Patent application number | Description | Published |
20100000877 | Method for electrochemical mechanical polishing - The present invention provides a method of electrochemical polishing of a workpiece using a polishing pad having a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm; wherein the cellular polymeric layer comprises a plurality of pores that extend through the thickness of the cellular polymeric layer from a polishing surface of the cellular polymeric layer to the conductive substrate; and wherein the plurality of pores exhibit a diameter that is smaller at the polishing surface than at the conductive substrate. | 01-07-2010 |
20110076928 | Dual-pore structure polishing pad - The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad. | 03-31-2011 |
20120171940 | Dual-Pore Structure Polishing Pad - The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad. | 07-05-2012 |
20130084702 | ACRYLATE POLYURETHANE CHEMICAL MECHANICAL POLISHING LAYER - A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G′, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 μm/min. | 04-04-2013 |
20130298472 | Forming Alkaline-Earth Metal Oxide Polishing Pad - The invention involves a method of preparing an alkaline-earth metal oxide-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric micro elements into a gas jet, the polymeric microelements having varied density, varied wall thickness and varied particle size. The method passes the polymeric microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separating the polymeric microelements with Coanda effect, inertia and gas flow resistance. Then it separates various alkaline earth metal oxide constituents from the curved wall of the Coanda block to clean the polymeric microelements. | 11-14-2013 |
20130298473 | Hollow Polymeric-Alkaline Earth Metal Oxide Composite - The invention provides a plurality of polymeric particles embedded with alkaline-earth metal oxide. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell has an outer surface and a diameter of 5 μm to 200 μm with the outer surface of the shell of the gas-filled polymeric particles having alkaline-earth metal oxide-containing particles embedded in the polymer. The alkaline-earth metal oxide-containing particles have an average particle size of 0.01 to 3 μm distributed within each of the polymeric microelements to coat less than 50 percent of the outer surface of the polymeric microelements. | 11-14-2013 |
20130303061 | Alkaline-Earth Metal Oxide-Polymeric Polishing Pad - The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements paced to coat less than 50 percent of the outer surface of the polymeric microelements. | 11-14-2013 |
20140120809 | Soft And Conditionable Chemical Mechanical Polishing Pad - A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm | 05-01-2014 |
20140256225 | Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window and Method of Polishing Therewith - A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ≦40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate. | 09-11-2014 |
20140256226 | Broad spectrum, endpoint detection window chemical mechanical polishing pad and polishing method - A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises an olefin copolymer; wherein the olefin copolymer, comprises, as initial components: ethylene, a branched or straight chain C | 09-11-2014 |
20140256231 | Multilayer Chemical Mechanical Polishing Pad With Broad Spectrum, Endpoint Detection Window - A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising a cyclic olefin addition polymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening. | 09-11-2014 |
20140256232 | Broad Spectrum, Endpoint Detection Window Multilayer Chemical Mechanical Polishing Pad - A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising, comprises an olefin copolymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening. | 09-11-2014 |
20140357163 | Multilayer Chemical Mechanical Polishing Pad Stack With Soft And Conditionable Polishing Layer - A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm | 12-04-2014 |
20140357169 | Soft And Conditionable Chemical Mechanical Polishing Pad Stack - A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm | 12-04-2014 |
20140357170 | Soft and Conditionable Chemical Mechanical Window Polishing Pad - A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm | 12-04-2014 |
20150059254 | POLYURETHANE POLISHING PAD - The invention provides a polishing pad suitable for planarizing semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of a polypropylene glycol and a toluene diisocyanate to form an isocyanate-terminated reaction product. The toluene diisocyanate has less than 5 weight percent aliphatic isocyanate; and the isocyanate-terminated reaction product having 5.55 to 5.85 weight percent unreacted NCO. The isocyanate-terminated reaction product being cured with a 4,4′-methylene-bis(3-chloro-2,6-diethylaniline) curative agent. The non-porous cured product having a tan delta of 0.04 to 0.10, a Young's modulus of 140 to 240 MPa and a Shore D hardness of 44 to 56. | 03-05-2015 |