Patent application number | Description | Published |
20110026806 | Detecting Chip Alterations with Light Emission - An emission map of a circuit to be tested for alterations is obtained by measuring the physical circuit to be tested. An emission map of a reference circuit is obtained by measuring a physical reference circuit or by simulating the emissions expected from the reference circuit. The emission map of the circuit to be tested is compared with the emission map of the reference circuit, to determine presence of alterations in the circuit to be tested, as compared to the reference circuit. | 02-03-2011 |
20130009323 | INTERCONNECT STRUCTURE AND METHOD OF FABRICATING - An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material. | 01-10-2013 |
20130062732 | INTERCONNECT STRUCTURES WITH FUNCTIONAL COMPONENTS AND METHODS FOR FABRICATION - An electronic device includes an interlevel dielectric layer formed over a substrate and has a first set of openings and a second set of openings formed through the interlevel dielectric layer. The substrate includes conductive areas. A conductive contact structure is formed in the first set of openings in the interlevel dielectric layer to make electrical contact with the conductive areas of the substrate. A functional component is formed in the second set of openings in the interlevel dielectric layer and occupies a same level as the conductive contact structure. | 03-14-2013 |
20130198873 | CHIP AUTHENTICATION USING SCAN CHAINS - Methods and systems for generating a circuit identification number include determining a propagation time delay across a scan chain of known length; comparing the propagation time delay to a threshold associated with the scan chain length; storing an identifier bit based on the result of the comparison; repeating the steps of determining, comparing, and storing until a number of stored identifier bits reaches a threshold number; and outputting the stored identifier bits. | 08-01-2013 |
20130207080 | BILAYER GATE DIELECTRIC WITH LOW EQUIVALENT OXIDE THICKNESS FOR GRAPHENE DEVICES - A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer. | 08-15-2013 |
20130299988 | GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES - Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material. | 11-14-2013 |
20130302978 | METHOD OF FORMING A GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES - Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material. | 11-14-2013 |
20130345997 | INTEGRATED TIME DEPENDENT DIELECTRIC BREAKDOWN RELIABILITY TESTING - Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. | 12-26-2013 |
20140042442 | RELIABLE PHYSICAL UNCLONABLE FUNCTION FOR DEVICE AUTHENTICATION - The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device. | 02-13-2014 |
20140042627 | ELECTRONIC STRUCTURE CONTAINING A VIA ARRAY AS A PHYSICAL UNCLONABLE FUNCTION - A secure electronic structure is provided including a via array as a physical unclonable function (PUF). Specifically, the secure electronic structure includes an array of electrical contact vias located between a lower level of a first regularly spaced array of conductors and an upper level of a second regularly spaced array of conductors. Each electrical contact via of the via array is individually addressed through the first regularly spaced array of conductors in the lower level and the second regularly spaced array of conductors in the upper level and has a resistance value. Each resistance value of each electrical contact via forms a distribution of resistance values, wherein the distribution of resistance values is random. This random distribution of the resistance values of the array of electrical contact vias can be used as a physical unclonable function in the electronic structure of the present disclosure. | 02-13-2014 |
20140042628 | STRUCTURE WITH SUB-LITHOGRAPHIC RANDOM CONDUCTORS AS A PHYSICAL UNCLONABLE FUNCTION - A secure electronic structure including a plurality of sub-lithographic conductor features having non-repeating random shapes as a physical unclonable function (PUF) and an integrated circuit including the same are provided. Some of the conductor features of the plurality of conductor features form ohmic electrical contact to a fraction of regularly spaced array of conductors that are located above or beneath the plurality of conductor features having the non-repeating shapes, while other conductor features of the plurality of conductor features do not form ohmic electrical contact with any of the regularly spaced array of conductors. Thus, a unique signature of electrical continuity is provided which can be used as a PUF within an integrated circuit. | 02-13-2014 |
20140103286 | INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE - The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and at least one memory cell coupled to the at least one photovoltaic cell. When the at least one photovoltaic cell is exposed to radiation, the at least one photovoltaic cell generates a current that causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and a reactive material coupled to the at least one photovoltaic cell, wherein a current from the at least one photovoltaic cell triggers an exothermic reaction in the reactive material. | 04-17-2014 |
20140103485 | ANTIFUSE DEVICE FOR INTEGRATED CIRCUIT - The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. | 04-17-2014 |
