Hasimoto
Masanori Hasimoto, Yokohama JP
Patent application number | Description | Published |
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20130260762 | APPARATUS AND METHOD FOR CONTROLLING SELECTION OF A HANDOVER DESTINATION - An apparatus acquires a parameter set including first and second parameter subsets. The first parameter subset stores first throughput and first power consumption that are measured, before a handover of a mobile station, by each base-station belonging to a measurement target group including a plurality of handover-candidate base-stations and a handover-source base-station. The second parameter subset stores second throughput and second power consumption that are estimated by each base-station belonging to the measurement target group, on the assumption that the mobile station is handed over to the each base-station. The apparatus calculates, before and after the handover, for each of the plurality of handover-candidate base-stations, a total energy efficiency of a pair of the handover-source base-station and the each of the plurality of handover-candidate base-stations, based on the parameter set, and selects, from among the plurality of handover-candidate base-stations, the handover-destination base-station based on the calculated total energy efficiencies. | 10-03-2013 |
Nobuaki Hasimoto, Suwa JP
Patent application number | Description | Published |
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20140131890 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, CIRCUIT SUBSTRATE, AND ELECTRONIC APPARATUS - A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode. | 05-15-2014 |
Shin Hasimoto, Osaka JP
Patent application number | Description | Published |
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20100244048 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention comprises a silicon carbide semiconductor substrate ( | 09-30-2010 |