Patent application number | Description | Published |
20100159687 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 06-24-2010 |
20110014783 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 01-20-2011 |
20110175231 | Semiconductor Device Having Electrode and Manufacturing Method Thereof - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 07-21-2011 |
20120205198 | EMERGENCY STOP DEVICE FOR ELEVATORS - An emergency stop device for elevators which actuates when an abnormal speed in both ascending and descending directions of a car is detected by one governor. The emergency stop device includes an endless governor rope to perform circulation movement in synchronization with ascent and descent of the car, a governor in an upper part of the shaft that restrains circulation movement of the governor rope when the abnormal speed is detected via the governor rope, an emergency stop device body in the car that brakes the car when the abnormal speed is detected, a swinging body swingably provided in the emergency stop device body, connected to the governor rope, that rotates when the circulation movement of the governor rope is restrained, thereby causing the emergency stop device body to actuate, and a swinging body rotation mechanism which rotates the swinging body in a prescribed direction when the governor rope between the car and the governor has become slack. | 08-16-2012 |
20130049099 | Semiconductor Device - A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section. | 02-28-2013 |
20130334592 | Semiconductor Device - A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section. | 12-19-2013 |
20150137215 | Semiconductor Device - A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section. | 05-21-2015 |
20160071858 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having improved performance. The semiconductor device includes the memory cells of a flash memory. Each of the memory cells includes a capacitor element for writing/erasing data having a gate electrode formed of a part of a floating gate electrode, and a MISFET for reading data having a gate electrode formed of another part of the floating gate electrode. The capacitor element for writing/erasing data has a p-type semiconductor region and an n-type semiconductor region which have opposite conductivity types. The length of the floating gate electrode in a gate length direction in the capacitor element for writing/erasing data is smaller than the length of the floating gate electrode in the gate length direction in the MISFET for reading data. | 03-10-2016 |
20160093499 | Method of Manufacturing Semiconductor Device - To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid. | 03-31-2016 |