Patent application number | Description | Published |
20110187574 | REMOTE CONTROLLED POWER CONSUMING DEVICE AND MODULE - A power consuming device that includes a control circuitry controlling a plurality of components installed in the power consuming device comprises a communication module receiving communication signals from a remote source, and a control module including an electrical relay coupled between an external power source and the control circuitry, the control module coupled between the external power source and the communication module to provide power from the external power source to the communication module, and wherein the electrical relay is configured to transmit power from the power source to the control circuitry when the communication signals energize the electrical relay. A communication assembly utilized in a power consuming device is also described herein. | 08-04-2011 |
20120033392 | Modular Junction Box for a Photovoltaic Module - A junction box for electrically connecting a photovoltaic (PV) module to a power distribution system, the PV module having a plurality of conductors for electrically connecting the PV module to the junction box. The junction box includes a housing having a mounting side configured to be mounted on the PV module and a power transfer structure mounted within the housing. The power transfer structure includes a plurality of conductive connectors and a transfer interface. Each conductive connector forms an electrical interface to the PV module. The transfer interface couples the junction box to the power distribution system. The junction box also includes a user-removable control board mounted within the housing. The power transfer structure interfaces with said control board to convey power from the PV module to the control board. | 02-09-2012 |
20130002045 | Power Harvesting Device - Techniques are described to harvest power from a single current carrying conductor to furnish power to a powered device. The techniques employ a power harvesting device that is coupled to the conductor. In implementations, the conductor has a first path and a second path. The power harvesting device includes a first switch coupled to the second path. An energy storing element is coupled to the first path and configured to store energy based upon the direct current flowing through the first path. The power harvesting device also includes a power condition and management device coupled to the energy storing element configured to switch the first switch to a closed configuration when the energy storing element is measured to have a predefined high voltage threshold, and to switch the first switch to an open configuration when the energy storing element is measured to have a predefined low voltage threshold. | 01-03-2013 |
Patent application number | Description | Published |
20090079494 | METHOD OF OPERATING QUANTUM-MECHANICAL MEMORY AND COMPUTATIONAL DEVICES - A method of operating a quantum system comprising computational elements, including an insulated ring of superconductive material, and semi-closed rings used as an interface between the computational elements and the external world, is disclosed. In one aspect, the method comprises providing an electrical signal, e.g. a current, in an input ring magnetically coupled to a computational element, which generates a magnetic field in the computational element and sensing the change in the current and/or voltage of an output element magnetically coupled to the computational element. The electrical input signal can be an AC signal or a DC signal. The computational element is electromagnetically coupled with other adjacent computational elements and/or with the interface elements. The corresponding magnetic flux between the computational elements and/or the interface elements acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements. | 03-26-2009 |
20100117138 | NONVOLATILE MEMORY CELL COMPRISING A NONWIRE AND MANUFACTURING METHOD THEREOF - A memory cell ( | 05-13-2010 |
20110215395 | MULTI-TRANSISTOR MEMORY CELL - The invention relates to a multi-transistor, e.g. two-transistor memory cell arranged on a semiconductor substrate | 09-08-2011 |
20120086058 | TUNNEL FIELD EFFECT TRANSISTOR - A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the substrate. The transistor further includes a drain of a first conductivity type. The transistor also includes a source of a second conductivity type extending beneath the gate. The source is separated from the gate by a channel region and a gate dielectric. The transistor is operable to allow charge carrier tunnelling from an inversion layer through an upper surface of the source. | 04-12-2012 |
20120213466 | Optocoupler Circuit - An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits. | 08-23-2012 |
20120326699 | GALVANIC ISOLATION DEVICE AND METHOD - Various exemplary embodiments relate to an isolation device including a semiconductor layer and an insulation layer. The insulation layer insulates a central portion of the semiconductor layer. A high voltage terminal connects to the insulation layer, a first low voltage terminal connects to a first non-insulated portion of the semiconductor layer, and a second low voltage terminal connects to a second non-insulated portion of the semiconductor layer. The first and second low voltage terminals are electrically connected via the semiconductor layer. A voltage applied to the high voltage terminal influences the conductance of the semiconductor layer. The high voltage terminal is galvanically isolated from the first and second low voltage terminals. | 12-27-2012 |