Hiroaki Kikuchi
Hiroaki Kikuchi, Hokkaido JP
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20110042673 | SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor ( | 02-24-2011 |
20110062419 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited. | 03-17-2011 |
20110291075 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND BIOSENSOR - Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated. | 12-01-2011 |
Hiroaki Kikuchi, Okegawa-Shi JP
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20100236311 | RING ROLLING MILL AND RING ROLLING METHOD - This ring rolling mill includes a main roll and a mandrel provided so as to be capable of being brought close to or separated from each other, and rolling a peripheral portion of a ring-shaped body in a radial direction of the ring-shaped body while the ring-shaped body is rotated along its peripheral direction in a state where the peripheral portion of the ring-shaped body is pinched in the radial direction between an outer peripheral surface of the main roll which is rotationally driven, and an outer peripheral surface of the mandrel which is rotatable. This ring rolling mill further includes a mandrel inclining/supporting mechanism which inclines and supports the mandrel with respect to the axis of rotation of the main roll such that the gap between the outer peripheral surface of the mandrel and the outer peripheral surface of the main roll differs on one side and on the other side as seen in a direction along the axis of rotation of the main roll. | 09-23-2010 |
20130180302 | RING ROLLING MILL AND RING ROLLING METHOD - This ring rolling mill includes a main roll and a mandrel that are brought close to or separated from each other, and roll a peripheral portion of a ring-shaped body in a radial direction of the ring-shaped body while the ring-shaped body is rotated along its peripheral direction in a state where the peripheral portion of the ring-shaped body is pinched in the radial direction between an outer peripheral surface of the main roll, and an outer peripheral surface of the mandrel. This ring rolling mill further includes a mechanism which inclines and supports the mandrel with respect to the rotation axis of the main roll such that the gap between the outer peripheral surface of the mandrel and the outer peripheral surface of the main roll differs on one side and on the other side as seen in a direction along the rotation axis of the main roll. | 07-18-2013 |
20140157851 | METHOD OF MANUFACTURING ANNULAR MOLDING - A method of manufacturing an annular material includes: a forging process of making a discoid forged material by forging an alloy material; and a ring rolling process of making an annular material by performing ring rolling on an annular intermediate made by forming a through-hole in the forged material. In the forging process, hot forging which achieves an absolute value εθ1 of a strain in a circumferential direction of the forged material that is greater than or equal to 0.3, an absolute value εh of a strain in a height direction of the forged material that is greater than or equal to 0.3, and a ratio εh/εθ1 between the absolute values of the strains that is in a range of 0.4 to 2.5 is performed at least two or more times. | 06-12-2014 |
Hiroaki Kikuchi, Chitose-Shi JP
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20110212562 | METHOD OF PRODUCING A BIOSENSOR - A method for manufacturing a biosensor includes forming a laminate of a first silicon oxide film and a polysilicon film on one surface of a silicon substrate; forming a second silicon oxide film on the other surface of the silicon substrate; forming a source electrode, a drain electrode, and a channel on the first silicon oxide film, the channel connecting the source electrode and the drain electrode; and removing the polysilicon film. | 09-01-2011 |
Hiroaki Kikuchi, Tokyo JP
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20110244638 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film. | 10-06-2011 |
20110248698 | BIOSENSOR AND DETECTION METHOD OF TARGET SUBSTANCE - A biosensor includes at least two field effect transistor devices, each including a silicon substrate, a silicon oxide film formed on a surface of the silicon substrate, a source electrode disposed on the silicon oxide film, a drain electrode disposed on the silicon oxide film, a channel for connecting the source electrode and the drain electrode, and a gate electrode capable of controlling the channel, wherein one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is to be immobilized, and the other one of the at least two field effect transistor devices is provided with a reaction field on which a target recognition molecule is not to be immobilized. | 10-13-2011 |
20130028789 | BIOSENSOR KIT - Disclosed are: a biosensor kit in which a bionsensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted. | 01-31-2013 |
20140017146 | BIOSENSOR KIT - Disclosed are: a biosensor kit in which a biosensor utilizing a field effect transistor is not deteriorated during storage or transport; and a system for detecting a substance of interest, which is equipped with the biosensor chip. The biosensor kit comprises a biosensor chip which can measure a substance of interest quantitatively and a package which can hermetically seal the biosensor chip and is composed of a packaging material comprising a metal film. The biosensor chip can measure the substance quantitatively based on the value of a current generated in a field effect transistor when the substance is reacted with a molecule that can recognize the substance and is immobilized on a reaction field connected to the field effect transistor. The biosensor chip comprises the field effect transistor and a mounting substrate on which the field effect transistor is mounted. | 01-16-2014 |
Hiroaki Kikuchi, Kanagawa-Ken JP
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20140120788 | Flat Cable Connector - A flat cable connector is provides that includes a housing, a contact, and a cover member. The housing includes a top surface, a side surface adjacent the top surface, and a lock section disposed along the side surface. The contact is received in the housing and includes a portion protruding from the top surface. The cover member includes a planar surface and a lock extending from the planar surface and engageable with the lock section. | 05-01-2014 |
Hiroaki Kikuchi, Yokohama JP
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20130218555 | DEVICE FOR ANALYZING TEXT DOCUMENTS - An analysis device for analyzing a text document is provided. The analysis device includes a context storage unit configured to store context information that shows a position of a character set of a predetermined context in the text document. The analysis device also includes an index storage unit configured to store index information that shows a position of a word in the text document, for each word of a plurality of words contained in the text document. An input unit is configured to input a target word. A position detection unit is configured to detect from the index information a position of the target word contained in the text document. A frequency detection unit is configured to detect an appearance frequency of the target word per each type of context in the text document based on the position of the target word and on the context information. | 08-22-2013 |