Gregory Keith
Gregory Keith Bartley, Jr., Knoxville, TN US
Patent application number | Description | Published |
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20120094831 | Chlorella Cells as a Method for Improving Plant Quality - This invention relates to a method of improving plant quality through the foliar application of | 04-19-2012 |
Gregory Keith Dudoff, Clifton Park, NY US
Patent application number | Description | Published |
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20090242901 | SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF - The present invention provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and annealing the source region. A gate oxide layer is formed on the source region and the silicon carbide layer. The method further includes providing a gate electrode on the gate oxide layer and disposing a dielectric layer on the gate electrode and the gate oxide layer. The method further includes etching a portion of the dielectric layer and a portion of the gate oxide layer to form sidewalls on the gate electrode. A metal layer is disposed on the gate electrode, the sidewalls and the source region. The method further includes forming a gate contact and a source contact by subjecting the metal layer to a temperature of at least about 800° C. The gate contact and the source contact comprise a metal silicide. The distance between the gate contact and the source contact is less than about 0.6 μm. A vertical SiC MOSFET is also provided. | 10-01-2009 |
20130146898 | SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF - The present application provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and annealing the source region. A gate oxide layer is formed on the source region and the silicon carbide layer. The method further includes providing a gate electrode on the gate oxide layer and disposing a dielectric layer on the gate electrode and the gate oxide layer. The method further includes etching a portion of the dielectric layer and a portion of the gate oxide layer to form sidewalls on the gate electrode. A metal layer is disposed on the gate electrode, the sidewalls and the source region. The method further includes forming a gate contact and a source contact by subjecting the metal layer to a temperature of at least about 800° C. The gate contact and the source contact comprise a metal silicide. The distance between the gate contact and the source contact is less than about 0.6 μm. A vertical SiC MOSFET is also provided. | 06-13-2013 |
Gregory Keith Qualizza, Orland Park, IL US
Patent application number | Description | Published |
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20090163288 | ADJUSTABLE STIFFNESS SHAFT STRUCTURE - A shaft structure with an adjustable stiffness is provided for golf clubs, fishing rods and like apparatuses. The shaft structure employs an inner and outer shaft structure. The golfer, in practice, configures the stiffness of a golf shaft, by adjusting the pressure of an inner shaft structure. The combination of outer and inner shaft structure stiffness results in an advantageous stiffness profile. The golfer can, at any time and very easily, change the stiffness profile of the golf shaft. | 06-25-2009 |