Patent application number | Description | Published |
20100133090 | FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage. | 06-03-2010 |
20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
20100189532 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 07-29-2010 |
20100213048 | MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet | 08-26-2010 |
20100215460 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 08-26-2010 |
20100239394 | INLINE-TYPE WAFER CONVEYANCE DEVICE - There are comprised a load chamber ( | 09-23-2010 |
20110139998 | ION BEAM GENERATOR - [Objective of the Invention] An ion beam generator, a thermal distortion in a grid assembly is reduced. | 06-16-2011 |
20110272278 | SPUTTERING APPARATUS - The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source. | 11-10-2011 |
20110297537 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member. | 12-08-2011 |
20140105709 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus including first and second chambers stacked one above the other; a first opening that is provided in a wall of the first chamber that faces the second chamber, and that allows a substrate to pass through the first opening; a second opening that is provided in a wall of the second chamber that is in communication with the first opening and that allows the substrate to pass through the second opening; an opening and closing member that is provided inside the first chamber so as to move up and down and that opens and closes the first opening; a substrate mounting member that is provided closer to the second chamber than the opening and closing member, and that moves the substrate between the first and second chambers; and a substrate processing member provided in the second chamber. | 04-17-2014 |