Patent application number | Description | Published |
20130040056 | HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS - The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: | 02-14-2013 |
20130042790 | VAPOR DEPOSITION METHODS OF SiCOH LOW-K FILMS - Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films. | 02-21-2013 |
20130059078 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS - Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. | 03-07-2013 |
20130164947 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 06-27-2013 |
20130202794 | METAL FILM DEPOSITION - Disclosed are modified Atomic Layer Deposition processes used to deposit metal films on a substrate. | 08-08-2013 |
20130252438 | METHOD FOR THE DEPOSITION OF A RUTHENIUM-CONTAINING FILM - The invention concerns the use of the ruthenium-containing precursor having the formula | 09-26-2013 |
20130303739 | PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 11-14-2013 |
20140127913 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 05-08-2014 |
20140170861 | HAFNIUM-CONTAINING AND ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 06-19-2014 |
20140242812 | METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING - Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe | 08-28-2014 |
20140322924 | SILICON CONTAINING COMPOUNDS FOR ALD DEPOSITION OF METAL SILICATE FILMS - Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration. | 10-30-2014 |
20140335702 | PREPARATION OF CERIUM-CONTAINING PRECURSOR AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 11-13-2014 |
20150110958 | GERMANIUM- AND ZIRCONIUM-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS - Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: | 04-23-2015 |
20150176120 | SILICON- AND ZIRCONIUM-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS - Disclosed are Silicon- and Zirconium-containing precursors having one of the following formulae: | 06-25-2015 |
20150294880 | FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH - Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures. | 10-15-2015 |
Patent application number | Description | Published |
20150294880 | FLUOROCARBON MOLECULES FOR HIGH ASPECT RATIO OXIDE ETCH - Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures. | 10-15-2015 |