Patent application number | Description | Published |
20100004454 | QUINOLINIUM ION DERIVATIVES, PROCESS FOR THE PRODUCTION OF THE DERIVATIVES, PRODUCTS MADE BY USING THE SAME, AND REDUCTION AND OXIDATION METHODS WITH THE DERIVATIVES - An electron donor-acceptor dyad is provided that can provide a charge-separated state with longevity and not only high oxidizing power but also high reducing power. A compound of the present invention is a quinolinium ion derivative represented by the following formula (I), a stereoisomer or tautomer thereof, or a salt thereof: | 01-07-2010 |
20100034733 | CATALYST FOR DECOMPOSITION OF FORMIC ACID, METHOD FOR DECOMPOSING FORMIC ACID, PROCESS FOR PRODUCING HYDROGEN, APPARATUS FOR PRODUCING AND DECOMPOSING FORMIC ACID, AND METHOD FOR STORING AND GENERATING HYDROGEN - The present invention provides a catalyst for the decomposition of formic acid including a dinuclear metal complex represented by a formula (1) below, a tautomer or stereoisomer thereof, or any of their salts, | 02-11-2010 |
20100233067 | METHOD OF PRODUCING CUP-SHAPED NANOCARBON AND CUP-SHAPED NANOCARBON - A method of producing of the present invention is a method of producing a cup-shaped nanocarbon formed of graphene sheets. A nanocarbon molecule has a cup shape, a bottom surface and an upper surface thereof being opened. The method of producing of the present invention includes the following processes (A) and (B).
| 09-16-2010 |
20120171111 | PROCESS FOR PRODUCTION OF OXIDATION REACTION PRODUCT OF AROMATIC COMPOUND - The present invention provides a process for producing an oxidation reaction product of an aromatic compound, having excellent environmental load reduction performance, cost reduction performance, etc. Provided is a process for producing an oxidation reaction product of a raw material aromatic compound by reacting the raw material aromatic compound with an oxidizing agent. The process further uses an electron donor-acceptor linked molecule. The process includes the step of: reacting the electron donor-acceptor linked molecule in an electron-transfer state, the oxidizing agent, and the raw material aromatic compound, thereby generating an oxidation reaction product resulting from oxidation of the raw material aromatic compound. | 07-05-2012 |
20120321550 | MONONUCLEAR METAL COMPLEX, HYDROGENATION REDUCTION CATALYST, DEHYDROGENATION CATALYST, METHOD FOR PRODUCING HYDROGENATION REDUCTION PRODUCT, METHOD FOR PRODUCING HYDROGEN (H2), AND METHOD FOR PRODUCING DEHYDROGENATION REACTION - The present invention provides: a mononuclear metal complex that has high catalytic activity and can be used as a hydrogenation reduction catalyst that allows efficient hydrogenation reduction of a substance to be reduced; a tautomer or stereoisomer thereof; or a salt thereof. Provided is the mononuclear metal complex represented by the following formula (1), a tautomer or stereoisomer thereof; or a salt thereof. | 12-20-2012 |
20140141346 | METHOD FOR PRODUCING HYDROGEN PEROXIDE, KIT FOR PRODUCING HYDROGEN PEROXIDE, AND FUEL BATTERY - The present invention provides a method and a kit for producing hydrogen peroxide, capable of producing hydrogen peroxide at low cost. The present invention further provides a fuel battery capable of utilizing hydrogen peroxide as a low-cost fuel. The method for producing hydrogen peroxide of the present invention includes a hydrogen peroxide generation step of irradiating a reaction system containing water, a water oxidation catalyst, a transition metal complex, and oxygen (O | 05-22-2014 |
Patent application number | Description | Published |
20090212268 | FLAME RETARDANT ADDITIVE - This invention relates to a flame retardant additive which does not become slimy when brought in contact with warm water. The flame retardant additive comprises a first compound composed of a nitrogen-containing heterocycle compound and a phosphate, and this first compound is surface treated with at least one hydrophobic compound comprising an organosilicon compound. | 08-27-2009 |
20090215932 | COATING COMPOSITION FOR CAR INTERIOR MATERIAL AND CAR INTERIOR MATERIAL - A novel coating composition comprising a non-halogen flame retardant for use with car interior materials such as car seats, car mats, and ceiling materials is provided. This coating composition has physical properties comparable to those of the coating agents comprising a conventional halogen flame retardant, and has solved the problems of insufficient heat resistance and warm water resistance associated with the ammonium polyphosphate having its surface treated with a functional group-containing organosilicon resin. A car interior material coated with this coating composition is also provided. The coating composition comprises a synthetic resin emulsion prepared by adding 1 to 300 parts by weight of at least one non-halogen flame retardant per 100 parts by weight of the solid content of the synthetic resin emulsion, wherein the non-halogen flame retardant comprises particles of a compound composed of a nitrogen-containing heterocycle compound and a phosphate coated on their surface with a functional group-containing organosilicon resin. | 08-27-2009 |
20150337151 | INK COMPOSITION - An ink composition comprising (A) a polyether-modified silicone having formula (I), (B) a polyether-modified silicone having formula (II), water, a water-soluble organic solvent and a colorant has excellent dispersibility, wettability, and penetrability, and is water soluble and suitable for high-speed printing. | 11-26-2015 |
