Hattendorf
Douglas Hattendorf, Mountain View, CA US
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20110000125 | PRODUCTION OF FATTY ALCOHOLS WITH FATTY ALCOHOL FORMING ACYL-COA REDUCTASES (FAR) - The disclosure relates to methods of producing fatty alcohols from recombinant host cells comprising genes encoding heterologous fatty acyl-CoA reductase (FAR) enzymes. The disclosure further relates to FAR enzymes and functional fragments thereof derived from marine bacterium and particularly marine gamma proteobacterium such as | 01-06-2011 |
20110082055 | REDUCED CODON MUTAGENESIS - Methods and compositions that reduce complexity of libraries of variant biological molecules, that reduce oversampling of these libraries during screening and that improve screening efficiency are provided. Sets of efficient degenerate codon sets are provided that efficiently encode all, or nearly all canonical amino acids. Degenerate oligonucleotides comprising these codons are provided, as are polynucleotide variants. Variant pooling strategies are used during library construction. Logical filtering is applied to select codon sites for mutagenesis, or to select amino acid sets to be incorporated at such sites. Methods for reducing non-optimal oversampling during screening are provided. | 04-07-2011 |
20130040352 | PRODUCTION OF FATTY ALCOHOLS WITH FATTY ALCOHOL FORMING ACYL-COA REDUCTASES (FAR) - The disclosure relates to methods of producing fatty alcohols from recombinant host cells comprising genes encoding heterologous fatty acyl-CoA reductase (FAR) enzymes. The disclosure further relates to FAR enzymes and functional fragments thereof derived from marine bacterium and particularly marine gamma proteobacterium such as | 02-14-2013 |
20140099686 | Production of Fatty Alcohols with Fatty Alcohol Forming Acyl-CoA Reductases (FAR) - The disclosure relates to methods of producing fatty alcohols from recombinant host cells comprising genes encoding heterologous fatty acyl-CoA reductase (FAR) enzymes. The disclosure further relates to FAR enzymes and functional fragments thereof derived from marine bacterium and particularly marine gamma proteobacterium such as | 04-10-2014 |
Douglas A. Hattendorf, Oakland, CA US
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20160090612 | GENE DISTRUPTANTS PRODUCING FATTY ACYL-COA DERIVATIVES - This invention provides microbial organisms, particularly yeasts such as | 03-31-2016 |
Douglas A. Hattendorf, Mountain View, CA US
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20120164686 | YEAST PROMOTERS - The invention relates to recombinant promoters and expression constructs comprising the promoters that may be used to express a protein of interest in yeast, such as | 06-28-2012 |
20120165562 | GENE DISRUPTANTS PRODUCING FATTY ACYL-COA DERIVATIVES - This invention provides microbial organisms, particularly yeasts such as | 06-28-2012 |
20150087028 | CBH1A VARIANTS - The invention relates to recombinant expression of variant forms of | 03-26-2015 |
Guido Hattendorf, Phoenix, AZ US
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20110166420 | IMAGING METHOD AND APPARATUS - An imaging apparatus and method are provided. The probe for an imaging apparatus includes a manually manipulable proximal portion; a straight distal portion with a distal tip for locating at a site to define an observational field; and a curved portion between the proximal portion and the distal portion. The imaging method includes the steps of locating a distal tip of an imaging probe at a site to define an observational field; irradiating the observational field from the distal tip; and collecting a return signal at the distal tip; wherein the probe comprises a manually manipulable proximal portion. The apparatus and method provided herein are useful for various applications including but not limited to endomicroscopy and other microsurgical procedures performed under optical stereoscopic magnified visualization, such as neurosurgery, ENT/facial surgery and spinal surgery. | 07-07-2011 |
