oscillator and a radio frequency peak detector coupled to the output of the buffer. The radio frequency peak detector is configured to receive an ac signal from the voltage controlled oscillator and generate a dc value proportional to the ac signal at an output of the radio frequency peak detector. Furthermore, the output of the radio frequency peak detector generates a dc value proportional to an amplitude of the ac signal from the voltage controlled oscillator when the voltage controlled oscillator functions correctly. On the other hand, the output of the radio frequency peak detector is at zero volts when the voltage controlled oscillator fails to generate an ac signal. | 11-15-2012 |
20120286888 | Switched Capacitor Array for Voltage Controlled Oscillator - A system comprises a voltage controlled oscillator comprising an inductor and a variable capacitor and a switched capacitor array connected in parallel with the variable capacitor. The switched capacitor array further comprises a plurality of capacitor banks wherein a thermometer code is employed to control each capacitor bank. In addition, the switched capacitor array provides N tuning steps for the oscillation frequency of the voltage controlled oscillator when the switched capacitor array is controlled by an n-bit thermometer code. | 11-15-2012 |
20130154011 | Methods and Apparatus for Reduced Gate Resistance FinFET - Methods and apparatus for reduced gate resistance finFET. A metal gate transistor structure is disclosed including a plurality of semiconductor fins formed over a semiconductor substrate, the fins being arranged in parallel and spaced apart; a metal containing gate electrode formed over the semiconductor substrate and overlying a channel gate region of each of the semiconductor fins, and extending over the semiconductor substrate between the semiconductor fins; an interlevel dielectric layer overlying the gate electrode and the semiconductor substrate; and a plurality of contacts disposed in the interlevel dielectric layer and extending through the interlevel dielectric layer to the gate electrode; a low resistance metal strap formed over the interlevel dielectric layer and coupled to the gate electrode by the plurality of contacts; wherein the plurality of contacts are spaced apart from the channel gate regions of the semiconductor fins. Methods for forming the reduced gate finFET are disclosed. | 06-20-2013 |
20130288443 | Methods for Reduced Gate Resistance FINFET - Methods for forming reduced gate resistance finFETs. Methods for a metal gate transistor structure are disclosed including forming a plurality of semiconductor fins formed over a semiconductor substrate, the fins being arranged in parallel and spaced apart; a metal containing gate electrode formed over the semiconductor substrate and overlying a channel gate region of each of the semiconductor fins, and extending over the semiconductor substrate between the semiconductor fins; an interlevel dielectric layer overlying the gate electrode and the semiconductor substrate; and a plurality of contacts disposed in the interlevel dielectric layer and extending through the interlevel dielectric layer to the gate electrode; a low resistance metal strap formed over the interlevel dielectric layer and coupled to the gate electrode by the plurality of contacts; wherein the plurality of contacts are spaced apart from the channel gate regions of the semiconductor fins. Additional methods are disclosed. | 10-31-2013 |
20140049329 | DIVIDER-LESS PHASE LOCKED LOOP (PLL) - One or more techniques and systems for a divider-less phase locked loop (PLL) and associated phase detector (PD) are provided herein. In some embodiments, a pulse phase detector (pulse | 02-20-2014 |
20140055155 | Method and Apparatus for RFID Tag Testing - A semiconductor wafer includes a plurality of dies and at least one test probe. Each of the plurality of dies includes a radio frequency identification (RFID) tag circuit. The at least one test probe includes a plurality of probe pads. The plurality of probe pads is configured to transmit power signals and data to each of the plurality of dies, and to receive test results from each of the plurality of dies. The data are transmitted to each of the plurality of dies in a serial manner. The test results of each of the plurality of dies are also transmitted to the plurality of probe pads in a serial manner. | 02-27-2014 |
20140145749 | METHOD AND APPARATUS OF RFID TAG CONTACTLESS TESTING - A semiconductor wafer includes a plurality of dies. Each of the plurality of dies includes a radio frequency identification (RFID) tag circuit and a coil. The RFID tag circuit includes a tag core, an RF front-end circuit, an ID decoder, a comparator and conductive line for a unique ID. The RF front-end circuit is configured to receive electromagnetic signals through the coil in each of the plurality of dies and to convert the received electromagnetic signals into commands. The ID decoder is configured to receive the commands and to generate an expect ID. The comparator is configured to compare the unique ID with the expect ID to generate a comparison result. The comparison result is arranged to decide if the tag core is configured to receive commands. | 05-29-2014 |
20140184363 | Electronic Device with Switched-Capacitor Tuning and Related Method - An electronic device includes an inductive element, and variable capacitors. Each variable capacitor includes: first and third capacitors, both having a first terminal electrically connected to a first terminal of the inductive element; and second and fourth capacitors, both having a first terminal electrically connected to a second terminal of the inductive element. A first switch circuit electrically connects or isolates a second terminal of the first capacitor to/from a second terminal of the second capacitor. A second switch circuit electrically connects or isolates a second terminal of the third capacitor to/from a second terminal of the fourth capacitor. A third switch circuit electrically connects or isolates the second terminal of the first capacitor to/from the second terminal of the fourth capacitor. A fourth switch circuit electrically connects or isolates the second terminal of the third capacitor to/from the second terminal of the second capacitor. | 07-03-2014 |
20140264628 | Multi-Gate and Complementary Varactors in FinFET Process - A varactor includes at least one semiconductor fin, a first gate, and a second gate physically disconnected from the first gate. The first gate and the second gate form a first FinFET and a second FinFET, respectively, with the at least one semiconductor fin. The source and drain regions of the first FinFET and the second FinFET are interconnected to form the varactor. | 09-18-2014 |
20140264635 | RF Switch on High Resistive Substrate - A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch. | 09-18-2014 |
20150015346 | Electronic Device with Switched-Capacitor Tuning and Related Method - A device comprises a first variable capacitance block comprising four first capacitors, a second variable capacitance block comprising four second capacitors, wherein the second capacitors are arranged in a same configuration as the first capacitors, a third variable capacitance block comprising four third capacitors, a fourth variable capacitance block comprising four fourth capacitors, and wherein the fourth capacitors are arranged in a same configuration as the third capacitors, a first switch coupled between the first variable capacitance block and the second variable capacitance block, a second switch coupled between the third variable capacitance block and the fourth variable capacitance block, a third switch coupled between the first variable capacitance block and the fourth variable capacitance block and a fourth switch coupled between the third variable capacitance block and the second variable capacitance block. | 01-15-2015 |