Patent application number | Description | Published |
20090239354 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 09-24-2009 |
20090289254 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film. | 11-26-2009 |
20100006854 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region. | 01-14-2010 |
20100068860 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region. | 03-18-2010 |
20100099216 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. | 04-22-2010 |
20100102315 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. | 04-29-2010 |
20100105162 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used. | 04-29-2010 |
20100105163 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used. | 04-29-2010 |
20100187535 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE - To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized. | 07-29-2010 |
20100200855 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 08-12-2010 |
20100283105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer. | 11-11-2010 |
20110031501 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - According to one feature of the present invention, a display device is manufactured according to the steps of forming a semiconductor layer; forming a gate insulating layer over the semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming source and drain electrode layers in contact with the semiconductor layer; forming a first electrode layer electrically connected to the source or drain electrode layer; forming an inorganic insulating layer over part of the first electrode layer, the gate electrode layer, the source electrode layer, and the drain electrode layer; subjecting the inorganic insulating layer and the first electrode layer to plasma treatment; forming an electroluminescent layer over the inorganic insulating layer and the first electrode layer which are subjected to plasma treatment; and forming a second electrode layer over the electroluminescent layer. | 02-10-2011 |
20110068339 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film. | 03-24-2011 |
20110114959 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 05-19-2011 |
20110117698 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. | 05-19-2011 |
20110133177 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 06-09-2011 |
20110147744 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - An object is to increase the on-state current of a thin film transistor. A solution is to provide a projection in a back-channel portion of the thin film transistor. The projection is provided so as to be off a tangent in the back-channel portion between a source or a drain and a channel formation region. With the projection, a portion where electric charge is trapped and a path of the on-state current can be apart from each other, so that the on-state current can be increased. The shape of a side surface of the back-channel portion may be curved, or may be represented as straight lines in a cross section. Further, a method for forming such a shape by performing one etching step is provided. | 06-23-2011 |
20110180796 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which maintains favorable characteristics and achieves miniaturization. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, in which the source electrode and the drain electrode each include a first conductive layer, and a second conductive layer having a region which extends in a channel length direction from an end portion of the first conductive layer. | 07-28-2011 |
20110193080 | Semiconductor device and electronic appliance - One object is to provide a semiconductor device that includes an oxide semiconductor and is reduced in size with favorable characteristics maintained. The semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer; and a gate insulating layer between the oxide semiconductor layer and the gate electrode. The source electrode or the drain electrode includes a first conductive layer and a second conductive layer having a region extended in a channel length direction from an end face of the first conductive layer. The sidewall insulating layer has a length of a bottom surface in the channel length direction smaller than a length in the channel length direction of the extended region of the second conductive layer and is provided over the extended region. | 08-11-2011 |
20110210326 | SEMICONDUCTOR DEVICE - A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, in which the source electrode or the drain electrode comprises a first conductive layer and a second conductive layer having a region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode, in which a sidewall insulating layer is provided over the extended region of the second conductive layer, and in which the sidewall insulating layer comprises a stack of a plurality of different material layers. | 09-01-2011 |
20110250723 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In an embodiment, an insulating film is formed over a flat surface; a mask is formed over the insulating film; a slimming process is performed on the mask; an etching process is performed on the insulating film using the mask; a conductive film covering the insulating film is formed; a polishing process is performed on the conductive film and the insulating film, so that the conductive film and the insulating film have equal thicknesses; the conductive film is etched, so that a source electrode and a drain electrode which are thinner than the conductive film are formed; an oxide semiconductor film is formed in contact with the insulating film, the source electrode, and the drain electrode; a gate insulating film covering the oxide semiconductor film is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating film. | 10-13-2011 |