20110178395 | IMAGING METHOD AND SYSTEM - Imaging systems and methods are provided herein. An imaging system for imaging a surgical site, may include a macroscopic visualization system; and an imaging apparatus with a probe, the imaging apparatus being adapted to image the observational field and generate second image data; wherein the system is operable to control the macroscopic visualization system and the imaging apparatus to image the site and the observational field respectively at substantially the same time, and to associate the first image data and the second image data. Imaging methods provided herein may include the steps of: imaging the site with a macroscopic visualization system and generating first image data; imaging at substantially the same time an observational field with an imaging apparatus and generating second image data; and associating the first image data and the second image data. | 07-21-2011 |
20110280810 | SURGICAL OPTICAL SYSTEMS FOR DETECTING BRAIN TUMORS - A method of detecting a brain tumor includes administering indocyanine green to a living body; exposing brain tissue in the living body; irradiating the exposed brain tissue with excitation light of indocyanine green; obtaining an image based on fluorescence of the excited indocyanine green in the brain tissue, wherein the image is obtained using an endomicroscope; and identifying portions of the brain tissue corresponding to the brain tumor based on the image. | 11-17-2011 |
20150073270 | IMAGING METHOD AND APPARATUS - An imaging apparatus and method are provided. The probe for an imaging apparatus includes a manually manipulable proximal portion; a straight distal portion with a distal tip for locating at a site to define an observational field; and a curved portion between the proximal portion and the distal portion. The imaging method includes the steps of locating a distal tip of an imaging probe at a site to define an observational field; irradiating the observational field from the distal tip; and collecting a return signal at the distal tip; wherein the probe comprises a manually manipulable proximal portion. The apparatus and method provided herein are useful for various applications including but not limited to endomicroscopy and other microsurgical procedures performed under optical stereoscopic magnified visualization, such as neurosurgery, ENT/facial surgery and spinal surgery. | 03-12-2015 |
Heike Hattendorf, Werdohl DE
Patent application number | Description | Published |
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20090285717 | Iron-Nickel-Chrome-Silicon-Alloy - Iron-nickel-chromium-silicon alloy having (in % by weight) 34 to 42% nickel, 18 to 26% chromium, 1.0 to 2.5% silicon, and additives of 0.05 to 1% Al, 0.01 to 1% Mn, 0.01 to 0.26% lanthanum, 0.0005 to 0.05% magnesium, 0.01 to 0.14% carbon, 0.01 to 0.14% nitrogen, max. 0.01% sulfur, max. 0.005% B, remainder iron and the usual impurities resulting from the production process. | 11-19-2009 |
20100059145 | METAL FOIL - The invention relates to a metal foil having (in weight %) Ni 74-90%, W 10-26%, and Al and/or Mg and/or B contents of Al >0-max. 0.02%, Mg >0-max. 0.025%, B>0-max. 0.005%. | 03-11-2010 |
20100092749 | USE OF AN IRON-CHROMIUM-ALUMINUM ALLOY WITH LONG SERVICE LIFE AND MINOR CHANGES IN HEAT RESISTANCE - Use of an iron-chromium-aluminum alloy with long service life and minor changes in heat resistance as a foil for heating elements, the foil having a thickness ranging from 0.020 to 0.300 μm. The alloy contains (in percentages by weight) 4.5-6.5% Al and 16-24% Cr, to which are added 0.05-0.7% Si, 0.001-0.5% Mn, 0.02-0.1% Y, 0.02-0.1% Zr, 0.02-0.1% Hf, 0.003-0.020% C, maximum 0.03% N, maximum 0.01% S and maximum 0.5% Cu, the remainder being iron and the usual impurities resulting from the melting process. | 04-15-2010 |
