Patent application number | Description | Published |
20080246149 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING DEVICE ISOLATION FILM OF SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises growing a carbon nano tube (CNT) in a contact hole to form a contact plug, thereby preventing diffusion of a tungsten layer. The method does not require forming a titanium nitride (TiN) film deposited to improve an adhesive strength. The CNT has an excellent electric conductivity and a high mechanical strength to improve characteristics of the device. | 10-09-2008 |
20090273025 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices. | 11-05-2009 |
20100029018 | METHOD FOR REPAIR OF SEMICONDUCTOR DEVICE - The present invention relates to a method for repairing a semiconductor device. The method includes cutting a fuse without creation of residue by transforming the fuse into a nonconductor of high resistance by oxidizing the fuse by irradiating the fuse with an oxygen ion beam instead of a laser in a blowing process. The method includes transforming a fuse corresponding to a defective cell among a plurality of fuses formed in an upper portion of a semiconductor substrate into an oxide film. | 02-04-2010 |
20100062594 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - In accordance with an embodiment of the invention the method of manufacturing a semiconductor device is capable of forming a semiconductor substrate having an embossing structure. The method includes forming a layer having a plurality of hemispherical single crystal silicon elements, and forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements, thereby, increasing a length of an effective channel of a transistor. | 03-11-2010 |
20100197084 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises forming an insulating layer on a polymer substrate, growing a germanium layer on the insulating layer, forming a gate pattern on the germanium layer, forming a metal layer on the germanium layer including the gate pattern, annealing the metal layer to form a compound layer mixed with the metal layer and the germanium layer, and forming a contact by etching the metal layer. | 08-05-2010 |
20100224955 | FUSES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - Devices and methods are disclosed a dielectric interlayer made of materials capable of forming tensile force is formed over a semiconductor substrate, and a fuse metal having stronger tensile force than the first dielectric interlayer is formed over the first dielectric interlayer. Accordingly, formation of fuse residues when blowing a fuse can be prevented. Furthermore, energy and a spot size of a laser applied when blowing a fuse can be reduced. Moreover, damage to neighboring fuses can be prevented, and a fuse made of materials that are difficult to blow the fuse can be cut. Further, since polymer-series materials are used as a dielectric interlayer, the coupling effect between wiring lines can be reduced considerably. | 09-09-2010 |
20100270603 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises gates comprising a first conductive layer, landing plug contacts formed adjacent to the gate and formed of a second conductive layer, a bit line formed over the landing plug contacts and formed of a third conductive layer, and storage electrode contacts formed over the landing plug contacts and the bit line and formed of a fourth conductive layer. The first conductive layer, the second conductive layer, the third conductive layer, and the fourth conductive layer are made of the same material. | 10-28-2010 |
20110003453 | MANUFACTURING METHOD OF CAPACITOR IN SEMICONDUCTOR - A manufacturing method of a capacitor of a semiconductor device includes a first step of forming a graphene seed film over a substrate; a second step of increasing surface energy of the graphene seed film and performing a first plasma process to the graphene seed film; a third step of growing a graphene on the graphene seed film; a fourth step of growing a nano tube or a nano wire using the graphene as a mask; and a fifth step of sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire. | 01-06-2011 |
20110085365 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate including a cell area and a sense amplifier area, a first bit line connected to a bit line contact of the cell area and a first contact of the sense amplifier area, and a second bit line located on the first bit line to overlap with the first bit line on a plan view and connected to a second contact of the sense amplifier area. The semiconductor device applies a folded bit line structure to a 6F2 structure so as to promote competitiveness of a net die, resulting in reduction of production costs. The semiconductor device implements various test patterns for defect analysis, wherein a conventional 6F2-layout open bit line has difficulty in using the test patterns, resulting in an increased production yield. The semiconductor device reduces noise of a sense amplifier, and performs mat-basis repairing, resulting in an increased production yield. | 04-14-2011 |
20110260240 | Semiconductor Device - Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices. | 10-27-2011 |
20140008759 | FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A fuse of a semiconductor device and a method for forming the same are disclosed. The fuse includes a first metal line formed over a semiconductor substrate, a second metal line spaced apart from the first metal line, and a contact fuses formed of a metal contact coupled to the first metal line and the second metal line. Upper parts of the contact fuses overlap with each other, and lower parts are spaced apart from each other. Since the fuse is formed of a metal contact, fuse oxidation and fuse movement can be prevented. A conventional metal-contact fabrication process can be used, so that mass production of semiconductor devices is possible. In addition, the fuse region is reduced in size, reducing production costs. | 01-09-2014 |
20140061802 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An antifuse of a semiconductor device includes a semiconductor substrate including a device isolation layer and an active region, a gate structure extending across an interface between the device isolation layer and the active region, a contact coupled to at least a portion of a sidewall of the gate structure, and a metal interconnection provided on the contact and gate structure. | 03-06-2014 |