Patent application number | Description | Published |
20110152725 | BIOMEMS SENSOR AND APPARATUSES AND METHODS THEREFOR - Electronic devices, apparatus, systems, and methods of operating and constructing the devices, apparatus, and/or systems include a wireless sensor configured to measure strain of hardware implanted in a subject. In various embodiments, temporal measurement of the hardware strain includes monitoring changes of the resonant frequency of the sensor. The sensor can be realized as an inductively powered device that operates as an all-on-chip resonator, where the components of the sensor are biocompatible. Additional apparatus, systems, and methods are disclosed. | 06-23-2011 |
20120122668 | Photocatalytic Nanocomposite Material - The present invention relates to a photocatalytic nanocomposite material, wherein the realization of the optimal wavelength for optical activation is controlled and accordingly is designed to work together with a LED operating at the wavelength for yielding the maximum efficiency. | 05-17-2012 |
20120190532 | PHOTOCATALYTIC NANOCOMPOSITE STRUCTURED WITH BORON - This invention is related to a functional inorganic-organic hybrid nanocomposite structured with boron. With the present invention, a nanosized material is obtained with enhanced UV and Visible region activity wherein metal-oxide nanoparticle combinations with boron compounds are used. | 07-26-2012 |
20150216476 | STRAIN SENSOR DEVICE WITH A BIOLOGICAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A strain sensor device having a biological substrate composed of a standalone bone graft or an isolated piece of bone that can be incorporated directly into, or attached to another piece of bone that is then implantable, in a biological subject, and a method thereof. The strain sensor device can includes a strain sensing circuit, which is composed of at least a first dielectric layer and a first conductive layer, that functions as a strain gauge. The first dielectric layer can be composed of dielectric material disposed over the biological substrate. The first conductive layer, which has a pattern, can be disposed over the first dielectric material. A bonding interface is disposed between the biological substrate and the first dielectric layer. The bonding interface can be composed of an underlayer of polydimethylsiloxane and a first interface layer. The underlayer can be disposed on the bone graft substrate. | 08-06-2015 |
Patent application number | Description | Published |
20140306179 | LIGHT-EMITTING DEVICE - A light-emitting device comprising: a hole injection layer, an electron injection layer, and a composite emitter layer including a soft material exciton donor and exciton acceptor nanoparticles substantially dispersed within the exciton donor matrix, wherein electrons from the electron injection layer and holes from the hole injection layer generate excitons in the exciton donor matrix, and the primary mechanism of photon generation at the nanoparticles is substantially through non-radiative energy transfer of the generated excitons directly into the nanoparticles. | 10-16-2014 |
20150179872 | LIGHT-EMITTING DEVICE - A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion. | 06-25-2015 |
20150183943 | COMPOSITE MATERIAL - There is herein disclosed a composite material comprising nanoparticles capped with a hydrophobic ligand dispersed within a polymer matrix. The hydrophobic ligand is a fatty acid and/or selected from (R | 07-02-2015 |
20150325742 | METHOD OF FABRICATING SEMICONDUCTOR DEVICES - Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques. Due to the small area of the islands, the stress generated between LED layer and metal islands is much less significant. Furthermore, due to the island metal plating and through the application of temporary supporting carriers the LED dies will be separated at the end of the fabrication process automatically or simply by applying slight mechanical stress or stretching the adhesive tape. This advantage avoids the metal dicing step and reduces the possibility of metal contamination and leakage current generation. Therefore, high yield and low cost will be realized using this novel method in LED production. | 11-12-2015 |