20100172790 | IRON-NICKEL-CHROMIUM-SILICON ALLOY - The invention relates to an iron-nickel-chromium-silicon alloy comprising (in wt.-%) 19 to 34% or 42 to 87% nickel, 12 to 26% chromium, 0.75 to 2.5% silicon, and additives of 0.05% to 1% Al, 0.01 to 1% Mn, 0.01 to 0.26% lanthanum, 0.0005 to 0.05% magnesium, 0.04 to 0.14% carbon, 0.02 to 0.14% nitrogen, and further comprising 0.0005 to 0.07% Ca, 0.002 to 0.020% P, a maximum of 0.01% sulfur, a maximum of 0.005% B, the remainder comprising iron and the usual process-related impurities | 07-08-2010 |
20110031235 | DURABLE IRON-CHROMIUM-ALUMINUM ALLOY SHOWING MINOR CHANGES IN HEAT RESISTANCE - An iron-chromium-aluminum alloy having a long service life and exhibiting little change in heat resistance, comprising (as percentages by weight) 4.5 to 6.5% Al, 16 to 24% Cr, 1.0 to 4.0% W, 0.05 to 0.7% Si, 0.001 to 0.5% Mn, 0.02 to 0.1% Y, 0.02 to 0.1% Zr, 0.02 to 0.1% Hf, 0.003 to 0.030% C, 0.002 to 0.03% N, a maximum of 0.01% S, and a maximum of 0.5% Cu, the remainder being iron and the usual steel production-related impurities. | 02-10-2011 |
20120145285 | METHOD FOR PRODUCING AN IRON-CHROMIUM ALLOY - The invention relates to a method for producing a component, made of an iron-chromium alloy that precipitates Laves phases and/or particles containing Fe and/or particles containing Cr and/or particles containing Si and/or carbides, by subjecting a semi-finished product made of the alloy to a thermomechanical treatment, wherein in a first step, the alloy is solution heat treated at temperatures≧the solution heat treatment temperature and is subsequently quenched in stationary protective gas or air, moving (blown) protective gas or air, or water. In a second step, a mechanical forming of the semi-finished product in a range from 0.05 to 99% is performed, and in a subsequent step, Laves phases Fe | 06-14-2012 |
20130078136 | NICKEL-BASED ALLOY - Nickel-based alloy consisting of (in % by mass) Si 0.8-2.0%, Al 0.001-0.1%, Fe 0.01-0.2%, C 0.001-0.10%, N 0.0005-0.10%, Mg 0.0001-0.08%, O 0.0001-0.010%, Mn max. 0.10%, Cr max. 0.10%, Cu max. 0.50%, S max. 0.008%, balance Ni and the usual production-related impurities. | 03-28-2013 |
20130200068 | IRON-NICKEL-CHROMIUM-SILICON ALLOY - The invention relates to an iron-nickel-chromium-silicon alloy comprising (in wt.-%) 19 to 34% or 42 to 87% nickel, 12 to 26% chromium, 0.75 to 2.5% silicon, and additives of 0.05% to 1% Al, 0.01 to 1% Mn, 0.01 to 0.26% lanthanum, 0.0005 to 0.05% magnesium, 0.04 to 0.14% carbon, 0.02 to 0.14% nitrogen, and further comprising 0.0005 to 0.07% Ca, 0.002 to 0.020% P, a maximum of 0.01% sulfur, a maximum of 0.005% B, the remainder comprising iron and the usual process-related impurities | 08-08-2013 |
20130323113 | NICKEL-CHROMIUM-IRON-ALUMINUM ALLOY HAVING GOOD PROCESSABILITY - The invention relates to a nickel-chromium-aluminum-iron alloy, comprising (in wt %) 12 to 28% chromium, 1.8 to 3.0% aluminum, 1.0 to 15% iron, 0.01 to 0.5% silicon, 0.005 to 0.5% manganese, 0.01 to 0.20% yttrium, 0.02 to 0.60% titanium, 0.01 to 0.2% zirconium, 0.0002 to 0.05% magnesium, 0.0001 to 0.05% calcium, 0.03 to 0.11% carbon, 0.003 to 0.05% nitrogen, 0.0005 to 0.008% boron, 0.0001 to 0.010% oxygen, 0.001 to 0.030% phosphorus, max. 0.010% sulfur, max. 0.5% molybdenum, max. 0.5% tungsten, the remainder nickel and the common contaminants resulting from the process, wherein the following relations must be satisfied: 7.7C−x·a<1.0, wherein a=PN if PN>0 or a=0 if PN≦0. Here, x=(1.0 Ti+1.06 Zr)/(0.251 Ti+0.132 Zr), PN=0.251 Ti+0.132 Zr−0.857 N, and Ti, Zr, N, and C are the concentration of the respective element in mass percent. | 12-05-2013 |
20140219855 | HEAT-RESISTANT IRON-CHROMIUM-ALUMINUM ALLOY WITH LOW CHROMIUM VAPORIZATION RATE AND ELEVATED THERMAL STABILITY - An iron-chromium-aluminum alloy with improved heat resistance, low chromium vaporization rate and good processability, comprising (in % by mass), 2.0 to 4.5% Al, 12 to 25% Cr, 1.0 to 4% W, 0.25 to 2.0% Nb, 0.05 to 1.2% Si, 0.001 to 0.70% Mn, 0.001 to 0.030% C, 0.0001 to 0.05% Mg, 0.0001 to 0.03% Ca, 0.001 to 0.030% P, max. 0.03% N, max. 0.01% S, remainder iron and the usual melting-related impurities. | 08-07-2014 |