20150337154 | INK COMPOSITION - An ink composition comprising (A) a polyether-modified silicone having formula (I), (B) a polyether-modified silicone having formula (II), water, a water-soluble organic solvent and a colorant has excellent wettability and penetrability and forms printed images with good color development and uniformity and without color bleeding. | 11-26-2015 |
Patent application number | Description | Published |
20110041962 | Spring steel with improved hardenability and pitting resistance - The present invention provides a spring steel that has superior hardenability, undergoes less pitting in a corrosive environment, and can achieve higher stress and toughness. More specifically, the present invention provides a high-strength and high-toughness spring steel with improved hardenability and pitting resistance, containing, in mass percent, 0.40 to 0.70% carbon, 0.05 to 0.50% silicon, 0.60 to 1.00% manganese, 1.00 to 2.00% chromium, 0.010 to 0.050% niobium, 0.005 to 0.050% aluminum, 0.0045 to 0.0100% nitrogen, 0.005 to 0.050% titanium, 0.0005 to 0.0060% boron, no more than 0.015% phosphorus and no more than 0.010% sulfur, the remainder being composed of iron and unavoidable impurities, the steel having a tensile strength of at least 1700 MPa in 400° C. tempering after quenching and a Charpy impact value of at least 40 J/cm | 02-24-2011 |
20120205013 | SPRING STEEL WITH IMPROVED HARDENABILITY AND PITTING RESISTANCE - The present invention provides a spring steel that has superior hardenability, undergoes less pitting in a corrosive environment, and can achieve higher stress and toughness. More specifically, the present invention provides a high-strength and high-toughness spring steel with improved hardenability and pitting resistance, containing, in mass percent, 0.40 to 0.70% carbon, 0.05 to 0.50% silicon, 0.60 to 1.00% manganese, 1.00 to 2.00% chromium, 0.010 to 0.050% niobium, 0.005 to 0.050% aluminum, 0.0045 to 0.0100% nitrogen, 0.005 to 0.050% titanium, 0.0005 to 0.0060% boron, no more than 0.015% phosphorus and no more than 0.010% sulfur, the remainder being composed of iron and unavoidable impurities, the steel having a tensile strength of at least 1700 MPa in 400° C. tempering after quenching and a Charpy impact value of at least 40 J/cm | 08-16-2012 |
Patent application number | Description | Published |
20140252443 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer formed above the semiconductor substrate, a first conductive layer, an inter-electrode insulating layer, and a second conductive layer sequentially stacked above the first layer, a memory film formed on an inner surface of each of a pair of through holes provided in the first conductive layer, the inter-electrode insulating layer, and the second conductive layer and extending in a stacking direction, a semiconductor layer formed on the memory film in the pair of through holes, and a metal layer formed in part of the pair of through holes and/or in part of a connection hole that is provided in the first layer and connects lower end portions of the pair of through holes, the metal layer being in contact with the semiconductor layer. | 09-11-2014 |
20140284607 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In this embodiment, a mask material is formed above a film to be processed, and a plurality of sacrifice films are formed above the mask material, each of the sacrifice films having a columnar shape. Then, a sidewall film is formed on a sidewall of the sacrifice films, and then the sacrifice films are removed. Thereafter, the sidewall films are caused to flow. In addition, a plurality of holes are formed in the mask material using the sidewall film as a mask. Then, isotropic etching is performed for the mask material to etch back the sidewall of the mask material with respect to a sidewall of the sidewall film by a first distance. Thereafter, a deposition layer is deposited inside the plurality of holes to close an opening of the plurality of holes with the deposition layer. Anisotropic etching is conducted to remove the deposition layer in the opening. | 09-25-2014 |
20140362643 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array having a plurality of electrically rewritable memory transistors arranged therein; and a control unit configured to govern control that repeats a voltage application operation and a step-up operation, the voltage application operation applying an applied voltage to a selected memory transistor to change a threshold voltage at which the selected memory transistor is conductive, and the step-up operation, in the case where a threshold voltage of the selected memory transistor has not changed to a desired value, raising the applied voltage by an amount of a certain step-up value. The control unit is configured to control the step-up operation to monotonically decrease the step-up value as the number of times of the voltage application operations increases. | 12-11-2014 |
20150036422 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, MAGNETIC MEMORY, AND METHOD OF DRIVING MAGNETIC STORAGE ELEMENT - A magnetic storage element according to an embodiment includes: a magnetic nanowire having a cross-sectional area varying in a first direction, the magnetic nanowire having at least two positions where the cross-sectional area is minimal; first and second electrode groups having the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a first region where the first electrodes overlap the second electrodes with the magnetic nanowire interposed in between and a second region where neither the first electrodes nor the second electrodes exist with the magnetic nanowire interposed in between, the magnetic nanowire including at least one of a third region where the first electrodes exist and the second electrodes do not exist with the magnetic nanowire interposed in between and a fourth region where the first electrodes do not exist and the second electrodes exist with the magnetic nanowire interposed in between. | 02-05-2015 |