20110250724 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An embodiment is a manufacturing method of a semiconductor device including the steps of forming a first insulating film; forming a first mask over the first insulating film; performing a slimming process on the first mask to form a second mask; performing an etching process on the first insulating film using the second mask to form a second insulating film; forming a first conductive film covering the second insulating film; performing a polishing process on the first conductive film and the second insulating film to form a third insulating film, a source electrode, and a drain electrode having equal thicknesses; forming an oxide semiconductor film over the third insulating film, the source electrode, and the drain electrode; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode in a region which is over the gate insulating film and overlaps with the third insulating film. | 10-13-2011 |
20110254004 | Semiconductor Device and Manufacturing Method Thereof - A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer. | 10-20-2011 |
20110254089 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME - A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an insulator over side surfaces of the gate electrodes and of the gate wiring. The presence of these substantially triangular side walls make milder the steps at which the second wiring goes over the gate wiring. This suppresses breakage of the second wiring. | 10-20-2011 |
20110272718 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region. | 11-10-2011 |
20110287580 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose characteristic variation is small in the long term. A cation containing one or more elements selected from oxygen and halogen is added to an oxide semiconductor layer, thereby suppressing elimination of oxygen, reducing hydrogen, or suppressing movement of hydrogen. Accordingly, carriers in the oxide semiconductor can be reduced and the number of the carriers can be kept constant in the long term. As a result, the semiconductor device including the normally-off oxide semiconductor element whose characteristic variation is small in the long term can be provided. | 11-24-2011 |
20110287605 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 11-24-2011 |
20120034743 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device in which a defect is suppressed and miniaturization is achieved is provided. An insulating film is formed over a flat surface; a first mask is formed over the insulating film; a second mask is formed by performing a slimming process on the first mask; an insulating layer is formed by performing an etching process on the insulating film using the second mask; an oxide semiconductor layer covering the insulating layer is formed; a conductive film covering the oxide semiconductor layer is formed; a surface of the conductive film is flattened by performing a polishing process on the conductive film; an etching process is performed on the conductive film, so that a conductive layer is formed and a surface of the conductive layer is lower than a surface of an uppermost part of the oxide semiconductor layer; a gate insulating film in contact with the conductive layer and the oxide semiconductor layer is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating layer. | 02-09-2012 |
20120043544 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 02-23-2012 |
20120058631 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer. | 03-08-2012 |
20120061670 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. | 03-15-2012 |
20120129318 | ATMOSPHERIC PRESSURE PLASMA ETCHING APPARATUS AND METHOD FOR MANUFACTURING SOI SUBSTRATE - The atmospheric pressure plasma etching apparatus is provided with a state detecting unit for detecting a state of the object to be processed, and the operation of the atmospheric pressure plasma etching apparatus is controlled in accordance with information detected by the state detecting unit. Thus, in the atmospheric pressure plasma etching apparatus, the object to be processed can be etched while the state of the object to be processed is detected. Accordingly, the object to be processed can be etched favorably. Further, an SOI substrate is manufactured using the atmospheric pressure plasma etching apparatus, whereby both reduction in manufacturing cost of the SOI substrate and suppression of peeling in the SOI substrate can be achieved. | 05-24-2012 |
20120187397 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film. | 07-26-2012 |
20120225520 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a transistor including an oxide semiconductor having favorable electrical characteristics and a manufacturing method thereof. A semiconductor device includes an oxide semiconductor film and an insulating film over a substrate. An end portion of the oxide semiconductor film is in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. The semiconductor device further includes a gate insulating film over and in contact with the oxide semiconductor film, a gate electrode with a sidewall insulating film over the gate insulating film, and a source electrode and a drain electrode in contact with the sidewall insulating film, the oxide semiconductor film, and the insulating film. | 09-06-2012 |
20120235140 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In an embodiment, an insulating film is formed over a flat surface; a mask is formed over the insulating film; a slimming process is performed on the mask; an etching process is performed on the insulating film using the mask; a conductive film covering the insulating film is formed; a polishing process is performed on the conductive film and the insulating film, so that the conductive film and the insulating film have equal thicknesses; the conductive film is etched, so that a source electrode and a drain electrode which are thinner than the conductive film are formed; an oxide semiconductor film is formed in contact with the insulating film, the source electrode, and the drain electrode; a gate insulating film covering the oxide semiconductor film is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating film. | 09-20-2012 |