20150050182 | NICKEL-CHROMIUM-ALUMINUM ALLOY HAVING GOOD PROCESSABILITY, CREEP RESISTANCE AND CORROSION RESISTANCE - A nickel-chromium-aluminum-iron alloy includes (in wt.-%) 24 to 33% chromium, 1.8 to 4.0% aluminum, 0.10 to 7.0% iron, 0.001 to 0.50% silicon, 0.005 to 2.0% manganese, 0.00 to 0.60% titanium, 0.0002 to 0.05% each of magnesium and/or calcium, 0.005 to 0.12% carbon, 0.001 to 0.050% nitrogen, 0.0001 to 0.020% oxygen, 0.001 to 0.030% phosphorus, not more than 0.010% sulfur, not more than 2.0% molybdenum, not more than 2.0% tungsten, the remainder nickel and the usual process-related impurities, wherein the following relations must be satisfied: Cr+Al≧28 (2 | 02-19-2015 |
20150093288 | NICKEL-CHROMIUM ALLOY HAVING GOOD PROCESSABILITY, CREEP RESISTANCE AND CORROSION RESISTANCE - The invention relates to a nickel-chromium alloy comprising (in wt.-%) 29 to 37% chromium, 0.001 to 1.8% aluminum, 0.10 to 7.0% iron, 0.001 to 0.50% silicon, 0.005 to 2.0% manganese, 0.00 to 1.00% titanium and/or 0.00 to 1.10% niobium, 0.0002 to 0.05% each of magnesium and/or calcium, 0.005 to 12% carbon, 0.001 to 0.050% nitrogen, 0.001 to 0.030% phosphorus, 0.0001 to 0.020% oxygen, not more than 0.010% sulfur, not more than 2.0% molybdenum, not more than 2.0% tungsten, the remainder nickel and the usual process-related impurities, wherein the following relations must be satisfied: Cr+Al≧30 (2a) and Fp≦39.9 (3a) with Fp=Cr+0.272*Fe+2.36*Al+2.22*Si+2.48*Ti+0.374*Mo+0.538*W−11.8*C (4a), wherein Cr, Fe, Al, Si, Ti, Mo, W and C is the concentration of the respective elements in % by mass. | 04-02-2015 |
20150305091 | IRON-NICKEL-CHROMIUM-SILICON-ALLOY - Iron-nickel-chromium-silicon alloy having (in % by weight) 34 to 42% nickel, 18 to 26% chromium, 1.0 to 2.5% silicon, and additives of 0.05 to 1% Al, 0.01 to 1% Mn, 0.01 to 0.26% lanthanum, 0.0005 to 0.05% magnesium, 0.01 to 0.14% carbon, 0.01 to 0.14% nitrogen, max. 0.01% sulfur, max. 0.005% B, remainder iron and the usual impurities resulting from the production process. | 10-22-2015 |
20160032425 | NICKEL-BASED ALLOY WITH SILICON, ALUMINUM, AND CHROMIUM - A nickel-based alloy, consisting of (in mass %) 1.5-3.0% Si, 1.5-3.0% Al, and >0.1-3.0% Cr, where Al+Si+Cr is ≧4.0 and ≦8.0 for the contents of Si, Al, and Cr in %; 0.005-0.20% Fe, 0.01-0.20% Y, and <0.001-0.20% of one or more the elements Hf, Zr, La, Ce, Ti, where Y+0.5*Hf+Zr+1.8*Ti 0.6*(La+Ce) is ≧0.02 and ≦0.30 for the contents of Y, Hf, Zr, La, Ce, and Ti in %; 0.001-0.10% C; 0.0005-0.10% N; 0.001-0.20% Mn; 0.0001-0.08% Mg; 0.0001-0.010% O; max. 0.015% S; max. 0.80% Cu; Ni remainder; and the usual production-related impurities. | 02-04-2016 |
20160071632 | METHOD FOR PRODUCING A METAL FILM - A method for producing a metal film from an alloy having more than 50% nickel includes the following steps: (a) the alloy is melted in volumes of more than one ton in a vacuum induction furnace, or open in an induction or arc furnace, followed by treatment in a VOD or VLF system, (b) the alloy is then poured off in blocks, electrodes or as continuous casting to form a pre-product, followed by single or multiple re-melting by VAR and/or ESU (c) the pre-product is then annealed between 800 and 1350° C. for 1-300 hours under air or protection gas, (d) the pre-product is then hot-formed between 1300 and 600° C. to reduce the thickness of the input material by the factor 1.5-200, such that the pre-product has a thickness of 1-100 mm after the forming and is not recrystallized, recovered, and/or (dynamically) recrystallized having a grain size of smaller than 300 μm, (e) the pre-product is then pickled, (f) the pre-product is then cold-formed to produce a film having an end thickness of 10-600 μm, having a deformation ratio of greater than 90%, (g) the film is then cut into strips of 5-300 mm following the cold-forming, (h) the film strips are then annealed under protection gas between 600 and 1200° C. for 1 second to 5 hours in a continuous furnace, (i) wherein the annealed, film-like material is recrystallized after the annealing and has a high proportion of cubic texture. | 03-10-2016 |