Patent application number | Description | Published |
20150035037 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, the select transistor is provided between a memory array region and the layer selection portion. The channel body and the charge storage film are provided in the memory array region. The select transistor includes a gate electrode provided on a side wall of one of the line portions between the memory array region and the layer selection portion; and a gate insulator film provided between the gate electrode and the line portions. The gate electrode extends in the stacking direction. | 02-05-2015 |
20150102399 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A memory string includes: a first semiconductor layer formed in a columnar shape extending in a stacking direction perpendicular to a substrate; a tunnel insulating film formed surrounding a side surface of the first semiconductor layer; a charge accumulation film formed surrounding the tunnel insulating film and configured to be capable of accumulating charges; a block insulating film formed surrounding the charge accumulation film; and a plurality of first conductive layers formed surrounding the block insulating film and disposed at a predetermined interval in the stacking direction. The first semiconductor layer comprises carbon-doped silicon and being formed to have different carbon concentrations in upper and lower portions in the stacking direction. | 04-16-2015 |
20150206590 | MEMORY SYSTEM - According to one embodiment, a memory system includes a nonvolatile semiconductor memory device and a controller. The system includes the nonvolatile semiconductor memory device including a plurality of memory cells; and the controller configured to control one of read operation, write operation, and a use frequency of the read operation or the write operation on the nonvolatile semiconductor memory device, and configured to change controlling for a memory cell belonging to a first group of the memory cells and to change controlling for a memory cell belonging to a second group located on an upper side or a lower side of the memory cell belonging to the first group. | 07-23-2015 |
20150221665 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of insulating layers each provided between adjacent ones of the electrode layers; and a columnar portion penetrating through the stacked body and extending in a stacking direction of the stacked body. The columnar portion includes a channel body extending in the stacking direction; a charge storage film provided between the channel body and the electrode layer; and a gap provided between the charge storage film and the electrode layer. | 08-06-2015 |
20150221667 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device according to one embodiment includes a connecting member including a semiconductor material, a first electrode film, a first insulating film, a stacked body and three or more semiconductor pillars. The stacked body includes second electrode films and second insulating films that alternately stacked. The semiconductor pillars are arrayed along two or more directions, extend in a stacking direction, pierce through the stacked body and the first insulating film, and are connected to the connecting member. The device includes a third insulating film provided between the semiconductor pillars and the stacked body and between the connecting member and the first electrode film. A charge storage layer is provided at least between one of the second electrode films and the third insulating film. | 08-06-2015 |
20150263035 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a method for manufacturing a semiconductor memory device processing the first sidewall films into a plurality of island shape patterns. The method includes processing the base mask using the core material films, the first sidewall films, and the second sidewall films as masks to simultaneously form a plurality of mask slits extending in a first direction and a plurality of mask holes in the base mask. The method includes simultaneously forming a plurality of slits extending in the first direction and a plurality of holes in the stacked body using the base mask as a mask. The method includes forming a memory film and a channel body in the hole, and forming an insulating film in the slit. | 09-17-2015 |
20150263127 | SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure. | 09-17-2015 |
Patent application number | Description | Published |
20110233646 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film. | 09-29-2011 |
20120132981 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided. | 05-31-2012 |
20130113080 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The first electrode functions as an electrode at one side of a capacitive component and comprises multiple conductive layers stacked on the substrate and separated horizontally from stacked conductive layers of the second electrode which is disposed at a side of the capacitive component opposite the first electrode. | 05-09-2013 |
20130187217 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film. | 07-25-2013 |
20140231898 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film. | 08-21-2014 |
20140252450 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided. | 09-11-2014 |
20150349081 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film. | 12-03-2015 |