20120286266 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. | 11-15-2012 |
20120286267 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used. | 11-15-2012 |
20120326143 | Light-Emitting Device and Manufacturing Method of the Light-Emitting Device - A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed. | 12-27-2012 |
20130071739 | NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE - Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided. | 03-21-2013 |
20130137213 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer. | 05-30-2013 |
20130161605 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured. | 06-27-2013 |
20130285050 | SEMICONDUCTOR DEVICE - A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions. | 10-31-2013 |
20140014996 | ELECTROLUMINESCENCE DISPLAY DEVICE - Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. | 01-16-2014 |
20140027762 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a first oxide semiconductor layer over a substrate, a second oxide semiconductor layer over and in contact the first oxide semiconductor layer, a source electrode and a drain electrode over the second oxide semiconductor layer, a gate insulating layer over the second oxide semiconductor layer, and a gate electrode over the gate insulating layer. The first oxide semiconductor layer has a step portion. The step portion is thinner than a portion other than the step portion. A surface of the step portion is in contact with the source electrode and the drain electrode. | 01-30-2014 |
20140027767 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 01-30-2014 |
20140051209 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. | 02-20-2014 |
20140077205 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer. | 03-20-2014 |
20140103337 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device including an oxide semiconductor by suppression of change in its electrical characteristics. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer and a gate insulating layer provided over the oxide semiconductor layer to a region where a channel is formed, whereby oxygen vacancies which might be generated in the channel are filled. Further, extraction of oxygen from the oxide semiconductor layer by a source electrode layer or a drain electrode layer in the vicinity of the channel formed in the oxide semiconductor layer is suppressed, whereby oxygen vacancies which might be generated in a channel are suppressed. | 04-17-2014 |
20140103338 | SEMICONDUCTOR DEVICE - A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for a metal film of a source electrode layer and a drain electrode layer, whereby diffusion of oxygen to the metal film is suppressed. | 04-17-2014 |
20140103339 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section. | 04-17-2014 |
20140103340 | SEMICONDUCTOR DEVICE - A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed. | 04-17-2014 |
20140106502 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced. | 04-17-2014 |
20140106504 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device in which an increase in oxygen vacancies is suppressed. To provide a semiconductor device with favorable electrical characteristics. To provide a highly reliable semiconductor device. In a semiconductor device in which a channel formation region is included in an oxide semiconductor layer, an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer are used to supply oxygen of the gate insulating film, which is introduced by an ion implantation method, to the oxide semiconductor layer. | 04-17-2014 |
20140175435 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed. | 06-26-2014 |
20140179058 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. | 06-26-2014 |
20140183529 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced. | 07-03-2014 |
20140203276 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more. | 07-24-2014 |
20140203309 | ELECTROLUMINESCENCE DISPLAY DEVICE - Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor. | 07-24-2014 |
20140239293 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current. | 08-28-2014 |
20140264391 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. | 09-18-2014 |
20140273343 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by dry etching in which an etching gas is used, and a second etching step is performed by wet etching in which an etchant is used. | 09-18-2014 |
20140306217 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which deterioration of electrical characteristics can be suppressed. The semiconductor device includes a first oxide semiconductor layer over an insulating surface, a second oxide semiconductor layer over the first oxide semiconductor layer, a source electrode layer and a drain electrode layer whose one surfaces are in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, a third oxide semiconductor layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a gate insulating film over the third oxide semiconductor layer, and a gate electrode layer over the gate insulating film. The second oxide semiconductor layer wholly overlaps with the first oxide semiconductor layer. Part of the third oxide semiconductor layer is in contact with the other surfaces of the source electrode layer and the drain electrode layer. | 10-16-2014 |
20140332801 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured. | 11-13-2014 |
20140339538 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. Excess oxygen in the aluminum oxide film is supplied to the oxide semiconductor layer including a channel by heat treatment in a manufacturing process of the semiconductor device. Furthermore, the aluminum oxide film forms a barrier against oxygen and hydrogen. It is thus possible to suppress the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layer including an aluminum oxide film, and the entry of impurities such as hydrogen into the oxide semiconductor layer; as a result, the oxide semiconductor layer can be made highly intrinsic. In addition, gate electrode layers over and under the oxide semiconductor layer control the threshold voltage effectively. | 11-20-2014 |