Judy Hattendorf, Marina Del Ray, CA US
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20100303747 | SKIN TREATMENT COMPOSITIONS - Arbutin-containing compositions are useful for topical application to provide enhanced luminosity, brightening or lightening to the skin of a user and are at least 85% as efficacious (with regard to skin lightening, when used alone or in a system as measured by Chromameter® b* parameter values) as substantially corresponding compositions containing hydroquinone in an amount from about the same molar amount to about 1.5 times the molar amount of arbutin. | 12-02-2010 |
20160067165 | METHODS FOR LIGHTENING SKIN USING ARBUTIN COMPOSITIONS - Arbutin-containing compositions are useful for topical application to provide enhanced luminosity, brightening or lightening to the skin of a user and are at least 85% as efficacious (with regard to skin lightening, when used alone or in a system as measured by Chromameter® b* parameter values) as substantially corresponding compositions containing hydroquinone in an mount from about the same molar amount to about 1.5 times the molar amount of arbutin. | 03-10-2016 |
Judy Hattendorf, Marina Del Rey, CA US
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20140161746 | TOPICAL COMPOSITIONS AND METHODS OF MANUFACTURING THEM IN SPECIFICALLY TREATED STEEL VESSELS - Stable hydroquinone compositions that are useful for skin care and can have a shelf life of up to three years are prepared in a tank made from a material that does not release metallic ions into the composition. | 06-12-2014 |
20140161751 | STABLE SKIN CARE COMPOSITIONS AND METHODS FOR MANUFACTURING THEM - Stable hydroquinone compositions useful for skin care have a shelf life of up to three years without discoloration. | 06-12-2014 |
Michael Hattendorf, Portland, OR US
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20140339646 | NON-PLANAR TRANSITOR FIN FABRICATION - The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the doping of fins within non-planar transistors, wherein a conformal blocking material layer, such as a dielectric material, may be used to achieve a substantially uniform doping throughout the non-planar transistor fins. | 11-20-2014 |
Michael Hattendorf, Aloha, OR US
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20130264617 | NON-PLANAR TRANSISTORS AND METHODS OF FABRICATION THEREOF - The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar transistors in order to form the source/drain structures from the non-planar transistor fins or to replace the non-planar transistor fins with appropriate materials to form the source/drain structures. | 10-10-2013 |
Michael L. Hattendorf, Portland, OR US
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20140070320 | INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS - Integrated circuits including MOSFETs with selectively recessed gate electrodes. Transistors having recessed gate electrodes with reduced capacitive coupling area to adjacent source and drain contact metallization are provided alongside transistors with gate electrodes that are non-recessed and have greater z-height. In embodiments, analog circuits employ transistors with gate electrodes of a given z-height while logic gates employ transistors with recessed gate electrodes of lesser z-height. In embodiments, subsets of substantially planar gate electrodes are selectively etched back to differentiate a height of the gate electrode based on a given transistor's application within a circuit. | 03-13-2014 |