20140103957 | REACTIVE MATERIAL FOR INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE - The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one reactive material and at least one memory cell coupled to the at least one reactive material. An exothermic reaction in the at least one reactive material causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes a substrate, at least one gate on the substrate, and a reactive material between a first well and a second well of the at least one gate. A reaction in the reactive material causes a short in the gate. | 04-17-2014 |
20140127896 | METHOD OF FORMING A GRAPHENE CAP FOR COPPER INTERCONNECT STRUCTURES - Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material. | 05-08-2014 |
20140140513 | RELIABLE PHYSICAL UNCLONABLE FUNCTION FOR DEVICE AUTHENTICATION - A method of manufacturing a secure device having a physical unclonable function includes embedding a phase change memory in the secure device, where the phase change memory includes a plurality of cells, and setting the phase change memory in a manner that results in a phase variation over the plurality of cells, wherein the phase variation is the physical unclonable function. A method for retrieving a cryptographic key from an integrated circuit, wherein the cryptographic key is stored in the integrated circuit, includes measuring a property of a phase change memory embedded in the integrated circuit, wherein the phase change memory includes a plurality of cells and the property is a function of a phase variation over the plurality of cells, deriving a signature from the property, and deriving the cryptographic key from the signature. | 05-22-2014 |
20140159040 | AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS - The present disclosure relates to secure devices having a physical unclonable function and methods of manufacturing such secure devices. One device includes at least one graphene layer representing a physical unclonable function and a measurement circuit for measuring at least one property of the at least one graphene layer. Another device includes at least a first graphene layer and a second graphene layer representing a physical unclonable function, where one of the graphene layers has been subjected to a variability enhancement such that a measurable property is different for each of the layers. A method includes providing a substrate for a secure device and providing at least one graphene layer on the substrate, the at least one graphene layer representing a physical unclonable function. The providing of the at least one graphene layer includes applying at least one variability enhancement to the at least one graphene layer. | 06-12-2014 |
20140162464 | AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS - A method of manufacturing a secure device having a physical unclonable function includes providing a first graphene layer, providing a second graphene layer and applying a variability enhancement to at least one of the first graphene layer and the second graphene layer such that a measurable property is different for each of the first graphene layer and the second graphene layer. The physical unclonable function is represented by at least the first and second graphene layers. In still another embodiment, a method of manufacturing a secure device having a physical unclonable function includes providing an integrated circuit comprising at least one graphene layer and including a measurement circuit in the integrated circuit that is configured to measure at least one property of the at least one graphene layer for authenticating the secure device. The at least one graphene layer represents the physical unclonable function. | 06-12-2014 |
20140207396 | INTEGRATED TIME DEPENDENT DIELECTRIC BREAKDOWN RELIABILITY TESTING - Systems for reliability testing include a picometer configured to measure a leakage current across a device under test (DUT); a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. | 07-24-2014 |
20140291282 | WAFER SCALE EPITAXIAL GRAPHENE TRANSFER - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer. | 10-02-2014 |
20140327468 | PHYSICAL UNCLONABLE FUNCTION GENERATION AND MANAGEMENT - Methods, systems and devices related to authentication of chips using physical physical unclonable functions (PUFs) are disclosed. In preferred systems, differentials of PUFs are employed to minimize sensitivity to temperature variations as well as other factors that affect the reliability of PUF states. In particular, a PUF system can include PUF elements arranged in series and in parallel with respect to each other to facilitate the measurement of the differentials and generation of a resulting bit sequence for purposes of authenticating the chip. Other embodiments are directed to determining and filtering reliable and unreliable states that can be employed to authenticate a chip. | 11-06-2014 |
20140327469 | PHYSICAL UNCLONABLE FUNCTION GENERATION AND MANAGEMENT - Methods, systems and devices related to authentication of chips using physical physical unclonable functions (PUFs) are disclosed. In accordance one such method, a test voltage is applied to a PUF system including a first subset of PUF elements that are arranged in series and a second subset of PUF elements that are arranged in series, where the first subset of PUF elements is arranged in parallel with respect to the second subset of PUF elements. In addition, the PUF system is measured to obtain at least one differential of states between the first subset of PUF elements and the second subset of PUF elements. Further, the method includes outputting an authentication sequence for the circuit that is based on the one or more differentials of states. | 11-06-2014 |
20140374702 | CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS - Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing. | 12-25-2014 |