20140339546 | SEMICONDUCTOR DEVICE - A structure is employed in which a first protective insulating layer; an oxide semiconductor layer over the first protective insulating layer; a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer; a gate insulating layer that is over the source electrode and the drain electrode and overlaps with the oxide semiconductor layer; a gate electrode that overlaps with the oxide semiconductor layer with the gate insulating layer provided therebetween; and a second protective insulating layer that covers the source electrode, the drain electrode, and the gate electrode are included. Furthermore, the first protective insulating layer and the second protective insulating layer each include an aluminum oxide film that includes an oxygen-excess region, and are in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not provided. | 11-20-2014 |
20140339548 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer filling a groove is surrounded by insulating layers including an aluminum oxide film containing excess oxygen. Excess oxygen contained in the aluminum oxide film is supplied to the oxide semiconductor layer, in which a channel is formed, by heat treatment in a manufacturing process of the semiconductor device. Moreover, the aluminum oxide film forms a barrier against oxygen and hydrogen, which inhibits the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layers including an aluminum oxide film and the entry of impurities such as hydrogen in the oxide semiconductor layer. Thus, a highly purified intrinsic oxide semiconductor layer can be obtained. The threshold voltage is controlled effectively by gate electrode layers formed over and under the oxide semiconductor layer. | 11-20-2014 |
20140339560 | SEMICONDUCTOR DEVICE - A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer. | 11-20-2014 |
20140361289 | Semiconductor Device and Method for Manufacturing the Same - Objects are to obtain a minute transistor by reducing the channel length L of a transistor used in a semiconductor integrated circuit such as an LSI, a CPU, or a memory, increase the operation speed of the circuit, and reduce power consumption. Oxide layers having compositions different from the composition of an oxide semiconductor layer including a channel formation region are provided below and over the oxide semiconductor layer, and in the oxide semiconductor layer including the channel formation region, low-resistance regions are provided to interpose the channel formation region therebetween in the lateral direction. The low-resistance regions are formed in a region other than the channel formation region so as to be in contact with a metal film or a metal oxide film by diffusion of a metal element (e.g., aluminum) contained in the metal or metal oxide films into the parts of the oxide semiconductor layer. | 12-11-2014 |
20140361293 | Semiconductor Device - To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film. | 12-11-2014 |
20140367678 | Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same - The semiconductor element includes an oxide semiconductor layer on an insulating surface; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer. The source electrode layer and the drain electrode layer have sidewalls which are in contact with a top surface of the oxide semiconductor layer. | 12-18-2014 |
20150028330 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with each side surface of the first oxide semiconductor film and the second oxide semiconductor film; a first insulating film and a second insulating film over the source electrode and the drain electrode; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode in contact with an upper surface of the gate insulating film and facing an upper surface and the side surface of the second oxide semiconductor film. | 01-29-2015 |
20150037932 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film. | 02-05-2015 |
20150060846 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted. | 03-05-2015 |
20150069385 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for adjusting threshold of a semiconductor device is provided. In a plurality of semiconductor devices each including a semiconductor, a source or drain electrode electrically in contact with the semiconductor, a gate electrode, and a charge trap layer between a gate electrode and the semiconductor, a state where the potential of the gate electrode is set higher than the potential of the source or drain electrode while the semiconductor devices are heated at 150° C. or higher and 300° C. or lower is kept for one second or longer to trap electrons in the charge trap layer, so that the threshold is increased and Icut is reduced. Here, the potential difference between the gate electrode and the source or drain electrode is set so that it is different between the semiconductor devices, and the thresholds of the semiconductor devices are adjusted to be appropriate to each purpose. | 03-12-2015 |
20150069387 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device with adjusted threshold is provided. In a semiconductor device including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is provided, a charge trap layer provided between the first gate electrode and the semiconductor, and a gate insulating layer provided between the second gate electrode and the semiconductor, a threshold is increased by trapping electrons in the charge trap layer by keeping a potential of the first gate electrode at a potential higher than a potential of the source or drain electrode for 1 second or more while heating. After the threshold adjustment process, the first gate electrode is removed or insulated from other circuits. Alternatively, a resistor may be provided between the first gate electrode and other circuits. | 03-12-2015 |
20150079730 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer. | 03-19-2015 |