20150069473 | TRANSISTOR FABRICATION TECHNIQUE INCLUDING SACRIFICIAL PROTECTIVE LAYER FOR SOURCE/DRAIN AT CONTACT LOCATION - Techniques are disclosed for transistor fabrication including a sacrificial protective layer for source/drain (S/D) regions to minimize contact resistance. The sacrificial protective layer may be selectively deposited on S/D regions after such regions have been formed, but prior to the deposition of an insulator layer on the S/D regions. Subsequently, after contact trench etch is performed, an additional etch process may be performed to remove the sacrificial protective layer and expose a clean S/D surface. Thus, the sacrificial protective layer can protect the contact locations of the S/D regions from contamination (e.g., oxidation or nitridation) caused by insulator layer deposition. The sacrificial protective layer can also protect the S/D regions from undesired insulator material remaining on the S/D contact surface, particularly for non-planar transistor structures (e.g., finned or nanowire/nanoribbon transistor structures). | 03-12-2015 |
Michael L. Hattendorf, Beaverton, OR US
Patent application number | Description | Published |
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20090039390 | CMOS TRANSISTOR JUNCTION REGIONS FORMED BY A CVD ETCHING AND DEPOSITION SEQUENCE - This invention adds to the art of replacement source-drain cMOS transistors. Processes may involve etching a recess in the substrate material using one equipment set, then performing deposition in another. Disclosed is a method to perform the etch and subsequent deposition in the same reactor without atmospheric exposure. In-situ etching of the source-drain recess for replacement source-drain applications provides several advantages over state of the art ex-situ etching. Transistor drive current is improved by: (1) Eliminating contamination of the silicon-epilayer interface when the as-etched surface is exposed to atmosphere and (2) Precise control over the shape of the etch recess. Deposition may be done by a variety of techniques including selective and non-selective methods. In the case of blanket deposition, a measure to avoid amorphous deposition in performance critical regions is also presented. | 02-12-2009 |
20090057788 | Angled implantation for removal of thin film layers - Embodiments of the invention provide a device with a reverse-tapered gate electrode and a gate dielectric layer with a length close to that of the gate length. In an embodiment, this may be done by altering portions of a blanket dielectric layer with one or more angled ion implants, then removing the altered portions of the blanket dielectric layer. | 03-05-2009 |
20090087623 | METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen. | 04-02-2009 |
20090152601 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain - Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels. | 06-18-2009 |
20110068403 | STRAINED NMOS TRANSISTOR FEATURING DEEP CARBON DOPED REGIONS AND RAISED DONOR DOPED SOURCE AND DRAIN - Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels. | 03-24-2011 |
20120091542 | METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen. | 04-19-2012 |
Michael L. Hattendorf, Porttand, OR US
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20150079776 | INTEGRATED CIRCUITS WITH SELECTIVE GATE ELECTRODE RECESS - Integrated circuits including MOSFETs with selectively recessed gate electrodes. Transistors having recessed gate electrodes with reduced capacitive coupling area to adjacent source and drain contact metallization are provided alongside transistors with gate electrodes that are non-recessed and have greater z-height. In embodiments, analog circuits employ transistors with gate electrodes of a given z-height while logic gates employ transistors with recessed gate electrodes of lesser z-height. In embodiments, subsets of substantially planar gate electrodes are selectively etched back to differentiate a height of the gate electrode based on a given transistor's application within a circuit. | 03-19-2015 |