Patent application number | Description | Published |
20080283868 | Semiconductor Device - A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones. | 11-20-2008 |
20080296774 | ARRANGEMENT INCLUDING A SEMICONDUCTOR DEVICE AND A CONNECTING ELEMENT - An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element. | 12-04-2008 |
20090032851 | Method for Producing a Semiconductor Body Having a Recombination Zone, Semiconductor Component Having a Recombination Zone, and Method for Producing Such a Semiconductor Component - In a method for producing a semiconductor body, impurities which act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body. In a semiconductor component, comprising a semiconductor body having a front surface and an opposite rear surface, and also a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centres, the surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone. | 02-05-2009 |
20090051013 | SEMICONDUCTOR WAFER FOR SEMICONDUCTOR COMPONENTS AND PRODUCTION METHOD - A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter zone for gettering impurity atoms in the semiconductor wafer. The getter zone contains oxygen precipitates. In the near-surface active zone, atoms of doping material are located on lattice vacancies. The atoms of doping material have a higher diffusion coefficient that the oxygen atoms. | 02-26-2009 |
20090087631 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20090087632 | Wafer and Method for Producing a Wafer - A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20090096027 | Power Semiconductor Device - A power semiconductor device comprising a first group of power transistor cells arranged in a first area of the power semiconductor device and a second group of power transistor cells arranged in a second area of the power semiconductor device. The first group of power transistor cells has an overall cell density different from that of the second group of power transistor cells such that the first and second groups of power transistor cells have different charge carrier densities. | 04-16-2009 |
20090130806 | POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AND METHOD FOR THE FABRICATION THEREOF - A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones. | 05-21-2009 |
20090186462 | Semiconductor device and Fabrication method - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 07-23-2009 |
20090206440 | Power Semiconductor Device - A semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity type. An edge termination zone has a junction termination extension (JTE) region of the second conductivity type, the region having portions extending away from the well region and a number of field limiting rings of the second conductivity type disposed at the upper surface in the junction termination extension region. | 08-20-2009 |
20090212322 | Vertical Semiconductor Device - A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 10 | 08-27-2009 |
20090283799 | Reduced Free-Charge Carrier Lifetime Device - According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer. | 11-19-2009 |
20100015818 | Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone - A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side. | 01-21-2010 |
20100117117 | Vertical IGBT Device - According to one embodiment, a power semiconductor device comprises a semiconductor substrate. A transistor gate structure is arranged in a trench formed in the semiconductor substrate. A body region of a first conductivity type is arranged adjacent the transistor gate structure and a first highly-doped region of a second conductivity type is arranged in an upper portion of the body region. A drift zone of the second conductivity type is arranged below the body region and a second highly-doped region of the second conductivity type is arranged below the drift zone. An end-of-range irradiation region is arranged adjacent the transistor gate structure and has a plurality of vacancies. In some embodiments, at least some of the vacancies are occupied by metals. | 05-13-2010 |
20100148215 | IGBT Having One or More Stacked Zones Formed within a Second Layer of the IGBT - An IGBT includes a first region, a second region located within the first region, a first contact coupled to the first region, a first layer arranged below the first region, a gate overlying at least a portion of the first region between the second region and the first layer and a second layer formed under the first layer. One or more stacked zones are formed within the second layer. Each one or more stacked zones includes a first zone and a second zone that overlies the first zone. Each first zone is inversely doped with respect to the second layer and each second zone is inversely doped with respect to the first zone. The IGBT further includes a third layer formed under the second layer and a second contact coupled to the third layer. | 06-17-2010 |
20100167509 | METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT - A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone. | 07-01-2010 |
20100264456 | Capacitor Structure in Trench Structures of Semiconductor Devices and Semiconductor Devices Comprising Capacitor Structures of this Type and Methods for Fabricating the Same - A capacitor structure in trench structures of a semiconductor device includes conductive regions made of metallic and/or semiconducting materials. The conducting regions are surrounded by a dielectric and form stacked layers in the trench structure of the semiconductor device. | 10-21-2010 |
20110062558 | SEMICONDUCTOR WAFER FOR SEMICONDUCTOR COMPONENTS AND PRODUCTION METHOD - A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. The rear side of the semiconductor wafer is adjoined by a getter zone for gettering impurity atoms in the semiconductor wafer. The getter zone contains oxygen precipitates. In the near-surface active zone, atoms of doping material are located on lattice vacancies. The atoms of doping material have a higher diffusion coefficient that the oxygen atoms. | 03-17-2011 |
20110079882 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-07-2011 |
20110127576 | Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method - A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping. | 06-02-2011 |
20110207310 | SEMICONDUCTOR DEVICE WITH A FIELD STOP ZONE AND PROCESS OF PRODUCING THE SAME - Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone. | 08-25-2011 |
20110275202 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 11-10-2011 |
20110300707 | Metallization and Its Use In, In Particular, an IGBT or a Diode - A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 μm and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer. | 12-08-2011 |
20120315747 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 12-13-2012 |
20130037954 | Metallization and Its Use In, In Particular, an IGBT or a Diode - A vertical power semiconductor component includes a semiconductor chip and at least one layer serving as a heat sink. The semiconductor chip has a top main surface at a front side of the semiconductor chip, wherein the top main surface is in a heat exchanging relationship with the at least one layer serving as the heat sink. This layer has a layer thickness of at least 15 μm and has a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. The component further includes metallizations between the at least one layer and the top main surface. | 02-14-2013 |
20140213022 | Method of Manufacturing a Reduced Free-Charge Carrier Lifetime Semiconductor Structure - A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies. | 07-31-2014 |